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Nilton Morimoto
General Manager: Jacobus Swart
The Millennium Institute Program and Projects
SCMN
NAMITEC
General overview
MEMS Activities
Micromachining techniques
MEMS device development
Irrigation control system
Concluding remarks
•2001 – 2005: SCMN - Research Network on System-on-Chip,
Microsystems and Nanoelectronics•17 projects / all fields
•2005 – 2008:NAMITEC - MIcro and NAnoelectronics TEChnologies for Intelligent Integrated
Systems -•34 projects / all fields•Value: R$ 4.540.000,00 (~US$ 2.7 million)
São Paulo
Porto Alegre
Florianópolis
Campinas
Recife
Brasília
Rio de JaneiroSão Carlos• 59 PhD researchers• 11 groups/departments• 8 institutions• 8 cities• 6 states
SCMN (2002-2005):
São Paulo
Porto Alegre
Florianópolis
Campinas
Recife
Brasília
Rio de Janeiro
Campina G.
São Luiz
Belo Horizonte
NAMITEC (2005-2008):
• 93 PhD researchers• 28 groups/departments• 18 institutions• 12 cities• 10 states
São Carlos
Natal
NAMITEC – Objectives:NAMITEC – Objectives:SoC and sensor networkmethodologies and tools for the design and
test of low-power and fault-tolerant integrated circuits, including analog, RF and digital circuits
micro- and nanoelectronic devices, photonic and optoelectronic devices, MEMS and NEMS, and their integration and packaging processes
micro- and nanofabrication materials and techniques, required for the manufacturing of integrated devices and circuits
Goals:Goals:1) Systems on chip:
i) To develop a design platform for systems on chip.
ii) To develop architectures of systems on chip.
iii) To develop an environment for SoC applications.
iv) To develop test methodologies, including design aimed at testability, CAD, test techniques.
v) Construction of a reconfigurable System on Chip.
vi) Demonstration of a pilot unit of a system of precision irrigation control based on SoC, developed within the SCMN (our previous Millennium project).
vii) Demonstration of pilot units of the system for monitoring and scanning of animals and fruit plants.
viii) Demonstration for the system of water quality monitoring.
2) Circuits and tools for physical synthesis:
i) To develop new analog, RF and digital circuits.
ii) To develop new tools for automatic physical synthesis.
iii) To develop methodologies for physical synthesis of
digital circuits, which do not depend on the use of cell
libraries, allowing for a real logic circuit minimization.
iv) To develop new fault tolerant circuits.
3) Electronic and photonic devices and MEMS/NEMS:
i) To develop FinFET/SOI transistors .
ii) To develop CNT based devices: transistor e gas sensor.
iii) To develop optoelectronic and photonic devices.
iv) MEMS/NEMS devices.
v) Organic devices.
4) Materials and techniques of micro and nanofabrication:
i) Nanofabrication techniques: electron beam lithography, lithography
by AFM, nanofabrication by FIB, plasma etching. Development of
advanced nanofabrication techniques.
ii) Synthesis of CNT: Development and modeling of new processes of
aligned CNT growth for applications in electronics and chemical
sensors.
iii) Synthesis of Nanofibers: Development of electrochemical process
of metal nanofiber synthesis for applications in chemical sensors.
Development of the electrospinning process for synthesis of
polymeric nanofibers for applications in chemical sensors.
iv) Synthesis of Si and Ge nanoparticles. Development of the
nanoparticles growth processes aiming at their applications in
optoelectronics and for charge storage (memory).
v) High k dielectrics. Development of the processes of growth and
characterization for new high k dielectrics, required for sub 100 nm
transistors, among them: compounds such as HfSiON, HfAlO,
AlNO, oxynitrides of Si with metals. Study of the MOS systems
thermal stability.
vi) Processes of thin and ultrathin films growth: Si-poly, TiN,
Cu, silicides, dielectrics, and polymers. Microchemical and
morphological characterization of thin films; detection,
characterization, creation, elimination and applications of electrical
domains in isolators.
