Photon Counting Microdetectors and Applications ... Cova IEEE-LEOS Distinguished Lecturer Photon Counting Microdetectors and Applications: Retrospect and Prospect Politecnico di Milano

Micro Photon Devices, Via Stradivari 4, 39100 Bolzano, Italy, www.micro-photon-devices.com

Sergio CovaIEEE-LEOS Distinguished Lecturer

Photon Counting Microdetectors and Applications:Retrospect and Prospect

Politecnico di Milano – DEI, Milano, Italy

PoliMi - Politecnico di Milano, DEI IEEE - LEOS DL 2005

Biography - Dr. Sergio Cova

Full professor of Electronics since 1976 @ Politecnico di Milano (POLIMI), Italy

Author of over a hundred and seventy papers in international refereed journals and conferences and of five international patents (USA and Europe)

Pioneered the development of Single-Photon Avalanche Diodes (SPAD), inventing the active-quenching circuit (AQC). His research group developed AQCs in successive generations and was the first (and so far is the only one) to develop monolithic integrated AQCs.

Contributed to diversified applications of photon-counting detectors: fluorescence measurements for DNA and protein analysis and single-molecule studies; characterization of optical fibers and laser; adaptive optics systems in telescopes; non-invasive testing of ULSI circuits; and others.

In 2005 established with other colleagues of Politecnico di Milano the university spin-off company MPD Micro-Photon-Devices, intended for producing industrially and making widely available to experimenters the photon counting microdetectorsdeveloped in the research at POLIMI.


Outline

Introduction: Single Photon (SP) Detection

Micro-Detectors: Single Photon Avalanche Diodes

(SPAD) and associated electronics

Application Cases

Conclusions and Outlook


Introduction: Single Photon (SP) Detection

Why SP Detection

How to Detect SP

Why Solid-State SP Micro-Detectors


Electronic Noise impairs Detector Sensitivity

ELECTRONICSLOADDETECTOR

Detector Signal

1 Photon 1 Electron

Detector Noise(Primary Dark-Current)QE

Electronic Noise:dominant !!


Overcoming the Electronic Noise Limit by

Detecting SP

ELECTRONICSLOADDETECTOR

Detector Signal

1 Photon 1 Electron

Detector Noise(Primary Dark-Current)QE

Electronic Noise

CurrentBoosterProcess


Why Solid-State SP Micro-Detectors

Typical microelectronic advantages:

miniature size, low voltage, low power, rugged, reliable,

suitable to integration, insensitive to magnetic fields and RF, etc.

Improved basic performance:

- inherently higher Photon Detection Efficiency

over the Visible (V) and Infrared (IR) spectral range

- comparable or lower noise (dark counting rate)

- better photon timing

With respect to vacuum tube PhotoMultipliers (PMT)


Micro-Detectors: Single Photon Avalanche Diode (SPAD) Devices and electronics

SPAD Devices: Retrospect and Evolution

From Device Physics to Detector Performance

Active Quenching Circuit (AQC)

SPADs for the Infrared Spectral Range


Current Booster Process in Micro-Detectors

Avalanche multiplication of charge carriers

by impact-ionization in reverse-biased p-n semiconductor junction

can be either exploited in

Linear amplifying mode Avalanche Photo Diodes APD

or exploited in

Trigger or Geiger Mode Single Photon Avalanche Diode

“SPAD”


• Bias: well ABOVE breakdown

• Geiger-mode: it’s a TRIGGER

device!!

• Gain: meaningless !!

• Bias: slightly BELOW breakdown

• Linear-mode: it’s an AMPLIFIER

• Gain: limited < 1000

Avalanche PhotoDiode Single-Photon Avalanche Diode

APD SPAD


SPAD Micro-Detectors: the Origin

@ Shockley Laboratory in early 60’s : Avalanche Physics Investigation

Basic insight

Model of behavior above Breakdown

Single-Photon pulses observed, but …

…application limited by device features and quenching circuit !

R.Haitz, J.Appl.Phys. 35, 1370 (1964) and 36, 3123 (1965)


for SPAD operation

mandatory

to avoid local Breakdown, i.e.

edge breakdown guard-ring feature

microplasmas uniform area, no precipitates etc.

but for good SPAD performance.....

...further requirements!!


