New Patents

temperature of the semiconductor substrate (I 0). and simultaneously, supplying the same gas from a second gas supply means (4b) into the vacuum chamber (1) in the same amount as the decrease of gas from the first gas supply means so that the temperature of the semiconductor subs- trate is maintained at a constant value and the in- ner pressure of the vacuum chamber (1) is also maintained at a constant value.

4810471

VACUUM MANIFOLD FOR EXTRACTION PROCESSING

George D Wachob. Robert W Rightnour as- signed to Rohm and Haas Co

A vacuum manifold for solid phase extraction of a plurality of liquid samples from reagent tubes removably connected by valves to a vacuum chamber through a removable vacuum tight cover closing. A plurality of parallel flow paths are provided through the cover for the flow of li- quid samples into the vacuum chamber, through a plurality of valves rotatable about an axis para- llel to the general direction of flow through the cover to provide flow adjustment and closing of the valves. A valve is also provided for attaching the vacuum chamber to a vacuum source to create a vacuum therein. An optional attach- ment is provided permitting treatment of materials with nitrogen or other gases using a manifold plate attached to a source of gas and providing a plurality of valve control means axially aligned to couple with the rotatable val- ves for passage of liquid into the vacuum cham- ber.

4810531

VAPOR DEPOSITION OF TIN

Peter J Heyes, Wantage, United Kingdom as- signed to Metal Box plc

In the vapor deposition of tin on to a surface such as a polymeric film (3) to be used for pack- aging, a dispersion of titanium hydride (17) in a dispersant is applied to the interior surface of an evaporation boat (9) and the dispersant is evaporated before the boat is used to vaporize tin metal under vacuum for the purpose of meta- llizing the surface.

4811583

FEED-THROUGH ELEMENTS THEREFOR

Hug Lievens, Wilfried Coppens. Gent. Belgium assigned to N V Bekaert S A

The invention relates to a feed-through element for application in a vacuum apparatus for the continuous feeding through of material with wire character to be treated at least comprising a tubular casing with an inside diameter that is lar- ger than the outside diameter of the material to be fed through, whereby the free surface which is left between the material to be fed through and the inner side of the tubular casing (21) does not exceed 30”,, of the total surface availabe inside the tubular casing (21), and whereby the value of the quotient of L/S-free being more than or equal to 500 mm-l. where L represents the length of the tubular casing (21) in mm and S-free the free sur- face in mm2.

4812213

PROCESS FOR THE MANUFACTURE OF MULTI-

LAYER CIRCUITS WITH DYNAMIC FLEXING REGIONS AND THE FLEXIBLE CIRCUITS

MADE THEREFROM

Carlos L Barton, Adrienne Lindsay, Samuel W Henson assigned to Rogers Corporation

A multilayer through-hole contacted flexible cir- cuit and method of manufacture thereof is pre- sented having a laminar construction which is strictly symmetrical in the bending area; and which has no exposed adhesive. The flexible cir- cuit is made by providing through-holes to a standard single sided laminate. Next, conductive material is vacuum deposited (e.g. sputtered or evaporated) into the through-holes and at the same time a conductive seed-layer is deposited on the polymer side of the standard laminate. Plating resist is applied to both sides of the material and the seed-layer side of the material is patterned such that circuit traces, pads, and through-holes can be electroplated with addi- tional copper. The plating resist is stripped and the very thin layer of copper in the non- conductive areas is flash etched to produce semi- additive circuit features on the seed-layer side. Etch resist is then applied to both sides of the material and circuit patterns fabricated on the