New Intelligent Power Module Series

POWER MODULESNew Intelligent Power ModuleSeries

ISSUE 2 – MARCH 2008

Also inside this issueOpinion | Market News | PCIM 2008 | Current Sensing | InverterDesign | Thermal Management | Products | Website Locator

p01 Cover:p01 Cover 22/1/09 11:37 Page 1

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THE POWER MANAGEMENT LEADER

10073 S i B k PEE 01 i dd 1 21/1/08 09 32 52

02_PEE_0208:02_PEE_0308 22/1/09 11:31 Page 1

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CONTENTS

Power Electronics Europe Issue 2 2008

3

Editor Achim ScharfTel: +49 (0)892865 9794Fax: +49 (0)892800 132Email: [email protected]

Production Editor Elaine GladwellTel: +44 (0)1322 380057

Editorial/Advertisement AdministrationClare JacksonTel: +44 (0)1732 886495Fax: +44 (0)1732 886149

Circulation Manager Anne BackersTel: +44 (0)208 647 3133Fax: +44 (0)208 669 8013

INTERNATIONAL SALES OFFICESMainland Europe:Victoria Hufmann, Norbert HufmannTel: +49 911 9397 643 Fax: +49 911 9397 6459Email: [email protected]

Armin WezelTel: +49 9568 897 097 Fax: +49 9568 897 096Email: [email protected]

UKSteve Regnier, Tim AnsteeTel: +44 (0)1732 366555email: [email protected]

USA West Coast SalesShelley KellyTel: (310) 547 1777 Fax: (310) 519 0809Email: [email protected] East Coast SalesKaren C Smith-Kerncemail: [email protected] A KerncTel: +1 717 397 7100Fax: +1 717 397 7800email: [email protected]

ItalyFerruccio SilveraTel: +39 022 846 716 Email: [email protected] Ind. Service Corp.Tel: 886 2 2322 5266 Fax: 886 2 2322 2205

Publisher Ian AtkinsonTel: +44 (0)1732 886495Fax: +44 (0)1732 886149Email: [email protected]

Circulation and subscription: Power ElectronicsEurope is available for the following subscriptioncharges. Power Electronics Europe: annual chargeUK/NI £60, overseas $130, EUR 120; single copiesUK/NI £10, overseas US$32, EUR 25. Contact:Techmedia International Ltd, Kildonan, St Mary’sRoad, Wrotham, Kent TN15 7AP, Great Britain.Tel: +44 (0)1732 886495. Fax: +44 (0)1732886149. Refunds on cancelled subscriptions willonly be provided at the Publisher’s discretion, unlessspecifically guaranteed within the terms ofsubscription offer.

Editorial information should be sent to The Editor,Power Electronics Europe, PO Box 340131, 80098Munich, Germany.

The contents of Power Electronics Europe aresubject to reproduction in information storage andretrieval systems. All rights reserved. No part of thispublication may be reproduced in any form or by anymeans, electronic or mechanical includingphotocopying, recording or any information storageor retrieval system without the express prior writtenconsent of the publisher.Origination: Elaine GladwellPrinted by: Wyndeham Heron Limited.ISSN 1748-3530

PAGE 16

Reliable Power Electronics forWindmill GeneratorsIn the megawatt range, high-power electronics applications need powerfulsemiconductors. However, even the largest semiconductors available today arestill not strong enough for some applications. It is therefore necessary to connectthem in parallel. Dejan Schreiber, Senior Applications Manager,SEMIKRON, Nuremberg, Germany

PAGE 24

System-Oriented IGBT Module forHigh Power InvertersAlthough IGBT modules with blocking voltages up to 6500V are available today,there are many applications that require the design of inverters with ratings closeto or even beyond 1MVA with 1200V or 1700V devices. The recently introducedPrimePACK module housing, together with the new IGBT4 technology in 1200and 1700V, fits this market by enabling a cost-effective and modular inverterdesign. Piotr Luniewski and Uwe Jansen, Infineon Technologies AG,Warstein, Germany

PAGE 26

Current Sensor Selection forDemanding ApplicationsFollowing on from the general approach we adopted in PEE 8-2007, we nowconcentrate our attention on the three principle technologies used whereaccurate, reliable and cost-effective current measurement is required. With thisarticle we will restrict current sensor types to the three major types, namely shuntswith and without galvanic isolation, open-loop hall-effect current sensors andclosed-loop hall-effect current sensors. Warren Pettigrew, CTO Raztec Sensors,Christchurch, New Zealand

PAGE 30

Gate Drive Optocoupler SimplifiesInverter DesignReplacing conventional single and multi-speed electric motors withsemiconductor-based variable-speed drives offers significant energy savings. Agrowing number of engineers choose to use integrated gate drive optocouplers intheir inverter designs. First of all, integrated gate drive optocouplers provide bothlevel shifting and reinforced (safe) isolation at the interface between the powerstage and the control circuitry. The new ACPL-H312 integrated gate driveoptocoupler is a basic building block for all kinds of inverters. Erik Halvordsson,Avago Technologies, Böblingen, Germany

PAGE 32

Ceramic Heatsink Provides InnovativeThermal ManagementA new ceramic technology offers an innovative solution for thermally sensitivecomponents and circuits, thanks to its excellent thermal conductivity and stabilitycharacteristics and its compact form. CeramCool is the ideal heatsink for high-power semiconductors where it demonstrates its ability to handle high powerpeaks. Alfred Thimm, Service Center Design, CeramTec AG, Plochingen,Germany

PAGE 34

Product UpdateA digest of the latest innovations and new product launches

PAGE 37

Website Product Locator

New Intelligent PowerModule SeriesThe popularity of IGBTs in a wide range of industrialpower conversion applications is a direct result of thetechnological advances that have been made. Thedevelopment over the last few years has made theIGBT a power switch with rugged switchingcharacteristics, low losses and simple gate drive.Continuous market growth of general purposeinverters and servo drives is boosting the demand ofIntelligent Power Modules (IPM). The new IPM ‘L1-Series’ featuring high speed and low loss IGBT chipswith full gate CSTBT and is mechanical compatible tothe existing L-Series IPM. Full story on page 21.

Cover supplied by Mitsubishi Electric Europe

COVER STORY

PAGE 6

Market News

PEE looks at the latest Market News and companydevelopments

PAGE 13

PCIM 2008 Report -Get Up-to-Date withTutorialsEurope’s leading Exhibition and Conference forPower Electronics, Intelligent Motion and PowerQuality/Energy Management is on the road tosuccess again. In 2007, the exhibition achieved itslargest exhibition space ever with 10,500 sqm, butalready the figures for this year’s event in Nuremberg(27-29 May 2008) are showing an increase.

p03 Contents :p03 Contents 22/1/09 11:38 Page 3

mailto:[email protected]









http://www.power-mag.com

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04_PEE_0208:04_PEE_0308 22/1/09 11:32 Page 1

OPINION 5


Achim ScharfPEE Editor

A suitablequote as alead in to

the editorsopinion

Achim Scharf

Digital power isno longer apromise, but acommercial factwith manyavailableproducts. Thereasons for themarket

interruption are competitive cost compared to analogsolutions and additional functionality at almost no extra cost.Additionally, international policies for energy saving, likeEnergy Star or European Codes of Conduct, can be moreeasily met using digital power. This may become a drivingforce for digital power adoption, though the market is in itsinfancy, according to IMS research analyst David Dewan at arecently held ECPE seminar. Digital power refers not only tothe digital implementation of the control loop of a powerconverter, but also to the power management in its broadersense, including monitoring and fault detection,programming of the loop filter and control algorithm, trackingof output voltages, sequencing of different voltage rails,margining of power converters or remote maintenance.Digital power can improve efficiency, from 92% in an analogrectifier up to 96% in a digitally controlled rectifier fortelecom applications. Two main approaches can bedistinguished: Fully digital controlled converters includingclosed loop control (driven by ICs or microcontrollers) anddigitally managed analog or semi-digital contolled converters(complete modules which use digital techniques for controland/or power management). Attention also needs to bepaid to the communication bus. Among the availablealternatives, PMBus is becoming most popular, alreadyadopted by the main players. An increasing market transitionfrom analog to digital power is foreseen in the near future.Though associated controller ICs are the domain of US-based manufacturers and Texas Instruments should first ofall be mentioned here, this can be changed in the nearfuture through an alliance of Zilker Labs andSTMicroelectronics. And research in digital power atEuropean universties is in an advanced state, i.e. at theUniversty of Paderborn (Germany) or the Universty ofPadova (Italy).In the late 1990s, based on Digital Signal Processor

C2000, Texas Instruments contributed to developing the firstfully digital controlled UPS. Using a DSP to digitally controlthe switching and power management of an UPS system wasthe first practical application for digital power. In December2002, Texas Instruments introduced the industry’s first digitalsignal processing (DSP) Development Kit dedicated to powersupplies. With the UCD9240, in April 2007, Texas InstrumentsIntroduced the First ‘Digital Power System Controller, and inMay 2007, TI released a new concept ‘PowerTrain’ combiningthe UCD9240 and termination module PTD08A010W. InMay 2004, Artesyn Technologies Inc., Astec Power, and agroup of semiconductor manufacturers formed a coalition todevelop an open architecture communications standard forpower systems control. The coalition included semiconductorsuppliers Intersil Corp., Texas Instruments, VolterraSemiconductor, Microchip Technology Inc, SummitMicroelectronics, and Zilker Labs Inc. The digital protocol,named Power Management Bus or PMBus, aimed to beimplemented over the industry-standard I²C serial bus. Withthe introduction of the Z-One Digital IBA architecture inMarch 2004, Power-One announced the integration ofpower conversion, control, and communications in point-of-load power units. All digital ingredients seem to be in placefor success, but why is Digital Power not massively usedeverywhere? Patrick LeFevre from Ericsson Power Modulesgave the answer: “By nature, technology switch alwaysgenerates debates among the concerned community anddigital power follows the same pattern. Digital Power is atechnology evolution, not a technology revolution and, assuch, it will follow the same market rules as other evolutions“.Additionally, patent infringements leadings to disputesbetween i.e. Artesyn and Power-One could also slow downadoption.Time will tell whether Digital Power will be adopted in

Europe, particularly within the members of the EuropeanPower Supply Manufacturers Association (EPSMA). Certainlysupport by European IC manufacturers would be helpful. Andby the way, this technology can also help to reach theEuropean goal of increasing the efficiency of external powersupplies in the 36 to 250W range up to 87% at 100% loadby 2009. We will see and keep you informed.

