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www.fairchildsemi.com 1 Power Solutions for Automotive Applications Fairchild Automotive Team 2008 April

Power Solutions for Automotive Applications Solutions for Automotive Applications Fairchild Automotive Team 2008 April 2 Automotive Product Portfolio Fairchild offers a broad array

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www.fairchildsemi.com

1

Power Solutions for Automotive Applications

Fairchild Automotive Team2008 April

2

Automotive Product Portfolio

Fairchild offers a broad array of automotive solutions and services for optimizing system power.

Power MOSFETs

Smart MOSFETs*

IGBTs

Ignition IGBTs

Smart Ignition IGBTs*

Rectifiers

Motor Driver

HV IC

Automotive Power Modules

* New Product Focus

3

Powertrain

−Transmission−Ignition−Injection−Throttle Control−Cruise Control−Alternator

“Under the Hood” WW Market for Power Semiconductors in Automotive Applications

Chassis

−Antilock Brakes−Steering

Suspension

Safety and Security

−Airbags−Tire Pressure

Monitors−Keyless Entry

Body

−Lighting−HVAC−Seats−Windows−Doors−Wipers−Sunroofs

Under DevelopmentDiscrete Product Family:• Trench MOSFETs 30V to 150V• Planar MOSFETs 55V to 600V• Ignition IGBTs• Smart switch products• New packages – PQFN

Smart SwitchHVIC

Ignition IGBTsMV MOSFETs

LV MOSFETsMV MOSFETs

Smart SwitchMotor DriverMV MOSFETs

LV MOSFETsMV MOSFETs

Source IMS 2006

4

To become the “AUTOMOTIVE” POWER FRANCHISE

STRATEGIC IMPERATIVES• Provide world-class new products to our key automotive customers

Smart Power (High Side Switches, HV gate drivers, Ignition)Advanced Packaging (PQFN, Smart Power Module)

• Growth in target automotive applications in all regions• Deliver high standards of quality and continually reduce

manufacturing costs • Superior technical and customer service• Global presence/local leadership:

‒ Local design-in and demand creation ‒ Global fulfillment through OEM ODM EMS Distribution

Automotive Vision

5

StdMOSFETs

Ignition IGBTs

Temp Sense

MOSFET

Advanced Smart Functions

Engine control

Body & Engine control

Body and advanced

engine control

New applications & options, i.e. Junction Box

Application Functionality

Clamps

Temp & Current

sense

System Feedback

System interface

& drive

Feat

ures

Production ReleasedWe are going here

In development today

Analog functionsGate Drivers

Motor Drivers

SPM Modules for EPS

Automotive Power Products Direction

Smart Ignition IGBT

DISD

2007

Current Sensing

IGBT

2008

High Side switches

SPM Modules for HEV & Higher Power Applications

2009~10

Current Sense

MOSFET

Ignition IGBTs

6

Fairchild Functional Power

Functional Power Functional Power ProductsProducts

- High Side Switch- Dual Solenoid Driver- Smart Ignition IGBT

Discrete Tech.Discrete Tech.-- IGBTIGBT

--Ignition Ignition inclincl current sensingcurrent sensing--DiscreteDiscrete--HIDHID

-- Protected Protected MOSFETsMOSFETs-- Power Trench MOSFETPower Trench MOSFET

--2020--40V N channel40V N channel--60V N channel60V N channel--4040--100V P channel100V P channel

--DiodeDiode

Analog Tech. Analog Tech. -- CD/BCD MOS Process CD/BCD MOS Process

--650V CDMOS650V CDMOS--60V CDMOS60V CDMOS--80V BCDMOS80V BCDMOS

Fairchild’s Functional Power Products are the combination of leading edgeAnalog and Discrete technologies

8

Functional Power Benefits

Fairchild Benefit

Fairchild’s smart power switch technology allows the use on the lowest power loss (heat generating) devices that the footprint (board space) will allow.

Fairchild’s smart power switch technology enables faster development of new products optimized for a customer application.

Fairchild’s smart power switch technology allows for more accurate measurement of low voltage drops and currents.

Challenge

Heat removal in a small space is key issue in design of electronic modules for harsh automotive environment

Flexibility Most automotive designs are customized yet automotive system designers are under constant pressure to reduce design cycle time.

Performance Reduction of noise and accurate sensing of load conditions are important considerations in automotive module design.

Why Fairchild integrates the sense elements with power discrete products(Control IC or Resistors + Power Trench MOSFET, EcoSpark, or IGBT)

9

Functional Power Products Focus

High Side Switch

HV IC

Smart Ignition IGBT

Motor Driver

Solenoid Driver

10

FDDS10H04, 10 mOhm, 40VUltra Trench FET, TO252-5L

FDBS02H04, 2.4 mOhm, 40VPT FET 4th, TO263-7L

FDBS09H04, 9 mOhm, 40VUltra Trench FET, TO220/TO263-7L

2008 20092007

FDDS100H06, 100mOhm, 60VSAP5A, Single Chip, TO252-5L

Plan

High Side Switch Roadmap

2010

Single chip series, 20, 40, 60, 80mOhm, 60VSAP5A, TO252-5L

Multi channel Single chip series2/4 channel 40/60/80mOhm, 60V

SAP5A, 20PQFN

Chip on Chip Series 4, 6 mOhm, 40VPT FET 4th, TO252-5L

Released

11

High Side Switch Product list

High Side Switches

PartNumber

VBB

(V)OutputClamp

(V)

