Power Modules to the Rescue · to market researcher IHS, the global power semiconductor market (discretes and modules) in 2013 was valued at more than $15 billion. In 2012 International

DC/DC POWER MODULESPower Modules to the Rescue

ISSUE 8 – December 2014 www.power-mag.com

Also inside this issueOpinion | Market News | Electronica 2014 | Industry NewsSolar Power | Power Diodes | Power Semiconductor Testing Motion Control | Products | Website Locator

01_PEE_0814_p01 Cover 04/12/2014 08:45 Page 1

www.semikron.com/contact

Drives and Power – You’re in Control.

SEMIKRON innovative power electronic products enable

power electronic systems. Our products are at the heart

automation systems. In additional application areas such as power supplies, renewable energy generation and electric utility vehicles, our products set the pace for the reduction of energy consumption worldwide.

MiniSKiiP®

2kW up to 90kW

02_pee_0814_Layout 03/12/2014 15:24 Page 1

CONTENTS

www.power-mag.com Issue 8 2014 Power Electronics Europe

3

Editor Achim ScharfTel: +49 (0)892865 9794Fax: +49 (0)892800 132Email: [email protected]

Production Editor Chris DavisTel: +44 (0)1732 370340

Financial Manager Clare JacksonTel: +44 (0)1732 370340Fax: +44 (0)1732 360034

Reader/Circulation Enquiries Perception-MPS Ltd.Tel: +44 (0) 1825 749900Email: [email protected]

INTERNATIONAL SALES OFFICESMainland Europe: Victoria Hufmann, Norbert HufmannTel: +49 911 9397 643 Fax: +49 911 9397 6459Email: [email protected]

Armin Wezelphone: +49 (0)30 52689192mobile: +49 (0)172 767 8499Email: [email protected]

Eastern US Karen C Smith-Kerncemail: [email protected] US and CanadaAlan A KerncTel: +1 717 397 7100Fax: +1 717 397 7800email: [email protected]

Italy Ferruccio SilveraTel: +39 022 846 716 Email: [email protected]

Japan:Yoshinori Ikeda, Pacific Business IncTel: 81-(0)3-3661-6138Fax: 81-(0)3-3661-6139Email: [email protected]

TaiwanPrisco Ind. Service Corp.Tel: 886 2 2322 5266 Fax: 886 2 2322 2205

Publisher & UK Sales Ian AtkinsonTel: +44 (0)1732 370340Fax: +44 (0)1732 360034Email: [email protected]

Circulation and subscription: Power ElectronicsEurope is available for the following subscriptioncharges. Power Electronics Europe: annual chargeUK/NI £60, overseas $130, EUR 120; single copiesUK/NI £10, overseas US$32, EUR 25. Contact: DFA Media, 192 The High Street, Tonbridge, Kent TN9 1BE Great Britain. Tel: +44 (0)1732 370340. Fax: +44 (0)1732 360034. Refunds on cancelledsubscriptions will only be provided at the Publisher’sdiscretion, unless specifically guaranteed within theterms of subscription offer.

Editorial information should be sent to The Editor,Power Electronics Europe, PO Box 340131, 80098Munich, Germany.

The contents of Power Electronics Europe aresubject to reproduction in information storage andretrieval systems. All rights reserved. No part of thispublication may be reproduced in any form or by anymeans, electronic or mechanical includingphotocopying, recording or any information storageor retrieval system without the express prior writtenconsent of the publisher.

Printed by: Garnett Dickinson.

ISSN 1748-3530

PAGE 10

Electronica 2014

PAGE 16

Industry News

PAGE 22

Finding True Maximum Power PointIn solar power systems, the bulk of the expense is in the panel and batteries. Anycost-effective solar power solution maximizes the capacity usage and lifetime ofthese components. For instance, a high quality charger increases battery run time,reducing capacity requirements, and extends battery lifetime, minimizingmaintenance and replacement costs. Likewise, using a DC/DC controller thatextracts the maximum available energy from the solar panel reduces the size andcost of the panels required. Tage Bjorklund, Senior Applications Engineer,Power Products, Linear Technology Corp., USA

PAGE 24

Defining Schottky Diodes basedon Power DissipationAs wireless devices grow more sophisticated and consumers demand longerbattery lives, manufacturers need to save power wherever possible. One areawhere a large amount of power is consumed is in the LED backlight for LCDdisplays. To drive these LEDs a boost circuit is implemented to increase thebattery voltage to a level large enough to overcome the forward voltage of theLEDs. Choosing the correct Schottky diode for this boost circuit can help reducethe overall power dissipation of the system. For this reason, defining Schottkydiodes based on overall power dissipation rather than individual parameters of thedevice is a preferable approach. Steven Shackell, ON Semiconductor,Phoenix, USA

PAGE 26

Challenges of Wide BandgapPower Semiconductor TestingDevices based on Silicon Carbide (SiC) and Gallium Nitride (GaN) can switch atmuch higher frequencies and also have far lower leakage than Silicon, so at thesame time as there is a need for sourcing higher voltages in testing, there is also aneed for greater current measurement sensitivity. It can be quite challenging tocharacterize these new devices at very low levels of current. DC instrumentationmust be capable of characterizing significantly higher rated voltages and peakcurrents than ever before while providing the measurement resolution andaccuracy characterizing these new materials demands. Mark A.Cejer, Marketing Director, Tektronix/Keithley Instruments,Cleveland, USA

PAGE 28

Motor and Resolver IntegratedThe Mosolver is an innovative closed-loop motion actuator which infuses aposition feedback sensor into the magnetic structure of a high pole count AChybrid servo motor. The position sensor coils are placed within the motor structureso as to intercept a portion of the flux used to operate the motor. The ripplecurrent associated with the PWM drive provides the flux variation required toinduce a voltage in the sense coils. When properly sampled, the sensor outputprovides sine and cosine information similar to a resolver, and these signals areavailable even when the motor is stationary. Donald P. Labriola, QuickSilverControls Inc., USA, Edward Hopper, Maccon GmbH, Munich, Germany

PAGE 30

ProductsProduct Update

PAGE 33

Website Product Locator

Power Modules to the RescueThe requirements for higher density boards andreducing system size are driving the need for smallerDC/DC solutions, resulting with the evolution of powermodules. It took many years for the power moduletechnology to arrive to the mass market. In the earlydays, it was very difficult to design power converters. Atthe time, they were entirely designed with discrete andleaded components or taken from a tap off atransformer. The reality was that designing powerconverters was considered a black art. There werevery few experts in this field who had a greatunderstanding of all aspects of power conversion. Thedesign cycles took more than a year because ofmultiple design iterations were needed due to stabilityissues, component failure, or EMI issues caused byhigh di/dt or dv/dt and improper or constrainedlayouts that increased the amount of radiated EMI.Today there are an increasing number of suppliersoffering power modules due to improvement intechnology on many fronts. It is now time to takeadvantage of this new generation of power modules.The process of selecting a DC/DC power module isimportant and designers need to select the bestsolution in terms of value (performance and size)versus cost effectiveness. Full text on page 18.

Cover supplied by Micrel Inc.

COVER STORY

PAGE 6

Market NewsPEE looks at the latest Market News and company

developments

p03 Contents.QXD_p03 Contents 04/12/2014 09:03 Page 3

04_pee_0814_Layout 03/12/2014 15:25 Page 1

OPINION 5


A suitablequote as alead in to

the editorsopinion

Late August Infineon Technologies and International RectifierCorporation announced that they have signed a definitiveagreement under which Infineon will acquire International Rectifierfor $40 per share (a premium of more than 50 percent over theclosing share price in August) in an all-cash transaction valued atapproximately $3 billion. Infineon will fund the transaction usingcash-on-hand and fully underwritten credit facilities of Euro 1.5billion in total. Infineon’s and International Rectifier’s productportfolios are highly complementary, both companies underline.International Rectifier’s expertise in low-power, energy-efficient IGBTsand Intelligent Power Modules, Power MOSFETs and Digital PowerManagement ICs will integrate well with Infineon’s offering in powerdevices and modules. With International Rectifier, Infineon acquiresan advanced manufacturer in Gallium Nitride on Silicon (GaN)based power semiconductors. This combination will accelerate andsolidify Infineon’s position in GaN discretes and GaN systemsolutions, improving its ability to pursue this strategically importanttechnology platform with significant future growth potential. Thetransaction will result in a broad range of products creating acomprehensive provider in the market for Silicon-, Silicon Carbide-and Gallium Nitride-based power devices and ICs. The integration ofInternational Rectifier will generate economies of scale throughoptimization of the combined entity’s operating expense structureand through the acceleration of the ramp-up of Infineon’s 300-millimetre thin wafer manufacturing capability. Infineon will alsohave a much broader and stronger regional scope. InternationalRectifier has a strong presence in the US, the important center ofinnovation especially in the Connected World, and will also help to

improve Infineon’s position in Asia. The increase in exposure to thedistribution channel will allow Infineon to meet the needs of abroader range of customers. According to Oleg Khaykin, currentlyPresident and CEO of International Rectifier, this transaction providessignificant value to our stockholders and opens new strategicopportunities for both our customers and employees. By combiningtwo complementary providers in power management solutions,International Rectifier will benefit from Infineon’s products andtechnologies, manufacturing and operational excellence and greaterR&D scale. End of October the waiting period under the Hart-Scott-Rodino

Antitrust Improvements Act has been expired. Expiration of the HSRAct waiting period satisfies one of the conditions required to finalizethe acquisition. The transaction remains subject to other closingconditions, including the receipt of additional regulatory clearances,and approval of the transaction by International Rectifier Corporationstockholders, the latter has been agreed in November. Since Infineon holds the pole position in power semiconductors

for a couple of years, the acquisition will give them the undisputedleadership with approximately 20 + percent market share. Accordingto market researcher IHS, the global power semiconductor market(discretes and modules) in 2013 was valued at more than $15billion. In 2012 International Rectifier hold the No. 1 position in the$6 billion power MOSFET market, followed by Renesas, Toshiba,Infineon, Fairchild and Vishay. In the $1.04 billion market for discreteIGBTs Infineon hold No. 1, followed by Fuji, Mitsubishi, Fairchild andRenesas. For the IGBT modules ($3 billion) Mitsubishi hold the poleposition, followed by Infineon, Fuji, Semikron and Hitachi. Thus thecombined revenues of both companies will give a push particularlyin power MOSFETs which are well suited to be transferred toInfineon’s 300-mm production lines. Infineon’s revenue in fiscal year (September end) rose to 4.320

billion Euros – an increase of 12 percent. For the whole of the2015 fiscal year, revenue growth of 8 percent is expected.Regarding productivity, Infineon performs much better than the US-based fabs of IR. In particular 300 millimetre wafers translate into30 percent less investment in relation to revenues. But IR, a $1.05billion company, also runs a 200-mm fab in Newport/UK, hereInfineon’s CEO Reinhard Ploss refused to comment on closing orkeeping this activity on occasion of the annual press conference endof November. IR Newport/South Wales focuses on analog andmixed signal markets and currently operates CMOS and powerMOSFET processes. With a cleanroom area of 3,000 m2, the 200-mm fab supports wafers at 0.35 µm feature size. IR alreadyannounced plans to restructure a number of its facilities across theworld and its Newport facility was to be resized – better downsized -in several phases in 2015. Though IR’s production will be continuedbut partially transferred to Infineon’s fabs and the IR’s organizationwill be integrated, the roughly 5,000 IR employees will face a phaseof uncertainty – as Electronica has shown. And on the other hand –one of the major inventors in power semiconductors such as thefirst hexagonal MOSFET (HEXFET) in 1979 or the GaN-based powerdevice platform in 2008 – will disappear while perhaps keeping thewell-known brand. Consolidation or concentration of industry will bethe name of the game in 2015!We will not disappear – though the commercial conditions are not

so favorable. Since this is the final issue in 2014, I wish all ourreaders a very merry Christmas and a good jump into 2015.