Earlier Silicon Diode Structures

“Thick” SPAD“Thin” SPAD

McIntyre’s reach-through diodeHaitz’s planar diode


PoliMi Si-SPAD PKI* Si-SPAD (SLIKTM )

Planar epitaxial structure

typical active region:

10 to 100 µµµµm diameter

1 µµµµm thick

Reach-Trough structure


190 µµµµm diameter

30 µµµµm thick

*Perkin Elmer Optoelectronics


Dark-Counting Rate (primary noise)

Generation - Recombination Centers Field-Assisted Generation

Free Carrier Generation


Carrier Trapping and Delayed Release Afterpulsing

NB: minority carrier traps !!


Trapping and Afterpulsing

operation @ lower temperature

lower generation rate

slower trap release

hence

primary dark-counting rate is

reduced

but afterpulsing is enhanced !!

S.Cova, A.Lacaita, G.Ripamonti, IEEE Electron.Dev.Lett. 12, 685 (1991)


Low Detector Noise

For low dark-counting rate

Reduce GR center concentration

Reduce Field-assisted generation

For low afterpulsing probability

Reduce deep level concentration (minority carrier traps)

Reduce trapping and retriggering probability

- Technology issues and device design issues

- Wide sensitive area requires efficient gettering!!


Photon Detection Efficiency (PDE)

Carrier Photogeneration

And

Avalanche Triggering !!

W.Oldham, P.Samuelson, P.Antognetti, IEEE Trans. Electron Devices ED-19, 1056 (1972)

higher excess bias voltage

for higher PDE !!


Photon Detection Efficiency (PDE)


200 400 600 800 1000 1200

0.01

0.1

1

10

100

Qu

an

tum

eff

icie

nc

y, Q

E %

Wavelength nm

Planar SPAD PerkinElmer

C4880-21 S25 PMT

S1 PMT

PDE - Detector Comparison


Photon Timing


Photon Timing: Diffusion Tail

carrier diffusion in neutral

layer

delay to avalanche

triggering

G.Ripamonti and S.Cova, Sol. State Electronics 28, 925 (1985)


Photon Timing: main peak width

Statistical Fluctuations in the Avalanche

Vertical Build-up (minor contribution)

Lateral Propagation (major contribution)

- via Multiplication-assisted diffusion

A. Lacaita, M.Mastrapasqua et al, APL 57, 489and El.Lett. 26, 2053 (1990)

- via Photon-assisted propagation P.P.Webb, R.J.McIntyre RCA Eng. 27-3, 96 (1982); A.Lacaita et al, APL 62, 606 (1993)


Avalanche Lateral Propagation

Photon-assisted

A. Spinelli, A. Lacaita, IEEE TED 44, 1931 (1997)

Multiplication-

assisted

higher excess bias voltage improved time-resolution


Photon Timing: SLIKTM reach-trough

structure

H.Dautet, ......, R.J. McIntyre and P. Webb , Appl.Opt. 32, 3894 (1993)


Photon Timing: planar Epitaxial structure

A.Lacaita, M.Ghioni, S.Cova, Electron. Lett. Electron.Lett. 25, 841 (1989)

neutral p layer thickness w

tail lifetime ττττ = w2 / ππππ2Dn


Photon Timing comparison

Planar SPADPerkinElmer SPCM, SLIKTM diode


Reach-Through SLIKTM diode

Reach-Trough structure

Typical active region:

200 µµµµm diameter

• QE: 30%@500nm; 70%@700nm • Dark Counts: 150 c/s • FWHM: > 300ps • High voltage : 300 to 400V

• High dissipation

• Delicate and degradable

• Dedicated technology, high cost

• NOT COMPATIBLE with array detectorand integrated circuits

H.Dautet et al, Appl.Opt. 32, 3894 (1994)


Planar Single Photon Avalanche Diodes

Planar structure


20 -100 µµµµm diameter

• Good QE and low noise

• Picosecond timing

• Low voltage : 15 to 40V

• Low power : cooling not necessary

• Standard Si substrate

• Planar fabrication process

• COMPATIBLE with array detector and integrated circuits

• Robust and reliable

• Low-cost

A.Lacaita, M.Ghioni, S.Cova, Electron.Lett. 25, 841 (1989)


PoliMi Si SPADReach-Through Si

SPAD (SLIKTMTM )• Very good QE and low noise

• Sub-nanosecond photon timing

• High voltage : 300 to 400V

• High dissipation : Peltier cooler mandatory

• Ultra-pure high-resistivity Si substrate

• Dedicated fabrication process

NOT COMPATIBLE with array detectorand IC’s

• Delicate and degradable

• Very expensive

• SINGLE COMMERCIAL SOURCE

• Good QE and low noise

• Picosecond photon timing

• Low voltage : 15 to 40V

• Low power : cooler not necessary

• Standard Si substrate

• Planar fabrication processCOMPATIBLE with array detector

and IC’s

• Robust and rugged

• Low-cost

• NEW COMMERCIAL SOURCE


Active Quenching Circuit (AQC)


Passive quenching is simple...