Achim ScharfPEE Editor

Digital Power onthe Move

p05 Opinion:p05 Opinion 22/1/09 11:38 Page 5

Primary (disposable) batteries and secondary (rechargeable) batteries are thefocus at the developer forum hosted by batteryuniversity.eu and the Universityof Applied Sciences Aschaffenburg/Germany.The goal of this first event, held from April 9 to 10, 2008 in Aschaffenburg,

Germany, is to present in 28 sessions a broad knowledge on different topics

such as current battery technologies and chemicals, battery drives for electricvehicles, battery test systems, regulations and standards, battery chargingtechnologies, safety requirements, safety tests and protection circuits.Attendance fee for the two-day forum is 480 Euros plus VAT.www.batteryuniversity.eu

Developer Forum on Battery Technologies

“Digital Power is now happening, butwith sales of $2.2 million in 2007 forfully digital power supplies, is in itsinfancy compared to the sales figureof analog/digital power supplies atmore than $300 million“, stated IMSanalyst David Dewan. Today, digitallycontrolled power supplies areoffered i.e. by Cherokee, Eltek-Valere,Emerson Embedded Power, EricssonPower Modules, and Power-One.“But the future looks bright; weforecast annual growth rates ofroughly 50% up to $1.5 billion bythe year 2011 for hybrid digitalpower supplies, and 44% for PowerICs, from $120 million in 2007 to$600 million in 2011. Nevertheless,by 2011 only 7.1% of the merchantpower supply market is fully digital,and the same applies with 7.3% forthe power IC market“. Though theinitial costs of fully digital solutionsare somewhat higher, theadvantages can be paid back in ashort period of time. “Digital powercan improve efficiency, from 92% inan analog rectifier up to 96% in adigitally controlled rectifier fortelecom applications“, Dewan stated.“It’s not efficiency at one power

rail that counts, it’s the efficiency ofthe whole system“, commentedFrancois Malleu, EMEA BusinessDevelopment Manager from TexasInstruments. The companypresented a paper describingefficiency improvements byintelligently selecting different phaseconfigurations based on differentload conditions where, at light load,only one phase is enabled versehaving all phases turned on duringfull load operation. “There’s also ashort time to market for a newdesign, just by changing software“.Frank Schafmeister, from Delta

Energy Systems Germany, agreedwith this efficiency statement.“Efficiency is a major concern,particularly in server power supplies,one of our major businesses. Here,the operators of data centres raisestandards much higher thanlegislation“. And this tranlates intoreal savings for electrical energy. “AtGoogle’s data centres, an increase of1% in efficiency saves them $1million“, added Manfred Schlenkfrom Infineon. “Also, powermanageability comes with digitalpower, and interleaved power factorcorrection can be betterimplemented“.

Aleks Prodic, from the Universityof Toronto, views the reuseability ofdigital power buildings blocks as abig advantage. “And, by the way,though higher efficiency the heatsinkcan be reduced significantly, makingthe total system smaller. One canalso time-share an inductor fordifferent phases saving space andcost as well“.But according to IMS’s analysis,

adoption takes time. “We have

implemented monitoring andcommunication fuctions in ourpower supplies which can be solvedwith cheap 8bit microcontrollers. Ifwe move to digital power, weenvision other factors such as betterefficiency, but here other points suchas improvements in passive andmagnetic components have to beconsidered. We will not switch todigital power overnight; this isdependent also on the pricing of thechips“, Schafmeister concluded.

AS

LiteratureDigital Power Forum Europe,

Power Electronics Europe Dec2007, pages 14-15.

www.ecpe.org

High Growth for Digital Power Anticipated

“It’s not efficiency at one power rail thatcounts, it’s the efficiency of the wholedigital power system“, said TI’s FrancoisMalleu

“One can time-share an inductor fordifferent phases saving space and cost aswell“, added Aleks Prodic from theUniversity of Toronto

“ We will not switch to digital powerovernight, this is dependent also on thepricing of the chips“, Delta’s FrankSchafmeister concluded

“Also power manageability comes withdigital power, and interleaved powerfactor correction can be betterimplemented“, commented Infineon’sManfred Schlenk

6 MARKET NEWS

Issue 2 2008 Power Electronics Europe

Due to the increasing interest in so-called Digital Power, ECPE organised a seminar from February 20-21 inMunich. The mixed academic/industrial program attracted more than 80 delegates and gave new insights interms of market evolution, technology and applications.

p06-11 Market News:Layout 1 22/1/09 11:39 Page 6

http://www.batteryuniversity.eu

http://www.ecpe.org

Industry’s First High-Voltage Monolithic Two-Switch Forward DC-DC Regulator

© National Semiconductor Corporation, 2008. National Semiconductor, and are registered trademarks of National Semiconductor Corporation. All rights reserved.

LM5015 Switch-Mode Regulator Features Ultra-Wide Input Voltage Range from 4.25V to 75V

national.com/power

Product ID VIN min (V) VIN max (V) Integrated Switches Switch Voltage Rating (V) Current Limit (A) Package

LM5000 3.1 40 Low-Side 75 2 TSSOP-16 / LLP-16

LM5001 3.1 75 Low-Side 75 1 SO-8 / LLP-8

LM5002 3.1 75 Low-Side 75 0.5 SO-8 / LLP-8

LM5015 4.25 75 Low- and High-Side 75 1 TSSOP-14EP

ApplicationsCommunications, computing, industrial, medical, video, and test and measurement.

LM5015 FeaturesDual integrated 75V N-channel MOSFETsUltra-wide input voltage range: 4.25V to 75VAdjustable output voltageIntegrated current sensing and limiting

Current-mode controlOscillator synchronization capabilityProgrammable soft-start

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For samples, datasheets, and more, visit:national.com/powerPhone: +44 (0) 870 850 4288Email: [email protected]

07_PEE_0208:07_PEE_0308 22/1/09 11:32 Page 1


Tel +41-32-344 47 47Fax +41-32-344 47 40

08_PEE_0208:08_PEE_0308 22/1/09 11:30 Page 1

Tyco Electronics has sold its division TycoElectronics Power Systems to the Los Angelesheadquarted Gores Group, a private equity firmfocused on acquiring controlling interests inmature and growing businesses, for $100 millionin cash. A newly formed company, LineageHoldings, will keep the business running.Lineage Holdings operates through two separate

entities, Lineage Power and Vincotech. LineagePower is headquartered in Mesquite, Texas, withapproximately 1900 employees and providespower supply and power conversion products andservices to telecom service providers andenterprise customers. Vincotech provides powermodules and other technologies used in industrial,

automotive, and GPS applications. Vincotech isbased in Germany, with 600 employees andmanufacturing operations in Hungary and China.“All US employees will become members of thenew company, while the assets and employees ofthe business in Shanghai, India, Germany andcertain other European jurisdictions will betransferred following the satisfaction of certainregulatory and other customary closing conditions.Gores will provide financial support and leverageits operating expertise to create a platform forprofitable growth”, commented Ryan Wald,Managing Director of the in 1987 founded GoresGroup.www.gores.com

Recent studies by Frost & Sullivan estimate theWestern European Wind Power Market marketof $9 billion in 2006 to reach $15 billion in2013. The North American Wind EnergyGenerator Market is between $4 and $5 billionin 2006 and is estimated to touch $50 billion in2013.Germany, playing the pied piper, heralded a

new era in renewable energy by introducingmeticulously planned energy policies and robustGovernment support for the wind powermarket. The Western European marketregistered a stunning growth rate of 18% incumulative installed capacity in 2006, largelythanks to German feed-in tariffs and theirSpanish equivalent. “Ever since Germany passedthe Renewable Energy Act in 2000 andamended it in 2004, there has been no lookingback for the Western European wind powermarket”, notes Research Director Harald Thaler.“The Act relating to the purchase of renewableenergy for four times the market rate madeGerman wind installations soar and catapultedGermany to the top slot in the global windmarket”. The 2001 EU directive on renewableenergy requires each member state to achieve aset percentage of renewable energy in their

power supply by 2010. For electricity supply, theoverall European target is for 21%.Meanwhile, the US wind energy industry is well

on course to add more than 3GW to its powergenerating capacity in 2007, topping its 2006record of 2.5GW. The country’s production taxcredit (PTC) is an influential growth factor, asinstallations increase and decrease depending onPTC’s extension and termination. “Industrialinvestments in production base and developerconfidence are also affected due to wavering PTCpolicy”, says Research Analyst S. Prem Anand.“However, state-based policies such as renewablesportfolio standard (RPS), renewable electricitystandards, and renewable energy productionincentive (REPI) moderately compensate forinconsistency in PTC implementation”. The USmarket witnessed a late surge in new wind turbineinstallations in the past two years, but it still trailsGermany in the global ranking. The wind powermarket in Canada becomes increasingly dynamicdue to federal and, more importantly, provincialefforts to promote this market. The country willgreatly benefit from the new wind legislationaimed at achieving 10 GW wind power generationby 2010.www.energy&power.frost.com

Lineage Runs TycoElectronics PowerSystems Business

Wind Power AccleratesPower SemiconductorBusiness

MARKET NEWS 9



http://www.gores.com

http://www.energy&power.frost.com

10 MARKET NEWS


LEDsMove Forward in AutomotiveThe car is becoming an ever more important home for light-emitting diodes (LEDs) as an alternative toincandescent light bulbs and halogen and xenon lamps. Their importance is set to explode, doubling from a$0.65 billion business in 2006 to $1.3 billion within 10 years, according to a recently published IMS report‘LEDs in Automotive Applications’. These figures are also of interest for the various manufacturers of LEDdrivers.

Today, most of the value comesfrom applications inside the car,such as backlighting dashboardsand displays, and supplying awide range of indicator lamps.However, the LED value fromexternal lamps will rise from athird of the LED total to over ahalf by 2013. Most external LEDlamps are at the rear, as brake, tailand turning lights. “However,Daytime Running Lights willbecome much more widely usedin the future. This business willgrow from under $5 million in2006 to over $100 million by2013”, commented analyst JamieFox. LED DRLs, which were firstintroduced on the Audi A8 in2004, are currently used on lessthan 1% of vehicles. However,IMS Research forecasts that, withvery strong growth after 2009, themarket revenues for LED DRLs inthe next decade will be similar torevenues for LEDs for functionsused in rear lighting applicationstoday. DRLs are the applicationthat will lead the way for LEDs tomove forward from the rear of thevehicle into front lighting.

This year, the soon-to-bereleased Audi R8 will feature a fullLED headlamp, supplied byAutomotive Lighting, with LEDssupplied by Osram and Lumileds.This will be the second vehicle tofeature LEDs in the headlamp,after the Lexus LS600h, whichused Koito headlamps with NichiaLEDs. The fact that Osram, Nichiaand Lumileds (which also led theway for LEDs used in DaytimeRunning Lights) are the three LEDcompanies pioneering thistechnology is no coincidence; asthese three companies dominatethe market for LEDs supplied tothe global car industry. As well assupplying LEDs for headlamps,the trio have the largest share ofthe high-value LED market in

automotive applications; such asin rear lighting and in instrumentclusters and other interiorapplications. While many othersuppliers, such as Toshiba, Avagoand Everlight, sell LEDs into thissector, they sell fewer.

Lumileds and Nichia do notcompete with each other to alarge extent, as IMS analyst JamieFox explained: “Lumileds sell LEDsmainly for exterior applications,while Nichia sell mainly forinterior applications. There arealso geographical differences inthe supply chain; for example,Nichia do not sell many LEDs forautomotive applications in Europe,where Osram are strong (in bothinterior and exterior applications)“.In the next decade however, asthe battleground moves frominterior and rear lightingapplications to the front of thevehicle, this seems set to change.Lumileds, Nichia and Osram allprovide LEDs of high brightnessand quality that are well-suited toforward lighting applications.

First LED headlightThe Cadillac Escalade Platinum is

the first sports utility vehicle (SUV)in the world to be fitted with LEDheadlights as standard. OSRAMLEDs perform all the functions inthe headlights supplied by Hella –

low beam, high-beam, daytimerunning light, position lights andside marker lights. Each headlightcontains seven OSTAR headlampLEDs – five for low beam and twofor high beam. Daytime RunningLight is provided by dimming thelow beam. This means there is noneed for an extra light source. Thisintelligent solution is only possiblewith LEDs. Each headlight also hasa position light with whiteAdvanced Power TopLEDs and aside marker light with yellow PowerTopLEDs.