RDS(ON)(mOhm)

Io (A) Po (W) Package Protection FinalSample

FDPS09H04 5.5 ~ 38 42 9.0 48 81 TO220-7L SCP, OLP, TSD, UVLO, OVP, Reverse Battery, Current Limit, Load DumpLoss of GND protection

AvailableNow

FDBS09H04 5.5 ~ 38 42 9.0 48 81 TO263-7L SCP, OLP, TSD, UVLO, OVP, Reverse Battery, Current Limit, Load DumpLoss of GND protection

AvailableNow

FDDS10H04 5.5 ~ 38 42 10.0 42 59 TO252-5L SCP, OLP, TSD, UVLO, OVP, Reverse Battery, Current Limit, Load DumpLoss of GND protection

AvailableNow

FDBS02H04* 5.5 ~ 34 40 2.4 110 81 TO263-7L SCP, OLP, TSD, UVLO, OVP, Reverse Battery, Current Limit, Load DumpLoss of GND protection

FDDS100H06* 5.0 ~ 34 57 100 2.8 59 TO252-5L SCP, OLP, TSD, UVLO, OVP, Open load detectionLoad dump, Current Limit

2Q 2008

* : Under development

12

FDB(P)S09H04, 9mOhm Smart MOSFET

Features• Short circuit protection with latch• Current limitation• Over load protection• Thermal shutdown with restart.• Over voltage protection (including load dump)• Loss of ground / Supply protection• Very low standby current• Fast demagnetization of inductive loads• Diagnostic function – overload operation, over

temperature shutdown and short circuit shutdown

Application• Seat Control• Light Control (High / Low beam)

Product Package Operating Temp.FDBS09H04TF TO263-7L - 40 ~ 125

FDBS09H04TU TO-220-7L - 40 ~ 125

Package

Parameter Symbol Value Unit

Supply Voltage VBB 38 V

Supply Voltage for full SCP VBB 30 V

Load Dump Protection VLD 45 V

Operating Temp. Tj -

40 ~ 150

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

13

FDDS10H04, 10mOhm Smart MOSFET

Features• Short circuit protection with latch• Current limitation• Over load protection• Thermal shutdown with restart.• Over voltage protection (including load dump)• Loss of ground / Supply protection• Very low standby current• Fast demagnetization of inductive loads• Diagnostic function – overload operation, over

temperature shutdown and short circuit shutdown

Application• Seat Control• Light Control (High / Low beam)

Product Package Operating Temp.FDDS10H04TF TO252-5L - 40 ~ 125

Package

Parameter Symbol Value Unit

Supply Voltage VBB 38 V

Supply Voltage for full SCP VBB 30 V

Load Dump Protection VLD 45 V

Operating Temp. Tj -

40 ~ 150

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

14

FDBS02H04, 2.4mOhm Smart MOSFET

Features• Short circuit protection with latch• Current limitation• Over load protection• Thermal shutdown with restart.• Over voltage protection (including load dump)• Loss of ground / Supply protection• Very low standby current• Fast demagnetization of inductive loads• Diagnostic function – overload operation, over

temperature shutdown and short circuit shutdown

Application• Seat Control• Light Control (High / Low beam)

Product Package Operating Temp.FDBS02H04TF TO263-7L - 40 ~ 125

Package

Parameter Symbol Value Unit

Supply Voltage VBB 38 V

Supply Voltage for full SCP VBB 30 V

Load Dump Protection VLD 45 V

Operating Temp. Tj -

40 ~ 150

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

15

FDDS100H06, 100mOhm Smart MOSFET

Features• Short circuit protection with latch• Current limitation• Over load protection• Thermal shutdown with restart.• Over voltage protection (including load dump)• Loss of ground / Supply protection• Very low standby current• Fast demagnetization of inductive loads• Diagnostic function – overload operation, over

temperature shutdown and short circuit shutdown

Application• Seat Control• Light Control (High / Low beam)

Package

Parameter Symbol Value Unit

Supply Voltage VBB 38 V

Supply Voltage for full SCP VBB 30 V

Load Dump Protection VLD 45 V

Operating Temp. Tj -

40 ~ 150

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

Product Package Operating Temp.FDDS100H06 TO252-5L - 40 ~ 125

16

FAN7093 P-N Channel Half Bridge Motor

Driver for Door Module (Power Window)SAP6, TO263-7L

2007 2008 2009

FAN7092 3Phase BLDC Motor Drive IC

For Power SteeringSAP6, MLP

2010

FAN7091A 6Channel DC Motor Driver for

HVACSAP6, 28SSOP

FAN709Y 5Ch Motor + 4 High side Driver

for Door Module (Rock, Mirror, Lamps)

