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B e l g i u m / D e n m a r k / F r a n c e / G e r m a n y / I t a l y / N e t h e r l a n d s / N o r t h E u r o p e & C I S /Ex
hi
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November
Vision 2007 (Stuttgart / Germany) 06.11. - 08.11. 2007
UKAEA (Oxford / UK) 08.11. 2007
Productronica 2007 (Munich / Germany) 13.11. - 16.11. 2007
35th Scottish Microscopy Symposium (Dundee / UK) 14.11. 2007
Medica 2007 (Dusseldorf / Germany) 14.11. - 17.11. 2007
Physics of Living Matter (PLM) Symposium II (Cambridge / UK) 15.11. - 16.11. 2007
XVIII ISDP SYMPOSIUM (Paris / France) 15.11. - 17.11. 2007
BSM Meeting (Liège / Belgium) 16.11. 2007
Carrefour Pathologique (Paris / France) 19.11. - 23.11. 2007
Colloque “Biologie des Interactions Cellulaires”(Marseille / France) 21.11. - 23.11. 2007
January
Electronics/EP (Stockholm / Sweden) 28.01. - 30.01. 2008
February
IPOT (Birmingham / UK) 13.02. - 14.02. 2008
MEDTEC (formerly MDT) (Birmingham / UK) 13.02. - 14.02. 2008
December
Videomicroscopy Course (Genova / Italy) 03.12. - 06.12. 2007
NEWS 2007 Vol.2
March
Photonics ’08 (Moscow / Russia) 11.03. - 13.03. 2008
Sejem Elektronike 2008 (Ljubljana / Slovenia) 18.03. - 20.03. 2008
Europtrode IX (Dublin / Ireland) 30.03. - 02.04. 2008
B e l g i u m / D e n m a r k / F r a n c e / G e r m a n y / I t a l y / N e t h e r l a n d s / N o r t h E u r o p e & C I S /
P o l a n d / P o r t u g a l / R u s s i a / S o u t h A f r i c a / S p a i n / S w i t z e r l a n d / U n i t e d K i n g d o m
NEWS2007 Vol.2
Photo ICs with Various Functions and Specifications
01
New Version of Sealed100kV Microfocus X-raySource
06
New High Voltage PowerSupply Unit Series
08
UV Sensitive PhotonCounting Heads
12
New Luminescence Plate Reader
18
New Learning Center on the HamamatsuHomepage
26
Digital X-ray Image Sensors
for X-ray Radiology
Belgium . Denmark . France . Germany . Italy . Netherlands . North Europe & CIS . Poland . Portugal . Russia . Spain . South Africa . Switzerland . United Kingdom
Freephone Europe: 00 800 800 800 88 e-mail: [email protected] www.sales.hamamatsu.com
P o l a n d / P o r t u g a l / R u s s i a / S o u t h A f r i c a / S p a i n / S w i t z e r l a n d / U n i t e d K i n g d o m
April
Analytica 2008 (Munich / Germany) 01.04. - 04.04. 2008
Automaticon 2008 (Warsaw / Poland) 01.04. - 04.04. 2008
PHOTONICS EUROPE (Strasbourg / France) 08.04. - 10.04. 2008
Expo Electronica ’08 (Moscow / Russia) 25.04. - 28.04. 2008
May
Sensor + Test 2008 (Nuernberg / Germany) 06.05. - 08.05. 2008
BIAS 2008 (Milano / Italy) 27.05. - 30.05. 2008
June
FORUM LABO (Paris / France) 03.06. - 06.06. 2008
Optatec (Frankfurt / Germany) 17.06. - 20.06. 2008
Microscience 2008 (London / UK) 23.06. - 26.06. 2008
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26
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30
32
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Line-up UVtrons
Spatial light modulation with
LCOS-SLM X10468 series
PHEMOS digital lock-in kit M10383 forimproving OBIRCH analysis
Femtosecond Streak Camera
with Optical Switch
for Ultrafast FEL DiagnosticsSpectroscopy of Combustion Flame
from Diesel and Gas Engines
New solar blind
ruggedized PMTs
Gated Photomultiplier
Tube Module
Opto-semiconductors
and its modules
New Detector for TOF-MS
Contents
Solid State Products
X-Ray
Electron Tube Products
Themos
FDSS/RayCatcher
Phemos
NanoZoomer
Cameras
Application Report
Short Note
Company News
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Vision 2007 (Stuttgart / Germany)06.11. - 08.11. 2007
UKAEA (Oxford / UK)08.11. 2007
Exhibitions
1 Line-up of Photo ICs
Photo ICs with various functions and specifications
NEWS 2007 Vol.2
The photo IC is a light receiver element withvarious functions. Photosensitive elementsand signal processing circuit are integrated ina complete package.
Photo transistor
Feature
Photo IC integrates a photodiode, amp, schmitt trigger circuit and output transistorinto one chip.Employs synchronous optical detection to ensure stable output even under fluctuatingbackground light.
Has spectral response characteristics close to human visual sensitivity.As easy to use as a photodiode, yet offers high current output similar to phototransistors.
Outputs an oscillating frequency (duty ratio 50 %) proportional to input light intensity.
Has sensitivity to red (λp=615 nm), green (λp=540 nm) and blue (λp=465 nm) light.
Photo IC transmitters and receivers for plastic optical fiber communications.
Has functions needed for industrial optical switches.
Uses a 4-element photodiode that can be used to easily configure an encoder with2-phase digital output.
For detecting laser beam print-start timing in laser beam printers and digital copiers.
Amplifies the current generated by input light. Allows a larger current to be drawneven from a small active area when compared to photodiodes.
Digital
Digital
Analog
Digital
Digital
Digital(Receiver photo IC)
Digital
Digital
Digital
Analog
Output
Schmitt trigger photo IC
Light modulation photo IC
Photo IC diode (Illuminance sensor)
Light-to-frequency converter photo IC
Digital color sensor
Photo IC for optical link (POF)
Photo IC for optical switch
Photo IC for encoder
Photo IC for laser beamsynchronous detection
esu lareneg roF
esu laic eps roF
Hamamatsu photo ICs and related products
Type No.
1.2 × 1.2S97064 × 4.8 × 1.8t
6-pin (Filter 0.75t)
615540465
Peak sensitivitywavelength
(nm)
Active area size(mm)
Package(mm)
Photo
RGB
woL
RGB
0.640.450.21
hgiH
RGB
5.84.11.9
Photo sensitivity(LSB/lx)
Digital Colour Sensor S9706Digital Colour Sensor S9706
S9706 is a digital colour sensor sensitive tored (λ=615 nm), green (λ=540 nm) and blue(λ=465 nm) regions of the spectrum.Detected signals are serially output as 12-bitdigital data. Three built-in 12-bit registers allowsimultaneous measurement of RGB colours.
Vdd
GND
I/F
R
I/F
G
I/F
B
Range
DoutSERIALCONVERTER
REGISTER
REGISTER
REGISTER
TIMINGCIRCUIT
CK
Gate
Block diagram
WAVELENGTH (nm)
YTI
VITI
SN
ES
EV I
TAL
ER
400 500 600 700 800
(Typ. Ta=25 )
3000
0.2
0.4
0.6
0.8
1.0
BLUE
GREEN
RED
Spectral response
4 5
Medica 2007 (Dusseldorf / Germany)14.11. - 17.11. 2007
35th Scottish Microscopy Symposium (Dundee / UK)14.11. 2007
35th Scottish Microscopy Symposium (Dundee / UK)14.11. 2007
Physics of Living Matter (PLM) Symposium II (Cambridge / UK)15.11. - 16.11. 2007
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1 Line-up of Photo ICs
Type No.
Photo IC diode
Light-to-frequencyconverter photo IC
Maximumreverse voltage[Supply voltage]
S9648-100
S9067-111
S10604
S9705
Rise time
(ms)
φ5 × 3.5t
2-pin plastic
3.2 × 2.7 × 1.1t
COB
2.0 × 1.25 × 0.8t
COB
3.0 × 4.0 × 1.3t
4-pin plastic
-0.5 to +16 V
-0.5 to +12 V
[2.7 to 5.5 V]
Package(mm)
320 to 820
380 to 700
N E W
Photocurrent *
[Output frequency] *
Analog current output
Frequency output fordirect interface to
microcomputer*100 lx
Type Output
6
-
Spectralresponse range
(nm)
0.29 mA
0.3 mA
0.3 mA
[50 kHz]
Photo
Line-up of Hamamatsu illuminace sensors
MONITORINGPHOTODIODE
CATHODE
ANODE
CL RL
Vout
REVERSE BIASPOWER SUPPLY
THE DRAWING SURROUNDEDBY THE DOTTED LINE SHOWSA SCHEMATIC DIAGRAM OFTHE PHOTO IC. CURRENT AMP
(APPROX. 13000 times)
PHOTODIODEFOR SIGNAL DETECTION
INTERNAL PROTECTIONRESISTANCE(APPROX. 150 )
Block diagram S9648-100, S9067-111, S10604
5 V 0.1 µF
Vdd
GND
OUTPUT
RESET
MICROCOMPUTER
ILLUMINANCESENSOR
COUNTER /TIMER
S9705
Circuit example S9705
NEWS 2007 Vol.2NEWS 2007 Vol.2
Illuminance Sensors
Photo IC diodes are photo ICs with spectralresponse characteristics close to human visualsensitivity. They are as easy to use as a photo-diode, yet offer high current output similar tophototransistors.The S9705 is a CMOS photo IC combininga current-to-frequency converter and photo-diode. This photo IC outputs an oscillatingfrequency (duty ratio 50%) proportional toinput light intensity.