Current Pulses

Diode Voltage

… but suffers from

long, not well defined deadtime

low max counting rate < 100kc/s

photon timing spread

et al


Active quenching….

...provides:

short, well-defined deadtime

high counting rate > 1 Mc/s

good photon timing

standard logic output

Output Pulses

P.Antognetti, S.Cova, A.Longoni, IEEE Ispra Nucl.El.Symp. (1975), Euratom Publ. EUR 5370e


Active Quenching Evolution

Earlier modules

in the 80’sCompact modules

in the 90’sIntegrated AQC

today


F.Zappa, S.Cova, M.Ghioni, US patent 6,541,752 B2, 2003

(prior. March 9, 2000)

iAQC: integrated Active Quenching Circuit

Practical advantages

Miniaturization mini-module detectors Low-Power Consumption portable modules Rugged and Reliable

Plus improved performance

Reduced Capacitance Improved Photon Timing Reduced Avalanche Charge Reduced Afterpulsing Reduced Photoemission reduced crosstalk

in arrays


0 40 80 120 160 200

Threshold voltage (mV)

25

75

125

0

50

100

150

Tim

e r

es

olu

tio

n F

WH

M (

ps)

Signal pick-up for improved photon-timing

Avalanche current sensing

at very low level (< 100 µA)

Can be added to any AQC

S.Cova, M.Ghioni, F.Zappa, US patent No. 6,384,663 B2, 2002

(prior. March 9, 2000)

50 µm active

area diameter


Recent advancement

Wide active-area SPAD

100µµµµm diameter

35 ps FWHM resolution

at room temperature


Single Photon Counting & Timing Module

Planar SPAD detector

+ iAQC

Compact and user-

friendly

Photon Detector Module

(PDM)+ Timing pick-off network


Photon Detector ModuleSilicon Chip

SPAD Chip and Detector Module


Easy to use

Robust and Rugged

Low power consumption

Low cost

Less than 50ps timing resolution

Large area, up to 100µm diameter

Photon Detection efficiency, 47% @ 532nm, 5V overvoltage

www.micro-photon-devices.com


Comparison of Technology

MPD’s photon counting module offer the best performance

when fast timing resolution is required.

MPD’s technology provides Superior detection efficiency from 400 to 600nm

Parameter SPAD & AQ circuit

(MPD Technology)

Integrated SPAD &

passive quench

Reach-Through SPAD Units

Detector Diameter 20 to 100 20 to 50 200 µmPhoton Detection Efficiencies@ 400nm@ 532nm

@ 650nm

25

4735

18

35 25

5

4065

%

Dark Counts20um50um

100um

250 typ (uncooled)

100 max (cooled)1000 max (cooled)

50 max (cooled)

200 max (cooled)NA <100

cps

Timing Resolution <50 40 300 - 600 psAfter Pulsing 0.5 typ, 1.5 max 3 max 0.5 typ %

Max Continuous Counting Rate 15 11,5 15 Mcps

Array development

Monolithic arrays possible,

60 element array demonstrated. Limited to 100-200 pixel

arrays.

Monolithic arrays possible. Large area arrays possible

with small pixels - TBD.

Monolithic arrays not possible

Technology Comparison


SPADs for the Infrared Spectral Range


Germanium SPAD devices

Similar to silicon devices, but

deep cooling mandatory (liquid nitrogen and lower)

absorption edge shifts below 1500nm @ low

temperature

strong trapping effects

strong field-assisted generation effects

static situation of technology

A.Lacaita, P.A.Francese, F.Zappa, S.Cova, Appl.Opt. 33, 6902 (1994)


InGaAs-InP SPAD devices


Photon Counting @ 1550nm

Detection Efficiency vs. Overvoltage

@ various temperatures

Data obtained using Princeton Lightwave InGaAs SPADs

Dark counting rate vs. temperature

@ various overvoltages Dark counting rate vs. hold-off

time @ various temperatures

Timing Resolution

0.0 0.5 1.0 1.5 2.0 2.5 3.00

1x103

2x103

3x103

4x103

5x103

6x103

7x103

FWHM=65ps

Co

un

ts (

cp

s)

