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TECHNICAL DIGEST
14th International
Photovoltaic Science and
Engineering Conference
26-30 January 2004
Chulalongkorn University
Bangkok, Thailand
TECHNISCHE
INFORMATIONSB1BLIOTHE
0 umeUNIVERSITATSB1BLIOTHEI
HANNOVER
Organised by
14th International PVSEC Organising Committee
Sponsored by
Energy Conservation Promotion Fund of Thailand
Program & Contents
Opening Ceremony
Auditorium 27 (Tue) 0900-1000
Master of Ceremonies: S. KanjanachuchaiChulalongkorn University. Thailand
Arrival of Her Royal Highness Princess
Malm Chnkri Sirhulhorn
Welcome Address : Assoc. Prof. Tatchai Sumitra
President, Chulalongkorn University,
Thailand
Report: His Excellency Dr. Wissanu Krca-ngam
Deputy Prime Minister, Thailand
Opening Address : Her Royal HighnessPrincess Maha Chakri Sirindhorn
PY'SEC Awards and I'VSEC Special Awards Presentation
Plenary Session I
Volume 1 Auditorium 27 (Tuc) 1000-1130
Chairperson: K, Kirlikara, KMUTT, Thailand
PL-1 Recent Advances in Solar Photovoltaic Technology
and Its New Roles to the 21s' Century's Civilization
Lire '. 1
Y. Ilamukawa
Chancellor, Ritsumcikan Univ., Shiga, Japan
PL-2 The World l'V Market Explodes: Subsidized Grid
Connected Markets in Japan, Germany and
California Lead the Way 7
P. D. MaycockPV Energy Systems Inc., Warrcnton, U.S.A.
PL-3 Policy and Plan for Alternative Energy for
Thailand 9
H. E. Dr. Promin LcrlsuridejMinister for Energy, Bangkok, Thailand
Technical Session 1
Crystalline Si Solar Cells & Materials I'
Room A 27 (Tuc) 1300-1500
Chairperson: C. Zahedi, Elkem Solar, Oslo, Norway
Vice-Chairperson: C. Tanachayanon, NSTDA, Thailand
1-1 (Invited) Thin Film Crystalline Si Solar Cells: Facts
and Challenges 13
J. Poortmans, G. Dcaucarnc and R. M. Mcrters
IMHC, Lcuvcn, Belgium
1-3 (Invited) Solar-What is a Wonderful Job 21
I. Yukawa
Kyocera Corp., Kyoto, Japan
1-4 Thin Film Solar Cells on SOI Substrates 23
\V. Wcnjing, X. Ying, L. Xudong, L. Hailing and Z.
Yuvven
BSERI, Beijing, China
1-5 Performance Dependence of Silicon Thin
Film Solar Cells on Microstructure of the
Materials 25
S. Ray, S. Mukhopadhyay and T. Jana
Indian Association for the Cultivation of Science,
Kolkata, India
1-6 Large Scale, High Efficiency Thin Film Silicon
Solar Cells Fabricated by Short-Pulsed Plasma
CVD Method 27
Y. Fujioka, A. Shimizu, H. Fukuda, T. Oouchida,
H. Tananuira, K. Nomoto, K. Okamoto and M. Abe
Sharp Corp., Nara, Japan
1-7 Present Status of ALICIA Solar Cells on
Glass"
29
A. Straub, P.I. Widenborg, N.-P. Harder1, A.B. Sproul,Y. Huang and A.G. Aberle
UNSW, Sydney, Australia1Saint-Gobain Glass Deutschland, Herzogenrath,
Germany
1-8 150 mm Layer Transfer ror MonocrystallincSilicon Solar Cells 31
Christopher Bcrge, M. Zhu, W. Brendlc, M.B.
Schubert and J.H. Werner
University of Stuttgart, Germany
Technical Session 2
Amorphous Si Solar Cells & Materials 1
Room D 27 (Tue) 1300-1500
Chairperson: K. Yamamoto, Kanaka Corp., Shiga, Japan
Vice-Chairperson: P. Sichanugrist, NSTDA, Thailand
2-1 (Invited) Advances in Amorphous Silicon Alloy
Multijunction Solar Cells and Modules 33
S. Guhu
United Solar Ovonic Corp., Auburn Hills, U.S.A.
2-2 Low Temperature Roll-to-Roll Deposition
Technique or Highly Texturized Silver Electrode
for Amorphous Silicon Solar Cells 37
A. Takano, M. Uno, M. Tanda, S. Iwasaki,
H.Tanaka, J. Yasuda and T. Kamoshita
Fuji Electric Advanced Tech. Co. Ltd., Kanaguw.a,
Japan
1 -2 (Invited) Sliver® Solar Cells: A New Thin Crystalline
Silicon Photovoltaic Technology 17
P. J. Vcrlinden1, A.W. Blakers:, K.J. Weber, V. Everett2,
M. J. Kerr', M. F. Stuckings1, D. Gordcev' and M. J.
Stocks''
Origin Energy Solar Pty. Ltd., Adelaide, Australia
"' AN 11. Canberra, Australia
XVIII
2-3
2-4
MicromorDh (^c-Si/a-Si) Tandem Solar
Modules: Basic Limits, Present Status and
Future Potential. 39
A Shah', F Meiltaud1, Vallat-Sauvain1, J Guillet', S
Fay, J Steinhduser1, M. Vanecek2, J Springer, A
Poiubu2, J Meier', U Kioll', A Buchel' and W
Dunsch41IMT, Ncuchatel, Switzerland
2Academy ofScience, Piague, Czech Republic
1Unaxis Solar Unit, Neuchatcl, Switzerland
4
PSf, Vilhgen, Switzerland
Enhanced Light Trapping in Tandem Micromorph
(H> brid) Silicon Solar Cells. 41
J Krc, K Biecl, F Smolc and M Topic
University of Ljubljana, Slovenia
3-3 (Invited) Photovoltaics Activities at the Morida
Solar Energy Center. 55
N G Dhcic, S M Bet, G Atmai am and K Lynn
Flotida Solai I neigy Ccntei, Cocoa, USA
3-4 (Invited) I lie Contribution ol Photovoltaic to
Meeting the Millennium Development Goals: the
Role of the International Lnerg> Agency
Photovoltaic Power Systems Programme. 57
13 McNehs
IF Power Co,Ltd
,
UK
3-5 (Invited) Development ol Renewable Energy
Technologies in Russia.
B Kazandzhan
C RSL, Moscow, Russia
2-5 Poly morphous Silicon Thin Films and Their Use in
Solar Cells.^
43
S Zhangl'\X Liao2, L Raniero1, E Fortunuto',
Y Xu2, H Aguas1, 1 Feircira', and R Maitms11New Unwof Lisbon & CEMOP-UNINOVA,
Capanca, Portugal2 Chinese Academy of Sciences, Beijing, China
2-6 Performance of Prototype Production Line for
Double Junction Amorphous Silicon Solar Modules
Designed and Fabricated in India. 45
A K Baiua, A Sarkci.C Bancijec, S C Saha,
S Bosc and S Ray
Indian Assoc foi the Cultivation of Science, Kolkata,
India
Technical Session 3
National Programs, Policies & Economics I
Room C 27 (Tue) 1300-1500
Chairpeison J Song, KIER, Taejon, Koica
Vice-Chairperson S. Tia, KMUTT, Bangkok, Thailand
3-1 (Invited) Status or Photovoltaics in the EU Newly
Associated States. .47
S M. PrctrusAo', A Mikolajuk1, L Faia2,S Faia2, P. Vitanov'.J Rehak4, E Mcllikov\M Palfy", P. Shipkovs7, A. Kortkus8, V §aly'J,F Nemac10, J Swcns",S Nowak12, A Zachauous",11 Fechner14, P Passinicmin1 Waisaw University of Technology, Poland2Romanian (National) Agency for Renewable
Eneigy, Romania1 Central Laboratory of Solar Energy and New
Energy Souices BAS, BulgariaASolaitcc, Czech Republic
''Tallinn Technical University, Estonia''Solart-Sysrcin Ltd
, Hungana1institute of Physical Energetics, Latvia
8Scmiconductoi Physics Institute, Lithuania
'; Slovak University ofTechnology, Slovakia'"
Energy Rcstructunng Agency, Slovenia" Novcm, The Netherlands12NET Nowak Energy & Technology Ltd
Switzerland
nCRES, Greece14
Aiscn-dl, Austria"NAPS Systems, Finland
3-2 (Invited) Photovoltaic Progress in the UK. 51
A SayighWREC& WREN, Brighton, UK
3-6 How Automotive Industrial Iccliiiologv Helps
Bring Price per Watt Dow n. 61
S Dc RyckcRecticel NV, Wetteicn, Belgium
Technical Session 4
Modules, Systems & Applications 1
RoomD27'(Tuc) 1300-1500
Chanpeison A Goet/bcigei, 1 launholei Institute toi Solai
Eneigy Systems, Get many
Vice-Chan poison W Tayati, CMU, Chiang Mai, Ihailand
4-1 (Invited) Experience with Off-Grid Photovoltaic
Systems in Tonga & Indonesia. 63
ll' Outlined1., S l|calcy',M Rctnancstu1,
T Tukunga"
^ UNSW,"sydney, Australia" Mmistiy o( hneigy, fong.i
4-2 (Invited) Quality Assurance in Rural Klvcliiflcalion
Programmes: Photovoltaic Modules Chaiacleiisa-
tion Methods. 67
L Caamano-Maitm and M Calvo
Il:S-UPM. Madrid, Spain
4-3 (Invited) Lessons Learnt from Lsing P\ Stand-
Alone Systems to Provide a Better Quality ol
Life for Rural People. 71
K Kntikaia
KMUFl, Bangkok, Ihailaml
4-4 (Invited) Off-Grid Fleet ricity Supply with
Photovoltaic Solar Energy: ( ui rent I rend in
Household Electrification. 75
II Gublei
Centre lor Solar l.nernv A: lluliouen Rescaich
(7.SW), Stuttgait, Germany