Achim ScharfPEE Editor

Power SemiconductorsSuperdeal in Final Stage

05_PEE_0814_p05 Opinion 03/12/2014 14:58 Page 5

6 MARKET NEWS

Issue 8 2014 Power Electronics Europe www.power-mag.com

Solar Installations to Rise 20 % in 2014Global PV solar installations will rise to 45.4GW in 2014, with 32 % of this total, or 14.4GW, coming in the fourth quarter, a 20 percentincrease in installations from 37.8 GW in 2013.Driven by strong demand in China and the

United States, the final quarter of the year willagain be the largest in terms of newinstallations. Market researcher IHS predictsthat these two countries alone will account formore than half of all global demand in the final

quarter of 2014. “Following a first half that sawdeclines in several key countries, the global PVsolar market is undergoing a major accelerationin the final quarter of the year,” said AshSharma, senior director of solar research at IHS.“China and the United States will propel globalgrowth. With China installing more than 5 GWand the United States installing 2.3 GW in thefourth quarter of 2014, these two countries willaccount for more than 50 percent of global

installations during this period. The huge finalquarter in China is expected to be only slightlyhigher than what was achieved in the samequarter of 2013—a figure that surprised many inthe industry”. Unless new policy or targets areraised further, IHS predicts China’s annualgrowth to slow to 10 percent in 2015 - but stillsufficient for the country to remain the largestend market globally. But several othercountries achieved strong installations in thefirst half of the year, including the UnitedKingdom and Japan. However, there were alsodeclines in Europe and in countries thattypically undertake more installations towardthe end of the year. This set the stage for amajor rebound in installations during thesecond half of the year. However, Germany andItaly will see another year of market declinewith only 2.1 GW and 0.8 GW of newinstallations in 2014, respectively, down from3.3 GW and 1.7 GW in 2013.

www.ihs.com

Global PV installations in 2014 Source: IHS

The $65 billion inverter market by 2020 will be driven by multipleapplications - electrification trends in transportation, the need forpower conversion optimization for CO2 emission reduction, and thedevelopment of clean electricity sources. Such strong and sustainabledrivers will make the inverter market grow.

“The largest markets in 2020 will be represented by motor drives,UPS, and PV”, explains Yole’s analyst Pierric Gueguen. “The strongestmarket growth will be featured by EV/HEV, with 18.3 % CAGR between2013 and wind and UPS markets remaining almost flat”. The invertermarket is heavily application dependent. However, there are somecross-market trends, companies with a good position within oneinverter market segment are researching entry into other segments.

Companies like Alstom, ABB, Ingeteam, Siemens, and General

Electric already offer products for two or more inverter segments.Some players have chosen vertical integration to optimize

their internal cost structure better target commodity-like markets,as well as to meet the severe cost requirements of the automotiveindustry. Other players have bet on horizontal integration to offercomplete solutions to customers.

The inverter supply chain is changing to align with new customers’requirements. This was first learned in the PV industry when the firstSiC inverters were introduced several years ago by SMA and REFUsol(now AEI), since then the highest customer priority has changed fromhigh efficiency to low cost. The reshaping of the inverter supply chainis the most pronounced when analyzing the local market drivers andplayers. Chinese players heavily impact the overall market in mostinverter applications.

Understanding the characteristics of a local market is important inidentifying the most promising market sectors and also helps inchoosing the right product mix and the optimal sales strategy.

Companies which can anticipate regional market changes are onthe best path to conquering new markets, and will lose less inweakened markets. China and Japan remain the markets withrelatively difficult access for foreign players, and thus are dominatedby local companies, except for the rail and UPS application markets.Many European and US companies are working to improve theirposition within the huge growth potential markets such as PV, wind,and electric vehicles.

www.yole.fr

Change in Inverter Industry

Overall inverter market 2010-2020 (million units) Source: Yole Développement

Market News_Layout 1 03/12/2014 15:39 Page 6

Melting systems, surface hardening or preheating – Induction heating applications are manifold. ABB’s fast thyristors deliver the performance induction heating applica-tions are asking for.ABB’s family of fast switching thyristors are available with blocking voltages from 1,200 to 3,000 volt, average forward currents from 500 to 2,700 ampere and turn-off times from 8 to 100 microseconds.For more information please contact us or visit our website: www.abb.com/semiconductors

ABB Switzerland Ltd. / ABB s.r.o.www.abb.com/[email protected].: +41 58 586 1419

Fast thyristor. When burning for induction heating solutions.

07_pee_0814_Layout 03/12/2014 15:26 Page 1

8 MARKET NEWS


“Fiscal year 2014 was a successful year forInfineon, revenue rose to 4.320 billion Euros – anincrease of 12 percent”, said Infineon’s CEOReinhard Ploss at the annual press conference endof November. “The fiscal year itself followed thetypical pattern, with a seasonal decline inrevenue in the first quarter, followed by three

quarters of growth. Compared to the respectivequarters of the previous year, revenue in all fourquarters of the 2014 fiscal year was significantlyhigher, mostly with two-digit growth rates. Two factors contributed primarily to this success.

Firstly, we had already geared the company at avery early stage towards growth in demand. Andthanks to progress in cycle management, ourmanufacturing facilities responded quickly andflexibly, and were able to deliver on time. We thusseized the opportunities presented by the growingmarket”. The automotive business, Infineon’s largest

sector, benefited from various developments.Firstly, growth in the global automotive market.This was supported by the market in NorthAmerica with a revival in spring, the continuinggrowth in demand in China, and market recoveryin Western Europe. Secondly, the above-averagesales successes of the three German premiummanufacturers. Audi, BMW and Mercedes using aparticularly large number of semiconductors intotheir models, i. e. the new BMW i8 is equipped

with 75 Infineon devices particularly in the drivetrain. Thirdly, an increasing demand for functionsthat make driving safer and more convenient –especially in mid-range vehicles. And fourthly, thegrowing demand for solutions that reduce CO2emissions. In numbers – revenues increased by15 % from €1.714 billion in fiscal 2013 to €1.965billion in 2014. Business in the Industrial PowerControl segment (Power Modules) has recoveredsignificantly, mainly due to the sharp rise indemand in the renewable energy and rail transportsectors accompanied by a slow but steady revivalin industrial drives. Compared to difficult 2013fiscal year, revenues increased from €651 millionby as much as 20 % to reach a total of €783million. The Power Management & Multimarketsegment grew from €987 million in 2013 to€1.061 billion due to a greater demand forsemiconductors in mobile devices. Secondly, theintroduction of digital control concepts for DC/DCpower supply in servers showed a very pleasingdevelopment. Controller and driver ICs and low-voltage MOSFETs benefited from this. Finally, theChip Card & Security segment grew by 7 % from€463 million to €494 million in 2014. “We are confident that this overall growth trend

will continue. For the whole of the 2015 fiscal year,we expect revenue growth of 8 percent”, Plossforecasts. One of the most interesting items is of course

the planned $3 billion acquisition of InternationalRectifier. Infineon has already secured creditlines and is of good hope to close thistransaction early in fiscal 2015. “The productportfolios of Infineon and International Rectifiercomplement each other perfectly. The strengthsof International Rectifier lie in its energy-efficientIGBTs, IGBT driver ICs and intelligent powermodules for low-power applications, as well asits power MOSFETs and digital powermanagement ICs. We can combine this portfoliovery well with our range of discrete IGBTs andmodules. By taking over International Rectifier,Infineon is acquiring a technology leader ingallium nitride-based power semiconductors.This will allow us to accelerate and consolidateour roadmap with regard to GaN discreteproducts and GaN system solutions. The galliumnitride technology platform promises significantgrowth potential”, Ploss underlined.Regarding productivity, Infineon performs much

better than the US-based fabs of IR. “In particular300 millimeter wafers translate into 30 percentless investment in relation to revenues. Capacityloading is currently 80 percent”, Ploss stated. ButIR also runs a 200-mm fab in Newport/UK, herePloss refused to comment on closing or keepingthis activity. AS

www.infineon.com

Infineon Outperformes the Market

Infineon’s CEO Reinhard Ploss isproud to announce that BMWuses 75 semiconductors in its newi8 model

Market News_Layout 1 03/12/2014 15:39 Page 8

March 15 -19, 2015Charlotte Convention Center

Charlotte, North Carolina

The Premier Global Eventin Power ElectronicsTM

Visit the APEC 2015 websitefor the latest information:

www.apec-conf.org

09_pee_0814_Layout 03/12/2014 15:27 Page 1

10 ELECTRONICA 2014 www.electronica.de


More than 73,000 visitors from over80 countries and 2,737 exhibitorsfrom 50 countries made Electronicafrom November 11 – 14 in Munichthe most successful event ever.Supporting activities such as theAutomotive Conference alsoattracted 160 participants from 20countries. The focus here was onsensor fusion, connectivity and LEDlighting plus associated powerelectronics. The next electronicatakes place in Munich fromNovember 8-11, 2016.The economical situation for

electronic components is very

healthy – not only for the year 2014but also for the foreseeable future.“Our industry is rushing from onesuccess to an other, driven by theworldwide economical conditions.China is estimated to grow by morethan 7 percent in 2014, theEurozone by 0.8 percent and theUSA with 2.2. percentage points,which will lead to an Europeanmarket for electronic components of$63.6 billion in 2014 – a growth rateof 4.8 percent. And on a worldwide

scale we anticipate a growth of 6.5percent up to $506 billion in 2014and a further step of more than 4percent up to $527 in 2015.Semiconductors will jump from $332billion in 2014 up to $345 billion in2015”, underlined Kurt Sievers, headof the ZVEI Association ElectronicComponents and Systems(www.zvei.org). The German semiconductor

market is dominated by the industrialand automotive sectors, andparticularly the latter will grow bymore than 7 percent up to €8.2

billion in 2014 with a further growthof more than 4 percentage points in2015.

Automotive lighting relies onelectronics“More than 95 percent inautomotive lighting is in electronics”,expressed Wolfgang Huhn, head oflighting at the German car makerAudi (www.audi.de) in hisAutomotive Conference keynote.“Most expensive headlamps arepriced same as a gearbox, but withLEDs pricing will drop significantly

More Power for Electronics

More than 73,000 visitors from over 80 countries and 2,737 exhibitors from 50 countries made Electronica from November 11 – 14 inMunich the most successful event ever

“Our industry is rushing from one successto an other, driven by the worldwideeconomical conditions”, underlined KurtSievers, head of the ZVEI AssociationElectronic Components and Systems

Worldwide market ($ billion) for electronic components 2013-2015 Source: ZVEI Worldwide market ($ billion) for semiconductors 2013-2015 Source: ZVEI

Electronica_Layout 1 03/12/2014 15:18 Page 10

www.electronica.de ELECTRONICA 2014 11

POWER TO MAKELIFE COOLERWith its best-in-class performance enabling heat loss reduction, the UMOS IX helps to keep you cool. Our DTMOS family with its compact design delivers

application,Toshiba has the power to make it happen.

UMOS IX: 40V MOSFETs with RDS(on)

DTMOS - low loss performance in 600V, 650V & 800V class Smallest packaging (SMOS line-up) SiC Diodes Automotive MOSFETs

www.toshiba-components.com/power

and in ten years Xenon-based lampswill be the past. Matrix LED lampsconsisting of 25 high-beam LEDs perheadlamp controlled by software willbe the future even for the mass ofcars, but the laser is the next bigthing”.

