5
Si2301DS Vishay Siliconix Document Number: 70627 S-31990—Rev. E, 13-Oct-03 www.vishay.com 1 P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (W) I D (A) 20 0.130 @ V GS = - 4.5 V -2.3 -20 0.190 @ V GS = - 2.5 V -1.9 G TO-236 (SOT-23) S D Top View 2 3 1 Si2301DS (A1)* *Marking Code Ordering Information: Si2301DS-T1 ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS "8 V Continuous Drain Current (T J = 150_C) b T A = 25_C I D -2.3 Continuous Drain Current (T J = 150_C) b T A = 70_C I D -1.5 A Pulsed Drain Current a I DM -10 A Continuous Source Current (Diode Conduction) b I S -1.6 Power Dissipation b T A = 25_C P D 1.25 W Power Dissipation b T A = 70_C P D 0.8 W Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Ambient b R 100 _C/W Maximum Junction-to-Ambient c R thJA 166 _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

P-Channel 1.25-W, 2.5-V MOSFET - Vishay - manufacturer … ·  · 2009-09-25Document Number: 91000 Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications

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Page 1: P-Channel 1.25-W, 2.5-V MOSFET - Vishay - manufacturer … ·  · 2009-09-25Document Number: 91000 Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications

Si2301DSVishay Siliconix

Document Number: 70627S-31990—Rev. E, 13-Oct-03

www.vishay.com1

P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY

VDS (V) rDS(on) (�) ID (A)

200.130 @ VGS = -4.5 V -2.3

-200.190 @ VGS = -2.5 V -1.9

G

TO-236(SOT-23)

S

D

Top View

2

3

1

Si2301DS (A1)*

*Marking Code

Ordering Information: Si2301DS-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25�C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage VDS -20V

Gate-Source Voltage VGS �8V

Continuous Drain Current (TJ = 150�C)bTA= 25�C

ID-2.3

Continuous Drain Current (TJ = 150�C)bTA= 70�C

ID-1.5

APulsed Drain Currenta IDM -10

A

Continuous Source Current (Diode Conduction)b IS -1.6

Power DissipationbTA= 25�C

PD

1.25WPower Dissipationb

TA= 70�CPD

0.8W

Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 �C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Maximum Junction-to-Ambientb

R100

�C/WMaximum Junction-to-Ambientc

RthJA166

�C/W

Notesa. Pulse width limited by maximum junction temperature.b. Surface Mounted on FR4 Board, t � 5 sec.c. Surface Mounted on FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Page 2: P-Channel 1.25-W, 2.5-V MOSFET - Vishay - manufacturer … ·  · 2009-09-25Document Number: 91000 Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications

Si2301DSVishay Siliconix

www.vishay.com2

Document Number: 70627S-31990—Rev. E, 13-Oct-03

SPECIFICATIONS (TJ = 25�C UNLESS OTHERWISE NOTED)

Limits

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 �A -20V

Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -250 �A -0.45V

Gate-Body Leakage IGSS VDS = 0 V, VGS = �8 V �100 nA

Zero Gate Voltage Drain Current IDSS

VDS = -20 V, VGS = 0 V -1�AZero Gate Voltage Drain Current IDSS

VDS = -20 V, VGS = 0 V, TJ = 55�C -10�A

On State Drain Currenta ID( )

VDS � -5 V, VGS = -4.5 V -6AOn-State Drain Currenta ID(on)

VDS � -5 V, VGS = -2.5 V -3A

Drain Source On Resistancea rDS( )

VGS = -4.5 V, ID = -2.8 A 0.105 0.130�Drain-Source On-Resistancea rDS(on)

