November 2010 doc.: IEEE 802.15-15-10-0824-00-0thz Project ... · Re: doc.: 15-10-0824-00-0thz Abstract: Active Monolithic Millimeter-wave Integrated Circuits are today covering the

November 2010

Ingmar Kallfass, Karlsruhe Institute of Technology and Fraunhofer IAF

Slide 1

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Project: IEEE P802.15 Working Group for Wireless Personal Area NProject: IEEE P802.15 Working Group for Wireless Personal Area Networks (etworks (WPANsWPANs))

Submission Title: Active MMIC Technology for 240 GHz Wireless Data LinksDate Submitted: 8 November, 2010Source: Ingmar Kallfass, Fraunhofer Institute for Applied Solid-State PhysicsAddress: Tullastrasse 72, D-79108 Freiburg, GermanyVoice: +49 761 5159 486, FAX: +49 761 5159 71486, E-Mail: [email protected]: doc.: 15-10-0824-00-0thz

Abstract: Active Monolithic Millimeter-wave Integrated Circuits are today covering the entire millimeter-wave frequency range and enable highly compact and cost-efficient analog frontends. This contribution presents MMIC technology and components dedicated to broadband wireless communication between 200 and 300 GHz. First link demonstrations based on multi-functional MMIC transmitters and receivers are shown.

Purpose: Proof of concept of broadband active transmit and receive MMIC components for wireless data transmission in the frequency range from 200 to 300 GHz.Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for discussion and is not binding on the contributing individual(s) or organization(s). The material in this document is subject to change in form and content after further study. The contributor(s) reserve(s) the right to add, amend or withdraw material contained herein.Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE and may be made publicly available by P802.15.

November 2010


Slide 2

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Active MMIC Technology for 240 GHz Wireless Data Links

Ingmar Kallfass1,2, Daniel Lopez-Diaz1, Sebastian Diebold2, Jochen Antes2

Axel Tessmann1, Arnulf Leuther1

1 Fraunhofer Institute for Applied Solid-State Physics, Freiburg, Germany2 Karlsruhe Institute of Technology, Karlsruhe, Germany

November 2010


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doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Outline

• Introduction• Frontend Architecture• Enabling MMIC Technology• MMICs for Broadband Communication• First 220 GHz Link Demonstrations

November 2010


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doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Outline


November 2010


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doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Motivation for 200 – 300 GHz Communication

• Multi Gbit/s wireless capability

• Point-to-point– Fiber-over-radio– Radio-over-fiber (e.g. TV)

• Telecom base stations – Backhaul– Pico-cells– Last mile / fiber to the home

• Intra-machine communication– Sensor readout– Board-to-Board

0 50 100 150 200 250 300 3501E-4

1E-3

0.01

0.1

H2OH2O

O2

O2

atm

osph

eric

atte

nuat

ion

[dB/

m]

frequency [GHz]

H2O

1 bar, 20°C, 43.4% RH

November 2010


Slide 6

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Technologies for 200 – 300 GHz Communication

• Passives/diodes: e. g. Schottky

• Nonlinear optical

• Active MMIC– Multi-functional– Highly compact– Easy-to-deploy– Cost efficient

0 50 100 150 200 250 300 3501E-4

1E-3

0.01

0.1

H2OH2O

O2

O2

atm

osph

eric

atte

nuat

ion

[dB/

m]

frequency [GHz]

H2O

1 bar, 20°C, 43.4% RH

MMIC

Schottky, HEB, SIS...

frequency sources & mixers

optics: QCL, mixing...