“LEDs have much better efficiencythan Xenon headlamps but needsgood thermal management”, saidWolfgang Pohlmann, head of opto-mechatronic technology at Hella(www.hella.com). “Thus we expectthat LEDs are penetrating the

automotive market relatively fast”. According to Thomas Fröhlich,

head of LED lighting at MagnetiMarelli in Reutlingen/Germany(www.al-lighting.com), up to 3percent CO2 emissions can besaved by moving from halogentowards LED headlamps, also someweight by reducing harnessing.“Worldwide production is growing

from around 86 million cars in 2014up to 103 million in the year 2019,in the EU this will correspond from21 to 29 million, and for Asia from43 to 55 million units with moreadvanced functions. LED share willgrow from 3 percent in 2014 up to23 percent in 2019 withcorresponding LED driver channelsup to 310 million. Thus optimized

LED drivers are needed – the movetowards 48 V secondary powersupply in the car could ease LEDdriver design by eliminating DC/DCboost drivers and thus increasingefficiency”.

“Adaptive driving beam is currentlyoffered based on HID and LED lightsources, but data acquisition viamulti-purpose cameras is a pre-

“More than 95 percent in automotivelighting is in electronics”, said WolfgangHuhn, head of lighting at Audi

Penetration ofheadlamptechnology bytechnology andregion 2014-2019Source: Hella




requisite and data processing andsoftware development becomes keyin future headlamp design”, saidClaus Allgeier, head of automotivelighting at Osram (www.osram-os.com). Today’s cutting edgelighting technology is the Audi A8LED Matrix Beam consisting of 5secondary optics (each with a 5 LEDchip linear matrix) which delivermatrix elements in light distributionto generate glare free highbrightness. In total (per side) 25

single addressable LED chips areused to generate the Matrix part ofthe beam. Oncoming and precedingcars are not glared, passengers onthe road are highlighted by theheadlamp. The German project SEEL(partners Osram, Audi and Infineon)covers the development of an MatrixLED headlamp consisting of 5modules (with primary andsecondary optics, each with a 20LED chip 2D matrix) delivering matrixelements. In total (per headlamp)

100 single addressable LED chipswould be used to generate thematrix part of the beam. Lightdistribution is divided in 4 rows and25 columns. “But Lasers offerunbeatable luminance because focallength and corresponding opticsallow extremely small apertures andLaser radiation can be controlledprecisely”, Allgeier underlined. One ofthe first examples is the BMW i8. Micrel’s (www.micrel.com)

MAQ3203 is capable of driving

multiple HB LEDs in series at morethan 90 % efficiency with ±5 %current accuracy from input voltagesof 4.5 V to 42 V. With its hystereticcontrol architecture and high-sidecurrent sense scheme, the devicedrives the HB LEDs with constantcurrent. The MAQ3203 operatingfrequency is adjustable up to 1.5MHz which allows flexibility in designand offers a frequency ditheringfeature to mitigate EMI. The ICfeatures a dedicated PWM dimmingpin, an enable pin for very lowpower shutdown, over-temperatureprotection and an under-voltagelockout. The MAQ3203 has anexternal power switch and requiresno external compensation. Thedevice is available in a SOIC-8Lpackage and will drive two 1.2A LEDstrings demonstrating both high andlow beam capabilities. On Semiconductor

(www.onsemi.com) introducedtwo new devices for use in vehiclelighting systems. The NCV78763power ballast and dual channel LEDdriver provides a single-chip that iscapable of driving two strings ofLEDs up to 60 V. A DC current of 1.6

Name:

Company Name:

Address:

Post Code:

Tel: Total Number of Copies @ £ p+p Total £

Drives S & S Hyd H/B Pne H/B Ind Mot CompH/B H/B Air

DFA MEDIA LTD,

QUANTITY QUANTITY

Hydraulics&Pneumatics There are now 6 of these handy

reference books from the publishers ofthe Drives & Controls and

Hydraulics & Pneumatics magazines.

Published in an easily readable styleand designed to help answer basicquestions and everyday problems

without the need to refer to weightytextbooks.

We believe you’ll find them invaluableitems to have within arms reach.

From the publishers of

QUANTITY QUANTITY QUANTITY

If you would like to obtain additional copies of the handbooks, please completethe form below and either fax it on 01732 360034 or post your order to:

You may also telephone your order on 01732 370340 Cheques should be made payable to DFA MEDIA LTD and crossed A/C Payee.Copies of the handbooks are available at £4.99 per copy.Discounts are available for multiple copies. 2-5 copies £4.30, 6-20 copies £4.10, 20+ copies £3.75.

QUANTITY

PRACTICAL ENGINEER’S HANDBOOKSPRACTICAL ENGINEER’S HANDBOOKS

HYDRAULICS

INDUSTRIALMOTORS

SERVOSAND STEPPERS

PNEUMATICS

COMPRESSED AIRINDUSTRIAL

ELECTRIC DRIVES

PLEASE ALLOW UPTO 28 DAYS FOR DELIVERY

192 The High Street, Tonbridge, Kent TN9 1BE

Engineers Handbook, DFA MEDIA LTD,192 The High Street, Tonbridge, Kent TN9 1BE

Postage and Packaging:1-3 copies: £2.99 4-6 copies: £4.99 7 or more copies: £6.99

Estimatedworldwideautomotive LEDdriver channels2014-2019Source: MagnetiMarelli


13


www.electronica.de ELECTRONICA 2014INDUSTRY NEWS

A can be supported on each output.The built-in current-mode voltagebooster controller enables inputcurrent filtering. An internal PWMdimming function, coveringfrequencies up to 4 kHz, is alsoincluded in addition to the option ofPWM direct-feed for full frequencyand resolution control from theexternal microcontroller. Optimizedfor front lighting applications, thisdevice can be employed in highbeam, low beam, turn indicator,static cornering, fog and daytimerunning lights. For each individualLED channel there is an independentbuck switch output, through whichboth the output current and voltagecan be configured to meet specificapplication criteria. Configuration isdone via the device’s serialperipheral interface (SPI). TheNCV78763 is offered in threepackage variants: 5 mm x 5 mmQFN-32, 7 mm x 7 mm QFN-32 and36-pin SSOP. The new NCV7691current controller for automotive LEDlamps targets rear combinationlamps (RCL), center high-mountedstop lamps (CHMSL), and day-timerunning lights (DRL). This highlyintegrated pre-driver contains PWMand diagnostic capabilities, as well asbattery connection and negativetemperature coefficient (NTC) inputin a single chip.Rohm’s (www.rohm.com/eu)

new AEC Q100 qualified 12 channelBD1837XEFV-M automotive LEDdrivers are packaged in a small HT-SSOP28 with 10V output rating. 6 bitcurrent brightness calibration forindividual LED binning is available foreach output while 6 global PWMchannels allow dimming from almost0 – 100 % on all outputs. The deviceincludes 12 constant current output

channels with a maximum of 50 mAper channel and, in order to achievea higher output current, the channelscan be combined in parallel. Thedevice is able to performcomprehensive diagnostic checks(open / short load / temperature /under voltage) to detect LED failureand over- temperature on chip. Dueto its emergency warning, it preventstotal failure and makes the chipsetting back to “limp function”(typically 10mA) if the externalresistor fails. The settings of allinternal registers can be read out toverify written information at any timewhile the integrated SPI interfaceensures sophisticated communicationeven during over-temperature up to150°C.

Automotive embedded powerInfineon Technologies(www.infineon.com/embeddedpower) announced anEmbedded Power family of bridgedrivers addressing the growing trendtowards intelligent motor control fora wide range of automotiveapplications. On a single chip a high-performance microcontroller usingthe ARM® Cortex™-M3 processor, aswell as the nonvolatile memory, theanalog and mixed signal peripherals,the communication interfaces alongwith the MOSFET gate drivers areintegrated. “In automotive applications 2.3

billion electric motors were used inthe year 2012, at average 28 motorsper car. In the year 2017 this usagewill grow to 30 motors per car andthus reaching 2.9 billion units. Anintegrated IC for driving such motorsin various applications such aspumps, fans or body control makessense”, said Theodore Varelas,Product Marketing ManagerAutomotive Embedded Power. Theperipheral set of the TLE987x andthe TLE986x includes a currentsensor, a successive approximation10-bit ADC synchronized with thecapture and compare unit(CAPCOM6) for PWM control and16-bit timers. Furthermore, a LINtransceiver is integrated to enablecommunication to the devices alongwith a number of general purposeI/Os. Both series include an on-chiplinear voltage regulator to supplyexternal loads. They operate from5.4 V up to 28 V. The bridge driversfeature programmable charging anddischarging current. The patentedcurrent slope control technique

KEEP UP WITH THE TIMES

II




optimizes the system EMC behaviorfor a wide range of power MOSFETs.The products can withstand loaddump conditions up to 40 V whilemaintaining an extended supplyvoltage operating down to 3.0 Vwhere the microcontroller and theflash memory are fully functional.Infineon provides starter kits tosupport the design-in.

More power for DC/DCThe newly formed Architects ofModern Power (AMP) consortium(www.ampgroup.com) consistingof CUI (www.cui.com), EricssonPower Modules(www.ericsson.com), and Murata

(www.murata-ps.com)announced at Electronica its firststandards aimed at establishingcommon mechanical and electricalspecifications for the developmentof advanced power conversiontechnology for distributed powersystems. The initial standards coverdigital POL and DC/DC converters.Beyond purely mechanicalspecifications, it is thestandardization of monitoring,control and communicationsfunctions, and the creation ofcommon configuration files for plug-and-play interoperability that willensure compatibility betweenproducts from these vendors. Two

standards have been defined fordigital point-of-load converters. The‘microAMP’ specification coverssupplies rated at 20 to 25 A invertical and horizontalconfigurations, while the ‘megaAMP’defines requirements for 40 to 50 Avertical and horizontal units. For busDC/DC converters the ‘ABC-ebAMP’standard relates to bus bricksmeasuring 58.42 x 22.66 mm andranging from 264 to 300 W. Forquarter-brick supplies, measuring58.42 x 36.83 mm and rangingfrom 420 to 468 W, the group hasdefined the ‘ABC-qbAMP’ standard.These standards detail mechanicalfootprints, features, andconfiguration files. “Following thelaunch of Architects of ModernPower last month, the release ofthese standards marks an importantfirst step on our shared technologyroadmap”, underlined AMP Groupspokesperson and CUI VP ofAdvanced Power, Mark Adams. “Allproducts rely on the Intersil DigitalPower Controller, but the powerstage might be different. CUI prefersIR’s DrMOS”. “Providing a truemulti-sourced, high efficiency powerecosystem with exceptional supplychain reliability enables continuity ofproduction for our customers”, saidPatrick Le Fèvre, MarketingCommunications Director at EricssonPower Modules, while Murata PowerSolutions’ VP of Strategic ProductMarketing, Steve Pimpis, added, “wemake this advanced technologyavailable in a way that allows wideradoption than would be possiblewith single-source solutions”.Exar (www.exar.com)

showcased its 10 A/15 A POL

DC/DC modules XR79110/115 andgave an outlook on future releases.“A new version measuring 12 x 14mm intended for telecomapplications will provide 20 A at0.6 to 5 V output featuring aninternal inductor of around 1.7 µH”,said Marketing Director Jon Cronk.Switching frequency isprogrammable up to 800 kHz. Anext generation power managementsystem will feature a 4-channelprogrammable buck controller for 6-40 V input and 0.6-5.5 V output,integrated synchronous FET Drivers,switching frequency up to 1.2 MHzin 7 x 7 QFN package. Vishay (www.vishay.com)

introduced a new family ofintegrated DrMOS power stagessolutions in three PowerPAK®package sizes to meet the variousdesign challenges in high-power andhigh-performance multiphase POLapplications. The SiC789 and theSiC788 are offered in the MLP66-40L with a DrMOS Standard 4.0 (6mm by 6 mm) footprint, while theSiC620 and the SiC620R are offeredin the new 5 mm by 5 mm MLP55-31L package and the SiC521 isavailable in the 4.5 mm by 3.5 mmMLP4535-22L. “The devices areoptimized for on-board DC/DCconverters featuring switchingfrequencies up to 1 MHz andefficiencies up to 98 percent”, saidNorbert Pieper, SVP Sales BusinessDevelopment. “Regardingautomotive, the 48 V supply is apre-step for autonomous driving, forthis application we are designingnew MOSFETs. And for EVapplications we will release 1200 VIGBTs”.

