February 4, 2021

Wiesbaden

Photoresist comparison NEGATIVE processing

Phase-out AZ5214EEU version

2 04.02.2021 Phase-out AZ5214E EU version

1. Spin curve comparison

2. Process parameters

3. Exposure Latitude

4. Linearity

5. Focus Latitude

Phase-out AZ5214E

EU version

ContentPhotoresist comparison NEGATIVE processing

spin speed/RPM

film thickness /µm

AZ 5214E [EU] AZ 5214E [JP]

500 4.32* 4.06*

1000 3.12 2.93

2000 2.18 2.06

3000 1.77 1.67

4000 1.53 1.44

5000 1.37 1.29

6000 1.26 1.18

* no ideal coating at this speed

04.02.2021 Phase-out AZ5214E EU version

Phase-out AZ5214E

EU versionSpin Curve comparison

1.00

1.50

2.00

2.50

3.00

3.50

4.00

4.50

5.00

0 1000 2000 3000 4000 5000 6000 7000

film

th

ickn

ess /

µm

spin speed /RPM

Spin curvesAZ 5214E [EU] vs. AZ 5214E [JP]

AZ 5214E [EU]

AZ 5214E [JP]

3

4 04.02.2021 Phase-out AZ5214E EU version

Phase-out AZ5214E

EU version

Process Parameters

negative processing

AZ 5214E [EU] AZ 5214E [JP]

Substrate 6'' bare silicon (HMDS prime)

Photoresist name AZ 5214E [EU] AZ 5214E [JP]

Film thickness 1.422 µm

RPM 4610 4182

Softbake 105°C / 60 s

Exposure Tool Nikon i-line Stepper

Dose to print

74.64 mJ/cm² 35.96 mJ/cm²

@ L / S: 1.00 µm

Flood exposure 900 mJ/cm², Hg lamp

Post Exposure bake 120°C / 60 s

Developer name AZ 726 MIF

Developing condition 1 x 60 s

5 04.02.2021 Phase-out AZ5214E EU version

Phase-out AZ5214E

EU versionExposure Latitude

0.88

0.92

0.96

1.00

1.04

1.08

1.12

10 35 60 85 110

CD

Mask /

µm

Exposure / mJ/cm2

Exposure Latitude (neg. mode)AZ 5214E [EU] vs. AZ 5214E [JP]

AZ 5214E [EU]

AZ 5214E [JP]

6 04.02.2021 Phase-out AZ5214E EU version

AZ 5214E [EU]

AZ 5214E [JP]

Phase-out AZ5214E

EU version

Exposure Latitude

negative processing

Exposure: 53 mJ/cm²

CD: 1.00 µm

Exposure: 75 mJ/cm²

CD: 1.00 µm

Exposure: 83 mJ/cm²

CD: 1.00 µm

Exposure: 97 mJ/cm²

CD: 1.00 µm

Exposure: 102 mJ/cm²

CD: 1.00 µm

Exposure: 28 mJ/cm²

CD: 1.00 µm

Exposure: 36 mJ/cm²

CD: 1.00 µm

Exposure: 41 mJ/cm²

CD: 1.00 µm

Exposure: 47 mJ/cm²

CD: 1.00 µm

Exposure: 52 mJ/cm²

CD: 1.00 µm

7 04.02.2021 Phase-out AZ5214E EU version

Phase-out AZ5214E

EU versionLinearity

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00

CD

Resis

t /

µm

CD Mask / µm

Linearity (neg. mode)AZ 5214E [EU] vs. AZ 5214E [JP]

AZ 5214E [EU]

AZ 5214E [JP]

8 04.02.2021 Phase-out AZ5214E EU version

AZ 5214E [EU]

AZ 5214E [JP]

Phase-out AZ5214E

EU version

Linearity

negative processing

CD: 0.55 µm

Exposure: 75 mJ/cm²

CD: 0.60 µm

Exposure: 75 mJ/cm²

CD: 0.65 µm

Exposure: 75 mJ/cm²

CD: 0.70 µm

Exposure: 75 mJ/cm²

CD: 0.75 µm

Exposure: 75 mJ/cm²

CD: 0.55 µm

Exposure: 36 mJ/cm²

CD: 0.60 µm

Exposure: 36 mJ/cm²

CD: 0.65 µm

Exposure: 36 mJ/cm²

CD: 0.70 µm

Exposure: 36 mJ/cm²

CD: 0.75 µm

Exposure: 36 mJ/cm²

9 04.02.2021 Phase-out AZ5214E EU version

AZ 5214E [EU]

