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Proceedings of theXIII International Workshop
on
Physics of Semiconductor Devices(IWPSD - 2005)
December 13-17, 2005
Vol. II
Editors:Vikram KumarS.K. AgarwalS.N. Singh
TECh'NISCHEINFORMATIONSBIBLIOTHEK
UNIVERSITATSBIBLIOTHEKHANNOVER
National Physical LaboratoryNew Delhi
ALLIED PUBLISHERS PVT. LIMITED
New Delhi • Mumbai • Kolkata • Lucknow • ChennaiNagpur • Bangalore • Hyderabad • Ahmedabad
Contents
Vol. IICo-Sponsors v
Preface vii
Section E: High Frequency Devices
Invited Papers
133. Material Issues in High-Frequency GalnP/GaAs 741Heteroj unction Bipolar TransistorsShinji Nozaki, Hiroshi Ono, Kazuo Uchida and Hiroshi Morisaki
134. Effect of Transition Metal Ion Doping on the Electrical, 748Optical and Magnetic Properties of ZnOShubra Singh, N. Rama and M.S. Ramachandra Rao
135. Liquid Junctions to Wide Bandgap Semiconductors 750Erhard Kohn, Andrej Denisenko, T. Ive, Oliver Brand, Armin Dadgar,Alois Krost and Werner Haenni
136. Device Performance Variations in 20 nm Tri-Gate Finfets 760Chaitanya Kshirsagar, Anuj Madan and Navakanta Bhat
137. Anode Engineering for the Insulated Gate Bipolar Transistor- 767A Unified ViewDavid W. Green, K.V. Vershinin, M. Sweet and E.M. Sankara Narayanan
138. Terahertz Spectroscopy Using High Power and Wide Frequency 775Range GaP Raman Terahertz (GRT) GeneratorJun-ichi Nishizawa and Tetsuo Sasaki
139. High-Frequency Noise of MOSFETS - Characterization and 787ModelingChih-Hung Chen
140. On the Reliability of U-Shaped Trench-Gated Metal-Oxide-Silicon 796Field-Effect TransistorsO.O. Awadelkarim, S.A. Suliman, K. Sarpatwari, L. Passmore,R.S. Ridley and G.M. Dolny
141. Modeling and Characterisation of High Frequency Effects in 804VLSI InterconnectsNarain D. Arora
Contributed Papers
142. A Novel way to Reduce Conduction Current in 817ALO.7GAO.3AS/GAAS Heterostructure Barrier VaractorsDibakarRoy Chowdhury Mustafa Saglam, Kabula Mutamba andHans L. Hartnagel
143. Design Consideration for Sub-MM Wave Silicon DDRS 822Including Drift, Diffusion and Tunnel CurrentsS.P. Pati and P.R. Tripathy
144. An Analytical Model for I-V Characteristics of Sub-Micron 826GaN MESFET Using an Exact Velocity Field Dependence forMicrowave ApplicationsSneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta andR.S. Gupta
145. Analytical Model for Negative Differential Conductivity of 830ALGAN/GAN High Electron Mobility TransistorR. Yahyazadeh, A. Asgari and M. Kalafi
146. Shannon-Implantation Control of Gate-Edge Field Initiated 835GaAs-MESFET Breakdown VoltageY. Kumar, V.K. Tandon and S. Sarkar
147. Design and Simulation of Logic Gates at Room 839Temperature using Single Electron TransistorsA. Venkataratnam and A.K. Goel
148. Thermal Conduction in G A N Crystals 843M.D. Kamatagi, N.S. Sankeshwar and B.G. Mulimani
XI
149. Pulse Reversal Electrodeposition for Fine-Grained Structure 847and Superior Wire Bond Strength in Metallisation of MMICsG. Sai Saravanan, Sandeep Chaturvedi, S.D. Prasad, Sangam Bhaike,K. Muraleedharan, H.S. Sharma and H.P. Vyas
150. Influence of Oxygen Plasma Treatment on the Uniformity of 852Activation of Rapid Thermal Annealed GaAs WafersG. Sai Saravanan, M.N. Mudholkar, Mahadeva BhatK,Vijay V. Subraveti, A.V.S.K. Rao, K. Muraleedharan,A.P. Pathak and H.P. Vyas
151. 4H-SiCVS6H-SiC for Realisation of Impatt Diode 857
S.R. Pattanaik, G.N. Dash and S.K. Swain
152. Low-Power Auto-Focusing Calculation Method using 861Mid-Frequency DCT Operator for Mobile PhoneS.Y. Lee, S.S. Park, T.T. Hoang, Y. Kumar, S. W. Kim,J.G. Lee, J.S. Moon, J.H. Moon and C.S. Kim
153. An Accurate and Efficient Method for Small Signal 865Parameter Extraction for MESFETsZameer Iqbal, Ashok Kumar, Sudhir Kumar, R. K. Khatri, H. P. VyasShivam Priyadarshi, C. Parikh. and D. Nagchaudhari
Section F: Organic Semiconductors
Invited Papers
154. Photoconduction in Alq3 873
Debdutta Ray, Meghan P. Patankar, N. Periasamy and K. L.Narasimhan
155. A Step Towards Molecule Based Nanoelectronics: Electronic 878Transport Through Single Molecule using NanoelectrodesSubhasis Ghosh
156. Solar Cells with Organic Molecules and 884Conjugated PolymersRavi Mosurkal, Sandip Sengupta and Jayant Kumar
157. Recent Trends in Conjugated Polymer Solar Cells 891
P.K.Bhatnagar, Sukhbinder Singh Rait, Shipra Kashyap and PC. Mathur
XII
158. Surface Polarisation Phenomena of Organic Monolayers as 898a Two-Dimensional System and its Application to OrganicElectronic DevicesMitsumasa Iwamoto and Takaaki Manaka
Contributed Papers
159. Light Emitting Devices with Triple Layer Structure of Small 911Organic MoleculesKanchan Saxena, Ritu Srivastava, M. N. Kamalasanan and Dalip Singh Mehta
160. PANLLDPE Conducting Composites: Synthesis, 915Characterisation and ApplicationsS.K. Dhawan, R. Rathore, P. Saini, M.N. Kamalasannan and S.S. Bawa
161. Insitu Polymerization of Conducting Polymers in the 920Presence of Nano Ferromagnetic ConstituentsNirmala Meena, Nikhil Sobti, Kuldeep Singh, Parveen Saini, R.K. Kotnala,R.P. Pant, S.K. Dhawan, S.S. Bawa and PC. Kothari
162. Effect of Semiconductor Thickness on the Device 925Characteristics of Organic Thin Film TransistorsMade of PentaceneDipti Gupta, Monica Katiyarand Deepak
163. Design and Synthesis of Processable Polyanilines for 930Technological ApplicationsParveen Saini, Kuldeep Singh, S. K. Dhawan and S. S. Bawa
164. Doping of Iron (II) Phthalocyanine With TiO, For Improving 935Response to Wider Dose Range of Gamma RadiationM.S. Roy, Anil Gautam, Narottam Prasad, Manish Kumar,Y.S. Deo/ and G.D. Sharma
165. Electrical Switch With High ON-OFF Ratio Based on 939Field Induced Conductance Transition in Organic Thin FilmsRuchi Agrawal and Subhasis Ghosh
XIII
166. Electrical and Morphological Characterisation of Sulfamic 943Acid Doped Polyaniline-PVC FilmsVazid AH, Fozia Z. Haque, Pushplata Tripathi, Vilakshan Singh,Z. H. Zaidi and M. Husain
167. Synthesis and Characterisation of Te Doped Polyaniline 948
Samrana Kazim, Vazid AH, M. Zulfequar, M. Mazharul Haq and M. Husain
168. Electrical Conductivity and Dielectric Properties of 952Sulfamic Acid Doped PolyanilineSadiaAmeen, Vazid AH, M.Zulfequar, M.Mazharul Haq and M.Husain
169. Electrical and Photovoltaic Response of Bulk Hetero-Junction 956Device Made From Poly (3-Phenylhydrazone Thiophene )( PPHT ) and Viologen (VOL)G. D. Sharma, Shailendra Kumar Sharma, Raj Kumar and M. S. Roy
170. Charge Generation Process and Photovoltaic Effects in 961Dye-Sensitised Iron Phthalocynine Based Thin Film DeviceM. S. Roy, Vijay Singh, Manish Kumar, Narottam Prasad and G. D. Sharma
171. Green Emission From Organic Light Emitting Diode Based 965on a Magnesium ComplexApama Misra, Pankaj Kumar, Lokendra Kumar, Nikhil Ganesh,Mohit Gupta, S. K. Dhawan, M. N. Kamalasanan and Subhas Chandra
172. Effect of Substrate Preparation on Performance of Indium 970Tin Oxide / Poly (3-Hexylthiophene 2,5-diyl) / AluminiumThin Film DevicesRashmi, Jaya, Praveen Saho, Upendra Kumar, Vanita Agarwal,Ashok Kapoor, V. R. Balakrishnan and P. K. Basu
173. Fabrication, Characterisation and Applications of 974Polymer Solar CellsRaghubir Singh Anand, Anjali Giri And Ramesh Prasad
174. SensitisationofTiO2 Quantum Dots in Micro-Emulsion 978by Photoexcited Dye MoleculesH. N. Ghosh, M. C. Rath, G. Ramakrishna, D. K. Palit and T. Mukherjee
XIV
175. Charge Transfer Pair Formation in Thin Film of 982Porphyrin-Cyanine ComplexDebdutta Ray, Jaykrushna Das, Pabitra K. Nayak, Meghan P. Patankar,N. Periasamy and K.L. Narasimhan