Theodore VarelaspresentedInfineon’s newEmbedded Driversfor electric motorsin automotiveapplications

Ericsson’s Patrick Le Fèvre (left), CUI’s Mark Adams, and Murata’s Steve Pimpis announced first AMP Groupstandards for digital POL bus conversters

“The automotive 48 V supply is a pre-step for autonomousdriving, for this application we are designing new MOSFETs”,said Vishay’s Norbert Pieper


DFA Media Ltd • 192 The High Street • Tonbridge • Kent • TN9 1BE • UK • tel: +44 1732 370340 • e: [email protected]

The UK’s leading exhibition for Drives, Automation, Power Transmission and Motion Control Equipment

Drives & ControlsExhibition & Conference 2016

To discuss exhibiting contact:Doug Devlin on: t: +44 (0) 1922 644766 m: +44 (0) 7803 624471 e: [email protected]

Nigel Borrell on: t: +44 (0) 1732 370 341 m: +44 (0) 7818 098000 e: [email protected]

visit www.drives-expo.com ...The Perfect Fit

12-14 APRIL 2016 NEC BIRMINGHAM

D&C Show ad A4_Layout 1 14/08/2014 18:46 Page 1

16 INDUSTRY NEWS


Intelligent power control optimizes the use of electricity and ensuressmooth control of equipment. For instance in machine tools, the currentflow increases abruptly when the tool starts working on the part to bemachined. The better and faster the feedback signal, the smoother thecontrol of equipment operation. Intelligent power control is also a way ofoptimizing the use of electricity. Upgrading variable speed drives ofelectrical motors brings substantial energy savings. A fine control ofcurrent, no matter what the operating temperature, is able to providesubstantial energy savings of up to 30% or more and improves speedand torque control.The problem of torque ripple minimization in synchronous motors is a

challenge for engineers and there are constant efforts made to reduce it.The new LEM LFxx10 current transducer family improves currentmeasurement accuracy across the whole operating temperature range,dramatically improving the torque ripple performance. Previously, it wasdifficult to maintain consistent current measurement gain across thethree phases of a motor drive due to accuracy variations amongtraditional current measurement sensors. This accuracy variation canresult in excessive torque ripple. The LFxx10 family’s extremely highmeasurement accuracy reduces torque ripple, allowing more comfort forelevators, locomotives or other transport applications, as well as allowinghighest dynamics and positioning precision for machine-tools, robots andother automation applications.

New drives require high current measurement accuracyThe LFxx10 family higher current measurement accuracy also enablesbetter motor control efficiency. Energy savings are being driven by thegradual adoption of the new energy-related directives (ErP) for electricalmotors. IE2 efficiency was imposed in 2011 and IE3 is required for smallmotors from 2015, with an extension to motors up to 7.5kW in 2017. Themost cost-effective solution to reach these standards is to use a high-performance drive controller, with high current measurement accuracy.Many applications face constraints due to immunity - for example

modern onshore and offshore windmills, where the electricity producedneeds to be fed into and controlled within the power grid. The stability ofthe current measurement on the grid side over temperature is a key

requirement in this kind of application. Wind power applications demandthe robustness and high accuracy that the LFxx10 current transducerfamily offers. While the basic application has not changed over the last20 years, the adoption of permanent magnet generators and the increasein windmill size are raising the demands on current sensors.Firstly, the introduction of higher efficiency Permanent Magnet (PM)

generators is leading to an increase in level current. The traditionaldouble-fed generator requires a relatively low power inverter. In fact, thegenerator itself is the main power source and the inverter is onlycontrolling the excitation of the generator. It therefore handles only afraction of the main power. In contrast, for Permanent Magnet generator,the inverter needs to convert the frequency of all the power, increasingthe current to be converted several fold. The LF family is offered in fourranges from 200 A to 1000 A and can suit most power needs.Additionally, a 2,000 A will be released next year. Furthermore, the bigger size of the windmills (some offshore mills are

already at 6 MW) is creating electromagnetic challenges. Somemanufacturers chose to deal with the increase of power by splitting theinverter into several modules in parallel. These compact designs encloseseveral bus bars carrying thousands of amperes and generating very highstray fields. As described hereafter, the LF 510 and LF 1010 models aredesigned around a partial air-gap which significantly reduces the impactof external fields. This feature is particularly welcomed by engineersworking on modular inverters.Finally, as the power generated increases, improvements in sensing

accuracy offer even greater power savings. A good example is the impactof the offset error to the output current. The offset error is the value givenby the transducer when no current is flowing at any temperature. It canalso be seen as the current flowing when the sensor gives a 0 A output.In practice the offset current fools the inverter control loop and isresponsible for the generation of a DC current. Since the windmill isconnected to the grid through a transformer, this DC current is blockedand dissipates into the transformer. Thanks to its ASIC technology, thenew LF xx10 family achieves an extremely low offset current and offsetdrift. For example, the LFxx10 offset drift is up to 5 times lower than theprevious generation of current transducers LF xx05. The design features

Hall Effect Technology Improved

New LF xx10 current transducer range

Industry News_Layout 1 03/12/2014 15:01 Page 16

INDUSTRY NEWS 17


of the new LF xx10 family make it well-suited to support designengineers building windmills that are larger and more efficient than everbefore.

ASIC improves performanceWith the new LF xx10 family, LEM brings the performance of a closedloop Hall effect technology-based transducer to the level of a closed loopFluxgate technology based transducer. The Hall chip is a dedicatedApplication Specific Integrated Circuit that uses several high performancetechniques (e.g. spinning and specialist IC geometry), some of whichwere patented, to improve the offset and offset drift dramatically whencompared to previous solutions. Based on this new ASIC, a completecurrent transducer range has been designed to cover nominal currentmeasurements from 200 A to 2000 A: LF 210-S, LF 310-S, LF 510-S and,LF 1010-S models– with a fifth one, the LF 2010-S, coming out inFebruary 2015.The LFxx10 series breaks new ground, delivering up to 5 times greater

global accuracy over the temperature range (from 0.2 to 0.6 % of IPN)versus the previous generation of closed loop Hall effect currenttransducers, with a maximum offset drift of just 0.1 % of IPN.Thanks to the partial air gap of the magnetic core, the LF 510, 1010

and 2010 models have a very low sensitivity to external AC and DC fields.This allows a more compact design as there is practically no sensitivity tohigh current conductors near to the transducer. The sensitivity against ACor DC fields (worst case) with the LF 1010-S model is five times betterthan with the LF 1005-S (previous generation). The typical error with an

LF 1010-S is 2% of IPN compared with 10 % using an LF 1005-S, whensubmitted to the same conditions caused by AC or DC fields. The LF xx10transducers have fast response time, with a typical delay (defined at 90% of IPN) against a current step at IPN of less than 0.5 µs.

Working principleFor accurate measurement of DC currents, the technology compensatesthe current �P created by the current IP to be measured by an opposingcurrent linkage �S created by a current IS flowing through a knownnumber of turns NS to obtain:

�P – �S = 0 or NP x IP – NS x IS = 0

with NP the number of primary turns and NS the number of secondaryturns.

To obtain accurate measurement, it is necessary to have a highlyaccurate device to measure the condition � = 0 precisely. To achieveaccurate compensation of the two opposing current linkages (�P and �S),a detector capable of accurately measuring � = 0 must be used, whichmeans the detector must be very sensitive to small values of a residualmagnetic flux � (created by the current linkage �) to achieve thegreatest possible detector output signal.Using this operating principle, together with the new LEM-designed

Hall effect ASIC (previously mentioned) as the detector, the LF xx10current transducers bring accuracy to the next level for nominal currentmeasurements from 200 to 2000 A (4000 A peak), meeting the high-performance demands of the power electronics world and itsapplications.

www.lem.com

Chip layout of the ASIC used in the new LF xx10 current transducer range

Partial air gap on magnetic core

Closed loop current transducer principle

To receive your own copy of

Power Electronics Europe subscribe

today at:

www.power-mag.com

Industry News_Layout 1 03/12/2014 15:01 Page 17

18 DC/DC POWER MODULES www.micrel.com


Power Modules to the RescueThere are an increasing number of suppliers offering power modules due to improvement in technology onmany fronts. It is now time to take advantage of this new generation of power modules. The process ofselecting a power module is important and designers need to select the best solution in terms of value(performance and size) versus cost effectiveness. Brian Hedayati, Vice President, Marketing, Linear &Power Solutions, Micrel Inc., USA

The requirements for higher densityboards and reducing system size aredriving the need for smaller DC/DCsolutions, resulting with the evolution ofpower modules. It took many years forthe power module technology to arrive tothe mass market. In the early days, it wasvery difficult to design power converters.At the time, they were entirely designedwith discrete and leaded components ortaken from a tap off a transformer. Thereality was that designing powerconverters was considered a black art.There were very few experts in this fieldwho had a great understanding of allaspects of power conversion. The designcycles took more than a year because ofmultiple design iterations were neededdue to stability issues, component failure,or EMI issues caused by high di/dt ordv/dt and improper or constrainedlayouts that increased the amount ofradiated EMI.

Later, companies such as Unitrodedeveloped PWM controllers, and powertransistor suppliers started offeringMOSFET technology to replace bipolartransistors. The switching conversionfrequency increased to about 100 kHz,and surface-mount components enteredthe mainstream. With improvements inprocess, packaging, and MOSFETtechnology, DC/DC regulators with

integrated controller and power switchesarrived. This allowed even further reductionof board space and improvement of powerdensity (see Figure 1).

Today there are only a fewsemiconductor suppliers offering an all-in-one DC/DC solution in a single package.In addition to the controller and powerswitches, inductors and passivecomponents are now integrated into thepackage. To reduce the form factor of themodule package, the inductor size had tobe reduced dramatically while still offeringgood performance. This could beachieved by increasing the switchingfrequency, thus allowing a smaller inductorwith less inductance to be used, whichalso reduces the DC resistance of theinductor. The trade-off would be anincrease in switching losses from thecontroller and MOSFETs.

The good news is that semiconductorprocesses and MOSFET technology hasimproved significantly over the years,reducing the impact of the higherswitching frequency. With smallergeometries, improved performance couldbe achieved and silicon size could bereduced. Newer MOSFETs with improvedfigure of merit, helps optimize theswitching and conduction losses trade-off,allowing for improved efficiency, therebyallowing for a smaller package footprint to

be used with adequate power dissipation.In addition, packaging technology hasevolved where several Watts of powerdissipation can be achieved in a smallpackage as thermal resistance has beenreduced. In addition, passive componentsupplies (capacitors, diodes, resistors)have been reducing their footprints tosave space as well. With all of thesetechnological improvements, this hasenabled integrated power modules toachieve the level of power density that isavailable today (Figure 2).

Why use power modules over adiscrete approach?Beside the fact that power modulesachieve a smaller footprint than discretesolutions, there are many otheradvantages of using power modules.Although it is possible to get the highestefficiency using a discrete approach, ifsaving board space is your majorrequirement, you may benefit from tradingoff a few percent of efficiency to meetdensity requirements. For example, Micrelpower modules achieve efficiency in the90 % range, as well as great efficiency atlight load due to HyperLight Load™technology.

