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LAOSTO VO 2 New Perspectives in ab initio Calculations for Semiconducting Oxides Volker Eyert Center for Electronic Correlations and Magnetism Institute of Physics, University of Augsburg October 28, 2010 Volker@Eyert.de New Perspectives in ab initio Calculations

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LAOSTOVO2

New Perspectives in ab initio Calculations forSemiconducting Oxides

Volker Eyert

Center for Electronic Correlations and MagnetismInstitute of Physics, University of Augsburg

October 28, 2010

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Outline

1 LAOSTO

2 VO2

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Outline

1 LAOSTO

2 VO2

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Calculated Electronic Properties

Moruzzi, Janak, Williams (IBM, 1978)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga

E/R

yd

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Rb Sr Y Zr Nb Mo Tc Ru Rh Pd Ag Cd In

E/R

yd

Cohesive Energies=̂ Stability

2

2.5

3

3.5

4

4.5

5

5.5

K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga

WSR

/au

2

2.5

3

3.5

4

4.5

5

5.5

Rb Sr Y Zr Nb Mo Tc Ru Rh Pd Ag Cd In

WSR

/au

Wigner-Seitz-Rad.=̂ Volume

0

500

1000

1500

2000

2500

3000

3500

4000

K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga

Bul

k m

odul

us/k

bar

0

500

1000

1500

2000

2500

3000

3500

4000

Rb Sr Y Zr Nb Mo Tc Ru Rh Pd Ag Cd In

Bul

k m

odul

us/k

bar

Compressibility=̂ Hardness

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Energy band structures from screened HF exchange

Si, AlP, AlAs, GaP, and GaAs

Experimental andtheoretical bandgapproperties

Shimazaki, AsaiJCP 132, 224105 (2010)

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Outline

1 LAOSTO

2 VO2

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2D Electron Gas at LaAlO3-SrTiO3 Interface

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2D Electron Gas at LaAlO3-SrTiO3 Interface

Issues

Role of electronic correlations?SrTiO3, LaAlO3: band insulatorsSrTiO3/LaAlO3 interface: MIT (# LaAlO3 layers)magnetic properties of the interfacesuperconductivity below ≈ 200 mK

What is the origin of the 2-DEG?intrinsic mechanism?defect-doping?

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Slab Calculations for the LaAlO3-SrTiO3 Interface

Structural setup of calculations

central region: 5 layers SrTiO3, TiO2-terminated

sandwiches: 2 to 5 layers LaAlO3, AlO2 surface

vacuum region ≈ 20 Å

inversion symmetry

lattice constant of SrTiO3 from GGA (3.944 Å)

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Slab Calculations for the LaAlO3-SrTiO3 Interface

Calculational method

Vienna Ab Initio Simulation Package (VASP)

GGA-PBESteps:

1 optimization of SrTiO3 lattice constant2 slab calculations

full relaxation of all atomic positions5× 5× 1 k-pointsΓ-centered k-meshMethfessel-Paxton BZ-integration

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Slab Calculations for the LaAlO3-SrTiO3 Interface

Ideal

Structural relaxation

AlO2 surface layersstrong inward relaxationweak buckling

LaO layersstrong buckling

AlO2 subsurface layersbuckling

TiO2 interface layerssmall outward relaxation

Optimized

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Slab Calculations for the LaAlO3-SrTiO3 Interface

0

20

40

60

80

100

120

-10 -8 -6 -4 -2 0 2 4 6

DO

S (

1/eV

)

(E - EF) (eV)

2L3L4L5L

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Tunneling Spectroscopy of LaAlO3-SrTiO3 Interface

What is the origin of the 2-DEG?Intrinsic mechanism or defect-doping?

Vs

It

interface electron system

4 unit cells LaAlO3

SrTiO3

Ti

STM

tipz

x

M. Breitschaft et al., PRB 81, 153414 (2010)

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Tunneling Spectroscopy of LaAlO3-SrTiO3 Interface

4uc LaAlO3 on SrTiO3,tunneling data

4uc LaAlO3 on SrTiO3,LDA calculations,DOS of interface Ti

4uc LaAlO3 on SrTiO3,LDA+U calculations,DOS of interface Ti

(a)

(b)

(c)

LDA+U

LDA

exp.

VS (V)

E - EF (eV)

E - EF (eV)

ND

C (

arb

. u

nits)

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Tunneling Spectroscopy of LaAlO3-SrTiO3 Interface

bulk SrTiO3,LDA calculations,conduction band DOS

0

2

4

6

8

10

12

14

2 2.5 3 3.5 4 4.5 5

DO

S (

1/eV

)

(E - EV) (eV)

(a)

(b)

(c)

LDA+U

LDA

exp.

