Power Semiconductor Product Guide 2019

Power Semiconductor Product Guide 2019

Industry-Leading High-Power IGBT Modules

World-ClassHigh-Efficiency Bipolar Range

www.dynexsemi.com

Contents

Dynex Semiconductor has a rich history in the design, development and production of High Power Semiconductors and Power Assemblies.

Throughout the years, our products have been applied in projects that vary from Traction, Power Quality through HVDC, Renewable Energy production to helping science advance.

IGBT Modules 03750V IGBT ModulesSix Pack and Half Bridge 04

Flat Base Rectifier Diode 31

Package Outlines 36IGBT Modules 37, 38

FRD Modules 39

Thyristors and Diodes 40

GTO 41

Symbols and Definitions 42

Explanation of Part Numbers 34

Foundry Services 33

Bipolar Thyristors 19Phase Control Thyristors 20, 22

Gate Turn off Thyristors 23

Asymmetric Bypass Thyristors 23

Pulsed Power Thyristors 25

Diodes 27Rectifier Diodes 28, 30

Fast Recovery Diodes 30

Important Information 44

1200V IGBT ModulesChoppers, Dual Switches and Single Switches 04

1700V IGBT ModulesBi-directional Switches, Choppers, Dual Switches,Half Bridges and Single Switches 04, 06

3300V IGBT ModulesChoppers, Dual Switches, Half Bridges and Single Switches 06, 07

4500V IGBT ModulesChoppers, Single Switches 07

6500V IGBT ModulesChoppers, Single switches 07

Open Source 08

IGBT Press-pack 09

Custom IGBT Modules 10

Design Tool 11

FRD Modules 131200V FRD ModulesDual Diodes and Triple Diodes 15

1800V FRD ModulesDual Diodes and Triple Diodes 15

3300V FRD ModulesDual Diodes, Triple Diodes and Series Pair Diodes 15

4500V and 6500V FRD ModulesDual Diodes and Triple Diodes 17

3 Any questions? Email [email protected]

DYN-PS-19001

2

IGBT Modules

2 3

Superior Power Cycling with the latest generation IGBT die

High DC stability via advanced edge termination design and passivationHigh short circuit capability-wide SCSOASelf-limiting short circuit currentLow switching lossesClass-leading robustnessT(vj op) = 150°CAlSiC Baseplate for increased thermal cycling capabilityPackage design with CTI > 600Isolated base plate500A to 3600A at 750V to 6500V

APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Different circuit topologies (half bridge, single switch, chopper)

The Dynex manufacturing plant is a vertically integrated facility with device design, wafer fab, packaging, qualification and testing available on site.

The acclaimed DIM (IGBT High-Power Modules) are robust and work with high reliability at any temperature condition from -40/-50°C up to +150°C.

Great emphasis is placed on low inductance power bus bar designs so the module can cope with fast switching transients such as, those of next generation trench gateIGBT’s and SiC MOSFET.

KEY FEATURES


Part Number

Configuration Production Status

IC(A)

at TC(°C)

VCE (sat) @ Tc=25°C

(V)

Total Esw @

Tc=125°C (mJ)

Rth(j-c)(per switch)

(°C/kW)

Baseplate Dims (mm)

Isolation Voltage

Tech

DNPT Range

DIM2400ESM17-A Single MP 2400 75 2.7 1950 6 190 x 140 4 kV DNPT

DIM1600FSM17-A Single MP 1600 75 2.7 1250 9 140 x 130 4 kV DNPT

DIM1600ECM17-A Chopper MP 1600 75 2.7 1250 9 190 x 140 4 kV DNPT



DIM800DDM17-A Dual MP 800 75 2.7 700 18 140 x 130 4 kV DNPT

DIM800DCM17-A Chopper MP 800 75 2.7 785 18 140 x 130 4 kV DNPT




1200V IGBT Modules

Part Number


IC(A)

at TC(°C)

VCE (sat) @

Tc=25°C (V)

Total Esw @

Tc=125°C (mJ)


(°C/kW)

Baseplate Dims (mm)

Isolation Voltage

Tech

AISiC Baseplate

DIM2400ESM12-A Single MP 2400 85 2.2 800 6 190 x 140 2.5kV DNPT

DIM1800ESM12-A Single MP 1800 85 2.2 570 8 190 x 140 2.5kV DNPT

DIM1600FSM12-A Single MP 1600 85 2.2 500 9 140 x 130 2.5kV DNPT



DIM800DDM12-A Dual MP 800 85 2.2 280 18 140 x 130 2.5kV DNPT

DIM800DCM12-A Chopper MP 800 85 2.2 280 18 140 x 130 2.5kV DNPT



Copper Baseplate

DIM1600FSS12-A Single MP 1600 85 2.2 500 9 140 x 130 2.5kV DNPT



DIM800DCS12-A Chopper MP 800 85 2.2 280 18 140 x 130 2.5kV DNPT

DIM800DDS12-A Dual MP 800 85 2.2 280 18 140 x 130 2.5kV DNPT



1700V IGBT Modules

Industry-Leading Next Generation IGBT Modules

Reliability . Efficiency . Operating Performance

Demonstrable lowest total losses of any module on the market150ºC operating junction temperature for greater durabilityThe most robust module package3 chip options for performance optimizationLatest Generation Dynex-proprietary LOCOS Trench Gate designs

1800A 3.3kV, 1500A 4.5kV, 1000A 6.5kVDMOS & TRENCH GATE

IGBT Modules

750V IGBT ModulesPart Number


IC(A)

at TC(°C)

VCE (sat) @

Tc=25°C (V)

Total Esw @

Tc=150°C (mJ)


(°C/kW)

Baseplate Dims (mm)

Isolation Voltage

Tech

TSPT Range

TG800FF08S1-S3A Six Pack MP 800 65 1.45 50 109 216 x 100 2.5 kV TSPT

TG600HF08M1-S3A Half Bridge MP 600 65 1.5 76 90 152 x 62 2.5 kV TSPT

TG600FF08S3-S3A Six Pack MP 600 80 1.3 43.3 134 155 x 127 2.5 kV TSPT

TG400FF08S2-S3A Six Pack MP 400 65 1.65 22.8 200 140 x 112 2.5 kV TSPT

TSPT Range



2000A 3.3kV, 1200A 6.5kV Upcoming


Low Conduction Loss Range

DIM1000ASM65 - UL Trench Gate Single MP 1000 90 2.6 10300 9 190 x 140 10.2 kV TSPT

Low Switching Loss Range

DIM1500ASM45-UF Trench Gate Single MP 1500 90 3.2 11100 8 190 x 140 7.4 kV TSPT

DIM1200ASM45-TF Single MP 1200 90 3.5 11100 8 190 x 140 7.4 kV d2

DIM1200ASM45-TF001 Single MP 1200 90 3.5 8950 8 190 x 140 10.2 kV d2

4500V IGBT Modules

Part Number


IC(A)

at TC(°C)

VCE (sat) @

Tc=25°C (V)

Total Esw @

Tc=125°C (mJ)


(°C/kW)

Baseplate Dims (mm)

Isolation Voltage

Tech

Standard Range

DIM1200ASM45-TS Single MP 1200 90 2.7 11100 8 190 x 140 7.4 kV d2

DIM1200ASM45-TS001 Single MP 1200 90 2.7 11100 8 190 x 140 10.2 kV d2

DIM800XSM45-TS Single MP 800 90 2.7 7400 12 140 x 130 7.4 kV d2

DIM800XSM45-TS001 Single MP 800 90 2.7 7400 12 140 x 130 10.2 kV d2

DIM400XCM45-TS Chopper MP 400 90 2.7 3800 24 140 x 130 7.4 kV d2

DIM400XCM45-TS001 Chopper MP 400 90 2.7 3800 24 140 x 130 10.2 kV d2


DIM400XSM45-TS001 Single MP 400 90 2.7 3800 24 140 x 130 10.2 kV d2


DIM1200ASM45-TL Single MP 1200 90 2.3 13650 8 190 x 140 7.4 kV d2

DIM1200ASM45-TL001 Single MP 1200 90 2.3 13650 8 190 x 140 10.2 kV d2

DIM800XSM45-TL Single MP 800 90 2.3 9100 12 140 x 130 7.4 kV d2

DIM800XSM45-TL001 Single MP 800 90 2.3 9100 12 140 x 130 10.2 kV d2

6500V IGBT Modules

IGBT Modules

1700V IGBT Modules

Part Number


IC(A)

at TC(°C)

VCE (sat) @ Tc=25°C

(V)

Total Esw @

Tc=125°C (mJ)


(°C/kW)

Baseplate Dims (mm)

Isolation Voltage

Tech

DNPT Range


DIM400PHM17-A Half Bridge MP 400 75 2.7 350 36 140 x 73 4 kV DNPT

DIM400PBM17-A Bi-directional MP 400 75 4.9 350 36 140 x 73 4 kV DNPT

TSPT RangeTIM2400ESM17-TSA Single MP 2400 100 1.75 2220 6 190 x 140 4 kV TSPT

TIM2400NSM17-TSA Single MP 2400 85 2.10 2220 10 140 x 130 4 kV TSPT

TIM1600FSM17-PSA Single MP 1600 80 2.3 1210 9 140 x 130 4 kV PSPT

TIM1200DDM17-TS000 Dual MP 1200 75 1.80 788 22 140 x 130 4 kV TSPT

TG1000HF17H1-S300 Half Bridge MP 1000 85 1.85 745 20 250 x 89 4 kV TSPT

TIM800DDM17-TS000 Dual MP 800 80 2.30 520 18 140 x 130 4 kV PSPT

TIM800DCM17-PSA Chopper MP 800 80 2.30 520 18 140 x 130 4 kV PSPT

TG650HF17H2-S3 Half Bridge MP 650 100 1.85 420 30 172 x 89 4 kV TSPT

3300V IGBT Modules

Part Number


IC(A)

at TC(°C)