Discrete power converters require morespace and careful component location asthis becomes a concern. The layout and

Figure 1: DC/DCconverter evolutionand trends

Micrel Feature_0814_Layout 1 03/12/2014 14:44 Page 18

www.micrel.com DC/DC POWER MODULES 19


routing can be quite challenging to get anoptimized layout. The AC current loops arelarger and can more susceptible toradiated EMI issues as these loops act likean antenna. The integration of the keypower components within a moduleminimizes the size of the loops with onlythe need to put the input and outputcapacitors close to the IC and connectedto GND, which is fairly simple toimplement. For the majority of thecustomers, meeting CISPR22, CLASS B orEN55022 requirements is a necessity.Figure 3 shows the performance of thesenew modules.Additional performance considerations

for power designs include load-transientand thermal management. The loadtransient is a function of control looparchitecture, switching frequency, andoutput filter size. Thermal issues arerelated to the operating ambienttemperature and the ability to removeheat from the power components. Forpower modules, this is one of the primaryconcerns as a majority of the heat isdissipated within the package. With asmaller foot print, there is less contact

area to the board (for QFN typepackages). As a result, having anadvanced package with low thermalresistance (especially junction to board) inconjunction with a highly efficientregulator is a must in order to achieve thebenefits of using a small power modulesolution (Figure 4).

Meeting challenging systemrequirements While fully integrated, the latest powermodule solutions allow the end-usersome flexibility, such as setting the currentlimit, the frequency, and the outputvoltage with external resistors. In this way,the same module can be adjusted fordifferent output voltages in the system.The ability to adjust the current limitallows for optimum over-currentprotection. The ability to adjust thefrequency addresses the efficiency versustransient trade-off. Additionally, since manyof the parts are included in the powermodule, the layout and routing of thedesign is much easier. Depending on thepower module vendor, the size and shapeof the exposed thermal pads can be

different. Some vendors offer very easypads locations with their QFN packagewhile other use LGA/BGA packaging,which can be more difficult and moreexpensive to assemble.When designing for distributed power

system for industrial or medicalapplications, small high voltage solutionswith wide operating input and outputvoltage ranges are ideal. The MIC28304 isa 70 V/3 A module in a small 12x12x3mm package, which, when compared witha discrete solution, can reduce the PCBrequirement by more than 60 %. Thedevice’s external components give theflexibility to set current limit frequency ifthere is a need to avoid certain switchingfrequency and output voltage, which isprogrammable from 0.8 V to 24 V. Thedevice achieves impressive efficiency levelsboth at light load and full load in theHyperLight Load version. Finally, this powermodule meets EMI CISPR 22 Class B spec.The requirements are different when

designing for enterprise infrastructure,datacom, FPGA power, or distributed 12 Vbus applications. These applications oftenrequire higher current, high efficiency, and

Figure 2: Theimprovement intechnology wasneeded on manyfronts

Figure 3: Efficiency(left) and EMIperformance


20 DC/DC POWER MODULES www.micrel.com


small size as board space is a premium.The point of loads often need to be closeto the processors. For this type ofapplications, the MIC452xx family of partsoffers the smallest form factor and highestpower density. The control architectureused is optimized for a fast loop response,resulting with the need for less outputcapacitance.. At the same time, the wideinput voltage range 5 V to 24 V allows theuse of the same family for supplying froma 5 V or 12 V common bus rail, reducingthe number of parts to qualify and thathave to be kept in inventory. Once again,a single device offers high flexibility andhas minimum external components toachieve a very small form factor. Offeredin a QFN packages, these devices areeasier to lay out when compared with anLGA solution and all components can beplaced on the top side (Figure 5). Someof the passive components can be placedon the bottom if an even smaller solutionis required.Other applications that are suited for

DC/DC power modules include solid-statedrives, hand-held devices, enterprisestorage, and servers, Wi-Fi/WiMaxmodules, and wearable electronics, whereboard space and low-profile is oftenlimited. In these types of applications, thehigh switching frequency of 4 MHz allowsfor a very small internal inductor, allowingfor a very miniature packaged solution. Inaddition, with the high switchingfrequency, small output capacitors can beused without significant output ripple. TheMIC33163 total solution requires only 4.6mm x 7 mm of board space with amaximum height of 1.1 mm that iscapable of delivering 1 A of output current(MIC33163). Due to the amount of board

space needed by these devices, thesedevices are often used as a replacementto LDOs with significant improvement toefficiency These devices have an inputvoltage range from 2.7 V to 5.5 V with a 4MHz switching frequency, and offerefficiency up to 93 % while meeting EMIperformance (CISPR22 Class B).

ConclusionThe latest DC/DC power modules aresimple to use with a minimum number ofexternal parts and ares allow easy PCBlayouts. Their compact form factors useminimal board space, and new controlarchitectures are used to achieve fasttransient response, which saves on the

number of filter capacitors. The newgeneration of power modules has smallform factors, yet still offer excellentconversion efficiencies. System reliability isenhanced since they are fully tested andhave minimum external components,which is especially important forapplications where the systems areexposed to moisture and harshenvironments. Ultimately, the ease of useoffered by power modules is driving theirincreased adoption. Knowing a design willwork the first time and having theflexibility to accommodate changingspecifications late in the design cycle arestrong compelling reasons to considerusing power modules.

Figure 4: Hyperspeed control offers fast loadtransient response

Figure 5: Simple landpatterns optimizedfor thermalperformance andeliminating assemblyissues


DFA Media Ltd • 192 The High Street • Tonbridge • Kent • TN9 1BE • UK • tel: +44 1732 370340 • e: [email protected]

The exhibition and conference bringing the offshore energy market together under one roof

European Offshore Energy 2016

To discuss exhibiting contact:Ryan Fuller t: 01732 370344 m: 07720 275097 e: [email protected]

visit www.europeanoffshoreenergy-expo.com

12-14 APRIL 2016 NEC BIRMINGHAM

...The Perfect Fit

EOE Show ad A4_Layout 1 09/09/2014 11:13 Page 1

22 SOLAR POWER www.linear.com


Finding True MaximumPower PointIn solar power systems, the bulk of the expense is in the panel and batteries. Any cost-effective solar powersolution maximizes the capacity usage and lifetime of these components. For instance, a high qualitycharger increases battery run time, reducing capacity requirements, and extends battery lifetime, minimizingmaintenance and replacement costs. Likewise, using a DC/DC controller that extracts the maximumavailable energy from the solar panel reduces the size and cost of the panels required. Tage Bjorklund,Senior Applications Engineer, Power Products, Linear Technology Corp., USA

The LT8490 is a charge controller forlead acid and lithium batteries that can bepowered by a solar panel or a DC voltagesource. It includes true maximum powerpoint tracking (MPPT) for solar panels andoptimized built-in battery chargingalgorithms for various battery types - nofirmware development required. 80 Vinput and output ratings enable theLT8490 to be used with panels containingup to 96 cells in series. The power stageuses four external N-channel MOSFETs anda single inductor in a buck-boostconfiguration. Unlike most charge

controllers, the buck-boost configurationallows the charger to operate efficientlywith panel voltages that are below, aboveor equal to the battery voltage. Theminimum panel voltage is 6 V.

Batteries live longer and run longerwhen the charge algorithm is optimized forthe battery type. Likewise, a highperforming MPPT charger, which tracks thesolar panel maximum power point duringpartial shade conditions, allows the use ofa smaller and lower cost solar panel.Creating a discrete-component chargersolution to perform all of these duties

would be costly and time consuming,typically requiring a microcontroller, a highperformance switching regulator and alengthy firmware development cycle.

Single-IC solar powered batterycharger solutionThe LT8490 is an MPPT battery chargercontroller with a long list of featuresincluding:

� integrated MPPT algorithm (no firmwaredevelopment required) reduces time tomarket

Figure 1: Simplified solar powered battery charger schematic

Linear Feature_0814_Layout 1 03/12/2014 14:47 Page 22

www.linear.com SOLAR POWER 23


� integrated buck-boost controller allowsVIN to be above, below or equal to VBAT

� supports lead-acid and lithium-ionbatteries

� 6–80 V VIN and 1.3–80 V VBAT

The LT8490 can be powered by a solarpanel or any DC voltage source. For aparticular battery voltage, a wide range ofsolar panel types can be used, as thepanel voltage can be lower or higher thanthe battery voltage. The LT8490 acceptspanel inputs from 6 V to a maximum (coldtemperature) open circuit voltage of 80 V;a range corresponding to 16 to 96 series-connected solar cells. Since the power stage is external, it can

be optimized for the application. Chargecurrent limits (and input current limit whena DC voltage source is used) can beconfigured as needed.

True maximum power point trackingWhen operating from a solar panel, theLT8490 maintains the panel voltage at thepanel’s maximum power point (Figure 1).Even during partial shade conditions,when more than one local maximumpower point appears (an effect of bypassdiodes inside the solar panel), the LT8490detects and tracks the true maximum. Figure 2 shows the P-V curves for a

common 60-cell 250 W panel under twodifferent lighting conditions. Themaximum power point (200W) occurs at

25 V when the panel is fully illuminated.In partial shade (see Figure 3), theavailable power at a 25 V panel voltagedrops to 50 W, with the new truemaximum power point (128 W)appearing at 16 V. Note that the original25 V/200 W power peak actually movesto a local maximum ~32 V/63 W. This dual local maximum effect is the

downfall of traditional MPPT functionsfound in a number of controllers, for theyfollow the initial 25 V/200 W peak as itshifts to 32 V/63 W. In contrast, theLT8490 finds the true MPP at 16 V/128W, yielding an additional 65 W from thepanel. It does this by measuring the entirepower curve of the panel at regularintervals and locating the true maximumpower peak at which to operate. In thiscase, more than twice as much chargepower is extracted, with even greater gainspossible in other shade conditions.

Charge control functionsCharge algorithms can be configuredaccording to the requirements of eachapplication by adjusting the voltage on twoconfiguration pins. Lead-acid batteries builtwith AGM, gel and wet cell technologiesrequire slightly different charge voltages forbest lifetime, and Li-ion and LiFePO4 cellshave charge requirements that aredifferent from lead-acid batteries. Thussome of the built-in and configurablecharge control functions are charge voltagetemperature compensation (typically forlead-acid batteries) using NTC sensor; overor under battery temperature stops chargecurrent to protect the battery; dead batterydetection stops the charging, to avoid ahazard; adjustable trickle charging of adeeply discharged battery reduces risk ofdamage; constant current charging thatchanges to constant voltage charging asthe battery voltage reaches its final value;reduction of charge voltage to a lower floatvoltage level when the battery is fullycharged; and charging time limits can beset when operating from a DC voltagesource.

ConclusionThe LT8490 is a full-featured true MPPTcharge controller that can operate from asolar panel or a DC voltage source with avoltage range from 6V to 80V, charginglead-acid or lithium batteries from 1.3V to80V. The power stage is easily configuredby selecting four MOSFETs and aninductor, allowing the charger to operatewith VIN above, below or equal to thebattery voltage. All necessary functions areincluded, with built-in battery chargingalgorithms and MPPT control, requiring nofirmware development.

Figure 2: The powercurve of a 60-cell 250W solar panel withentire panelilluminated and witha small shadow partlycovering one cell (seeFigure 3)

Figure 3: Solar panel shaded in top right corner

To receive your own copy of Power Electronics Europe subscribe today at:

www.power-mag.com

Linear Feature_0814_Layout 1 03/12/2014 14:47 Page 23

24 POWER DIODES www.onsemi.com


Defining Schottky Diodesbased on Power DissipationAs wireless devices grow more sophisticated and consumers demand longer battery lives, manufacturersneed to save power wherever possible. One area where a large amount of power is consumed is in theLED backlight for LCD displays. To drive these LEDs a boost circuit is implemented to increase the batteryvoltage to a level large enough to overcome the forward voltage of the LEDs. Choosing the correct Schottkydiode for this boost circuit can help reduce the overall power dissipation of the system. For this reason,defining Schottky diodes based on overall power dissipation rather than individual parameters of the deviceis a preferable approach. Steven Shackell, ON Semiconductor, Phoenix, USA

The main parameters on which newSchottky diodes were defined in the pastwere forward voltage and reverse leakagecurrent. Two large contributors to thesespecifications are the Schottky barriermetal and the Schottky contact area. Sincethe parameters share a dependence onthe same variables, there is a trade-offbetween the two. As the forward voltageis reduced, the reverse leakage current isincreased, and vice versa. As the industryhas driven to lower and lower forwardvoltages, the reverse leakage currents havebeen steadily increasing. It has nowreached a point where additionalreductions in forward voltage result inlarger increases to the reverse leakagecurrent, resulting in higher overall powerdissipation.