4-5 Performance Assessment lor Photovoltaic Home
Systems. 79
I. L Meyei and B Mapiuani-aUniv ol I oit llaic, AIkc, South Mnui
4-6 Study on Renewable Energv Llccliifiuilion lor
Remote Villages in Thailand. 81
N Chayakul', S Xaengsiilhoin1, P kan|«inakaioon ,
'I Chulikawir and W 1 avail'
[ PEA, Bangkok, Ihailand2CMU, Chiang Mai, Ihailand
LO4-032 Five Year's Experience (1978-2003) with Operationand Management of PV/Diesel Hybrid System in a
Wildlife Sanctuary in Thailand. '. 83
U.Boonbumroong, T. Suwannakum, S.Tia, D. Pongchavvce,K. Pcwkaew, S. Pengma and K. Kirtikara
KMUTT, Bangkok, Thailand
Technical Session 5
Fundamentals 1
Room A 27 (Tue) 1530-1700
Chairperson: T. Soga, Nagoya Inst, of Technology, JapanVice-Chairperson: W. Monyakul, KMUTT, Thailand
5-1 (Invited) Principles and Applications of DyeSensitized Nanocrystalline Solar Cells
(DSC) .' 87
M. Grazel and A. J. McEvoy
Laboratory for Photonics & Interfaces, Lausanne,
Switzerland
5-2 Dye Sensitized Solar Cells Using Nanostructured
Mixed Metal Oxides 91
A. Kitiyanan, S. Ngamsinlapasathian, S. Pavasuprce,S. Sakulkhacinaruthai, Y. Suzuki and S. Yoshikawa
Kyoto University, Kyoto, Japan
5-3 Suhgap Absorption of Photovoltaic PolymerBlends Measured by the Constant Photocurrent
Method 93
J. Willckcns1, G.J. Adriaensscns', T. Aernouts",
P. Vanlaekc2, J. Poortmans21
University of Lcuveii, Belgium"IMEC, Lcuvcn, Belgium
6-3 Amorphous Silicon Films and Solar Cells
Prepared Near the Threshold of Crvstallinitv bv
VIIF-PECVD'
"l05Y. Xu, X. Liao, G. Kong, X. Zeng, Z. Hu, H. Diao,
S. ZhangChinese Academy of Sciences, Beijing, China
6-4 itc-Si Thin Films Prepared by Hot Wire Cell
Method and its Application to Solar Cells. ...107
Y. Idc, Y. Saito, S. Hiza, A. Yaniada and
M. Konagai
Tokyo Institute of Technology, Japan
6-5 p-doped |ic-Si:H Window Layers Prepared byHot Wire CVD for Amorphous Solar Cell
Application 109
P. Kumar, D. Bhusari, D. Grunsky, M. Kupich and
B. Schrocdcr
Univ.of Kaiserslautern, Germany
6-6 Growth Study of a-Si:H Thin Films by Hot Wire
Cell PECVD Method Ill
S. Amiruddin', I. Usman2, Mursal5, T. Winata4,Sukirno4 and M. Barmawi4
1UniversitasNusa Cendana
2
Universitas Haluoleo1 Universitas Syiah Kuala4Institut Teknologi Bandung,Indonesia
Technical Session 7
III-V Solar Cells 1
Room C 27 (Tue) 1530-1 700
5-4 Solar Cell Properties of Blends and Bilayers of
the Organic Donor-Acceptor Polymer/C60Systems 95
Y. 1 layashi, I. Yaniada, T. Soga and T. Jimbo
Nagoya Institute of Technology, Japan
5-5 Fabrication of Polymer Cells at MTEC 97
S, Sahasilhiwat, L. Menbangpung, S. Aukkaravit-
tayapan and C. Thanachayanont
MTEC, Bangkok, Thailand
Chairperson: M. Yamaguchi, Toyota Technological Inst., Japan
Vice-Chairperson: P. Rugkwamsuook, KMUTT, Thailand
7-1 (Invited) Characterization of Monolithic III-V
Multi-Junction Solar Cells: Challenges and
Application 113
M. Meuscl1'-, C. Baur1, G. Siefer1, F.
A.W. Bett1, W. Warta11ISE, Freiburg, Germany
2FMF, Freiburg, Germany
Dimroth'
Technical Session 6
Amorphous Silicon 2
Room B 27 (Tue) 1530-1700
Chairperson: S. Guha, United Solar Ovonic Corp., U.S.A
Vice-Chairperson: P. Siamchai, NSTDA, Thailand
6-1 (Invited) Amorphous/Microcrystalline Silicon
Solar Cell Fabricated on Metal Substrate and its
Pilot Production 99
P. Sichanugrist
NSTDA, Bangkok, Thailand
6-2 High Deposition Rate of a-Si:Il by Using Home
Made VIIF-PECVD Method and its Application to
p-i-n Solar Cell. 103
I. Usman', A Super, Mursal\ Kukirno4, T. Winata4
and M. Barmawi4' Universitas Haluoleo2Universitas Nusa Cendana
"'Universitas Syiah Kuala
4Institut Teknologi BandungIndonesia
7-3 Chemical Beam Epitaxy System for HighEfficiency Solar Cell Fabrication 117
Y. Yagi, Y. Ohshita, K. Nishimura, U.S. Lee, N.
Kojima and M. Yamaguchi
Toyota Tech. Institute, Nagoya, Japan
7-4 Absorption and Transport via Tunneling in a
Quantum-Well Solar Cell 119
O.K. J an i and C. HonsbergGeorgia Institute ofTechnology, U.S.A.
7-5 Defect Passivation of GaAs Solar Cell on
Polycrystalline Si Substrate 121
D. Ogoshi, T. Soga, K. Hori andT. Jimbo
Nagoya Inst, of Technology, Japan
7-6 Determination of Band Gap Narrowing in n-typeGaAs and n-type InGaP from the Performance
of Solar Cells 123
M. Y. Ghannam, G. Flamand, J. Poortmans, and R.
P. Mcrtcns
IMEC, Leuven, Belgium
yy
I ethnical Session 8
Modules, Sv stems & Applications 2
Room D 27 Clue) 153(1-1700
C huiipeison L C Maitm, IFS-UPM, Madnd, Spain
Vice-Cluiiperson T Suwannakhum, KMU I P Thailand
8-1 (Invited) Developments with BIPV Svstems in
Canada. 125
L Stameme
leuinology i entie BCI1 Buinaby, Canada
8-2 Investigation ot Power Quality ol Grid Connected
P\ Systems. 129
\ /ahedi
Monash University, Melbourne, Austiaha
8-3 I he Performance of a Grid Connected Photovoltaic
System in Malaysia. 131
S Mekhilcl and N A Ralum
Univeisity of Malaya, Kuala Lumpui, Malaysia
8-4 PV-Diescl Hybrid/Mini-C-rid Application for
Electrification of Mekong Countries. 133
N ICetjoy'2, J Schmid2 and W Rakwichian1'
SLR1, Naiesuan Univeisity, Pitsanuloke, Ihailand2Univ ci sity of Kassel, Gcimuny
8-5 Comparison of Amorphous and Single Crystal
Silicon Residential Grid Connected PV Systems:Case of Thailand. 135
S Adhikan'.S Kumai'andP Sinpuekpong21AIT, Pathumthani, Thailand
2EGAT, Nonlhabun, Thailand
8-6 NEDO/DEDE Demonstration Research Project:Field Experiment on 100UW of PV Grid-
Connected System in Thailand. 137
1. Yagi', II lasai'.T Goto'. II Nishi1,K Sugimoto1, I Shui|u\ K lakahara2 and
Y Kiiniba2'Showa Shell Sekiyu KK, I okyo, Japan
" 'I he Okinawa Electne Powei Co , Inc , Japan
8-7 Power Quality ol Four Rooftop Grid-Connected
Photovoltaic Systems. 139
U Sangpanich, J Ihongpom, K Kiitikata and
C Jivacatc
KMUIT, Bangkok, Ihailand
Poster Session 1
Room L 27 (lue) 1700-1800
Fundamentals and New Approaches
P-l In-Situ Doped Spin-On Film lor Anti-Reflection
Coating. 141
U Gangopadhyuy K Kim, S K Dhungel, I)
Mangalaiai and I Yi
Sungkvunkwan Univeisity, Suvvon, Koiea
P-2 Antirellection Coatings for Photovoltaic ApplicationsBased on a Griuled-hulev Layer. 143
V L Nikulm'.T 1 'luuibuev'.R M Aitmambetov1,L M Muialov'.P Akhter and A llussain2
'Al-Furabi Kazakh National Univ, Ahnaty,Kazakhstan
2C OMSALS, Islamabad, Pakistan
LP1-04I Photovoltaic Properties ol n-C:P/p-Si (ells
Deposited by \e( 1 Lvimei Laser Using Graphite
Target. 145
M Rusop'.S M Mominuzzanian', I Soga', 1 limbo'
and M Umeno1'NIT, Nagoya, Japan
2 BUM, Dhaka, Bangladesh' Chubu Univeisity, Kasugai, Ijpan
P-3 Device Parameters ol Pulsed Laser Deposited
Phosphorus Doped ( amphoric Carboii/p-Silicon
Photovoltaic Cell. 147
S M Mnmiiuizzaman', M I Lisaniizzaman',
M Rusop ,
1 Soga ,I limbo and M I muio'
'
Bangladesh Univ of I ng ^ | ethnology (BUI 1),
Dhaka Bangladesh2
Nagoya Institute ol leihnologv lapan1( hubti Univeisity, Kasuuai, lapan
LP1-038 lenipeiature Dependence and Photocoiiducliviv
Characteristics ol Pulsed laser Deposited
Vmorphous ( arbon Nitride Minis tot Solar Cell
Application. 149
M Rusop', S M Mommuzzuman,
I Soga1, I Jimbo1
and M Umeno'1Nl'l, Nagoya, Japan
2BUI I, Dhaka, Bangladesh
'Chubu Univeisity, Kasugai, lapan
P-4 Rectifying I-V Characteristics ol N-typeFluorine Implanted a-C/p-typc Si lleteio-
jufiction Diode. 151
K I. Naiayanan' 1 Soga1, N I I kins-Daukes"
and M Yamaguchi1Nagoya Inst ol leihnologv, Shovva, lapan
"
loyota I ethnological lust,Nainwa, lapan
P-5 Physical and Optical Propenties ol VmorphousCarbon Thin Films Grown on Quartz/SiliconSubstrates bv Microwave Surface Wave Plasma
(VI).'