The OSTAR Headlamp LED wasdeveloped specifically to meet therequirements of Hella, theheadlight manufacturer. It isamong the brightest LEDs for usein the automotive sector. With acolour temperature of 5500Kelvin, much higher than the4000 Kelvin of xenon light, thesetiny light sources create a lightwith the same colour impressionas natural daylight. The OSTAR isparticularly robust and canwithstand ambient temperaturesfrom -40° to +125°C. “Helping tocreate lighting solutions forautomobiles is part of our corebusiness”, said Wolfgang Lex,Head of the LED business unit atOSRAM Opto Semiconductors. “Inour cooperation projects withmanufacturers advanced headlightdesigns have gained inimportance in recent times.Because LEDs are so small,designers have almost unlimitedfreedom so they can clearlydifferentiate from competitors”.www.imsresearch.comwww.osram-os.com

The Cadillac Escalade Platinum is the first SUV in the world to be fitted with LEDheadlights as standard Source: Cadillac

Headlamp of the CadillacEscalade Platinum, seven OSTARLEDs perform all the functionsSource: Hella KGaAHueck&Co/Osram


http://www.imsresearch.com

http://www.osram-os.com

Effective March 1, 2008, Oleg Khaykin will serveas IR’s President and Chief Executive Officer,succeeding Donald Dancer, who has served asacting Chief Executive Officer since August2007.Mr Khaykin, 43, brings global experience in the

semiconductor industry, having served mostrecently as CEO of Amkor Technology, a providerof semiconductor assembly and test services, with22,000 employees worldwide. At Amkor, he wasresponsible for all aspects of sales, marketing, R&Dand manufacturing operations, includingaccountability for the development andimplementation of corporate and businessstrategy, business development, strategicpartnerships and IP management. Prior to joiningAmkor in 2003, Mr Khaykin was Vice President ofStrategy and Business Development at ConexantSystems and its spin-off Mindspeed Technologies,where he held positions of increasingresponsibilities from 1999 to 2003. Prior toConexant, he was with The Boston ConsultingGroup, a leading international strategy and generalmanagement consulting firm, where he workedwith many European and US firms on a broadrange of business and management issues,including revenue growth strategies, operational

improvement, M&A, divestitures, and turnaroundand restructuring.www.irf.com

Avnet Memec, the highly specialisedsemiconductor distributor of AvnetElectronics Marketing EMEA, adds a newrange of automotive-grade, Hall-effectlinear current sensors from AllegroMicroSystems Europe to its portfolio.Each of the new products consists of a

precise, low-offset, linear Hall sensorcircuit with a copper conduction pathlocated near the surface of the die.Applied current flowing through thiscopper conduction path generates amagnetic field which is sensed by theintegrated Hall IC and converted into aproportional voltage. Device accuracy isoptimised through the close proximity of

the magnetic signal to the Hall transducer.The devices are supplied in a surfacemount SOIC8 package. The leadframe isplated with 100% matt tin, which iscompatible with standard lead (Pb) freeprinted circuit board assembly processes.Internally, the device is Pb-free, except forflip-chip high-temperature Pb-basedsolder balls, currently exempt from RoHS.Avnet Memec operates from 30 offices in17 European countries and representsmajor semiconductor franchises on a pan-European basis. Its many major supplierpartners include Cirrus Logic, Lattice,Marvell, NEC, and Silicon Laboratories.www.avnet-memec.eu

New CEO forInternational Rectifier

AvnetMemecDistributes CurrentSensors fromAllegro

MARKET NEWS 11



http://www.irf.com

http://www.avnet-memec.eu

MiniPack 2 - IGBT Module with Converter Brake InverterAvailable in latest NPT andtrench IGBT technologies

Features• 10 - 30 A, 600 - 1200 V• Insulated base plate (DCB)• Pins suitable for wave soldering• High level of integration (NTC included)• Hiperfast free wheeling• Custom and standard configurations• Assembly clips available

Used in:• AC motor drives:

– Pumps, fans– Washing machines– Air-conditioning systems

• UPS

EUROPE:IXYS Semiconductors [email protected]

USA:IXYS [email protected]

ASIA:IXYS [email protected]

12_PEE_0208:12_PEE_0308 22/1/09 11:28 Page 1




PCIM 2008 13


Get Up-to-Date withTutorials

The PCIM Europe Conference offersa three-day user-oriented programwith renowned experts fromindustry and science. The daybefore the exhibition andconference, a series of tutorials willhelp answer the key questionscurrently being posed in the powerelectronics sector. With ten full daytutorials on Monday 26 May 2008,the conference offers anunparalleled programme. Thetutorials will be led by top expertsfrom the USA, France, Switzerland,Austria and Germany. The followinggives an overview on the powerelectronics related topics.

Higher efficiency powerconversionTutorial 1 held by Ionel Dan

Jitaru, Delta Energy Systems (USA)will present a comprehensiveoverview of the latest techniquesaimed at maximising the efficiency.The first part will focus on thetopology selection, wherein newtopology structures will bepresented. The latest topologiesare developed as a result of thelatest changes in the systemarchitecture and the availability ofdigital control. A special section willbe dedicated to the rectificationtechniques and ‘intelligent’rectification for low and highvoltage application. Another sectionis dedicated to the new magneticstructures for efficiencyoptimisation. The magnetic sectionwill be presented, together with thelatest packaging technologieswhich play a critical role inefficiency optimisation through theminimisation of the parasitic

elements in the circuit and heatmanagement. The last section isdedicated to the digital control anddigital assisted power conversionfor efficiency optimisation. Thisnew section underlines the futureof power conversion using‘intelligent’ power processing forefficiency optimisation. Thepresentation will be highlightedwith design guidance, designexample and experimental results.Mr Jitaru has pioneered several

trends in power conversiontechnologies such as ‘SoftSwitching’, ‘Full integratedmultilayer PCB packaging concept’,‘Synchronized rectification’ and‘Intelligent power processing’.Some of these technologies havebeen covered by twenty-twogranted patents and ten pendingpatents.

Advanced design with MOSFETand IGBT power modulesTutorial 2 will be presented by

Professor Josef Lutz, ChemnitzUniversity of Technology, and Dr.Tobias Reimann, ISLE GmbH,Ilmenau (both Germany). Theprogramme covers PowerDevices/Modules/Reliability (newdevelopments in MOSFETs, IGBTs,freewheeling diodes, modulelayouts, thermal mismatch/stress,power cycling capability, design forreliability); Drive and Protection(principles, failure modes/detection,current, voltage, temperatureprotection); Topology-dependentPower Losses (DC/DC and DC/ACconverters, load cycles, calculation ofheatsink); Device InducedElectromagnetic Disturbance

Parasitics; and Special ApplicationAspects (paralleling and seriesconnection, special effects inZVS/ZCS topologies, specialproblems related to new devicetechnologies, dynamic ruggednessof power diodes).Mr Lutz joined Semikron

Electronics in 1983. First, heworked in the development ofGTO Thyristors, then in the field offast recovery diodes. Heintroduced the Controlled AxialLifetime (CAL) diode, is holder ofseveral patents regarding fastdiodes, and has published 116papers and conferencecontributions. Since August 2001he has been Professor for PowerElectronics at Chemnitz Universityof Technology. Mr Reimannreceived his PhD in 1994 from theIlmenau Technical University in thefield of power semiconductorapplications for hard and softswitching converters. In 1994, hewas one of the founders of theISLE company.

High frequency conductorlosses in switchmodemagneticsTutorial 3 by Bruce Carsten,

Bruce Carsten Associates Inc.(USA) emphasizes an intuitiveunderstanding of AC Skin andProximity Effect losses intransformer and inductor windings.Formulas and approaches areprovided for calculation of ACwinding losses with arbitrarycurrent waveforms. Methods formeasuring AC winding resistanceare discussed, with cautions oninvalid measurements. Myths and

misunderstandings are discussed,including that ‘skin effect’ is thecurrent distribution in an isolatedconductor, that foil and litz wireconductors reduce loss ‘becausethey have more skin area’, and thatlosses are inherently reduced whena solid conductor is replaced by litzwire of the same area. Lossmechanisms unique to planarwinding will be presented.Bruce Carsten has 37 years of

design, development and researchexperience in high frequency andswitchmode magnetics, at powerlevels ranging from 100mW to over10kW and frequencies from up toMHz.

Advanced control techniquesfor switchmode powersuppliesTutorial 4 by Dr. Richard Redl,

ELFI SA (Switzerland) presentsadvanced control concepts forswitchmode power supplies,including single-loop (PWM, rippleregulators) and multi-loop (current-mode, feedforward) analog control,and also digital control. Auxiliarycontrol functions (efficiencyoptimization, balancing paralleledor multiphase converters, overloadprotection, and reducing noiseemission and sensitivity) are alsodiscussed. Emphasis is on practicalconsiderations and on providingguidelines about selecting the bestcontrol technique for anapplication.Mr Redl is a Fellow of the IEEE

and the director of ELFI SA, anelectronics consulting company inSwitzerland, specialising in powersupplies and other power-

Europe’s leading Exhibition and Conference for Power Electronics, IntelligentMotion and Power Quality/Energy Management is on the road to success again.In 2007, the exhibition achieved its largest exhibition space ever with 10,500sqm, but already the figures for this year’s event in Nuremberg (27-29 May2008) are showing an increase.

p13-14 PCIM Report:Layout 1 22/1/09 11:41 Page 13

14 PCIM 2008


conversion equipment, electronicballasts, and integrated circuits forpower management. He holds 22patents, has written over hundredtechnical papers, and co-authoreda book on the dynamic analysis ofpower converters.

Electromagnetic compatibility forhigher frequencies powerdesignsTutorial 5 by Jacques Laeuffer,

Supèlec (France) deals with how tomanage high frequency parasiticresonances just aftersemiconductors commutation, i.e.between MOS capacitance andtransformer stray inductance; howto balance inductances reductionwith capacitances increase; how tochoose and design EMC optimisedpower converters (from 100W upto 100kW), and how to avoidexpensive shielding. Over about1MHz, conventional circuit theorieswith localised constants like‘parasitic capacitances’ or ‘strayinductances’ need to be improvedwith a physical understanding ofthe electromagnetic propagation inand around power circuit.Mr Laeuffer has 25 years

experience in the field of PowerElectronics for various applications,including inverters for radar servocontrols, high frequency resonantconverters, high voltagetransformers for X-ray generators,and automotive drive systems forhybrid vehicles. He has written 74technical papers, and is inventor of27 patents. He received the ‘GrandPrix de l’Innovation’ of PSAPeugeot Citroen for year 2004.

