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The SRAM array is accessed like a standard SRAM. Read and write access can be done randomly or in one of two burst modes. In page rollover mode the device implements a 64byte circular buffer and in block rollover the whole memory can be written with one single write operation.
With STORE operations the SRAM content will be stored for the complete memory array to the parallel non-volatile memory in 8ms. Depending on the specific product, STORE can be initiated automatically on power down (POWERSTORE) or by command. POWERSTORE is self-controlled and can be powered by a small local energy reservoir. Since power down POWERSTORE is executed while system power is going down, it takes zero system time.
The unique “Secure Write” from Anvo-Systems Dresden offers online checksum generation to prevent corrupt array access. This removes the risk of writing correct data to a wrong address.
In today's high-tech world, huge economic values and even life can depend on the availability and correctness of data. But, like cars on our roads, computer systems may be affected by a data crash and data may be corrupted or lost. Good to know there is an airbag for your data in place. Anvo-Systems Dresden nvSRAMs are the airbag for your data.
NVSRAM FUNCTIONAL DESCRIPTION
The nvSRAM combines two memories on one chip: fast SRAM and energy-efficient SONOS FLASH. It is a high speed non-volatile random access memory that combines energy-efficient non-volatile Flash elements with standard SRAM memory cells.
On power up an automatic RECALL of the data in the non-volatile elements sets the state of the SRAM. RECALL is executed for all memory cells in parallel. The transfer of all data from the non-volatile part of the memory cell to the SRAM only takes 50μs. RECALL may also be initiated by command. The SRAM may then be read or written without altering the nonvolatile elements.
THE AIRBAG FOR YOUR DATA
NON-VOLATILE MEMORIES MADE BY ANVO-SYSTEMS DRESDEN
The conventional way to store non-volatile data, which changes with high frequency, is to work with a high speed volatile memory and save the data non-volatile in a Flash via a standard bus system. Due to limited speed on the bus this will take both time and energy, which are in the case of a power crash not available in many applications.
nvSRAM has for every high speed SRAM cell a shadow Flash cell as backup with a cell to cell parallel interface. The complete content of the SRAM can be stored in just 8ms.
THE CONVENTIONAL WAY OF DATA BACK-UP
THE NEW WAY OF DATA BACK-UP
nvSRAM product features non-volatile write at bus speed - no write delays unlimited Read/Write endurance - no wear leveling needed 100k STORE cycles - virtually no restriction differential memory cell - excellent reliability extreme energy efficient store - ideal for mobile applications page and block roll over option - simplifies applications up to 108MHz SPI bus speed - low pin count but still fast random and burst access - speeds up your work 100-year non-volatile data retention - your data is safe forever wide range 2.7V to 3.6V power supply - fit in many systems commercial and industrial temperature range 8-pin 150 mil SOIC, 5x6DFN8 packages for serial nvSRAM RoHS-Compliant
Anvo-Systems Dresden specific features unique “Secure WRITE” - prevents array access for incorrectly transferred data
unique “Secure READ” - ensures correct read data transfer
non-volatile logging of last successful written address - improves recovery
free 2 or 16-byte non-volatile register - can be used as user serial number
hibernate mode - stop wasting energy in standby
Interface
SRAM or DRAM
memory cell array
Interface
FLASH memory
cell array
Interface
The nvSRAM combines two memories on one chip: fast SRAM and energy-efficient SONOS-FLASH.
Keeping WRITE/READ and STORE separate, each memory can be optimized for its dedicated task.
The fast parallel SRAM is exactly compatible with the standard SRAM. The serial nvSRAM supports the SPI protocol, so that it is compatible with other non-volatile memories like E²PROM, FRAM and FLASH.
All nvSRAM external accesses address the SRAM array only. The nvSRAM automatically stores SRAM data to the FLASH array when power is lost and recalls data to SRAM when power recovers. STORE and RECALL are also available under instruction control. This makes the nvSRAM the fastest, most reliable non-volatile memory on the market.
The SONOS-FLASH is tightly integrated with the SRAM cell in a single memory cell so that all SRAM contents can be stored and recalled in parallel without any external buses or interfaces. This saves time and energy.
Anvo-Systems Dresden’s nvSRAM architecture enables reads and writes with the speed and unlimited endurance of fast SRAM and grants the non-volatile STORE of the data at anytime.