176. Nature of Electron and Hole Current in 986ITO/PEDOT/MEH:PPV/Ca-Al Polymer Light Emitting DiodesT.Manojaya, Asha Awasthi and J.Narain
Section G: Modeling and Simulations
Invited Papers177. Non-Uniformly Doped Gate Electrode Workfunction 995
Engineered MOSFET: Novel Design Architecture forControlling Short Channel Effects and ImprovingGate Transport EfficiencyR.S. Gupta, Kirti Goel, ManojSaxena andMridula Gupta
178. Modeling of Resistivity and the Temperature Coefficient of 1003Resistivity of Heavily Doped PolysiliconEnakshiBhattacharya, Manjula S.R., Teweldebhran Kifle and K.N. Bhat
179. Modeling of the Electrical Effect of Dislocations in HgCdTe 1013Infrared PhotodiodesVishnu Gopal and Sudha Gupta
Contributed Papers
180. Strained-Si MOSFETs for RF Applications 1025A.R. Saha, S.S. Mahato and C.K. Maiti
181: Threshold Voltage Model for Short-Channel MOSFETS 1030with Quantum EffectsTina Mangla, Amit Sehgal, Mridula Gupta and R.S. Gupta
182. AC Performance of Germanium n-MOSFETs 1035A.R. Saha, S.S. Mahato and C.K. Maiti
XV
183. Poly-Crystalline Silicon Thin Film Transistor: Modified 1040Schottky Gate Contact for Enhanced Gate Transport EfficiencyAmit Sehgal, Tina Mangla, Sonia Chopra, Mridula Gupta and R. S. Gupta
184. Impact Ionisation Model for Kink Effect in Poly-Si TFTs 1045Navneet Gupta and B.P. Tyagi
185. On Occurrence of Random Variation in Series Resistance 1049of Elementary Diodes in Inhomogeneous Schottky ContactsSubhash Chand and Atul Kapil
186. Ultra-High Frequency Modeling of Carbon Nanotube Field-Effect 1055Transistors (CNT-FETs)Jose M. Marulanda, Ashok Srivastava and Rajendra K. Nahar
187. Modeling of Velocity-Field Characteristics in 1060Strained SiliconS. Dhar, G. Karlowatz, E. Ungersboeck, H. Kosina, and S. Selberherr
188. Analytical Model oi Strained-Si/SiGe/Si PMOSFET for 1064Circuit SimulationB. Bindu, Nandita Dasgupta and Amitava Dasgupta
189. Prospects of IR Material ZnS for High MM-Wave Power 1069Generation in Impatt ModeS.P. Pati, PR. Tripathy and R.K. Mishra
190. Surface Trapping in Small Area Devices and Low-Frequency 1073Noise in Submicron MOSFETSK.K.Ghosh
191. Process-Induced Strain Engineering Beyond 90 nm 1077Technology NodeA. R. Saha, S. S. Mahato and C. K. Maiti
192. Temperature Dependence of Compact Alpha Power 1082MOSFET Model ParametersA.B. Bhattacharyya, Gajanan Dessai, Chumki Saha,Sandeep Sharma, Amit Singh and D. N. Singh
XVI
193. Silicon Carbide Vertical JFET Operated in Bipolar 1086Mode (BMFET) - A Two-Dimensional Simulation Stud>M. Jagadesh Kumar and Amit Ojha
194. Exact Numerical Analysis of an Extracted IR-Photodiodes 1090M. Karimi, A. Asgari and M. Kalafi
195. A New Method to Model Carrier Diffusion and Surface 1094Recombination in VCSELsManmohan Singh Shishodia, G.B.Reddy and Anurag Sharma
196. A New Kink-Free High Voltage Vertical Submicron 1099N+PN BJT on SOI with Three-Zone Step DopedLateral Collector (VSLC)S. D. Roy and M. Jagadesh Kumar
197. Novel Attributes of Nanoscale Grooved Double Gate (GDG) 1104SOI MOSFET: Two Dimensional Simulation StudyM. Jagadesh Kumar and Poornima Agarwal
198. SiGe S ALTran: A Superbeta Bipolar Transistor 1108M. Jagadesh Kumar and Preeti Singh
199. Simulation of Quantum Effects in Nanoscale Double 1111Gate MOSFETs with 2D ElectrostaticsD. Datta, S. Ganguly, A.A. P. Sarab and S.Dasgupta
200. A Novel Dual Material Surrounding Gate (DMSG) 1116Nanoscale MOSFETHarshit Dhakad and M. Jagadesh Kumar
201. Compact Modeling of Parasitic Internal Fringe Capacitance 1121and its Effect on the Threshold Voltage of High-K GateDielectric SOI MOSFETsVivek Venkataraman, Sumeet Kumar Gupta and M. Jagadesh Kumar
202. Performance Considerations of a Novel MOSFET 1125Architecture: Symmetrical Double Gate with ElectricallyInduced Source/DrainAH A. Orouji and M. Jagadesh Kumar