SAP6, 56TSSOP

FAN709X Dual Half Bridge Drive ICfor Injector/Valve Driver

SAP6, 20PQFN

Motor Drive IC Roadmap

PlanDeveloping

FAN7091 6Channel DC Motor Driver for

HVACBD350, 28SSOP

17

Motor Driver Product list

PartNumber

Application Criteria VBB

(V)Io (A) Po (W) Package Sample

FAN7091 HVAC SystemSmall DC Motor

6Ch DC

Motor Driver 40 1.5A@ Vds=12V

2.5 28SSOPH AvailableE/S

FAN7092 EPS, FAN, HEV andRear wheel driver

3Phase BLDC Motor driver

FAN7093 Door Module P-N Half bridge MotorDriver

45 40 81 TO263-7L 1QCY09

* : Under development* : Planning

18

FAN7091, 3Ch. Full Bridge Motor Drive IC

Features• Driver for up to 3 motors and 2 high side switch• Delivers up to 0.8 A continuous• Very low current consumption in stand-by (Inhibit)• Low Rds(on) ; 1.5 ohm per bridge @ 25 °C, 0.4 A• 3 Error flag diagnosis output• OVP,UVLO,OTP with hysteresis and diagnosis• Output protected against short circuit• 4 Independent power supply input• Internal clamp diodes• Enhanced power 28SSOPH Package

Application• HVAC system• Small DC motor

Product Package Operating Temp.FAN7091G3 SSOPH-28 - 40 ~ 125

FAN7091G3X SSOPH-28 - 40 ~ 125

Package

Parameter Symbol Value Unit

Supply Voltage output VBB 40 V

Supply Voltage for signal Vcc -0.3~5.5 V

Output Current Iout 1.5 A

Power Dissipation Pd 2.5 W

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

X : Tape & Reel type

19

FAN7092, 3Phase BLDC Motor Drive IC

Features• 3 high and low side driver• Stable gate-source voltage with smart regulator• TTL comparable inputs• PWM frequency up to 30KHz• Peak output current : 1A• Adjustable short circuit level and current limiting• Adjustable di/dt limitation• Adjustable dead time with shoot through protection• Available short brake function• Short circuit protection for each MOSFET• Reverse battery protection• Under voltage pre-warning and lock out• Optional synchronous freewheeling• SCP, TSD, UVP, OVP

Application• EPS, Rear wheel driver, FAN and HEV system

Parameter Symbol Value Unit

Supply Voltage output Vvs 60 V

Output Current Iout 1 A

Power Dissipation Pd TBD W

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

Product Package Operating Temp.FAN7092 # MLP - 40 ~ 125

Package : MLP (TBD Pin #)

CH

HSDriver 1

REG1

REG2

LSDriver 2

UVLO

OVPSCPUVP

Input control logic Anti shoot through

Charge Pump Control BL[3..1]SL[3..1]

BH[3..1]SH[3..1]

SCDDL[3..1]SL[3..1]

DH[3..1]SH[3..1]

TSD

Diagnosis

DI/dt limitation

SCPUVPTSDOVP

RBP

OVD

HSDriver 2

LSDriver 2

HSDriver 3

LSDriver 3

Dead time

Brake Selection

CL

VS

GND[3..1]

OV

EF

BR

IH[3..1]

IL[3..1]

EN

DT

DI

SVGSCL SL3

GL3BL3

SH3GH3BH3

SL2GL2BL2

SH2GH2BH2

SH1

GH1

BH1

SL1

GL1

BL1

IS

MODEsM1

M2

DH[3..1]

Smart Regulators

20

FAN7093, P-N Half Bridge Motor Drive IC

Features• Short circuit protection with latch• Path resistance of typ. 16mW @25×C• Low quiescent current of typ.7uA @25×C• PWM capability of up to 25kHz combined with active

freewheeling• Switched mode current limitation for reduced power

dissipation in over current• Current limitation, TSD, OVP, UVLO• Status flag diagnosis with current sense capability• Adjustable slew rates for optimized EMI

Application• Door Module (Power Window)

Parameter Symbol Value Unit

Supply Voltage output Vvs 45 V

Supply Voltage for Logic Vin -0.3~5.3 V

Output Current Iout -40~40 A

Power Dissipation Pd 81 W

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

Product Package Operating Temp.FAN7093TF TO263-7L - 40 ~ 125

Package

21

Solenoid Driver Product list

PartNumber

Application Criteria VBB

(V)Io (A)

ReversePo (W)Heat Sink

Package Sample

FDMS2380 TransmissionAny Inductive Loads

Dual Integrated Solenoid Driver

60 -10 7.0 PowerQFN

Available

22

FDMS2380, Dual Integrated Solenoid Driver

Features• 10A, 60V load clamp• RDS(ON) = 30mΩ

(Typ.) Excitation path• 6V to 26V operation• Soft short detection• CMOS Compatible• Thermal Shutdown• Diagnostic Output• Integrated Clamps• Over Current Protection• Open Load Detection• Over Voltage Protection

Application• Transmission/Inductive Loads

Package

Parameter Symbol Value Unit

Max. DC Supply Voltage VBAT 60 V

Input Voltage VIN 10 V

Reverse Output Current IIN -10 A

Operating Temp. Tj -

40 ~ 160

Storage Temp. Tstg -

40 ~ 160

Absolute Maximum Ratings

Block Diagram

Product Package Reel Size Tape Width QuantityFDMS2380 Power PQN 330mm 24mm 750

23

FAN7081(Active Low Input)

HDG4, 8SOP

FAN7083(Built in Shut down)

HDG4, 8SOP

FAN7080(Dead Time Control)

HDG4, 8SOP

FAN7085(Recharge function)

HDG4, 8SOP

2007 2008 2009 2010

FAN708Y Full Bridge Gate Driver

HDG4D, 20WSOP

FAN708A3Phase Gate driverHDG4D, 20WSOP

FAN708Z seriesLow Side Gate Driver for

Diesel Injector HDG4D, 8/20WSOP

HV Gate Driver Roadmap

FAN708X High Current Half Bridge Gate

Driver(Can be implemented to Full & 3Phase driver) HDG4D, 8SOP

Plan

Released

24

Better noise immunity. (Owing to noise canceling circuit over high dv/dt common-mode noise)

• Extended allowable negative voltage: -9.8V at VBIAS = 15V• Low power consumption.