FPGAs in drive technologywith training on Sigma-Delta-ADCsTutorial 6 by Professor Dr Jens

Onno Krah and Rolf Richter coversInverter Design and Basic controlhints for power stages, as well as

applications for Sigma Delta Digitalto Analog Converters. More andmore functions like feedbackprocessing or field busimplementations are realised inField Programmable Gate Arrays(FPGA). Due to the innovationcycles of the semiconductorsuppliers the size and the cost ofthe more and more complex andpowerful inverter systems is notincreasing. The FPGA IntegratedDevelopment Environment –Hands On Training – will includedesign flow, design entry, creating aproject, creating a design using ablock editor and VHDL, constraintentry, timing analysis, andimplementation of a Sigma-DeltaDAC/ADC.Professor Dr.-Ing. Jens Onno

Krah studied electrical engineeringat the University Wuppertal andobtained his PhD 1993. UntilFebruary 2004 he worked astechnical director for DanaherMotion, formerly Seidel ServoDrives. He was responsible for thedevelopment of the DanaherMotion Servo Drives. Since March2004 Professor Krah has beenteaching control engineering at theUniversity of Applied SciencesCologne. Dipl.-Ing. Rolf Richterstudied electrical engineering atthe University of Applied ScienceBielefeld. From 1992 to 2001, hedeveloped High-End processor andcontroller boards at dSPACE GmbHin Paderborn. Since 2001, he hasbeen working as Field ApplicationEngineer at EBV Elektronik inMunich as a specialist forprogrammable logic devices (PLD& FPGA) from Altera.

Practical switching power supplydesignTutorial 7 by Dr. Ray Ridley,

Ridley Engineering Europe (France)covers some of the numeroustopics that a power supply designermust be familiar with. The modernpower supply designer is facedwith a bewildering array oftechnology choices. As a result,many engineers choose designpaths that lead to final productsthat are inadequate for today’sdemands. This seminar will providenew and unique insights thathighlight the best ways to designswitching power supplies.Numerous industry examples arepresented to show how manymodern products are victims of

poor power supply design and howyou can avoid mistakes.Mr Ridley is the president of

Ridley Engineering Inc. in the US,and Ridley Engineering Europe. Heprovides assistance to companiesworldwide in the form ofconsulting, test equipment, designsoftware, and unique hands-onpower supply design courses. Hehas been designing switchingpower supplies for over 28 years.

Application opportunities of SiCdevicesTutorial 9 will cover different

aspects from devices and materialbasics up to application specifictopics by team of SiC specialistfrom Infineon and SiCED. Thetutorial will give an introductioninto SiC power devices in general,highlighting differences to silicondevices with respect to technology,device performance andapplication prospects. Specialattention will be paid tocommercially available devices likeSchottky diodes (300V...1700V)and emerging switching devices.Topics like the cost efficientutilization of SiC devices andreliability aspects will be covered,as well as special features arisingfrom application studies. Finally, anoutlook to the future developmentdirections in SiC technology will begiven, taking into account thecompetitive environment ofadvanced silicon solutions andalternative wide band gapsemiconductors, as well as thefuture role of (high voltage) SiCdevices in power electronics.

IGBT gate drive technologiesFinally, Tutorial 10 by Dr.

Reinhard Herzer and MarkusHermwille, SEMIKRON International(Germany) will coverFundamentals (power controlsystem, inverter principles,methods of potential separation,different applications), PowerDevices (parameter andcharacteristics, parasitics, switchingbehaviour, switching times andlosses), Driver Fundamentals (gatedriver topologies, influence ofdifferent gate driver componentson the switching behaviour,transmission of control signal anddriving energy, transmissionprinciples, galvanic isolation andlevel shift, variants of powersupply: DC/DC converter, bootstrap

power supply, charge pump, gatedriving technologies and differentgate drive circuits), ProtectionTechniques (under voltageprotection, short pulse suppressionand interlock, different kinds ofshort circuit protection, hard andsoft turn-off), or Using IGBT Drivers(input and output signals,dimensioning and design of gateresistors, gate clamping,connection between gate driverand IGBT module, paralleling ofmodules).Mr Herzer studied Electrical

Engineering and, in 1984,receivedhis PhD in the field ofMicroelectronics, and in 1992, hisHabilitation in the field of PowerDevices and Smart Power ICs fromthe Ilmenau Technical University. Hejoined Semikron ElectronicsNuremberg, Germany in 1995 ashead of the MOSFET, IGBT and ICresearch department. Mr Hermwillestudied Electrical Engineering at theUniversity of Applied Sciences inDortmund, Germany. He was thenemployed as Sales Engineer atThomson-CSF, he joined SEMIKRONin 2000 as Product Manager.

Comprehensive conferenceprogramThe conference program

includes more than 120 first-timepresentations delivered byinternational speakers. Fourkeynote papers, Higher JunctionTemperature in Power Modules- a demand from hybrid cars, apotential for the next stepincrease of power density forvarious Variable Speed Drives,Higher Frequencies PowerTransformers Designs,Technologies for PracticalMotor Drive System with MatrixConverter, and Mega-SpeedDrive Systems: Pushing Beyond1 Million RPM, will highlightrecent breakthroughts andupcoming applications. Within thespecial session ‘AutomotivePower’ organised by PowerElectronics Europe, representativesfrom industry will report on theirexperiences and results with powerelectronics for hybrid vehicles.Finally, the Best Paper Award alsosponsored by Power ElectronicsEurope will be presented at theopening ceremony.

AS

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p13-14 PCIM Report:Layout 1 22/1/09 11:41 Page 14

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Reliable Power Electronics forWindmill GeneratorsIn the megawatt range, high-power electronics applications need powerful semiconductors. However, eventhe largest semiconductors available today are still not strong enough for some applications. It is thereforenecessary to connect them in parallel. Dejan Schreiber, Senior Applications Manager, SEMIKRON,Nuremberg, Germany

One possible solution is discussed inthis context: power electronics assembly,IGBT base units containing IGBTs anddiodes, heatsinks, DC-link capacitors,drivers and protection, auxiliary powersupply and a PWM controller (oneindependent unit), arranged into a three-phase inverter. Such units can beconnected in parallel, for example for afour-quadrant drive windmill withpermanent magnet generator and a full-size 4MW converter, which is presentedhere. A method is described of obtaininghigher levels of power in medium-voltagewindmill applications that involves usingline interface connection of variable-speed,medium-voltage PM generators with novoltage and power restrictions, as well asproven semiconductors and components.Basic power electronic units are connectedin series for higher voltages and in parallelfor higher power levels.

Comparison of IGBT efficiency withdifferent blocking voltagesIGBTs are the working horses of power

electronics systems. Today, IGBTs aremanufactured in various voltage classes,from 1200 or 1700V for different industrialapplications, as well as for the medium-voltage classes 3.3, 4.5, and 6.5kV. Whichvoltage class is best suited to high-power

applications? The answer to this questionlies in putting the IGBTs in the largestcasing available in order to obtain inverters.Of course, it is much simpler to simulateavailable power under optimal workingconditions.To do so, the largest standard casing

(IHM, 190mm wide) is taken. The IGBTsare packed into this casing and theoptimal operating regimes defined - VdcDC operational link voltage, Vac AC outputvoltage, a carrier switching frequency Fswof 3.6kHz and best possible coolingconditions. Figure 1 (left) shows thedifferent available power levels,calculated on the basis of the givenparameters.The results show that the maximum

available power using 3.3kV, 1200Aindividual modules would be one half ofthe equivalent power obtained using1.7kV, 2400A IGBTs. The 6.5kV, 600AIGBT modules provide just one quarter ofwhat would be obtained with a 1700VIGBT. The reason behind these results isthe losses that occur in IGBT modules. Ifwe calculate the efficiency of the threeconverters shown in Figure 1 (right) atsame cooling conditions and Fsw =3.6kHz; cos = 0.9 and same module,we can see that the losses have a ratio of1:2:4.

For this comparison, we have used thesame carrier switching frequency. Thisenables us to design inverters withrelatively small filters. A comparisonusing different carrier switchingfrequencies would lead to variations inthe output sinusoidal filters used. Givenall of the above, it can be seen that thegreatest efficiency is accomplished byusing the 1700V IGBT, a standardindustrial product with a very reasonableprice per module.IGBTs for 1700V are packed in various

module casings. For comparison, we cantake the largest single-switch module, theIHM 2400A/1700V, and compare twosuch modules with a dual module ofsimilar size and length, SKiiP1513GB172. Ifthe two SKiiPs are put back to back on oneheat sink, a half-bridge is obtained forcurrents 2 x 1500A = 3000A (casetemperature = 25°C), or 2250A for a casetemperature of 70°C. Two single-switchmodules will provide a half-bridge for2400A. If we compare the results of thecalculations, we can see that the SKiiPsolution provides higher output currentsthroughout the complete range ofswitching frequencies than a standardmodule in the largest available case would(see Figure 2).If a more powerful SKiiP module is

Figure 1: Comparison of output power (left) and efficiency of IGBT converters with different blocking voltages at same cooling conditions and Fsw = 3.6kHz;cosφ = 0.9 and same module

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www.semikron.com POWER MODULES 17


taken, for example the SKiiP 1800A, 1700V,which uses an aluminum nitrate (ceramic)substrate, even more power is availablefrom a three-phase inverter, i.e. 1800kVA(see Figure 3).

Paralleled IGBT modulesNumerous solutions are feasible for the

parallel operation of IGBT modules, i.e. onethree-phase inverter for the entire power.Here the phase leg is constructed withseveral IGBT modules connected in paralleland one powerful driver. Each IGBT modulemust have its own gate resistor andsymmetrical DC link and AC outputconnection [1]; and hard paralleling of three-phase IGBT base units. The whole system iscontrolled via one controller and its PWMsignals. All of the three-phase inverters areconnected to a common DC link voltage.Paralleling is achieved using driver parallelingboards for each individual base unit driver.Slight variations in driver propagation times(less than 100ns) are compensated for withsmall AC output chokes; (<5µH inductance).All of the three-phase inverters runsimultaneously, with the small time delaysthat occur being compensated for withadditional AC chokes. To ensure proper load-current sharing, symmetrical layouts andpositive temperature coefficients for IGBTsaturation voltages are used [2].An other solution as described under

[2] features additional PWM signalcorrection for each base unit. AdditionalPWM corrections are performed to controlprecise load-current sharing in paralleledbase units; parallel operation of severalunits with synchronous PWM and theelimination of circulated current usingadditional sophisticated PWM control [3];or galvanic load isolation for each baseunit. Each base unit supplies power to theload through insulated windings. Eachbase unit has its own controller. PWMs areindependent, non-synchronous, free-

running signals, and each base unit has itsown separate DC link. On the grid side,each base unit has its own sinusoidal LCfilter. Circulated currents between differentDC links do not exist provided the outputsare galvanically insulated. This is theeasiest parallelisation method for standardindependent basic units with standardindependent controllers. A simple designbased on galvanic insulation on thegenerator side is shown in Figure 4.Three 1500kVA four-quadrant drive units

are connected to separate generatorwindings of a permanent magnet windmillgenerator. Each four-quadrant drive is astandard drive with its own generator-sideand grid-side controllers. The purpose of thefourth controller is to provide uniform

generator torque sharing. Should problemsoccur in one of the 4Q drives duringoperation, the remaining drives will continueto operate. The system described is used ina 3.6MW windmill with a PM generator withthree separate windings. The system isdesigned for up to 12 four-quadrant drivesin parallel and for the connection of 12generators or 12 generator windings [4].