153
S Adhikau, A M M Omci II Mukutam.
N 1 lasegavva, S Kalo, II UcludaaiulM Umeno
Chubu Umveisitv, Kasui'ai, lapan
P-6 Optical Characteristics of Amorphous ( arbon
I'hin Films Grown on Mevible Plastic Substrates
by Microwave Suiiace Wave Plasma CM) lor
Photos oltaics. 155
A M M Omet1, S Adhikau', S Adhikaiv1, M
Rusop', II Uthida'and M Umeno''Chubu Univeisity, Kasugai. lapan
2
Nagoya Institute ol Icthnnlmw (\'l I I lapan
P-7 Photoconductivity ot Nitrogen Doped Amor¬
phous Carbon Thin I ilms on Silicon Substrate
Deposited by Microwave Surlaee Wave Plasma
CVD from Camphor. 157
II Mokiitam, N llasci'awa, S Adhikau, S \dlukai\.
II Uthida and M Umeno
( htibu llmveisilv Kasui'ai, lapan
LP1-039 Photovoltaic Lllects ol MtingenaUd ( ai bonateous
Minis Grown on \ arious Substiales bv Miciowave
Surface Wave Plasma ( M). 159
M Rusop', \ \1 \1 Oiiu'i S \dhik.ui
I Soga', I limbo', and M I imenn
Nl I, Naguva. lapan"Chubu Univcisils, Kasiuvu lapan
Fundamentals and New Approaches cont.
P-8 Band Gap Shift Due to Nitrogen DopingMicrowave Power and Gas Presure of a-C ThinFilms Deposited by Microwave Surface Wave
Plasma CVD"
161
S. Adhikan', A. M. M. Omer', S. Adhikary1, M.
Rusop2, H. Uchida'.T. Soga2, and M. Umeno'1 Chubu University, Kasugai, Japan2
Nagoya Institute of Technology (NIT). Japan
P-9 Influence of sp2 and sp3 Composition Control byDeposition Conditions on Amorphous Carbon (a-
C) Thin Film from Camphor Grown by Micro
Wave Surface Wave Plasma (SWP) CVD. 163
N. Hasegavva, II. Mokulani, S. Kato. S. Adhikary, II.
Uchida, and M. Umeno
Chubu University, Kasugai, Japan
P-10 A Synthesis of CdTe Nanocrystals for HybridSolar Cells '..165M.Kang, Y. KangandD. Kim
Korea University, Seoul, Korea
P-ll Generation Mechanism of Defects Induced by
Light Irradiation in B-doped Cz-Si 167
Y. Ohshita, T. K. Vu and M. YamaguchiToyota Technological Institute, Nagoya, Japan
P-12 The Performance of Photoelectro-chcmical Cell
Utilizing Alizarin and Rutin Hydrate 169
R. Tongpool and S. YoriyaMTEC, Bangkok, Thailand
P-13 Photoelectronic Performance of Solar Energy-Chlorophyll Cell 171
L. BaojunShenyang Energy Resource and Biology Material
Institute, Shenyang, China
P-I4 Comparative Studies on Ti02 Films for DyeSensitized Solar Cells 173
B. Ghosh1 S. Das', D. P. Chakravarti2 ,A.Boral2 and
S.DatiaJ'
Jadavpur University, Kolkata, India2
B. E. College (DU), llowrah, India'
Northumbria University, Newcastle upon Tync, UK
LP 1-024 Using Porphyrin and Eosin y as Electron Donor in
Dye Sensitized Solar Cells 175
C. Saekung, N. Pungwiwat and S. Laosooksathit
KMITNB, Bangkok Thailand
P-15 Fitting Flash Test Curves with ECN's l-V Curve
Fitting Program IVFIT. 177
A. R. BurgersECN, Pcttcn, Netherlands
P-16 A New Light Trapping TCO for /tc-SLH Solar-
Cells 179
J. A. Anna Selvan, A. E. Delahoy, S. Guo and Y. M. Li
Energy Photovoltaics, Inc., Princeton, U.S.A.
P-17 Influence of Band Edge Discontinuities on
Performances of a Si:lI/cSi Heterostructurcs : A
Simulation Study 181
Z. II. Hu'2, Y. Y. Xu'( X.B. Zeng1, S.B. Zhang',II. W. Diao', G.L. Kong1, and X.B. Liao''Institute of Semiconductors, State Key Laboratoryfor Surface Physics, Beijing, China
2
Solar Energy Institute, Kunming, China
P-18 Effect of Spin Density on Photovoltaic Propertyof a-C/Si lleterojunction 183
D. K. Mishra1, X. Tian2, T. Soga2, T. Jimbo2 and
M. Sharon'1
1 IT Bombay, Munibai. India2
NIT Nagoya, Japan
P-19 Preparation of Mixed Metal Oxides Nano-
structirred Materials and Their Photocatalytic
Activity Under Visible Light. 185
S. Pavasuprec, Y. Suzuki and S. Yoshikawa
Institute of Advanced Energy, Kyoto Univ., Japan
P-20 Efficient Nanocryslalline Tandem Photovoltaic
Cell with Two Anodes ....187
O. Shcvalcevskiy1,2, S. Y. Myong', L. Larina2 and
K. S. Lim''Korea Advanced Inst, of Science and Technology,Daejcon, Korea
2Institute of Biochemical Physics RAS, Moscow,
Russia
P-21 Plastic Solar Cells : Screen-Printing as a Novel
Deposition Technique 189
T. Acrnouts, P. Vanlaekc, J. Poortmans and
P. Hcremans
IMEC, Leuven, Belgium
P-22 Photo-Active Region in Thin Film Solar Cells
with an Organic lleterojunction 191
T. Osasa and M. Matsumura
Osaka University, Japan
P-24 Investigation of Quartz Deposits for Solar Cell
Industry 193
S. Jivathanond
Bureau of Mineral Resources, Bangkok, Thailand
P-26 Calculation of Angular Distribution of Scattered
Light Intensity by Rough Surface of
Transparent Material 195
W. W. Wcnasand Yuliana
Bandung Institute ofTechnology, Bandung, Indonesia
P-27 ZnO Thin Films for TCO by Sol-gel Spin
Coating 197
H. S. Kim and D. Kim
Korea University, Seoul, Korea
P-28 A Study on Work Function of F-doped Sn02
Thin Films Prepared by Pyrosol Method 199
S. Sakulkhaemaruetliai', T. Thcapsirr,C. Thanachayanont', S. Sahasithiwat', and
W. Veerasai2'MTEC, Bangkok, Thailand
2 Mahidol University, Bangkok, Thailand
P-29 Heat-Rcsisting TCO Films for PV Cells 201
K. Goto, T. Kavvashima and N. Tanabe
Fujikura Ltd., Tokyo, Japan
P-30 Mo-doped Indium Oxide TCO Thin Films with
Mobilities over 95 cm2 V'S'1 203
C. Warmsingh', Y. Yoshida1, D. W. Readey',J. D. Perkins2, P. A. Parilla2, C.W. Teplirr, J. L.
Allcman2, T. A. Gessert2, T. J. Courts2, and D. S.
Ginley"1 Colorado School or Mine, Golden, CO. U.S.A.2NREL, Golden, CO, U.S.A.
XXII
Fundamentals and New Approaches cont.
P-31 Crystal Evaluation of Spherical Silicon Produced
with Extremely High Speed and their Solar Cell
Performance 205
S Omae', T Mrneinoto' II lakakuia'
Y Yamaguchi\ M Mutozono', and Y Hamakawa1Ritsumcikan Univ Shiga, lapan
21 he Univeisity of Tokyo Japan'
Clean Ventuic 21 Co, Shiga, Japan
P-32 Design Strategv and
Silrton Solar Cell
Reflector System.