VCE (sat) @

Tc=25°C (V)

Total Esw @

Tc=150°C (mJ)


(°C/kW)

Baseplate Dims (mm)

Isolation Voltage

Tech

Standard Range

DIM1500ESM33-MS Single MP 1500 120 2.2 8200 7 190 x 140 6kV d2

DIM1500ESM33-TS Single MP 1500 110 2.2 6200 8 190 x 140 6kV d2

DIM1500ASM33-TS001 Single MP 1500 110 2.2 6200 8 190 x 140 10.2kV d2

DIM1000NSM33-TS Single MP 1000 110 2.2 3850 12 140 x 130 6kV d2

DIM1000XSM33-TS001 Single MP 1000 110 2.2 3850 12 140 x 130 10.2kV d2

DIM1000ECM33-TS Chopper MP 1000 110 2.2 3850 12 190 x 140 6kV d2

DIM1000ACM33-TS001 Chopper MP 1000 110 2.2 4300 12 190 x 140 10.2kV d2

DIM500GDM33-TS Dual MP 500 110 2.2 2100 24 140 x 130 6kV d2

DIM500GCM33-TS Chopper MP 500 110 2.2 2100 24 140 x 130 6kV d2

DIM250PKM33-TS Chopper MP 250 110 2.2 1040 48 140 x 73 6kV d2

DIM250PLM33-TS Chopper MP 250 110 2.2 1040 48 140 x 73 6kV d2

DIM250PHM33-TS Half Bridge MP 250 110 2.2 1040 48 140 x 73 6kV d2


DIM1500ESM33-TL Single MP 1500 115 2.0 7800 8 190 x 140 6 kV d2

DIM1500ASM33-TL001 Single MP 1500 115 2.0 7800 8 190 x 140 10.2 kV d2

DIM1000NSM33-TL Single MP 1000 115 2.0 4840 12 140 x 130 6 kV d2

DIM1000XSM33-TL001 Single MP 1000 115 2.0 4840 12 140 x 130 10.2 kV d2

DIM1000ECM33-TL Chopper MP 1000 115 2.0 4840 12 190 x 140 6 kV d2

DIM1000ACM33-TL001 Chopper MP 1000 115 2.0 4840 12 190 x 140 10.2 kV d2

DIM500GDM33-TL Dual MP 500 115 2.0 4840 12 190 x 140 6 kV d2

DIM500GCM33-TL Chopper MP 500 115 2.0 2650 24 140 x 130 6 kV d2

DIM250PKM33-TL Chopper MP 250 115 2.0 1300 48 140 x 73 6 kV d2

DIM250PLM33-TL Chopper MP 250 115 2.0 1300 48 140 x 73 6 kV d2

DIM250PHM33-TL Half Bridge MP 250 115 2.0 1300 48 140 x 73 6 kV d2


DIM1200ASM65-UF Trench Gate Single NEW 1200 90 3.2 35000 9 190 x 140 10.2 kV TSPT

DIM1000ASM65-UF Trench Gate Single MP 1000 90 3.2 13800 8 190 x 140 10.2 kV TSPT

DIM750ASM65-TF Single MP 750 90 3.2 10200 9 190 x 140 10.2 kV d2

IGBT Modules

* Vce(sat) is measured across both arms of the bi-directional switch. MP: Mass Production NEW: New Products NRND: Not Recommended for New Design

TSPT - Trench Soft Punch Through PSPT - Planner Soft Punch Through DNPT - Dynex Non Punch Through


DIM2000ESM33-UF Trench Gate Single NEW 2000 108 2.3 12500 7 190 x 140 6kV TSPT

DIM1800ESM33-UF Trench Gate Single NEW 1800 108 2.3 11000 7 190 x 140 6kV TSPT

DIM1500ESM33-MF Single MP 1500 108 3.3 3950 7 190 x 140 6kV d2

Part Number


IC(A)

at TC(°C)

VCE (sat) @

Tc=25°C (V)

Total Esw @

Tc=125°C (mJ)


(°C/kW)

Baseplate Dims (mm)

Isolation Voltage

Tech

* Vce(sat) is measured across both arms of the bi-directional switch. MP: Mass Production NEW: New Products NRND: Not Recommended for New Design

Part Number


IC(A)

at TC(°C)

VCE (sat) @

Tc=25°C (V)

Total Esw @

Tc=125°C (mJ)


(°C/kW)

Baseplate Dims (mm)

Isolation Voltage

Tech

Standard Range

DIM750ASM65-TS Single MP 750 90 3.0 10300 9 190 x 140 10.2 kV d2


DIM500ACM65-TS Chopper MP 500 90 3.0 7000 12 190 x 140 10.2 kV d2

DIM250XCM65-TS Chopper MP 250 90 3.0 3500 24 140 x 130 10.2 kV d2

76 For further information and datasheets visit www.dynexsemi.comAny questions? Email [email protected]

Part Number

Configuration Production Status IC(A)

at TC(°C)

VCE (sat) @

Tc=25°C (V)

Total Esw @

Tc=125°C (mJ)


(°C/kW)

Flange OD/Contact OD/Height (mm)

Isolation Voltage

Tech

All-IGBT

DPI2100P45A All IGBT MP 2100 95 2.4 19800 4.4 170/125/26.5 - d2

All-FRD

DPF2100P45A FRD MP 2100 105 - 8800 4.4 170/125/26.5 - d2

Co-Pack

DPI1600P45C Co-Pack MP 1600 90 2.5 17100 6.4 170/125/26.5 - d2

DPI1200P45C Co-Pack MP 1200 90 2.6 17600 8.8 170/125/26.5 - d2

4500V IGBT Press-pack

Straightforward flexibility for new and existing designs

Press-pack IGBTs for HVDC and FACTS

Novel housing solution using a typical hermetically-sealed hockey puck ceramic housing with internal compliance mechanism ensures optimum contact pressure distribution across all chips with standard thyristor heatsink and clamp assemblies and prevents over pressurisation of chips

IGBT Press-Pack

New chipset designed and manufactured by Dynex in the UK.

Chip assemblies employ silver sintering technology for improved robustness and improved thermal characteristics

The popularity of insulated gate bipolar transistors (IGBTs) for use in high-voltage direct current (HVDC) transmission and flexible AC transmission systems (FACTS) is increasing. Unfortunately, for these applications, wire-bond IGBT technology has a number of shortcomings such as; insuf-ficient current ratings for the most powerful schemes, and inability to fail to short-circuit. Press-pack IGBT technology,conversely offers increased current ratings and an inherent short-circuit failure mode making it a more attractive choice for HVDC and FACTS.

The Dynex Press-pack IGBT range is based on a flexible, scalable design. Making it straightforward to produce devices with a variety of contact diameters, current ratings and IGBT: FRD chip ratios. Dynex’s chip design and in-house fabrication capabilities make it possible to tune chipsets to specific applications. Dynex Press-pack IGBT devices are now available at a variety of power levels; up to 2100A at 4500V. Making Dynex the ideal partner for both new and existing designs.

Product Features

Highest Engineering Capability for Customised Design Open Source Modules

High Voltage Packages 3.3kV to 6.5kVLower Voltage Packages up to 3.3kV

Need a different size or voltage? Contact us with your specific requirements ...

Get in Touch with Your Requirements +44 (0)1522 502 901 [email protected]

SHV & SLV Range in Development

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.

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9For further information and datasheets visit www.dynexsemi.com

Custom IGBT ModulesEnhancing our range of power semiconductor devices, Dynes Semiconductor Ltd has the capability to design, develop and manufacture custom IGBT modules.

Applications for power electronics devices often involve harsh operating conditions or environments necessitating devices capable of meeting these requirements.

Dynex semiconductor utilises our vast experience in the manufacture of power semiconductors to design and produce high reliability IGBT modules customised to meet the individual demands for end applications including those in the aerospace, automotive, medical, renewable energy and traction markets.

Dynex capabilities can encompass the following:

• Laser welded assemblies

• Ultrasonic Welding processes

• Copper Wire bonds

• Various die technologies (Trench gate, SiC)

• Liquid cooled heatsinks

• Customised busbar arrangements

• Silver Sintering

• Customised packaging (case materials)

• Hermetic sealed packages

Using our experience in design of IGBT modules, Dynex has designed and manufactured modules that have helped our customers:

• Reduce system cost

• Reduce total system size and weight

• Improve thermal characteristics

• Maximise system efficiency

• Operate in severe environments

Using our in-house design team, Dynex continues to develop our own processes and designs to utilise the latest techniques to improve cooling, current output, lifetime and reliability.

Through initial concept to full production, Dynex will support your requirements to provide enhanced, reliable device outlines to meet your stringent demands.

For more information on how Dynex can help with your custom IGBT needs, please email [email protected]

Custom IGBT Modules

• Carrier and Reference

Access the tool via www.dynexsemi.com or directly through https://dynex.pe-finder.de/

DESIGN TOOL

Our online tool is designed to assist you in choosing the right Dynex semiconductors, using the intergrated digital datasheet you can analyse our components’ properties and perfomance at your specific operating point which may differ from the nominal conditions in the datasheet.

