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Process Variation of FINFET and MOSFET

Govarthanan V, Vashista V

School of Electronics Engineering, VIT university, Vellore, India

riation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs, 2011.

te Sizing: FinFETs vs 32nm Bulk MOSFETsBrian Swahn and Soha Hassoun

University Medford.

cess-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices,Yiming Li, ,Chih-Hong Hwang, Hui-Wen CFET: A nanometer MOSFET structure, David John

erences

The impact of systematic variations of transistors

was investigated for the FINFET and MOSFET.

Comparison between the single gate devices tomulti gate devices.

We investigate in this paper varying the oxide

thickness, Doping concentration and threshold

voltage of the MOSFET as well as FINFET using

Silvaco TCAD.

Abstract

Introduction

Silvaco TCAD simulations of the MOSFET is

achieved by using the oxide thickness 0.02 and

the p-well doping concentration is 8e12 and the p-

well implanted using the boron material.

The drain to source voltage always set to be zero

because of the gate bias.

For the planar MOSFET design, silicon stripe

width WSTRIPE= Physical gate length and silicon

oxide thickness 0.02. Stripe width is set to be

0.6*LG is used to suppress the short channel

effects and fin height HSTRIPE is used to achieve

the effective channel as the same.

The Discrete vs. continuous transistor sizing have

been investigated and this optimization techniques

ate faster.

Modeling Parameter

Comparison of FINFET and MOSFET is

achieved by using the variation of the gate oxide

thickness, gate length and doping concentration.

As compared with the Metal Oxide Semiconductor

Field Effect Transistor and FINFET of the

performance is varied by using the Gate oxide

Thickness, Doping Concentration and Threshold

voltage.

So the time of process variation the multi gate

devices give higher performance than single gate

devices.

Conclusion

FinFET devices are used to replace the traditional

MOSFETs because of superior ability to control

the leakage

Minimizes the short channel effects while

delivering the drive current. The transistor

performance can be varied using two categories,

i.e,. Systematic and Random variations.Systematic variation sources are include process

induced variations in oxide thickness and Doping

Concentration.

Transistor scaling to its ultimate limit, the

MOSFET and FINFET structures had been

investigated. I

In this paper the variations of transistor

performance is investigated for each structures

and finally concludes which one is most scalable

devices.

Silvaco TCAD simulations of the MOSFET is

achieved by using the oxide thickness 0.02 and

the p-well doping concentration is 8e12 and the p-

well implanted using the boron material. The

drain to source voltage always set to be zero

because of the gate bias.

MOSFET AND FINFET Structure

Figure 2.3MOSFET Structure

Objective

Investigate issues in FINFET independent gate

biasing as well as sizing of the transistor

The effects of systematic variations

LG,WSTRIPE and tox are discussed.

The multi gate devices threshold voltage is

dependent on the stripe width it is used to supress

the short channel effects.

Threshold voltage increases when increasing the

oxide thickness

RESULTS AND DISCUSSION

Figure 2.1FINFET Structure

The finFET device is mainly depends on the

temperature and the gate voltage because

this device is multi gate device.

This multi gate device give high performancecompared to other single gate MOSFETs. The

drain current improves gradually

Figure 2.2FINFET Gate voltage vs Drain current

The gate length reduces at that time theperformance increases and also sensitivity.

http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.cse.iitd.ernet.in/~vls03016/website/courses/micro/finfet_vls03016.doc.pdfhttp://www.cse.iitd.ernet.in/~vls03016/website/courses/micro/finfet_vls03016.doc.pdfhttp://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214http://www.sciencedirect.com/science/article/pii/S0167931708001214