Spectral response S9648-100, S9067-111, S10604
Spectral response S9705
Type No.
800
850
800
850
800
Allowable backgroundlight level
(lx)
S4282-51
S4289-61
S6809
S6846
S6986
S7136
S7136-10
S10053
0.7
0.2
0.7
0.2
0.7
10000
4000
3000
10000
3000
10000
Thresholdlight level *(µW/mm2)
Large allowable background light level
Asynchronous detection
High sensitivitySmall hysteresis
High sensitivity
Large allowable background light level
High sensitivity
High sensitivity
Large allowable background light level
4.5 to 16
Peak sensitivitywavelength
(nm)
Operatingsupply volage
(V)Feature Package
DIP type clear plastic
DIP type visible-cut plastic
SIP type visible-cut plastic
SIP type visible-cut plastic
SIP type clear plastic
DIP type visible-cut plastic
Surface mount typevisible-cut plastic
Surface mount typeclear plastic
* λp=940 nm
Line-up of Hamamatsu light modulation photo ICsLight Modulation Photo ICs
Light modulation photo ICs employ synchro-nous optical detection to ensure stable outputeven under fluctuating background light.A photodiode, preamplifier, comparator, oscil-lator, LED driver and signal processing circuit,are all integrated on a monolithic photo ICchip. Optical synchronous photoreflectors andphotointerrupters, which are less susceptibleto disturbance background light, can be easilyconfigured simply by connecting an externalLED to the photo IC.
CONSTANTVOLTAGE CIRCUIT
COMPARATOR
BUFFERAMP
OUTPUT CIRCUITPREAMP
SIGNAL PROCESSINGCIRCUIT
TIMINGGENERATOR
LED DRIVERCIRCUIT
PHOTODIODEOSCILLATOR
Enlargement of chip
CONSTANTVOLTAGE
BUFFER
SIGNALPROCESSINGCIRCUIT
TIMINGGENERATOR
OSCILLATORLEDDRIVER
OUTPUTCIRCUIT
GND
CATHODELED
Vout
Vcc
COMPARATOR
PRE-AMPLIFIER
PD
Vref
Block diagram
Type No.
380 to 1120
Allowable backgroundlight level
(lx)
S6841
S8119
0.05
0.1
5000
10000
Thresholdlight level (µW/mm2)
High sensitivity type
Large allowablebackground light level
4.5 to 5.5
Spectralresponse range
(nm)
Operatingsupply volage
(V)Feature Package
Surface mount typeclear plastic
Line-up of Hamamatsu photo ICs for optical switchPhoto ICs for Optical Switch
These photo ICs include functions needed forindustrial optical switches. A transmissionmode or reflection mode optical switch can beeasily configured when combined with an LED.
Productronica 2007 (Munich / Germany)13.11. - 16.11. 2007
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Colloque “Biologie des Interactions Cellulaires”(Marseille / France)21.11. - 23.11. 2007
1 Line-up of Photo ICs 2 Line-up of flat panel sensors for radiology
Digital X-ray Image Sensors for X-ray Radiology
Hamamatsu offers a comprehensive rangeof flat panel sensors which are ideal for vari-ous x-ray detection applications.The latest line-up includes the advantagesof single crystal Si, yet has extended analog
NEWS 2007 Vol.2NEWS 2007 Vol.2
Transmitter/Receiver Photo IC andRed LED for Optical Link (POF)
The transmitter photo IC contains a Red LEDand its driver IC. The receiver photo IC is amonolithic photo IC made up of a PIN photo-diode and analog amplifier integrated onto onechip. (only S10062 is a hybrid type)
In-vehicle networks can be divided into thosefor controlling doors, windows and air condi-tioners, those for controlling engines, brakesand suspensions, and those for informationtransmission. Optical communications areused by in-vehicle information transmissionnetworks. There are two standards for infor-mation transmission networks: the MOST(Media Oriented Systems Transport) networkswidely used by European automakers and theAMI-C (Automotive Multimedia Interactive
MOST and AMI-C network configuration –— What are in-vehicle networks?
4 Mbps 156 Mbps
20 m
Pseudo-PECL
5.2 4.5 mm
-
S7727
L9534
DC 156 Mbps
LED
5.2 4.5 mm
-
3 to -6.5 dBm (30 mA)
High speedHigh output
Factory/office automation
DC 50 Mbps
10 m
Pseudo-TTL
5.2 4.5 mm
-
Compatible withburst mode data
S7141-10
4 Mbps 50 Mbps
35 m
TTL
5.2 4.5 mm
S8046
High sensitivity
L8045
DC 50 Mbps
3 to -8 dBm (20 mA)
LED
5.2 4.5 mm
High reliability
Factory automation
S10062
125 Mbps to 250 Mbps
25 m
LVDS
5.5 6.0 mm
Sleeping mode
Compatible withAMI-C13974 network6-pin package
L10061
125 Mbps to 250 Mbps
Transmitter photo IC
5.5 6.0 mm
Compatible withAMI-C1394 networkRC-LED6-pin packageStandby mode
2.5 to -7 dBm
LVDS
In-vehicle network (AMI-C)
4 Mbps 50 Mbps
35 m
TTL
7.2 5.9 mm
S10064-01
Compatible withMOST networkHigh resistance to heat
L10063-01
4 Mbps 50 Mbps
7.2 5.9 mm
Compatible withMOST networkHigh resistance toheat
2.5 to -8 dBm
TTL
In-vehicle network (MOST)
Photo
Data rate
Transmission distance(dynamic range)
Output interface
Package size
Function
Features
Type No.
Data rate
Optical output
Features
Type No.
Application
Photo
Tra
ns
mit
ter
ph
oto
IC
/ L
ED
Re
ce
ive
r p
ho
to I
C
Product name
Input interface
Package size
Transmitter photo IC
edom gnipeelSedom gnipeelS
Line-up of Hamamatsu transmitter/receiver photo IC for POF transmission
MOST networks AMI-C networks
Note: iPod is the registered trademark of Apple Computer Inc.
and digital performances which has beenachieved through CMOS technology andsuperior scintillators.These include sensors for rotational radiog-raphy, biochemical and diffraction, so users
can choose the optimum flat panel sensorsto meet their specific application needs.
Pixel sizePhotodiode areaNumber of active pixels
Frame rate *1
Noise *2
Sensitivity *3
Resolution *4
Dynamic rangeX-ray tube voltageDigital output (Interface)Scintillator
200124.8(H) × 124.8(V)
608(H) × 616(V)30
260060002.5
320020 to 90
13 (LVDS differential)
µmmm
pixels
frames/selectronsLSB/mR
line pairs/mm-
kVpbits
-
Parameter C9311DKC10322D C9250DP Unit
200124.8(H) × 124.8(V)
608(H) × 616(V)30
250024002.5
4000
Direct deposition CsI
100124.8(H) × 115.2(V)1232(H) × 1120(V)
3015002000
52600
20 to 8012 (LVDS differential)
*1: Single operation*2: Internal trigger mode, single operation*3: At 80 kVp, acrylic filter 170 mm*4: Spatial frequency at CTF=5 %
N E W
(Ta=25 , Typ. unless otherwise noted)
SpecificationsRotational Radiography
The high speed radiography series, weredeveloped for cone beam CT applications upto 80 kVp (up to 90 kVp for C10322D).The thick direct deposition CsI scintillator andhigh gain charged amplifier deliver both highsensitivity and 30 frames/s image speedrespectively.
●
●
●
●
●
High sensitivityHigh-speed frame rateFlat panel structure without image distortionScintillator: direct deposition CsIFor assembly into equipment:supplied without case (C10322D)
Features:
●
●
Cone beam CTSomatology, etc.
Applications:
VIDEO OUTPUT(13-BIT DIGITAL)Vsync, Hsync,Pclk
IntExtExtTrg
FRAMEGRABBER
MONITORPC/AT
(REAR VIEW)
C10322D
X-RAY SOURCE OBJECT
OS + IMAGE ACQUISITIONSOFTWARE
VOLTAGE SOURCE[A.vdd, D.vdd]
Connection example (C10322D)
BSM Meeting (Liège / Belgium)16.11. 2007
Carrefour Pathologique (Paris / France)19.11. - 23.11. 2007
XVIII ISDP SYMPOSIUM (Paris / France)15.11. - 17.11. 2007
Collaboration) 1394 networks being studied inJapan, the US and France, etc. MOST net-works utilize ring topology that features easyconnection between nodes, an easily expand-
able network, and few cables. AMI-C networkson the other hand offer high communicationspeeds, high network efficiency, and connec-tivity to IEEE 1394 devices such as iPod.
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MEDTEC (formerly MDT) (Birmingham / UK)13.02. - 14.02. 2008
2 Line-up of flat panel sensors for radiology 3 Line-up of mini-spectrometers
18 models with different spectral response, resolution, sensitivity, etc.
NEWS 2007 Vol.2NEWS 2007 Vol.2
Pixel sizePhotodiode areaNumber of active pixels
Frame rate* 1
Noise *2
SensitivityResolution *5
Dynamic range
X-ray tube voltageDigital output (Interface)Scintillator
50120(H) × 120(V)
2240(H) × 2344(V)2
110035 *3
82000
20 kVp to 80 kVp12 (RS-422 differential)CsI flipped scintillator plate
µmmm
pixels
frames/selectronsLSB/mR
line pairs/mm-
-bits
-
Parameter C9732DKC7942CK-12 C9730DK-10 Unit
5052.8(H) × 52.8 (V)1032(H) × 1032(V)
4125065 *4
105100
50120(H) × 120 (V)
2368(H) × 2340(V)1
125065 *4
105100
Less than 35 kVp (17 keV Mo source)14 (USB 2.0)
Direct deposition CsI
*1: Single operation*2: Internal trigger mode, single operation*3: At 80 kVp, without filter*4: At Mo target 30 kVp, without filter*5: Spatial frequency at CTF=5 %
N E W
(Ta=25 , Typ. unless otherwise noted)
SpecificationsFor Biochemical Applications
The C9730DK-10 and C9732DK have fine 50µm pixel pitch and directly deposited CsIscintillator onto a large formatted photodiodearray optimised to 17 keV radiation. They havea cassete shape with a carbon fiber top cover.C7942CK-12 installs CsI flipped scintillatorplate which is optimized for low absorptionmaterial radiography of less than 80 kVp energyrange.