Development of Sphencalwith Senu-CoiKentration
207
r Minenioto,M Muiozono", Y Yamaguchi,
H lakakuia'and Y Hamakawa11 Ritsumcikan Univeisity, Shiga, lapan2Clean Venture 21 Co
, Shiga, JapanI
The Univeisity of Tokyo, Japan
LP1-0I7 Novel Deposition Method of Antr-reflectrve
Coating lot Spherical Silicon Solar Cells. 209
T Mincmoto1, M Muiozono2 Y Yamaguchi1,II Tdkakuia1 and Y Hamakawa11Ritsumcikan University, Shiga, Japan
2 Clean Venture 21 Co, Shiga, lapan
'The Univeisity of Tokyo, Japan
LP1-002 Nanocrystalline Titania with Highly Photocatalytic
Activrty Prepared by Surfactant-Assisted
Mechanism. 211
S Sakulkhaemaructhai, S Pavasupiee, Y Suzuki and
S Yoshikawa
Inst of Advanced Eneigy, Kyoto Univeisity, Japan
LP 1-009 Photoresponse from Polycrystalline Cu20/ZnO
Hetcrojunctiori Thin Films Grown by RT
Magnetron Sputtering. 213
M Yanagita', S Ishi/uka2, K Suzuki1, Y Nawa', 1
Sakuiai', K Matsubara2, S Nikr, K Akimoto''
University ofTsukuba, lapan"
National Institute of Advanced Industrial Science
& Technology, Ibaraki, Japan
LP1-011 Stoichiometric as-Grown CuInSe2 Thin Films
Deposited by Pulsed DC MagnetronSputtering. . 215
J HisekandR D Pilkrnglon
University of Salfoid, UK
LP1-021 Influence ot Fire-Through Process Analyzed byElectron Beam Induced Current. 2!7
II Kondo T Yamazaki, Y Fakahashi, Y Matsumuia,K Nishioka, Y Uraoka and'I TuyukiNAIST, Ibaraki, Japan
Crystalline Si
P-33 Fabricating Polycrystalline Silicon Solai Cells
Using Aluminum Induced CrystallizationTechnique. 219
M Hossam, 11 Abu-safe II Naseem
Univeisity of Aikansas, USA
P-34 Characteiization of Silicon Nitndc Film Depositedby PECVD for Crystalline Silicon Cells.
. 221
X Li, Y h,Y Xu, II Li, W Wang and Y Zhao
Beijing Solar Eneigy Rescaich Institute, China
LP1-040 Photovoltaic Characteristics ot Phosphorus
Doped Hydrogenated Amorphous Carbon Films
Grown by R. F. Plasma Enhanced CVD. 223
M Rusop I Soga and I limbo
Nl I, Nagoya lapan
LP1-027 Effect of SrN\:lI Passivation on Ihm Mini Poly-
Si Solai C ells. 225
Y Matsumuia 1 Yamazaki Y Uiaoka and
1 I uyukiAlSUbaiaki lapan
P-35 Eflect ol Nil, Plasma lieatment for Sr02Passivation Layer. 227
M Tujiuaia, I Saitoh and K Kamisako
DUAL lokyo lapan
LP1-023 Plasma Sin lace lexUriization toi MonocrystallnieSilicon riun I-ihri Solar Cells.
'
229
Y Iakahashi Y Yamamoto, I Yamazaki, Y
Uiaoka and I I yukiNAIS I, Ibaraki, Japan
P-36 The Formation Mechanism of PPS with
Chemical Etching Method Acting as
Aiitireflection Coaling. 231
H Wang, X Sun, Y /hang, W 1 i and I 1 u
Zhengzhou Univeisity, ( hina
P-37 Spin-On Doped and Electioless Plated Bifacial
Silicon Solar C ells. 233
U Gangopadhyay, K II Kim, I S Yoo D Mangalaraiand J Yi,
Sungkytinkvvan Univ Suvvon Koiui
P-38 Different Aspects of Back-Surface Meld (BSI-)Formation for Thin Mulfi-C lysfallirie Silicon
Waters.'
235
A Kiaenzl, A Schneider, I Mclnvk, A llausei,L Ruland and P I alh
UKN, Konstanz, Germany
P-39 Solar Photovolfarc Cells Study and 11 ends. 237
Kh Zazi1, Ah Bennouna2, Di'/x|li', Ra Benthiila1,Ab Bennouna1, \\d llaindi'1National ( entei ol Scientific ivj lethnital
Rescaich, Rabat, Moiotto
Ecole Mohammadia d'nigeiiieiiis, Moiotco1
Lcole National tie l'tndustiie Mintial d, Moiotto
P-41 Defects in Polycrystalline Silicon Studs foi HighEffciency Solar Cells Appiitalum 239
T K Vu,Y Nishikawaancn Ohshita
loyota I echnologital Institute Nagova, Japan
P-42 Short-Circuit ( uirerit l)ensit\ Behavior ol Dve-
Sensiti/ed Solar Cells 241
1 Kubo, I Asano and \ Nishikitam
Nippon Oil ( oip ,Yokohama lapan
P-43 Modelling the Impact ol Inhornogeneoiis Recom¬
bination Losses on mt-Sl Cell I Ificientv 243
P P Altermatt'.A (uevas'.G I laser'
Australian National University ( anbeira Ausliaha2
Univeisity ol NSW, Sydney, Ausliaha
P-44 Bias Potential Dependence ol MiuouvstallineSilicon Structure in Hydrogen Radical ( \ D. 245
M Jeon, K KimuiaandK Kamisako
I UA i, lokyo, lapan
Crystalline Si cont.
P-45 Characteristics of Colorful Crystalline Si Solar
Cells Tor Design Architectures 247
K. SugibuchiMatsushita Eco.System Co..Ltd., Aichi, Japan
P-46 Solar Cell Emitters with Silicon Nano-
structures 249
E. C. Cho, Y. H. Cho, J. Xia, R. Corkish, G. Conibieer, Y.
Huang and M. A. Green
UNSW, Sydney, Australia
P-47 High Rate Deposition of Nanocrystalline Silicon
from SiCI4/H2 by Plasma Chemical VaporDeposition at Low-temperature 251
X. Lin, K. Lin, R. Huang, Y. Yu, J. Wei, C. Yu
Shantoa University, China
P-48 Nanosized Magnetic Materials: Technology,Properities and Applications 253
N. H. Nghi and D. D. ThongHUT, Hanoi, Vietnam
P-49 Research on Diffusion Phosphorous Paste and Its
Rapid Termal Diffusion Performance 255
Z. Liu1, C. Yao1, Z. Zhang1'2, J. Li1'2, H. Liao'-2, J.
Li''2,C. Zha''Yunnan Normal University, China
2Kunming Photovoltaic Technology Co., Ltd., China
P-50 Forming Gas Treatment on C-Si Solar Cells 257
J. Li, Y. Wang, Z. Liu, S. Wang, Z. ZhangKunming Photovoltaic Technology Co., Ltd., China
P-51 3 McV Proton Irradiation on Crystalline Silicon.. .259
J. You', J. Kang2, D. Kim2 and C. S. Kang'' Seoul National University, Korea2Korea University, Seoul, Korea
P-52 Study about Conversion Efficiency of c-Si
Solar Cells Using 40 kcV Electron Beam
Irradiator 261
J. P. Yoon1, S. J. Park', B. B. Kang1, I. S. Cha',S.O. Cho21
Dongshin University, Jeon-nam, Korea2KAIST, Korea
P-53 Characterization of Screen Printed PhosphorusDiffusion Paste and Diffusion Barrier Paste for
Silicon Solar Cells 263
J. Salami, T. Pham, C. Khadilkar, K. Mcviker and
A. Shaikh
Ferro Corp., Vista CA., U.S.A.
P-54 Large Area Metallisation Wrap Through Solar
Cell with Elcctroless Metallisation 265
H. Knauss, B.Terheiden and P. Fath
University of Konstanz, Germany
P-55 COSIMA Technology for Screen-Printed Point
Contacts to the Rear of Passivated Si Solar
Cells 267
H. Plagwitzand R. Brcndcl
Bavarian Center for Applied Energy Research,
Erlangcn, Germany
P-56 Effect of Grain Boundary Character Distribution
on Photovoltaic Performance of MulticrystallineSiGe 269
N. Usami, W, Pan, K. Fujiwara, T. Ujihara, G. Sazaki
and K. NakajimaIMR, Tohoku University, Sendai, Japan
LP1-018 Structural and Photovoltaic Properties of Multi-
crystalline SiGe with Microscopic CompositionalDistribution 271
K. Fujiwara, W. Pan, N. Usami, T. Ujihara and
T. Shishido
Tohoku University, Sendai, Japan
P-57 Si,.jGex/Si Solar Cell by Optimizing Thickness
of Graded Si,.,Ge, Layer 273
N. R. Poespavvati1, A. Udhiarto1, D. Hartanto1and M. A. Green21
University oflndonesia, Depok, Indonesia2
University ofNSW, Sydney, Australia
P-58 Polycrystalline Silicon Thin Films Grown byLow-Pressure Chemical Vapour Deposition.