This extended database is also used to simulate the electrical and thermal behaviour of our components in all typical power electronic topologies, that can be adjusted to meet the requirements of your specific application.

Simulations can be conducted for both grid and motor applications and the type of the reactive power generated can be set to inductive or capacitive with toggle switches. The affect of the third harmonic injection can be analysed using another toggle switch provided.

The instantaneous and average power losses in each semiconductor component of the circuit are displayed for each topology selected along with other outputs shown below.

• Converter Output & Grid Voltage

• Alternating Current & Grid Voltage

• Conduction Losses in Phase 1

• Current in Phase 1

• Switching Losses in Phase 1

Easy selection of the Dynex device most applicable to the application


FRD ModulesRegulate electricity flow to

ensure higher reliability and increased efficiency

Low reverse recovery chargeHigh switching speedLow forward Volt DropIsolated AlSiC base with AlN substratesSingle, double and triple diode configurations available with current ratings up to 3600A

Chopper diodesBoost and buck circuitsFree-wheel circuitsMulti-level switch invertersRail tractionIndustrial motor drivesInduction heatingPower generation

KEY FEATURES

APPLICATIONS

Dynex's FRD modules regulate electricity flow to ensure higher reliability and increased efficiency in motor drives and other variable speed processes.

The family of high-voltage fast recovery diode (FRD) modules has been designed for use in rail traction, industrial motor drives, induction heating and power generation.

The FRD modules are designed to match and work as the input rectifiers for the existing Dynex range of IGBT modules.

Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing PWM and high frequency switching.


1200V FRD Modules

Part Number


IF(A per arm)

at TC(°C)

Baseplate Dims (mm)

Isolation Voltage

IF(A as single diode with

external connection)

Vf@ Tvj =25 ºC

I2t (kA2s)

Qrr@ Tvj Erec@ Tvj Rth(j-c) (per arm) (°C/kW)

AISiC Baseplate

DFM1200EXM12-A Triple Diode MP 1200 75 190 x 140 2.5 kV 3600 1.9 200 300 140 20

DFM1200FXM12-A Dual Diode MP 1200 75 140 x 130 2.5 kV 2400 1.9 200 300 140 20



Copper Baseplate

DFM1200FXS12-A Dual Diode NRND 1200 75 140 x 130 2.5 kV 2400 1.9 200 300 140 20



1800V FRD Modules

Part Number


IF(A per arm)

at TC(°C)

Baseplate Dims (mm)

Isolation Voltage



Vf@ Tvj =25 ºC

I2t (kA2s)


AISiC Baseplate

DFM1200EXM18-A Triple Diode MP 1200 75 190 x 140 4 kV 3600 2.0 480 540 360 20

DFM1200FXM18-A Dual Diode MP 1200 75 140 x 130 4 kV 2400 2.0 480 540 360 20



3300V FRD Modules

Part Number


IF(A per arm)

at TC(°C)

Baseplate Dims (mm)

Isolation Voltage



Vf@ Tvj =25 ºC

I2t (kA2s)


TS Range

DFM1000EXM33-TS Triple Diode MP 1000 90 190 x 140 6 kV 3000 2.4 320 1070 1300 24

DFM1000NXM33-TS Dual Diode MP 1000 90 140 x 130 6 kV 2000 2.4 320 1070 1300 24

DFM500NXM33-TS Dual Diode MP 500 90 140 x 130 6 kV 1000 2.4 80 540 650 48

DFM250PXM33-TS Series Pair MP 250 90 140 x 73 6 kV N/A 2.4 20 270 330 96

F Range (fast)

DFM1200NXM33-F Dual Diode MP 1200 70 140 x 130 6 kV 2400 2.9 720 900 900 16



DFM400PXM33-F Series Diode MP 400 70 140 x 73 6 kV N/A 2.9 80 300 300 48



Notes:* Refer to datasheets for Tvj max values www.dynexsemi.com/products/semiconductors/frd-modules

FRD Modules

3.3kV Diode modules to partner 1500A, 1800A and 2000A Under DevelopmentPlease call us on +44 (0)1522 502 901 or email [email protected]

15For further information and datasheets visit www.dynexsemi.com14 Any questions? Email [email protected]

Fast Recovery Time | Higher Reliability| | Increased Efficiency

FRD ModulesSingle / Dual / Triple / Series Pair Diodes - 1.2 kV 1.8kV 3.3 kV 4.5kV 6.5kV

Low Conduction Losses & Thermal ResistanceHigh Voltage CapabilityHigh Switching SpeedLow Reverse Recovery ChargeLow Forward Volt DropIsolated AlSiC Base With AlN Substrates

4500V FRD Modules

Part Number


IF(A per arm)

at TC(°C)

Baseplate Dims (mm)

Isolation Voltage



Vf@ Tvj =25 ºC

I2t (kA2s)

Qrr@ Tvj Erec@ Tvj

Rth(j-c) (per arm)

(°C/kW)

TS Range

DFM1200AXM45-TS Triple Diode MP 1200 65 190 x 140 7.4kV 3600 2.8 460 2200 4000 16

DFM1200AXM45-TS001 Triple Diode MP 1200 65 190 x 140 10.2 kV 3600 2.8 460 2200 4000 16

DFM1200XXM45-TS Dual Diode MP 1200 65 140 x 130 7.4kV 2400 2.8 460 2200 4000 16

DFM1200XXM45-TS001 Dual Diode MP 1200 65 140 x 130 10.2 kV 2400 2.8 460 2200 4000 16

DFM800XXM45-TS Dual Diode MP 800 65 140 x 130 7.4 kV 1600 2.8 300 1450 2700 24

DFM800XXM45-TS001 Dual Diode MP 800 65 140 x 130 10.2 kV 1600 2.8 300 1450 2700 24

DFM400XXM45-TS Dual Diode MP 400 65 140 x 130 7.4kV 800 2.8 150 750 1350 48

DFM400XXM45-TS001 Dual Diode MP 400 65 140 x 130 10.2kV 800 2.8 150 750 1350 48

6500V FRD Modules

FRD Modules

Part Number


IF(A per arm)

at TC(°C)

Baseplate Dims (mm)

Isolation Voltage


external con-nection)

Vf@ Tvj =25 ºC

I2t (kA2s)

Qrr@ Tvj Erec@ Tvj

Rth(j-c) (per arm)

(°C/kW)

TS Range

DFM750AXM65-TS Triple Diode MP 750 70 190 x 140 10.2 kV 2250 3.8 218 1500 3000 20



* Vce(sat) is measured across both arms of the bi-directional switch.

MP: Mass Production NEW: New Products NRND: Not Recommended for New Design

4.5kV Diode Modules to partner 1500A Under DevelopmentPlease call us on +44 (0)1522 502 901 or email [email protected]

6.5kV Diode Modules to partner 1000A, 1200A Under DevelopmentPlease call us on +44 (0)1522 502 901 or email [email protected]


Bipolar Thyristors World-class high-efficiency

Bipolar Range

KEY FEATURESThinner silicon, lower conduction lossesUnique bevel maximises current and surge ratingsExclusive Aluminium diffusion techniques Current ratings from 370A to 7610AVoltage ratings from 1400V to 8500V with custom designsFull blocking voltage capability at line frequencies from -40°C to + 125°C

APPLICATIONSHigh power drivesHigh voltage power suppliesStatic switches

Dynex Semiconductor Bipolar Thyristors are produced in both Lincoln, England and Zhuzhou, China. Development continues to produce designs with lower losses, higher blocking voltages, higher current capability and devices tailored for particular applications.

The Thyristor range consists of Phase Control Thyristors, Gate Turn Off Thyristors, Pulse Power Thyristors and Asymmetric Thyris-tors.


Thinner Silicon with

Lower Conduction

Losses Than Ever Before

High ReliabilityHigh Overload Capability Low Thermal Resistance

1.4kV to 8.5kV

Phase Control, Gate Turn-Off, Pulse Power & Aysmmetric Bypass Thyristors

Double Side CoolingHigh Surge Current CapabilityFault Protection without Fuses Current Ratings from 370A to 7610A AverageFull blocking voltage capability at line frequenciesfrom -40°C to + 125°C

Part Number

VDRM (V) VRRM (V) IT (AV) at TC= 60°C

(A)

ITSM at Tvj VR = 0

(kA)

dV/dt(V/µs)

Non Rep. dI/dt (A/µs)

Rth(j-c)(°C/W)

Outline Type Code

Flange OD Contact OD Height

(mm)