XVII
203. Investigation of Latch-up Failure of CMOS RS232 1131Transceivers in Telecommunication Systems - A Case StudyV.Lakshminarayanan
204. A New Thin-Film High Voltage Lateral Schottky Collector 1136BJT on SOIS. D. Roy and M. Jagadesh Kumar
205. Enhanced Breakdown Voltage and Reduced Self-Heating 1141Effect in Thin-Film Lateral Bipolar Transistor on SOI
S. D. Roy and M. Jagadesh Kumar
.206. A Novel CMOS Compatible LDMOS Based On (FLI) and 1145(ODBR) MOSFET Concept
Rakesh Vaid and Naresh Padha
207. An Analytical Two-Dimensional Model for Graded Channel 1150Fully Depleted Cylindrical/Surrounding Gate Soi MOSFETs
Harsupreet Kaur, Sneha Kabra, Simrata Bindra, Subhasis Haldar and R.S.Gupta
208. Technology CAD of Si Schottky-Barrier MOSFETs 1155
A. R. Saha, S. S. Mahato and C. K. Maiti
209. Modeling of the Electroluminance Behavior of Blue 1159Emitting SrS: Ce ACTFEL Devices with Multiple
Interface Energy States
IS. Dhillon and V.P Singh
210. Investigating the Role oi Stacked Gate Oxide and 1163Hetro-Material Gate on Electrical Characteristics of Insulated
Shallow Extension (ISE) MOSFET
Ravneet Kaur, Manoj Saxena, R. S. Gupta
Section H: Growth and Characterisation
Invited Papers •211. Quantitative Evaluation of the Interface Trap Density in 1171
Nanometer-Thick SiGe/Si Heterostructures by Low-TemperatureCharge Pumping Technique
Toshiaki Tsuchiya, Masao Sakuraba and Junichi Murota
XVIII
212. Micro-Raman Analysis of ION Implanted and Plasma 1176Hydrogenated Czochralski Silicon WafersR. Job, Y. Ma, W. Dungen, Y. L. Huang and J. T. Horstmann
213. Performance of Crystals; Operational Characteristics of 1184Mercurous Bromide Crystals for Acousto-Optic ApplicationsD. J. Knuteson, N. B. Singh, N. Gupta , M. Gottlieb, D. Suhre,A. Berghmans, D. Kahler, B. Wagner, C. Lears and J. J. Hawkins
214. Catalytic Applications of Hydrogen in Silicon Processing 1189
Aniruddha A. Vengurlekar and S. Ashok
215. Characterization of Silicon-on-Insulator and SiC Wafers by the 1197Microwave Reflectance Photoconductivity Decay ((i-PCD)Method with UV ExcitationMasaya Ichimura and Masashi Kato
216. Thermophysical Properties of Various Transparent Conductive 1204Oxide Films Obtained by Thermoreflectance TechniqueTakashi Yagi, Kimiaki Tamano, Naoyuki Taketoshi,Tetsuya Baba and Yuzo Shigesato
217. MOVPE Growth of Nanostructures Based on 1208InAs and InGaPT. K. Sharma, S. D. Singh, S. Porwal and C. Mukherjee
218. Gd-Doped GaN: A Promising Material for 1217All-Semiconductor SpintronicsS. Dhar, L. Perez, O. Brandt and K. H. Ploog
219. Preparation and Characterisation of Thin Film 1225Nano-Crystalline SiliconP. N. Dixit, Sushil Kumar, C. M. S. Rauthan, M. Dilshad and S. S. Rajput
220. Single-Photon and Correlated-Photon-Pair Generations 1234Based on Semiconductor Quantum Dots for QuantumInformation DevicesHidekazu Kumano, Satoshi Kimura, Michiaki Endo and Ikuo Suemune
221. Recent Progress in Growth and Devices Based on Zinc 1244Oxide NanostructuresM. Willander, S. M. Al-Hilli, Q. X. Zhao, Q.-H. Hu, O. Nur and P. Klason
XIX
222. PVT Growth at High Temperature: Wide Bandgap 1253SemiconductorsN. B. Singh, B. Wagner, M. Sherwin, A. Berghmans, D. Thomson,D. Kahler, D. Knuteson, C. Lears and J. J. Hawkins
223. Optical Beam Induced Current Microscopy at 1260Radio FrequencyFu-Jen Kao
224. Preparation and Characterisation of Thin Film 1270Nano-Crystalline SiliconP.N. Dixit, Sushil Kumar, C.M.S. Rauthan, M. Dilshad and S.S. Rajput
225. Comprehensive Study of the Mechanism of Metal Induced 1279Crystallisation of Hydrogenated Amorphous Silicon Thin FilmsHameedA. Naseem, Husam H. Abu-Safe, Khalil Sharif,Marwan A. Albarghouti, MarufHossain, William D. Brown and Ram Kishore
