PHOTOTRANSISTORS - Steven Engineering › Tech_Support › PDFs › 31IRPHTTRA.pdfFig. 1 Collector Current vs Ambient Temperature gra_039.ds4 Ambient temperature - °C N o r m a l

Silicon PhototransistorSDP8405

DESCRIPTION

FEATUREST-1 plastic package•

20¡ (nominal) acceptance angle•

Consistent optical properties•

Wide sensitivity ranges•

Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes

•

The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.

(.51)

.020SQ.LEADTYP

.050

(1.27)

DIA.(3.94)

.155

EMITTER

COLLECTOR

DIA..125 (3.18)

.115 (2.92)

MIN.(12.7).500

.03(.76).180(4.57)

.200(5.08)

MAX.(6.35).250

.05(1.27)

DIM_100.ds4

INFRA-22.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h116

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com


ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Collector-Emitter Voltage 30 VEmitter-Collector Voltage 5 V

Power Dissipation 70 mW [À] Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡C

Soldering Temperature (5 sec) 240¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.

SCHEMATIC


h 117



SWITCHING TIME TEST CIRCUITcir_015.cdr

SWITCHING WAVEFORMcir_004.cdr

Responsivity vsAngular Displacement gra_047.ds4

Angular displacement - degrees

Rel

ativ

e re

spon

se

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Collector Current vsAmbient Temperature gra_039.ds4

Ambient temperature - °C

Nor

mal

ized

col

lect

or

curr

ent

0.0

0.4

0.8

1.2

1.6

2.0

0 10 20 30 40 50 60 70 80

Fig. 2

Dark Current vsTemperature gra_301.cdr

Fig. 3 Non-Saturated Switching Time vsLoad Resistance gra_041.ds4

Load resistance - Ohms

Res

pons

e tim

e -

µs

1

10

100

10 100 1000 10000

Fig. 4


h118



Spectral Responsivity gra_036.ds4

Wavelength - nm

Rel

ativ

e re

spon

se

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

400 600 800 1000 1200

Fig. 5 Coupling Characteristicswith SEP8505 gra_029.ds4

Lens-to-lens separation - inches

Ligh

t cu

rren

t - m

A

0.1

0.2

0.4

1

2

4

10

0.01 0.2 0.4 0.7 1 0.02 0.04 0.1

0.7

7

VCE = 5 VIF = 25 mATA = 25 °C

Fig. 6

All Performance Curves Show Typical Values


h 119



DESCRIPTION

FEATURESSide-looking plastic package•




•

The SDP8406 is an NPN silicon phototransistor molded in a side-looking clear plastic package. The chip is positioned to accept radiation through a plastic lens from the side of the package.

DIM_017.ds4

INFRA-21.TIF




h120











SCHEMATIC


h 121







Rel

ativ

e re

spon

se

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-60 -45 -30 -15 0 +15 +30 +45 +60



Nor

mal

ized

col

lect

or

curr

ent

0.0

0.4

0.8

1.2

1.6

2.0

0 10 20 30 40 50 60 70 80

Fig. 2




Res

pons

e tim

e -

µs

1

10

100

10 100 1000 10000

Fig. 4


h122




Wavelength - nm

Rel

ativ

e re

spon

se

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

400 600 800 1000 1200



Ligh

t cur

rent

- m

A

0.1

0.2

0.4 0.6

1.0

2

4 6

10

0.01 0.02 0.05 0.1 0.2 0.5 1.0

IF = 20 mAVCE = 5V

TA = 25 °C

Fig. 6



h 123



DESCRIPTION

FEATURESEnd-looking plastic package•


Low profile for design flexibility•

Mechanically and spectrally matched to SEP8507 infrared emitting diode

•

The SDP8407 is an NPN silicon phototransistor molded in an end-looking black plastic package. The chip is positioned to accept radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification.