(Owing to low quiescent current issues:Iqbs/qcc is lower than other competitors)

• UVLO function for both channels.• Matched propagation delay below 50nsec.• Floating channel designed

for bootstrap operation to +600V.• TTL compatible input logic threshold levels.

Fairchild HVIC Advantages

•• Better Noise immunity !!!

Better Noise immunity !!!

•• Allowable Negative Voltage

Allowable Negative Voltage

Swing !!!

Swing !!!

•• Low Power Consumption !!!

Low Power Consumption !!!

(due to low Quiescent current Issues)

25

HV IC Summary 1

FAN7081 FAN7083 FAN7085 FAN7080Type High side High side High side Half Bridge

HIN Input Out phase In phase Out phase In phase

Reset input - inverted inverted inverted

Logic Compatibility(HIN) 9.5 / 6V 9. 5 / 6V 3 / 1.4V 2.7 / 0.8V

Logic Compatibility(SD/Reset) - 3 / 1.4V 3 / 1.4V - / 1.0V(0.6V)

Internal Ref for HIN/RESET 0.5VCC / - 0.5VCC/ 0.5*5V 0.5VCC/0.5VCC 0.5*5V/ 0.5*5V

Max Input Range @ HIN,SD VCC VCC VCC VCC

Supply Voltage [V] 10 ~ 20 10 ~ 20 4.4 ~ 20 6 ~ 20Min. Pulsed Output Source Current[mA] 250 200 200 250

Min. Pulsed Output Sink Current [mA] 500 400 200 500

Recharge FET X X O X

VCC Quiescent current [uA] 40/120 65/120 -/400 500/1000

VBS Quiescent current [uA] 40/120 40/100 -/200 60/150

Operating Temp[°C] -40 ~125 -40 ~125 -40 ~125 -40 ~125

Package SOIC-8 SOIC-8 SOIC-8 SOIC-8

Power dissipation[W]

Competitor IR2118 - IR20153 IR2184

26

FAN7081 FAN7083 FAN7085 FAN7080Offset Voltage 600 600 300 600

VCC UVLO + threshold[v], typ/Max 8.9/9.8 8.9/9.8 -/4.5 4.5/5.5

VCC UVLO - threshold[v], Min/typ 7.4/8.2 7.4/8.2 2.5/- 2.8/3.8

VCC UVLO Hysteresis 0.5 0.5 0.4 0.7

VBS UVLO + threshold[v], typ/Max 8.9/9.8 8.9/9.8 -/4.5 4.5/5.5

VBS UVLO – threshold[V],Min/typ 7.4/8.2 7.4/8.2 2.5/- 2.8/3.8

VBS UVLO Hysteresis 0.5 8.9/9.8 0.4 0.7

Turn-on Propagation delay, Ton[ns] 120/200 115/200 500/800 700/-

Turn-off Propagation delay, Toff(ns] 120/200 90/200 200/400 200/-

Shutdown Delay, Tsdoff [ns] - 115/200 200/400 200/-

Shutdown Delay, Tsdon [ns] - 90/200 500/800 -

Turn-On Rise Time, Tr [ns] 65/200 65/200 ? 200/-

Turn-Off fall Time, Tf [ns] 25/100 25/200 ? 100/-

Dead Time, DT [ns] - - 7000/9800 500/-

Dead Time Matching, MDT [ns] - - - -/80

Delay Matching, MT [ns] - - - -/80

HV IC Summary 2

27

FAN7081, High Side Gate Driver

Features• 600V high side gate driver• Floating channel designed for bootstrap operation• Allowable negative transient is –15V @Vcc=15V, 100ns• High dV/dt immunity.[50V/ns]• Gate drive supply range from 9.5V to 20V• Under-voltage lockout• CMOS Schmitt-triggered inputs with pull-up• High side output out of phase with input• 115 / 90ns turn-on/ turn-off time• 250mA / 500mA source / sink current• Operating temp: -40 °C ~ 125 °C

Application• Piezo Valve Type Common-Rail Diesel Injector (CRDI)

Product Package Operating Temp.FAN7081M SOIC-8 - 40 ~ 125

FAN7081MX SOIC-8 - 40 ~ 125

Package

Parameter Symbol Value Unit

High Side Floating supply Offset voltage

VB 625 V

Supply Voltage VCC 25 V

Power Dissipation Pd 0.625 W

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

28

FAN7083, High Side Gate Driver

Features• 600V high side gate driver• Floating channel designed for bootstrap operation• Allowable negative transient is –15V @Vcc=15V, 100ns• High dV/dt immunity.• Gate drive supply range from 9.5V to 20V• Under-voltage lockout• CMOS Schmitt-triggered inputs with pull-down• High side output in phase with input • RESET input is 3.3V and 5V logic compatible• 200 / 200ns turn-on/ turn-off time• 200mA / 400mA source / sink current• Operating temp: -40 °C ~ 125 °C Application