Time [ns]

T = 200 K


InGaAs-InP SPAD devices

Complex device structure with heterojunctions

Moderately deep cooling required (up to about 220K)

Strong field-assisted generation effects

Very strong trapping effects with very long release time

Free-running operation with long deadtime (> 100micros)

In practice limited to fast-gated operation

Technology in evolution

A.Lacaita, F.Zappa, S.Cova, P.Lovati, Appl.Opt. 35, 2986 (1996)


Application Cases


Microsystems for Genetic Analysis

Single Molecule Spectroscopy

Adaptive Optic Systems

Non-Invasive Testing of ULSI Circuits

Quantum Cryptography (QKD)

Outline


Microsystems for DNA analysis

Current trend

• system miniaturization

• minimal sample quantity

• low cost of operation

Ultra high sensitivityrequired to the detector

Valid for both Capillary Electrophoresis (CE)separation

and Microarrays of DNA and Proteins


Capillary Electrophoresis (CE) for DNA fragment

separation and analysis

DNA Fragment separation

Electropherogram

Time (min)

Inte

ns

ity (

a.u

.)


Micro-Chip Electrophoresis (MCE)

Injection Separation

8 cm

laser


Looking inside the MCE apparatus...

• Compact & low-cost set-up with:

• Fully automated operation

• Laser diode excitation of fluorescence

• Controlled chip temperature

• Dual wavelength detection

• Dual HV power supply (0-5kV)

• Confocal optical scheme

• Remote control

• Problem debug via internet


.....with a closer look to the Micro-Chip Holder


DNA fragment separation: MCE vs CE

Separation of DNA

fragments

micro-sample

in MCE set-up

(100 s time scale)

Separation of DNA

fragments

macroscopic sample

in ordinary CE set-up

(50 min time scale)


Sensitivity attained in MCE

12141

6181101

121141161

181

0

10000

20000

30000

40000

50000

60000

70000

80000

Static measure5ng/ul

0,5ng/ul

0,05ng/ul

100pM oligonucleotide label led with CY 5

300

400

500

600

700

800

900

1000

1100

1200

1300

0 50 100 150 200Time [Sec.]

Co

un

ts [

c/s

]

S/N=35

CE Separation in glass microchip

run buffer: TAPS-TRIS 100mM pH 8.5.

Sample : 23 mer oligonucleotide labelled with CY 5

Detection limit @ S/N=3 : 1pM

corresponds to < 30 molecules in the injection volume of

50pL


“An array is an orderly arrangement of probes with known identity

which are used to determine complementary targets”

Microarrays


DNA Microarrays vs Protein Microarrays

DNA Microarrays:

Very High number of spots > 10000

Sample Amplification by PCR

Protein Microarrays:

Moderate number of spots < 100

NO sample Amplification


SPAD Matrix Detector


High-Sensitivity Parallel Detection

Basic goals - reduction of the acquisition time

- miniaturization, lower system cost

Photon Counting in

Parallel FCS measurements in life sciences

Single photon spectroscopy

Adaptive optics in astronomy

Photon Timing in

Fluorescence lifetime imaging

3-D imaging with millimeter resolution


6x8 SPAD Matrix Detector

50 µm pixel diameter

240 µm pitch

4 interleaved sectors including 12 pixels

with common anode

sector 1

sector 2

sector 3

sector 4


Single pixel addressing

12 AQCs in parallel

20 bit counters

Peltier cooling

with digital temperature control

Single bias supply (5V)

Remote Full Control

through USB port

2-D photon counting module


Size 20cm x 8cm x 4cm

2-D photon counting module





Measurement on Measurement on singlesingle molecules, molecules, not ensemble not ensemble averageaverage

RealReal--timetime measurement of molecule evolution measurement of molecule evolution

Informations on the molecule Informations on the molecule dynamicsdynamics

Focus on molecules of biological interest : proteinsFocus on molecules of biological interest : proteins

FRET : Fluorescence Resonance Energy Transfer

Nano-scale structural changes in single protein molecules


Idea of Sunney Xie and Haw Yang* (Harvard University): to probe Single-Molecule Protein Dynamics by a correlation analysis of fluctuations

in real time of fluorescent photon delay with respect to laser excitation

* H. Yang, G. Luo, P. Karnchanaphanurach, T.M. Louie, I. Rech, S.Cova, L. Xun, and X. Sunney Xie, SCIENCE ( 2003)