●
●
●
High resolutionNo dead area due to seamless structureSupported by Hamamatsu DCAM-API(C9730DK-10)
Features:
Pixel sizePhotodiode area
Number of active pixels
Frame rate *1
Noise *2
Sensitivity *3
Resolution *4
Dynamic rangeX-ray energy rangeDigital output (Interface)Scintillator
µmmm
pixels
frames/s
electronsLSB/mR
line pairs/mm-
keVbits
-
Parameter C10158DKC9728DK-10 Unit
5052.8(H) × 52.8 (V)
1032(H) × 1032(V)
3
8045010
560018 Max.
14 (USB 2.0)
50118.8(H) × 118.8 (V)
2352(H) × 2352(V) 2352(H) × 528(V)
3 12
18022010
600018 Max.
14 (LVDS)Direct deposition CsI
*1: Single operation*2: Internal trigger mode, single operation*3: At Mo target 25 kVp, without filter*4: Spatial frequency at CTF=5 %
N E W
Whole scanPartial scanWhole scanPartial scan
(Ta=25 , Typ. unless otherwise noted)
SpecificationsFor Diffraction
These flat panel sensors feature a low noiseand direct deposition CsI scintillator for appli-cations where diffraction is critical.
●
●
●
●
Active pixel sensorLow noisePartial scan and whole scan selectable(C10158DK)Supported by Hamamatsu DCAM-API(C9728DK-10)
Features:
High sensitivity
Wide dynamic range
High resolution
Type No. Built-inimage sensor
Spectral response range (nm)1200 1400 1600 1800 2000 22001000800600400200
C10083CA
C10083MD
C9405CA
C9405MC
C9406GC
Back-thinnedCCD image sensor
NMOS linearimage sensor
C10082MD
C10083CAH
CMOS linearimage sensor
C9913GC
C9914GB
InGaAs linearimage sensor
C9404CA
C9404MC200 to 400
500 to 1100
200 to 800
320 to 1000
900 to 1700
1100 to 2200
SpectralresolutionMax. (nm)
C10082CAH
C10082CA
Features
3
5(λ=550 to 900 nm)
8
High sensitivity
Wide dynamic range
Back-thinnedCCD image sensor
CMOS linearimage sensor
7
8
CMOS linearimage sensor
Back-thinnedCCD image sensor
Back-thinnedCCD image sensor
Non-cooled type
seires M
Tseires
GT
High resolution1 *
6
1 *(λ=320 to 900 nm)
* Typical
C9404CAH 1 *
5(λ=550 to 1100 nm)
8(λ=320 to 900 nm)
C9407MA 9CMOS linearimage sensor
seires C
RC9408MAN E W
640 to 10508
IR enhancedCMOS linearimage sensor
High sensitivity
High resolution
Wide dynamic range
High sensitivity
Wide dynamic range
Low noise(Cooled type)
Small packageLow cost
Type No.Built-in
image sensor
Spectral response range (nm)1200 1400 1600 1800 2000 22001000800600400200
SpectralresolutionMax. (nm)
Features
seires C
R
C9409MA
C9410MAN E W
9CMOS linearimage sensor
8IR enhancedCMOS linearimage sensor
Small packageLow cost
OEM model
340 to 780
640 to 1050
340 to 780
N E W
N E W
Selection guideHamamatsu offers a comprehensive range ofmini-spectrometers that cover a broad spectralrange for detecting UV (from 200 nm) throughto near infrared (up to 2.2 µm) light. Our productline-up includes various mini-spectrometerswith unique features.These include compact and low-cost OEMmodels (RC series), high-sensitivity models(using back-thinned CCD image sensors) idealfor low-light-level spectrophotometry, and acooled low-noise type, so users can choosethe optimal mini-spectrometer that best meetstheir specific application.
Videomicroscopy Course (Genova / Italy)03.12. - 06.12. 2007
Electronics/EP (Stockholm / Sweden)28.01. - 30.01. 2008
IPOT (Birmingham / UK)13.02. - 14.02. 2008
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Analytica 2008 (Munich / Germany)01.04. - 04.04. 2008
NEWS 2007 Vol.2NEWS 2007 Vol.2
3 Line-up of mini-spectrometers
Mini-spectrometertype No.
Spectral resolution (nm)
5 100
1 nm Typ.
3 nm
C9404CAHC10082CAHC10083CAH
C9408MAC9410MA
C9404CAC9404MC
C9405CAC9405MC
C10082CAC10083CAC10082MDC10083MD
6 nm to 8 nm
5 nm
C9406GCC9913GCC9914GB
7 nm to 8 nm
8 nmN E W
N E W
C9407MAC9409MA 9 nm
Selection by spectral resolution
Measurable optical powerOutput comparison (relative value)
Feature
Back-thinned CCD image sensor CMOS linear image sensor
High sensitivityIdeal for low-light-level spectrophotometer(fluorescence measurement, etc.)
Suitable for environments with relatively high light intensity(Spectrum measurement of light sources and absorbancemeasurement, etc.)
TypeC9404CA, C9405CA
C10082CA, C10083CAC9404MC, C10082MD, C10083MD
High resolution: 1 nm
C9404CAHC10082CAH, C10083CAH
10-15 10-13 10-11 10-9 10-7
LIGHT POWER * (W)
C10082CA (CCD TYPE)
* Light power incident on mini-spectrometer through slit( =500 nm, integration time: 10 to 10000 ms)
C10082MD (CMOS TYPE)
* A/D count when constant light level enters fiber.
WAVELENGTH (nm)
RE
LAT
IVE
SE
NS
ITIV
ITY
*
200 300 400 500 600 700 800 90010-5
10-4
10-3
10-2
10-1
100
101
1000
(Typ. Ta=25 )
C10083CA(Slit width 70 m, Optical NA 0.22)C10082CA(Slit width 70 m, Optical NA 0.22)C10083CAH(Slit width 10 m, Optical NA 0.11)C10082CAH(Slit width 10 m, Optical NA 0.11)C10083MDC10082MD
Mini-spectrometer integrating back-thinned CCD image sensor and CMOS linear image sensor
WAVELENGTH (nm)
SP
EC
TR
AL
RE
SO
LUT
ION
(nm
)
200 300 400 500 600 700 800 900 1000
8
7
6
5
4
3
2
1
0
C10083CA (Slit width 70 µm, Optical NA 0.22)C10082CA (Slit width 70 µm, Optical NA 0.22)C9404CA (Slit width 140 µm, Optical NA 0.11)C10083CAH (Slit width 10 µm, Optical NA 0.11)C10082CAH (Slit width 10 µm, Optical NA 0.11)C9404CAH (Slit width 10 µm, Optical NA 0.11)
(Typ. Ta=25 )
Spectral response vs. wavelength
Photonics ’08 (Moscow / Russia)11.03. - 13.03. 2008
Sejem Elektronike 2008 (Ljubljana / Slovenia)18.03. - 20.03. 2008
Europtrode IX (Dublin / Ireland)30.03. - 02.04. 2008
Photon counting with Silicon APD
4 MPPC Module S10362-11 series, C10507-11 series N E W
MPPC (Multi Pixel Photon Counter)S10362-11 series
The MPPC is a new type of photon countingdevice made up of multiple APD pixels oper-ated in Geiger mode. The MPPC is essentiallyan opto-semiconductor device with excellent
photon counting capability and has manyadvantages such as low voltage operation andinsensitivity to magnetic fields.
●
●
●
●
●
●
●
●
Excellent photon counting capability(Excellent detection efficiency versus numberof incident photons)Room temperature operationLow bias (below 100 V) operationHigh gain: 105 to 106
Insensitive to magnetic fieldsExcellent time resolutionSmall sizeSimple readout circuit operation
Features:
50 m PITCH 400 PIXELS
100 m PITCH 100 PIXELS
25 m PITCH 1600 PIXELS
PETHEP calorimeter
Fluorescence measurementNeutrino detection
WIDE NARROWDYNAMIC RANGE
HIGH(to 90 %)
LOW(10 to 40 %)
FILL FACTOR
Application examples
)%(
YC
NEI
CIF
FE
NOI
TC
ET
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NO
TO
HP
WAVELENGTH (nm)
0
10
20
30
40
50
60
70
200 300 400 500 600 700 800 900 1000
(Ta=25 C)
S10362-11-025U
S10362-11-050U
S10362-11-100U
Spectral response example
8
TIME
7
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P F
O R
EB
MU
N
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5
4
3
2
1
Pulse waveform when using a linearamplifier (120 times)
Parameter Symbol
Chip sizeEffective active areaNumber of pixelsPixel sizeFill factor *1
Spectral response rangePeak sensitivity wavelengthQuantum efficiency (λ=λp)Photon detection efficiency *2 (λ=λp)Operating voltageDark countTerminal capacitanceTime resolution (FWHM)Temperature coefficient of reverse biasGain
*1: Ratio of the active area of a pixel to the entire area of the pixel., *2: Photon detection efficiency includes crosstalk and afterpulses.*3: For the recommended operating voltage of each product, refer to the data attached to each product.Note: The last letter of each type number indicates package materials (U: metal, C: ceramic).