Nevertheless, it is still common to thinkthat the forward voltage is the maincontributor to the power dissipation andreverse leakage current is of lessimportance; this is not necessarily trueanymore. For example, if the outputvoltage of the boost converter (see Figure1) is much larger than the input voltagethe resulting duty cycle will be very large.The larger the duty cycle of the boostconverter the longer the Schottky diode isreverse biased. In addition to the largerduty cycle, the output current of the boostconverter could range from 10 to 40 mA.This is usually the case for the boostconverter used in the LED backlight

application for a wireless device. Table 1compares a boost optimized Schottkydiode from ON Semiconductor (Device1) with another popular low forwardvoltage Schottky diode (Device 2).Although the forward voltage of Device 2is 24 % lower, the power dissipation is39 % higher.

Calculating the power dissipationIn the above table the power dissipation(PD) is calculated by the equations 1 and 2:

Vout + VF - Vin

D = —————————— (1)Vout - VF

PD = D x Vout x IR + (1 – D) x VF x IF (2)

where D = Duty Cycle of Boost Converter,PD = Schottky Diode Power Dissipation, Vout = Output Voltage of Boost Converter,Vin = Input Voltage of Boost Converter, IF = Average Forward Current throughSchottky Diode, VF = Forward Voltage ofSchottky Diode at IF, IR = Reverse LeakageCurrent of Schottky Diode at Vout.

The first step in calculating the powerdissipation is to calculate the duty cycle.The values of Device 2 in Table 1 will beused to do this. In wireless devices theinput voltage/battery voltage can be aslow as 2.5 V. The output voltagedepends on the configuration of theLEDs. A common configuration is onestring of 10 LEDs. For white LEDs theforward voltage is around 3.3 V. For thisconfiguration the output voltage will be

Table 1: Boost optimized Schottky vs. low VF Schottky

Figure 1: Schematic of boost converter

m: +44 (0) 7803 624471 e: [email protected] e: [email protected]

OnSemi_Feature_Layout 1 03/12/2014 14:50 Page 24

www.onsemi.com POWER DIODES 25


33 V. The forward voltage of Device 2 is0.2 V at 10 mA. When these values areplugged into Equation 1 the resultingduty cycle is 92.5 %. This means thatthe Schottky diode will be reverse biasedfor 92.5 % of the time and forwardbiased for only 7.5 % of the time. Nowlet’s take the values from Device 2 inTable 1 to calculate the power. Whenthe device is reverse biased the voltageis 33 V and the leakage current will bearound 100 µA. The resulting powerwhen the device is reverse biased is 3.3mW. Now looking at when the device isforward biased, the voltage will be 200mV and the current will be 10 mA. Thiswill give a forward biased power of 2mW. When combining these values withthe percentage of each bias, it is seenthat the reverse bias contributes 3.05mW and the forward bias contributes0.15 mW. This example shows that in

fact most of the power is generated fromthe leakage current.

The above example assumes theforward current is 10 mA. It is importantto keep in mind that as the forward currentincreases the more the power dissipated inthe forward biased condition will increase.However, the reverse biased power willremain the same. From this we canconclude that system designers need toconsider the leakage current of Schottkydiodes in low output current boostconverters more than in high current boostconverters to minimize total powerdissipation.

Looking at the power dissipation over arange of output currents will further showthe importance of choosing a boostoptimized Schottky diode. Figure 2 plotsthe power dissipations of three equallysized devices: a Low VF Schottky, a low IRSchottky and a boost optimized Schottky.

As described above the low leakage devicehas the better power dissipation at loweroutput currents, but as the currentincreases the power dissipation rises morerapidly.

When looking at the low forward voltageSchottky diode, the influence of the highleakage is apparent at the low outputcurrents. However, the power dissipationslope is less steep and the powerdissipation becomes less than the lowleakage device at higher output currents.The boost optimized Schottky diodecombines the best-of-both of the previousdevices. It has much better performancethan the low forward voltage device at lowcurrents and continues this trend to thehigher currents. It is not superior to the lowleakage device at low currents but thepower savings are significant at highercurrents. Additionally, the boost optimizedSchottky diode takes the large currentspikes from the inductor of the boostconverter into account; the low leakagedevice does not perform well with thesecurrent spikes.

Low leakage devices will normally havea lower forward repetitive peak currentrating, or IFRM, than a boost optimizedSchottky diode or low forward voltageSchottky diode. With a low leakage devicethe forward voltage tends to rise veryquickly at currents above the rated DCcurrent. In return, the device cannothandle the large current spikes as well asthe other Schottky diodes.

ConclusionThe importance of defining Schottkydiodes based on power dissipation ratherthan individual device characteristics isnow even more important as the trade-offbetween forward voltage and reverseleakage is becoming larger. ONSemiconductor’s approach is an exampleof developing Schottky diodes based onpower dissipation that will allow systemdesigners to maximize battery lifetime inportable applications.

Figure 2: Power dissipation of different Schottky diodes

Drives & ControlsExhibition & Conference 2016The UK’s leading exhibition for Drives, Automation,Power Transmission and Motion Control Equipment

12-14 APRIL 2016 NEC BIRMINGHAMTo discuss exhibiting contact:Doug Devlin on: t: +44 (0) 1922 644766 m: +44 (0) 7803 624471 e: [email protected] Borrell on: t: +44 (0) 1732 370 341 m: +44 (0) 7818 098000 e: [email protected]

visit www.drives-expo.com

OnSemi_Feature_Layout 1 03/12/2014 14:50 Page 25

26 POWER SEMICONDUCTOR TESTING www.keithley.com


Challenges of Wide BandgapPower Semiconductor TestingDevices based on Silicon Carbide (SiC) and Gallium Nitride (GaN) can switch at much higher frequenciesand also have far lower leakage than Silicon, so at the same time as there is a need for sourcing highervoltages in testing, there is also a need for greater current measurement sensitivity. It can be quitechallenging to characterize these new devices at very low levels of current. DC instrumentation must becapable of characterizing significantly higher rated voltages and peak currents than ever before whileproviding the measurement resolution and accuracy characterizing these new materials demands.Mark A.Cejer, Marketing Director, Tektronix/Keithley Instruments, Cleveland, USA

Wide bandgap semiconductor materialslike Gallium Nitride (GaN) and SiliconCarbide (SiC) will be integral to thedevelopment of the next generation ofpower semi devices. Because they offerroughly a 10X advantage over traditionalSilicon in terms of conduction andswitching properties, they’re ideal forcreating power electronics, which are oftenused as switches or blocking devices.These advantages, in concert with theirhigher durability and reliability, make thesedevices invaluable for emergingapplications that depend on powerconversion efficiency, including hybridelectric and electric vehicles,alternative/renewable energy generationand storage, power supplies, motors anddrives, lighting, consumer electronics,household appliances, and many others.Devices like power diodes, thyristors,

power MOSFETs, and IGBTs fabricated withthese materials typically have higher powerdensity, smaller size, and lower on-resistance than those made of Silicon, allof which add up to greater operatingefficiency. They can also operate at highertemperatures, voltages, and frequencieswith lower power loss than Silicon devices.DC instrumentation must be capable of

characterizing significantly higher ratedvoltages and peak currents than everbefore while providing the measurementresolution and accuracy characterizingthese new materials demands. When thedevices are in the on-state, they have topass through tens or hundreds of ampswith minimal loss, which means theinternal resistance (Rds(on)) is very low;when they are off, they have to blockthousands of volts with minimal leakagecurrents, so the drain currents will be verylow. Consider that typical drain leakagecurrents on a SiC power FET might be onthe picoamp range, but an automatedpower device tester might be limited only

to resolving hundreds of nanoamps oreven microamps. Meeting this challengedemands a new generation of testhardware that is both more powerful andmore sensitive.

On-state characterizationA high current instrument capable ofsourcing high levels of current andmeasuring low-level voltages or resistancesis commonly used for on-state

characterization. If the device under test(DUT) has three terminals, a secondsource measure unit (SMU) instrument isused at the device control terminal toplace the device in the on-state. Figure 1illustrates a typical configuration forcharacterizing the on-state parameters of apower MOSFET. One of the most recognizable types of

test results for a semiconductor device is aplot of its output characteristics, which

Figure 1: Typical SMUconfiguration for on-state characterization

of power devices

Figure 2: Results fromperforming a pulsed

Rds(on) current sweep totest up to 50 A on a

power MOSFETdevice using a high-

power SMUinstrument. It is

possible to test up to100 A by connectingtwo high-power SMU

instruments inparallel

Keithley_Feature_Layout 1 03/12/2014 14:53 Page 26

www.keithley.com POWER SEMICONDUCTOR TESTING 27


depicts the relationship between theoutput voltage and current. Figure 2 showsRds(on) measurement data from a powerMOSFET device by using a pulsed currentsweep.Power semiconductor devices are often

high gain devices; oscillation is commonwhen characterizing such devices, whichcan result in erratic measurements.Verifying the presence of oscillationdemands source-and-measure instrumentswith high-speed A/D converters and theability to characterize pulse transientsaccurately. Resolving this oscillationinvolves adding a resistor in series with thedevice control or input terminal, forexample, the gate of a MOSFET or IGBT, sotest engineers often choose test fixtures(Figure 3) that can handle the high-powersignals involved as well as accommodatethe addition of a discrete resistor.

Off-state characterizationFor power semiconductor devices, off-statecharacterization often involves the use of ahigh voltage instrument capable ofsourcing hundreds or thousands of voltsand measuring small currents. Because it’soften performed between two device

to the gate and forces the transistor off. Itcan force 0 V for a gate shorted test orforce a user-specified bias voltage. A highvoltage SMU instrument, such as theModel 2657A, applies the necessary highvoltage to the drain and measures theresulting drain current.Leakage current is the level of current

that flows through two terminals of adevice even when the device is off, sominimizing leakage current minimizespower loss. While testing a power device’soff-state, it is generally desirable to test thedrain or collector leakage current, thevalues of which are typically on thenanoamp, picoamp, or even sub-picoamplevels. Figure 4 is a plot of off-state drainvoltage vs. drain current results for acommercially available SiC power MOSFET.