275
L. Pereira, H. Aguas, E. Fortunato, R. Martins
New Univ. of Lisbon and CEMOP, Caparica, Portugal
LP1-029 Analysis of Ga-doped mc-Si Solar Cells 277
K. Fukui1, S. Fujii', M. Tsuchida', S. Tanimoto',K. Niira', K. Shirasavva1, M. Dhamrin2 and T. Satoh21Kyocera Corp., Kyoto, Japan
2TUAT, Tokyo, Japan
P-60 Chemical Texturization of Multicrystalline Si
Wafer Using Metallic Catalysts for IncreasingSolarCell Efficiency 279
K. Tsujino and M. Matsumura
Osaka University, Japan
P-61 Aluminium-Induced Crystallisation Bi-LayerProcess ora-Si: Limiting Mechanism 281
P. I. Widenborg and A. G. Abcrle
University of NSW, Sydney, Australia
P-62 Inverse Crystallography Model of Porous PolysiliconFormation Process 283
H. Wang, S. Feng Q. Duan, Y. Zhang and J. Lu
Zhengzhou University, China
P-63 The Enhancement of Homogeneity in Texture
Structure of Silicon Crystal by using Ultrasonic
Wave in the Caustic Etching Process 285
J. M. Kim and Y. K.Kim
University of Incheon, Korea
P-64 Growth and Characterization of 240kg Multi-
crystalline Silicon Ingot Grown by Directional
Solidification 287
J. M. Kim and Y. K. Kim
University of Incheon, Korea
P-65 Investigation of Isotropic Etch to Remove
Saw Damage Layer of Polycrystalline Silicon
Wafer 289
J. Ji, Z. Shi, R. Chen, C. tong, H. Li and Y. WangWuxi Suntech Power Co., Ltd., Wuxi, China
XXIV
Crystalline Si cont.
P-66
-67
P-68
P-69
-70
P-71
P-72
-73
P-74
P-75
P-76
Consequences from the Defect-Pool Model on the
Fabrication of Multicrvstalline Ingots and Solar
Cells. 291
P P Alieiniatt and A Cuevas
Austialian National University Canbeira, Australia
C haiactenzation of Some Low Cost Multicrvstalline
Silicon Solar C ells. 293
A b Ghitas and M M SabiyNational Reseuith Inst ol Astronomy & Geophysics,Cuuo, Egypt
Lxcellent Effect of Gallium Solvent on
Preparation ot High Liletitnc Silicon Crvstal bv
LPE Method.'
295
I Uphaia, Y Satoh K Obaia, K fu|ivvaia, G
Sazaki and N Usami
IMR Tohoku University, Sendai, lapan
Segregation ot Ga and B Impurities in Unidirectional
Solidification ot Silicon Ingots. 297
M Dluinnn',11 Hashigami1, 1 Satoh2, 1 Cguchr, I
I Inasavva2 and I Yumaga2'TUAT, Tokyo, Japan
"
Dia-icht Kidcn Co, lokyo, Japan
The Natme of Grain-Boundary in PolycrystallineSilicon Studied by (lie High-Sensitivity Hall
Measurements. 299
M Isomuia
fokai Univeisity, Kanagavva, Japan
Preparation of Silicon from Rice Hulls.
E Swatsitang, S Suijaiajai and P AiayaiatKhon Kaen Univeisity, Thailand
301
Ellect of Illumination Spectra on Light-InducedDcgi atlation in Multicrystallme Si Solar Cells. 303
Y Kayamon, H 1 lashigami, M Dhumi in and 'I Saitoh
FUAl, Tokyo, Japan
Contact Resistance at ln2 (),: FAT ST
Interface. 305
G Untila, T Kost and A Chebotaieva
Lomonosov Moscow State Univ, Moscow, Russia
Preparation of N-doped Ti02 Thin Films ProtectingTransparent Conducting Oxide Films lor Si Thin
Film Solar Cells. 307II Natsuhara', K Matsumoto1, N Yoshida", I Itoh''S Nonomuia1 \ M 1 ukavva" and K Sato2'Gifu Univeisity, Japan
2Rescaich Ccntei, Asahi Glass Co
,Ltd
, lapanJapan Science and lechnology Agency, Japan
Crystal Growth ot Pohtrystalline Silicon Thin
Film on High Substrate fexture Evaluated byScanning Probe Microscopy. 309
R Muhida'. I Haiano' I Sugano1, 'I loyaiTU1. II
Okamoto'.S Izumr, II lakakuia", and Y llamakavva-1 Osaka Univeisity, lapanRilsuincikdii Univeisity, Shiga lapan
Influence ol I'CO/p-layer Interlace on Micro-
ciystalline Silicon Solar Cell. 311
I Fujibayjshi M Kondo and A Matsuda
AISl Ibaiaki, Japan
P-77 TCO/(n'pp') Si TCO Laminated Gird C/ Silicon
Solar Cell. 313
G Untila, I Kost and A ( hebotaieva
Lomonosov Moscow State Univeisity, Mostovv, Russia
P-78 Hie ^t-Sj.l! Solar (ells bv Hot Wire CM).
What is Most ( litical Deposition Parameters tor
Solai Cell Piofoi mantes? 315
I ( 1 et \ S hint' S K Kim K II Win I
Song and I I Paik
Photovoltaic Rescaich t enter, Kll R lat'|on koica
P-79 Operation Properties ol mt-Si:II pin and a-
Si:ll/mc-Si:II I andeni Solar ( ell. 317
I C 1 ee, Y S lung S K Kim, Is. II S uon, I
Song and 1 I Paik
KI1R laeion Koica
P-80 Boron-Doped Microcry stalline Sihcon-Caibide
(P-/x-SiC :ll) I Inn Minis loi pin /je-Shll Solar
Cell Applications. 319
J C Lee, A lumbcitz'.Y S lung, S K Kim, K
II Yoon I Song and I .1 Paik
K1LR, laeion, Koica'
IPV, I'Orsthungszentium lulicb Gmbl I, (leinwny
P-81 Correlation Between Electronic Propeities ol
Grain Boundary and Hun I itm Poly-Si Solai
Cell Performance Deposrfed byAPCVD. 321
I Yamazaki, Y Matsumuia, Y Uiaoka and I I uvuki
NA1SI, Ibaiaki, lapan
P-82 Series Connection in 'linn Mini Crystalline Si
Solar Modules on Insulating Substrates. 323
V Gazuz, R Auei.M Sthulz aiul R Bitndcl
BCAI.R, hilaiigen, Germany
P-83 Light Trapping Properties of I Inn Silicon I ilms
on AIT-Textine Glass. 325
N Cluiangsuvvanith, I1 I \\ idcnboig, P t anipbclland A G Abeile
UNSW, Sydney. Ausliaha
P-84 Polycrystalline Silicon Minis on Glass by Solid
Phase Crystallization ol Evaporated a-Si. 327
I) Song, P Widenboii'. A Stiaub. N lluanv and
A G Abeile
UNSW, Sydney, Ausliaha
P-85 Fabrication ol Crystalline Silicon Solar ( ells byAluminum Bonding. , 329
J M Kim and Y K Kim
Univeisity ol Incheon, Incheon, Koica
P-86 Potential ol Quasi Monom stalline Porous
Silicon (QMPS) Laser lor I luu Solai (ell
Application. 131
M Baneijec', I) Maiumdai,
U Gam-opadhvav1S K Dulia'andll Saha'ladavpui Uiliveisitv India
R R R Mahavrdv.ilava, India1
( ity ( ollegc. Kolkata, India
C rystalline Si cont.
P-87 Growth Behavior of Polycrystalline Silicon Thin
Films Prepared by RTCVD. 333
Y F Hu1, H Shen2, L Wang2, Z C Liang2. Z
Y Liu',L S Wen1 South China Univeisity ol Technology, Guangzhou.
( hina
Guangzhou Institute of Lneigv C onsei vation,
Guangzhou, C hina
P-88 Silicon Thin Film of \\2Q-, Ceramics by Zone
Melting Recrystalhsation. 335
X Ymg, L Xudong, I Hailing W WenjingBeipng Solai Eneigy Rescaich Institute, China
P-89 Optimization and Characterization of Silicon
Sheets from Powder for Thin Film Solar Cells.
337
Z C Liang12, H Shcn'.X W Zou', N S Xu2'
Guangzhou Institute of Energy Conveision,
Chinese Academy of Sciences, China2
Zhongshan University, China
P-90 Increasing the Light Generated Current in Thin
Silicon Solar Cells Using Pigmented Diffuse
Reflectors. 339
N. C Shaw and J E Cottei
UNSW, Sydney, Australia
P-91 The Application of Grating Couplers in Thin-Film
Silicon Solar Cells.. 341
H Sticbig, N Scnoussaoui, T Biammei and J Miillci
Foischuiigszentiuin Juhch GmbH, Juhch, Germany
P-92 Low-Cost Rearside Floating Junction Solar Cell
Issues..
343
S Dc Woll. f Daicimckx, G Agostinelli and
G. Bcaucainc
IMEC, Leuven, Belgium
Amorphous Si
P-93 Study ot BfCIh), Doped a-SiC and p/i Interface of
a-Si:H Solar Cells. 345
1 Xue, D, Zhang, Y Wang, X Zhang, Z Guan, J
Sun, Y Zhao and X GcngNunki University, Tianjm, China
P-94 Highly Stable and Textured IntentionallyHydrogen Doped Novel ZnO Film Prepared byPhoto-MOCVI) Technique. 347
S Y Myong and K S Lim
KAIST, Dacjeon, Koica
P-95 Large Area integrated Double Junction a-Si Solar
Module Fabricated by Using Seed Layer /n-itc-
Si:Il Bilaycr.