Application• Piezo Valve Type Common-Rail Diesel Injector (CRDI)

Product Package Operating Temp.FAN7083M SOIC-8 - 40 ~ 125

FAN7083MX SOIC-8 - 40 ~ 125

Package

Parameter Symbol Value Unit

High Side Floating supply Offset voltage

VB 625 V

Supply Voltage VCC 25 V

Power Dissipation Pd 0.625 W

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

PULSE GEN

UVDETECT

UVDETECT

PULSEFILTER

R

R

S

QHV Level Shift

IN

RESET

VB

HO

VS

COM

VCC

LOGIC

29

FAN7085, High Side Gate Driver with Recharge

Features• 300V high side gate driver• Floating channel designed for bootstrap operation• Allowable negative transient is –15V @Vcc=15V, 100ns• High dV/dt immunity • Gate drive supply range from 4.5V to 20V• Under-voltage lockout• CMOS Schmitt-triggered inputs with pull-down & up • Output out of phase with input• Reset input• Internal recharge FET for bootstrap refresh• 500/ 200ns turn-on/ turn-off time• 200mA / 200mA source / sink current @VBS 7V• Operating temp: -40 °C ~ 125 °C

Application : Magnetic Valve Type CRDI

Product Package Operating Temp.FAN7085M SOIC-8 - 40 ~ 125

FAN7085MX SOIC-8 - 40 ~ 125

Package

Parameter Symbol Value Unit

High Side Floating supply Offset voltage

VB 625 V

Supply Voltage VCC 25 V

Power Dissipation Pd 0.625 W

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

VCC Under Voltage Reset VCC to GND

Logic PulseFilter

Level ShifterON

Level ShifterOFF

Delay

Under Voltage Reset

VB to VS

Pulse FilterFlip Flop

Brake before make

RESET-

IN-

GND

VS

HO

VB

30

FAN7080, Half Bridge Gate Driver

Features• 600V high side gate driver• Floating channel designed for bootstrap operation• Allowable negative transient is –9.8V @Vcc=15V• High dV/dt immunity.• Gate drive supply range from 6V to 20V• Under-voltage lockout• CMOS Schmitt-triggered inputs with pull-down• High side output in phase with input • 3.3V, 5V, and 15V logic compatible input • Matched propagation delay for both channels• Dead time adjustable(500ns ~ 2.5us)• 700 / 200ns turn-on/ turn-off time• 250mA / 500mA source / sink current• Operating temp: -40 °C ~ 125 °C

Application : Junction Box

Product Package Operating Temp.FAN7080M SOIC-8 - 40 ~ 125

FAN7080MX SOIC-8 - 40 ~ 125

Package

Parameter Symbol Value Unit

High Side Floating supply Offset voltage

VB 625 V

Supply Voltage VCC 25 V

Power Dissipation Pd 0.625 W

Storage Temp. Tstg -

55 ~ 150

Absolute Maximum Ratings

Block Diagram

DEADTIMECONTROL

DELAY

PULSEGENERATOR

PULSEFILTER

UVLOR

R

S

Q

UVLO

VCC

COM

LO

VB

HO

VSIN

SDT500kΩ

500kΩ

31

Fairchild New Power Discretes

Functional Power Functional Power ProductsProducts

- Smart Power Switch- Dual Solenoid Driver- Smart Ignition IGBT

Discrete Tech.Discrete Tech.-- IGBTIGBT

--Ignition Ignition inclincl current sensingcurrent sensing--DiscreteDiscrete--HIDHID

-- Protected Protected MOSFETsMOSFETs-- Power Trench MOSFETPower Trench MOSFET

--2020--40V N channel40V N channel--60V N channel60V N channel--4040--100V P channel100V P channel

--DiodeDiode

Analog Tech. Analog Tech. -- CD/BCD MOS Process CD/BCD MOS Process

--650V CDMOS650V CDMOS--60V CDMOS60V CDMOS--80V BCDMOS80V BCDMOS

Fairchild’s Functional Power Products are the combination of leading edgeAnalog and Discrete technologies

32

Explanation of Sense Elements

Current SenseA defined source/emitter isolated area on the power device called a pilot FET/IGBT. This sense element will yield a proportional sampling of the power device current.

Temperature Sense, three approaches used:–

Polysilicon temperature sense diodes: A known current is passed through the diode and the forward voltage drop of the diode is measured. As device heats up the Vf drops.

MOSFET Vth can be used for temperature sensing. A pilot FET is used with a known gate voltage that will pass a fixed drain current. As the device heats up the Vth drops and the current increases.

Control die also have the ability to sense temperature directly. Power and control die must be in close proximity to one another.

ESD polysilicon zener diodes that protect the gate of the MOSFET.

Clamp diodes Improved SCIS vs. UIS. polysilicon zener diodes and resistors configured between drain/collector, gate, source/emitter such that if VDS /VCE rise above the zener voltage the power device is turned on in the linear mode to dissipate the energy.