Series connection of base unitsWindmill design engineers have a

number of aspects to take into theirdesigns, i.e. high-power wind turbine, lowlosses, variable speed, high degree ofefficiency, use of proven semiconductors,clean sinusoidal line current using a simpleline transformer, good line power factor

Figure 2:Available inverterpower versusswitchingfrequency

Figure 3: Example of a 1800kVA base unit



and low THD, active and reactive powercontrol, modular design to allow for usewith various powers and voltages, quickassembly, high degree of reliability, andlowest possible costs. Best solution is themedium-voltage generator.A medium-voltage generator is a must in

high-power windmill designs of the future.Medium-voltage silicon, however, is notsuitable for such applications. The rightsolution is therefore to connect base unitsin series.An example: a 5MW windmill generator

with 6.3kV rated output voltage has outputcurrents of 3 x 436Arms. The rectifiedvariable speed generator voltage is in therange of 1 to 10kVDC. How can suchvariable voltage be connected to the grid?Each windmill needs to have its own

transformer to allow for connection to thegrid; grid voltage would be in the range of20 to 30kV, which would be thetransformer output voltage. The transformercan be produced with several - in this case10 - three-phase windings, each for 3 x690V, which are used as input voltages.The new medium-voltage windmillprinciple is shown in Figure 5.One base unit, a 600kVA three-phase

inverter, is attached to each three-phasewinding. A fourth IGBT leg can beconnected in front of each base unit. Thisarrangement can be referred to as amedium-voltage cell. All of the cells can beconnected in series, as shown in Figure 7. Ifthe IGBT switch of the fourth leg isswitched-off, the generator DC current willcharge the cell DC-link voltage. The three-phase inverter on the cell-grid sidedischarges, controlling its own DC-linkvoltage. For 3 x 690VAC voltage, the DC-link voltage will be 1050V. Ten base units inseries can produce a Counter ElectroMotive Force (EMF) of up to 10 x1050 =

10.5kV. The voltage remains balanced withthe rectified generator voltage. If thegenerator speed is lower, the generatorvoltage will be lower, too. For this reason, tocontrol the rectified DC current, which inturn means controlling the generatortorque, some of the cells have to bebypassed. If five cells are bypassed, theremaining counter EMF is 5 x 1050 =5.25kV. Bypassing more cells will increasethe DC current and the generator torque.Bypassed cells can deliver full reactivepower to the grid. If one cell is notfunctioning, it will also be bypassed. Themaximum cell DC link voltage is 1200V. Forthis reason, even as few as nine cells inseries can carry the rectified generatorvoltage of up to 9 x 1200V = 10.8kV.

ConclusionHigh-power applications use numerous

IGBT modules. It is far better, however, touse more switches with separate controls,e.g. several units connected in parallel or inseries rather than one large single unit. Theadvantages are as follows: good line power

factor and low current THD with a lowerswitching frequency and fewer passivecomponents, modular design that issuitable for various powers and voltages, aswell as quick assembly, use of provensemiconductor elements, greater efficiency,high degree of reliability, and extremely lowcosts per kW.

References[1] D. Srajber ‘IGBT with

Homogeneous Structure used for HighPower Converter Design’ PCIM 1991Nuremberg Germany[2] SEMIKRON Application Notes

‘SKiiP Parallel Operation of ‘GB’-typeSKiiP Systems’http://www.neu.skd.semikron.com/internet/webcms/objects/pdf/Application_notes_SKiiP_engl.pdf[3] D. Boroyevich: ‘MODELING AND

CONTROL OF PARALLEL THREE-PHASEPWM CONVERTERS’[4] The Switch, www.theswitch.fi[5] United States Patent US 6,680,856

B2

Figure 4: Threeindependent 4Qdrives in parallel withseparate motorwindings, the drivecan operate with oneor two drives inparallel

Figure 5: Cell-based medium-voltage windmill


POWER MODULES www.semikron.com18



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New Intelligent Power ModuleSeriesContinuous market growth of general purpose inverters and servo drives is boosting the demand ofIntelligent Power Modules (IPM). The new IPM ‘L1-Series’ featuring high speed and low loss IGBT chipswith full gate CSTBT and is mechanical compatible to the existing L-Series IPM. Prasad Bhalerao andRobert Wiatr, Mitsubishi Electric Europe, Ratingen, Germany

The popularity of IGBTs in a wide rangeof industrial power conversion applicationsis a direct result of the technologicaladvances that have been made. Thedevelopment over the last few years hasmade the IGBT a power switch with ruggedswitching characteristics, low losses andsimple gate drive.

Advances in module designThe existing L-Series IPM family (50 to

600A/600V, 25 to 450A /1200V) useswell-proven 5th generation CSTBT IGBTchip and is designed for optimizedswitching and conduction losses forreduced EMI performance up to 20kHz.The series is equipped with newlydeveloped protection and control ICmaking easy interface with supplier circuitry.Using the advantage of existing L-Series

package, L1-Series incorporates new fullgate CSTBT IGBT chip for improvedelectrical performance. The new L1-SeriesIPM family includes 50 to 300A/600V and25 to 150A/1200V compatible L-SeriesIPM package and also introduces new 7 in1 small package (90mm x 50mm) for50A/600V and 25A/1200V range. Table 1shows the line up and package outline ofnew L1-Series IPM for 600 and 1200V. L1-Series is suitable for a wide range ofapplications such as servo drives, airconditioners and standard motor control.Figure 1 shows the difference of CSTBT

structures in L-Series and L1-Series IPM. Theinactive plugging cell merge into activeparallel gates in full gate CSTBT gives bettertrade-off performance (VCE(sat)and E(off)). AlsoVCE(sat)of 1.9V of L-Series IPM is furtherreduced to 1.75V (@ Tj = 125°C) in L1-Series by keeping Eoff almost at the samelevel. The total switching losses in L1-Seriesis reduced by 15%, as compared to L-Seriesat comparable conditions. Table 2 shows thecomparison of characteristic data of L-Seriesand L1-Series IPM. It can be seen that powercycling is increased by almost 63% by newwire bond technology. Figure 2 shows a losscomparison of L-Series 75A/1200V andL1-Series (conditions: Vcc = 600V, VD = 15V,

www.mitsubishichips.com POWER MODULES 21


Table 1: L1-Series IPM product line-up

Figure 1: New fullgate CSTBT structureof L1-Series IPM

Table 2: Comparisonof electrical data ofL-Series and L1-Series IPM(75A/1200V)

p21-22 Feature Mitsubishi:Layout 1 22/1/09 11:43 Page 21

http://www.mitsubishichips.com

IL = 33Arms, fc = 5kHz, p.f = 0.8, 3 phasePWM).

ConclusionWith the improved electrical

performance at the same time keepingthe high level of mechanical compatibilitywith existing L-Series IPM, new L1-SeriesIPMs offer a better product for servo,air-conditioning and standard motor controlcustomers. Such improvement in IPMtechnology will get more attention andapproval from the market in order toreduce the size, cost and time of the entiresystem.

22 POWER MODULES www.mitsubishichips.com


Figure 2: Loss comparison of L-Series 75A/1200V and L1-Series

Advances in power semiconductorsImprovements in the IGBT performance have generally been achieved by finer surface patterns and shallowdiffusion technologies. But this conventional structure has four major resistance portions – MOS-channel, JFET, n-layer and PN-junction. The voltage drop of JFET and n- layer occupies more than 50% of the total saturation voltageVce(sat). A significant performance gain was obtained by moving from planar IGBT structures to trench gate cellstructures for the IGBT combined with a new carrier lifetime control process. Due to their high internalamplification, VGE/IC, trench gate IGBTs show increased natural short-circuit currents. In addition, the high cell

density trench gate devices have an increased gatecapacitance, resulting in higher power requirements forthe gate driver. For heightened switching frequenciesspecially, this fact has to be considered for gate drivedesign.To surmount these drawbacks, still keeping the

significant advantages of trench gate IGBTs, the CarrierStored Trench Gate Bipolar Transistor (CSTBT) has beendeveloped, which yields low on-state voltage comparedwith conventional IGBTs. Key technologies of this CSTBT aretrench gate and carrier stored layer. Because the currentthrough the narrow JFET area causes voltage drop of JFETportion, CSTBT is removing the JFET area completely bytrench gate structure. The current can flow from the MOS-channel to the n- layer directly. As a result, CSTBT has noJFET voltage drop.Secondly, the current through the resistance of n- layercauses voltage drop in n-layer. It is necessary to increase thecarrier density in n- layer in order to decrease the resistanceof n- layer. However, real carrier density in n- layer hassome local distribution: at collector side the carrier densityis rich, whereas at emitter side it is lean. Therefore, the mainvoltage drop in n- layer is caused by emitter side lean area.So it is very effective to increase the carrier density ofemitter side area in order to decrease the voltage drop in n-layer. The carrier stored layer is employed nearby theemitter side n- layer. This carrier stored layer can interceptthe escaping carriers like a ‘water dam’. Thus, the carrierdensity at the emitter side of n- layer is increased, the totalresistance of n- layer is decreased, and consequently thevoltage drop in n- layer is reduced. Furthermore, increasedcarriers in n- layer by carrier-stored layer fasten the turn-onswitching ability. So CSTBT can reduce not only static losses,but also switching losses.

AS

Structure of planar IGBT

Structure of CSTBT

p21-22 Feature Mitsubishi:Layout 1 22/1/09 11:43 Page 22

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System-Oriented IGBTModule forHigh Power InvertersAlthough IGBT modules with blocking voltages up to 6500V are available today, there are many applicationsthat require the design of inverters with ratings close to or even beyond 1MVA with 1200V or 1700Vdevices. The recently introduced PrimePACK module housing, together with the new IGBT4 technology in1200 and 1700V, fits this market by enabling a cost-effective and modular inverter design. PiotrLuniewski and Uwe Jansen, Infineon Technologies AG, Warstein, Germany

Applications like variable speed drives,UPS-systems, heavy-duty commercialvehicles, as well as grid connection ofmicroturbines or renewable energysystems, like windmills or large solarfarms, often imply system restrictions thatdo not allow designs with higher voltagelevels. A converter design faces at leasttwo problems: power part volume andefficiency. When a converter dedicated tohigh-power application is considered, thenin most cases the power electronicequipment, consisting of IGBT modules,DC-link capacitors and heatsink, is usuallyinstalled in control cubicles having aheight of 1.80 to 2.20m, airflow frombottom to top and being placed in front ofa wall. An alternative approach uses rackswhere several heatsinks placed aboveeach other are cooled by a horizontalairflow entering the cabinet at the frontand leaving it at the back. In both cases,the most important dimension for the enduser is the width of the cabinets.

Reducing the inverter sizeTo limit overall equipment size, it is

therefore advantageous to use a heatsinkas long and deep as possible, but withlimited width. Hence, a PrimePACKmodule with narrow and long baseplatehelps to achieve the right heatsinkdimensions and proper heat distribution.Further reduction in heatsink volume ispossible by operating this module withextended junction temperature Tvjop =150°C. Figure 1 shows that increasingoperating junction temperature is a muchmore useful means to increase powerdissipation than to increase heatsink sizesignificantly beyond module footprint.Converter efficiency is mainly

determined by the semiconductortechnology used for IGBTs and diodes.Hence, in recent years much effort hasbeen spent in tailoring semiconductortechnology to the different applicationsand power levels. To meet more recent

growing requirements for ‘EnergyEfficiency,’ the PrimePACK module isequipped with the new Trench-/Fieldstop IGBT4 generation. Thus, themodule family comes as a productbasically dedicated to two inverterpower levels: medium (E4) and highpower (P4) in 1200V [1] and 1700V

class. Major focus has been set onfurther reduction of the forward voltagedrop and switching losses. However,especially in high power applications,low dynamic losses are not the maintarget. To cope with over-voltages andEMI, appropriate controllability and acertain softness during module

Figure 1: Power dissipation of a 150mm x 150mm module at different junction operating temperatures

Figure 2: Flexible driver system consisting of MA300Exx, 2ED300E12-SFO and 2ED300C17-S for 1200and 1700V PrimePACK modules

p24-25 Feature Infineon:Layout 1 22/1/09 11:44 Page 24

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www.infineon.com POWER MODULES 25

switching is required and seen as maindevelopment target [2]. Thanks tovarious current ratings, the PrimePACKmodules provide a good match toconverters with different power rangewithout changing the module housing.As most of the converters consists of

several branches where each one has twoIGBTs in series, the PrimePACK module isin half-bridge configuration together withFWD diodes embedded in one housing.This type of internal layout andconnections reduces stray inductances incommutation loop compared to legscomposed from single modules.