"
.. 349
(. Baneijee, A Saiker SC Saba and A K Baiua
I AC S, Kolkata, India
P-96 Preparation ol itc-Ge:C Thin MIrns byIIWC VI). 351
Y Yashiki S Miyaiuna, A Yaniada and M Konagai
lokyo Institute ol I ethnology, Tokyo, lapan
P-97 High Electron Mobility Indium Doped Zinc
Oxide Deposited at Room Temperature by RF
Magnetron Sputtering. 353
A Pimentcl, L Foitunato, A Goncalvcs, A
Mdrques, H Aguas, L Pereiia, 1 I'citena and R
Mattins
New Univeisity of Lisbon & CFMOP-UNINOVA,
Capanca, Poitugal
P-98 Fabrication of Large Area Integrated Double
Junction a-Si Solar Modules by Using p-typeand n-type Hy drogenated Silicon Oxide
Films. 355
A Saiker, Chandan Baneijee, S C Saha and
A K Baiua
IACS, Kolkata, India
P-99 Influence of the Deposition Pressure on the
Morphology of Gallium Doped Zinc Oxide
Thin Films Deposited by RI- Magnetron
Sputtering. 357
E Foitunato V Assuncao, A Goncalves, A MarquesA Pimentcl, 11 Aguas, L Percna, I Fcncira and
R Martins
New Univ of Lisbon & CEMOP-UNINOVA, Capanca,
Portugal
P-l 00 Diphasic nc-Si/a-Si:H as a Stable i-Iayer in Solar
Cells. 359
H Hao, S Zhang, Y Xu, Z Hu, II Diao, G Kongand X Liao
Chinese Academy ol Sciences, Beijing, China
P-l 01 Impacts ol p-Type Interfaces on Performances
of a-Si:II Based Solar Cells..361
X Liao, Z Hu, Y Xu, X Zcng and X. XiangChinese Academy of'Scienccs, Beijing, China
P-l 02 Substrate Temperature Control ot Narrow Band
Gap Hydrogenated Amorphous Silicon
Germanium for Solar Cells. .363
Mursal1, A Supu2, I Usman1, T Winata4,Sukuno4, and M Barmawi4'Syian Kuala Univeisity, Banda Aceb, Indonesia
2Nusa Cendana University, Kuparig, Indonesia
1Haluoleo Univeisity, Kendan, Indonesia
4
Dept of Physics, ITB, Indonesia
P-l 03 The Permeation of Hydrogen and Inert Gas
in Sputtered a-SiC:II Alloys: Microstructure
Study 365
R Salch', L Munisa'andW Beyer1
Jurusan Fisika, Universitas Indonesia, Depok,Indonesia
2IPV, Foischungszcntium Juhch GmbH, Juhch,
Geimany
P-l 04 Low Temperature Deposition of /*c-SiC:Ge:IIFilms. 367
5 Miyapma, A Yaniada and M KonagaiIokyo Institute ol Technology, lokyo, Japan
P-l 05 Preliminary Studies ol Hydrogenated AmorphousSilicon by Modulated Rr-PECVD Method.
369
Muisal1, S Amuuddin2, I Usman', T Winata4 and
M Baunawi4, Sukuno4'
Syian Kuala Univeisity, Banda Acch, Indonesia2Nusa Cendana University Kupang, Indonesia
'Haluoleo Univeisity, Kendan, Indonesia
4
Dept ol Physics, 11B, Indonesia
Amorphous Si cont.
P-l 06 Growth of /K-Si Phase in lletero-Structured SiC,
Films by Hot-Wire CVD. 371
1 Itoh12, Y Hasegavva', M Hone', M Takeuchi'
and S Nonomuia'2' Gifn Univfsiiy, Gifu, Japan2
Japan Science Technology Coip , Saitania, Japan
P-l07 Effect ol Step - Deposition on Structures and
Properties of Transparent Conducting Al-doped
Zinc Oxide Films Prepared by DC Magnetron
Sputtering 373
J Tohsophon and N Siiikuhat
CMU, Chiang Mai, Ihailand
P-l 09 Characterisation of Indium Doped and
Undoped Zinc Oxide Films Deposited by Spray
Pyiolysis. 375
p" M*Rathecsh Kumai1, C Sudha Kaitha', K P
Vijayakumai', D K AvasthrandT Sigh2' Cochin University of Science & Pech
,Cochin,
India2Nuclcai Science Centie, Aiuna Asaf Ah Maig, New
Delhi, India
P-110 Optical and Electrical Characterization of TCO-
ZnO Film Grown by Spray Method. 377
K Yoshino, T Fukushima K rukushrma and T Ikan
Miyazaki Univeisity, Miyazaki, Japan
P-l II Surface Textured MF-Sputtered ZnO Films for
Microcrystalline Silicon Based Thin Film Solar
Cells. 379
J Hupkes1, B Rcch1, O Kluth1, T Repmann', B
Schrbrock1, J Mullet'and M Wuttmg2'
Foischungszcntium Juhch GmbH, Gcimany2
Institute foi Physics of New Matenals, RWTH
Aachen, Geimany
LP1-030 Degradation Behavior of Nanostructiire Tailored Si
Solar Cells Fabricated by Alternately HydrogenatedDilution Method. 381
M Ito, M Kondo and A Matsutla
AIST, Ibaiaki, Japan
LP1-005 Electrical Properties ol Doped Hydrogenated
Microcrystalline Cubic Silicon Carbide Thin
Films. 383
T Watahiki, S Miyajima, Y Yoncyama, A Yaniada
and M Konagai
Tokyo Institute of'Technology, Tokyo, Japan
LP1-031 Deposition Parameters Optimization of Hydro¬
genated Microcrystalline Silicon lor Application to
Solar Cells. 385
X D Zhang, I Zhu, Y Zhao, J Sun, C C Wei, G
F Hou, X II GengandS Z XiongNankai Univeisity, China
LP1-016 Eltect or CrGa-/FeGa-Pairs on the Performance ol
Ga-dopcd, Si-based Solar Cells. 387
S Bel|akowa',D Katg', G Pensl'andJ Schmidt2'
Univcisiyof Eilangen-Nuinbeig, Lilangen, GeimanyInsitut fui Soldieneigieloischung HamcTn-
Emmcithal (1SFH), Emmcithal, Germany
LP1-035 Reduction ot Light-induced Detects by Nano-
Structure Tailored Silicon Solar Cells using
Low-cost TC O Substr ates. 389
D Auu'.M Kondo2, and A Matsuda''
Nippon Sheet Glass ( o,
1 td,lapan
2AIST, Ibaiaki, lapan
Plenary Session 2
1 nmneenng Hall 2S (Wed) ()S()(M)90()
Chanpeison Y Hamakawa, Ritsumtikan Univ, lapan
Vicc-C hanpeison D Kuiangani, ( U Ihailand
PL-4 Present & Futuie ol (rvstalline Si Solai
Cells. 391
M Gieen
UNSW, Sydney, Ausliaha
PL-5 Recent Advances in Solar PV System
Engineering. 395
K Kuiokdwd
TUA'I, Tokyo, Japan
'Iethnical Session 9
Crystalline Silicon Solar Cells 2'
Room A 2S (Wed) 0900-11)01)
Chanpeison P I ath, Univeisity ol Konstanz, Geimany
Vice-Chaiipeison S Dumioiigialtana, KMU 1 I, Ihailand
9-1 (Invited) Waler Thickness & Performance ol
Multicrvstalline Si Solar Cells. 397
C J I Tool
ECN Solai hieigv, Petten, Netheilands
9-2 Process and Material Dependence ol xl-BST in
Crystalline Si Solar Cells. 401
V Meemongkolkid!
Geoigia Institute ol Tcthnolot'v, Atlanta. USA
9-3 Co-Diffusion Method lot Preparation ol Silicon
BSF Solar Cells. 403
W Guang-Pu and Y Wan-lao
Shanghai Univeisity, Jiatling, ( hina
LO9-0I4 Enhanced Phosphorus Dillusion at
Microstructure Defects in Multiery stalline
Silicon.'
405
A Bentzen1, B G Svenssoir, and \ Holt''II-L, K|fllei,Noivvay
" Univeisity ol Oslo, Oslo, Norway
Technical Session 10
Fundamentals & New Vpproaehes 2
Room B ?S(\\cd)0')00 1000
Chanpeison I) Kim Koica Univeisitv Koica
Vice-Chan poison N Ramuni'ul Milt Ihailand
LII0-O28(Invited) Pathways to litia-IIigh I (fluent
Photovoltaics 407
A Jacei-Waldau
1 uiopean ( omniissiou lspia halv
10-1 Use of Nanocrystalline Titania ContainingMesoporous Nanotube Structure to Photo-
eatalytically Produce Hydrogen from Water-
under UV Light Irradiation 409
T. Sreethawong, Y. Suzuki and S. Yoshikawa
Kyoto University, Kyoto, Japan
10-2 Microstructure and Optoelectronic Properties of
B-doped nc-Si:H Thin Films Deposited byPECVD with Different Hydrogen Dilution.
...411
M. H. GullanarandR, Q, Cui
Shanghai Jiao Tong University, China
10-3 Well Aligned CdS Nanorod/Conjugated PolymerSolar Cells 413
Y. Kang and D. Kim
Korea University, Seoul, Korea
10-4 Highly Efficient Dye-Sensitized Solar Cells Using
Nanocrystalline Titania Containing Nanotube
Structure 415
S. Ngamsinlapasathian, S. Sakulkhaemaruethai,T. Sreethawong, S. Pavasuprcc, Y. Suzuki and
S. Yoshikawa
Kyoto University, Kyoto, Japan
Technical Session 11
II-VI Compound Semiconductors 1
Room C 28 (Wed) 0900-1000
Chairperson : M. Konagai, Tokyo Inst. Technology, Japan
Vice-Chairperson: P. Sripadungtham, i. Thailand
11-1 (Invited) Technical Advances in PolycrystallineThin Film Photovoltaics 417
H. S. Ullal
NREL, Golden, CO, U.S.A.