226. Structural Studies of Sr O75Ba 0 75Nb03 as a Function of Low 1287Temperature and Applied Electric FieldSyedB. Qadri, Jeffrey A. Bellotti, Anthony Garzarella and Dong Ho Wu
Contributed Papers227. High Energy Heavy Ion Induced Cobalt Silicide Formation 1297
as a Buried Layer in Silicon6. R. Chakraborty S.K. Haider, N. Karar, D. Kabiraj and D.K. Avasthi
228. Capacitance-Voltage Characterisation of Mixed Oxides 1302R. Das, S. Chakraborty, M. K. Bera and C. K. Maiti
229. Capacitance Reconstruction and Charge Trapping 1306Characteristics of Ultrathin High-k TO, Gate DielectricsDeposited on Strained-Si/Si(lx Ge02 SubstratesM. K. Bera, S. Chakraborty R. Das, S. Saha,S. Bhattacharya and C. K. Maiti
2-30. Growth and Characterisation of Manganese Doped Gallium 1310Nitride as a Useful Dilute Magnetic SemiconductorV. Suresh Kumar and J. Kumar
XX
231. Improvements in Optical Performance of Red-Emitting 1314(Ca,Zn)TiO,:Pi3+ Long Decay PhosphorA. F. Khan, D. Haranath, Harish Chander and Pooja Sharma
232. Characterisation of Charge Carriers in Polyaniline Doped 1318With Organic and Inorganic Acids by EPR SpectroscopyS.K. Gupta, S.K. Dhawan1, Manju Arora and Sunil Arya
233. Ftir Spectroscopic Characterisation of HCL and 1322P -Toluene Sulphonic Acid Doped PolyanilineS.K. Gupta, S.K. Dhawan, Manju Arora, D. Gupta and Sunil Arya
234. Vibrational Characteristics of a Few Rare 1326Earth SesquioxidesShaliniMehrotra, P.K Sharma, Nita Dilawar, Mahesh Kumar,S.M Shivaprasad, S.K Haider, B.V Kumaraswamy and A.K Bandyopadhyay
235. High Pressure Raman Investigation of SM,O, 1331P.K. Sharma, Shalini Mehrotra, Nita Dilawar, Mahesh Kumar,S.M Shivaprasad, S.K Haider, B.V Kumaraswamy and A.K Bandyopadhyay
236. Growth and Characterisation of 8-Hydroxyquinoline 1336Single Crystal: A Nonlinear Optical MaterialN.Vijayan, G. Bhagavannarayana, K.K.Maurya, S.N.Datta and Suranjan Pal
237. Development of ZnO MOCVD System and Growth of Oriented 1340ZnO Thin FilmsTapas Ganguli, Srinivas Daulatabad, Sanjay Porwal,T.K Sharma. Ravi Kumar and V.K. Dixit
238. Electronic Properties of Cubic Boron Nitride Films Grown by 1344Dual Frequency (Microwave/RF) Pecvd TechniqueC.M.S. Rauthan, A. Parashar, Sushil Kumar, S.K. Singhal, P.N. Dixit,B.P. Singh and R. Bhattacharyya
239. Langmuir Probe Studies of the Filtered Cathodic Vacuum 1348Arc Process for the Deposition of FetrahedralAmorphous Carbon FilmsMohd. Alim Khan, O. S. Panwar, P. N. Dixit. R. Bhattacharyya,B. S. Satyanarayana and M. Y. Khan
XXI
240. Optimisation of the MOVPE Growth of Gap Epitaxial Layers 1353on Gap ( l l l )B SubstratesT. K. Sharma, V. K. Dixit, Tapas Ganguli, S. D. Singh, S. Porwal and R. Kumar
241. Morphological Studies of CBN Films Grown by Dual Frequency 1358(Microwave/ RF) PECVD TechniqueA. Parashar, Sushil Kumar, C.M.S. Rauthan, S.K. Singhal, P.N. Dixit,B.P. Singh and R. Bhattacharyya
242. Structural Studies on Thick Ge-Rich SiGe Layers 1362S. Chakraborty, M.K. Bera, S. Bhattacharya, P.K. Bose, J.F. Woitok,and C.K. Maiti
243. Determination of Interface Trap Charges in 1366Al/ZrO2/Sige MOS CapacitorsS. Chakraborty M. K. Bera, S. Bhattacharya, P. K. Bose and C. K. Maiti
244. Interface Properties of Titanium Dioxide 1370Films on Ge-Rich SiGe LayersS. Chakraborty, M. K. Bera, S. Bhattacharya, P. K. Bose and C. K. Maiti
245. A Comparative Study on the Charge Trapping/Dotrapping 1374Characteristics under Constant Voltage Stressing ofHigh-KGate Dielectrics on Strained-Si/SiGeM. K. Bera, S. Chakraborty, R. Das, S. Saha, S. Bhattacharya and C. K. Maiti
246. Growth and Characterisation of Hippuric Acid Single Crystal: 1378Organic NLO MaterialN. Vijayan, G. Bhagavannarayana, K. K. Maurya, R. Gopalakrishnan,and P. Ramasamy