DIM_018.ds4

INFRA-16.TIF




h124








Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85CStorage Temperature Range -40¡C to 85¡C



SCHEMATIC


h 125







Rel

ativ

e re

spon

se

0.0

0.1 0.2

0.3 0.4

0.5

0.6 0.7

0.8 0.9

1.0

-160 -120 -80 -40 0 +40 +80 +120 +160



Nor

mal

ized

col

lect

or

curr

ent

0.0

0.4

0.8

1.2

1.6

2.0

0 10 20 30 40 50 60 70 80

Fig. 2


Fig. 3 Spectral Responsivity gra_036.ds4

Wavelength - nm

Rel

ativ

e re

spon

se

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

400 600 800 1000 1200

Fig. 4



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h 127



DESCRIPTION



Enhanced coupling distance•

Internal visible light rejection filter•

Low profile for design flexibility•


Mechanically matched to SEP8736 infrared emitting diode

•

The SDP8436 is an NPN silicon phototransistor molded in a black plastic package which combines the mounting advantages of a side-looking package with the narrow acceptance angle and high optical gain of a T-1 package. The SDP8436 is designed for those applications which require longer coupling distances than standard side- looking devices can provide, such as touch screens. The device is also well suited to applications in which adjacent channel crosstalk could be a problem. The package is highly transmissive to the IR source energy while it provides effective shielding against visible ambient light.

DIM_019.ds4

INFRA-82.TIF




h128











SCHEMATIC


h 129







Rel

ativ

e re

spon

se

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40



Nor

mal

ized

col

lect

or

curr

ent

0.0

0.4

0.8

1.2

1.6

2.0

0 10 20 30 40 50 60 70 80

Fig. 2




Res

pons

e tim

e -

µs

1

10

100

10 100 1000 10000

Fig. 4


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Wavelength - nm

Rel

ativ

e re

spon

se

0.0

0.10.2

0.30.4

0.50.6

0.7

0.8

0.9

1.0

600 700 800 900 1000 1100 1200



Nor

mal

ized

ligh

t cu

rren

t 0.001

0.1

1.0

10

0.1 1.0 10

0.01

Fig. 6



h 131


Low Light Rejection PhototransistorSDP8475-201

DESCRIPTION

FEATUREST-1 plastic package•

Low light level immunity•



•

(.51)

.020SQ.LEADTYP

.050

(1.27)

DIA.(3.94)

.155

EMITTER

COLLECTOR

DIA..125 (3.18)

.115 (2.92)

MIN.(12.7).500

.03(.76).180(4.57)

.200(5.08)

MAX.(6.35).250

.05(1.27)

DIM_100.ds4

INFRA-22.TIF



The SDP8475 is an NPN silicon phototransistor which internal base-emitter shunt resistance. Transfer molding of this device in a clear T-1 plastic package assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.

Distinguising Feature:

This device incorporates all of the desired features of a standard phototransistor with the advantage of low light immunity. The phototransistor switching occurs when the incident light increases above the threshold (knee point). When the light level exceeds the knee point of the device, it will function as a standard phototransistor. Chart A illustrates the light current output of the low light rejection phototransistor as compared to a standard phototransistor with similar sensitivity.

Typical Application Uses:

Ideally suited for use in applications which require ambient light rejection, or in transmissive applications where the interrupter media is semi- transparent to infrared energy. This device also provides high contrast ratio in reflective applications where unwanted background reflection is a possibility.


h136







Collector-Emitter Voltage 30 VPower Dissipation 70 mW [À]

Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C


SCHEMATIC


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Rel

ativ

e re

spon

se

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40


Wavelength - nm

Rel

ativ

e re

spon

se

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

400 600 800 1000 1200

Fig. 2

Dark Current vsTemperature gra_310.ds4

D

ark

Cur

rent

- n

A

0.01

0.1

1

10

100

1000

-55 -35 -15 5 25 45 85 105 125

Free-air temprerature - °C

65

Vce = 15H = 0



Nor

mal

ized

col

lect

or

curr

ent

0.0

0.4

0.8

1.2

1.6

2.0

0 10 20 30 40 50 60 70 80

Fig. 4



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SDP8475-201Low Light Rejection Phototransistor