11-2 Growth and Characterization of a New In-Based
Buffer Layer by Chemical Bath Deposition for
Cu(In,Ga)Sc2 Solar Cells 421
L. Larina1, K. H. Kim1, K. H. Yoon2, M. Konagai3andB.T. Ahn1'Korea Advanced Institute of Science & Tech,
Dacjeon, South Korea2Korea Institute ofEnergy Research, Daejeon, Korea
'Tokyo Institute of Technology, Tokyo, Japan
11-3 Fabrication of Cu(In,Ca)Se2 Solar Cells with 12%
Efficiency 423
S. Bandyopadhyaya and A. K. Pal
IACS, Calcutta, India
11-4 Mechanical Properties of Flexible Cu(In,Ga)Se2Thin Film Solar Cells 425
P. O. Grabitz and G. Bilger
University of Stuttgart, Germany
Technical Session 12
Modules, Systems & Applications 3
Room D 28 (Wed) 0900-1000
Chairperson: H. Gabler, ZSW, Stuttgart, GermanyVice-Chairperson: P. Siripuekpong, EGAT, Bangkok, Thailand
12-1
12-2
12-3
Achievement of 27% Efficient and 20OWpConcentrator Module and the Technological
Roadmap Towards Realisation of More Than
31 % Efficient Modules 427
K. Araki1, M. Kondo1, H. Uozumi', N. J. Ekins-
Daukes2, Y. Kemmoku3, M. Yamaguchi2' Daido Steel Co., Ltd., Nagoya, Japan"
Toyota Technological Inst., Nagoya, Japan3
Toyohashi Sozo College, Toyohashi, Japan
Improved High Isolation and Temperature (H.I.T.)Solar Cells and Assembly Technology 429
E. Ferrando1, L. Brambilla1, M. Caccivio1,A. Zamboni1, R. Romani", R. Campesato2,C. Flores2, G. Gabetta2, G. Strobl\ M. Nell3,L. Gerlach4, 11. Ritter"1Galileo Avionica S.p.A., Italy
2CESIS.p.A, Italy3 RWE SSP GmbH, Germany4ESTEC, Netherlands
Parabolic Trough Concentrator Cost Optimisationand Automated Design 431
R. Vardanyan,V. Dallakyan, G. Martirosyan,V. Vardanyan and T. KarapetyanState Engineering University of Armenia, Yerevan,Armenia
High Concentration with Miniature Parabolic
Dishes and Fiber Optics: An ExperimentalPhotovoltaic Study 433
E. A. Katz, J. M. Gordon, D. Feuermann,
M. Huleihil, S. Meyer and V. Melnichak
Ben-Gurion University of the Negev,Sede Boqer Campus, Israel
Technical Session 13
Crystalline Si Solar Cells & Materials 3
Room A 28 (Wed) 1030-1200
Chairperson: J. Poortmans, IMEC, Belgium
Vice-Chairperson: W. Titiroongruang, KMITL, Thailand
13-1 (Invited) Research Status and Future of
Highly Reliable Crystalline Si Solar Devices
and Materials 435
T. Saitoh', M. Dhamrin' and Hiroshi Hashigami2'TUAT, Tokyo, Japan2
Kyocera Corp., Shiga, Japan
13-2 Characterisation of Micrometer-Sized Inversion
Layer Emitters in Crystalline Si 439
J. E. Wu, and A. G. Aberle
UNSW, Sydney, Australia
12-4
XXVIII
13-3 Physical Understanding of Printed Thick Film
Front Contacts of Crystalline Si Solar Cells:
Review of Existing Model and Recent
Developments. . .
441
G Schubert, F Huster and P Fath
Univeisity of Konstanz, Konstanz, Geimany
13-4 Characterization of Silver Front Contact in a
Silicon Solar Cell. 443
C Khadilkar.S Kim, T Pham, A Shaikh and
S Sndharan
Feno Corporation, Ohio, USA
13-5 Role of Hydrazine Mono-Hydrate During Textun-
zation of Large Area Crystalline Silicon Solar Cell
Fabrication. 445
U Gangopadhyay1, K Kim2, J Yr, A Kandol2 and
H Saha11
IC Design & Fabrication Centre, Jadavput
University, Kolkata, India2
Sungkyunkwan University, Suwon, Korea
Technical Session 14
Amorphous Si Solar Cells & Materials 3
Room B 28 (Wed) 1030-1200
Chairperson J L Bergman, Thai Photovoltaics, Thailand
Vice-Chairpeison S Aukkarawittayapan, MTEC, Thailand
14-1 (Invited) Large Area Thin Film Silicon HybiidSolar Cell and Module with Inter-Layer. 447
K Yamamoto, A Nakajima, M Yoshimi,T Sawada, S Fukuda T Suezaki, M Ichikawa, Y
Koi, M Goto, T Meguro, T Matsuda,
M Kondo, T Sasaki and Y Tawada
Kaneka Corp , Shiga, Japan
14-6 Rough ZnO Layers by LP-CVD Process and
their Effect in Improving Performances of
Amorphous and Microcrystalline Silicon Solar
Cells. 459
S Pay, L rcitknecht R Schluthtet, U Kroll
E Vallat-Sauvarn and A Shah
IMT, Ncuchatcl, Switzerland
Technical Session 15
National Programs, Policies & Economics 2
Room C 28 (Wed) 1030-1200
Chaiiperson E van Dyk, Univ ol Port I hzabeth, South Alnta
Vicc-Chaiipeison V Jiiapidditkul, I PPO, Bangkok, Ihailand
15-1 (Invited) Three Decades of Semiconductor
Research for Solar Cell Application m
Thailand. 461
S Panyakeow
Chulalongkorn Univeisity, Bangkok, Ihailand
15-2 (Invited) Pre-Feasibrlrty Study on Solar Cell
Production in Ihailand. 465
D Kruangam', S Kan|anathuthai', S Ratana-
kuakangwan', K Wattaiiavidicair, V Boon-amiuidy-vittaya', P Sichanugiisf, P Siamchai'and C Iiathu"''
Chulalongkorn Univeisity, Bangkok, Thailand2Kasctsait University, Bangkok, Ihailand
'KMUTT, Bangkok, Ihailand4NS'l DA, Bangkok, Thailand
s
Dept of Mmeial Restitutes, Bangkok, Ihailand
15-3 (Invited) Developments with Photovoltaic
Research and Applications in India..
469
A ChauieyTERI, New Delhi, India
14-2 (Invited) First Amorphous Silicon Solar Cell
Production Factory in Thailand. . 451
J Gyimesi and N Chetsin
Bangkok Solar Co,Ltd
,Thailand
14-3 Amorphous Si(.xCx:II Films Prepared by Cat-CVD
Method Using C4H,0 as a C Source Gas and its
Application to Window Layer for Si Thin Film
Solar Cells.. . 453
N Yoshida1'2, K Takemoto'.Y Yamaguchi1,M Tsukamoto1, K Chikusal, A Fututa1, T Itoh'2and S Nonomuia1,21
Gifu University, JapanJapan Science & Technology Agency, Kawaguchi,Japan
15-4 (Invited) Strategic Plan Tor Photovoltaic 1UU)
and Dissemination in Korea. 473
J SongPhotovoltaic Rescaich (enlei, KII.R, laeion,Korea
15-5 (Invited) Photovoltaics and Renewable Energy
Engineering Degree Programs at UNSW : The
First Four Years. 477
J E Cottei.S R Wenluim. G Bates, A Brute, M
A Green, C B Honbeig, R Largent, M D Silver,A B Sproul,G Stapleton1 and M Watt
University of NSW, Sydney, Australia1 Global Sustainable Energy Solutions, Ulladulla,
Ausliaha
14-4 Improvement of a-Si Solar Cell Properties byUsing Si02:F TCO Films.