Single Photon Timing Module SPTM

Compact (82x60x30mm)

Single power supply (+15V)

Controlled Temperature

(Peltier cell)

Software controlled settings

On-board fast counters

RS-232 data transmission

I.Rech et al., IEEE J. of Sel. Topics in Quantum Electronics, vol.10, 788 (2004)


SPTM performance in the Harvard set-up

Instrumental Response Function (IRF)

with SPTM and with PerkinElmer SPCM

Time-resolution: 60ps

Dark Counts: down to 5 c/s

Quantum Efficiency: 45% @

500nm


Single Molecule Fluorescent Decay

Single Fre–FAD complex

measured with SPTM (line).

with PerkinElmer SPCM (circles)

the shortest lifetime components

are not resolved


Adaptive Optics Systems


STRAP = System for Tip-tilt Removal with Avalanche Photodiodes

collaboration: ESO - Microgate - PoliMi

STRAP Adaptive-Optics System of the VLT Observatory (Chile) European Southern Observatory - ESO

D.Bonaccini et al,

Proc. SPIE Vol. 3126, p. 580-588,

Adaptive Optics and

Applications; R.K.Tyson, R.Q.Fugate

Eds., 1997


Hybrid Quad- SPAD detector

4 SPAD PerkinElmer SLIK®

4 hybrid AQC

4 E2PROMPeltier

Spacer Ceramic

Centering Ceramic

2x2 lenslet array


STRAP – compatible

geometry

100µm, 80µm, 50µm

pixel diameter

New development: Monolithic Quad-

SPAD detector


New development: SPADA Wavefront

Sensor

SPADA: Single Photon Avalanche Diode Array

collaboration

PoliMi, IMM-CNR Bologna, UniPisa, Osservatorio di Catania, ESO

F. Zappa, S.Tisa, P.Maccagnani, D.Bonaccini Calia, G.Bonanno, R.Saletti

"Pushing Technologies: Single Photon Avalanche Diode Arrays"

Proc. SPIE Vol. 5490, p. 1200-1210, Advancements in Adaptive Optics;

D. Bonaccini Calia, B.L. Ellerbroek, R. Ragazzoni Ed.s, 2004


SPADA Chip Layout

20µm

35µm50µm

75µm

60 element array with circular geometry

plug-in compatible with MACAO

4 sets of pixels


SPADA detector head


SPADA Opto-Mechanical System

WaveFront

microspheres held by ceramic holder

SPADA sensor

Peltier cooling stage

microlenses array

HeptagonMACAO lenslet array

No fibre coupling: higher reliability, lower losses, ruggedness, compatibility


SPADA system for AT

MACAO equipment

(by ESO)

power

supplyMains (230V ac)

re mote

Computer

Detection Board

Top metalic plate

SPADA

RS

23

2

2

SC

SI

cab

les

(68

wir

es

eac

h)

Po

we

r su

pp

ly c

ab

le(7

wir

es)

Gat

e

Inte

rlo

ck

US

B

Seamless compatible with ESO MACAO sensor

(electronics & optomechanical interfaces designed for CALDO and originally for AT-MACAO)


Detection board

iAQC diff.out

iAQC diff.out

iAQC diff.out

iAQC diff.out

SC

SI

connecto

r6

8 p

inS

CS

I con

necto

r68 p

in

1

2

3

60

PeltierController

Pelt

ier

e T

erm

oR

µC

gate

interlock

RS232

USB

Gate In

SMCdiff.

Detection electronic board

gate

Vhigh

T.meas

T.set

Common anode

supply

fro

m t

he

SP

AD

A s

enso

r

to D

ata-

Pro

ces

ing

Ele

ctro

nic

s o

r to

MA

CA

O e

qui

pm

ent

Interlock

SMCdiff.

gate

inter lock

hold-off

duration

overvoltage

setting

to remote computer

of MACAO equipment

to Data-Processing boarddriver

Pow

er s

up

pli

es +5V

+12V

-24V

gnd

+12VPeltier

gndPeltier

Linear

regulator

-10V...-24V

Operates the 60 SPADs

through 60 iAQCs

Outputs 60 channels

differential lines directly to MACAO

Controls SPADA settings

temperature, overvoltage, hold-off, gating

Controls gates & interlocks

Sends data directly to MACAO

Sends data to Processing Board for stand-alone operation


AO Curvature Sensor and LGS layer

sensing mode

Enable

SC

SI

connecto

r68 p

inS

CS

I connecto

r68

pin

fro

m D

ata

-Pro

cesi

ng

Ele

ctro

nic

s

Data BusData shift

clock

Audioampl.