247. Comparative Study of Furnace and Rapid Thermal Annealing 1382on Electrical Properties of RF Sputtered A1N FilmsJ. P. Kar, G. Bose, S. Tuli, and S. P. Behera
248. Growth and Morphology of A1N Films on Si, 1386GaAs and InP SubstratesJ. P. Kar, S. K. Mohanta, G. Bose and S. Tuli
249. MOS C-V Characterisation of Ultra Thin (< 2 nm) Gate Oxides 1390R. Das, M. K. Bera, S. Chakraborty, A. R. Saha, S. Saha and C. K Maiti
XXII
250. Enhancement of Crystalline, Piezoelectric and Optical Quality 1394of Linbo3 Single Crystals by Post-Growth Annealing and PolingG. Bhagavannarayana, G.C. Budakoti, K.K. Maurya and B. Kumar
251. Structural, Optical and Electrical Characterisation of Epitaxial 1398Gallium Phospide Layer Grown on n-Type Si (001) Substrateusing Metal Organic Vapour Phase EpitaxyV. K. Dixit, Tapas Ganguli, T. K. Sharma, Vijay Shukla, Ravi Kumar,S. Porwal and Alka Ingale
252. Review on ZnO Thin Film Applicable for 1403Optoelectronic DevicesAbdullah Nurus Saqlaen. Mohammad Khayrul Alam and Zahirul Hoque Mazumder
253. RF- Sputtered Thin Films of ZnO and Their Characterisation 1408Harish Bahadur, S.C. Garg, S.S. Samanta, A.Basu, M. Kar,Rashmi, K.N. Sood, Ram Kishore, D. Haranath, Harish Chander,Vivekanand Bhatt, Prem Pal and Sudhir Chandra
254. Strained Growth of Sb on Trenched Si (5 5 12) Surface 1411and its Strain Relaxation ModesMahesh Kumar, Vinod Kumar Paliwal, Govind, A.G. Vedeshwarand S. M. Shivaprasad
255. Comprehensie Study of the Mechanism of Metal Induced 1416Crystallistion of Hydrogenated Amorphous Silicon Thin FilmsHameed A. Naseem, Husam H. Abu-Safe, Khali! Sharif,Marwan A. Albarghouti, MarufHossain, William D. Brown and Ram Kishore
256. Construction of Low Temperature and High Pulsed Magnetic 1423Field System for Magnetotransport CharacterisationMurthy O. V. S. N. and V. Venkataraman
257. CdSe, Je^Thin Film Electrode: Photoelectrochemical Solar Cells 1427PD.More and V B. Patil
258. Chemically Deposited (Microprocessor Based) Zinc Selenide 1432Thin Films: Micro-Structural StudiesD. S. Sutrave , P. A. Lohar and V. B. Patil
XXIII
259. Electro-Optical Characterization of y-Na(i 7,Co()%O2 PowderSynthesised By Chemical Route
D. Panda, S. Jana and K.K. Chattopadhyay
260. Preparation and Characterisation of Chemically DepositedMixed [(Bil!t,Sbx)2s3] Thin Films
A.R. Patil, D.N.Chape, V.A.Patil1, C.M.Mahajan.Yoon and SeokJin
261. Chemical Compositional Analysis of Semiconducting BismuthSelenotelluride Thin Films
A.R. Patil, D.N.Chape, V.A.Patil, C.M.Mahajanand Yoon SeokJin
262. Differential Scanning Calorimetry Study of SeUX) xBix Glasses
M. A. Majeed Khan, M. Zulfequar, Karunapati Tripathi,Sushil Kumar and M. Husain
263. Dielectric Properties of Se-S Glassy Alloys
Nadeem Musahwar, M. Zulfequar and M. Husain
264. Dielectric Relaxation Studies in a-Se-Te-Ga System
i Satish Kumar, M. Husain and M. Zulfequar
265. Effect of Transition Metal Ion Doping on the Electrical,' Optical and Magnetic Properties of ZnO
Shubra Singh, N. Rama and M.S. Ramachandra Rao
266. Relationship Between Electrical and Ionic Properties ofSputtered CNx Films
Toshifumi Satoh, Hiroyuki Tango, Genki Sago, Shigemi Kohiki,Keisuke Goto and Yo Ichikawa
267. "EL2" Revisited: Observation of Mctastable Levels ofEL2 in Semi-Insulating GaAs
0. Kabiraj and Subhasis Ghosh
268. Band Gap Shrinkage Due to Many Body Effects in GaN
Niladri Sarkar and Subhasis Ghosh
269. Surface Photo Voltage Characterisation of GaAs/AlGaAsSingle Quantum Well Laser Structures Grown byMolecular Beam Epitaxy
1436
1441
1445
1449
1453
1457
1461
1464
1467
1471
1475
V. Ramesh, Puspashree Mishra, T. Srinivasan, S.N. Singh and R. Muraljdharan
XXIV
270. Molecular Beam Epitaxy Growth and Characterisation of 1479Metamorphic In0 ,2A1O 4SAs/In() .,Ga(J 4_As Heterostructures onGaAs SubstrateT. Srinivasan, P. Mishra, S. N. Singh, R. K. Sharma and R. Muralidharan