Clamping Force (kN) min - max

Up to 1400V

DCR470T14 1400 1400 470 6.3 1000 1000 0.08 T 42/19/13.5 4-6

DCR780E14 1400 1400 780 9.1 1000 1000 0.041 E 42/25/14.5 4-6

DCR950D14 1400 1400 950 12.8 1000 1000 0.035 D 47/29/14.5 8-12

DCR1010G14 1400 1400 1010 15 1000 1000 0.035 G 58/35/26.5 12-18

DCR1910F14 1400 1400 1910 26 1000 1000 0.02 F 75/47/26.5 18-26

DCR2150X14 1400 1400 2150 29 1000 1000 0.018 X 85/53/26.5 26-34

DCR2980C14 1400 1400 2980 47 1000 1000 0.0125 C 100/63/26.5 40-50

DCR3710V14 1400 1400 3710 60 1000 1000 0.01 V 110/73/26.5 50-62

Up to 1800VDCR370T18 1800 1800 370 5 1000 1000 0.08 T 42/19/13.5 4-6

DCR720E18 1800 1800 720 8.3 1000 1000 0.041 E 42/25/14.5 4-6

DCR860D18 1800 1800 860 11.5 1000 1000 0.035 D 47/29/14.5 8-12

DCR960G18 1800 1800 960 14 1000 1000 0.035 G 58/35/26.5 12-18

DCR1710F18 1800 1800 1710 25 1000 1000 0.02 F 75/47/26.5 18-26

DCR1800F18 1800 1800 1800 32 1000 1000 0.02 F 75/47/26.5 18-26

DCR1970X18 1800 1800 1970 28 1000 1000 0.018 X 85/53/26.5 26-34

DCR2830C18 1800 1800 2830 45 1000 1000 0.0125 C 100/63/26.5 40-50

DCR3400V18 1800 1800 3400 60 1000 1000 0.01 V 110/73/26.5 50-62

Up to 2400VDCR4440W22 2200 2200 4440 64.5 1000 1000 0.007 W 120/84/26.5 62-78

DCR5900A22 2200 2200 5900 80 1000 1000 0.0057 A 150/100/35 80-100

DCR6430M22 2200 2200 6430 80 1000 1000 0.005 M 150/100/26.5 80-100

DCR590E24 2400 2400 590 7.8 1000 1000 0.041 E 42/25/14.5 4-6

DCR750D24 2400 2400 750 10 1000 1000 0.035 D 47/29/14.5 8-12

DCR1700X24 2400 2400 1700 23 1000 1000 0.018 X 85/53/26.5 26-34

DCR2360C24 2400 2400 2360 35 1000 1000 0.0125 C 100/63/26.5 40-50

DCR3060V24 2400 2400 3060 45 1000 1000 0.01 V 110/73/26.5 50-62

Up to 3000VDCR850G26 2600 2600 850 11 1000 1000 0.035 G 58/35/26.5 12-18

DCR1560F26 2600 2600 1560 24 1000 1000 0.02 F 75/47/26.5 18-26

DCR7610H28 2800 2800 7610 105 1000 1000 0.004 H 172/110/35 110-130

DCR2060C28 2800 2800 2060 30 1000 1000 0.0125 C 100/63/26.5 40-50

DCR2760V28 2800 2800 2760 43 1000 1000 0.01 V 110/73/26.5 50-62

DCR4590B28 2800 2800 4590 65 2000 500 0.007 B 120/84.6/34.64 68-84

DCR4910W28 2800 2800 4910 65 2000 500 0.00631 W 120/84/26.5 68-84

DCR5900A28 2800 2800 5900 79 2000 250 0.00603 A 150/100/35 74-91

DCR5790M28 2800 2800 5790 75 1000 1000 0.005 M 150/100/26.5 80-100

DCR780G30 3000 3000 780 10.5 1000 1000 0.035 G 58/35/26.5 12-18

DCR1460F30 3000 3000 1460 23 1000 1000 0.02 F 75/47/26.5 18-26

Up to 3400VDCR470E34 3400 3400 470 6.3 1000 1000 0.041 E 42/25/14.5 4-6

DCR610D34 3400 3400 610 8 1000 1000 0.035 D 47/29/14.5 8-12

DCR650G34 3400 3400 650 8.4 1000 1000 0.035 G 58/35/26.5 12-18

DCR1120F34 3400 3400 1120 17 1000 1000 0.02 F 75/47/26.5 18-26

DCR1430X34 3400 3400 1430 19.2 1000 1000 0.018 X 85/53/26.5 26-34

DCR1970C34 3400 3400 1970 30 1000 1000 0.0125 C 100/63/26.5 40-50

DCR2440V34 3400 3400 2440 33 1000 1000 0.01 V 110/73/26.5 50-62

DCR3640W34 3400 3400 3640 54 1000 1000 0.007 W 120/84/26.5 62-78

DCR4720A34 3400 3400 4720 69 1000 1000 0.057 A 150/100/35 80-100

DCR5110M34 3400 3400 5110 69 1000 1000 0.005 M 150/100/26.5 80-100

Phase Control Thyristors


Part Number

VDRM (V) VRRM (V) IT (AV) at TC= 60°C

(A)

ITSM at Tvj VR = 0

(kA)

dV/dt(V/µs)

Non Rep. dI/dt (A/µs)

Rth(j-c)(°C/W)

Outline Type Code


(mm)