Increasing output powerIncreased power of the inverter system

can be realised by parallel connection ofsmaller inverters or by parallelingmodules in one inverter design. The longand narrow module shape and the half-bridge configuration are especiallybeneficial where paralleling modules inone inverter is preferable.Modularity of the power inverter system

on one hand is given by system orientedmodule design, but on the other hand, theIGBT driver must support the flexibilitygoals. Efficient use of modules in parallelconnection with optimised current balancerequires applying a suitable IGBT driverapproach [3]. Figure 2 shows an exampleof where a driver system can be used for1200V as well as for 1700V PrimePACKmodules with minor changes. This driverkit is suitable for driving up to threemodules in parallel. In any case, oneEiceDRIVER 2ED300C17-S drive and one2ED300E17-SFO adapter board isnecessary. The number of module adapterboards MA300EXX is always the same asthe number of modules [4, 5].In a converter requiring only one high

power module, modularity in paralleloperation is not needed and the drivingsystem can be optimised, resulting inreduction of cost and volume. The PCBdriver designated 2ED250E12-Femploying an EiceDRIVER-IC 1ED020I12-F [6] and dedicated to the 1200V devicesof the PrimePACK family is depicted inFigure 3. Thanks to the CorelessTransformer technology [7] and protectionfunctions implemented in the design, the2ED250E12-F driver complements thePrimePACK module as a building blockcomparable to an IPM (Intelligent PowerModule) in half-bridge configuration.

ConclusionPrimePACK modules today are available

in 1200 and 1700V class, various currentratings and two different IGBT technologies.This approach makes these modulesmechanically universal and electricallysuited for many high power applications.Finding a perfect match to final design byappropriate trade-off between static anddynamic loses is additionally supported bya modular driver approach [3].

References[1] M. Baessler, et. al.: 1200V IGBT4

Low and Medium Power – Chipsdesigned to the Needs of theApplication, PCIM Europe, 2007

[2] M. Baessler, et. al.: 1200VIGBT4 –High Power– a newTechnology Generation withOptimized Characteristics for HighCurrent Modules, PCIM Europe, 2006

[3] P. Luniewski, et. al.: Benefitsof System-oriented IGBT Module Designfor High Power Inverters, EPE 07

[4] AN-2007-06, MA300E12/MA300E17 Module Adapter Board forPrimePACK IGBT Modules,www.infineon.com

[5] AN-2007-05, 2ED300E17-SFOEvaluation Board for 2ED300C17-S /-ST IGBT Driver, ww.infineon.com

[6] Infineon Technologies AG.: Targetdatasheet Version 1, EiceDRIVER,1ED020I12-F, Single IGBT Driver IC

[7] A. Volke, at. al.: IGBT/MOSFETApplications based on CorelessTransformer Driver IC 2ED020I12-F,PCIM Nuremberg, 2004

Figure 3: The2ED250E12-Fevaluation driverboard for 1200Vsingle PrimePACKmodule

p24-25 Feature Infineon:Layout 1 22/1/09 11:44 Page 25



26 CURRENT SENSING www.raztec.co.nz


Current Sensor Selection forDemanding ApplicationsFollowing on from the general approach we adopted in PEE 8-2007, we now concentrate our attention onthe three principle technologies used where accurate, reliable and cost-effective current measurement isrequired. With this article we will restrict current sensor types to the three major types, namely shunts withand without galvanic isolation, open-loop hall-effect current sensors and closed-loop hall-effect currentsensors. Warren Pettigrew, CTO Raztec Sensors, Christchurch, New Zealand

At this point, we should now analyse themajor aspects affecting current sensorperformance that should be consideredwhen identifying the most suitablesensing technology for a givenapplication.

Effects of temperatureMaintaining accuracy over the automotive

temperature range of -40 to 125°C can bea challenge for a number of reasons. Justabout everything drifts with temperature!Additionally, the failure rate of many

components accelerates at hightemperatures, particularly if there is significantself-heating in the device. Closed loopsensors (Figure 1) have considerable self-heating which severely restrict theirapplication at high temperatures. In fact, veryfew closed-loop sensors are available with a125°C rating.Shunts (Figure 2) also have

considerable self-heating, particularly athigh current, and if the shunt resistance ishigh so as to give a good signalamplitude. This can lead to considerablevariations of resistance with current.Additionally, unless materials are verycarefully selected and temperaturegradients are minimised, thermoelectricvoltages can completely distort lowcurrent readings. Ultimately, it isthermoelectric generated voltagescombined with input offset voltage drift ofthe interface amplifier that limits the lowcurrent measuring capability of a shunt.

Open-loop sensors (Figures 3 and 4)are also not without their problems eitherat high temperatures or, moreimportantly, temperature shift. Providedthe primary conductor is appropriatelyproportioned, open loop sensors haveinsignificant self-heating with low

frequency current flow, but theirperformance may change withtemperature. These sensors are prone todrift of offset and gain, but temperaturestable devices are available. However, anopen loop sensor is unlikely to match thegain stability of closed loop.

Figure 1: Closed loop current sensor operation

Figure 2: Shunt with four terminals

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www.raztec.co.nz CURRENT SENSING 27


Offset stabilityThe suitability of a sensor to measure

small currents accurately (as well as highcurrents) is dependant on the stability ofthe offset voltage.

As mentioned above, temperature

changes cause offset

shift, but a significant contributor is shiftsdue to remanence effects in the magneticcircuit of the sensor. Reasonably goodmaterial can cause a 0.5% shift of outputafter a significant current excursion. Thegreater the excursion, the greater the shift

of output. Very special material may betwice as good and leave 0.25% ofremanent shift. Both open and closed-loopsensors are equally affected by remanence.Only an air circuit exhibits zero remanence.

But sensors that don’t use fluxconcentrators without suitable shielding arevery vulnerable to stray magnetic fields.Even the earth’s magnetic field can looklike 0.4A. Shifts due to nearby solenoidscan be very large, as will the influence ofnearby current carrying conductors.

Shunts can exhibit variable offsets fromthermo-electric effects due to temperaturegradients in the shunt or its interfacingcircuitry, which certainly includes itsamplifier and A/D converter.

Dynamic rangeThe upper limit of a closed loop sensor

is limited by the current rating of thecompensating winding. This may have ahigh short-term rating, but thermal timeconstants are likely to be fast and thewinding is a significant heat generator.The lower limit is set by remanentvoltage.

Open loop sensor span may be limitedby either core saturation or magnetic fieldsensor saturation. Ferrite cores have alower saturation than iron based coreswhich limit their usefulness to about180AT. Current rating is tailored by alteringthe magnetic circuit reluctance by alteringthe width of the magnetic sensor air gap.Materials with high saturation fluxdensities may be selected, but these tendto have high remanence. Additionally, ironcores exhibit considerable heating withhigh frequency (>20kHz) current flow.Ferrite is much superior in this regard. Thelower practical limit again is set byremanence and possibly also by thermallyinduced null drift. A dynamic range of200:1 is very practical for open andclosed-loop sensors.

The upper current rating of shunts is setby their heating. Heating is proportional tothe shunt resistance. But the signal tonoise ratio and precision to a large extentis also proportional to the resistance.Therefore, the greater the requiredprecision, the greater the heat generated.The lower limit is set by thermoelectricvoltages, input offset drift and noise. Apractical dynamic range for shunts wouldbe 1000:1, but this is dependant on anumber of factors.

This dynamic range can be matchedby coreless open-loop high (~1500A)current sensors that incorporatemagnetic screening. These devices arelargely immune to remanence effectsand offset drift can be managed down tolow levels.

Also, in practice the dynamic range of a

Figure 3: Corelessopen loop currentsensing

Figure 4: Open loopcurrent sensoroperation



28 CURRENT SENSING www.raztec.co.nz


sensor is governed by the signal to noiseratio. This is especially true in highfrequency circuits where noise filteringcould kill the frequency response. Forexample, if a 10,000:1 dynamic range wasrequired and the maximum voltage swingwas 2V, 0.2mV must be sensed reliably.This could well be a challenge in apractical environment where noise levelscould be in the order of hundreds ofmillivolts.The author of this article has recognised

the need for a practically priced sensorwith a wide dynamic current range andwill describe a solution in a followingarticle. Such devices are particularlyrelevant to accurate and reliable batterymanagement.

Frequency responseThe frequency response of open loop

sensors has been traditionally limited toabout 20kHz, but this does not have tobe the case. It is possible tomanufacture sensors that respond tofrequencies to 350kHz. The limitation isnormally the hall element bufferamplifier. It is relatively easy to achievegood (~100kHz) frequency responsefrom closed loop sensors byincorporating their inherent currenttransformer. The closed loop sensor iseffectively a CT with the DC offsetvoltage added.The frequency response of a shunt is

dependant on its inductance; this beingproportional to its length. High frequencycurrents induce Ldi/dt effects which caneasily swamp the I x R voltage. If this noiseis filtered, the frequency response couldwell be compromised.

Just as shunts are vulnerable to di/dteffects, open and closed-loop sensors arevulnerable to dv/dt effects. Unless carefullydesigned and electrostatic screening isimplemented, switching noise can swampsensor output – particularly if switchingvoltages are high.These problems can be alleviated

somewhat with digital systems. The D/Aconversion can be implemented away (intime) from the power bridge switchingpoint.

Destructive overload capabilityOpen loop current sensors excel with

this quality. The rating is purely the rating ofthe conductor passing through the device.The provision of adequate apertures is nota significant design challenge.Closed loop sensors are not quite as

good, as they absorb significant quiescentcurrent when the primary current is high.This generates appreciable self-heating, butthey are immune to short duration highcurrent transients.High (fault) currents can easily damage

shunts. They are constructed like a fuse.Also, a thermal transient could alter theircalibration.

SizeFor currents above about 50A, open-loop

sensors become smaller than shunts. Oftenthe size is defined by creepagerequirements for the particular voltagerating. Closed-loop sensors are always alittle larger due to the bulk of the includedcompensating winding.

PriceThe stand-alone cost of a shunt is

generally less than other DC capablesensing technologies. However, if we takeinto account the cost of interfacingdevices and components necessary togive necessary common-mode rejectionor galvanic isolation, then shunts maywell not be the cheapest option. Openand closed loop sensors can generally‘talk’ directly to an A/D or analoguecircuitry. Some closed loop sensors dorequire a ballast resistor. Due to the costof the compensating winding and itsdriver, closed-loop sensors will always bemore expensive than open-loop for thesame size.