Chart A. Low Light Rejection Phototransistor vs. Standard Phototransistor

0.00

1.00

2.00

3.00

4.00

5.00

6.00

7.00

0.000 0.125 0.250 0.375 0.500

Source intensity - mW/cm 2

Ligh

t cur

rent

- m

A

Min. LightCurrent Slope

Max. LightCurrent Slope

Min. LightCurrent SlopeStandard

Max. LightCurrent SlopeStandard

Designing with the Low Light RejectionPhototransistor:The Low Light Rejection detector is tested at differentincident light levels to determine adherence to thespecified knee point and light current slope. This methodassures proper functionality vs. standardphototransistors, and guarantees required light currentoutput.

The light current slope is the change in light currentoutput at two given source irradiances divided by thechange in the two source irradiances.

(Formula # 1)IL Slope = [IL 1 (@ H1 ) - IL2 (@ H2 )] / [H1 - H2]

Where:• • IL slope is the light current slope in mA/mW/cm

2

• IL is the light current output in mA• H is the source intensity in mW/cm2

Chart A shows the specified limits of light current slopefor the low light rejection phototransistor which begins itsslope at the typical knee point, 0.125mW/cm2. To make aclear distinction between this device and a standardphototransistor, light current slopes for high and lowsensitivity standard phototransistors are also shown.Note that for phototransistors of the same gain, theslopes of the two products are parallel.

The knee point, the source irradiance needed to increaseIL to 50uA, is a necessary parameter for circuit design.All variation in the knee point will be offset by theinternally guardbanded light current slope limits. Theappropriate formula for circuit design is the following:

(Formula # 2)IL = IL slopeMIN. * (HA - HKP)

Where:• IL is the light current output in mA• IL slopeMIN. is the minimum limit on the light current

slope (i.e. 4.0mA/mW/cm2)• HA is the source light incident on the detector for the

application• HKP is the specified level of source light incident on

the detector at the typical knee point (i.e. 0.125mW/cm2)

Example :To design a transmissive sensor with two of Honeywell’sstandard components, the SEP8505-002 and theSDP8475-201, it is first necessary to determine theirradiance level in mW/cm2 that will be incident on thedetector. The application conditions are the following:

139Honeywell reserves the right to makechanges in order to improve design andsupply the best products possible.



Supply voltage = 5VDistance between emitter and detector = 0.4 in.(10.16mm )IRED drive current = 20mA

The SEP8505-002 gives 1.0mW/cm2 min. to 4.0mW/cm2

max. under the above conditions. To obtain minimumlight current output, use the minimum irradiance limit.

Light current output = IL slopeMIN. * (HA - HKP)Light current output = 4.0 mA/mW/cm2 min. * (1.0mW/cm2 min. - 0.125 mW/cm2) = 3.5mA min.

Honeywell reserves the right to makechanges in order to improve design andsupply the best products possible.

140



DESCRIPTION


Low light level immunity•



•

DIM_017.ds4

INFRA-21.TIF



The SDP8476 is an NPN silicon phototransistor which internal base-emitter shunt resistance. Transfer molding of this device in a clear T-1 plastic package assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.

Distinguising Feature:

This device incorporates all of the desired features of a standard phototransistor with the advantage of low light immunity. The phototransistor switching occurs when the incident light increases above the threshold (knee point). When the light level exceeds the knee point of the device, it will function as a standard phototransistor. Chart A illustrates the light current output of the low light rejection phototransistor as compared to a standard phototransistor with similar sensitivity.