IC Design:IC Design:
EMC
RF Blocks
Front-end of reconfigurable radio
Amplifier for Bio-potentials
New APS structures
R.H. APS CellAPS Matrix
High-k Requirements (Thermodynamics and Stability)
Preserve capacitance of gate after the processing
After sintering 450oC/30min
Ti (from electrode) incorporated at the
SiON film
B (from substrate) incorporated at the SiON
film and the Al/Ti electrode
Source: Diniz
Carbon NanotubesCarbon Nanotubes Plasma Deposition
Photonic and Electronic Application of Carbon Nanotubes Deposition of Nanostructured Carbon Thin films Photonic and Electronic Application of Nanostructured
Carbon Thin films
04/18/23Centro de Componentes Semicondutores – UNICAMP (www.ccs.unicamp.br) 16
CNTs for interconnects•MWNTs: controlled deposition between metal electrodes from solutions using ac di-electrophoresis; •2 and 4 points measurements using FIB: Resistance MWNTs produced by CVD at T~900C (10 k/m) is too high for interconnection applications;
VI I1 32 4
4-points, side-contacted MWNTFIB ID Pt FEB ID Pt
FinFETs
Microsquids
Nanostructures by e-beam lithography
Nanostructures by e-beam lithography
50nm x 10m lines
4
123
-300 -200 -100 0 100 200 3001.170
1.175
1.180
1.185
1.190
1.195
H (Oe)
I (V
)
-300 -200 -100 0 100 200 300
1.270
1.275
1.280
1.285
1.290
H (Oe)
I (V
)
-300 -200 -100 0 100 200 300
1.295
1.300
1.305
1.310
1.315
H (Oe)
I (V
)
-300 -200 -100 0 100 200 3000.805
0.810
0.815
0.820
0.825
0.830
H (Oe)
I (V
)
-300 -200 -100 0 100 200 300
0.955
0.960
0.965
0.970
0.975
H (Oe)
I (V
)
-300 -200 -100 0 100 200 3001.340
1.345
1.350
1.355
1.360
1.365
H (Oe)
I (V
)
-300 -200 -100 0 100 200 300
1.345
1.350
1.355
1.360
1.365
H = 14 Oe
H (Oe)
I (V
)
-300 -200 -100 0 100 200 300
1.340
1.345
1.350
1.355
1.360
1.365
H = 14 Oe
H (Oe)
I (V
)
-300 -200 -100 0 100 200 300
1.040
1.045
1.050
1.055
1.060
H = 15 Oe
H (Oe)
I (V
)
-300 -200 -100 0 100 200 3001.245
1.250
1.255
1.260
1.265
1.270
H = 12 Oe
H (Oe)
I (V
)
-300 -200 -100 0 100 200 300
1.330
1.335
1.340
1.345
1.350
H = 12 Oe
H (Oe)
I (V
)
-300 -200 -100 0 100 200 300
1.300
1.305
1.310
1.315
1.320
H (Oe)
I (V
)
56
789
101112
Loops de histerese locais obtidos por SNOMem partículas de 0,5µm a 16µm
Nanomagnetic structures
Graphene on SiliconFonte: Science, 2008
Nanoelectronic Devices on Graphene
Electronic Transport
Nanostructures by e-beam lithography
MEMS DevicesPressure sensorsGlucose sensorElectrochemical sensorGas sensorsGas flow sensorBolometer – IR detectionTHz Resonant filters
Piezo-resistive Pressure sensors
= 0.32xPD + 38.9
38
39
40
41
42
43
-1 1 3 5 7 9 11
Differential Pressure PD [psi]
Ou
tpu
t V
olt
age
no [
mV
]
-0,6
-0,4
-0,2
0
0,2
0,4
0,6
0,8
No
n-L
inea
rity
[%
]
Experimental
Nonlinearity
Curve Fit
Sensitivity: 0.34 mV/psi
PiezoMOS Pressure sensor
Sensitivity: 9 mV/psiPower consumption: 3 W.
o = 8.9xPD + 601
580
600
620
640
660
680
700
-1 1 3 5 7 9 11
Differential pressure PD [psi]
Out
put v
olta
ge
o [m
V]
-1,5
-1
-0,5
0
0,5
1
1,5
Non
linea
rity
[%]
ExperimentalNonlinearityCurve Fit
Piezoresistive Pressure sensor(LSI/Namitec and HCA/Pipe Fapesp)
Nipple Microsensor
(stainless steel AISI 316)
Die sensor
Cell
Feed through (nipple)
chip dimensions: (15.000 x 1.200) m x m.