S10362-11 series-025U, -025C -050U, -050C -100U, -100C
1.5 1.51 1
1600 400 10025 25 50 50 100 100
30.8 61.5 78.5
40070 Min.
25 50 6570 10 *3
100 270 40035
250 220 25050
2.75 105 7.5 105 2.4 106
-----λ
λpQE
PDE--
Ct--M
270 to 900
Unit
mmmm
- m%nmnm%%V
kcpspFps
mV/ C-
Specifications (Ta=25°C)
(S10362-11-050U, M=7.5 x 105)
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NEWS 2007 Vol.2NEWS 2007 Vol.2
New version of sealed 100 kV microfocus x-ray source
6 Micro Focus X-Ray Source
The new L10321 is a sealed 100 kV x-raysource providing a wide and homogenousbeam angle of 118 degrees. This wide conebeam combined with an advanced FOD (Focusto Object Distance) of only 7.3 mm enables ahighly magnified oblique view without tiltingthe sample.
In addition an excellent stability of spot sizeand position as well as a homogenous andstable intensity profile makes the L10321 anoptimum tool for 3D x-ray CT and Lamino-graphy systems.
The L10321 is a stand alone unit and it can beeasily integrated into a system or can also be
Author: Stefan Kappelsberger Hamamatsu Photonics Germany
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Wide x-ray beam angle: 118°Short FOD (Focus to Object Distance): 7.3 mmFocal spot size: 5 µm (at 4 W)
Features:
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X-ray CT systemsX-ray Laminography systemsNon-destructive inspection systems (in-line/off-line)Applicable Objects- Electronic components- Printed circuit boards- Metal and plastic components
Applications:
operated under laboratory conditions. Noadditional control unit or high voltage powersupply is required since the mono block designof the source already includes all parts. Thesource is operated by 24 Volts DC and con-trolled via RS232C.
Parameter L10321 Unit
Tube voltage range 20 to 100 kVTube current range 10 to 200 µAMaximum output 20 WFocal spot size 5 (4 W) / 30 (20 W) µmFOD 7.3 mmBeam angle 118 degrees
Specifications
50 um IC Bumps BGA Connection
Automaticon 2008 (Warsaw / Poland)01.04. - 04.04. 2008
PHOTONICS EUROPE (Strasbourg / France)08.04. - 10.04. 2008
Expo Electronica ’08 (Moscow / Russia)25.04. - 28.04. 2008
MPPC Module
5 MPPC Module C10507-11 Series N E W
The MPPC module is a photon counting mod-ule capable of low-light-level detection. Themodule consists of an MPPC device, current-to-voltage converter circuit, high-speed com-parator circuit, high-voltage power supply
circuit, temperature-compensation circuit,counter circuit, and microcomputer.The module also has a USB 1.1 port for con-necting to a PC. The threshold level (detectionlevel for one photon) can be changed from a
PC. The MPPC module is designed to extractmaximum MPPC performance and so yieldsexcellent photon counting characteristics
●
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●
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Integrates a signal readout circuit ideal forMPPCBuilt-in high-voltage circuit and temperature-compensated circuitThree types of output: analog, comparatorand pulse calculated valueUSB interface for easy handlingDriven by USB bus power(no external power supply required)Compact and lightweight
Features:
OSCILLOSCOPE
FREQUENCY COUNTER
PC(with supplied software
installed)
MPPC MODULEC10507-11 SERIES
LIGHTSOURCE
PHOTON
OBJECT
USB CABLE(accessory ofMPPC module)
COMPARATOROUTPUT
ANALOG OUTPUT
Connection example
ParameterInternal MPPCEffective active areaNumber of pixelsPeak sensitivity wavelengthAnalog output voltageDark countPhoton detection efficiencyTemperature stability of analogoutput voltage
Comparator threshold level
Interface
Condition C10507-11-025U C10507-11-050US10362-11-025U S10362-11-050U
1 11600 400
400100
150 40025 50
2.5
Adjustable 5 states(0.5, 1.5, 2.5, 3.5, Disable)
USB1.1
0.5 p.e.λ=400 nm
25 10 C
Unit-
mm-
nmmV/p.e.kcps
%
%
-
-
(Ta=25 C)
Specifications (Ta=25°C)
MPPC
TEMPERATURESENSOR
VOLTAGECONTROLLER
CURRENT-TO-VOLTAGECONVERSION AMP
HIGH-VOLTAGEGENERATOR
MICROCOMPUTER
COMPARATOR
ANALOG OUTPUT DIGITAL OUTPUT
COUNTER
USBINTERFACE
MPPC MODULE
Block diagram
Comparator output
TIME (4 ns/div.)
1 p. e.
2 p. e.
Analog output (C10507-11-050U)
Measurement examples
TTL compatible
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Optatec (Frankfurt / Germany)17.06. - 20.06. 2008
Microscience 2008 (London / UK)23.06. - 26.06. 2008
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Detectors for Non-Destructive X-ray Inspection
Traditionally “radiography films” have beenused to detect x-rays and, by means of spe-cial chemical agents, created images for diag-nostic purposes.
Recently, the use of new electronic technolo-gies are replacing this traditional method, asthey have become more affordable and tech-nically are an effective technology for visuali-zation, recording and image transfer.
More recently, a radically innovative technol-ogy, Linear and Matrix x-ray detectors, havebecome a reality in the image processing field.
Hamamatsu Photonics has expanded its pro-duct line to offer a complete series of devicesfor multiple applications in the field of Non-Destructive Testing based on x-ray detectionand imaging (fig 1).
The new x-ray Line Scan Cameras, C10400and C9750 series, can take a high sensitivity,high resolution transparent x-ray image of aninspected object transported on a belt con-veyor or similar apparatus using a simple sys-tem configuration as reported in fig 2.
7 In-line Inspection System in Electronic Field
In addition, Hamamatsu line-scan cameras canbe supplied in different sizes and resolution(down to 0.2 mm pixel pitch) and can matchdifferent inspection line conveyor speeds asreported in table 1 below.
Today, many products must be inspected dur-ing their production or at the final packingstage and this can be performed by on-linex-ray inspection. The products exposed to x-rays are moved over a linear sensor via a con-veyor belt and the resulting images are pro-cessed in real-time and the defective productsare rejected.
Since the internal structure of an object, whichis not visible to the naked eye, can be inspect-ed without contact or damage. These linearcameras are suitable for broad interior x-rayobservation and the detection of contaminantsor defects in electronic components.
X-ray inspection provides grayscale imagesthat represent variances in the shape andthickness of an object. High-density featuresproduce a darker image than those of lesserdensity; it is possible to quantitatively measurethese features and develop correlation betweenacceptable or unacceptable manufacturingprocess conditions.
Measurement data is accumulated to evaluateand determine the pass and fail status ofinspected assemblies based on customer pre-defined needs and criteria.
X-ray inspection can reveal a number ofdefects, including open or shorted solder joints,lifted leads, component mis-registration, chiptombstoning and many more.
The following are reported x-ray inspectionexamples images for IC bonding wires (Fig.3,Fig.4, Fig.5).
However, automated industrial x-ray inspec-tion systems operate in-line with PCB assem-bly manufacturing equipment.
In-line operation provides real-time monitoringof critical manufacturing variables. By accu-mulating the detailed measurement data forseveral of the same assemblies, variations inthe manufacturing process can be identifiedand corrected using statistical process controlbefore out-of-tolerance conditions are able tocause defects.
The main function of similar equipment is todetect and measure any possible assemblyand lamination errors of multi-layered panels,for the relevant drilling of two or more optimizedholes that are a reliable reference for the drillingprocess.
Hamamatsu’s micro-focus x-ray source (MFX)and x-ray line scan camera allow easy integra-tion of a digital x-ray inspection system into anexisting processing line in which high-resolu-tion (in the micrometer range) has become awidely used tool for non-destructive failureanalysis and process control.
fig. 4 fig. 5fig. 3
fig. 6
fig. 1
fig. 2
table 1
Hamamatsu also offers a comprehensive rangeof x-ray flat panel sensors.
Please contact your local sales office for moredetails on any of our products or to discuss asolution for your OEM requirements.
Author: Alberto Verga Hamamatsu Photonics Italy
BIAS 2008 (Milano / Italy)27.05. - 30.05. 2008
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9 R7458/R7248/R7818 series
New Solar Blind Ruggedized PMTs
Hamamatsu introduces a new range of solarblind ruggedized Photomultiplier Tubes, theR7458, R7248 and R7818 series.
Incorporating newly developed photocathodesand assembly techniques, they offer high UVsensitivity and high vibration resistance.
The new CsTe photocathode offers a distinctimprovement in quantum efficiency in the UV,compared to other ruggedized devices, with14% QE at 254 nm. The new photocathodematerial gives a high spectral response from160 to 320 nm, peak response at 240 nm.The glass window is fused silica and sapphire,ensuring high transmission in the UV.
They are available in 18, 28 and 35 mm dia-meter and our improved assembly techniquesensure a ruggedized and low profile structure.PMTs are vibration tested to 300 m/s2 for the18 and 28 mm diameter tubes and 80 m/s2 forthe 35 mm diameter tube.
These new photomultipliers are well suited toa wide range of applications where UV sensi-tivity is required in harsh environmental con-ditions. The aerospace industry in particularhas driven demand for this device, where arugged device with good vibration resistanceis essential.