PRODUCTS
PRODUCT SELECTOR
De
nsi
ty
Org
anis
atio
n
Par
t N
um
be
r
Inte
rfac
e
Spe
ed
Store Type Low Power
Mode VCC Package
Soft
STO
RE
Po
we
rSTO
RE
Har
dw
are
STO
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Hib
ern
ate
De
ep
Po
we
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VC
C 3
.0 –
3.6
V
VC
C 2
.7 –
3.6
V
VC
C 2
.7 –
3.6
V &
I/
O 1
.8V
SOIC
8 1
50
mil
DFN
8 5
x 6
BG
A 2
4 6
x8
BG
A 4
8 6
x 8
64 Kb 8K x 8 ANV32A62 I²C 1 MHz • • • • •
64 Kb 8K x 8 ANV32E61 SPI 66 MHz • • • • • • •
256 Kb 32K x 8 ANV32C81 SPI 66 MHz • • • • • • •
512 Kb 64K x 8 ANV32C91 SPI 66 MHz • • • • • • •
1 Mb 128K x 8 ANV32AA1 SPI 66 MHz • • • • • •
1 Mb 128K x 8 ANV32AA3 QSPI 108 MHz • • • • • • •
256 Kb 32K x 8 ANV22A88 parallel 25 ns • • • • •
1 Mb 128K x 8 ANV22AA8 parallel 25 ns • • • • •
Store Type 1 = Instruction only 2 = PowerStore (ext. Cap)
Version A = initial
Package S = SOP D = DFN B = BGA24/48
Packing R = Tape and Reel T = Tube
Memory Type 2 = parallel nvSRAM 3 = serial nvSRAM
Density 6 = 64 kb 8 = 256 kb 9 = 512 kb A = 1 Mb Speed
66 = 66 MHz 108 = 108 MHz 25 = 25 ns
Interface 1 = SPI 2 = I2C 3 = Quad SPI 8 = 8bit parallel
Operation Temp. Range C = 0°C … 70°C K = - 40°C … 85°C E = - 40°C ... 105°C A = - 40°C … 125°C
Power Supply A = 3.0 V… 3.6 V W = 2.7 V… 3.6 V P = 2.7 V ... 3.6 V
& 1.8 V I/O
ANV 3 2 A 8 1 W S K 66 R
APPLICATIONS
SMART METERING / SMART GRID
nvSRAMs made by Anvo-Systems Dresden enable Smart Grids to store sensitive data, such as consumption data and pay scale tables, locally and reliably. The unlimited read/write endurance supports the 20+ years lifetime of components like Smart Meters. Secure Write is the right solution for field updates of code and data.
AUTOMOTIVE
nvSRAMs made by Anvo-Systems Dresden reliably store data over a wide temperature range for the whole lifetime of a car. Typical applications are data memories for engine management or to monitor the wear of components. They are well suited for motor vehicle event data recorders which permanently store sensor data used for crash analysis. The low power consumption makes nvSRAM ideal for energy autarkic applications on moving parts.
INDUSTRIAL
In case of a restart after an emergency or a blackout it is important to have the position data of moving parts such as a robotic arm or manipulator. nvSRAMs made by Anvo-Systems Dresden can permanently write data from the axis sensors of robots and store them automatically at power loss. On restart the control unit knows the last position of the moving parts and can smoothly move them back to the starting position.
Fast – reliable – energy efficient: This combination makes nvSRAMs made by Anvo-Systems Dresden the right choice for a wide range of applications.
APPLICATIONS
COMPUTING
nvSRAMs are well introduced as transaction logs in RAID-systems. Everywhere, where the need for extreme high non-volatile write-speed meets the need for unlimited endurance, nvSRAMs reign supreme. They backup the state of virtual switches on touch screens, operate as flexible program and data memory in microcomputers, catch data in transient recorders.
MEDICAL
The high reliability combined with energy efficient operation makes nvSRAM ideal for low power mobile applications. Since standard CMOS processes can be used to build nvSRAMs it is even possible to integrate complex logic like a microprocessor, ADC or RFID on an nvSRAM chip. The result is an energy autonomous non-volatile microcontroller which, for example, can be used to check the wear of implants inside the human body.
APPLICATION SUPPORT Even if Anvo-Systems Dresden nvSRAMs are easy to use they come with a rich set of unique features, which need to be discovered. Anvo-Systems Dresden provides application support, like checking board layout and components used, for custom nvSRAM applications.
ABOUT ANVO-SYSTEMS DRESDEN
A group of key players in the world-wide nvSRAM
business decided at the end of 2008 to set up their
own company in Dresden in order to take advantage
of the pool of talented engineers and the
outstanding semiconductor infrastructure in the Silicon Saxony region.
In 2009, Anvo-Systems Dresden was founded as a
privately held company (GmbH) with the vision to set
new performance standards to the nvSRAM world.
A strategic cooperation with XFAB Semiconductor
Foundries AG ensures access to advanced CMOS
technologies.
Anvo-Systems Dresden specializes in highly reliable,
monolithic non-volatile data storage system solutions in industrial and communication environments.
Based on our own technology development we build
standard non-volatile memory products and provide
intellectual properties (IP) to our customers.
ANVO-SYSTEMS DRESDEN GmbH
Zur Wetterwarte 50
Haus 337 / B
01109 Dresden
Germany
Thomas Fengel
Main Office: +49 351 795 890 - 257
Mobile: +49 170 70 40 369
E-Mail: [email protected]
Web: www.anvo-systems-dresden.com
USA SALES
Hawyang Semiconductor Corp. 8Fl., No213, Sec3, Beixin Road Shindian Dist. New Taipei City 231– Taiwan Phone: +886 2-8911-2699 ext:600 Email: [email protected] Web: www.hawyang-semi.com
L. D. Hockaday
Sales Director USA
74 Cherokee Farms Drive Newnan, Georgia (GA) 30263 Office: 470-414-7433 Email:[email protected]
SALES CONTACT
DISTRIBUTION ASIA
DISTRIBUTION EUROPE
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URL: www.endrich.com
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Email: [email protected] URL: www. vimos-technologies.com
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Email: [email protected]
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DISTRIBUTION USA
All Tech Electronics, Inc. 12 Skyline Drive, Hawthorne NY 10532 Phone: 914 592-7726 Fax: 914 206-3832 Email: [email protected]
REPRESENTATIVES EUROPE
