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Si2301DSVishay Siliconix
Document Number: 70627S-31990—Rev. E, 13-Oct-03
www.vishay.com1
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (�) ID (A)
200.130 @ VGS = -4.5 V -2.3
-200.190 @ VGS = -2.5 V -1.9
G
TO-236(SOT-23)
S
D
Top View
2
3
1
Si2301DS (A1)*
*Marking Code
Ordering Information: Si2301DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25�C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20V
Gate-Source Voltage VGS �8V
Continuous Drain Current (TJ = 150�C)bTA= 25�C
ID-2.3
Continuous Drain Current (TJ = 150�C)bTA= 70�C
ID-1.5
APulsed Drain Currenta IDM -10
A
Continuous Source Current (Diode Conduction)b IS -1.6
Power DissipationbTA= 25�C
PD
1.25WPower Dissipationb
TA= 70�CPD
0.8W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 �C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambientb
R100
�C/WMaximum Junction-to-Ambientc
RthJA166
�C/W
Notesa. Pulse width limited by maximum junction temperature.b. Surface Mounted on FR4 Board, t � 5 sec.c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si2301DSVishay Siliconix
www.vishay.com2
Document Number: 70627S-31990—Rev. E, 13-Oct-03
SPECIFICATIONS (TJ = 25�C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 �A -20V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -250 �A -0.45V
Gate-Body Leakage IGSS VDS = 0 V, VGS = �8 V �100 nA
Zero Gate Voltage Drain Current IDSS
VDS = -20 V, VGS = 0 V -1�AZero Gate Voltage Drain Current IDSS
VDS = -20 V, VGS = 0 V, TJ = 55�C -10�A
On State Drain Currenta ID( )
VDS � -5 V, VGS = -4.5 V -6AOn-State Drain Currenta ID(on)
VDS � -5 V, VGS = -2.5 V -3A
Drain Source On Resistancea rDS( )
VGS = -4.5 V, ID = -2.8 A 0.105 0.130�Drain-Source On-Resistancea rDS(on)
VGS = -2.5 V, ID = -2.0 A 0.145 0.190�
Forward Transconductancea gfs VDS = -5 V, ID = -2.8 A 6.5 S
Diode Forward Voltage VSD IS = -1.6 A, VGS = 0 V -0.80 -1.2 V
Dynamicb
Total Gate Charge Qg 5.8 10
Gate-Source Charge QgsVDS = -6 V, VGS = -4.5 V
ID � -2.8 A0.85 nC
Gate-Drain Charge Qgd
ID � -2.8 A1.70
Input Capacitance Ciss 415
Output Capacitance Coss VDS = -6 V, VGS = 0, f = 1 MHz 223 pF
Reverse Transfer Capacitance Crss 87
Switchingc
Turn On Timetd(on) 13.0 25
Turn-On Timetr VDD = -6 V, RL = 6 �
ID � -1 0 A VGEN = -4 5 V36.0 60
ns
Turn-Off Timetd(off)
ID � -1.0 A, VGEN = -4.5 VRG = 6 � 42 70
ns
Turn-Off Timetf 34 60
Notesa. Pulse test: PW �300 �s duty cycle �2%.b. For DESIGN AID ONLY, not subject to production testing.c. Switching time is essentially independent of operating temperature.
Si2301DSVishay Siliconix
Document Number: 70627S-31990—Rev. E, 13-Oct-03
www.vishay.com3
TYPICAL CHARACTERISTICS (25�C UNLESS NOTED)
On-Resistance vs. Drain Current
Output Characteristics Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
- D
rain
Cur
rent
(A
)I D
VGS - Gate-to-Source Voltage (V)
- D
rain
Cur
rent
(A
)I D
0
2
4
6
8
10
0 1 2 3 4 50
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TC = -55�C
125�C
0, 0.5, 1 V
2.5 V
VGS = 5, 4.5, 4, 3.5, 3 V
1.5 V
2 V
0
200
400
600
800
1000
0 3 6 9 12
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 1500
1
2
3
4
5
0 2 4 6 8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 2 4 6 8 10
Gate Charge
- G
ate-
to-S
ourc
e V
olta
ge (
V)
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
C
- C
apac
itanc
e (p
F)
VG
S
Crss
Coss
Ciss
VDS = 6 VID = 2.8 A
- O
n-R
esis
tanc
e (
r DS
(on)
�)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 4.5 VID = 2.8 A
TJ - Junction Temperature (�C)
(Nor
mal
ized
)-
On-
Res
ista
nce
(r D
S(o
n)�
)
VGS = 2.5 V
VGS = 4.5 V
25�C
Si2301DSVishay Siliconix
www.vishay.com4
Document Number: 70627S-31990—Rev. E, 13-Oct-03
TYPICAL CHARACTERISTICS (25�C UNLESS NOTED)
0.01 0.10 1.00 10.00
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Pow
er (
W)
- 0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50 0 50 100 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 2 4 6 8
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.0110-4 10-3 10-2 10-1 1
Nor
mal
ized
Effe
ctiv
e T
rans
ient
The
rmal
Impe
danc
e
30
- O
n-R
esis
tanc
e (
r DS
(on)
�)
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
- S
ourc
e C
urre
nt (
A)
I S
TJ - Temperature (�C) Time (sec)
Var
ianc
e (V
)V
GS
(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
ID = 2.8 A
ID = 250 �A
10
1
10
TC = 25�CSingle Pulse
14
12
8
4
0
TJ = 25�C
TJ = 150�C
2
6
10
Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1
Disclaimer
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All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
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