Typical Application Uses:

Ideally suited for use in applications which require ambient light rejection, or in transmissive applications where the interrupter media is semi- transparent to infrared energy. This device also provides high contrast ratio in reflective applications where unwanted background reflection is a possibility.


h142







Collector-Emitter Voltage 30 VPower Dissipation 100 mW [À]

Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C


SCHEMATIC


h 143







Rel

ativ

e re

spon

se

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-60 -45 -30 -15 0 +15 +30 +45 +60


Wavelength - nm

Rel

ativ

e re

spon

se

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

400 600 800 1000 1200

Fig. 2

Dark Current vsTemperature gra_310.ds4

D

ark

Cur

rent

- n

A

0.01

0.1

1

10

100

1000

-55 -35 -15 5 25 45 85 105 125

Free-air temprerature - °C

65

Vce = 15H = 0



Nor

mal

ized

col

lect

or

curr

ent

0.0

0.4

0.8

1.2

1.6

2.0

0 10 20 30 40 50 60 70 80

Fig. 4



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Chart A. Low Light Rejection Phototransistor vs. Standard Phototransistor

0.00

1.00

2.00

3.00

4.00

5.00

6.00

0.00 0.25 0.50 0.75 1.00

Source intensity - mW/cm 2

Ligh

t cur

rent

- m

A

Min. LightCurrent Slope

Max. LightCurrent Slope

Min. LightCurrent SlopeStandardMax. LightCurrent SlopeStandard

Designing with the Low Light RejectionPhototransistor:The Low Light Rejection detector is tested at differentincident light levels to determine adherence to thespecified knee point and light current slope. This methodassures proper functionality vs. standardphototransistors, and guarantees required light currentoutput.

The light current slope is the change in light currentoutput at two given source irradiances divided by thechange in the two source irradiances.

(Formula # 1)IL Slope = [IL 1 (@ H1 ) - IL2 (@ H2 )] / [H1 - H2]

Where:• • IL slope is the light current slope in mA/mW/cm

2

• IL is the light current output in mA• H is the source intensity in mW/cm2

Chart A shows the specified limits of light current slopefor the low light rejection phototransistor which begins itsslope at the typical knee point, 0.25mW/cm2. To make aclear distinction between this device and a standardphototransistor, light current slopes for high and lowsensitivity standard phototransistors are also shown.Note that for phototransistors of the same gain, theslopes of the two products are parallel.

The knee point, the source irradiance needed to increaseIL to 50uA, is a necessary parameter for circuit design.All variation in the knee point will be offset by theinternally guardbanded light current slope limits. Theappropriate formula for circuit design is the following:

(Formula # 2)IL = IL slopeMIN. * (HA - HKP)

Where:• IL is the light current output in mA• IL slopeMIN. is the minimum limit on the light current

slope (i.e. 1.0mA/mW/cm2)• HA is the source light incident on the detector for the

application• HKP is the specified level of source light incident on

the detector at the typical knee point (i.e. 0.125mW/cm2)

To design a transmissive sensor with two of Honeywell’sstandard components, the SEP8506-003 and theSDP8476-201, it is first necessary to determine theirradiance level in mW/cm2 that will be incident on thedetector. The application conditions are the following:

Honeywell reserves the right to makechanges in order to improve design andsupply the best products possible.

145



Supply voltage = 5VDistance between emitter and detector = 0.535 in.(13.6mm)IRED drive current = 20mA

The SEP8506-003 gives 0.45mW/cm2 min. to0.90mW/cm2 max. under the above conditions. To obtainminimum light current output, use the minimum irradiancelimit.

Light current output = IL slopeMIN. * (HA - HKP)Light current output = 1.0 mA/mW/cm2 min. *(0.45mW/cm2 min. - 0.25 mW/cm2) = 0.2mA min.

146 Honeywell reserves the right to makechanges in order to improve design andsupply the best products possible.


PHOTOTRANSISTORSSilicon Phototransistor SDP8405Silicon Phototransistor SDP8406Silicon Phototransistor SDP8407Silicon Phototransistor SDP8436Low Light Rejection Phototransistor SDP8475201Low Light Rejection Phototransistor SDP8476201

Documents

PHOTOTRANSISTORS - Steven Engineering › Tech_Support › PDFs › 31IRPHTTRA.pdfFig. 1 Collector Current vs Ambient Temperature gra_039.ds4 Ambient temperature - °C N o r m a l