VS (V)

E - EF (eV)

E - EF (eV)

ND

C (

arb

. u

nits)

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“2D Electron Liquid State” at LaAlO3-SrTiO3 Interface

SrTiO3LaAlO3AlxGa1-xAs GaAs

CB

VBEF

EF Ti 3d

(a) (b)s

M. Breitschaft et al., PRB 81, 153414 (2010)

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Critical review of the Local Density Approximation

Limitations and Beyond

LDA exact for homogeneous electron gas (within QMC)Spatial variation of ρ ignored→ include ∇ρ(r), . . .→ Generalized Gradient Approximation (GGA)

Self-interaction cancellation in vHartree + vx violated→ repair using exact Hartree-Fock exchange functional→ hybrid functionals (PBE0, HSE03, HSE06)

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Critical review of the Local Density Approximation

Limitations and Beyond

Self-interaction cancellation in vHartree + vx violated→ repair using exact Hartree-Fock exchange functional→ hybrid functionals (PBE0, HSE03, HSE06)

GGA

W L G X W K

En

er

gy

(e

V)

− 1 0

0

Si bandgap

exp: 1.11 eV

GGA: 0.57 eV

HSE: 1.15 eV

HSE

W L G X W K

En

er

gy

(e

V)

− 1 0

0

1 0

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Critical review of the Local Density Approximation

Limitations and Beyond

Self-interaction cancellation in vHartree + vx violated→ repair using exact Hartree-Fock exchange functional→ hybrid functionals (PBE0, HSE03, HSE06)

GGA

W L G X W K

En

er

gy

(e

V)

− 1 0

0

Ge bandgap

exp: 0.67 eV

GGA: 0.09 eV

HSE: 0.66 eV

HSE

W L G X W K

En

er

gy

(e

V)

− 1 0

0

1 0

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Critical review of the Local Density Approximation

Calculated vs. experimental bandgaps

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SrTiO3

GGA

0

2

4

6

8

10

-8 -6 -4 -2 0 2 4 6 8 10

DO

S (

1/eV

)

(E - EV) (eV)

Bandgap

GGA: ≈ 1.6 eV, exp.: 3.2 eV

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SrTiO3

GGA

0

2

4

6

8

10

-8 -6 -4 -2 0 2 4 6 8 10

DO

S (

1/eV

)

(E - EV) (eV)

HSE

0

2

4

6

8

10

-8 -6 -4 -2 0 2 4 6 8 10

DO

S (

1/eV

)

(E - EV) (eV)

Bandgap

GGA: ≈ 1.6 eV, HSE: ≈ 3.1 eV, exp.: 3.2 eV

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LaAlO3

GGA

0

5

10

15

20

25

-8 -6 -4 -2 0 2 4 6 8 10

DO

S (

1/eV

)

(E - EV) (eV)

Bandgap

GGA: ≈ 3.5 eV, exp.: 5.6 eV

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LaAlO3

GGA

0

5

10

15

20

25

-8 -6 -4 -2 0 2 4 6 8 10

DO

S (

1/eV

)

(E - EV) (eV)

HSE

0

5

10

15

20

25

-8 -6 -4 -2 0 2 4 6 8 10

DO

S (

1/eV

)

(E - EV) (eV)

Bandgap

GGA: ≈ 3.5 eV, HSE: ≈ 5.0 eV, exp.: 5.6 eV

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Outline

1 LAOSTO

2 VO2

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Metal-Insulator Transition of VO2

Morin, PRL 1959 Metal-Insulator Transitions (MIT)

VO2 (d1)1st order, 340 K, ∆σ ≈ 104

rutile → M1 (monoclinic)

V2O3 (d2)1st order, 170 K, ∆σ ≈ 106

corundum → monoclinicparamagn. → AF order

Origin of the MIT???

Structural Changes?

Electron Correlations?