November 2010


Slide 7

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Atmospheric Attenuation

• Broad atmospheric window from 200 to 300 GHz

• Clear sky: 2 – 4 dB/km

• Adverse weather– Fog: 1 - 6 dB/km– Rain: 10 - 20 dB/km

10 100 1000

0.1

1

10

Spec

ific

atte

nuat

ion

due

to F

og (d

B/km

)

Frequency [GHz]

0.5 g/m³

0.05 g/m³

liquid water density

1 10 100 1000

2

4

6

8

10

12

14

16

18

20

22

Spe

cific

atte

nuat

ion

due

to R

ain

(dB

/km

)

Frequency [GHz]

23 mm/h

35 mm/h

40 mm/h50 mm/h

Horizontal Polarization

Source: ITU-Recommendation ITU-R P.676-8

November 2010


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doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Outline


November 2010


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doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

System Considerations• Goal: incoherent transmission of APSK and >10 Gbit/s OOK signals• Direct detection (only OOK) or zero-IF (a) with IQ receiver and rectification/summation• Super-heterodyne (b): Single-ended and IQ mixers are possible• Coherent detection: challenging due to probably inadequate carrier phase noise

LOtx 240

data in

RF out LOrx 220RF in

240 within0 - 20 GHz

220within0 - 20 GHz

data out

240200 280

LOtx 240I Q

data in

RF out

0 - 40 GHz 240200

LOrx 240I Q

data out

RF in

√I +Q2 2

0 - 40 GHz 280

(a)

(b)

November 2010


Slide 10

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

MMIC Frontend Architecture (1)• Use broadband (~55-65 GHz) VCOs which

will become available for 60 GHz Wireless

200 - 280 GHz

LNA

I

antx2 SH mixerosc.

55-65 GHzQ

0+ - 40 GHz

PAI Q

November 2010


Slide 11

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

MMIC Frontend Architecture (2)• Use commercially available 10 GHz or 20 GHz VCOs

in combination with a frequency multiplier-by-twelve or –by-six

200 - 280 GHz

LNA

I

antx6 orx12 SH mixer

osc.

10 or 20 GHzQ

0+ - 40 GHz

PAI Q

November 2010


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doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Outline


November 2010


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doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

MMIC Technology Candidates

November 2010


Slide 14

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

State-of-the-ArtInP HEMTs / GaAs mHEMTs

• LNAs– Amplifiers up to 550 GHz– NF 4.8 dB at 210 GHz (on-

wafer)– NF 8.4 dB at 340 GHz

(waveguide module )

• PAs– 17 dBm at 220 GHz (module)– 10 dBm at 338 GHz (module)

50 100 150 200 250 3000

2

4

6

8

10

CMOS InP / mHEMT SiGe HBT

nois

e fig

ure

/ dB

freq / GHz

50 100 150 200 250 300 3500

5

10

15

20

25

30 InP p/mHEMTGaAs pHEMTInP HBTSiGe HBTCMOS

Pou

t,sat

/ dB

m

frequency / GHz

November 2010


Slide 15

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Why metamorphic?

Advantages

• better mechanical stability

• high quality substrates up to 6“

• different lattice constants

Disadvantage

• additional growth effort

Metamorphic and InP HEMTs :

• different substrates

• identical active layers

InP HEMT

mHEMT

InP

InGaAs/InAlAs

GaAs

Metamorphic buffer

InGaAs/InAlAs

November 2010


Slide 16

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Epitaxy

Al0.48Ga0.52As a = 5.65 (GaAs)

Al0.48In0.52As a = 5.87 (InP)

δ-dopingSi

spacern.i.d.In0.52Al0.48As

4“ si GaAs substrate

In0.52Al0.48As⏐ ⏐ n.i.d. metamorphic buffer

Ga0.52Al0.48As

buffern.i.d.I0.52Al0.48As

channel n.i.d.InxGa1-xAs

Schottky barriern.i.d.In0.52Al0.48As

capSiIn0.53Ga0.47As

RemarksDopingMaterial

November 2010


Slide 17

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Transistor Scaling100 nmfT / fmax = 220/300 GHz

50 nm375/600 GHz

35 nm515/900 GHz

20 nmFeasibility demonstratedOngoing development (epi, gate…)