Membrane

Load 4Ω 4W

Output

GNDSin. OutLEMO

Sine

Generator16bit sine table

8 bit sine peak

FireWire

FireWire for settings downloading

for dat a uploading

RS232 to Detection boarddriver

Pow

er

sup

plies+5V

+12V-24Vgnd

+12VPeltier

gndPeltier

to D

etec

tion

bo

ard

Power-supply forDetection board

Mains 230V acPower-supply for

Data-Processing board

diff.Gate InSMC

diff.Gate Out

SMC

diff.InterlockIn SMC

from AO equipment

to Detection board

diff.InterlockOut SMC

from AO equipment

to Detection board

Timingand

control logic

diff.LaserSynch

In SMC

diff.LaserSynchOut SMC

from AO equipment

to AO equipment

1st

A counter

Ck

Enable

ShiftRegister

1st

B counter

Ck

Enable

Processing:A-B

A+B

CurvatureWaveFrontSensor

Local Mode Operation

On Board Curvature

Signal computation

possible

3 km vertical resolution

Sine wave generation

for membrane mirror

In/Out

Synchronizations with

pulsed laser

Fast FireWire uploading


Fast Transient Phenomena

1st Counter LatchCk

Enable

Timing and control logic

Mains 230V ac

SC

SI

con

ne

cto

r6

8 p

inS

CS

I c

on

nect

or

68

pin

Ck

Shift

Register

diff.Gate In

SMC

diff.Gate Out

SMC

diff.Interlock

In SMC

from

Dat

a-P

roce

sing

Ele

ctro

nic

s

FireWire

60th Counter LatchCk

Enable Ck

Shift

Register

Enable Data Bus

Data shift

clock

FireWire for settings downloading

for data uploading

from AO equipment

to Detection board

diff.Interlock

Out SMCfrom AO equipment

to Detection boardRS232 to Detection boarddriver

Po

we

r su

pp

lie

s

+5V

+12V

-24V

gnd

+12VPeltier

gndPeltier

to D

etec

tion

bo

ard

Power-supply for

Data-Processing board

Power-supply forDetection board

Time slots: 10µs-100ms

Measurement time:

Time Windows:

No blind-slots

Fast FireWire

uploading


Experiment done at

20 kframe/s

Pixels are illuminated by

1ms-period saw-tooth modulated light

Fast Transient Imaging

10µsec-100msec i.t.

Time tagging

Continuos streaming

Firewire link

12 bit data


Non-Invasive Testing of ULSI Circuits


Spontaneous Photon Emission in MOSFET

Photon Emission

High Electric Field

n+p+

p

DS

Gox

Bulk SourceGate

Drainhν

hot-carriers

Impact Ionization(Substrate current)


Light emission from CMOS inverters

4.4 4.5 4.6 4.7 4.8 4.9 5.00

1

2

3

4

5

ISN

PH

VIN

VOUT

Arb

itra

ry U

nit

s

Time [ns]

VIN VOUT

VDD

p-FET

n-FET

ph

IS


Non-invasive Testing of Integrated Circuits

SPAD

Inputobjective

Imagingdetector

Focusingobjective

hνννν

6 8 10 12 14 16 18 20 220

20

40

60

80

100

120

140

160

180

2 ns

Ph

oto

n C

ou

nts

(a

.u.)

Time [ns]

Clock IN

Data Out

1.9 ns

(Timing detector)

locates emitting MOSFETs

marks arrival timeof single photons

Photons emitted by MOSFET


-0.1 0.0 0.1 0.2 0.3 0.40

20

40

60

80

100

120

FWHM = 50ps

Cou

nts

(a

.u.)

Time [ns]

Single-Inverter transition

FWHM=250ps

J.C. Tsang et al., APL 70, 889 (1997)

Measured with SPAD Measured with PMT

F. Stellari et al, IEEE TED 48, 2830 (2001)


Test example on a real circuit

p-FET

n-FET

2.0 2.5 3.0 3.5 4.0 4.50

200

400

600

800

1000

1200

1400

pFET

28.3ps

Ph

oto

n c

ou

nts

(a.u

.)