33

Ignition Evolution

Distributor

Coil

1975 1980 1990 2000 2004 Future

Ignition Module

Engine Control Module (ECM)

MORE PRECISE ENGINE CONTROL, MORE POWER MANAGEMENT REQUIRED

Coil-On-PlugCoil + Switch On Plug

Distributorless Coil

Coil + Smart Switch On Plug

+ +

1st

Electronic Ignition

Eliminate the distributor

Eliminate high voltage wires & separate ignition module

Moves functionality from the ECM to the coil reducing the size of the ECM & enabling precise control of each cylinder

Saves ECM board space by moving switch from ECM to coil

1st

Electronic Engine Control Module

# IGBT =# Cylinders / 2

# IGBTs =1 / Cylinder

# IGBTs =1 / Cylinder

# IGBTs =1 / Cylinder

1 IGBT1 IGBT

Fairchild is the #1 WW Supplier of Ignition IGBTs250M+ Units Shipped

34

Ignition IGBT Solutions

EcoSparkTM family in production since Oct 2001•

300mJ SCIS energy in D-Pak capability equal to D2-Pak devices•

D-Pak requires only one third of the board space compared to D2-Pak•

Ideal for coil on plug applications•

Variations in clamp voltage and resistor values available•

Smart Switches (co-packaged Ignition IGBT with Control IC) planned•

New thin package (5mm x 6mm PQFN) planned

60%D2PAK 203mm2 DPAK 77mm2

35

Ignition IGBT Solutions

• Current Sensing Ignition IGBT Devices (AEC-Q101 Qualified)

Type Clamping IC @110oC Design VCE(sat) @25oC SCIS PackageVoltage Ratio Max Conditions Energy

FGB3040CS 400V 19A 200:1 1.6V 6A, 4V 300mJ TO263-6

COLLECTOR

EMITTERSENSE

GATE

EMITTERKELVIN

• Ignition IGBT Devices (AEC-Q101 Qualified)

Type Clamping IC @110oC VCE(sat) @25oC SCIS Package Voltage Max Conditions Energy

ISL9V2040/S3S/D3S 400V 10A 1.45V 6A, 4V, 25oC 200mJ TO263/TO252ISL9V2540S3S 400V 10A 1.45V 6A, 4V, 25oC 250mJ TO263 ISL9V3036P3/S3S/D3S 360V 17A 1.25V 6A, 4V, 25oC 300mJ TO220/TO263/TO252ISL9V3040P3/S3S/S3/D3S 400V 17A 1.25V 6A, 4V, 25oC 300mJ TO220/TO263/TO262/TO252ISL9V5036P3/S3S/S3 360V 31A 1.17V 10A, 4V, 25oC 500mJ TO220/TO263/TO262 ISL9V5045S3S/S3 480V 43A 1.25V 10A, 4V, 25oC 500mJ TO263/TO262 PCGA3056W 560V 17A 1.5V 8A, 5V, 25oC 300mJ Die

36

FGB3040CS Current Sense IGBT

37

Dual injector driver

FDSS2407•

62V, 132mΩ, 5V logic level gate dual MOSFET in SO-8

5V logic level feedback signal of the drain to source voltage.

Multiple devices can be wired “OR’d” to a single monitoring circuit input.

Gate drive disable input. Multiple devices controllable by a single disable transistor.

Qualified to AEC-Q101

Applications•

Automotive injector driver•

Solenoid driver

Gate Pad with Gate Resistor (R1)

Disable Diode (D1) Surrounding Disable Pad

4-Stack of Back-

to-Back Diodes (D2)

Feedback Resistor (R2)

Feedback Diode (D4) Surrounding Feedback Pad

Resistor (R3)Single Back-to-Back Diode (D3)

ETC FET - Feature Locations

Gate Feeds

Gate Feeds

Gate Feeds

38

Fairchild Temperature Sensing MOSFET

39

Y2006 Y2007 Y2008 Y2010

Automotive Ignition Product Roadmap

Y2009

FGB3040CSFGB3040CS

Standard Ecospark IGBTsStandard Ecospark IGBTs

TO247 Ignition Module MultifunctionTO247 Ignition Module Multifunction

TO247 Ignition ModuleTO247 Ignition Module

TO247 Ignition Module variantsTO247 Ignition Module variants

Self Limiting Ignition IGBTSelf Limiting Ignition IGBT

Multispark Opt IGBTMultispark Opt IGBT

SPM Tech

Ecospark

Tech TBD

PQFN Package VariationsPQFN Package Variations

40

Y2006 Y2007

Auto MOSFET Technology Roadmap

Y2008 Y2010Y2009

Low Voltage

20V ~ 40V

Ultrafet Trench 30VUltrafet Trench 30V

PT4 30V LLPT4 30V LL

40v PT4 SG40v PT4 SG

PT4 40V LLPT4 40V LL

PT4 40V TS/CS

Next generation 40/20 & 30/20 Low Rdson

Next generation 40/20 & 30/20 Low Rdson

PT4 40V Sync FETPT4 40V Sync FET

Mid Voltage

60V ~ 100V

Ultrafet Trench 60-150VUltrafet Trench 60-150V

PT3 100V LLPT3 100V LL

PT3 60V SG and LLPT3 60V SG and LL

PT3 75V LLPT3 75V LL

PT5 60-100v Low rdsonPT5 60-100v Low rdson

PT3 60v CS and TSPT3 60v CS and TS

PT5 60-100v CS & TSPT5 60-100v CS & TS

www.fairchildsemi.com

41

Package

42

Standard Automotive Product Packages

Discrete PackageACTIVE PART#'S

(281 total)

