Fabrication of Ordered Semiconductor Quantum DotsSandip Tiwari, Cornell University, ECCS - 0335765

Ordered InGaN quantum dot array.

High density two-dimensional hole array. Diameter ~12 nm.

Ordered wide-bandgap InGaN/GaN quantum dot arrays were epitaxially grown. Ordered InGaN quantum dots possess many desirable properties not achievable from conventional strained-induced epitaxy. They are promising materials for applications in nanophotonics, nanoelectronics, and quantum information processing.

The fabrication sequence developed uses electron beam lithography, conformal double-spacer hole shrinking, anisotropic etching, and selective area epitaxy in metal-organic chemical vapor deposition. These quantum dots exhibit room temperature photoluminescence.

These ordered quantum dot structures should open up new avenues of research to generically control the identity, placement, and function of semiconductor artificial atoms in a nanoscale solid and then assemble them into real-world systems.

P. C. Ku, University of Michigan Work performed at the U-Michigan Lurie Nanofabrication

Facility