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8/10/2019 Optic Fiber Attenuation
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optic fber attenuation
Loss o optical power o signal when it is transmitted through optic fber is called as
attenuation. Material dispersion, scattering, absorption, bending, splice loss,
waveguide dispersion, intermodal dispersion etc. are the main attenuation
mechanisms. In material dispersion, loss is due to the dispersion o white light. This
can be avoided by using monochromatic light. Scattering o light signal may causeattenuation. Here ayleigh scattering is signifcant. !ctual reason or scattering is
local variations in the reractive inde" in core part. !bsorption o optical signal by
the core material and impurities present in core material distorts the signal leading
to attenuation. #oth micro level and macro level bending o fber leads to fber loss
or attenuation. $onnectors, couplers and splicers in the fber optic communication
system diminish the signal and this loss is reerred as splice loss. %aveguide
dispersion which occurs in single mode fbers is the loss o signal due to reraction
towards cladding. Intermodal dispersion which occurs in multimode fbers is the
distortion o signal due to the di&erent paths o signal.
!bsorption o signal is a serious loss mechanism in an optical fber. !bsorption
occurs in optical fbers due to the presence o imperections in the atomic structure
o the fber material, due to some basic inherent intrinsic material properties and
due to some e"trinsic material properties. Imperections may appear in atomic
structure due to o"ygen defciencies and missing o certain molecules. 'i&usion o
hydrogen molecules may also induce absorption. #ut the contribution rom
imperections is relatively small in fber optic absorption losses. Inherent intrinsic
absorption is caused by basic fber material properties. I a material is ree rom
impurities and imperections, then entire absorption is due to intrinsic absorption.
Silica fbers possess very low intrinsic material absorption. Here absorption is
caused by the vibration o silicon(o"ygen bonds. The interaction between these
bonds and the electromagnetic feld o the optical signal is responsible or intrinsic
absorption. )resence o impurities in the fber material leads to e"trinsic absorption.
This is caused by the electronic transition o metal impurity ions rom one energy
level to another. !nother reason or e"trinsic absorption is the presence o hydro"yl
ions in the fber.
Scattering losses in optical fber
!ttenuation is the main loss mechanism in an optical fber. !bsorption and
scattering o signals results in attenuation. There are two types o scattering losses.
They are linear scattering and nonlinear scattering. In linear scattering, attenuation
occurs when optical power is transerred rom one mode to another *eepingre+uency unaltered. There are two categories in linear scattering. They are
ayleigh scattering and Mie scattering. ayleigh scattering is the main loss
mechanism in the visible range. It is proportional to the ourth power o the
operating wavelength. ayleigh scattering loss can be minimied by choosing
longest possible operating wavelength. I the sie o the deect is greater than one(
tenth o the wavelength o light, the scattering mechanism is called Mie scattering.
-on linear scattering occurs when re+uency is changed during optical power
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transer. The two types o nonlinear scattering are stimulated #rillouin scattering
and stimulate aman scattering. Stimulated #rillouin scattering is a cause o
concern in long distance systems, in wavelength division multiple"ing %'M/
systems and remote pumping o an erbium doped fber amplifer 0'1!/ through a
separate optical fber. Stimulated aman scattering creates problems in wavelength
division multiple"ing %'M/ systems.
2ptical fber splicing
Important methods employed or the splicing o optical fber cables are usion splice
method, v(groove butt splice method, elastic tube splice method and loose tube
splice method. In usion splice method, thermal bonding techni+ue is used. The ris*
o change in chemical composition does e"ist in this method. 3(groove splice
techni+ue uses a v(shaped groove which brings two fbres into mechanical
alignment. Then both the ends are epo"ied. 0lastic tube splice method is used or
the splicing o multimode fbres. Loose tube splice method is similar to v(groove
method. Here corner o a rectangular tube is used or the alignment.
Mode coupling in optic fbers
Mode is the path or light rays through an optical fber. I an optic fber supports only
one mode, it is called as single mode fber. Multimode fber supports more than one
mode. The electric feld distribution o various modes yields similar distributions o
light intensity within the fber core. These patterns are called mode patterns which
gives an idea o di&erent modes propagating in the fber. )ropagation
characteristics o a fber are very sensitive to deviations o the fber a"is rom
straightness, variations in the core diameter, irregularities in the core(cladding
interace and reractive inde" variations. Individual modes do not normally
propagate throughout the length o the fber. This result in a mode conversion which
is *nown as mode coupling. $oupled mode e+uations obtained rom Ma"well4s
e+uations can be used or the analysis o mode coupling. Mode coupling a&ects the
transmission properties o fber which is a serious cause or concern when used or
long distance communication. Mode coupling leads to intramodal dispersion li*e
material dispersion and waveguide dispersion and also intermodal dispersion.
2ptical detectors used in fber optic communication system
!valanche photodiode, )I- photodiode and pn 5unction photodiode are the main
optical detectors employed in fber optic communication. These devices converts
light signal to electrical waveorms. )n 5unction photodiode consists o a p(type
layer deposited on an n(type substrate. Minority carriers are responsible or
photocurrent. In the reverse biased mode, larger portion o the depletion layer
occupies the n(layer around the 5unction. The reason or this is attributed to smaller
impurity concentration in the n(layer. )ositive(Intrinsic(-egative )I-/ photodiode
consists o an intrinsic or lightly doped n(layer between two heavily doped n and p
layers. Here depletion region is wide and this enhances capture area o the photons.
!valanche photodiodes are variations o )I- photodiodes. More responsivity in
avalanche photodiodes is due to avalanche multiplication e&ect.
)osted by !M!$H!-'! 6!M!TH at 7899 !M
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each through avalanche photodiode !)'/
!valanche photodiodes are re+uired in fber optic communication at the receiving
end. )hotodiode detects the light signal and converts it into electrical orm. There
e"ist many orms o avalanche photodiodes. each through avalanche photodiode!)'/ is a promising candidate in this category. $onsider a positive(intrinsic(
negative semiconductor photodiode operating in reverse biased mode. %hen the
applied reverse voltage e"ceeds threshold value, photoelectrons generated as a
result o its e"posure to light, gets accelerated through the 5unction, collides with
other atoms to produce secondary electron(hole pairs. $arrier concentration
increases e"ponentially with the electric feld intensity. This phenomenon is *nown
as impact ioniation or avalanche e&ect. The reach through avalanche photodiode
consists o a high resistivity p(type material deposited on an epita"ial layer with an
e"tremely high order o impurity concentration. $ommonly used doping atoms to
achieve this are #oron and )hosphorous. 2peration o !)' is always in ully
depleted mode.