DPAK 90

TO263 85

TO220 36

SO8 18

TO262 11

Die/Wafer 10

SOT223 6

SOT23 5

TO247 4

SOT3 3

IPAK 3

5x6 PQFN 2

Other 8

43

Package Voltage Current rDS(on) Comments

SC-70 12V-100V 0.14A-.26A 0.1-0.6Ω

SOT-23 20V-100V 0.12A-0.9A 0.22-10Ω

SSOT-3 12V-60V 0.115A-3A 0.035-5Ω

SSOT-6 12V-200V 0.12A-6.3A 0.024-13Ω

SOT-223 20V-450V 0.4A-7.5A 0.03-4.25Ω

SO-8 20V-500V 0.37A-21A 0.0039-1Ω

5x6PQFN 20V-30V 2.2A-7.8A 0.030-0.220Ω Q3’08

TO-251/2 12V-1,000V 1A-160A 0.0039-1Ω Pkg

Lmt’d

~50A

TO-220/263 20V-900V 1.5A-160A 0.0039-10Ω Pkg

Lmt’d

~80A

Automotive Power MOSFET Summary

44

5 x 6 PQFN @ 175C under development

PQFN (Power Quad Flat No-Leads)•

Package design is driven by module size reduction higher power density required•

Max TJ > 175°C minimize RθJC

Lower inductance lower capacitance•

Minimize package footprint maximize current density•

Lower system cost

5x6 PQFN•

Max Die Size 132 x 124 x 8 mils•

(3.35 x 3.15 x 0.2mm)•

Max Wire Diam 8mil aluminum source wires•

Wirebond Al wedge bonding•

6 x 8mil (source)•

1 x 5mil (gate)•

EMC Green EMC TBD

PQFN vs. SO-8

45

2007 2008 20092006

TO220-7L

TO252-5L

PQFN 2mm thick in Suzhou

PQFN 1mm thick Cebu Assembly

Existing

New Development

TO263-7L

20PQFN

20WSOP

MLPs

Existing but need Automotive biz.

preparation

Package Roadmap

www.fairchildsemi.com

46

By application

47

Power Steering Solutions

40V MOSFET technology using Fairchild’s PowerTrench technology•

Qualified to AEC-Q101•

Low RDS(on) for system efficiency and size-offering 2.2mΩ, 2.6mΩ, 4.0mΩ, and 5.2mΩ

version•

Available in TO220 and TO263 (D2-Pak) packages, or as die

Fairchild Confidential

•12V SystemsFDB8441 TO263 FDB8860 FDB8832FDP8441 TO220 FDP8860 FDP883240V SG / 2.2mΩ

30V LL/ 2.6mΩ

30V LL/ 2.2mΩ

• 42V SystemsFDB045AN08A0 TO263FDP047AN08A0 TO220 75V / 4.5,4.7mΩ

48

Direct Injection Solutions

Level Shift Level Shift

100V Boost VBat

InjectorsFDB/D3682 D2-Pak/D-Pak

100V / 36mΩ

FDS3692 SO-8 100V / 60mΩ

FDD14AN06LA0 D-Pak 60V LL / 14mΩ

FDD24AN06LA0 D-Pak 60V LL / 22mΩ

Fairchild Confidential

49

Diesel Direct Injection Solutions for Piezo Actuators

SFP9640 TO220 200V / 500mΩ

P-Channel MOSFETFQB9P25 D2-Pak 250V / 620mΩ

P-Channel MOSFET HGT1S7N60A4S D2-Pak 600V/7A IGBT

IRFW644B D2-Pak 250V / 280mΩ

N-Channel MOSFET FQB14N30 D2-Pak 300V / 290mΩ

N-Channel MOSFET HGT1S7N60A4DS D2-Pak 600V/7A IGBT/Diode co-pak

FFB06U40S 400V / 6A D2-PakUltraFast Soft Recovery Diode

Fairchild Confidential

For DriverFAN7081 8SOPFAN7083 8SOP

50

Motor Control Solutions

60V/SG and 60V LL trench MOSFETs available•

3.5/3.8mΩ

in D2-Pak/TO220, 10.5mΩ

in D-Pak! •

30V/LL trench MOSFETs available •

3.9mΩ

in D-Pak!•

2.6 mΩ

in D2-Pak•

40V/SG In Development •

5.5mOhm and 9mOhm in production samples available•

Lower on-resistances production starting in Q306•

On-resistance as low as 2.2 mOhm in D2-Pak

Seats

Windows

Mirrors

TransmissionSteering

Lumbar

Door Locks

Wiper

Air Control

ThrottleFuel Pump

Brakes/Traction

Engine Coolant Fan

Fairchild Confidential

51

HID Lighting Headlamp Solutions

Ign

Vbatt

uController

Comms ASIC(s)

FGD3N60LSD DPAK 600V / 3A IGBT/Diode co-pak

FDB/P3632 TO263/TO220 100V / 9mΩFDB/P2532 TO263/TO220 150V /16 mΩRURD660S9A 600V / 6A Rectifier