Up to 4200VDCR780G42 4200 4200 780 10.5 1500 400 0.0268 G 58.5/34/26.72 10-13

DCR1150N42 4200 4200 1150 16.8 1500 1000 0.0221 N 73/47/34.89 20-25

DCR1260F42 4200 4200 1255 16.8 1500 1000 0.0184 F 73/47/26.72 20-25

DCR2040L42 4200 4200 2040 29 1500 400 0.0117 L 98.9/62.85/34.82 33-41

DCR2150C42 4200 4200 2150 29 1500 400 0.0101 C 98.9/62.9/26.76 33-41

DCR2930Y42 4200 4200 2930 40.6 1500 400 0.00835 Y 112.5/73/35.35 48-59

DCR3030V42 4200 4200 3030 40.6 1500 400 0.00746 V 110/73/27.57 48-59

DCR3790B42 4200 4200 3790 53.5 1500 400 0.007 B 120/84.6/34.87 63-77

DCR4100W42 4200 4200 3880 53.5 1500 400 0.00631 W 120/84.6/27.57 68-84

DCR4500A42 4200 4200 4500 60.8 2000 500 0.00603 A 148/100/35.47 74-91

DCR4880M42 4200 4200 4880 60.8 2000 500 0.00518 M 148/100/26.12 74-91

DCR6140H42 4200 4200 6138 90.91 2000 500 0.004255 H 172/115/35.15 120-155

DCR6650H42 4200 4200 6650 98.56 2000 500 0.004255 H 172/115/35.15 120-155

Up to 5200VDCR690G52 5200 5200 690 9.45 1500 300 0.0268 G 58.5/34/26.84 10-13

DCR1020N52 5200 5200 1018 14.8 1500 800 0.0221 N 73/47/34.89 20-25

DCR1110F52 5200 5200 1107 14.8 1500 800 0.0184 F 73/47/26.84 20-25

DCR1850L52 5200 5200 1845 26.25 1500 300 0.0117 L 98.9/62.85/34.94 33-41

DCR1950C52 5200 5200 1950 26.25 1500 300 0.0101 C 98.9/62.9/26.84 33-41

DCR2630Y52 5200 5200 2630 36.7 1500 300 0.00835 Y 112.5/73/35.47 48-59

DCR2720V52 5200 5200 2720 36.7 1500 300 0.00746 V 110/73/27.69 48-59

DCR3480B52 5200 5200 3480 49 1500 400 0.007 B 120/84.6/34.99 68-84

DCR3640W52 5200 5200 3550 49 1500 400 0.00631 W 120/84.6/27.69 68-84

DCR3990A52 5200 5200 3990 53.4 2000 1000 0.00603 A 148/100/35.61 74-91

DCR4330M52 5200 5200 4325 53.4 2000 1000 0.00518 M 148/100/26.26 74-91

DCR5240H52 5200 5200 5240 77.8 2000 500 0.004255 H 170/115/35.27 120-155

DCR5890H52 5200 5200 5890 86.97 2000 500 0.004255 H 170/115/35.27 120-155

Up to 6500VDCR490J65 6500 6500 490 6.6 1500 200 0.0379 J 57/33.95/35.15 10-13

DCR590G65 6500 6500 595 6.6 1500 200 0.0268 G 58.5/34/27.1 10-13

DCR820N65 6500 6500 820 12 1500 200 0.0221 N 73/47/35.15 20-25

DCR890F65 6500 6500 894 12 1500 200 0.0184 F 73/47/27.1 20-25

DCR1570L65 6500 6500 1568 22 1500 300 0.0117 L 98.9/62.85/35.2 33-41

DCR1650C65 6500 6500 1650 22 1500 300 0.0101 C 98.9/62.9/27.1 33-41

DCR2220Y65 6500 6500 2220 30 1500 300 0.00835 Y 112.5/73/35.73 48-59

DCR2290V65 6500 6500 2290 30 1500 500 0.0074 V 110/73/27.95 48-59

DCR2880B65 6500 6500 2845 38.5 1500 300 0.007 B 120/84.6/35.25 68-84

DCR2950W65 6500 6500 2945 38.5 1500 300 0.00631 W 120/84.6/27.95 68-84

DCR3220A65 6500 6500 3220 44.2 2000 500 0.00603 A 148/100/35.85 74-91

DCR4420H65 6500 6500 4420 65.6 2000 500 0.00423 H 170/115/35 120-155

DCR4660H65 6500 6500 4660 69.3 2000 500 0.00423 H 170/115/35 120-155

Up to 8500VDCR2500A83 8300 8300 2502 33.4 2500 500 0.00603 A 148/100/35 74-91

DCR3670H83 8300 8300 3670 90 2000 500 0.004255 H 170/115/1.5 120-155

DCR4570K83 8300 8300 4570 67.92 2000 500 0.003064 K 190/134/35.3 180-220

DCR390J85 8500 8500 387 5.25 1500 200 0.0379 J 57/33.95/35.51 10-13

DCR470G85 8500 8500 467 5.25 1500 200 0.0268 G 58.5/34/27.46 10-13

DCR680N85 8500 8500 677 9.8 1500 200 0.0221 N 73/47/35.51 20-25

DCR750F85 8500 8500 733 9.8 1500 200 0.0184 F 73/47/27.46 20-25

DCR1300L85 8500 8500 1300 17.6 1500 400 0.0117 L 98.9/62.85/35.56 33-41

DCR1840Y85 8500 8500 1840 25 1500 300 0.00835 Y 112.5/73/36.09 48-59

DCR1910V85 8500 8500 1910 25 1500 300 0.00746 V

DCR2400B85 8500 8500 2370 32.5 1500 300 0.007 B 110/73/28.31 48-59

DCR2450W85 8500 8500 2450 32.5 1500 300 0.00631 W 120/84.6/35.61 68-84

DCR2560A85 8500 8500 2560 32.5 1500 200 0.00603 A 120/84.6/27.95 68-84

DCR2760M85 8500 8500 2765 32.5 1500 200 0.00518 A 148/100/36.19 74-91

DCR3640H85 8500 8500 3640 54 2000 500 0.00425 H 170/115/35 120-155

DCR3980H85 8500 8500 3980 59.6 2000 500 0.00425 H 170/115/35 120-155

The bypass thyristor range of devices is specially designed for protection of IGBT modules in VSC multi-level applications, where a reduced forward blocking voltage is required. In these applications a thyristor must rapidly divert fault currents from an IGBT diode to protect it from damage. Dynex have designed devices with improved current and surge ratings to assist fault diversion. Such protective thyristors are required to block in parallel with the IGBT diode and as such experience waveforms that are non typical of thyristor applications. They are resistant to fast voltage transients, which they can be exposed to due to the switching of the IGBT diode. The device structures also have greatly enhanced hardness to cosmic ray induced failures which become significant at high duty cycles.

Part Number

VDRM (V)

VRRM (V)

IT (AV) at TC= 80°C

(A)

ITCM (A)

dV/dt(V/µs)

dI/dt(A/µs)

Rth(j-c)(°C/W)

Outline Type Code

Flange OD Contact OD Height (mm)

Snubber Diode Anti-parallel and Freewheel

Diode


Asymmetric Types

Up to 1300V

DGT304SE 1300 16 250 700 500 500 0.075 E 41.9/25/15 - DF451 5-6

DGT304RE 1300 1300 250 700 500 500 0.075 E 41.9/25/15 - DF451 5-6

Up to 1800V

DGT305SE 1800 16 240 700 500 500 0.075 E 41.9/25/15 - DF451 5-6

Up to 2500V

DG306AE 2500 16 225 600 1000 300 0.075 E 41.9/25/15 - DFS454 5-6

DG406BP 2500 16 500 1200 1000 300 0.041 P 56/38/27 DSF8025SE DSF8025SE 11-15

DG646BH 2500 16 867 2500 1000 300 0.018 H 100/63/26.5 DSF8025SE DF051 18-22

Up to 4500V

Reverse Blocking

Part Number

VDRM (V)

VRRM (V IT (AV) at TC= 80°C

(A)

ITCM (A)

dV/dt(V/µs)

Non Rep. dI/

dt(A/µs)

Rth(j-c)(°C/W)

Outline Type Code


DC Cosmic Ray Failure Rate @ 50%

VRRM (FITs)


ACR3200VR33 1000 3300 3200 43 10 1500 0.00746 V 110/73/27.57 9 48-59

ACR2900VR45 1000 4500 2900 39 10 1300 0.00746 V 110/73/27.69 8 48-59

Asymmetric Bypass Thyristors

Gate Turn Off ThyristorsPhase Control Thyristors

DG408BP 4500 16 320 1000 1000 300 0.041 P 56/38/27 DSF8045SK DSF8045SK 11-15

DG648BH 4500 16 745 2000 1000 300 0.018 H 100/63/26.5 DSF8045SK DSF20545SF 18-22

DG758BX 4500 16 870 3000 1000 300 0.0146 X 112/66/27 DSF8045SK DSF21545SV 33-37

DG808BC 4500 16 780 3000 1000 400 0.014 C 108/77.2/27 DSF8045SK DSF21545SV 28-44

DG858BW 4500 16 1180 4000 1000 300 0.011 W 120/84.6/27.7 DSF8045SK DSF21545SV 36-44

DG858DW 4500 16 1100 3000 750 300 0.011 W 120/84.6/27.7 DSF8045SK DSF21545SV 36-44


Housing lid

Molybdenum washer

Device housing

Thyristor unit

Thyristor insulation

Molybdenum disc

PTFE locator ring

Housing lid

Pulsed Power Thyristors

Part Number

VDRM (V)

VRRM (V

IT (AV) at TC= 80°C

(A)

ITSM at Tvj VR = 0

(kA)

dV/dt(V/µs)

dI/dt(A/µs)

to Ipk(kA)

Rth(j-c)(°C/W)

Outline Type Code



Pulsed Power Thyristors (SCR)

ACR300SG33 3300 20 493 6.5 3000 2000 0.125 0.042 G 58.5/34/27 6-8

PT40QPX45 4500 16 760 13 200 5000 20 0.033 P 56/38/37 11-15

PT60QHX45 4500 16 1000 22.5 175 10000 40 0.013 H 100/63/26.5 18-22

PT85QWX45 4500 16 1670 37 200 22000 90 0.01 W 120/84.6/27.7 36-44

The PT family of Pulsed Power Thyristors (PPTs) is based on Dynex’s GTO technology and is designed for long term stability under DC voltages. The structures are resistant to cosmic ray induced failures at normal working voltages. Dynex’s Pulsed Power Thyristors may be used to connect a source of stored energy such as a capacitor to a load, or to bypass and protect the load in the case of a crowbar circuit. In these pulsed power applications where the rate of rise of current is very fast, the pulsed power switch is acting as a closing switch and ordinary phase control thyristors (SCRs) are likely to fail due to the high di/dt experienced.

Pulsed Power Thyristors may also be required to act in the opening switch mode. Such applications may include those where voltage is reapplied to the pulsed power switch shortly after closing and the switch needs to have recovered blocking capability or the transferred energy needs to be controlled. In these applications, the switch needs to have turn-off capability to reduce the natural turn-off time (tq) of the device. The device is operated in GTO mode with the appropriate commutating gate drive. Dynex has been supplying thyristors used as crowbars to protect other high power circuitry in railway propulsion units and the like for many years. In addition, Dynex has been a supplier of devices used in equipment for the sterilisation of foods by intense light or x-rays since the late 1980s. These applications operate at moderate di/dts and can be satisfied with conventional thyristor solutions.

In the field of ignitron replacements and weld switches, Dynex has been a world leader in the application of solid state devices. Dynex has been involved in the design and manufacture of assemblies for the pulsed power communities on the West Coast of America and at CERN, Switzerland.

For more information on how Dynex can help with your pulsed power needs, please e-mail us at [email protected]

Note: 1. Please contact customer services for the availability of clamps for these devices.

Thyristor ComponentsTake a look at the components that make up our encapsulated device. The devices are fully floating and therefore are not bonded together and are clamped together to achieve electrical and thermal contact instead. This allows our products to have an excellent temperature cycling life expectancy.


Reliable and efficient transfer of energy for a range of applications

Diodes

APPLICATIONSRotating exciters for power generatorsProtect superconducting magnetsWind energy systemsFreewheeling & clamping circuitsFlexible AC transmission systemsIndustrial AC and DC drivesSoft starters, STATS

The Diode range consists of Rectifier Diodes, Fast Recovery Diodes and Flat base Rectifier Diodes

The Dynex Semiconductor range of Fast Recovery Diodes are designed as snubber and anti-parallel diodes for use with its GTO.

The Rectifier Diodes are rugged converters of AC to DC finding use in industrial, chemical rectifiers and aluminium pot lines.

The Flat Base Rectifier Diodes are rugged converters of AC to DC for the refurbishment of industrial and chemical rectifiers and aluminium pot lines.


World-Class and Robust

Diodes

Voltage Ratings from 1400V to 9000VHigh Overload CapabilityLow Losses for High EfficiencyHermetically Sealed for Longer Operational LifeLow Thermal ResistanceDouble Side Cooling

Rectifier, Fast Recovery & Flat Base Rectifier Diodes

Part Number

VRRM (V)

IF (AV) at TC = 100°

(A)

IFSM at TvjVR=0 (kA)

I2t at Tvj VR = 0 (MA2s)

Rth(j-c)(°C/W)

IFM (A) VFM@ IFM & Tc= 25ºC (V)

Outline Type Code


(mm)