.. 455
M Kambc, M Fukawa, N Taneda and K Sato
Asahi Glass Co,Ltd
,Yokohama, Japan
14-5 Gallium Doped Zinc Oxide Deposited at Room
Temperature by RF Magnetron Sputtering on
Plastic Substrates: Thickness Dependence. 457
E Tortunato, A Goncalves, A Marques,A Pimentel.V Assuncao, II Aguas, L Pcrciia,
I Fcreira and R Martins
New University of Lisbon & CEMOP-UNINOVA,
Capanca, Portugal
Technical Session 16
Modules, Systems & Applications 4
Room I) 28 (Wed) 1030-1200
Chaiiperson J A Btagagnolo, NPC Amuita Coip USA
Vite-Chaiipeison C Piapanavaiat, KMU IT, Ihailand
16-1 (Invited) The Fifty PV Roof-I op Chid ( onneiUd
Systems. 481
P SiiipuekpongEGA I, Nonthdbui i, I hailand
XXIX
16-2
16-3
(Invited) Can One Million PV Roof Tops be
Realistically Achieved in Thailand? 483
S Boonyathikain
Chulalongkorn Univeisity Bangkok, Thailand
Power Variation Islanding Detection Method
lot tht 3-phast Gnil-Corrnected Photovoltatc
System 487
J H Paik, J D Kim K J Yoo1 and B H Cho
Seoul National University Korea'Koica Institute of Energy Research Taejon Koica
17-4
16-4
16-5
Hvbnd Powei Station n a Ruial
489
16-6
16-7
Pilot Solai
Area
ISS Ismail A Omar and H Hassan
TNB Rescaich Sdn Bhd Sclangor Malaysia
Eneigy Tlovv Study of a PV/Wind/Diesel
Hybnd System in Taiutao National Park,Thailand 491
T Suvvannakum, U Boonbumroong, S Tei,
D Pongchawcc K Pewkaew and K Kirtikara
KMUTT, Bangkok Thailand
Photovoltaic Gi id Interfacing System 493
D C Martins R Demonti A S de Andrade and
0 H Goncalves
INEP UFSC Flonanopohs, Brazil
Optimisation ofWoiking Conditions of Solar Cells
in Ilybnd Solai Systems undei Conditions ol
South-East Poland 495
J M Olchowik', 1 Jozwik', R Tomaszewskr,
D Szymczuk1 J Adamczyk' T Cieplak1, K
Zabiclsk', J Mucha'1Lublin University of Tech 'ogy, Poland
1
Technical Univeisity of Biala Podlaska, Poland
1 ethnical Session 17
III-V Solar Cells 2
Room A 28 (Wed) 1300-1500
Chanpeison M Meuscl ISE & FMF GeimanyVite-Chairpeison S Supadech, KMITL, Thailand
17-1 (Invited) Super High Efficiency Multi-Junction
and Concentrator Solar Cells 497
M Yamaguchi', T Takamoto2 and K Araki''
Toyota Technological Institute, Nagoya, Japan1
Sharp Corp Nara Japan
17-2 Study on GaAs/Gc Interface in GaAs Solai Cells
on Ge Substrates 501
M B Chen, L X Wang, Z W Zhang, W Y Chi,J r Lu, X B Xiang'andX B Liao'
Sh mghai Institute foi Space Power, China' Chinese Academy of Sciences, Beijing, China
17-3 Packaging HI-V Tandem Solar Cells for
Practical Terrestrial Applications Achievable to
27% ot Module Efficiency by Conventional
Machine Assembly Technology. 503
K Aiaki M Kondo H Uozumi, N J Ekins
Ddukcs', M Yamaguchi'Daido Sttel Co
,
Ltd Nagoya, Japan'
Toyota I cchnological Institute, Nagoya Japan
17-5
17-6
17-7
P-on-N GaInP2/GaAs 1 andem Solar Cells 505
X B Xiang' M B Chen1 \ Z W Zhang2, J F Lu2,L X Wang1 W Y Chi2 and X B Liao1'Chinese Academy of Sciences Beijing, China
"Shanghai Jiaotong University, China3
Shanghai Institute of Space Powei Sources, China
MOVPE Growth and Charactenzatron or Dilute
IiixGa, xAs, HNy on GaAs for 1 eV Bandgap Solar
Cells^
507
S Sanorpim', F Nakajima2, R Katayama and K
Onabc11
Chulalongkorn University Bangkok Thailand
The University of Tokyo Japan
Quantum Dot Integration in Heterostructure
Solar Cells 509
S Suiaprapapich, S Thainoi, S Kanjanachuchaiand S PanyakeowChulalongkorn University, Bangkok Thailand
Can A Spectrally Robust Multi-Junction Solar
Cell Be Made Using Bypass Diodes? 511
N J Ekms-Daukes',K AiakrandM Yamaguchi11Toyota Technological Institute, Nagoya, Japan
'
Daido Steel Co,Ltd, Nagoya, Japan
Technical Session 18
II-VI Com. Semi 2
RoomB 28 (Wed) 1300-1500
Chairperson II S Ullal, NREL Golden, CO, U S A
Vice Chairperson K Yoodee Chulalongkorn Univ Thailand
18-1 (Invited) Large Area CIGS Modules: Pilot
Line Production and New Developments. 513
M CennemjakKniese', H D
M Powalla1
Kessler1, R
Dimmler21ZSW, Stuttgart, Germany
2Wuerth Solar GmbH & Co
Neckar, Germany
J Ebchardtl, F
Mohrmg1 and B
KG, Marbach am
18-2
18-3
18-4
18-5
Qualitative and Quantitative Analysis of
Granular CuInSe2 Solar Cells by Electron
Beam Induced Current. 517
G Glaser
Univeisity of Stuttgart, Germany
Electrical Performance ot Constituent
Material-Reused CIS-Based Thin Film
Modules. 519
K Kushiya, Mineo Ohshita and M Tanaka
Showa Shell Sekiyu K K, Kanagawa, Japan
Chemkal Process During Cd2+/NH3 Treatment
of Cu(In,Ga)(S,Se)2 Absorbers. 521
M Bar', H-J Mufflei1, M C Lux-Sterner', Ch-
H Fischer1, L Wemhardt2, C Heske2,E
Umbaclr, T PNiesen'andF Kaig31 Hahn-Meitner-Institut GmbH Berlin, Germany2
Exp Physik II, Umversitat Wurzburg, Germany3 Shell Solar GmbH, Munich, Germany
In-Situ Monitoring ot the Growth oT
Cu(In,Ga)Se2 Thin Films. 523
C Chityuttakan, P Chinvetkitvanich, K Yoodee
and S Chatraphorn
Chulalongkorn University, Bangkok, Thailand
XXX
18-6 Preparation of CulnSe2 Thin Films by Metal
Organic Decomposition with Oxidation
Reduction and Subsequent Selemzation Using
Diethylselenide.^
525
N Takayamd', H Nakanishi', S F Chichibu2, and
S Ando1'
Tokyo University of Science, Japan2
University of Tsukuba, Ibaraki, Japan
LO18-003 EBIC Investigations of Cu(In,Ga)Se2 Thin Film
Solar Cells. 527
S Ishizukal, K Sakurai', A Yamada', K Matsubaia1,P Fons', T Baba2, S Nakatnura2, H Nakanishi2 and
S Nik!11 National Inst of Advanced Industrial Science and
Technology, Ibaraki, Japan2
Tokyo University of Science, Japan
Technical Session 19
National Programs, Policies & Economics 3
Volume 2 Room C 28 (Wed) 1300-1500
Chairperson P D Maycock, PV Eneigy Systems, U S A
Vice-Chan person S Prascrtsan, PSU, Haad Yai, Thailand
19-1 (Invited) The First PV Mega Project in Thailand
for "The Right to Know". 529
W KhunchornyakongSolaitron, Bangkok, Thailand
19-2 (Invited) Preliminary Cost Analysis of Solar
Home Systems (SHS) for Rural Electrification in
Thailand. 531
D J Parsons
Thai Photovoltaics Ltd, Bangkok, Thailand
19-3 (Invited) Development Status and ApplicationMarket Prospect of China Photovoltaic ElectricityGeneration
. 537
L. Yi
Shenzen Tronhy S & T Development Co , Ltd,China
19-4 (Invited) Photovoltaic Power for Microenterprisc. 541
C F GayGreenstar Foundation, Los Angeles, USA
19-5 The Potential of PV Market for Electrification inthe Mekong Countries. 543
P Thanarak
Naresuan University, Pitsanuloke, Thailand
19-6 Assessment of Photovoltaic Power Markets. 545
K Nandan and U Bhattacharjce
University of Massachusetts at Lowell, U S.A
Technical Session 20
Modules, Systems &Applications 5
Room D 28 (Wed) 1300-1500
Chairperson H Outhred, UNSW, Sydney, Australia
Vice-Chairperson B Fungummasan, KMUTT, Thailand
20-1 (Invited) Progress in Australian Photovoltaic
and Hybrid Applications. 547
M Watt
UNSW, Sydney, Australia
20-3 Simulation of Transient Performance of a
Hybrid PV/T Solar Water I leatmg System. 551
Y Sukamongkol1, S Chungpaibulpatana1, B
Limmechotkchai1 and P Siipadungthanr'Sill, Ihdinmasat Univ
,Pathumthani Ihailand
2 Kasetsait Univ, Bangkok, I hailand
LO20-033 Time Responses of a C ivstalline Silicon Solar
Cell to VaiMiig Light Inputs : I univalent
C oniponents Detei nunation. 553
N Wongyao, K Kimkara, C hvataie and D
ChenvitlhyaKMUI I, Bangkok, Thailand
20-4 PV-Bio Diesel from Fanner's Diesel Enginefor Hybrid Solar Home System. 555
J Rakwithian', J Sehnnd', W Rakvvitliian2'
Kassel Univeisity Wilhelmshochci, Kassel,
Geimany2
Naicsuan Univeisity, Pitsanuloke, Ihailand
LO20-034 Effects ol Solai Radiation Level and
Fluctuations on Voltage Vaiiation and
Harmonics at the Point ol Common Coupling(PCC) of a PV-GHd Interactive System. 557
J Thongpion, U Sangpamth, (' I linsakul,K Kirtikaia and ( Jivaeate
KMUTT, Bangkok, Ihailand
20-5 Comparative Study on Performance ol PV
and Wind Water Pumping (or Small-Scale
Piped Irrigation. 559
S Thanopanuwat1 ant) W Iayatr1
Royal Irrigation Dept , Bangkok, Ihailand2CMU, diking Mar, Thailand
Poster Session 2
Room! 28 (Wed) 1510-1630
Ut-V
P-l 12 Storing Sunlight Performance ol (lie Solar
Energy Cell with Phosphorescent System. 561
L Bao)un
Shenyang Eneigy Resource k. Biology Matetial
Inst, Shenyang, China
P-l 13 Analysis of Radiation Response ol 'I riple-Junction Space Solar Cells and Component Sub-
Cells. 563
'1 Sumitd1, M Imai/timi1, S Kuvsaprnal, I
Ohshima2, A Ohr, M Yamaguchi'1Japdn Aeiospace I-xploiation Agency, Ibaraki,Jupun
2
Japan Atomic Energy Research Institute, Gtinnu,
lapanI
Toyota Technological Institute, Nugova, Japan
P-l 14 1 MeV Electron liradiation I'fleets on G.i\s
Solar Cell Giown on Si Substrate. 565
N Chundtasekauui, T Soga, Y Imi/uka,II Tdguchi, I Jimbo and M Imai/umi
Nagoya Institute ol I ethnology, lapan