Time [ns]

nFET

Laser ScanningLaser ScanningMicroscope (LSM)Microscope (LSM)

Transistor localization on the schematic … … and on the layout (LSM image)

Spontaneous luminescence pulses

synchronous with

MOSFET switching


Example of defect localization by

measuring dynamic waveforms

Faulty Inverter

5 10 15 200

10

20

30

40

50

Ph

oto

n c

ou

nts

(a.u

.)Time [ns]

5 10 15 200

10

20

30

40

50

Ph

oto

n c

ou

nts

(a.u

.)

Time [ns]

Good Inverter

Faulty Inverter


Spatial Resolution

5x50x

microscope objectives

single inverter many inverters

“teleobjective” “wide angle”


ECL comparator

Electronics1 2 46 47

ring oscillator

1kΩ

counter

on-chp device

÷32

Fast Ring Oscillator

50x

0 50 100 150 200 250 300 350 400 4500

500

1000

1500

2000

2500

cycle-time

321

Cou

nts

(a

.u.)

Time [ns]


Quantum Cryptography (QKD)


Quantum Key Distribution (QKD) principle


QKD system in free space transmission


QKD system in fibre transmission


Conclusions and Prospect - 1

SPADs in planar epitaxial Silicon technology offer high performance at low-cost;

further improvements are under way (wider area SPAD; array detectors...)

Monolithic iAQCs open the way to miniaturized modules (down to the chip scale)

Remarkable results obtained in diversified applications: DNA and Protein Analysis;

Single-Molecule Spectroscopy; Wavefront Sensors in Adaptive Optics; etc.

The technology for infrared-sensitive SPAD devices is in evolution:

significant progress may be expected in the near future


Conclusions and Prospect - 2

Results of decades of research made widely available by

a new spinoff company


PoliMi Staff 2005

COVA, S. Full Professor

GHIONI, M. Full Professor

ZAPPA, F. Associate Professor

RECH, I. Assistant Professor

LABANCA, I. Research Associate

GALLIVANONI, A. Research Associate

TOSI, A. Post-Doc

TISA, S. Ph.D. Student

RESTELLI, A. Ph.D. Student

GULINATTI, A. Ph.D. Student


Acknowledgments

IMM-CNR, Bologna (I) - P. Maccagnani, A. Poggi, S. Solmi, M. Severi

ICRM-CNR, Milano (I) - M. Chiari, M. Cretich

ESO (D) – D. Bonaccini Calia

MICROGATE, Bolzano (I) - R. Biasi, A. Giudice

HARVARD University (MA, USA) - X. Sunney Xie, H. Yang, G. Luo

IBM Central Research (NY, USA) - J.C. Tsang, M. Mc Manus

Heriot Watt Uni (UK) - G. Buller, S. Pellegrini, K. Gordon, V. Fernandez


MPDCompany Overview


Vision and Markets

Build a business that is the leader in Photon Counting Technologies by:

Providing quality and reliable modules at a reasonable price.

Attention to customer requirements

Further developing the technology: ie: APD

arrays, Higher efficiency in the red, 1550nm

detection, APD+ASIC processing and tube technology.

Markets Served: Universities, R&D facilities, Small OEM’s

Astronomy – Adaptive Optics

Biomedical – DNA and Drug discovery, Confocal Microscopes, Particle Sizing.

Quantum Cryptography – InGaAs APD

Custom applications


MPD Company Overview

21 employees (with parent company Microgate Srl)

1350 square meters of area

ISO certification in progress

Close collaboration with state-of-the-art Silicon foundry

Electronic workshop Class 10000 clean room

for integration

Inventory and Production

management


Silicon Foundry Overview

Permanent Staff: 49

Short Term Staff: 5

Associated Researchers: 30

Class 100 clean area (250 square meters)

Pilot line for fabrication of devices and IC’s in 4” silicon wafer

• Technological processes with high flexibility

• Consolidated know-how in Si device technology

• Si-micromachining and Si anodization


Management and Technical Team

Roberto Biasi, CEO Micro-Photon-DevicePhD in Aerospace Engineering at Politecnico di Milano in 1995. As founder and active partner of Microgate S.r.l., he has been involved as reaserch engineer and project manager in several leading projects in adaptive optics and telescope design, like MMT and LBT adaptive secondaries, ALMA antenna control system and STRAP, a tip-tilt adaptive optics control system based on Single Photon Avalanche Diodes. With this project he entered the field of photon counting and established a collaboration with the research team leaded by Prof.Cova at Politecnico di Milano. This collaboration brought to the foundation of Micro Photon Devices, a spin-off company specialized in production of single photon counting modules.

