P01 Yoshizaki MOS-AK

7/30/2019 P01 Yoshizaki MOS-AK

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RF Modeling of Sub-100 nm

CMOS

S.Yoshizaki1, M.Nakagawa1, W.Y.Chong1, Y.Nara2,

M.Yasuhira2*

, F.Ohtsuka2

, T.Arikado2**

, K.Nakamura2

,K.Kakushima1, K.Tsutsui1 H.Aoki1, H.Iwai1

1 Tokyo Institute of Technology2 Semiconductor Leading Edge Technologies, Inc. (Selete), Japan* Current affiliation : Matsushita Electric Industrial Co., Ltd., Japan** Current affiliation : Tokyo Electron Ltd., Japan


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0%

20%

40%

60%

80%

100%

2004 2005 2006 2007 2008 2009

Fig.1 4-th Generation mobile

Center Research Laboratory,Hitachi Ltd.

Spread of the cellular phone and thewireless LAN.

The age of Digital information appliances

RF technologies serve the rapidlygrowing wireless communication markets.

Background ~RF Technology~

Accurate RF Modeling become

important to more than before.

But

ITRS2004update, 2004

Fig.2 Technology-development costreduction (due to TCAD)

In RF, some parasiticelements effect more severe.


3/15

MeritLow cost compared with

compound semiconductors

Consolidation with logic

circuits

Low operation voltage with

scaling

ScalingandCircuit

technologies improvefT and fmax

Feature in RFCMOS

Demerit

SN ratio degradation

Fig.3 Application Spectrum ITRS2004, 2004


4/15

Degradation of dielectric constant with dielectric relaxation.

RF characteristic deterioration with degrading mobility.

Increase interface state density Increase Low-frequencynoise and thus Phase noise.

The concern about High-k

MOSFET in RF


5/15

Motivation

There are little reports about RF

performance evaluation and modeling with

High-k MOSFETs.

Comparison HfSiON with SiON.

RF Modeling of Sub-100 nm High-k MOSFET


6/15

Device EOT = 1.5nm (HfSiON & SiON)

Gate lengthHfSiON (Lg= 64nm), SiON (Lg= 51nm)

The number of finger = 12 W=5m

Fig.4 HfSiON MOSFET structure

silicide

HfSiON SiN

Si

silicide

SiON SiN

Si

Fig.5 SiON MOSFET structureG G G G G

S S SD D

M1

STI

VIA1

63.9nm 61.7nm 62.3nm 65.5nm 65.3nm

S S

S S

G

D

S

D

Increase gate width with increasing number of

fingers, the gate resistance become small.

23

1

f

totshG

LN

WRR Nf

: The number of finger

Fig.6 Section of HfSiON MOSFET


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DC Measurement and Simulation

HfSiON

0.00E+00

1.00E-04

2.00E-04

3.00E-04

4.00E-04

5.00E-04

6.00E-04

0 0.5 1 1.5

Vd[V]

Id/

[

Fig.7 Measured and simulated Ids-Vds

HfSiON

Vgs=0, 0.6, 0.9, 1.2, 1.5V Measured

Simulated

0.00E+00

1.00E-04

2.00E-04

3.00E-04

4.00E-04

5.00E-04

6.00E-04

7.00E-04

0 0.5 1 1.5

Vd[V]

Id/

[A

Fig.8 Measured Ids-Vds SiON


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To de-embed parasitic elements including wires

and pads is important that could obtain the realdevice parameters.

RgLg

Cg

Rgp

Cgd Rgdp

Ld RdCd

Rdp

Rs

Ls

DUTDrain

SHORT

De-embedding

BSIM4

OPEN

Gate

DrainGate

Gate

Drain


9/15

Measured and Simulated fT, fmaxHfSiON

fT,HfSiON = 189.9[GHz]fmax,HfSiON = 59.9[GHz]

GS

mT

C

gf

2

)2)((2

max

GDGTSGds

t

CRfRRg

ff

Fig.9 H21 and GAmax vs. Frequency HfSiON

Fig.10 Equivalent circuit model

Rg

CGD

CGS

LD

RD

BSIM4

0

10

20

30

40

50

0.1 1 10 100 1000

Frequency[GHz]

2

1,

ax[d

Measured GAmax

Simulated GAmax

Measured H21

Simulated H21

Vg=1.2V, Vd=1.5V


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Measured S-parameter and

Predicted fT, fmax SiON

0

10

20

30

40

50

60

0.1 1 10 100 1000

Frequency[GHz]

21,

ax[d

fT,SiON = 236[GHz]

fmax,SiON = 74[GHz]

Fig.11 H21 and GAmax vs. Frequency SiON

Measured GAmax

Extrapolated GAmax

Measured H21

Extrapolated H21

Vg=1.2V, Vd=1.5V


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RF Characterization~ fT & gm Comparison HfSiON with SiON~

gm peak

0

50

100

150

200

250

0.01 0.1 1 10 100

Id[A]

f

[

z

0

10

20

30

40

50

60

70

80

90

100

g

[

S

fTSiON

fTHfSiON

gmSiON

gmHfSiON

Cross SiON andHfSiON characteristics

Fig.12 fT and gm vs. Id


12/15

Position of this device

0

50

100

150

200

250

300

0.01 0.1 1

[m ]

ft

[GH

z

nmos

pmos

SiON

HfSiON

0

50

100

150

200

250

300

0.01 0.1 1

[m ]

fmax[G

Hz]

nmos

pmos

Gate Length [um] Gate Length [um]

Fig.13 fT and fmaxIEDM, VLSI 1995 2004


13/15

We measured and simulated High-k MOSFET RF

characteristics.

Measured from 500MHz to 40GHz, there is no dielectricrelaxation.

Simulated fT and fmax in HfSiON, we obtained good fT

(189.9GHz) relatively.

SiON is expected much more high performance thanHfSiON. I guess this is because of mobility degradation.

Summary

This work was partially supported by Special Coordination

Funds for Promoting Science and Technology by Ministry of

Education, Culture, Sports, Science and Technology, Japan.

Acknowledgement


14/15

nmos

1.00E-19

1.00E-18

1.00E-171.00E-16

1.00E-15

1.00E-14

0.01 0.1 1 10 100Frequency[kHz]

Sid[A^2

/Hz]

SiON

HfSiON

Id=1mA / Vd=0.1V

Appendix A

~Flicker noise~

Fig.14 Flicker noise


15/158 inch wafer 40 GHz

Appendix B

~RF CMOS Evaluation Equipment~

Documents

P01 Yoshizaki MOS-AK