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Brochure for Cogenda Radiation Effect Simulation Suite
Citation preview
Mask Layout
3D TCAD Model
Particle Sample
Process Rule
Particle Simulation
...
Gds2mesh
Gseat/VisualParticle
TCAD Simulation
Statistical Analysis
Flipped Not flipping
RunSEU
Particle Simulation
Particle Simulation
TCAD Simulation
TCAD Simulation
...
Genius/VisualTCAD
Unique Technologies● Fully-physical simulation framework for radiation effects● TCAD simulator able to handle over 1 million mesh nodes● From space radiation environment to SEU rate, end-to-end solution● Estimating small probability with statistical analysis
Physics-Based Simulation of Radiation Effects in IC
Framework and Modules
● 3D modeling Gds2mesh● Particle simulation Gseat/VisualParticle● TCAD simulation Genius/VisualTCAD● Integrative framework RunSEU
Integrated Solutions for EDA / TCAD / RadHard
SolutionsCogenda
Fully-Physical Other
TCAD-basedOther
Spice-based
Number of TCAD simulated transistors 1 – 30 1 – 6
Number of grid nodes in TCAD model < 500 万 < 50 万 –
Number of spice-simulated transistors > 1,000 > 1,000 >1,000,000
Parasitic BJT transistor effects
Mask layout and isolation effects
Particle transport physics
Randomness of particle transport
Radiation source Ion/Proton/Neutron/Electron/Photon Ion –
Time to analyze the SEU of a single SRAM cell (8-core parallel computation) ~ 30 mins ~ 30 mins < 1 min
Suitable application SEE, Dose rate, TID SEE, Dose rate TID
Number of events analyzed > 10,000 (w/ statistical enhance)
< 100 > 10,000
Cogenda data points:Transient of two switches (rise/fall), 2 CPUs (Xeon 5620)
Other TCAD data points:1: 6T SRAM, 45K mesh nodes, transient 4 CPUs yr2008 (old)2: power device , 500K mesh nodes, steady-state ? CPUs3: 6T SRAM, 1million mesh nodes, steady-state 4 CPUs yr2011 (latest)
10 100 10000.1
1
10
100
1000
10000
100000
nMO
S SR
AM
Inve
rter
NA
ND
2 MU
X2
Latc
h D-F
F
Traditional
Power (Traditional)
Fast
Power (Fast)
Other TCAD tools
number of mesh nodes (x1000)
sim
ula
tion
tim
e (
min
.) ①
③②
Trad.: Fully-implicit methodFast: Half-implicit method
Presented at 2012 SISPAD
Comparison of Commercial SEU Solutions
Unique Fast-TCAD Solver, Fastest in Industry
1 active cell, 2 dummy cell, well contacts将在 NSREC 2012 发表
Fully-Physical Simulation – Every Details Matter
● Realistic 3D Models● Substrate● Metal interconnects
● Geant4-based particle simulation● Fully-integrated with Gds2mesh /
TCAD modules● Complete physics list● Suitable for all radiation sources
● Heavy-ion (left)● Proton/Neutron (right)● Electron● Photon (X-ray 、 γ-ray)
● Biased cross-section for rare reactions
Comparison with Experimental results
0 5 10 15 20 25 30 35 400.01
0.1
1
10
Experiment
Simulation
LET (MeV/cm2/mg)
σ/b
it (c
m2)
HM62V8100 SRAM SEU cross-section
H.X. Guo et al, Atomic energy science and technology, v44, pp. 1498-1504, 2010.
Ion Energy (MeV)
LET (MeV/cm2/mg)
12C6+ 80 1.73
19F8+ 104 4.33
28Si10+ 126 9.6
35Cl11+ 138 13.6
63Cu13+ 161 33.4
Simulated SEU cross-sections agree with accelerator experimental results
苏州珂晶达电子有限公司中国江苏省苏州市星湖街 328 号国际科技园五期 22 栋 306 室邮编: 215123电话: 512-67900636电邮: [email protected]网址: http://cn.cogenda.com
Cogenda Pte Ltd100 Tras Street #16-01 Amara Corporate TowerSingapore 079027Email: [email protected]: http://www.cogenda.com
System Requirement
- Redhat Enterprise Linux RHEL 5.x/6.x, 64-bit- Ubuntu Linux 12.04 LTS, 64-bit- Microsoft Windows XP/7/2008, 64bit
- Intel x86_64 or compatible- 32 GB RAM- 1 TB Harddisk
FlippedNot flipped, color indicates “affinity” to flip
● SRAM SEU problems● Most particles can not possibly
cause SRAM to flip, no need for TCAD simulation.
● Statistical importance sampling, fewer number of expensive simulations.
● Autonomous algorithms to find● Sensitive volumes● Critical charge
● Example (left)● 180nm SRAM cell● Subset 0: uniform sampling● Subset 1: importance sampling● Less variance
Statistical Sampling – the Time Saver
Presented at RADECS 2012
Subset 0:
Subset 1: