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23 January 2009
Partnering along the chain of innovation :
III-V lab example
Dominique Pons
Symposium
Global Open Innovation Networks
23 January 2009
23 January 2009
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What is III-V Lab?
► a jointly owned Alcatel-Lucent / Thales R&D Lab
French GIE (Groupement d’Intérêt Economique) organization
GIE contract signed in July 2004
► with 100 (50+50) R&D experts
Dedicated to material growth, device design and manufacturing
► performing industrial R&T on III-V semiconductor technology
Optoelectronic and microelectronic materials, devices and circuits
From applied research to technology transfer for industrialisation …
… or to small scale production
► for complementary Alcatel-Lucent / Thales applications …
High bit rate Optical Fibre and Wireless Telecommunications
Microwave and Photonic systems for Defence, Security and Space
► … and open to external cooperation
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Why a co-operation ?
► III-V semiconductor technology is critical :
Breakthroughs and competitive advantages at system level expected
from an early access to advanced III-V devices for both defence and
communication systems
Many critical devices suffer export restrictions from US or Japan
► III-V semiconductor R&D is very expensive :
Expensive equipment and clean room facilities
Many different skills needed in material science, clean room device
processing, optoelectronic and microelectronic device physics,
simulation, characterization, circuit design
► Benefits of a cooperation :
Share of the costs and critical size
A common core of ‘dual’ technologies for the development of
dedicated devices for non competing applications
Early availability of advanced devices for the developments of systems
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What do we share ?
► We share the technology :
Critical skills on material science, device processing, circuit design, …
Expensive equipment and infrastructures : epitaxy reactors, clean room
facilities, assembly technology, device characterization, …
Common technology blocks
However, usually the different applications (Telecom/ Defence) need
different devices (dual technology but dedicated devices)
► We share the costs :
Cost for each member = total cost / 2, after deduction of the external
funding (R&D contracts and sale of devices)
► We share the IP :
Foreground IP shared between the 2 members
Free access to the needed background IP
Free exploitation rights (non exclusive and non transferable) by each
member
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Shared skills and technologies
Page 523 January 2009
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Clean room
device processing
Device physics
circuit design
Material science
What is our mission ?
► Develop the technology of opto- and micro-electronic III-V
devices for :
40Gb/s, 100Gb/s and above optical fibre communications
Microwave front-ends of radar, electronic warfare and wireless
communication systems
Near- to far- IR night vision or enhanced vision cameras and systems
Spectroscopic gaz detection systems and other advanced photonic
systems
► Transfer the technology for industrialisation when required …
► … Or offer the capacity for small volume production :
Only small quantities of devices are necessary during several years for
system development and first deployments
This capacity allows to delay the expensive technology transfers till they
are really necessary (high volume market demand)
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InP HBT MMIC technology
► Shared InP HBT MMIC
technology
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100 Gb/s InP HBT multiplexer
High dynamic range / ultra-fast S/H circuits
Mux/Demux circuits for
o.f. communications
ADC circuits for digital radars
/ EW systems
PIN GaInAs photodiodes
► Shared GaInAs IR PIN
photodiode technology
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PIN photodiodes for
o.f. communications
Focal plane arrays for IR cameras /
enhanced vision
European cooperation network
► Network for GaN power microwave technology development
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Valorization
► Technology transfers
InP HBT technology : industrialisation in Ommic underway
GaN HEMT technology : industrialisation in UMS underway
► Sales of advanced devices for GIE members’ needs
40 Gb/s devices Teleoptix (It) Alcatel Lucent
HBT / ph.-diodes 40Gb/s modules 40Gb/s networks
IR detectors Sofradir (Fr) Thales
QWIP arrays detectors blocks Night vision cameras
► Sales of advanced devices for (partner) start-ups
IR laser diodes for gaz detection / monitoring systems
GaInAs detector arrays for enhanced vision cameras, thermography,…
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Innovation
► Innovation : when a new technology (invention) is meeting a
market demand
► The maturity level of a technology can be evaluated using the
ranking of its ‘TRL’ (technology readiness level)
► The TRL alone does not give any insight of the impact of this
technology on the market and is not a measure of its
innovation level
► We try to evaluate our technologies as potential innovations
using the ‘Monnier’s Innovation Matrix’ methodology
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Monnier’s Innovation Matrix (1)
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Copyright © 2004 Bernard Monnier
MONNIER's INNOVATION MATRIX ©
0,0
3,3
6,7
10,0
0,0 3,3 6,7 10,0
PROJET A
FORT POTENTIEL
D'INNOVATION
PROJET
INNOVANT
MIM Level 4
MIM Level 5
MIM Level 6
MIM Level 1
« Robust »
Innovation
Innovation
High potential for
d’innovation
Innovation
birth
Incertain …
DEMAND
SU
PP
LY
Copyright © 2004 2007 Bernard Monnier. All rights reserved
CopyrightDepot.com ref. 00035701 & 00042385 -
MIM Level 7
Technical
product or
service
to be pushed
on the market
MIM Level 2
MIM Level 3
Offer
to be developped
for this idea
INNOVATION
Monnier’s Innovation Matrix (2)
► MIM ranking by analysing the
answers to a questionnaire
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Demand level
(X-axis)
4 parameters
16 criteria
Flexibility
Business
Model
Market
Competitors
Technical
solution
Technical
environment
Protection
Sustainable
Development
Supply level
(Y-axis)
4 parameters
15 criteria
Monnier’s Innovation Matrix (3)
► Evaluation of GaInAs IR image sensor technology
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