New High Voltage Power Supply Unit Series
8 C9619 series
Hamamatsu introduces the new C9619 seriescompact high voltage power supplies specif-ically designed for simple and reliable photo-multiplier tube operation.
Since the output of a photomultiplier tube isextremely sensitive to variations in the supplyvoltage, the power supply stability such asdrift, ripple, load regulation and input regula-tion should be at least ten times as stable asthe output stability required of the photomul-tiplier tube. The C9619 series are the productsdesigned to conform to such stability require-ments demanded of photomultiplier tubeoperations.
In addition, the series provides enhancedprotective functions against reversed powerinput, excessive and reversed controlling volt-age input, continuous overloading and shortcircuit output.
Author: Andrey Makarets Hamamatsu Photonics Norden
●
●
●
●
●
Compact and light weightHigh stabilityHigh output power (2 kV, 2 mA)Completed fail-safe functionsMetal shielded case
Features:
● High voltage power supply for photomulti-plier tubes
Application:
The light weight and compact design of C9619series units allows direct mounting on a PCboard, while metal-shielded package provideseffective noise shielding.
The new power supply units feature high out-put voltage up to 2 kV and max. output current2 mA. The high voltage can be easily con-trolled by means of either external poten-tiometer or external low voltage 0 V to +5 Vapplied, allowing wide range of high voltageadjustments with fast response.
The C9619 and the C9619-01 are intendedfor negative output, while the C9619-50 andC9619-51 have positive output. You canselect a model to meet your specific applica-tion needs.
Solar Blind Image Intensifier
10 V4435U-03
The V4435U-03 proximity focused image inten-sifier has been designed for UV imaging appli-cations. It has a Cs-Te photocathode and isvery sensitive in the UV region from 160 to320 nm with high attenuation in the visiblerange. Low noise and no distortion are addi-tional features of proximity type configuration.The 2-stage microchannel plate of the inten-sifier enables high gain operation, as requiredfor single photon imaging applications inobservation, industrial and scientific applica-tions.
●
●
●
Solar blind responseHigh Gain High quantum efficiency
Features:
●
●
●
Corona Discharge ObservationFlare sensingLow light level detection in the UV region
Applications:
Spectral response
Author: Roland Lefebvre Hamamtsu Photonics France
Author: Hubert Ortner Hamamatsu Photonics Germany
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11 UVtron
Line-up UVtrons
In 1988, parts of the old city of Lisbon hadbeen destroyed by fire and in 1996, 17 peopledied when the airport in Düsseldorf caught fire.These are just a couple of examples where firecatastrophes have destroyed many lives.
Recently, more and more efforts have beenmade to prevent fire. The most important thingis to detect the fire in time by using an effec-tive fire alarm system.
Gas burners have the opposite problem. Iftheir fire is extinguished gas streams out andthen the smallest spark can ignite and causean explosion.
UVtrons today remain the most sensitive sen-sor available for flame detection. There have
UV Sensitive PhotonCounting Heads
Our series of Photon Counting Heads hasbeen expanded to cover the spectral responserange from 160 to 320 nm. These new mod-ules offer an ideal solution to your detectorrequirements for emission spectroscopy andUV spectrometers.
Each head is compact and lightweight andincorporates a photomultiplier tube (PMT) withhigh voltage power supply and high-speedphoton counting circuit. The electronics arefactory-set to optimum levels thus eliminatingthe need to make time-consuming adjust-ments.
The H7828-09 is built around a 19 mm diam-eter head-on PMT, whilst the H8259-09 incor-porates a 28 mm diameter side-window PMT.The H8259-09 also features an electronic gatecircuit to eliminate excess excitation light,therefore protecting the PMT from over-expo-sure and ensuring accurate measurements atlow light levels.
been many efforts to replace them with semi-conductor devices, but none could reach theirsensitivity. They can detect a smoker, who triesto light his cigarette, from a distance of 5meters, even in full sunlight.
Hamamatsu UVtrons have been successfullyused for many years, in fire alarm systems andburner controllers.
We have a broad choice of models to choosefrom. The popular R2868, the new R9454ruggedized version and the latest high sensi-tivity type R9533.
●
●
●
●
●
●
Capable of detecting very weak ultravioletrays (from 1 pW)Insensitive to visible and Infrared Light(Solar Blind Characteristics)High reliability and long service life (10.000hours of continual discharge operation)High speed response (a few milliseconds)Low current operationCompact and lightweight
Features:
●
●
●
●
●
●
Combustion monitoring apparatus for gasand oil burnerFire alarm apparatusArson watch monitorsPhotoelectronic counterDetection of ultraviolet ray leakageDetection of discharge phenomenon
Applications:
Type Voltage Sensitivity Size Specialities Application
R244 HV Std fire alarm R259 LV Std fire alarm R1723-01 LV High sensitivity fire alarm R2868 LV small low cost, best seller! fire alarm R9454 small shock resistant, low cost, new! fire alarm R9533 LV shock resistant, new! fire alarm R259-01 LV Std burner controlR1868 LV, high current burner controlR2121 HV, high current burner control
FLAME SENSOR UVtron
Parameter H7828-09 H8259-09
Input Voltage +4.5 to +5.5VSpectral Response 160 to 320 nmEffective Area 15 mm 4 x 20 mmTypical Dark Count 10 cps 10 cpsGate Repetition Rate - 10 kHzPulse-Pair Resolution 70 ns 35 ns
Specifications
Accessories
Signal Processing circuitC3704The C3704 contains the complete circuitfor operating the UVtrons. Simply connectthe UVtron and a 9 V block battery andthis makes a complete UV alarm system.The C3704 has the high-voltage powersupply and signal processing circuit onthe same board. The C10423 is the newsignal processing circuit for the R9454.
UV-checker lampL9657Regular checks of the UVtrons are impor-tant. Hamamatsu has developed an inex-pensive UV test lamp, which radiates onlyin the UV range, making current consump-tion very low. In pulse mode it has a lifeexpectancy of 20 years.
Author: Jenny Brown Hamamatsu Photonics UK
Gated Photomultiplier Tube Module
When excitation light, such as that from a laseror xenon flash lamp, enters a photomultipliertube, the signal processing circuit may becomesaturated causing adverse effects on themeasurement. Mechanical shutter methodshave problems such as limited speed andservice life.
The H10304 PMT module has electronic gat-ing, which is controlled by changing the electri-cal potential on a dynode in the photomulti-plier tube and features high speed and highextinction ratio.
The combination of built-in metal packagePMT and gated circuit provides excellent char-acteristics of 100 ns minimum gate width and100 kHz repetition rate in a compact and light-weight package.
If excessive light level enters the module, anerror signal is displayed thanks to the internalprotection monitor.
13 H1030412 H7828-09, H8259-09
There are two modes of gating: a ‘normally-off’that turns on the gate of the PMT modulewhen a gate signal is input and a ‘normally-on’mode, which has the reverse effect.
A pulse generator C10149 (optional) is alsoprovided for gating the H10304.
Author: Dieter Habben Hamamatsu Photonics Germany
Author: Wilfried Vogel Hamamatsu Photonics France
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16 LCOS-SLM X10468 series
Spatial light modulation with LCOS-SLM X10468 series
Control your light !Shape your beam !Improve your image !
Our new LCOS-SLM devices are Spatial LightModulators (SLMs) with pure phase modula-tion based on Liquid Crystal on Silicon (LCOS)technology. The liquid crystal (LC) is controlledby a direct and accurate voltage and can mod-ulate the wavefront of a light beam.The LCOS devices are carefully designed toachieve high light utilization efficiency fromvarious points of view such as high reflectivity,high aperture ratio and low diffraction noisedue to the fixel structure (fig. 1).The X10468 series can be controlled via a PCusing the Digital Video Interface (DVI), whichis a standard interface for computer displays.The distortions in the LCOS chip, such aswavefront distortion and nonlinear responseof the LC, are efficiently compensated by thecontroller.Easy computer control, precise linear phasemodulation (fig. 2) characteristics can beaccomplished by the X10468 series LCOS-SLM.
We offer the LCOS series we offer for 4 dif-ferent wavelength ranges within 355 nm to1550 nm.On request we can meet your special wave-length requirements for your application.The LCOS-SLM is also available as an OEMdevice for systems integrators.The new LCOS-SLM is suitable for a widerange of applications.
Using the LCOS-SLM we succeeded in the0th order suppression technique (fig. 3).
fig. 1
New Detector for TOF-MS
The F9892-11 and -12 microchannel plateassemblies are our newest detectors for timeof flight mass spectrometry.Although offering 40 mm diameter of effectivearea, the flatness varies only in the +/-10 µmrange.Time resolution of 1.2 ns (FWHM) with 3%ringing (typ.) is achievable.The v-stack assembly gives 1x10^6 gain at2 kV and can be operated floating at max +/-10 kV supply voltage.
15 F9892-11/-12
Author: Siegfried Schmid Hamamatsu Photonics Germany
●
●
●
●
●
Diameter of effective area 40 mmTime response 1.2 ns (FWHM)MCP flatness typ. +/-10 µmRinging typ 3%Time jitter 1.4 ns for F9892-11
Features:
● Time of flight mass spectrometry
Application:
R10454 Photomultiplier Tube
Hamamatsu is pleased to introduce the newR10454 photomultiplier tube.
It has a Cs-I photocathode and MgF2 windowfor vacuum ultraviolet detection.Furthermore, the new R10454 has improvedsolar blind characteristics when comparedto the R8487 conventional type. The R10454features spectral response with a sharp solar-blind cut-off, high sensitivity in the VUV regionand low dark current.