VGS = -2.5 V, ID = -2.0 A 0.145 0.190�

Forward Transconductancea gfs VDS = -5 V, ID = -2.8 A 6.5 S

Diode Forward Voltage VSD IS = -1.6 A, VGS = 0 V -0.80 -1.2 V

Dynamicb

Total Gate Charge Qg 5.8 10

Gate-Source Charge QgsVDS = -6 V, VGS = -4.5 V

ID � -2.8 A0.85 nC

Gate-Drain Charge Qgd

ID � -2.8 A1.70

Input Capacitance Ciss 415

Output Capacitance Coss VDS = -6 V, VGS = 0, f = 1 MHz 223 pF

Reverse Transfer Capacitance Crss 87

Switchingc

Turn On Timetd(on) 13.0 25

Turn-On Timetr VDD = -6 V, RL = 6 �

ID � -1 0 A VGEN = -4 5 V36.0 60

ns

Turn-Off Timetd(off)

ID � -1.0 A, VGEN = -4.5 VRG = 6 � 42 70

ns

Turn-Off Timetf 34 60

Notesa. Pulse test: PW �300 �s duty cycle �2%.b. For DESIGN AID ONLY, not subject to production testing.c. Switching time is essentially independent of operating temperature.

Page 3: P-Channel 1.25-W, 2.5-V MOSFET - Vishay - manufacturer … ·  · 2009-09-25Document Number: 91000 Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications

Si2301DSVishay Siliconix

Document Number: 70627S-31990—Rev. E, 13-Oct-03

www.vishay.com3

TYPICAL CHARACTERISTICS (25�C UNLESS NOTED)

On-Resistance vs. Drain Current

Output Characteristics Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I D

VGS - Gate-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I D

0

2

4

6

8

10

0 1 2 3 4 50

2

4

6

8

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TC = -55�C

125�C

0, 0.5, 1 V

2.5 V

VGS = 5, 4.5, 4, 3.5, 3 V

1.5 V

2 V

0

200

400

600

800

1000

0 3 6 9 12

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 0 50 100 1500

1

2

3

4

5

0 2 4 6 8

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0 2 4 6 8 10

Gate Charge

- G

ate-

to-S

ourc

e V

olta

ge (

V)

Qg - Total Gate Charge (nC)

VDS - Drain-to-Source Voltage (V)

C

- C

apac

itanc

e (p

F)

VG

S

Crss

Coss

Ciss

VDS = 6 VID = 2.8 A

- O

n-R

esis

tanc

e (

r DS

(on)

�)

ID - Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

VGS = 4.5 VID = 2.8 A

TJ - Junction Temperature (�C)

(Nor

mal

ized

)-

On-

Res

ista

nce

(r D

S(o

n)�

)

VGS = 2.5 V

VGS = 4.5 V

25�C

Page 4: P-Channel 1.25-W, 2.5-V MOSFET - Vishay - manufacturer … ·  · 2009-09-25Document Number: 91000 Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications

Si2301DSVishay Siliconix

www.vishay.com4

Document Number: 70627S-31990—Rev. E, 13-Oct-03

TYPICAL CHARACTERISTICS (25�C UNLESS NOTED)

0.01 0.10 1.00 10.00

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Pow

er (

W)

- 0.2

-0.1

0.0

0.1

0.2

0.3

0.4

-50 0 50 100 150

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0 2 4 6 8

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage Single Pulse Power

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

2

1

0.1

0.0110-4 10-3 10-2 10-1 1

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

30

- O

n-R

esis

tanc

e (

r DS

(on)

�)

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

- S

ourc

e C

urre

nt (

A)

I S

TJ - Temperature (�C) Time (sec)

Var

ianc

e (V

)V

GS

(th)

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

ID = 2.8 A

ID = 250 �A

10

1

10

TC = 25�CSingle Pulse

14

12

8

4

0

TJ = 25�C

TJ = 150�C

2

6

10

Page 5: P-Channel 1.25-W, 2.5-V MOSFET - Vishay - manufacturer … ·  · 2009-09-25Document Number: 91000 Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications

Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1

Disclaimer

Legal Disclaimer NoticeVishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.