Optic Fiber Attenuation

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    optic fber attenuation

    Loss o optical power o signal when it is transmitted through optic fber is called as

    attenuation. Material dispersion, scattering, absorption, bending, splice loss,

    waveguide dispersion, intermodal dispersion etc. are the main attenuation

    mechanisms. In material dispersion, loss is due to the dispersion o white light. This

    can be avoided by using monochromatic light. Scattering o light signal may causeattenuation. Here ayleigh scattering is signifcant. !ctual reason or scattering is

    local variations in the reractive inde" in core part. !bsorption o optical signal by

    the core material and impurities present in core material distorts the signal leading

    to attenuation. #oth micro level and macro level bending o fber leads to fber loss

    or attenuation. $onnectors, couplers and splicers in the fber optic communication

    system diminish the signal and this loss is reerred as splice loss. %aveguide

    dispersion which occurs in single mode fbers is the loss o signal due to reraction

    towards cladding. Intermodal dispersion which occurs in multimode fbers is the

    distortion o signal due to the di&erent paths o signal.

    !bsorption o signal is a serious loss mechanism in an optical fber. !bsorption

    occurs in optical fbers due to the presence o imperections in the atomic structure

    o the fber material, due to some basic inherent intrinsic material properties and

    due to some e"trinsic material properties. Imperections may appear in atomic

    structure due to o"ygen defciencies and missing o certain molecules. 'i&usion o

    hydrogen molecules may also induce absorption. #ut the contribution rom

    imperections is relatively small in fber optic absorption losses. Inherent intrinsic

    absorption is caused by basic fber material properties. I a material is ree rom

    impurities and imperections, then entire absorption is due to intrinsic absorption.

    Silica fbers possess very low intrinsic material absorption. Here absorption is

    caused by the vibration o silicon(o"ygen bonds. The interaction between these

    bonds and the electromagnetic feld o the optical signal is responsible or intrinsic

    absorption. )resence o impurities in the fber material leads to e"trinsic absorption.

    This is caused by the electronic transition o metal impurity ions rom one energy

    level to another. !nother reason or e"trinsic absorption is the presence o hydro"yl

    ions in the fber.

    Scattering losses in optical fber

    !ttenuation is the main loss mechanism in an optical fber. !bsorption and

    scattering o signals results in attenuation. There are two types o scattering losses.

    They are linear scattering and nonlinear scattering. In linear scattering, attenuation

    occurs when optical power is transerred rom one mode to another *eepingre+uency unaltered. There are two categories in linear scattering. They are

    ayleigh scattering and Mie scattering. ayleigh scattering is the main loss

    mechanism in the visible range. It is proportional to the ourth power o the

    operating wavelength. ayleigh scattering loss can be minimied by choosing

    longest possible operating wavelength. I the sie o the deect is greater than one(

    tenth o the wavelength o light, the scattering mechanism is called Mie scattering.

    -on linear scattering occurs when re+uency is changed during optical power

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    transer. The two types o nonlinear scattering are stimulated #rillouin scattering

    and stimulate aman scattering. Stimulated #rillouin scattering is a cause o

    concern in long distance systems, in wavelength division multiple"ing %'M/

    systems and remote pumping o an erbium doped fber amplifer 0'1!/ through a

    separate optical fber. Stimulated aman scattering creates problems in wavelength

    division multiple"ing %'M/ systems.

    2ptical fber splicing

    Important methods employed or the splicing o optical fber cables are usion splice

    method, v(groove butt splice method, elastic tube splice method and loose tube

    splice method. In usion splice method, thermal bonding techni+ue is used. The ris*

    o change in chemical composition does e"ist in this method. 3(groove splice

    techni+ue uses a v(shaped groove which brings two fbres into mechanical

    alignment. Then both the ends are epo"ied. 0lastic tube splice method is used or

    the splicing o multimode fbres. Loose tube splice method is similar to v(groove

    method. Here corner o a rectangular tube is used or the alignment.

    Mode coupling in optic fbers

    Mode is the path or light rays through an optical fber. I an optic fber supports only

    one mode, it is called as single mode fber. Multimode fber supports more than one

    mode. The electric feld distribution o various modes yields similar distributions o

    light intensity within the fber core. These patterns are called mode patterns which

    gives an idea o di&erent modes propagating in the fber. )ropagation

    characteristics o a fber are very sensitive to deviations o the fber a"is rom

    straightness, variations in the core diameter, irregularities in the core(cladding

    interace and reractive inde" variations. Individual modes do not normally

    propagate throughout the length o the fber. This result in a mode conversion which

    is *nown as mode coupling. $oupled mode e+uations obtained rom Ma"well4s

    e+uations can be used or the analysis o mode coupling. Mode coupling a&ects the

    transmission properties o fber which is a serious cause or concern when used or

    long distance communication. Mode coupling leads to intramodal dispersion li*e

    material dispersion and waveguide dispersion and also intermodal dispersion.

    2ptical detectors used in fber optic communication system

    !valanche photodiode, )I- photodiode and pn 5unction photodiode are the main

    optical detectors employed in fber optic communication. These devices converts

    light signal to electrical waveorms. )n 5unction photodiode consists o a p(type

    layer deposited on an n(type substrate. Minority carriers are responsible or

    photocurrent. In the reverse biased mode, larger portion o the depletion layer

    occupies the n(layer around the 5unction. The reason or this is attributed to smaller

    impurity concentration in the n(layer. )ositive(Intrinsic(-egative )I-/ photodiode

    consists o an intrinsic or lightly doped n(layer between two heavily doped n and p

    layers. Here depletion region is wide and this enhances capture area o the photons.

    !valanche photodiodes are variations o )I- photodiodes. More responsivity in

    avalanche photodiodes is due to avalanche multiplication e&ect.

    )osted by !M!$H!-'! 6!M!TH at 7899 !M

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    each through avalanche photodiode !)'/

    !valanche photodiodes are re+uired in fber optic communication at the receiving

    end. )hotodiode detects the light signal and converts it into electrical orm. There

    e"ist many orms o avalanche photodiodes. each through avalanche photodiode!)'/ is a promising candidate in this category. $onsider a positive(intrinsic(

    negative semiconductor photodiode operating in reverse biased mode. %hen the

    applied reverse voltage e"ceeds threshold value, photoelectrons generated as a

    result o its e"posure to light, gets accelerated through the 5unction, collides with

    other atoms to produce secondary electron(hole pairs. $arrier concentration

    increases e"ponentially with the electric feld intensity. This phenomenon is *nown

    as impact ioniation or avalanche e&ect. The reach through avalanche photodiode

    consists o a high resistivity p(type material deposited on an epita"ial layer with an

    e"tremely high order o impurity concentration. $ommonly used doping atoms to

    achieve this are #oron and )hosphorous. 2peration o !)' is always in ully

    depleted mode.