52

Starter / Alternator Solutions

∅A

∅Β

∅C

CO

NT

RO

LL

ER

STARTER / ALTERNATOR

•12V SystemsFDB8832 TO263 - FDP8832 TO220 30V / 2.2mΩ

FDB8441 TO263 – FDP8441 TO22040V / 2.2mΩ

•42V SystemsFDB045AN08A0 TO263FDP047AN08A0 TO220 80V / 4.5, 4.7mΩ

www.fairchildsemi.com

53

Automotive Power Modules

54

EPS/EHPS MODULES

BENEFITS

LOWER OVERALL ELECTRICAL RESISTANCE AND HIGHER CURRENT HANDLING•

INCREASED ELECTRONICS INTEGRATION (LOWER NUMBER OF COMPONENTS)•

COMPACTNESS•

BETTER EMI PERFORMANCE•

LOWER MOTOR RIPPLE•

EASIER AND QUICKER INSTALLATION•

EQUIVALENT/LOWER COST AT SYSTEM LEVEL

Full three phase inverter (6 Die + thermistor + current sense resistor + EMI components) in a foot print of6 D2Pack only

Full three phase inverter in a foot print of just 2 D2Pack

FOR CAR MANUFACTURERS MAXIMUM OUTPUT FORCE OR TORQUEIS ONE OF THE MOST IMPORTANT FACTORS AS COST

55

Module Test

AUTOMOTIVE POWER MODULES – TEST STRATEGY

Type:

Timing:

Purpose:

Examples:

Application TestCV, DV, PVSamples

Design validation and Module performance evaluation at system level

Load dump, Driving cycle, Reverse battery, Locked rotor, Overload, Overcurrent, etc.

Reliability TestDVP&R, PVP&R

Evaluate module reliability

Standalone and sequential tests including: vibration, mechanical shock, thermal cycle, power cycle, autoclave, Lo/Hi temp storage, HT3RB/THB, etc.

Note: Module reliability requirements are almost always derived form car mfg specs rather than Q101 std.

Final TestPrototypes and end of production line

To detect electrically failed modules, weak devices (UIS) and thermal impedance defects

Full parametric test of Si devices, avalanche testing (UIS), ΔVSD during heating pulses for Zth verification, etc.

www.fairchildsemi.com

56

Why Power Modules?

57

BASEPLATE TEMPERATURE

CURRENT NEEDS

COMPACTNESS NEEDS

DISCRETES OR MODULES

58

MODULES

BENEFITS

LOWER OVERALL ELECTRICAL RESISTANCE AND HIGHER CURRENT HANDLING•

INCREASED ELECTRONICS INTEGRATION (LOWER NUMBER OF COMPONENTS)•

COMPACTNESS•

BETTER EMI PERFORMANCE•

LOWER MOTOR RIPPLE•

EASIER AND QUICKER INSTALLATION•

EQUIVALENT/LOWER COST AT SYSTEM LEVEL

LIMITS TO THEIR GROWTH (~ CUSTOMER PAIN POINTS)

DESIGN FLEXIBILITY•

LONGER DEVELOPMENT TIME•

INTENSIVE DEVELOPMENT AND MANAGEMENT OF POWER MODULE SUPPLIER•

REDUCED COMPETITION -> PERCEPTION OF HIGHER PROGRAM RISK

Full three phase inverter (6 Die + thermistor + current sense resistor + EMI components) is a foot print of6 D2Pack only

Full three phase inverter in a foot print of just 2 D2Pack

59

DISCRETES OR POWER MODULES

Low power density or large footprint

Current carrying capacity is limited by leadframes and IMS trace thickness

High total inverter resistance

High inverter inductance

Higher trace resistance/inductance for gate drive circuitry.

High thermal resistance j-sink •

Poor EMC characteristics due to routing of power and signal traces in the PCB/IMS

High power density or smaller footprint

Significantly enhanced current carrying capacity

Low total inverter resistance

Low inverter inductance

Higher trace resistance/inductance for gate drive circuitry.

Low thermal resistance j-sink•

Enhanced EMC characteristics due to easier isolation of power and signal pins and lower inductance

Better Temp sensing

DISCRETE SOLUTION MODULE SOLUTION

60

Automotive Modules vs Industrial modules

Program Management

- APQP followed - DV phase LAR goes 150%-300% beyond customer requirement/till failure to assess.

Safety margin

- Conservative design (larger wirebonds on gate, larger gate pad, fiducials)

Materials

- Components are all automotive rated - Higher grade materials (i.e. HPI instead of Std for DBC substrate)

Controls

- Increased parameters with Cpk control - Increase process gates/inspections - 100% testing for voids through Dvsd - Serialization human and machine readable through 2D matrix . - Traceability to raw material

PPAP

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61

AEC Qualification and PPAP?

62

AEC

AEC ??Automotive Electronics Council in America.Europe companies have their own specific qualification procedures.

AEC-Q100For ICsNormally 6 months to take it.Requirements ;

Tri-temperature production testing if no failures after customer specified quantity.Full Testing on sampling from predetermined assembly lot sequence.AEC-Q101 qualification required for discrete power semiconductor portion of ASIC

AEC-Q101For discretesNormally 3 months to take it. Requirements ;

63

PPAP

PPAP ??Production Part Approval Process, required for each individual customer part type.Normally 2 ~ 3 months to get it.

Requirements•

Fairchild RequirementsDevices from 3 lots required.30 devices/lot, serialized (and saved) for static tri-temperature testing

(-40 / 25 / Tjmax).5 devices/lot for each human body and machine model (HB & MM) ESD tests.UIS Testing 3 devices/inductor x 3 lots x 2 temperatures x 3 – 4 inductors.

Customer RequirementsMust fill out a Fairchild PPAP Check list. (It is a cooperative undertaking.)May have additional requirements.

64www.fairchildsemi.com