Normally off GaN power switch transistorvisic-tech.com/wp-content/uploads/2018/02/V22N65A-ver-2.20.pdf · Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement

Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement changes at any time. www.visic-tech.com

Rev. 2.20 /

1/10

ALL Switch GaN Power Switch - DAS-02265-001

V22N65A

Description ALL-Switch is a System In Package (SIP) switch. A Normally-Off safe function is integrated within the package, designed according to SmartGaN topology, an innovation by VisIC Technologies. ALL-Switch V22N65A combines a patented, high-density, lateral-layout GaN power transistor, into a product with extremely low RDS(ON), exceptionally fast switching performance and a conveniently small footprint. It is very effective in applications requiring high efficiency, high power density and low cost. Enable Circuit is responsible for operation sequence of the All Switch device during a system start up and shutdown. It verifies the proper status of the gate driver and supply voltage. At normal switching operation mode, it has no impact on the switching performances of the GaN transistor.

Key features • Ultra-fast switching

• Kelvin connection

• Normally-Off

• High power density

• Fully isolated package (2.5KV)

• High noise immunity

• Driven by standard 12V MOSFET driver

• Top cooling

Applications

• Solar Inverter

• AC-DC Power Supply

• AC motors

• Battery chargers

• Automotive

• Laser driver

Key Performance Parameters Package Outline

Pins 8-12 are absolutely forbidden to apply any signals

Parameter Value

VDS (V) 650

RDS(ON) (mΩ) 22

QG (nC) 21

ID,pulse(A) 180

ID (A) 80

Pin Function Pin Function

1 Source 7 Drain

2 Activation signal 8 NC

3 Com signal 9 NC

4 Gate 10 NC

5 Com power 11 NC

6 Enable 12 NC

2 3 4 5 6 7

12 11 10 9 8

Pin 1


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V22N65A

1) Duty cycle =10% and pulse width limited by Tjmax 2) See Typical Operating Circuit, VGS defined between terminals 4&1

Maximum ratings (Tc =25ºC unless otherwise specified)

Parameter Symbol Values

Unit Conditions Min Typical Max

Continuous drain current ID - -

- -

80 58

A TC =25C

TC =100C

Pulsed drain current1) ID,pulse - - 180 A

Gate source voltage2) VGS -15 - +5 V

Power dissipation PTOT - - 278 W

Operating and storage temperature

Tj ,Tstg -55 - + 150 C

TC - - +150

Continuous reverse current Is - - 70 A

Reverse pulse current1) Is,pulse - - 140 A

Thermal characteristics



Thermal resistance, junction-case

RθJC - - 0.3 C/W

Junction to top thermal pad

Thermal resistance, junction -ambient

RθJA - - 65 C/W

Soldering peak temperature Tsold - - 260 C from case for 10s


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V22N65A

1) After applying Activation signal

2) Refers to driver GND, see typical operating circuit. Threshold voltage defined as Vth=VDout-7.5V=12-7.5=4.5V

3) GaN transistor

4) VDout Driver output voltage, 12V

Electrical characteristics (Tc =25C unless otherwise specified)



Static

Drain-source breakdown voltage V(BR)DS 650 - 800 V VGS= -12V, Id= 1mA

Gate threshold voltage1)2) Vth 4.5 5 5.5 V ID=1mA, VDD=12V

Drain source leakage current1) IDSS - 2 3

µA

VDout 4)=0V, VGS= -12V

VDS= 650V Tj=25C

- 75 200 VDout

4)= 0V, VGS= -12V

VDS= 650V Tj=150C

Gate leakage current3) IGSS - 3 5 nA VDS= 400V VG= 0V, VGS= -12V

Gate resistance RG - 0.7 - Ω f =1Mhz

Drain-source on state resistance RDS(ON)

- 22 27

mΩ

VG=12V ID=35A

Tj =25C

- 42 52 VG=12V ID=35A

Tj =150C

Reverse voltage drop- GaN non conductive

VR - - 10

V ID=10A Tj =25C

- - 12 ID=10A Tj =150C

Reverse voltage drop- GaN conductive

VR - - 0.2

V ID=10A Tj =25C

- - 0.4 ID=10A Tj =150C

Reverse recovery time trr - - 0 ns

Reverse recovery charge Qrr - - 0 nC

Output Charge Qoss - - 171 nC VG=0V VDS=400V

Activation signal2) V(As,En) - 0 - V VDD= -12V

Dynamic

Input capacitance Ciss - 760 800

pF f=1MHz VG=0V VDS=400V

Output capacitance Coss - 200 240

Reverse transfer capacitance Crss - 1.3 2.6

Effective Output Capacitance, Energy Related

CO(ER) - - 427 pF VG=0V VDS=0 to 400V

Turn-on delay time td(on) - 9 -

ns

VDS=400V VG=0 -12V RG=2.2 Ω ID=35A

Fall time tf - 10.8 -

Turn-off delay time td(off) - 15.5 -

Rise time tr - 6.5 -


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V22N65A

1) After applying Activation signal 2) Refers to driver GND, see typical operating circuit 3) Refers to Pin 1

Package Outlines

Electrical characteristics (Tc =25ºC unless otherwise specified)



Gate charge characteristics

Gate to source charge1) QGS - 3.2 -

nC VGS2)=0V to 10V

VDS=400V ID=30A

Gate to drain charge1) QGD - 12 -

Total gate charge1) QG - 21 -

Gate plateau voltage1) Vplateau 6 - 7 V

Case to drain Capacitance

Capacitance CC - 20 - pF @ 1 MHz 0.1V RMS

Pin Characteristics



Pin 2 Activation signal 2)

Disable voltage Pin 2 0 - 9.1 V

VDS=400V Enable voltage Pin 2 9.3 12 15

Pin 3 Com signal 3)

Voltage at disable mode Pin 3 8 V

VDS >20V

Voltage at Enable mode Pin 3 0 0 0.1 V31=Id*0.002

Pin 4 Gate 2)

Gate Voltage for non-Conducting mode

Pin 4 0 - 4.5 V

VDS=400V

Gate Voltage for conducting mode Pin 4 5.5 - 12

Pin 5 Com Power 2)

Pin 5 10 12 15 V

Pin 6 Enable must be connected to pin2


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V22N65A

Typical Operating Circuit


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Rev. 2.20 /

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Electrical characteristics diagrams

Fig.1: Power dissipation Fig.2: Drain-source on-state resistance

Fig. 3: Gate charge Fig.4:Typical capacitances


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V22N65A

Fig. 5: Typical Coss stored energy

Figure 6: Switching Energy vs Drain Current

including diode commutation energy

Fig.7: Forward and Reverse conductivity

Fig.8. Safety Operation Area (SOA)


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V22N65A

Fig.9: Transient Thermal Impedance

Fig.10: Switching time vs. Rg (external)


Rev. 2.20 /

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V22N65A

Circuit Used for Switching Energy measurement for inductive load

Switching Time Waveforms

Important Notice – VisIC Technologies reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products, latest issue, and to discontinue any product. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Unless expressly approved in writing by an authorized representative of VisIC technologies , VisIC technologies components are not designed or tested for use in, and is not intended for use in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, weapons systems, authorized or warranted for use in lifesaving, life sustaining, military, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. VisIC Technologies hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. All rights reserved.

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Normally off GaN power switch transistorvisic-tech.com/wp-content/uploads/2018/02/V22N65A-ver-2.20.pdf · Preliminary Data Sheet: VisIC, Ltd. reserves the right to make design improvement