Up to 1400V

DRD520T14 1400 520 5.9 0.17 0.08 800 1.45 T 42/19/13.5 4-6

DRD710T14 1400 710 8.0 0.3 0.07 600 1.20 T 42/19/15 3.5-5

DRD1360D14 1400 1360 15.2 1.16 0.035 1500 1.3 D 47/29/14.5 8-12

DRD1510G14 1400 1510 16.8 1.41 0.035 1500 1.2 G 58/34/26.5 12-18

DRD2770F14 1400 2770 31 4.81 0.02 1500 1.05 F 75/47/26.5 18-26

DRD3220X14 1400 3220 35.8 6.41 0.018 3000 1.15 X 85/53/26.5 26-34

DRD4650C14 1400 4650 45 10.13 0.0125 3000 1.05 C 100/63/26.5 40-50

DRD6080V14 1400 6080 60 18.00 0.01 3000 1.05 V 110/73/26.5 50-62

Up to 2800V

DRD4890L15 1500 4890 57.0 16.2 0.013 3000 1.05 L 102/63/32.5 40-48

DRD2460F18 1800 2460 41.3 8.5 0.022 3400 1.18 F 76/48/26.5 18-22

DRD5460Y20 2000 5460 100.0 50.0 0.0095 3000 1.00 Y 112/73/36.8 38-47

DRD410T22 2200 410 4.9 0.12 0.08 800 1.85 T 42/19/13.5 4-6

DRD990D22 2200 990 12.5 0.78 0.035 1500 1.60 D 47/29/14.5 8-12

DRD1100G22 2200 1100 13.9 0.966 0.035 1500 1.45 G 58/34/26.5 12-18

DRD2030F22 2200 2030 25.7 3.30 0.02 1500 1.20 F 75/47/26.5 18-26

DRD2360X22 2200 2360 29.8 4.44 0.018 3000 1.35 X 85/53/26.5 26-34

DRD3430C22 2200 3430 42.2 8.9 0.0125 3000 1.20 C 100/63/26.5 40-50

DRD4460V22 2200 4460 56.4 15.90 0.01 3000 1.15 V 110/73/26.5 50-62

DRD6380W22 2200 6380 78 30.42 0.007 6000 1.09 W 120/84/26.5 62-78

DRD6800A22 2200 6800 94 44.18 0.0057 6000 1.03 A 150/100/35 80-100

DRD8880H22 2200 8880 125 78.13 0.004 6000 0.98 H 172/110/35 110-130

DRD2880L25 2500 2880 32.0 5.1 0.013 1500 1.05 L 102/63/32.5 40-48

DRD4780Y26 2600 4784 81.0 33.0 0.0095 3000 1.05 Y 112/73/36.8 38-47

DRD1960F28 2800 1960 31.3 4.9 0.022 3400 1.30 F 76/48/26.5 18-22

DRD6990M28 2800 6992 95.0 45.1 0.00558 3000 0.97 M 148/100/26 75-91

DRD1320G28 2800 1315 20.0 2.0 0.032 1800 1.30 G 58.5/34/26 11.5-13.5

Up to 3400V

DRD850D34 3400 850 10.8 0.583 0.035 1500 1.95 D 47/29/14.5 8-12

DRD960G34 3400 960 12 0.72 0.035 1500 1.7 G 58/34/26.5 12-18

DRD1830F34 3400 1830 23 2.65 0.02 1500 1.35 F 75/47/26.5 18-26

DRD2050X34 3400 2050 25.8 3.33 0.018 3000 1.55 X 85/53/26.5 26-34

DRD2980C34 3400 2980 36.5 6.66 0.0125 3000 1.35 C 100/63/26.5 40-50

DRD3920V34 3400 3920 49.5 12.25 0.01 3000 1.25 V 110/73/26.5 50-62

DRD5240W34 3400 5240 64.2 20.61 0.007 6000 1.29 W 120/84/26.5 62-78

DRD6140A34 3400 6140 84.4 35.62 0.0057 6000 1.1 A 150/100/35 80-100

DRD7810H34 3400 7810 118 69.62 0.004 6000 1.1 H 172/110/35 110-130

Up to 4000V

DRD870G40 4000 870 15 1.13 0.032 1800 1.6 G 58.5/34/27 11.5-13.5

DRD1230F40 4000 1225 25 3.13 0.022 3400 1.6 F 76/48/27 18-22

DRD2960Y40 4000 2960 62.5 19.53 0.0095 3000 1.25 Y 112.5/73/37.7 38-47

DRD3390V40 4000 3388 62.5 19.53 0.0075 3000 1.25 V 112.5/73/27 38-47

DRD4350A40 4000 4350 83 34.50 0.007 3000 1.06 A 150/100/35 75-91

Up to 4400V

DRA170E44 4400 170 1.5 0.01 0.115 300 2.1 E 42/25/15 2.5-3.8

Rectifier Diodes

Part Number

VRRM (V)


(A)



Rth(j-c)(°C/W)


Outline Type Code


(mm)


Up to 1400V

DRD520T14 1400 520 5.9 0.17 0.08 800 1.45 T 42/19/13.5 4-6

DRD710T14 1400 710 8.0 0.3 0.07 600 1.20 T 42/19/15 3.5-5

DRD1360D14 1400 1360 15.2 1.16 0.035 1500 1.3 D 47/29/14.5 8-12

DRD1510G14 1400 1510 16.8 1.41 0.035 1500 1.2 G 58/34/26.5 12-18

DRD2770F14 1400 2770 31 4.81 0.02 1500 1.05 F 75/47/26.5 18-26

DRD3220X14 1400 3220 35.8 6.41 0.018 3000 1.15 X 85/53/26.5 26-34

DRD4650C14 1400 4650 45 10.13 0.0125 3000 1.05 C 100/63/26.5 40-50

DRD6080V14 1400 6080 60 18.00 0.01 3000 1.05 V 110/73/26.5 50-62

Up to 2800V

DRD4890L15 1500 4890 57.0 16.2 0.013 3000 1.05 L 102/63/32.5 40-48

DRD2460F18 1800 2460 41.3 8.5 0.022 3400 1.18 F 76/48/26.5 18-22

DRD5460Y20 2000 5460 100.0 50.0 0.0095 3000 1.00 Y 112/73/36.8 38-47

DRD410T22 2200 410 4.9 0.12 0.08 800 1.85 T 42/19/13.5 4-6

DRD990D22 2200 990 12.5 0.78 0.035 1500 1.60 D 47/29/14.5 8-12

DRD1100G22 2200 1100 13.9 0.966 0.035 1500 1.45 G 58/34/26.5 12-18

DRD2030F22 2200 2030 25.7 3.30 0.02 1500 1.20 F 75/47/26.5 18-26

DRD2360X22 2200 2360 29.8 4.44 0.018 3000 1.35 X 85/53/26.5 26-34

DRD3430C22 2200 3430 42.2 8.9 0.0125 3000 1.20 C 100/63/26.5 40-50

DRD4460V22 2200 4460 56.4 15.90 0.01 3000 1.15 V 110/73/26.5 50-62

DRD6380W22 2200 6380 78 30.42 0.007 6000 1.09 W 120/84/26.5 62-78

DRD6800A22 2200 6800 94 44.18 0.0057 6000 1.03 A 150/100/35 80-100

DRD8880H22 2200 8880 125 78.13 0.004 6000 0.98 H 172/110/35 110-130

DRD2880L25 2500 2880 32.0 5.1 0.013 1500 1.05 L 102/63/32.5 40-48

DRD4780Y26 2600 4784 81.0 33.0 0.0095 3000 1.05 Y 112/73/36.8 38-47

DRD1960F28 2800 1960 31.3 4.9 0.022 3400 1.30 F 76/48/26.5 18-22

DRD6990M28 2800 6992 95.0 45.1 0.00558 3000 0.97 M 148/100/26 75-91

DRD1320G28 2800 1315 20.0 2.0 0.032 1800 1.30 G 58.5/34/26 11.5-13.5

Up to 3400V

DRD850D34 3400 850 10.8 0.583 0.035 1500 1.95 D 47/29/14.5 8-12

DRD960G34 3400 960 12 0.72 0.035 1500 1.7 G 58/34/26.5 12-18

DRD1830F34 3400 1830 23 2.65 0.02 1500 1.35 F 75/47/26.5 18-26

DRD2050X34 3400 2050 25.8 3.33 0.018 3000 1.55 X 85/53/26.5 26-34

DRD2980C34 3400 2980 36.5 6.66 0.0125 3000 1.35 C 100/63/26.5 40-50

DRD3920V34 3400 3920 49.5 12.25 0.01 3000 1.25 V 110/73/26.5 50-62

DRD5240W34 3400 5240 64.2 20.61 0.007 6000 1.29 W 120/84/26.5 62-78

DRD6140A34 3400 6140 84.4 35.62 0.0057 6000 1.1 A 150/100/35 80-100

DRD7810H34 3400 7810 118 69.62 0.004 6000 1.1 H 172/110/35 110-130

Up to 4000V

DRD870G40 4000 870 15 1.13 0.032 1800 1.6 G 58.5/34/27 11.5-13.5

DRD1230F40 4000 1225 25 3.13 0.022 3400 1.6 F 76/48/27 18-22

DRD2960Y40 4000 2960 62.5 19.53 0.0095 3000 1.25 Y 112.5/73/37.7 38-47

DRD3390V40 4000 3388 62.5 19.53 0.0075 3000 1.25 V 112.5/73/27 38-47

DRD4350A40 4000 4350 83 34.50 0.007 3000 1.06 A 150/100/35 75-91

Up to 4400V

DRA170E44 4400 170 1.5 0.01 0.115 300 2.1 E 42/25/15 2.5-3.8


Part Number

VRRM (V)


(A)



Rth(j-c)(°C/W)


Outline Type Code


(mm)