Future outlookSwitching power supplies are one of manypower conversion technologies that arebeginning to incorporate wide bandgapdevices. Optimizing the designs of theseproducts requires the use of higher-frequency tools. Oscilloscopes (Figure 5),high performance probes, and poweranalysis software are the AC tools ofchoice for characterizing components athigh frequencies, analyzing theperformance of a power conversiondesign, and understanding the source ofproblems. They make it possible tomeasure parameters like switching losses(turn-on, turn-off and conduction) andcharacterize the device’s operating region(Safe Operating Area, SOA). More technical details can be found in

the ‘Testing Power Semiconductor Devicesapplication note’(www.keithley.com/data?asset=57464).

terminals, a single SMUinstrument is oftensufficient to performthe measurement.However, anadditional SMUinstrument can beused to force thedevice into its off-stateor to add certain stressto certain terminals. Breakdown voltages and

leakage currents are the primaryDC tests performed when the device is off.A device’s off-state breakdown voltagedetermines the maximum voltage that canbe applied to it. The primary withstandingvoltage of interest to power managementproduct designers is the breakdownvoltage between drain and source of aMOSFET or between the collector andemitter of an IGBT or BJT. For a MOSFET,the gate can be either shorted or forcedinto a “hard” off-state, such as by applyinga negative voltage to an n-type device or apositive voltage to a p-type device. This is avery simple test that can be performedusing one or two SMU instruments. Thelower power SMU instrument is connected

ABOVE Figure 5: With up to 2 GHz bandwidthand 10 GS/s real-time sample rate, TektronixMSO/DPO5000B oscilloscopes offer theperformance needed to handle the fastswitching times seen in devices based on thenewer compound processes, including GaN andSiC. MSO/DPO5000B oscilloscopes can be usedwith the full range of Tektronix voltage andcurrent probes

LEFT Figure 4: A lookat the drain leakagecurrent as the drainvoltage is sweptwhile the transistor isin the off-state

RIGHT Figure 3: Keithley’sModel 8010 High Power Device

Test Fixture is designed fortesting packaged high power

devices at up to 3000V or 100A

Keithley_Feature_Layout 1 03/12/2014 14:53 Page 27

28 MOTION CONTROL www.QuickSilverControls.com, www.maccon.de


Motor and Resolver IntegratedThe Mosolver is an innovative closed-loop motion actuator which infuses a position feedback sensor intothe magnetic structure of a high pole count AC hybrid servo motor. The position sensor coils are placedwithin the motor structure so as to intercept a portion of the flux used to operate the motor. The ripplecurrent associated with the PWM drive provides the flux variation required to induce a voltage in the sensecoils. When properly sampled, the sensor output provides sine and cosine information similar to a resolver,and these signals are available even when the motor is stationary. Donald P. Labriola, QuickSilverControls Inc., USA, Edward Hopper, Maccon GmbH, Munich, Germany

High pole count Permanent Magnet ACsynchronous motors, when operated inopen loop, are called microstepper motors.The high pole count design producessuperior torque density, while the highlytooled production combined with the lowquantity of rare-earth magnets requiredresult in a low cost motor. Open loopoperation also typically uses very simplecontrol schemes. Unfortunately, whenoperated in open loop, these motors aresubject to low and mid frequencyresonances, lost steps, and drop-out. They

typically are used at one-third to one-halfof their torque rating, wasting significanttorque capability while also producingexcess heat.

These same motors, when operated in atrue closed loop mode, such as Vectorcontrol, are known as Hybrid Servos.Closed loop operation eliminates the lowfrequency resonance associated with therotor inertia interacting with the rotarymagnetic “spring” constant. Commutatingthe motor causes the stator field angle totrack the rotor position so as to produce

the maximum torque for a givencommanded current.

Mosolver constructionMicrostepper class motors are typicallyconstructed with the tooth spacing on thestator slightly different from that used bythe rotor to prevent all the teeth fromaligning simultaneously. The simultaneousalignment gives rise to large detent torqueas well as cogging. Figure 1 shows a typical52:50 tooth spacing. The teeth on statorare set at a slightly tighter angular spacing(as if there were 52 teeth) than those onthe rotor (with 50 teeth).

Figure 2 (left) shows the sense coilused in the 2-phase Mosolver tested. Forthis stator design, using sensing coils on alleight stator pole structures helps cancelout the effects of rotor runout andminimizes the number of turns requiredfor each sensor coil to get robust signals.Each sensor coil is split into four quadrantswith quadrants 1 and 3 being wound inthe clockwise direction while quadrants 2and 4 are wound in the counter clockwisedirection. The voltage produced by aparticular quadrant of the sense coil isdependent upon the number of turns ofthat coil, and the rate of change of the flux

Figure 1: Sense coilsand rotor-statoralignment

Figure 2: Sense coil implemented as a flex circuit used in the 2-phase Mosolver

Maccon_Feature_Layout 1 03/12/2014 14:55 Page 28

www.QuickSilverControls.com, www.maccon.de MOTION CONTROL 29


passing through that coil window, while thepolarity is affected by both the sign of therate of change of the flux and by thedirection in which the coil is wound.

The total voltage produced by the sensecoil depends on the division of the statorflux (and thus ripple) into different groupsof teeth passing through the various sensecoil loops, the division being moderated bythe relative overlap of the stator teeth tothe rotor teeth. With the sense coils insectors 1 and 3 wound in the oppositedirection compared to sectors 2 and 4, theoutput signal resulting is related to thedifference in the rate of change of fluxthrough sectors 1 and 3 versus thatthrough 2 and 4.

Physically, the sense coils wereimplemented as a flex circuit which isinserted into the stator before the rotor isinserted. The sensor is completelycontained in the otherwise unused spaceswithin the stator structure and thusprotected mechanically. The total weight ofthe system increases only minimally, andmay actually be reduced due to thematerial removed to produce the groove inwhich the coil lays. As no material is addedto the rotor, its inertia is not changed.

Sensor dataFigure 3, left and middle frames, showsthe analog signals from the sensor coilsignals after they have been multiplied by3 by a differential amplifier. These signalsare then sampled by the internal A/D

converter. The sampling times areconfigured to take data at the end of thereverse pulse (just before the drivertransitions to the forward pulse), and againabout the same time into the forwardpulse. This is done for both channels. ThePWM logic must prevent multiple drivertransitions while in the read window whilestill providing the PWM signals needed toproduce the commanded torque for thesystem.

Figure 3 right shows the sampled datafrom the Sine and Cosine windings takenwhile the Mosolver is rotating. Thesesignals are decoded into angle by the DSP(processor). The absolute angle within anelectrical cycle provides sinusoidalcommutation information for the motor,and does not require phasing adjustmentsas the same magnetic structure for themotor is used for the sensor. Thiselectrical cycle repeats 50 times permechanical revolution of the rotor withinthe stator. The processor extends thecounts from each electrical cycle to trackposition over multiple revolutions of themotor. Each electrical cycle is divided into640 increments producing 32000increments per revolution. One electricalcycle (7.2 degrees mechanical) is shown.The Y axis is ADC counts, the X axis istime.

ConclusionsThe shared use of the magnetic structureof a motor for both torque production and

for position measurement has been showneffective and viable from stationaryoperation up to 4000 RPM. The resultingstructure is compact and physically robustwith the sensor completely envelopedwithin the motor structure. The signals arerobust and the position sensing showsgood resolution. The sensor is inexpensive,and there is very little impact on theelectronics complexity for the digital drive.Phasing alignment of the sensor forcommutation is not needed as the motorand sensor share the same magneticstructure.

This patented method has now beendemonstrated in high pole count motors,and is also applicable to many other motorstyles by appropriate placement of thesensor coils. The availability of inexpensive,compact, and robust position feedback inhigh pole count motors invites a transitionto the improved performance of closedloop operation in a market segmentcurrently dominated by open loopoperation. The high torque densityprovided also allows these Hybrid Servosto also push up into the existing servosmarket segment through reduced size andcost, and the frequent elimination ofgearheads.

LiteratureDonald P. Labriola “Mosolver™ -

Integrated Motor and Resolver –Operational”, PCIM Europe 2014Proceedings, pp. 227-232

Figure 3: Analog signals from the sensor coil signals after they have been multiplied by 3 by a differential amplifier (left, middle), and sampled data fromthe Sine and Cosine windings taken while the Mosolver is rotating

To receive your own copy of

Power Electronics Europe subscribe today at:

www.power-mag.com

Maccon_Feature_Layout 1 03/12/2014 14:55 Page 29

30 PRODUCT UPDATE

In conventional converter-based power drive systems with long motor cables,very high earth leakage currents can occur in standard 3-phase industrialpower grids. They are caused by capacitive coupling between the EMC inputfilter, the frequency converter, the motor cable and the motor itself. TheEPCOS LeaXield™ is designed to minimize earth leakage currents byconnecting between the grid and the EMC input filter. LeaXield detects thecommon-mode currents on the load-side via a current sensing transformer. Itthen feeds an inverse of these currents via an amplifier and a capacitornetwork to the power line to produce almost complete cancellation of theleakage currents. It is suitable for all applications, in which converter-generatedleakage currents can trip the RCD, especially in the frequency range from 1kHz to approximately 500 kHz. LeaXield is now designed for rated currents ofup to 150 A for 3-phase grids at frequencies of 50/60 Hz and a rated voltageof 520 V AC. The new active filter can be used in systems with leakagecurrents of up to 1000 mA. The LeaXield module can be retrofitted to existingconverter-based installationsin order to improve the EMCand the RCD compatibilityand can be integrated intonew EMC filter solutions inorder to downsize theexpensive current-compensated filter chokes.

www.epcos.com

New 1200 V IGBT PlatformIR’s new generation 8 (Gen8) 1200V IGBT platform utilizes trench gatefield stop technology and is available with current ratings from 8 A up to60 A with typical VCE(ON) of 1.7 V and a short-circuit rating of 10 µs. Thenew technology offers softer turn-off characteristics ideal for motor driveapplications, minimizing dv/dt to reduce EMI, and over-voltage, increasingreliability and ruggedness. A narrow distribution of parameters offersexcellent current sharing when paralleling multiple IGBTs. The thin wafertechnology delivers improved thermal resistance and maximum junctiontemperature up to 175°C. Pricing for the IRG8P08120KD begins at US$3.05 in 10,000-unit quantities.

www.irf.com

Analog Devices introduced two components that work together as anintegrated analog controller to offer energy recycling for rechargeable batteryformation and grading system solutions. The AD8450/1 analog front-end andcontroller, and the ADP1972 buck/boost PWM controller provide energyefficiency benefits in the charging and discharging cycles, both as the current is

provided througha PWM controlleras well as when itis directed backto the grid or tocharge other cells.Unique to thistwo-devicearchitecture is theuse of analogcontrol loops,which offersignificantbenefits over thecurrent digitalsolution. Thesebenefits includefaster control of

up to 1.5 MHz for the critical signal path, greater than 90 percent efficiencyand higher accuracy over temperature. The solution is designed for batteryformation and grading systems for medium- and high-energy batteries used inhybrid and electric vehicles, energy storage and industrial tools. Other benefitsof include the ability to share lower-cost precision D/A converters and A/Dconverters over multiple channels. The addition of synchronization with phase-shifting between channels reduces input filtering. Also, the solution minimizesthe need for complex coding and cuts system calibration time in half. Bothsynchronous and non-synchronous architectures are available.

www.analog.com/AD8450

1 kV Power SwitchFairchild introduced at Electronica the 1000 V integrated power switch, offeringthe industry’s highest breakdown voltage in a single package for designingreliable SMPS for smart meter, appliance and industrial systems. TheFSL4110LR integrates a VDMOS SenseFET with built in line compensation forwide input voltage range from 45V AC to 460 V AC. It also includes built- ininput over voltage protection and a safe auto-restart mode for all protectionconditions. The device provides Abnormal Over Current Protection (AOCP),which protects the power converter from transformer abnormalities and isparticularly important for smart metering applications. The FSL4110LR is asolution for flyback converters that need to meet three phase input voltage orunstable single phase input voltage requirements.

www.fairchildsemi.com

Analog Controller OptimizingRechargeable Battery

600 V Fast Body Diode N-Channel MOSFETsVishay Intertechnology introduced the first two devices in its new 600V EF Series (Siliconix SiHx28N60EF and SiHx33N60EF) of fast bodydiode n-channel power MOSFETs. Offered in four packages, the 28 ASiHx28N60EF and 33 A SiHx33N60EF feature ultra-low on-resistanceof 123 � and 98 �, respectively, and low gate charge. These valuestranslate into extremely low conduction and switching losses to saveenergy in high-power, high-performance switch mode applications.The devices increase reliability in these applications by offering a 10xlower reverse recovery charge than standard MOSFETs. This allows thedevices to regain the ability to block the full breakdown voltage morequickly, helping to avoid failure from shoot-through and thermaloverstress.

www.vishay.com/doc?91600

Active Filter MinimizesLeakage Currents


Product Pages_0814._Layout 1 03/12/2014 15:43 Page 30

Contact: Ian Atkinsonon +44 (0)1732 [email protected]