14 R10454
Author: Rosa Ruiz Hamamatsu Photonics Spain
Parameter NEW R10454 Conventional type R8487 UNIT
Spectral Response 115 to 195 115 to 195 nmCathode Radiant Sensitivity at 121 nm 25.5 25.5 mA / WAnode Radiant Sensitivity at 121 nm 1.0 EXP+05 1.0 EXP+05 A/WDark Current 0.1 0.1 nAAnode Sensitivity Ratio 121 nm / 200 nm 2800 500 -Anode Sensitivity Ratio 121 nm / 250 nm 5500 1200 -Anode Sensitivity Ratio 121 nm / 300 nm 8500 1600 -
●
●
●
●
●
●
Wavefront correctionPulse shapingBeam forming and steeringLaser processingOptical manipulationOptical testing
Applications:
fig. 3
fig. 2
fig. 3Author: Ludwig Schleinkofer Hamamatsu Photonics Germany
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Lock-in Thermography
The THEMOS series of thermal imaging sys-tems for IC failure analysis have now beenexpanded with a thermal lock-in option.
Lock-in thermography is a relatively newmethod that extends the detection limit of ther-mal imaging systems towards the µW range.The IC device under evaluation is modulatedin supply current synchronized to the highspeed readout of the thermal camera.Utilising modulated lock-in operation, the sys-tem noise is averaged, resulting in a greaterdetection threshold.
The lock-in option consists of a lock-in signalgenerator and a software extension for theTHEMOS system. All image acquisition param-eters, such as lock-in frequency, acquisitiontime and signal processing parameters aresoftware controlled.
17 THEMOS Series
●
●
●
Imaging of weak thermal sources (µW range power dissipation)Visual display of amplitude and phase imageDisplay of heat propagation
Features:
●
●
●
IC failure analysisDetection and localisation of shorts andleakagesThermal analysis analysis on packageddevices
Applications:
Each acquisition results in an amplitude andphase image. An option to acquire and displaya sequence of images, representing thermalsignal propagation, is also available.
The lock-in option is available for the THEMOS1000 and the compact THEMOS mini. (seeNews 1/2007)
New Luminescence Plate Reader
Many biological applications and especiallydrug discovery, involve the use of microplates.Thanks to miniaturization, the need to usesmaller volumes and easier sample prepara-tions, these microplates have been used moreextensively. Following this, a novel lumines-cence plate reader has been developed forhigh throughput screening of large compoundlibraries, using 96, 384, and 1536 well plateformats.
The FDSS/RayCatcher uses a 2D photoncounting sensor, with improved sensitivity,especially in red wavelengths, from 350 nm to720 nm. The image intensifier of the sensoris equipped with a special cooling unit (-30°C)and direct fibre optics to achieve ultra sensi-tive signal detection. As the sensor collectslight from all the wells of the plate simultane-
18 FDSS/RayCatcher
●
●
●
●
●
Ultra-sensitive 2D photon counting sensor,direct fibre opticsHigh Throughput20 plate-stackers (in and out), removableOptions: microplate lid-remover, temperature control, barcode readerRobotics compatible
Features:
●
●
●
End-point applications: - cell proliferation assays- receptor binding assaysKinetic applications:- kinase assays- phagocytosisTime-lapse applications:- gene expression- circadian rhythm
Applications:
ously, high throughput can be achieved, witha measurement time that can reach less than1 min (including loading in and out).
One of the key features of the FDSS/RayCatcher is microplate-format versatility,from 96 to 1536 well plates. Several optionsalso enable complete automation of this easyto use system.
A wide range of applications can be performedon the RayCatcher. Flash and glow lumines-cent assays, radioisotope assays and geneexpression (luciferase assays) can all be car-ried out with the same instrument.
Author: Quynh-Nhu Trinh-Xuan Hamamatsu Photonics France
Spectral response
Author: Bertram Lohmüller Hamamatsu Photonics Germany
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A New Step for Failure and Debug Analysis in CMOS Technologies
In 2005, an excellent article was presentedduring the 31st International Symposium forTesting and Failure Analysis (ISTFA), San Jose,California. (1).
This paper, written by Crolles 2 Alliance teamsin collaboration with Hamamatsu Photonics,was on the subject of ‘Effectiveness ofOBIRCH-based Fault Isolation for Sub-90 nmCMOS Technologies’.
OBIRCH is the Optical Beam InducedResistance Change Method. The purpose ofthe paper was not to review the merits of theOBIRCH method as a key technique to recovermetal related failures inside an electronic device(shorts, voids, interconnect, quasi opens,current leakage etc.). However, it is somehowimportant to remember that the OBIRCH tech-nique requires the use of an IR Laser, whichacts as a thermal stimulation on the devicesunder test (DUT).
Each scanning position of the laser over theDUT can measure the output current variation,which is then recognized as one grey level ofone pixel position of the OBIRCH image.Once the full DUT surface has been scannedby the laser, we obtain an OBIRCH image.
The purpose of this paper was to present theresults of their investigations using laser mod-ulation at well defined frequencies in conjunc-tion with an analogue lock in current amplifier.
19 PHEMOS Digital Lock-in kit M10383 for improving OBIRCH analysis
Their idea was to demonstrate how importantthe gain in the signal to noise ratio (S/N) mightbe, in order to detect faulty circuits with ahigher sensitivity and to reduce incident laserpower to prevent device damage duringanalysis.
Furthermore, a higher spatial resolution of theOBIRCH signal was expected, based on thefact that pulsed (modulated) laser alters heatdissipation kinetics.
They presented their various experiments andsuccessfully demonstrated that the OBIRCHbased fault isolation in the latest CMOS gen-eration devices can be improved using apulsed/modulated laser when combined witha lock-in amplifier.
Using appropriate settings for laser pulse fre-quency, scan speed and phase shift offset,has lead to a tenfold increase in signal tonoise ratio gain.
These results opened the door to the meritsof all applications related to pulse or modu-lated lasers in Failure Analysis and DebugCMOS technologies. Industries particularlyresearchers and scientists have naturally beenattracted to the information which could berecovered from phase signal too, related tothe time domain analysis.
We are now working towards the possibility ofgetting additional information in the Z directioninside a chip (multi-layer technologies), and inthe Time Domain, to observe transient statesof FA propagation to give key information onthe defects’ spatial origin.
There is still work that needs to be done tofulfill all these technical dreams, but we arecontinuing in the right direction, through sev-eral collaborations in Europe and with industrialpartners and research institutes in Europeand in Japan.
Since 2005, progress has been made andtoday Hamamatsu is proud to announce thefirst digital lock-in kit dedicated to FailureAnalysis. This can be retrofitted to our XMOSproduct line up (iPHEMOS , PHEMOS , THE-MOS ).
The M10383 digital lock-in kit is a new functionadded to OBIRCH analysis, to boost detec-tion sensitivity by sampling one pixel intomultiple data using lock-in processing. (seeprinciple of digital lock-in processing below).
There are two key improvements in the newfunctions:
1. Digital lock-in delivers a sharp and clear image in shorter acquisition time.
2. Motion image display is possible with digital lock-in processing based on delay information contained inside the digital lock-in signal.
The digital lock-in kit M10383 will replace theexisting A9188-01 lock-in kit in all 2008 gen-eration PHEMOS from Hamamatsu.
(1) Proceedings of the 31st InternationalSymposium for Testing and Failure Analysis –November 6-10, 2005, McEnery ConventionCenter, San Jose, California, USA“ The Effectiveness of Obirch Based FaultIsolation for Sub-90 nm CMOS Technologies
M. de la Bardonnie 1, R. Ross 2, K. Ly 2, F. Lorut 3, M. Lamy 3, C. Wyon 4, L.F.Tz. Kwakman 1
1 Philips Semiconductors, 2 FreescaleSemiconductor, 3 STMicroelectronics, 4 CEA-LETI860, Rue Jean Monnet, 38920 Crolles,France
Yasushi HIRUMAHamamatsu Photonics K.K. System Division,812 Joko Cho, Hamamatsu city, 431-3196,
Japan
Author: Jean Roux Hamamatsu Photonics France
2. Shorter acquisition time
3. Time domain analysis
1. Principle of digital lock-in processing
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tem, which uses an advanced scanning tech-nology to digitise whole pathology slides at aresolution suitable for diagnostic purposes tocreate a virtual slide which is also known asa digital slide.
Z Stack creation and viewing of VirtualSlides
A new feature is now available for theNanoZoomer which enables it to scan tissuesections at different levels to create a virtualslide which can then be viewed at differentfocal planes.
The operator can input the number of levelsto be scanned and the distance between themor, for convenience, they can be selected froma pre-set list of levels and distances.
In automatic mode, the NanoZoomer performsan autofocus on the tissue section to identifythe mid focal plane of the specimen. TheNanoZoomer then scans the number of layers(including the autofocus layer) selected by theoperator. For example: if 11 layers have beenselected, 5 layers are scanned both aboveand below the autofocus layer to give a totalof 11 layers. It is also possible to scan anunequal number of levels above and below
20 NanoZoomer Digital Pathology System (NDP)
the autofocus level. For example: if 11 layersare chosen it is possible to select 6 layers tobe scanned above the autofocus level whichmeans 4 layers would be scanned below theautofocus level. This feature can be useful forexamining virtual slides if there are subtlechanges in tissue structure in a particular focalplane range of the tissue section.
Following the creation of the multilayer virtualslide it is possible to focus back and forwardthrough it using the standard NanoZoomerviewer software by simply pressing the ctrl keyon the keyboard of the PC while scrolling themouse wheel.