271. Fabrication of A-SI:H and NC-SI:H TFTS Using DLC as Dielectric 1483Sushil Kumar, Jhuma Gope, C.M.S. Rauthan and P.N. Dixit
272. HRXRD and CBED Characterisation of Low Temperature 1487GaAs (LT-GaAs)Puspashree Mishra, T. Srinivasan, S.N.Singh, R.K, Sharma, R. Muralidharan.D. V. Sridhara Rao and K. Muraleedharan
273. Transmission Electron Microscopy of In Al As MeUunorphic 1492Buffer Layers Grown on GaAs SubstrateS. Bysakh, K. Muraleedharan, T. K. Nandy, R. Muralidharan and T. Srinivasan
214. I-V and Frequency Dependent C-V Spectroscopy of 1496Swift Heavy Ions Irradiated Pd/n-GaAs DevicesO.P.Sinha and PC. Srivastava
275. Active Species in SnO.,:Cu Surface for CO Detection Via 1502X-Ray Photoelectron SpectroscopeP. S. More, P. Madhu Kumar, A .B. Mandate, K.R. Patil, S.R. SainkarR. N. Karekar and R. C. Aiyer
276. Structural and Optical Characterisation of Dilute Nitride 1511Semiconductor HeterostructuresAbdul Kadir, Arnab Bhattacharya, M.R. Gokhale.Rajaram Bhat andB.M. Arora
211. Estimation of Defects in Hydrogenated Nanocrystalline Silicon 1515Films Using Constant Photocurrent MethodM. Dilshad, A. Bhardwaj, O.S. Panwar Sushil Kumar, C.M.S. Rauthan,S.S.Rajput and P.N. Dixit
278. A Technique for Estimation of Thermal Time Constant in 1519Power Semiconductor DevicesTulana Saha, Sushil K. Semwal, D.S. Rawal, Sanjiv Kumar and U.C. Ray
XXV
279. Detection of Highest Bandgap Alloy Composition Present in 1523h^Gaj xAs with Variation in Composition using SurfacePhotovoltage Spectroscopy
Suparna Pal, Tapas Ganguli, T. K. Sharma, S. Porwal, Ravi Kumar,Shailendra Kumar. M. R. Gokhale and B. M. Arora
280. Effect of Growth Parameters on the Optical Properties of 1527InGaAs/GaAs Quantum Wells Grown by MOVPE
Pratishtha Pandey, Rajesh K. Bag, R. Tyagi, T. Haldar, Mahavir Singh,Sunita Singh, Puspashree Mishra, T. Srinivasan and R. Muralidharan
281. Metal Induced Crystallisation of an Amorphous Silicon - 1531A Microstructural Pathway
A. K. Srivastava, K. N. Sood. R. Kishore and H. A. Naseem
282. Structural and Electrical Properties of Indium Tin Oxide (1TO) 1535Film on Flexible and Glass Substrates for the Fabrication of
Organic Light Emitting Devices
Vandana Singh, Arpit and Satyendra Kumar
283. Incorporation of Carbon Atoms in Si(0()l) 1540
Hanchul Kim. Wondong Kim, Geunseop Lee and Ja-Yong Koo
284. Synthesis of Microcrystalline Diamond Thin Films by 1544HFCVD Process
Suneet K. Arora, Sandeep Chhoker and V. D. Vankar
285. Phase Formation and Compositional Analysis oi~ PIZt 1548Thin Films Prepared by RF Magnetron Sputtering
Ravindra Singh, B.R. Chakraborty, Nahar Singh, Rashmi,Harish Bahadur, T.C. Goeland Sudhir Chandra
286. Analysis of Band Gap Tailoring in Moderately and Heavily 1552Doped n-ZnO Films
Anubha Jain, P. Sagar and R. M. Mehra
287. Raman and Morphological Studies of Boron Incorporated 1556Tetrahedral Amorphous Carbon Films Grown UsingFiltered Cathodic Vacuum ARC Process
O.S. Panwar, S.S. Satyanarayana, Mohd. Alim Khan, Ram Kishore,K.N.Sood, P.N. Dixit and M.Y. Khan
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288. Characterisation of BCN and S1CN Thin Films Grown on 1560Silicon Crystals by High-Resolution X-Ray Diffractometry andReflectometry TechniquesNiranjana Goswami, Manoj K. Bhuyan, Krishan Lai, Marina L. Kosinova andFA. Kuznetsov
289. A Comparative Study of CdTe, CdZnTe and the Assessment 1564of their Crystalline Quality by PhotoluminescenceGururaj A. Kulkarni, K.S.R. Koteswara Rao and R.K. Sharma
290. X-Ray Diffraction Studies on Hydrogenated CZT Substrates 1568S.Sitharaman, Anshu Goyal, Surendrapal, Madhukar Gautam, Brijbhushanand Nepal Saini
291. Electron Beam Radiation Effects on Electrical And Optical 1572Characteristics of Sb, Zn and Al Doped Tin Oxide FilmsJ.S. Bhat, K.I. Maddani, A.M. Karguppikar, B.G. Mulimani and S. Ganesh