ConclusionAs illustrated by Figure 5, there is at

present no one technology that issuitable for accurately providing thewide range required by particularlydemanding applications such as highpower battery management... but withrecent developments, all of that isabout to change. It is often not easy todecide the most appropriatetechnology. It may be necessary to dotrial designs incorporating eachtechnology before a conclusive decisioncan be made. Hopefully, this article canhelp a little with the process. It may bethat none of the technology isappropriate. In this case, it may be bestto approach a specialist supplier. Theymay well be able to help with a customsolution.

LiteratureSelecting the Most Effective

Technology, Power Electronics Europe8/2007, pages 27 – 31.

Figure 5: Typical current ranges for single devices of each current sensing technology



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30 INVERTER DESIGN www.avagotech.com/Optocouplers


Gate Drive Optocoupler SimplifiesInverter DesignReplacing conventional single and multi-speed electric motors with semiconductor-based variable-speeddrives offers significant energy savings. A growing number of engineers choose to use integrated gate driveoptocouplers in their inverter designs. First of all, integrated gate drive optocouplers provide both levelshifting and reinforced (safe) isolation at the interface between the power stage and the control circuitry.The new ACPL-H312 integrated gate drive optocoupler is a basic building block for all kinds of inverters.Erik Halvordsson, Avago Technologies, Böblingen, Germany

As an effect of high energy prices andincreased attention to environmentalissues, the market for energy-saving or‘green’ technology is soaring. Replacingconventional single- and multi-speedelectric motors with semiconductor-basedvariable-speed drives offers significantenergy savings and a return on investmentwhich can readily be seen in the electricitybill. By introducing the same type oftechnology into cars (hybrid electricalvehicles), the automotive industry is able tosave 20 to 30% on total fuel consumption.On the supply side of the energy equation,semiconductor-based inverters are enablingefficient conversion of green energy, forexample solar or wind energy, into electricalpower. In the examples mentioned above,the investment in new technology is offsetby a savings in energy consumption. Forsuch investments to make sense, it iscritical to keep maintenance costs as low aspossible. Therefore, producers of drives arechallenged to provide smaller and morefeature-rich products, while maintaining orimproving the overall system performanceand reliability.

Reduced footprintThe new ACPL-H312 integrated gate

drive optocoupler is a smaller version ofthe well-known Avago HCPL-3120 (seeFigure 1), a basic building block for all kindsof inverters. Providing the same outputcurrent (2.5 A), but packaged in a‘stretched’ SO-8 package, the new devicesaves 40% on board space, compared tothe previous DIP-8 version, while providingthe same isolation properties. The supplycurrent needed to power up the outputside is specified at 3mA maximum,allowing for a low cost bootstrap powersupply.

The ACPL-H312 contains a GaAsP LED.The LED is optically coupled to anintegrated circuit with a power output stage.These optocouplers are ideally suited for

driving power IGBTs and MOSFETs used inmotor control inverter applications. Thehigh operating voltage range of the outputstage provides the drive voltages requiredby gate controlled devices. The voltage andcurrent supplied by these optocouplersmake them suited for directly driving IGBTswith ratings up to 1200V/100A. For IGBTswith higher ratings, the ACPL-H312 seriescan be used to drive a discrete power stagewhich drives the IGBT gate.

A fundamental strength of optocouplersis their ability to suppress common-modenoise transients. A power inverter of thetype shown in Figure 2 is an applicationwhere such transients exist naturally. Thehalf-bridge configuration can, for example,be a part of a three-phase motor drivewhich converts the high voltage DC linkinto an alternating (AC) current byswitching the power transistors on and offin a synchronised manner. The control

Figure 1: ACPL-H312 (right) next to HCPL-3120

Figure 2: Half-bridgepower inverter

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www.avagotech.com/Optocouplers INVERTER DESIGN 31


circuitry and the gate drive optocouplers onthe isolated side are all connected to thesame ground. On the power side, however,the ground of the high side (upper) gatedriver is actually floating, connected to thesource of power transistor A1. Throughswitching the power transistors on and off,common-mode transients (of thousands ofvolts per microsecond in typicalapplications) are created between thecontrol side and the power side in thisapplication. Such common-mode transientscould potentially cause an erroneous turn-on of a power transistor which, in turn,could cause permanent damage to thedrive. The performance in terms ofcommon mode transient rejection of thegate drive stage is therefore directly linkedto the reliability of the inverter.Optocouplers such as the ACPL-H312

outperform other technologies in terms ofcommon-mode transient rejection. A goodoptocoupler design minimises thecapacitive coupling between the input andthe output sides and also minimises theadverse effects of leakage currents thatflow across the isolation barrier. One reason

is that by using optical coupling technology,the physical separation distance at thesignal coupling interface (inside thepackage) can be kept as wide as possible.The large separation distance andproprietary packaging technology providesa very low parasitic capacitance across thedevice.In addition to the wide internal

separation distance, optical isolationtechnology has the advantage that agrounded Faraday shield can be deployedto cover the receiver IC. The Faraday shieldwill divert transient currents flowing fromthe input side directly to the output groundto prevent the gate drive IC from turning ondue to leakage currents flowing from theisolated side. On the input side, there areseveral ways of designing LED drivecircuitry that ensures that the LED is kept inits desired state. For example, by using twoLED resistors instead of one (see Figure 3),the system is made less sensitive tocommon-mode transients. This subject isfurther discussed in data sheets andapplication notes published on the Avagowebsite. Figure 4 shows a typical

application circuit with negative IGBT gatedrive.

ConclusionAvago is developing, producing and

continually improving LEDs for use inoptocouplers. Concerns are sometimesraised that light output degradation of theLED could cause devices to stopfunctioning after a certain time in use.Indeed, high temperatures and drivecurrents will have an impact on lightoutput – but it is important to stressthat the recommended operating conditionsin datasheets have significant guard bandsto ensure that this will not happen inpractice. In addition to the guard bandedspecifications, the quality of the LEDs aremonitored and stress tested at extremetemperatures and drive currents. LEDdegradation is not likely to cause problemsin real applications.The new ACPL-H312 integrated 2.5A

gate drive optocoupler will enable powerelectronic designers to shrink their PCBlayouts without compromising systemperformance or isolation properties.

Figure 3: Common-mode transient suppression

Figure 4: Typical application circuit with negative IGBT gate drive

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32 THERMAL MANAGEMENT www.ceramtec.com


Ceramic Heatsink ProvidesInnovative Thermal ManagementA new ceramic technology offers an innovative solution for thermally sensitive components and circuits,thanks to its excellent thermal conductivity and stability characteristics and its compact form. CeramCool isthe ideal heatsink for high-power semiconductors where it demonstrates its ability to handle high powerpeaks. Alfred Thimm, Service Center Design, CeramTec AG, Plochingen, Germany

Heat-sensitive semiconductorcomponents are often mounted ontosubstrates. These substrates need toprovide electrical insulation while, at thesame time, ensuring adequate thermalconductivity. The result is often a kind of‘sandwich’ with multiple layers made fromdifferent materials, which simultaneouslytranslates into numerous production steps.Each layer is a potential risk and poses anadditional obstacle to thermal conductivity.CeramCool transforms the substrate into aheatsink itself. The difference is readilyvisible in this high-power LED example (seeFigures 1 and 2).

Long life through excellent thermalmanagement

CeramCool is made from ceramicmaterials such as 450MPa high bendingstrength material Rubalit 708 (with 96%Al2O3), smooth surface Rubalit 710 (with>99% Al2O3) or high thermalconductivity material Alunit AlN(180W/mK). These materials have athermal expansion coefficient (TCE) thatis close to semiconductor materials.Especially Alunit® has a TCE of4.6ppm/K (RT–300°C) that comes veryclose to Si of 4.7ppm/K. In common thematerials possess excellent electricalcharacteristics (breakdown voltage>20kV/mm at RT, specific resistance>1014Ω*cm) and good electromagneticcompatibility.

At the same time, they are waterproofand corrosion-resistant. CeramCool canbe exposed directly to the atmosphereeconomizing on additional insulation,cooling systems etc. The simplifiedconstruction (without glues, insulationlayers) combined with a direct andpermanent bond between the high-power LED and CeramCool heatsink

create good thermal conductivity andelectrical isolation for the entireassembly. Secure thermal managementincreases component life and stabilisesfor example the LED’s colour renderingindex.

Cool LED and hot heatsinkThe Fraunhofer Institute in Nuremberg,

Germany, compared two heatsinks of thesame geometry with regard to theirsurface temperature - a typical aluminiumfin cooler with a glue bonded chip versusCeramCool made of Rubalit or Alunit withmetalisation pad and directly solderedLED. The contrasting images make themost essential thing clear, even if not atfirst sight: The aluminium heatsinkremains relatively cool, but the chipreaches a maximum temperature of169°C (Figure 3). The adhesive layerrequired for the aluminium assembly isblocking heat dissipation. In contrast, theceramic heatsink becomes hot anddissipates the resulting heat over itssurface (Figure 4). The reason is simple,the LED chip is directly and reliablybonded to the electrically insulating

Figure 1: Typical LED system with multiplelayers and different thermal coefficients ofexpansion (TCEs), potential risks aredelamination, corrosion, and degradation

Figure 3: Aluminiumcooler remains cooloverall, but the chipis getting hotter andhas a maximumtemperature of 169°C(Source: FraunhoferInstitute)

Figure 4: The ceramicheatsink is gettinghotter and dissipatesthe heat coming fromthe chip, leaving theLED cooler at 82°C(Source: FraunhoferInstitute)

Figure 2: Simpler and smaller LED System withCeramCool and direct metal-to-metal connection

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CeramCool using only metals. The result isconvincing. The chip’s maximumtemperature is with 82°C half that of thealuminium assembly. If the heatsinkbecomes hot it takes the burden off theLED and does exactly what it is made todo, namely cooling of the criticalcomponents.Figure 5 shows the starting phase. What

happens to the chip? With CeramCool itgives off its heat to the ceramic heatsinkimmediately and without barriers. Proof ofthe system’s high dynamics: after 0.1sCeramCool reaches a temperature of only45°C versus approximately 60°C with

aluminium. This results in great loadreduction while considerably increasingcomponent life.

Heatsink acts as circuit carrierCeramCool can be coated directly with

proven thick-layer technologies with its highadhesion force (WNi(Au), AgPd, Au, DCB,AMB...) or thin-film processes with itssmooth surfaces (allowing precise lightangles). A finish for better soldering can beobtained using electroless nickel or gold(immersion or cathodic deposition).The possibility of metallisation makes the

whole surface of the heatsink useable as a

circuit carrier which can be firmly packedwith LEDs and drivers on customised circuitlayouts - while providing reliable electricalinsulation (Figure 6). The process can besimplified by bonding the chip directly ontothe specially designed CeramCool metallicsurface - chip on heatsink!

ConclusionCeramCool has been received the

Manufacturing Excellence Award 2007 forthe best product innovation, the ceramicheatsink for high-power electronics. One ofits important features is its high degree offreedom of design. One the one hand, itcan be manufactured according tocustomer specifications for example withindividual forms, with or withoutmetallisation, with sizes between 1 and200mm and a thickness from 0.05 up to50mm (Figure 7). On the other hand,product designers obtain a new level ofdesign freedom for their final product. Thisis because the simplified construction, theability to use the heatsink as a circuit carrierand efficient thermal management make itpossible to achieve miniaturisation.