Up to 4500V

DRD2000L45 4500 2000 31 3.075 0.013 3000 1.4 L 102/63/32.9 40-48

DRD6290H45 4500 6290 99.4 49.4 0.004 6000 1.19 H 172/110/35 110-130

Up to 4800V

DRD1100F48 4800 1105 20.5 2.13 0.022 3400 1.8 F 76/48/27 18-22

Up to 5000V

DRD710G50 5000 710 11.5 0.66 0.032 1800 1.8 G 58.5/34/ 27 11.5-13.5

DRD2690Y50 5000 2691 55 15.12 0.0095 3000 1.21 Y 112.5/73/37.7 38-47

DRD3080V50 5000 3083 55 15.12 0.0075 3000 1.21 V 112.5/73/27 38-47

5200V +

DRD3770A52 5200 3768 70 24.50 0.0065 3000 1.17 A 148/100 /35.0 75-91

DRD6010H52 5200 6015 111 39.6 0.0093 - - H 172/110/35 120-155

DRD5940H55 5500 5940 93.60 43.8 0.004 6000 1.26 H 172/110/36 110-130

DRD630G60 6000 630 10.5 0.555 0.032 1800 2.1 G 58.5/34/27 11.5-13.5

DRD1010F60 6000 1015 16.5 1.425 0.022 3400 2.1 F 76/48/27 18-22

DRD5150H65 6500 5150 82.5 34 0.004 6000 1.65 H 172/110/36 110-130

DRD4950H72 7200 4950 79 31.2 0.004 6000 1.71 H 172/110/36 110-130

DRD4690H85 8500 4690 74.5 27.75 0.004 6000 1.31 H 172/110/36 110-130

DRD560G90 9000 557 10 0.5 0.032 1200 2.08 G 58/34/26.5 11-13

Part Number

VRRM (V) IT (AV) at TC= 65°C

(A)

IFSM at Tvj VR=0 (kA)


IFM(A)

VF(V)

Qr(µC)

trr(µs)

Outline Type Code


(mm)


Up to 1400V

DF451 1600 295 3.5 0.061 600 2.65 25 1.22 T 42/19/15 4.5-5.5

Up to 2500V

DSF8025SE 2500 650 7.5 0.281 1000 2.3 540 5 E 42/25/15 7-9

DF051 2500 1490 14 0.98 1500 1.85 800 5 F 75/47/27 21-25

Up to 4500V

DSF8045SK 4500 430 3.5 0.061 1000 4 440 3.07 K 42/25/27 7-9

DSF20545SF 4500 1250 16 1.28 1800 2.1 1250 7 F 75/47/27 17.5-21.5

DSF21545SV 4500 3200 20 2 3000 2 1800 7 V 112.5/73/27 34-48

Up to 6000V

DSF11060SG 6000 400 4.2 0.09 600 3.8 700 6 G 58/35/27 10.8-13.2

Part Number

VRRM (V)


(A)



Rth(j-c)(°C/W)


Outline Type Code


S1104SXU30 3000 860 16 1.28 0.065 1800 1.225 S 0-22

S1107SXU40 4000 570 12 0.72 0.65 1800 1.55 S 0-22

S1109SXU50 5000 470 9.2 0.441 0.65 1800 2.1 S 0-22

S1112SXU60 6000 412 8.5 0.361 0.65 1800 2.6 S 0-22

Fast Recovery Diodes

Rectifier DiodesThe Dynex Semiconductor range of Rectifier Diodes are rugged converters of AC to DC finding use in industrial, chemical rectifiers and aluminium pot lines.

Features

• Current ratings from 410A average to 8800A average• Voltage ratings from 1400V to 8500V• High overload capability• Low losses for high efficiency• Hermetically sealed for long operational life• Low thermal resistance

Fast Recovery DiodesThe Dynex Semiconductor range of Fast Recovery Diodes was designed to be used as snubber and anti-parallel diodes for use with its GTO.

Features

• Lifetime controlled for fast recovery, low recovery charge• Low transient turn-on voltage• High surge capability• Double side cooling

Flat Base Rectifier DiodesThe Dynex Semiconductor range of Flat Base Rectifier Diodes are rugged converters of AC to DC for the refurbishment of industrial and chemical rectifiers and aluminium pot lines.

Features

• Current ratings of 470A average to 860A average• Voltage ratings of 3kV to 4.8kV• Low losses for high efficiency• Hermetically sealed for long operational life• Easily mounted down with M8 bolts on 46mm centres• Available anode to base and cathode to base• Selections available for parallel operation

Rectifier Diodes Flat Base Rectifier Diodes


Foundry Services

With a wealth of experience in the design and manufacture of IGBT die and Bipolar wafers, Dynex has the capability to provide world class components to Semiconductor module companies, with a speciality in IGBT die in the range of 1.2kV to 6.5kV.

Dynex offers to the market a broad range of established, proven, Trench Gate and DMOS die that form the basis of Dynex’s own high-quality IGBT modules. This Foundry service has been provided to the market for a long time and has recently been opened up to a wider audience.

In addition, with its in-house chip design team, Dynex can customise die to specific customer requirements. This coupled with full technical support, world-class design capability, and rapid response to customer needs, shows that Dynex is truly differentiated in the foundry services arena.

At the same time, Dynex has refined the wafer fabrication processes to achieve benchmark levels of quality, reliability and yields, offering the benefits to the wider market.

Key Benefits:• Robust process

• Decades of experience

• Broad range of capabilities

• In-house chip design team

• Customisable to suit requirements

• Refined wafer fabrication processes

We are pleased to be offering this technology and process robustness and the benefits it brings to the wider semiconductor market

For further information please contact the Foundry Services team at:

[email protected]

Dynex Semiconductor Ltd, Doddington Road, Lincoln LN6 3LF, United Kingdom

Tel: +44(0)1522 500500

Foundry Services


Explanation of Part Numbers

High Power IGBT & FRD ModulesExample Part Number: DFM800DDM18-A000

D Dynex Semiconductor Identifier

I/F I = IGBT / F = FRD

M Module Generic Identifier

800 IC Current Rating

D/X/A/S/M Package Outline/Power Terminal layout

D/S/C Circuit configuration

S/M Base plate technology S=Copper/M=Metal Matrix

18 Voltage rating divided by 100

(-)

A/TS/TF/TL Silicon Technology Identifier

US/UF/UL

MS/MF/ML

0 Special Selection Number (defaults to 000 for standard product)

*See page 37, 38, 39 for Package outlines

Phase Control ThyristorsExample Part Number: DCR2630Y52-1234


CR Controlled Rectifier (Thyristor)

2630 Average current rating at 60°C case temperature

Y Case Outline

52 Vdrm, Vrrm/100

-1234 Special Selection Number

*See page 40 for Package outlines

Rectifier DiodesExample Part Number: DRD2690Y50-1234


RD Rectifier Diode


Y Case Outline

50 Vrrm/100



Gate Turn-off ThyristorsExample Part Number: DGT304SE13-123


G GTO

T Optional indicates reverse blocking

30 Pellet size code

4 Factory code

S Iteration A,B,C etc

E Case Outline

13 Vdrm



Asymmetric ThyristorsExample Part Number: ACR2900VR45-1234

A Asymmetric

CR Controlled Rectifier (Thyristor)


V Case Outline

R/F Reverse/Forward Blocking type

45 Vrrm /100 or Vdrm /100



Explanation of Part Numbers

35For further information and datasheets visit www.dynexsemi.com34 Any questions? Email [email protected] 34

Module Outlines and Circuit ConfigurationsAll dimensions shown in mm unless stated otherwise.

Notes:1. Mounting recommendations are given in the application note AN4505 ‘Heatsink Issues For IGBT Modules’ available from our website.

Package Outlines

Package Type: D Nominal weight: 1000g/1600g Nominal weight: 1700g

140

38

130

13

2412

11

10

7

6

5

124

57

3(C1)

5(E1)

6(G1)

7(C1)

1(E1)

4(E2)

2(C2)

3(C1)

5(E1)

6(G1)

7(C1) 10(E2)

12(C2)

11(G2)

1(E1)

4(E2)

2(C2)

C1 and C2 - Aux CollectorE1 and E2 - Aux EmitterG1 and G2 - Gate

Single Switch - ESM

7(C)9(C)3(C)

2(G)

1(E) 8(E) 6(E) 4(E)

External connection

External connection

5(C)

3 - Aux Collector2 - Gate1 - Aux Emitter

Package Type: E

140

38190

124

8 976

54

13

2

Dual Switch - DDM/S

Chopper switch - DCM/S

Package Type: F Nominal weight: 1000g/1600g Nominal weight: 1000g

Single Switch - NSM

Chopper High Side - PKM

Chopper Low Side - PLM

Package Type: N

Package Type: P Package Type: P

Single Switch - FSM/S

140

38

130

13

24

78

9

124

57

2(C2)1(C1)7(C1)

9(G1)

8(E1) 3(E1) 4(E2)

External connection

External connection

C1 - Aux CollectorE1 - Aux EmitterG1 - Gate

2(C2)4(C1)C1

G

E1 3(E1) 1(E2)

External connection

External connection

C1 - Aux CollectorE1 - Aux EmitterG - Gate

140

38

130

43

21

G

E1

C1

124

57

Bi-directional Switch - PBM

3(C2)2(C1)1(E1/E2)

5(E1) 7(E2)4(G1)

6(G2)

C1 - Aux CollectorE1 and E2 - Aux EmitterG1 and G2 - Gate

Half Bridge - PHM

3(E2)2(C1)1(E1C2)

8(C1) 5(C2/E1) 7(E2)4(G1)

6(G2)C1 - Aux CollectorE1 and E2 - Aux EmitterG1 and G2 - Gate

140

3873

1238

45

67

124

57

140124

73

1 2 345

768

38

26.2

26.238

Nominal weight: 500gNominal weight: 500/750g

8(C2) 6(G2)7(E 2)

3(E2)

