1 P.T.O.D—8806

Signature and Name of Invigilator

1. (Signature)

(Name)

2. (Signature)

(Name)

Roll No. (In words)

Test Booklet No.

Roll No.

(In figures as per admission card)

PAPER—III

ELECTRONIC SCIENCETime : 2½ hours] [Maximum Marks : 200

D—8 8 0 6

Number of Pages in this Booklet : 32 Number of Questions in this Booklet : 26

Instructions for the Candidates1. Write your roll number in the space provided on

the top of this page.

2. Answers to short answer/essay type questions areto be given in the space provided below each questionor after the questions in the Test Booklet itself.

No Additional Sheets are to be used.

3. At the commencement of examination, the questionbooklet will be given to you. In the first 5 minutes,you are requested to open the booklet andcompulsorily examine it as below :

(i) To have access to the Test Booklet, tear off thepaper seal on the edge of this cover page. Do notaccept a booklet without sticker-seal and do notaccept an open booklet.

(ii) Tally the number of pages and number ofquestions in the booklet with the informationprinted on the cover page. Faulty booklets dueto pages/questions missing or duplicate or notin serial order or any other discrepancy shouldbe got replaced immediately by a correct bookletfrom the invigilator within the period of 5minutes. Afterwards, neither the questionbooklet will be replaced nor any extra time willbe given.

4. Read instructions given inside carefully.

5. One page is attached for Rough Work at the end ofthe booklet before the Evaluation Sheet.

6. If you write your name or put any mark on any partof the Answer Sheet, except for the space allotted forthe relevant entries, which may disclose youridentity, you will render yourself liable todisqualification.

7. You have to return the Test booklet to theinvigilators at the end of the examinationcompulsorily and must not carry it with you outsidethe Examination Hall.

8. Use only Blue/Black Ball point pen.

9. Use of any calculator or log table etc. is prohibited.

10. There is NO negative marking.

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2D—8806

ELECTRONIC SCIENCE

PAPER—III

NOTE : This paper is of two hundred (200) marks containing four (4) sections.Candidates are required to attempt the questions contained in these sectionsaccording to the detailed instructions given therein.

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SECTION - I

Note : This section contains five (5) questions based on the followingparagraph. Each question should be answered in about thirty (30)words and each carries five (5) marks.

(5x5=25 marks)

Like bipolar transistor, the FET is a three-terminal device in which the current

through two terminals is controlled at the third. Unlike the BJT, however, field-effectdevices are controlled by a voltage at the third terminal rather than by a current.Another difference is that the FET is a unipolar device; that is, the current involves onlymajority carriers. The field-effect transistor comes in several forms. In a junction FET(called a JFET) the control (gate) voltage varies the depletion width of a reverse-biasedp-n junction. A similar device results if the junction is replaced by a Schottky-barrier(metal-semiconductor FET, called a MESFET). Alternatively the metal gate electrodemay be separated from the semiconductor by an insulator (metal insulator-semiconductor FET, called a MISFET). A common type uses an oxide layer as theinsulator (MOSFET). The various types of FET are characterized by a high inputimpedance, since the control voltage is applied to a reverse-biased junction or Schottkybarrier or across an insulator. These devices are particularly well suited for controlledswitching between a conducting state and a non conducting state, and are thereforeuseful in digital circuits. In fact, millions of MOS transistors are commonly used together

in semiconductor memory devices.

1. In JFET how the p - n junction control the effective cross-sectional area of a conductingchannel.

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3. Explain the operation of an enhancement mode MOSFET.

2. Discuss the fabrication of a MOSFET.

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5. Discuss the mechanism of current flow beyond pinch off in enhancement modeMOSFET.

4. Define the threshold voltage in case of enhancement mode and depletion mode MOSFET.

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SECTION - II

Note : This section contains fifteen (15) questions each to be answered inabout thirty (30) words. Each question carries five (5) marks.

(5x15=75 marks)

6. Explain with necessary diagram the various current components of an npn transistorand derive the relation between α and β for the transistor.

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8. Define (a) accuracy (b) sensitivity (c) resolution with reference to DAC.

7. Draw the circuit diagram of a regulated power supply and explain its operation.

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10. Illustrate the difference between structures and arrays in C programming.

9. What are the important features of 8051.

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12. Define the terms minimum length, optimum length and maximum length of pyramiddalhorn antenna.

11. What are TE, TM and TEM modes ?

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14. Explain what is meant by a graded index fiber, giving an expression for the possiblerefractive index profile.

13. Describe the meaning and importance of quantization error in a PCM system.

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16. Explain why fiber optic communication offers the largest bandwidth.

15. What is the basic difference between Choppers and Inverters.

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18. Discuss Hall effect in semiconductors.

17. What is meant by Transducers ? Mention different types of transducers.

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20. Mention different types of Memories.

19. What are four different types of control systems. Give example of each.

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21. Describe the physical mechanism of Zener breakdown. Draw a circuit which useszener diode to regulate the voltage across a load.

22. State clearly the Thevenin’s and Superposition theorems and explain their usefulnessin linear network analysis.

23. Draw the circuits of OPAMP integrator and differentiator. Explain their operations.

24. Give a schematic diagram of gunn diode and explain its principle of working.

25. What is the difference between LED and LASER. Explain the operation of p - n junctionlaser with energy band diagram.

SECTION - III

Note : This section contains five (5) questions. Each question carries twelve(12) marks and is to be answered in about two hundred (200) words.

(12x5=60 marks)

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26. (a) Explain the photovoltaic mode of operation of solar cell.

(b) Discuss triggering mechanism to switch SCR.

(c) Explain the operation of thermoelectric device

(d) What is Piezo-electric effect ? Mention some of its applications.

OR

(a) Explain the functions of micro controller and discuss its advantages ore 8086microprocessors.

(b) What are Interrupts ? Explain the following terms used in microprocessors.

(i) Instruction Cycle

(ii) Machine Cycle

(iii) T - States

(c) Write a program in C language to transfer data to the parallel port of a personalcomputer.

(d) With the help of block diagram, explain the architecture of 8085 microprocessor.

SECTION - IV

Note : This section consists of one essay type question of forty (40) marks tobe answered in about one thousand (1000) words on any of thefollowing topics.

(40x1=40 marks)

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Marks ObtainedFOR OFFICE USE ONLY

Total Marks Obtained (in words) .....................................

(in figures) ....................................

Signature & Name of the Coordinator ...............................

(Evaluation) Date .............................