Conclusion
The ability to focus up and down through dif-ferent levels in a virtual slide is a particularlyuseful feature for examining cytology speci-mens or thick histological sections and simu-lates the experience of using a conventionalmicroscope to examine these types of speci-men. Not only is it possible to focus througha virtual slide located on a local PC it is alsopossible to perform the same operation on avirtual slide located on a remote PC via anetwork connection.
NIR Video Camera Camera Controller
The new C3077-78 video CCD camera isequipped with a newly developed 2/3" frametransfer CCD sensor with high sensitivity in theNIR range. At 800 nm the quantum efficiencyis 40% and the spectral range is up to 1100nm. The standard EIA video output signal pro-vides compatibility with peripheral devicessuch as video monitors and video recorders.Utilising the Hamamatsu HiPic or WASABIsoftware and an A/D video-frame grabber,images can be stored and processed on a PC.Real-time image improvement can be realisedin combination with the new HamamatsuC2741-62 Camera Controller. The camerafeatures low readout noise and a high signalto noise ratio, which allows precise imagecapture for both industrial and scientificmeasurement applications.
21 C3077-78
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Features:
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Applications:
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Spectral range: 280 nm - 1100 nmS/N ratio: 53 dBResolution: 565 TV lines (horizontal), 320 TV lines (vertical)Lens mount: C-mountVideo standard: EIAMinimum sensitivity: 0.1 lux
Specifications:
The new C2741-62 Camera Controller fromHamamatsu can be used with most standardvideo cameras and can provide significantimage improvements such as contrastenhancement, shading correction, averaging,detail enhancement and gamma correction.The new C2741-62 can provide exceptionalimprovements of the image quality. Easy tooperate, front panel controls allow fast andreal-time applications without the need of anexternal computer. The camera controller isideal for the use in laboratories or as a robuststand-alone solution in an industrial environ-ment.
22 C2741-62
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Clear and emphasised output image of CCDvideo camera Easy operationContrast enhancementDetail enhancementAveragingShading correction
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Video microscopyIR-Reflectography (with IR-video cameras)Video surveillancePart detectionOn-line process control
Applications:
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Video synchronisation system: EIA or CCIR (selectable by software)Interlace: 2:1Aspect ratio: 4:3 (H:V)Input signal: Composite video signal, 1 V p-p / 75 Ohm (at BNC or 12 pin)Operating voltage: AC 100 V - 240 V, 50 Hz/60 HzRS232 interface
Specifications:
TDI Cameras offer Sensitivity and Line Rate Breakthrough
Hamamatsu Photonics has expanded theirrange of TDI (time delay integration) cameras.With TDI, each line of the sensor is synchro-nised with the movement of an object in sucha way that as the image moves from one lineto the next, the integrated charge transfersalong with it. This means higher sensitivity canbe achieved compared to single line scancameras. Alternatively, it allows you to increaseline frame rate in direct proportion to the num-ber of rows, whilst maintaining sensitivity.
Furthermore, our TDI cameras utilise “back-thinned” technology. This provides 90% peakquantum efficiency and direct UV sensitivity.This is around double (at peak wavelength)and about 8 x (in the UV) compared to somefront-illuminated CCDs.
The line up now includes C10000-301 with1024 pixel x 128 pixel and C10000-401 with2048 pixel x 128 pixel, housed for easy han-dling. Both cameras offer selectable 12/8-bitA-D convertor and bi-directional scanning,with line rates up to 50 kHz.
23 C10000-301, -401
Since the sensor itself is also manufacturedby Hamamatsu, availability, cost effectivenessand technical support can be assured. It alsomeans the range of cameras will increase inthe future, as we complete development ofsensors with different pixel numbers. Pleasecontact us, should you have a specific require-ment.
The features of the C10000 series make themideal for applications in low light level andhigh-speed industrial inspection, particularlywhere UV and NIR sensitivity are required.The cameras offer the optimum solution forthe inspection of high volume products suchas flat panel and LCD displays, web inspec-tion, electronics and PC-board inspection andbiomedical instrumentation.
Author: Craige Palmer Hamamatsu Photonics UK
Author: Paul Cormack Hamamatsu Photonics UK
Author: Bertram Lohmüller Hamamatsu Photonics Germany
Author: Bertram Lohmüller Hamamatsu Photonics Germany
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NEWS 2007 Vol.2NEWS 2007 Vol.2
Femtosecond Streak Camera with Optical Switch for Ultrafast FEL Diagnostics
Third generation synchrotron light sources canprovide photons with extraordinary flux andbrilliance from the Ultra Violet to the x-rayregion. The Free Electron Laser (FEL) is gen-erally considered as the next step forward inthe evolution of light sources based on elec-tron beams. Photon pulses produced by FELsfeature higher intensity, better coherence andtemporal structure than synchrotron lightsources can provide. Research and develop-ment programs have been started and partiallyfinanced in the USA, Germany, Japan andItaly for the construction of FEL based x-raysources.FERMI is a research and development projectfor the construction of a fourth generation FELlight source from the Vacuum Ultra-Violet (VUV)to the x-ray region.The high brightness electron beam of FERMIwill be produced by a photoinjector whichplays a crucial role for the performance of the
24 C6138S FESCA200 Streak Camera w/Optical Switch
seeded FERMI@elettra FEL. Optimisation ofthe photoinjector is possible only with anextensive characterisation of the 5 MeV elec-tron beam longitudinal and transverse phasespace.
The photoinjector diagnostics system includesinterceptive instrumentation as screens fortransverse measurements whereas a Cherenkovradiator, coupled to the FESCA200 streakcamera, provides an accurate reconstructionof the longitudinal profile. The expected bunchlength of 6 to 10 ps is measured with <200 fsresolution. The longitudinal profile is obtainedby illuminating the input slit of the streak cam-era with the Cherenkov radiation produced bythe beam in an aerogel cell.The Hamamatsu FESCA 200 Streak Camera(Figure 1) has been recently delivered andcommissioned at ELETTRA (June, 4th to 8th).It is a UV enhanced unit with MgF2 input win-
dow (down to 115 nm), equipped also withreflective input optics (to avoid chromatic aber-rations) and flange coupling for direct in-vacu-um measurements. Both electrical and opticaltrigger input options are available.During the commissioning of the FESCA200for FERMI@elettra a fs Ti: Sa laser oscillator +amplifier set-up has been used as a testsource.
Hamamatsu Fesca200 Femtosecond StreakCamera is the state-of-the-art of commercialinstruments for ultrafast light event inspectionsince it offers an excellent time resolution forreal time temporal characterisation of lightpulses. High intensity lasers give a number ofphotons per pulse that is high enough for singleshot measurements. The FESCA installed atFERMI and SPARC (INFN LNF) showes a verygood temporal resolution @ single shot oper-ation of less than 200fs FWHM (see Figure 2).
If accumulation is required in order to improvethe dynamic and s/n ratio, the trigger jitter hasto be considered. Standard repetitive singleshot trigger electronics brings a jitter of lessthan ±20 ps.In order to keep sub-ps time resolution inaccumulation mode, a different sweep circuithas been applied to 50 ps to 100 ps streakcamera time range: an optical switch (Figure 3)is used lowering the jitter to outstanding level(down to 220 fs). The following data show theresult of the optical switch @50 ps time rangewithout and with jitter software correction(Figure 4).
Authors: Laura Confalonieri, Hamamatsu PhotonicsItaly; Mario Ferianis, ELETTRA and FERMI;Francesco Giovenale, Hamamatsu Photonics Italy
Fesca200 Optical Switch sweep circuit
Figure 3
Single shot acquisition of fs laser pulse FWHM = 175fs
Figure 2Figure 1: The FESCA 200 installed at ELETTRA for the commissioning
Results of optical switch withauch/with jitter software correction
Figure 4
Single Shot About FWHM 400 fs @50ps time range
Jitter correction About FWHM 600 fs @50ps time range
Jitter = ( 9002 – 4002 ) 1/2 = + / - 400 fs
Jitter = ( 6002 – 4002 ) 1/2 = + / - 220 fs
Average 100shots About FWHM 900 fs @50ps time range
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Spectroscopy of Combustion Flame from Diesel and Gas Engines
The development of ultra-low emission com-bustion for diesel and gas engines requires theuse of new investigation tools. At Wissen-schaftlich-Technisches Zentrum (WTZ) RoßlaugGmbH therefore a measuring device for thetime-resolved spectral analysis of combustionflames was developed, which is relatively eco-nomically priced, easy to handle and readilyadapted to practical conditions on the engine.
Figure 1 shows the optical arrangement of themeasuring device.
25 Application Report
The measuring device is a commercially avail-able grating spectrometer with a focal lengthof 120 mm. The coupling of the flame radia-tion from the engine occurs via a quartz opti-cal fibre, which is formed as an inlet slit onthe spectrometer side. In the focal plane ofthe spectrometer, a Hamamatsu 16-channellinear array multianode photomultiplier tubeR5900U-03L16, with the associated voltagedivider tube socket E6736 is accommodatedin a light-proof housing. An adjustable highvoltage supply, the Hamamatsu modelC4900-01, is used. A 16-channel current-volt-
age converter was built for signalconditioning. The registration of thetime depending signals takes placein a fast 16-channel data recordingsystem.
The chosen configuration allows cap-turing the time progress of the flameradiation during the combustion pro-cess in 16 spectral channels parallelwith a scanning rate of approximate20 kHz (0.5 °CA at an engine speedof 1500 rpm). The optical grating inthe spectrometer was selected toyield a spectral bandwidth per pho-tomultiplier channel of 5 nm. Thespectral range that can be detectedsimultaneously with the 16 channelsis then approximately 100 nm. Withhelp of the grating adjustment, thedetectable spectral range can befreely selected within the total avail-able spectral range of 250 to 600 nm.