1(A/C2)

2(K)

3(A)2(C1)

1(E1/K)

5(E1) 4(G1) 8(C1)

Package Outlines - IGBT Modules


Package Type: E Nominal weight: 1700g Nominal weight: 1100gPackage Type: X

Package Type: F Nominal weight: 1000g/1600g Nominal weight: 1000gPackage Type: N

Package Type: P Nominal weight: 500g

C3(K3)C1(K1)

E1(A1) E3(A3)

External connection

External connection

C2(K2)

E2(A2)

External connection for singlediode application

C3(K3)C1(K1)

E1(A1) E3(A3)

External connection

External connection

C2(K2)

E2(A2)


140

38190

124

8 976

54

13

2

Dual Diode - XXM

5(K2)7(K1)

6(A1) 4(A2)

External connection

External connection


7

54

6

3

12

140

48

130

124

57

Dual Diode - FXM/S

2(K2)1(K1)

3(A1) 4(A2)

External connection

External connection


140

38

130

13

24

124

57

Dual Diode - NXM

2(K2)4(K1)

3(A1) 1(A2)

External connection

External connection


140

38

130

43

21

124

57

Series Diode - PXM

1(K2/A1)2(A2) 3(K1)

140

3873

123

124

57

Triple Diode - EXM




Package Type: A

Package Type: G Nominal weight: 1000g

Nominal weight: 1700g

Nominal weight: 1100gPackage Type: X

Dual Switch - GDM

3 (C1)

7 (E1)

6 (G1)

5 (C1)

1 (E1)

4 (A)

2 (K)

13

24

5

8

9

6

7

10

13038

160140

124

57

Chopper Switch - GCM


3(C1)

7(E1)

6(G1)

5(C1) 8(E2)

10(C2)

9(G2)

1(E1)

4(E2)

2(C2)


Single Switch - XSM

5(C2)7(C1) 3(Aux C)

2(G)

1(Aux E) 6(E1) 4(E2)

External connection

External connection

Chopper Switch - XCM

2(G)

3(Aux C)

5 (A)

4 (K)

7(C1)

1(Aux. E)

7

54

6

3

12

14048

130

124

57

6 (E1)

140 ± 0.5

38 ± 0.5190 ± 0.5

8 9

6

7

4 5

32

1

Single Switch - ASM

External connection

External connection

3(C)2(G)

1(E)

5(C) 7(C)

4(E) 6(E)

9(C)

8(E)

Chopper Switch - ACM

3 - Aux Collector2 - Gate1 - Aux Emitter

External connection

External connection

3(C)2(G)

1(E)

7(C) 9(C)

6(E) 8(E)

5(A)

4(C)


Package Outlines - IGBT Modules Package Outlines - FRD Modules


Thyristor and Diode Outlines

Outline Flange (A) [mm]Max*

Pole (B) [mm]Nominal*

Depth (D) [mm]Maximium

Weight(kg)

A 148 & 150 100 37 2.6

B 120 85 36 1.5

C 99 & 102 63 28 0.8

D 47 29 15 0.24

E 42 25 15 0.082

F 73 & 75 47 28 0.433

G 57 & 58 35 28 0.25

H 172 110 36 3.5

J 57 & 58 34 36 0.322

K 42 25 27 0.16

L 99 & 100 & 102 63 36 1.05

M 148 & 150 100 27 1.95

N 73 & 75 47 36 0.48

T 42 19 15 0.055

V 110 & 112 73 29 1.1

W 120 84 29 1.55

X 85 53 27 0.6

Y 112 & 120 73 & 78 36 1.45

Notes:*The character ‘&’ denotes we manufacture products in a generic outline, some of which have one flange/contact diameter and others that have a slightly different flange/contact diameter. There is no choice of flange/contact diameter for a specific device.

For detailed dimensions, see datasheet on www.dynexsemi.com

ØA MAX

ØB NOM

D M

AX

GTO Outlines

Outline Flange/Max OD(A) [mm]

Pole(B) [mm]

Depth(D) [mm]

Weight(kg)

C 108 77 27 1.4

E 42 25 15 0.082

CA 56 38 36 0.46

H 100 63 27 0.82

P 56 38 27 0.35

W 120 85 27 1.7

v 85 53 27 1.2

For detailed dimensions, see datasheet on www.dynexsemi.com

ØA MAX

ØB NOM

D M

AX

Package Outlines - Thyristor & Diodes Package Outlines - GTO

4140 Any questions? Email [email protected] For further information and datasheets visit www.dynexsemi.com

CS Snubber capacitance

dI/dt Critical rate of rise of on-state/forward current

dIFG/dt Rate of rise of positive gate current

dIGQ/dt Rate of rise of reverse gate current (GTO)

dIT/dt Critical rate of rise of on-state current (GTO)

dsc Double side cooled

dV/dt Critical rate of rise of off-state voltage

dIVD/dt Rate of rise of off-state voltage (GTO)

EOFF Turn-off energy loss

Erec Reverse recovery energy

Esw(TOT) Total switching energy

Fm/F Clamping force/mounting torque

I²t I²t value

IC Collector current

IC(PK) Peak collector current

IDRM On-state leakage current (thyristor)

IF Forward current (diode)

IF(AV) Mean forward current (diode)

IFM Peak forward current (diode)

IF(RMS) RMS forward current (diode)

IFSM Single cycle surge current (diode), (10ms half sinewave)

IG(ON) Gate turn-on current (GTO)

IGT Gate trigger current

IRMS RMS line current

IPK Peak current

IRRM Peak reverse recovery current

IT(RMS) RMS on-state current (thyristor)

IT/ITM On-state current

IT(AV) Mean on-state current (thyristor)

ITCM Maximum repetitive controllable current (GTO)

ITSM Single cycle surge current (thyristor), (10ms half sinewave)

PG Gate power dissipation

PG(AV) Mean gate power dissipation

PGM Peak gate power dissipation

Qr Recovered charge

Qrr Reverse recovery charge

rT On-state/forward slope resistance

Rth(c-hs) Thermal resistance – case to heatsink

Rth(j-c) Thermal resistance – junction to case

Rth(j-hs) Thermal resistance – junction to heatsink

Rth(j-w) Thermal resistance – junction to water

Tc Case temperature

tgq Gate controlled turn-off time

tq Turn-off time

trr Reverse recovery time

THS Heatsink temperature

Tvj Virtual junction temperature

Tvjm Maximum virtual junction temperature

Twater Water temperature

VCE(sat) Collector-emitter saturation voltage (IGBT)

VCES Collector-emitter voltage (IGBT)

VDRM Repetitive peak off-state voltage

VDSM Non-repetitive peak off-state voltage

VF Forward voltage (diode)

VFM Peak forward voltage (diode)

Visol Isolation voltage

VGT Gate trigger voltage

VR Reverse voltage

VRRM Repetitive peak reverse voltage

VRSM Non-repetitive peak reverse voltage

VT On-state voltage

VTM Peak on-state voltage

VTO Threshold voltage (diode)

VT(TO) Threshold voltage (thyristor)

Symbols and Definitions

43For further information and datasheets visit www.dynexsemi.com42 Any questions? Email [email protected] 43

45

The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact our Customer Service team. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind.

This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in medical or other applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property.

Product Status and Product Ordering:

We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:

Target Information:

This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.

Preliminary Information:

The product design is complete and final characterisation for volume production is in progress. The datasheet represents the product as it is now understood but details may change.

No Annotation:

The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement.

All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.

Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

Warning Counterfeit Products:

There are counterfeit products on the semiconductor marketplace. Unfortunately, many of these products will have markings and labels that closely resemble those from Dynex’s genuine products, making it difficult to realise the difference. Dynex has extensive, proven controls to ensure its products are properly manufactured, tested, handled, and stored to prevent failures. Counterfeit products will not have been subjected to these processes. Therefore, Dynex does not warrant any parts purchased through unauthorised channels nor do we accept any liability for failure of counterfeit products.

Dynex’s Advice to customer is as follows:

Only purchase from Dynex directly or from one of Dynex’s authorised distributors. Our Customer Services team can advise you whether a distributor is authorised via the details below.

Dynex products should not be purchased if the outer appearance differs from Dynex products you normally receive unless Dynex or a Dynex authorised distributor has provided you with a product change notification or can be seen on datasheets from the Dynex Website. We strongly advise against purchasing extraordinarily low priced Dynex products from unauthorised distributors. Dynex does not support the sale of Dynex products via online auction houses. We will be pleased to confirm the authenticity of the products. To do so please contact Dynex’s Customer Services (see reverse for contact information ) with the following information:

• Part number, quantity purchased, unit cost

• Name and contact name of the supplier with address, phone, and web/e-mail addresses

• Digital photos of inner and outer label, inner and outer packaging, and front and back of product

• Copy of purchase order and invoice

This is intended to provide you with additional information on counterfeiting and steps that can be taken to better recognize counterfeit products.

www.dynexsemi.com

[email protected]

Important Information

45For further information and datasheets visit www.dynexsemi.comAny questions? Email [email protected] 44

Designed by w

ww

.optimadesign.co.uk

Dynex Semiconductor LtdDoddington RoadLincoln LN6 3LFUnited Kingdom

Email: [email protected] switchboard: +44 (0)1522 500 500Sales & Marketing: +44(0)1522 502 901

www.dynexsemi.com

@Dynexpower Dynex Semiconductor Ltd DYN-PS-19001

Documents

Power Semiconductor Product Guide 2019