Sergio Cova, CTO Micro-Photon-Device, FounderBorn in 1938, doctor degree in Nuclear Engineering in 1962 at Politecnico di Milano, Italy, where he is Full Professor of Electronics since 1976. Fellow of the IEEE. Author of over a hundred and seventy papers in international refereed journals and conferences and of four international patents (US and Europe). He has given innovative contributions to research and development of photon detectors and associated electronics, nuclear electronics, microelectronic devices and circuits, electronic and optoelectronic measurement instrumentation and systems. He pioneered the development of Single-Photon Avalanche Diodes SPAD; he invented the Active-Quenching Circuit AQC, which opened the way to their application, and developed it up to monolithic integrated form; he devised and experimented new SPAD devices in silicon and in germanium and III-V semiconductors, thus pioneering the extension of photon counting techniques to the infrared spectral range. He collaborated to interdisciplinary research in physics, astronomy, cytology and DNA and protein analysis, developing dedicated electronic and optoelectronic devices and instrumentation.

Massimo Ghioni, Technical Advisor, FounderBorn in 1962, doctor degree in Nuclear Engineering in 1987 at Politecnico di Milano, Italy, where he is Full Professor of Electronics since 2000. He designed and experimented in his thesis work the first silicon Single-Photon Avalanche Diodes SPAD devices with epitaxial structure, demonstrating their picosecond photon timing performance. Visiting scientist in 1992 at the IBM T.J. Watson Research Center, Yorktown Heights, NY, USA, he developed a new CMOS compatible SOI photodetector for optical datacom applications. His current research interests are focused on the development of SPAD detectors and associated electronics for new microanalytical techniques in biomedical, genetic and diagnostic applications. He has worked in several leading research programs in international collaboration with universities, public bodies and high technology industries, such as Harvard University, USA; Heriot-Watt University, UK; ESO European Southern Observatory; Carl Zeiss, Jena, Germany; IBH, Glasgow, UK; Edinburgh Instruments, UK. He has published over eighty papers in international peer-reviewed journals and proceedings of international conferences and he is co-author of six US and European patents.

Franco Zappa, Technical Advisor, FounderBorn in 1965. Ph.D. in Electronics and Communications in 1993 at Politecnico di Milano, Italy, where he is Associate Professor of Electronics since 1998. His research interests are the design of single-photon avalanche photodiodes and related electronics for visible and near-infrared wavelength ranges, the design of photodetector arrays for imaging, and the non-invasive testing of VLSI circuits exploiting spontaneous hot-carrier luminescence emission. In 1994 he pioneered the first monolithic electronics for single-photon detection, designing the first integrated prototype ever reported in literature. He has published over sixty papers in international peer-reviewed journals and proceedings of international conferences and he is co-author of three US and European patents.


Product Portfolio

Single photon counting modules with ultra-fast timing resolution and high photon detection efficiency.

Active Quenching module which can be used with other SPAD’s, for instance:InGaAs, HgCdTe and Silicon devices

Custom modules and arrays can be developed using MPD’s proprietary silicon SPAD devices and iAQC circuits


MPD has a solid understanding of Photon MPD has a solid understanding of Photon

Counting. Sergio Counting. Sergio CovaCova and his team have and his team have

been working on Photon Counting for over been working on Photon Counting for over

25 years, and have developed leading IP in 25 years, and have developed leading IP in

active quenching and SPAD technology.active quenching and SPAD technology.

MPD has developed a strong relationship MPD has developed a strong relationship

with a statewith a state--ofof--art Silicon Foundry. art Silicon Foundry.

This will ensure a steady supply of SPADThis will ensure a steady supply of SPAD’’s, s,

and continuous improvements in SPAD and continuous improvements in SPAD

performance.performance.

MPD has the infrastructure to be a solid MPD has the infrastructure to be a solid

OEM supplier OEM supplier –– and work closely with itand work closely with it’’s s

customers to develop custom solutionscustomers to develop custom solutions

Summary of Capabilities


Thank-youQuestions?

See us atPhotonics West

Booth # 5115

Documents

Photon Counting Microdetectors and Applications ... Cova IEEE-LEOS Distinguished Lecturer Photon Counting Microdetectors and Applications: Retrospect and Prospect Politecnico di Milano