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Metal-Insulator Transition of VO2

Octahedral Coordination

O 2p

V 3d t2g

V 3d eσ

g

EF

σ

π

π∗

σ∗

V 3d -O 2p hybridizationσ, σ∗ (p-deσ

g )π, π∗ (p-dt2g)

Rutile Structure

simple tetragonal

P42/mnm (D144h)

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Metal-Insulator Transition of VO2

Octahedral Coordination

O 2p

V 3d t2g

V 3d eσ

g

EF

σ

π

π∗

σ∗

V 3d -O 2p hybridizationσ, σ∗ (p-deσ

g )π, π∗ (p-dt2g)

g Orbitals

t2g Orbitals

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Metal-Insulator Transition of VO2

Octahedral Chains Rutile Structuresimple tetragonal

P42/mnm (D144h)

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Metal-Insulator Transition of VO2

Octahedral Coordination

O 2p

V 3d t2g

V 3d eσ

g

EF

σ

π

π∗

σ∗

t2g Orbitals

��

AA a1g = “d‖”

g = “π∗”

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Metal-Insulator Transition of VO2

Rutile Structure

Structural Changes

V-V dimerization ‖ cR

antiferroelectricdisplacement ⊥ cR

M1-Structure

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Metal-Insulator Transition of VO2

Rutile M1

EF

π∗π∗

d‖d‖

d∗‖

Goodenough, 1960-1972metal-metal dimerization ‖ cR → splitting into d‖, d∗

antiferroelectric displacement ⊥ cR → upshift of π∗

Zylbersztejn and Mott, 1975splitting of d‖ by electronic correlationsupshift of π∗ unscreenes d‖ electrons

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Metal-Insulator Transition of VO2

Other Compounds

d0 d1 d2 d3 d4 d5 d6

3d TiO2 VO∗2 CrO2 MnO2

(S) (M–S) (F–M) (AF–S)

4d NbO∗2 MoO∗

2 TcO∗2 RuO2 RhO2

(M–S) (M) (M) (M) (M)

5d TaO2 WO∗2 ReO∗

2 OsO2 IrO2 PtO∗2

(?) (M) (M) (M) (M) (M)∗ deviations from rutile, M = metal, S = semiconductorF/AF = ferro-/antiferromagnet

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Metal-Insulator Transition of VO2

Other Phases

-0.01 0.02 0.03 0.04 0.05 x

6

100200300T(K) LLLLLLLLLLLLLLLLLLL

XXXXXXXXXXXXXXXXXXXXXXXXXXXuu uu A u uu u####B eeeeuuuuA e ee eu uu u����B

uuuuA uu uu u\\��\\��BM1 T M2R doping withCr, Al, Fe, Ga

uniaxial pressure‖ 〈110〉

CrxV1−xO2

Pouget, Launois, 1976

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Electronic Structure in Detail

Rutile Structuremolecular-orbital picture X

octahedral crystal field=⇒ V 3d t2g /eg

V 3d–O 2p hybridization

0

1

2

3

4

5

-8 -6 -4 -2 0 2 4 6 8

DO

S (1

/eV

)(E - EF) (eV)

V 3d t2gV 3d eg

O 2p

VE, Ann. Phys. (Leipzig) 11, 650 (2002)

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Electronic Structure in Detail

Rutile Structuremolecular-orbital picture X

octahedral crystal field=⇒ V 3d t2g /eg

V 3d–O 2p hybridization

t2g at EF: dx2−y2 , dyz , dxz

n(dx2−y2) ≈ n(dyz) ≈n(dxz)

0

0.5

1

1.5

2

2.5

3

3.5

-1 0 1 2 3 4 5

DO

S (1

/eV

)(E - EF) (eV)

V 3dx2-y2

V 3dyzV 3dxz

VE, Ann. Phys. (Leipzig) 11, 650 (2002)

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Electronic Structure in Detail

Rutile Structure

0

0.5

1

1.5

2

2.5

3

3.5

-1 0 1 2 3 4 5

DO

S (1

/eV

)

(E - EF) (eV)

V 3dx2-y2

V 3dyzV 3dxz

M1 Structure

0

0.5

1

1.5

2

2.5

3

-1 0 1 2 3 4 5

DO

S (1

/eV

)

(E - EF) (eV)

V 3dx2-y2

V 3dyzV 3dxz

bonding-antibonding splitting of d‖ bands

energetical upshift of π∗ bands =⇒ orbital ordering

optical band gap on the verge of opening

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Further investigations

Cluster-DMFT Calculations

Rutile-VO2

moderately correlated metal

M1-VO2

correlations strong/weak on d‖/π∗

optical band gap of 0.6 eV

Phase Transition“correlation-assisted Peierls transition”

S. Biermann, A. Poteryaev, A. I. Lichtenstein, A. GeorgesPRL 94, 026404 (2005)

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New Calculations: GGA vs. HSE

Rutile Structure GGA

0

1

2

3

4

5

-10 -8 -6 -4 -2 0 2 4

DO

S (

1/eV

)