20 nm

November 2010


Slide 18

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

MMIC Process

Frontside• Passives: MIM, resistors, etc.• SiN passivation• Microstrip or grounded coplanar• 50 µm and 14 µm ground-to-

ground spacing

Backside• substrate mode suppression• 50 µm wafer thinning• 20 µm via holes

SiNNiCrOHMMESA

GATE

SUBSTRATE

Au

METG

SiN

MET1 MET1

MIM on Via SiN

20 μm

November 2010


Slide 19

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Outline

• Introduction• Frontend Architecture• Enabling MMIC Technology• MMICs for Broadband Communication

– Low Noise Amplification– Frequency Multiplication– Frequency Conversion– Receivers and Transmitters

• First 220 GHz Link Demonstrations

November 2010


Slide 20

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Towards an all-MMIC-based 300 GHz Receiver

4-stage LNAGMMIC > 15 dBBW= 268-306 GHz

3-stage PAGMMIC,lin > 17 dBBW = 133-147 GHzPout,sat = 13 dBm

Active SixtuplerBW = 110-164 GHzPout,H6 = -2 dBmDoubler and Mixer

Lconv. < 12 dBBW = 260-308 GHz

X2 X2

LNA doubler + mixer PA multiplier-by-six

RF260 - 304

GHz

IF 0 - 4 GHz

LO18.3 - 25.3

GHz0°180°X3

November 2010


Slide 21

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

D-Band Frequency Multiplier-by-Six

Active UNBALDifferential stage

Balanced Tripler2-stage

class A FETs in compression Broadband HP and TP-type matching

Even-order rejection

Balanced DoublerClass-B push-push FETs

Cascode topology

November 2010


Slide 22

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

D-Band Frequency Multiplier-by-Six • 100 nm mHEMT technology

– fT / fmax = 220 / 300 GHz• Grounded coplanar TRL environment

3 mm

1.5 mm

November 2010


Slide 23

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

D-Band Frequency Multiplier-by-Six• Operating range: <110 – 164 GHz

• Bandwidth: 54 GHz (39 %)

• Output power: -2 dBm @140 GHz

• Conversion loss: 10 dB

• Spectral purity: > 20 dBc

• Supply– drain voltage: 2.2 V– current: 180 mA– power: 396 mW

110 120 130 140 150 160 170-40

-30

-20

-10

0

10Pin = 8 dBm

8th

7th

5th

4th

outp

ut p

ower

/ dB

m

6th harmonic frequency / GHz

6th

0 2 4 6 8 10

-50

-40

-30

-20

-10

0

5th

7th

6th

outp

ut p

ower

/ dB

m

input power / dBm

140 GHz (6th)

November 2010


Slide 24

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

300 GHz Frequency Doubler and Mixer

• Doubler– 50 nm mHEMT– 2x20 µm Class-B

FET– Fundamental λ/4

stub – Also as stand-alone

MMIC

• Mixer– 50 nm mHEMT– Resistive FET

λ / 4@ fLO

LO

T : 2x202

VG1 VD1

T : 2x201

VG2

RF

IF

doubler resistive mixer

0.75 mm

0.75 mm

November 2010


Slide 25

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

300 GHz Frequency Doubler and Mixer

Doubler• Output power: -6 dBm• Frequency range: 260 – 300

GHz

Doubler + Mixer• Conversion gain

– @ 0 dBm PLO (w/o PA): -20 dB– @ 3 dBm PLO (w/ PA): -12 dB– w/ LNA: 3 dB

250 260 270 280 290 300 3100

5

10

15

20

25

30

conv

ersi

on lo

ss [d

B]

RF frequency [GHz]

Ldoubler+mixer (incl. PA) Ldoubler+mixer (excl. PA)

-5 -4 -3 -2 -1 0 1 2 3 4 5 6 7-20

-15

-10

-5

0

outp

ut p

ower

[dB

m]

input power [dBm]