AZ 5214E [JP]

Phase-out AZ5214E

EU version

Linearity

negative processing

CD: 0.80 µm

Exposure: 75 mJ/cm²

CD: 0.90 µm

Exposure: 75 mJ/cm²

CD: 1.00 µm

Exposure: 75 mJ/cm²

CD: 1.10 µm

Exposure: 75 mJ/cm²

CD: 1.20 µm

Exposure: 75 mJ/cm²

CD: 0.80 µm

Exposure: 36 mJ/cm²

CD: 0.90 µm

Exposure: 36 mJ/cm²

CD: 1.00 µm

Exposure: 36 mJ/cm²

CD: 1.10 µm

Exposure: 36 mJ/cm²

CD: 1.20 µm

Exposure: 36 mJ/cm²

10 04.02.2021 Phase-out AZ5214E EU version

AZ 5214E [EU]

AZ 5214E [JP]

Phase-out AZ5214E

EU version

Linearity

negative processing

CD: 1.30 µm

Exposure: 75 mJ/cm²

CD: 1.40 µm

Exposure: 75 mJ/cm²

CD: 1.50 µm

Exposure: 75 mJ/cm²

CD: 2.00 µm

Exposure: 75 mJ/cm²

CD: 3.00 µm

Exposure: 75 mJ/cm²

CD: 1.30 µm

Exposure: 36 mJ/cm²

CD: 1.40 µm

Exposure: 36 mJ/cm²

CD: 1.50 µm

Exposure: 36 mJ/cm²

CD: 2.00 µm

Exposure: 36 mJ/cm²

CD: 3.00 µm

Exposure: 36 mJ/cm²

11 04.02.2021 Phase-out AZ5214E EU version

Phase-out AZ5214E

EU versionFocus Latitude

0.84

0.88

0.92

0.96

1.00

1.04

1.08

1.12

1.16

-1.70 -1.50 -1.30 -1.10 -0.90 -0.70 -0.50 -0.30 -0.10 0.10 0.30 0.50 0.70

CD

Mask /

µm

Focus / µm

Focus Latitude (neg. mode)AZ 5214E [EU] vs. AZ 5214E [JP]

AZ 5214E [EU]

AZ 5214E [JP]

12 04.02.2021 Phase-out AZ5214E EU version

AZ 5214E [EU]

AZ 5214E [JP]

Phase-out AZ5214E

EU version

Focus Latitude

negative processing

Focus: -1.5 µm

Exposure: 75 mJ/cm²

Focus: -1.1 µm

Exposure: 75 mJ/cm²

Focus: -0.7 µm

Exposure: 75 mJ/cm²

Focus: -0.1 µm

Exposure: 75 mJ/cm²

Focus: 0.3 µm

Exposure: 75 mJ/cm²

Focus: -1.5 µm

Exposure: 36 mJ/cm²

Focus: -1.1 µm

Exposure: 36 mJ/cm²

Focus: -0.7 µm

Exposure: 36 mJ/cm²

Focus: -0.1 µm

Exposure: 36 mJ/cm²

Focus: 0.3 µm

Exposure: 36 mJ/cm²

13 04.02.2021 Phase-out AZ5214E EU version

Disclaimer

Products are warranted to meet the specifications set forth on their label/packaging and/or certificate of

analysis at the time of shipment or for the expressly stated duration. All sales are subject to Merck’s

complete Terms and Conditions of Sale. Prices are subject to change without notice. We reserves the right

to discontinue products without prior notice.

We provide information and advice on application technologies and relevant regulations based upon our

current knowledge and opinion. WE MAKE NO REPRESENTATION OR WARRANTY OF ANY KIND, EXPRESS

OR IMPLIED, INCLUDING MERCHANTABILITY OR FITNESS FOR A PARTICULAR USE, WITH RESPECT TO

SUCH INFORMATION OR ITS APPLICATION. Customers must independently determine the suitability of

our products for the customer’s intended product, use or process. Customer is responsible for observing

all laws and regulations relevant to such products, uses or processes. The foregoing information and

suggestions are also provided without warranty of non-infringement as to intellectual property rights of

third parties and shall not be construed as any inducement to infringe the rights of third parties. Customer

shall be responsible for obtaining any applicable third party intellectual property licenses. Any reference

from our literature requires prior written consent and in any reference the source shall be stated.