(E - EF) (eV)

V 3dO 2p

Rutile Structure HSE

0

1

2

3

4

5

-10 -8 -6 -4 -2 0 2 4

DO

S (

1/eV

)

(E - EF) (eV)

V 3dO 2p

Rutile Structure: GGA =⇒ HSE

broadening of O 2p and V 3d t2g(!) bands

splitting within V 3d t2g bands

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New Calculations: GGA vs. HSE

M1 Structure GGA

0

1

2

3

4

5

-10 -8 -6 -4 -2 0 2 4

DO

S (

1/eV

)

(E - EF) (eV)

V 3dO1 2pO2 2p

M1 Structure HSE

0

1

2

3

4

5

-10 -8 -6 -4 -2 0 2 4

DO

S (

1/eV

)

(E - EF) (eV)

V 3dO1 2pO2 2p

M1 Structure: GGA =⇒ HSE

splitting of d‖ bands, upshift of π∗ bands

optical bandgap of ≈ 1 eV

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New Calculations: GGA vs. HSE

M1 Structure GGA

C Y G B A E Z

En

er

gy

(e

V)

−1

0

1

M1 Structure HSE

C Y G B A E Z

En

er

gy

(e

V)

−1

0

1

2

3

M1 Structure: GGA =⇒ HSE

splitting of d‖ bands, upshift of π∗ bands

optical bandgap of ≈ 1 eV

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New Calculations: GGA vs. HSE

M2 Structure GGA

P a r t i a l D e n s i t y o f S t a t e s ( 1 / e V )

−4 −2 0 2 4

En

er

gy

(e

V)

− 1 0

−5

0

5

T o t a l a n d S u m m e d D e n s i t y o f S t a t e s ( 1 / e V )

− 1 0 0 1 0

M2 Structure HSE

P a r t i a l D e n s i t y o f S t a t e s ( 1 / e V )

−4 −2 0 2 4

En

er

gy

(e

V)

− 1 0

−5

0

5

T o t a l a n d S u m m e d D e n s i t y o f S t a t e s ( 1 / e V )

− 2 0 − 1 0 0 1 0 2 0

M2 Structure: GGA =⇒ HSE

localized magnetic moment of 1 µB

optical bandgap of ≈ 1.6 eV

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Unified Picture

Rutile-Related Transition-Metal Dioxides

VO2 (3d1), NbO2 (4d1), MoO2 (4d2)(WO2 (5d2), TcO2 (4d3), ReO2 (5d3))

instability against similar local distortionsmetal-metal dimerization ‖ cR

antiferroelectric displacement ⊥ cR

(„accidental“) metal-insulator transition of the d1-members

VE et al., J. Phys.: CM 12, 4923 (2000)VE, Ann. Phys. 11, 650 (2002)VE, EPL 58, 851 (2002)J. Moosburger-Will et al., PRB 79, 115113 (2009)

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Success Stories

LaAlO3/SrTiO3

0

20

40

60

80

100

120

-10 -8 -6 -4 -2 0 2 4 6

DO

S (

1/eV

)

(E - EF) (eV)

2L3L4L5L

Metal-Insulator Transitions in VO2

0

1

2

3

4

5

-10 -8 -6 -4 -2 0 2 4

DO

S (

1/eV

)

(E - EF) (eV)

V 3dO1 2pO2 2p

0

1

2

3

4

5

-10 -8 -6 -4 -2 0 2 4

DO

S (

1/eV

)

(E - EF) (eV)

V 3dO1 2pO2 2p

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Acknowledgments

Augsburg

M. Breitschaft, U. Eckern,K.-H. Höck, S. Horn, R. Horny,T. Kopp, J. Kündel, J. Mannhart,J. Moosburger-Will, N. Pavlenko

Darmstadt/Jülich

P. C. Schmidt, M. Stephan,J. Sticht †

Europe/USA

M. Christensen, C. Freeman,M. Halls, A. Mavromaras, P. Saxe,E. Wimmer, R. Windiks, W. Wolf

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Acknowledgments

Augsburg

M. Breitschaft, U. Eckern,K.-H. Höck, S. Horn, R. Horny,T. Kopp, J. Kündel, J. Mannhart,J. Moosburger-Will, N. Pavlenko

Darmstadt/Jülich

P. C. Schmidt, M. Stephan,J. Sticht †

Europe/USA

M. Christensen, C. Freeman,M. Halls, A. Mavromaras, P. Saxe,E. Wimmer, R. Windiks, W. Wolf

San Diego

Thank You for Your Attention!

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