260 GHz 270 GHz 280 GHz 290 GHz 300 GHz 310 GHz

November 2010


Slide 26

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

200-300 GHz Mixers

LO

RF

I

50 Ω

100 Ω

0°

90°

Q

Conv. Loss 18.4 dB @ 2dBm PLOPhase imbalance +/-5° @ 188-220 GHz

RF LO

IF50 Ω

RF 160-260 GHz, IF 0-50 GHzConv. Loss <20 dB @ 0 dBm PLO

Subharmonic IQ Fundamental balanced

November 2010


Slide 27

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

in

Vg2

out

Vg1 Vd

GCPW 1200 μm

500 μ

m

H-Band Cascode mHEMT Amplifier S-MMIC

• 50nm mHEMT technology• cascode mHEMT• gate width: 2 × 10 µm• chip size: 0.6 mm2

• reactively matched• GCPW line impedance = 50 Ω

November 2010


Slide 28

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

180 200 220 240 260 280 300 320-30-20-10

0102030

S-Pa

ram

eter

s [d

B]

Frequency [GHz]

S21

S11 S22

H-Band Cascode mHEMT Amplifier S-MMIC

• gain: 19.5 dB @ 320 GHz

• gain: > 15.0 dB @ 240...320 GHz

• simulated NF = 7.3 dB @ 300 GHz

• power consumption: 90 mW (Vd = 2.0 V, Id = 45 mA)

November 2010


Slide 29

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

• power consumption:

530 mW (V = 5.0 V, I = 106 mA)

• gain: >19 dB @ 295…320 GHz

• max. gain: 21 dB @ 300 GHz

• matching: -10 dB @ 285…320 GHz

280 290 300 310 320 330-30

-20

-10

0

10

20

30

S-Pa

ram

eter

s [d

B]

Frequency [GHz]

S21

S11 S22

Four-Stage 300 GHz Amplifier Module (Lg = 50 nm)

November 2010


Slide 30

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Multifunctional Integration

• Wideband IF• Mirrored LNA in Transmitter• Identical chip interface for packaging• Receive conversion gain: 3.5 dB• RF transmit power: up to -1.5 dBm (LNA saturation)

X2

LNAdoubler

IF 0 - 50 GHz

LO110 GHz

mixer

Transmit

X2

LNA doublerRF

220 - 270GHz

IF 0 - 50 GHz

LO110 GHz

mixer

Receive

2000 μm

750 μ

m

November 2010


Slide 31

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Outline


November 2010


Slide 32

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

DVB-C Transmission at 220 GHz

• Carrier @ 220 GHz (LO @ 110 GHz)

• DVB-C media stream @ 64 QAM

• IF amplification 33 dB

SIGNAL GENERATOR

PA

x6

φ

PA

QAM Modulator with VHF/UHF Upconverter for PCI Bus

RXTX IF amp

W-bandsource module

November 2010


Slide 33

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

DVB-C Transmission at 220 GHz

November 2010


Slide 34

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Summary & Outlook

• Fully MMIC-based wireless transmission at 220 GHz demonstrated

• Broadband, high performance MMIC components based on metamorphic HEMTs are available in the frequency range 200 –300 GHz

Ongoing activities target• Fully integrated wideband transmit and receive MMICs featuring

– Subharmonic IQ mixers– PA stages in transmitters (goal: wideband 10 dBm Pout)

• Experiments for– Coherent OOK transmission (eye diagrams)– Incoherent super-heterodyne transmission

November 2010


Slide 35

doc.: IEEE 802.15-15-10-0824-00-0thz

Submission

Thank you for your attention!

Ingmar KallfassProf. Dr.-Ing.

Fraunhofer Institute for Applied Solid State Physics

Tullastraße 72D-79108 Freiburg/GermanyPhone: +49 (0)761 5159 486Fax: +49 (0)761 5159 71486Email: [email protected]: www.iaf.fraunhofer.de

Karlsruher Institut für Technologie (KIT)Institut für Hochfrequenztechnik und Elektronik

Kaiserstraße 1276131 KarlsruheTel.: +49-(0)721-608-2525Fax: +49-(0)721-691865E-Mail: [email protected]: www.kit.edu ; www.ihe.kit.edu

Documents

November 2010 doc.: IEEE 802.15-15-10-0824-00-0thz Project ... · Re: doc.: 15-10-0824-00-0thz Abstract: Active Monolithic Millimeter-wave Integrated Circuits are today covering the