Microsensor mounted over the cell
PackagingComplete Pressure
sensor
Pressure Cell
Nipple Cell over nipple
Wireless Transceiver to pressure sensor
Bio-chemical NO sensor in vivo measurement
Integrated System for water quality control using microsensors and LTCC technology
Gas Flow Sensor
Al
Si
SiO2
B-doped Si
•Microheater : poly-si p type;
• 0.5 x 20 x 200m;
•Flow with controlled temperature
•Circuits for interface and conditioning
At T= 27 ºC: • R = 401,92 • TCR = 1.50 ppm/ºC
P-doped poly-Si
heater
+ + ++ +
Glucose SensorGlucose Sensor
Biosensor StructureBiosensor Structure
Sistema de eletrodos (trabalho, referência e auxiliar) sem modificação. Magnificação de 500x.
Rattus norvergicus
Glucose Sensor x Destro (continuous test)Glucose Sensor x Destro (continuous test)
Polimeric nanofibers Polimeric nanofibers recovered by electroless recovered by electroless depositiondeposition
Without metal depositionWithout metal deposition
With metal depositionWith metal deposition
The non-woven fabrics obtained in the electrospun process:
The obtained material of fibers is recovered by metal by electroless process in order to obtain a substrate sensible and or selective for gas sensors applications
May be used as an electrode in a dye based photovoltaic cell
May be used as a layer in a preconcentrator structure
To obtain metallic tubes in nanometric range
With metal depositionWith metal deposition
Hidrogen Nanosensors Polymeric nanofibers
Hydrogen sensitive layer
Ceramic templates for nanorods
SAW Sensor – for gas detection
Colpitts type oscillator – one port SAW resonator
C
CC1C=0.8 pF
pb_nec_NE68019_19960501Q3R
RbR=34800 Ohm
RReR=360 Ohm
RRcR=36 Ohm
LL1
R=L=18 nH
CC2C=18 pF
V_DCSRC2Vdc=12 V
V_DCSRC1Vdc=12 V
C0C=1.8 pF
PortoutputNum=1
DC_BlockDC_Block3
DC_BlockDC_Block2
DC_BlockDC_Block1
SAW
GND
433MHz
SAW:Quartz - Cut = ST-XFrequency = 433 MHz = 7.3 mAl fingers, t = 250 nmW = d = 1.82 m
Sensitive layer:Thin film of TiO2
Thickness: 25 to 100 nm
Bolometer – suspended poly-Si resistor with gold-black absorber
Fabrication
Gold-Black Layer
Suspended Membrane
FabricationPoly-Si
Gold-Black
Ti-Au
• EM design• Thin and thick (soft) lithography capabilities to achieve substrate and substrate-less
structures for RF filtering.
Irrigation Control SystemGeneral architecture
Sensor selection
Hybrid system demonstration
Design of a SoC.
System on Chip:SoC Integration
Integrated SoC Layout and Picture
Microsystems on a PackageProcess intensifiers: Microfluidic Devices for
Nanoparticle Generation/Encapsulation
Microsystems on a Package
Micro-Analytical SystemsContaminants in Water (Heavy Metals,
Phosphates, etc.)
Pb ++
NAMITEC - Summary Increased number of institutions and membersIncreased interdisciplinarityIncreasing cooperation with other institutions &
companies Innovation in many issuesMany students involved (under & graduate & pos-doc)Teaching of microtechnologiesImproved installationsSocial, economical and environmental important
applications: irrigation control system, sensor networks, etc.
Importance of the field for Brazilian industrial policy – priority for semiconductors.
Acknowledgments:MCT/CNPq for financial support
To all NAMITEC members for the results
Contacts:[email protected]://www.ccs.unicamp.br/namitec
Conference announcements:
THE END/FIM