Direct

� E-CAMPAIGN � LIST RENTAL � LEASE

TARGET YOUR BUYERSFROM OVER 60,000 QUALIFIED CONTACTS

DFA_Direct_NEW_Layout 03/12/2014 15:31 Page 1

32 PRODUCT UPDATE


Three-Level Power ModulesVishay Intertechnology introduced four new IGBT power modules designedspecifically for string solar inverters and medium power range UPS. CombiningUltrafast Trench IGBTs, high-efficiency HEXFRED® and FRED Pt® diodetechnologies, and thermistors for easy thermal management in singlepackages featuring pressfit technology, the offer integrated solutions for 3-levelNPC topologies and interleaved multiple-channel MPPT boost converters. For3-level NPC topologies, the VS-ENQ030L120S provides a collector-to-emitterbreakdown voltage of 1200 V and a collector current rating of 30 A. Designedfor 3-level inverter stages, the VS-ETF075Y60U and VS-ETF150Y65U offer

designers achoice of 75 Aand 150 Acollector currentratings and 600V and 650 Vcollector-to-emitterbreakdownvoltages,respectively, and

provide high-temperature performance to +175 °C. Optimized for doubleboost converters, the 15 A VS-ETL015Y120H features a collector-to-emitterbreakdown voltage of 1200 V, high-efficiency Silicon boost diodes, integrated62 A bypass diodes, and panel short-circuit full-current reverse polarityprotection diodes. The devices provide low internal inductance and switchinglosses, while offering operating frequencies up to 20 kHz.

www.vishay.com/modules/igbt-modules/sales

Intersil introced the ISL8240M, a dual 20 A/single 40 A step-down powermodule that is capable of delivering up to 100 W of output power in a 2.9cm2 footprint. Thus the ISL8240M provides designers with a turnkey DC/DC

convertersolution for highcurrentapplications. TheISL8240M is pin-to-pincompatible withthe company’sISL8225M 30Apower module,expanding the

output current to 40 A and delivering up to 100 W output power. This offersdesigners a high level of flexibility, enabling a single PCB design acrossplatforms. The ISL8240M is also capable of delivering up to 240 A outputwhen six modules in parallel operation are current shared. Input voltage rangecovers 4.5 V to 20 V and adjustable output ranges from 0.6 V to 2.5 V. TheISL8240M power module is priced at $39.85 each in 1,000-piece quantities.The ISL8240MEVAL3Z and ISL8240MEVAL4Z provide an evaluation platformfor the ISL8240M and are priced at $88.00.

www.intersil.com/products/ISL8240m

Texas Instruments introduced six AEC-Q100-qualified gate drivers with shortpropagation delays of less than 15 ns. The UCC275xx-Q1 family of single- anddual-channel gate drivers provides high power efficiency, reliability andflexibility for applications such as powertrain, bi-directional converters (12- to48-V and 12- to 400-V input), onboard charging, traction inverters, advanceddriver assistance systems (ADAS), safety, headlamps and instrumentationclusters. With peak currents ranging from 2.5 A to 5 A and propagation delaysof less than 15 ns, these automotive output-stage drivers can replace discretetotem pole solutions. The temperature range of -40°C to 140°C and negativeinput voltage of -5 V enables handling of ground bouncing experienced inharsh environments. By supporting 4.5 V to 35 V wide bandgap switches suchas SiC MOSFETs and IGBTs can be switched that are capable of withstandinghigh temperatures without compromising efficiency. Additionally, the invertingfunctions of the UCC27518A-Q1 and UCC27519A-Q1, and non-invertingfunctions of the UCC27531-Q1, UCC27517A-Q1, UCC27519A-Q1 andUCC27524A-Q1 add the flexibility to handle different types of inputs.

www.ti.com/ucc27531q1-pr-eu

High Power Density DC/DC Module

Automotive Gate Drivers

Texas Instruments offers the first 24 V, sinusoidal, sensorless, brushless DC(BLDC) motor driver. The DRV10983 gives customers the ability to quicklytune their motors for reliable start-up and optimal performance using aconfigurable, 3-A driver with integrated control logic. Utilizing 180-degree,sinusoidal, sensorless technology, the DRV10983 delivers up to 75 % quietersolutions for applications like cooling fans, ceiling fans, blowers and smallappliances. The 180-degree operation, coupled with advanced start-upalgorithms, enables quieter operation with no annoying clicks or pops at start-up. Pure tone harmonics, a significant noise adder in fan applications, arereduced by as much as 25 dBA. The single-chip solution with integratedpower FETs, sensorless control logic and optional 100-mA, 3.3- or 5-V step-down converter reduce board space, system cost and development time. TheDRV10983EVM evaluation module is a cost effective, sensorless solution forrunning three-phase BLDC motors. It includes a BLDC motor and comescomplete with a graphical user interface (GUI), schematics and Gerber files.

www.ti.com/drv10983-pr-eu

Sensorless 24 V DC Motor Driver

Product Pages_0814._Layout 1 03/12/2014 15:43 Page 32

WEBSITE LOCATOR 33


AC/DC Connverters

www.irf.comInternational Rectifier Co. (GB) LtdTel: +44 (0)1737 227200

Diodes

Discrete Semiconductors

Drivers ICS

EMC/EMIwww.microsemi.comMicrosemiTel: 001 541 382 8028

Ferrites & Accessories

GTO/Triacs

Hall Current Sensors

IGBTs

DC/DC Connverters


www.power.ti.comTexas InstrumentsTel: +44 (0)1604 663399


www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200

Harmonic Filters

www.murata-europe.comMurata Electronics (UK) LtdTel: +44 (0)1252 811666

Direct Bonded Copper (DPC Substrates)

www.curamik.co.ukcuramik� electronics GmbHTel: +49 9645 9222 0


www.mark5.comMark 5 LtdTel: +44 (0)2392 618616

www.dgseals.comdgseals.comTel: 001 972 931 8463

www.microsemi.comMicrosemiTel: 001 541 382 8028


www.digikey.com/europeDigi-KeyTel: +31 (0)53 484 9584


www.dextermag.comDexter Magnetic Technologies, Inc.Tel: 001 847 956 1140



www.protocol-power.comProtocol Power ProductsTel: +44 (0)1582 477737

Busbars

www.auxel.comAuxel FTGTel: + 33 3 20 62 95 20

Capacitors

Certification

www.psl-group.uk.comPSL Group UK Ltd.Tel +44 (0) 1582 676800

Connectors & Terminal Blocks

www.auxel.comAuxel FTGTel: +44 (0)7714 699967

www.productapprovals.co.ukProduct Approvals LtdTel: +44 (0)1588 620192

www.proton-electrotex.com/ Proton-Electrotex JSC/Tel: +7 4862 440642;

www.voltagemultipliers.com Voltage Multipliers, Inc.Tel: 001 559 651 1402


Arbitrary 4-Quadrant PowerSources

www.rohrer-muenchen.deRohrer GmbH Tel.: +49 (0)89 8970120

Website Locator(9)_p41-42 Website Locator 03/12/2014 15:55 Page 33

34 WEBSITE LOCATOR


Power Modules

Power Protection Products

Power Semiconductors

Power Substrates

Resistors & Potentiometers

RF & Microwave TestEquipment.

Simulation Software

ThyristorsSmartpower Devices

Voltage References

Power ICs

Power Amplifiers

Switches & Relays

Switched Mode PowerSupplies

Switched Mode PowerSupplies

Thermal Management &Heatsinks


www.rubadue.comRubadue Wire Co., Inc.Tel. 001 970-351-6100







www.fujielectric-europe.comFuji Electric Europe GmbHTel: +49 (0)69-66902920



www.ar-europe.ieAR EuropeTel: 353-61-504300



www.universal-science.comUniversal Science LtdTel: +44 (0)1908 222211

www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399


www.dau-at.comDau GmbH & Co KGTel: +43 3143 23510

www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399




www.isabellenhuette.deIsabellenhütte Heusler GmbH KGTel: +49/(27 71) 9 34 2 82

ADVERTISERS INDEX

Mosfets

Magnetic Materials/Products

Line Simulation

Optoelectronic Devices


Packaging & Packaging Materials



www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200



www.biaspower.comBias Power, LLCTel: 001 847 215 2427

www.digikey.com/europeDigi-Key Tel: +31 (0)53 484 9584


www.digikey.com/europeDigi-Key Tel: +31 (0)53 484 9584






www.abl-heatsinks.co.ukABL Components LtdTel: +44 (0) 121 789 8686

www.hero-power.com Rohrer GmbH Tel.: +49 (0)89 8970120

www.rohrer-muenchen.deRohrer GmbHTel.: +49 (0)89 8970120


BB.....................................................................7

APEC................................................................9

DFA Media ........................................12 & 31

Drives & Controls 2016 .............................15

European Offshore Energy 2016 ............21

Fuji Electric .....................................................4

HKR................................................................13

International Rectifier ............................OBC

LEM................................................................13

PCIM 2015..................................................IBC

Semikron.....................................................IFC

Toshiba Electronics.....................................11


Website Locator(9)_p41-42 Website Locator 03/12/2014 15:55 Page 34

Power meets electronics – Join the PCIM Europe!

Your market place for power electronics

International Exhibition and Conferencefor Power Electronics, Intelligent Motion,Renewable Energy and Energy ManagementNuremberg, 19 – 21 May 2015

More information at +49 711 [email protected] or pcim-europe.com

35_pee_0814_Layout 03/12/2014 15:28 Page 1

Part NumberVDS

(V)

RDS(on) Max. VGS=10V

(m )

ID

(A)QG

(nC)Package

IRF7739L2 40 1 270 220 DirectFET-L8

IRFB7430 40 1.3 409 300 TO-220

IRFH7004 40 1.4 259 129 PQFN 5X6 mm

IRFS7440 40 2.5 208 90 D2PAK

IRFS3006-7 60 2.1 240 200 D2PAK-7

IRFS3006 60 2.5 195 200 D2PAK

IRFH5006 60 4.1 100 67 PQFN 5x6 mm

IRF7749L2 60 1.3 108 220 DirectFET-L8

IRFB3077 75 3.3 210 160 TO-220

IRFH5007 75 5.9 100 65 PQFN 5x6 mm

IRF7759L2 75 2.2 83 220 DirectFET-L8

IRFP4468 100 2.6 195 360 T0-247

IRFH5010 100 9 100 65 PQFN 5x6 mm

IRF7769L2 100 3.5 124 200 DirectFET-L8

IRFS4010-7 150 4 190 150 D2PAK

IRFS4010 150 4.7 180 143 D2PAK

IRFH5015 150 31 56 33 PQFN 5x6 mm

IRF7779L2 150 11 67 97 DirectFET-L8

IRFP4668 200 9.7 130 161 T0-247

IRFH5020 200 59 41 36 PQFN 5x6 mm

IRFP4768 250 17.5 93 180 T0-247

IRFH5025 250 100 32 37 PQFN 5x6 mm

IRF7799L2 250 38 35 110 DirectFET-L8

Your FIRST CHOICEfor Performance

For more information call +49 (0) 6102 884 311or visit us at www.irf.com

Features

• Low on resistance per silicon area

• Optimized for both fast switching and low gate charge

• Excellent gate, avalanche and dynamic dv/dt ruggedness

The IR Advantage

• Best die to footprint ratio

• Large range of packages

• Available from 40 V to 250 V

Applications

• DC Motor Drives

• Uninterruptible Power Supplies (UPS)

• DC-DC Converters

• Power Tools

• Electric Bikes

Rugged, Reliable MOSFETsfor Industrial Applications

THE POWER MANAGEMENT LEADER

36_pee_0814_Layout 03/12/2014 15:29 Page 1

Documents

Power Modules to the Rescue · to market researcher IHS, the global power semiconductor market (discretes and modules) in 2013 was valued at more than $15 billion. In 2012 International