A spectral lamp, which emits the known mer-cury lines, was used for the wavelength cali-bration of the spectral measuring device. Usinga calibration process on the basis of regres-sion calculation, functional interdependenciesbetween grating position, channel number andwavelength could be ascertained. The wave-length accuracy is approximately 2 nm. Apartfrom the flame radiation, the output signal ofeach photomultiplier channel is determined bythe spectral transmission of the optical com-ponents of the measuring device, the spectralsensitivity of the photocathode and the anodesensitivity. To achieve defined relationshipshere, a response adjusting of the total measur-ing device regarding the spectral radiation dis-tribution of a tungsten band lamp with a bandtemperature of 2700 K was conducted. Thisalso corresponds approximately to the con-tinuum radiation of soot emitted during theengine combustion.
Extensive studies to diesel and gas engineswere conducted with the developed spectralmeasuring device. Figures 2 and 3 show someexample measuring results. Two grating set-tings were required for the spectral range of300 to 475 nm shown here. The two partialspectra with 16 spectral channels each werecaptured in sequence and then compiled to atotal spectrum with the help of evaluation soft-ware. The recording of the flame signal wasdone synchronous to the crank angle withincrements of 1 °CA. To obtain representativeflame signal curves, 200 combustion cycleswere averaged.
For the diesel engine in Figure 2 spectra areshown as they are typical for a diffusion com-bustion and a well premixed combustion. Withdiffusion combustion, only the characteristicradiation continuum of soot can be observed.Band radiation of excited molecules or radicalscannot be evidenced in this case. A premixedcombustion shows a completely differentspectral radiation distribution. Besides a con-tinuum, which is formed through the closelyrelated pressureexpanded CO2- and HCO radi-ations bands, the OH band at 310 nm and theCH band at 430 nm are visible. The intensityof flame radiation is very low and the sootcontinuum is missing in this case completely.
The spectrum of the combustion in a gasengine is shown in Figure 3. Gas combustiontakes place homogenously premixed. In thespectrum, a very strong OH band at 310 nmand a weaker CH band at 430 nm are visible.Apart from the CO2-HCO continuum, a weaksoot continuum can also be evidenced in thelater combustion period.
Spectral measuring device
Figure 1
Author: Dr.-Ing. Roland Pittermann WTZ Roßlaug [email protected]
Spectra of diesel combustion
Figure 2
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Overall, time-resolved spectroscopy has provento be a useful means to research the mixtureformation and combustion process in dieseland gas engines. At WTZ Roßlaug GmbH aneffective tool for future combustion methoddevelopments is available.
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26 Short Note
New Learning Center on the Hamamatsu Homepage
Do you want to know?
- How does a TDI camera work?
- What is the relation of cooling temperature of an EM-CCD versus noise?
You can find the answers to these, and manyother questions in our new Learning Center.This new resource contains technical infor-mation on methods and terms related to dig-ital cameras, CCD sensors, TDI and Streak.Further topics will be added to the LearningCenter in the near future.
NEWS 2007 Vol.2
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Please have a look at the numerous reviewarticles and interactive tutorials under“Support” / “Learning Center” on our home-page www.sales.hamamatsu.com.
Example of the Learning Center: Interactive tutorial about noise sources of CCD cameras
Author: Hubert Ortner Hamamatsu Photonics Germany
Hamamatsu’s Innovative Technology wins Frost & Sullivan Award
On the 17th August 2007, the second editionof the Frost & Sullivan Industrial TechnologiesAwards was held in Singapore. The Awardsrecognise the outstanding performance bycompanies within a wide range of industriessuch as Electronics, Aerospace and Defenceand seek to showcase best practices in theseindustry segments.
Hamamatsu Photonics K.K., were the proudrecipients of the Award for ‘TechnologyInnovation of the Year’, Asia/Pacific, for theirSemiconductors Dicing Technology (StealthDicing Technology).
“Stealth dicing” is a completely new and inno-vative technology developed by HamamatsuPhotonics for cutting a silicon wafer into smallpieces. Stealth dicing technology is an inte-gration of optoelectronics and laser technol-ogy, including laser machining equipment, andIC thin film removal devices. This new technol-ogy is used in “Stealth dicing engines” whichcan be installed into wafer dicing equipment.
This new technique uses a laser beam at awavelength capable of transmitting throughthe material and is condensed on an internalpoint in that material. This selectively forms a
mechanical dam-age layer (stresslayer) in a localizedpoint near the lightfocus area so thatthe material is cutfrom the "inside"<Fig 1>.
27 Company News
The operating principle of stealth dicing is fun-damentally different from conventional bladedicing technology that cuts the material fromthe "outside".
In semiconductor manufacturing, there is agrowing trend to use larger wafers, yet thewafer itself is extremely thin. It is important toknow how many chips can be cut from onewafer or how accurately chips of highly sophis-ticated integrated circuits can be cut withoutbeing damaged. In the dicing process, thesmaller and more sophisticated the final chip,the harsher the conditions it must undergobefore becoming a finished product.
Stealth Dicing is an indispensable technologythat successfully removes all these harshconditions and uses processes that cause nodamage whatsoever to the wafer front or back-side surfaces or to the dicing tape on the waferbackside surface. Compared to conventionalblade dicing, Stealth Dicing also has no chip-ping and no airborne waste particles, eliminat-ing problems with device contamination.<Fig 2 Comparison of conventional bladedicing and Stealth Dicing>
There are also many other advantages suchas a positive environmental impact. Conven-tional dicing instruments require the use oflarge quantities of pure rinse water, however,Stealth dicing technology uses a dry processand eliminates the need for pure rinse water.This provides substantial cost savings in areassuch as sewerage processing and waste watertreatment.
Dicing equipment using a Stealth dicing enginealso has substantially lower energy consump-tion as a result of the processing techniquesused. In recognition of this, Hamamatsu wasalso the proud recipient of the JapanMachinery Federation 2007 Award for “BestEnergy Saving Device”. As a result, this tech-nology will enable semiconductor manufac-turing to contribute towards the improvementof the global environment.
For more information on this new technology,please contact your local office or visit:www.hamamatsu.com
Fig. 1
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Author: Jenny BrownHamamatsu Photonics UK
Germany:Hamamatsu Photonics Deutschland GmbHArzbergerstr. 10 . D-82211 HerrschingPhone: +49 (0) 8152 375-0 . Fax: +49 (0) 8152 2658e-mail: [email protected]://www.hamamatsu.deNorth-West: (for system products)Phone: +49 (0) 2831 94506 . Fax: +49 (0) 2831 94507e-mail: [email protected]:Please contact Hamamatsu Photonics GermanyNetherlands:Postbus 50.075 . NL-1305 AB AlmerePhone: +31 (0) 36 5382123 . Fax: +31 (0) 36 5382124e-mail: [email protected]:RN 240ul. sw. A. Boboli 8 . PL-02525 WarsawPhone: +48 (0) 22 6460016 . Fax: +48 (0) 22 6460018 e-mail: [email protected]
France:Hamamatsu Photonics France S.A.R.L.19, rue du Saule Trapu . Parc du Moulin de MassyF-91882 Massy CedexPhone: +33 (0) 1 69 53 71 00 . Fax: +33 (0) 1 69 53 71 10e-mail: [email protected]://www.hamamatsu.frGrenoble:Buro Club Meylan29 Boulevard des Alpes . 38246 Meylan CedexPhone: +33 (0) 4 76 6144 50 . Fax: +33 (0) 4 76 6144 44 e-mail: [email protected]:Dornacherplatz 7 . CH-4500 SolothurnPhone: +41 (0) 32 625 60 60 . Fax: +41 (0) 32 625 60 61e-mail: [email protected]://www.hamamatsu.chSpain-Portugal:Centro de Empresas de Nuevas Tecnologias Parque Tecnológico del VallésE-08290 Cerdanyola (Barcelona)Phone: +34 93 582 44 30 . Fax: +34 93 582 44 31e-mail: [email protected]://www.hamamatsu.esBelgium:Parc Scientifique -7 . Rue du BosquetB-1348 Louvain-la NeuvePhone: +32 (0) 10 45 63 34 . Fax: +32 (0) 10 45 63 67e-mail: [email protected]
Italy:Hamamatsu Photonics Italia S.r.l.Strada della Moia, 1/E . I-20020 Arese (Milano)Phone: +39-02 9358 1733 . Fax: +39-02 9358 1741e-mail: [email protected]://www.hamamatsu.itSouth office:Viale Cesare Pavese, 435 . I-00144 RomaPhone: +39-06 5051 3454 . Fax: +39-06 5051 3460e-mail: [email protected]
United Kingdom:Hamamatsu Photonics UK Ltd.2 Howard Court . 10 Tewin Road . Welwyn Garden CityHertfordshire AL7 1BW . EnglandPhone: +44 (0) 1707 294888 . Fax: +44 (0) 1707 325777e-mail: [email protected]://www.hamamatsu.co.ukSouth Africa:PO Box 1112 . Buccleuch 2066 . JohannesburgRepublic of South AfricaPhone / Fax: +27 (0) 11 802 5505Cellphone: +27 (0) 83 298 9266e-mail: [email protected]
North Europe & CIS:Hamamatsu Photonics Norden ABSmidesvägen 12 . SE-17141 Solna . SwedenPhone: +46 (0) 8 50 90 31 00 . Fax: +46 (0) 8 50 90 31 01e-mail: [email protected]://www.hamamatsu.comRussia:Riverside TowersKosmodamianskaya nab., 52/1A . 14th FloorRU-113054 Moscow . RussiaPhone / Fax: +7 495 411 51 54 e-mail: [email protected]
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