Optical Power

[W]

10

2

0.2

0.1

Beam Quality

20

Product Families

Portfolio Regional Share

Company Development

45%

19%

19%

13% 4%

Germany EMEA NAFTA APAC Japan

cagr. 24%

Volume [pcs/a]

t

10

100

1.000

100.000

Consumer Markets

10.000

Research Facilities

•

•

•

•

•

•

eyP facility

Laser diode material (active region / substrate)

Typical emission wavelength

InGaN / GaN, SiC 380 - 470 nm

AlGaInP / GaAs 630 - 670 nm

AlGaAs / GaAs 720 – 850 nm

InGaAs / GaAs 900–1100 nm

InGaAsP / InP 1000–1650 nm

Optical Power [W]

10

2

0.2

0.1

Beam Quality

20

NORDIC

Hanamura

SLEO Photonics

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

•

30%

9% 5% 6%

15%

4%

31%

Scientific

Instrument. & Sensors

Material Processing

Medical

Space and Defence

Communic. & Opt.Storage

Distribution

45%

19%

19%

13%

4%

Germany

EMEA

NAFTA

APAC

Japan

•

•

• λ

•

•

•

•

•

•

•

Laser

DOE

•

•

•

• λ

•

•

• 1 to 50 ns pulse width

• up to 1 W peak power

• up to 1 MHz repetition rate

• SMSR > 35 dB

• Single Mode PM Fiber

1062 1063 1064 1065 1066 1067

-80

-70

-60

-50

-40

-30

-20

-10 15°C

20°C

25°C

30°C

35°C

40°C

45°C

Inte

ns

ity

[d

B]

Wavelength [nm]

GC-01199, 1 AEYP-DFB-1064-00500-1500-BFY02-0010

•

•

•

•

•

• λ

•

•

•

•

•

•

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•

•

TO packages

•

• λ

•

•

Tapered Amplifier Seed Laser

Collimating Lens

AR Coating

Focussing Lens

•

• λ

•

•

Grating

Tuning Mirror

RWE Laser

Collimating Lens

AR Coating

Output