292. Effect of ECR Plasma Exposure on Conductivity of CdTe Thin Film 1576Monika Aggarwal, Samina Khan, Zishan H. Khan, K. N. Tripathi,Z. H. Zaidi and M. Husain
293. IN-SITU Tern Investigations of Aluminum Induced 1580Crystallisation of Sputtered Amorphous SiliconR. Kishore, S. Hata, N. Kuwano, Y. Tomokiyc, H. A. Naseem andW.D. Brown
294. Electrochemical Deposition of PbSe Thin Films 1584Santosh Golia and M. Arora
295. Tern Investigation of Capping Layer Effect on Aluminum 1588Induced Crystallisation of Amorphous SiliconR.Kishore, A.S. Islam, S. Goeke, Husam Abu-Safe,H.A. Naseem and W.D. Brown
296. Nano-Modifications on the Surface of Si/V/Si Thin Films by 1594Swift Heavy Ion IrradiationDiva, K.N. Sood, A.K. Srivastava, and R. Kishore
297. Growth and Studies of In^MnSb/GaAs Epilayers by 1596Liquid Phase EpitaxyK.Ganesan, S.Mariyappan andH.L.Bhat
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Section I: Emerging Technologies
Invited Papers
298 Design and Development of Polymer-Based Microfluidic Channels 1605and Networks for Handling Nano Liter Solutions using SoftLithographic TechniquesS.C. Jain, V. Sharma, V.K. Tanwar and P.K. Singh
299 Fabrication of Micro-Patterned Surfaces with Contrasting Physical 1610and Chemical Properties for Selective Deposition of Biomoleculesfor Biological ApplicationsS.C. Jain, V. Sharma, V.K. Tanwar and P.K. Singh
Contributed Papers300 Effect of Boron Doping in Tetrahedral Amorphous Carbon Films 1617
Grown using Filtered Cathodic Vacuum Arc ProcessMohd. Alim Khan, O.S. Panwar, P.N. Dixit, S.S. Satyanarayana, M. Dilshad,A. Bhardwaj and M. Y. Khan
301 Study of Pure and Doped Tetrahedral Amorphous Carbon Films 1621Deposited using Filtered Cathodic Vacuum Arc ProcessO.S. Panwar, Mohd. Alim Khan, P.N. Dixit, S.S. Satyanarayana,R. Bhattacharyya and M. Husain
302 One Stop Solution for Measuring the Super-Gain of an Open 1626Loop Op-Amp by Oscillation Based TechniqueBijay Kumar Sharma
303 Fabrication of Quantum Islands for Single Electron Transistors 1637using Focused Ion Beam TechnologyP. Santosh Kumar Karre and Paul L. Bergstrom
304 Electron Field-Emission From as Grown and Nitrogen 1642Incorporated Tetrahedral Amorphous Carbon Films GrownUsing L Bend Pulsed Filtered Cathodic Vacuum Arc ProcessO.S. Panwar, N.L. Rupesinghe and G.A.J. Amaratunga
XXVIII
305 Electron Field-Emission From Hydrogen Incorporated 1646Tetrahedral Amorphous Carbon Films Grown Using anS Bend Filtered Cathodic Vacuum Arc ProcessO.S. Panwar, Mohd. Alim Khan, B.S. Satyanarayana, P.N. Dixit,Sushil Kumar and M. Y. Khan
306 Hyperbolic Model to Study Laser Irradiated Effects on 1650Semiconductor Doped Glass MatrixAbhishek Verma, P.K. Pandey and P.K. Bhatnagar
307 Microwave Permittivity and Permeability of Barium 1654Hexaferrite-Polymer Nanocomposite Thick FilmsMukesh C. Dimri, Subhash C. Kashyap and D.C. Dube
308 Investigation of the Ferromagnetic Semiconducting Oxide 1658Co-ZnO as a Function of Cobalt DopingV.K. Sankaranarayanan, S.N. Sharma, M. Kar and S.T. Lakshmikumar
Late Arrivals
309 Realisation of Quantum Dot (QD) Boolean Logic Gate for 1665Image Processing ApplicationsM. Ray, S.S. Dan and C.K. Sarkar
310 Role of Surface in the Light Induced Degradation of Nanocrystalline 1670and Amorphous SiliconN.P. Mandal, Abhishek Kumar and S.C. Agarwal
311 Current-Voltage Characteristic of Dark and Illuminated 1674Polymer Solar CellsVikram Kumar
312 Structural and Optical Characterisation of Dilute Nitride 1677Semiconductor HeterostructuresAbdul Kadir, Arnab Bhattacharya, M.R. Gokhale,Rajaram Bhat and B.M. Arora
3 13 Dislocation Generation in Silicon by Thermal Stresses 1681Bhushan Sopori and Przemyslaw Rupnowski