Figure 7: CeramCool in different constructionand metallisation forms

Figure 5: After 0.1s CeramCool reaches atemperature of only 45°C versus approximately60°C with aluminium(Source: Fraunhofer Institute)

Figure 6: A customerspecific layout isapplied on thesurface and packedwith components,qualified processesand RoHS conformingmaterials can be used

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34 PRODUCT UPDATE


ProdHead 1Prod text no indentProd text indent

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www.ne1.com

Prod head 2 Current SenseTransformers

N-Channel 3AMOSFET Driver

Eighth Brick Provides 93%EfficiencyPower-One’s new eighth-brick DC/DC converterSQE48T10120 provides 12Vat 10A at 93% efficiency.Other features include low-profile height (9.5mm),wide-input-range (36 to75VDC) operation, an on-board input differential LCfilter, remote sense, andstart-up into pre-biasedloads.The device is protected

against input under-voltage, over-temperature, output over-current, and output over-voltage. Regulatory agencyapprovals include UL60950, including basic insulation requirements. The product is designed tomeet Class B conducted emissions, per FCC and EN55022, when used with an external filter.

www.power-one.com

Three-phase 600V IC FeaturesExtra Channel for PFC

International Rectifier offersthe IRS26302D protected600V three-phase gate driverIC with ground faultprotection. The IC has aseventh gate drive channelfor a power factor correction(PFC) switch or inverterbrake, making it well-suitedto medium power appliancemotor control and manyother general-purpose three-phase inverter applications.The IC integrates powerMOSFET/IGBT gate driverswith three high-side and

three low-side referenced output channels to provide 200mA/350mA drive current at up to20V MOS gate drive capability operating up to 600V. An additional low-side driver isprovided for a PFC switch or inverter brake. The IC incorporates negative versus immunitycircuitry to protect the system from catastrophic events that can be seen during high-currentswitching and short-circuit conditions in addition to ground fault protection, critical featuresfor industrial systems that require high levels of robustness and reliability.Also, an advanced input filter has been integrated to reject noise and reduce distortion,

improving system performance in many motor control applications. To address the needs ofspace constrainted applications the IRS26302D features integrated bootstrap functionality,reducing the bootstrap power supply from six components to three, while providing VBSover-voltage protection for the system through the use of additional integrated intelligentprotection circuitry.

www.irf.com

Murata Power Solutions offers three new surface-mount current sense transformers (5300, 5400and 5500 series) which can be used to measureor monitor AC currents in high frequencyapplications such as SMPS, motor controllers, andelectronic lighting ballasts. Designed to measure ACcurrents up to 10A, the 5300 series comprises 10different devices with a primary current rating to10A and between 20 and 200 turns, dependingon the resolution of current measurement desired.A primary to secondary isolation of 500Vrms in anindustry-standard footprint helps simplify theirinclusion into existing product designs.

The 5400 and 5500 series are designed tomeasure AC currents up to 15A and are availablewith 50, 100 or 200 turns. The 5400 seriesprovides 1200Vrms primary to secondaryisolation. The 5500 series is offered in a lowprofile package, with a primary to secondaryisolation of 1000Vrms.

www.murata-ps.com

Linear Technology offers the LTC4444, a high-speed, high input supply voltage (100V)synchronous MOSFET driver designed to driveupper and lower power N-Channel MOSFETs insynchronous rectified converter topologies. Thisdriver, combined with power MOSFETs andDC/DC controllers, form a completesynchronous converter. This driver can sourceup to 2.5A with a 1.2Ω pull-down impedancefor driving the high-side MOSFET and source 3Awith a 0.55Ω pull-down impedance for the low-side MOSFET, making it ideal for driving highgate capacitance, high current MOSFETs.The LTC4444 can also drive multiple MOSFETs

in parallel for higher current applications. Its fast8ns rise time, 5ns fall time of the high-sideMOSFET, and 6ns rise time, 3ns fall time of thelow-side MOSFET when driving a 1000pF loadminimise switching losses. Adaptive shoot-throughprotection is integrated to minimise dead timewhile preventing both the upper and lowerMOSFETs from conducting simultaneously. TheLTC4444 is configured for two supply-independent inputs. The high-side input logicsignal is internally level-shifted to the bootstrapsupply, which may function at up to 114V aboveground. Furthermore, this part drives both upperand lower MOSFET gates over a range of 7.2 to13.5V.

p34-36 Products:Products - 1 page 22/1/09 11:49 Page 34

http://www.ne1.com

http://www.murata-ps.com

http://www.power-one.com

http://www.irf.com

PRODUCT UPDATE 35


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www.ne1.comEnquiry No: 000

2A IGBT/MOSFET GateDrive OptocouplersNEC’s new PS9552 consists of a GaAlAs LED on the input side and a photodiode with processing circuit and power stage on the output side. It is acombination of a fast optocoupler providing galvanic isolation and anIGBT/MOSFET driver supplying high output voltage and current. The designfeatures common mode transient immunity of at least 15kV/µs, outputcurrent of 2A and high switching speed. The plastic DIP package provides8mm creepage distance, 0.4mm isolation distance and 5000Vrms isolationvoltage, and complies with common insafety standards (eg, UL, VDE 0884,CSA, BSI). The optocoupler is suited for industrial inverter and motor controlapplications where a microcontroller unit needs to be isolated from the high-power inverter side. It can drive 1200V/100A IGBTs.

www.eu.necel.com/opto

Boost ConverterManages MultipleHigh-BrightnessLEDsTexas Instruments offers a new high-brightness LED driver with anintegrated 40V, 1.2A switch in 2mm x 2mm QFN package that candrive up to three 1W LEDs in series.The TPS61165 features an input voltage range of 3 to 18V to

efficiently manage multiple high-power LEDs used in single-cell,battery-powered applications or point-of-load designs with a 9V or12V bus. LED brightness can be controlled by a digital single-wireinterface or PWM signal. The digital interface can program an internalregister to set the LED current to one of the 32 logarithmic steps.The converter also comes with built-in protection features, such

as open LED protection, soft-start, over-current limit and over-temperature protection. In addition to driving illumination LEDs, theTPS61165 can drive backlight LEDs for media form factor displaysup to 9in diameter, such as those used in ultra-mobile PCs and LCDphoto frames, industrial laser diodes or medical and industriallighting.

www.ti.com/tps61165-pr


http://www.ne1.com

http://www.ti.com/tps61165-pr

http://www.eu.necel.com/opto

36 PRODUCT UPDATE


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www.ne1.com

Prod head 2 SwitchingMOSFETS forSynchronousDC/DCConverters

CurrentTransducersOfferingCurrent Output

Automotive-Grade LED Driver ICThe new A6260 IC fromAllegro MicroSystems Europeis a high-brightnessconstant-current LED driverwhich is designed to operateover the typical automotivevoltage and temperatureranges. The input voltage isspecified down to 6V, and thedevice will operate at up to40V. The linear constant-current output can beadjusted to deliver up to350mA in a typicalapplication. Severalautomotive-grade protectionfeatures are included. The IC is protected against short circuits to ground or battery, and athermal shutdown circuit disables the IC if the junction temperature reaches 165°C. Inaddition, integrated reverse battery protection eliminates the need for an external reversebattery diode. Typical applications for the A6260 include automotive interior lighting such asmap lights and dome lights and exterior lighting such as rear indicator and brake lights andrear combination lighting. Industrial and consumer high-intensity LED lighting applicationswill also benefit from the device's feature set.

www.allegromicro.com

DOSA Point-of-LoadConverter

Lambda has added toits range of POLconverters with thelaunch of the iAD seriesof non-isolated, singleinline package, through-hole mounting devices.Featuring a DOSA

compatible pin-out, theiAD series addresses abroad range ofapplications fromtelecoms through toindustrial equipment.

With its wide input range from 6 to 14V, the device is well suited for powering a diverserange of loads in a variety of architectures including distributed power, for exampleregulated 9 or 12V bus rails, and non-regulated 4:1 and 5:1 bus converter systems.Furthermore, its broad output adjustment range from 0.8 to 5.5V, its maximum output power

of 80W and its ability to start into a pre-biased load make it especially useful in ASIC/FPGAand other applications where multiple voltages can be present. Special attention has beenpaid to the electrical design to gain a high power conversion efficiency of up to 94%. The iADstandard features include fixed frequency operation, remote sense, remote on/off, flexibleoutput voltage sequencing, auto-recovery of input under-voltage and output over-currentprotection circuitry. Negative polarity on/off, no output voltage sequencing, an industrystandard narrow 9.6 to 14V input voltage range, and short 3.3mm pins are offered as options.

www.lambda-europe.com

Toshiba Electronics Europe has added two newdevices to its UMOS V-H 30V MOSFET serieswhich provide higher drain current (45A max.) andlower on-state resistance (3.1mΩmin.). Comparedto previous process technology, the UMOS V-HSeries improves many of the key parametersrequired for better power efficiency of low-sideMOSFETs in a synchronous DC/DC converter,including lower on-state resistance and reducedself-turn-on loss, achieved through lower gate-to-drain capacitance, lower gate resistance, andoptimised gate threshold voltage. On the high-sideMOSFET, UMOS V-H technology enables fastswitching through low gate switch charge and gateresistance.

The SOP Advance package with a footprint of5.0mm x 6.0mm features a 41% lower profile thana standard SOP-8 package, and enablesapproximately 47% higher power dissipation.

www.toshiba-components.com

LEM's LTSP model operate from a single 5V powersupply and measures positive and negative AC, DCand pulse currents of 8, 12 and 25Arms onprinted circuit boards and provides a current outputinstead of voltage output. This allows the LTSP todetect currents up to at least 14 times the nominalcurrent.

The LTSP uses the same ASIC as LEM’s LTS andLTSR models, allowing Hall-effect closed-loopcurrent measurement in an extremely smallpackage (22mm x 10mm x 24mm). The LTSPprovides better offset drifts than units based ontraditional discrete technology, as well as access tothe internal reference (2.5 V) on a separateexternal pin, for use with microcontrollers and/orA/D converters.

www.lem.com


http://www.ne1.com

http://www.toshiba-components.com

http://www.allegromicro.com

http://www.lambda-europe.com

http://www.lem.com

WEBSITE LOCATOR 37


AC/DC Connverters

www.irf.comInternational Rectifier Co. (GB) LtdTel: +44 (0)1737 227200

DiodesDiscrete Semiconductors

Drivers ICS

www.microsemi.comMicrosemiTel: 001 541 382 8028

Fuses

GTO/Triacs

IGBTs

DC/DC Connverters

DC/DC Connverters


www.power.ti.comTexas InstrumentsTel: +44 (0)1604 663399


www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200


Harmonic Filters

www.murata-europe.comMurata Electronics (UK) LtdTel: +44 (0)1252 811666

EMC/EMI

www.icecomponents.comIce Components IncTel: 001 703 257 7740

Direct Bonded Copper(DPC Substrates)

www.curamik.co.ukcuramik electronics GmbHTel: +49 9645 9222 0


www.mark5.comMark 5 LtdTel: +44 (0)2392 618616









www.protocol-power.comProtocol Power ProductsTel: +44 (0)1582 477737

Busbars

www.auxel.comAuxel FTGTel: +44 (0)7714 699967

Capacitors

www.powersemiconductors.co.ukPower Semiconductors LtdTel: +44 (0)1727 811110

www.powersemiconductors.co.ukPower Semiconductors LtdTel: +44 (0)1727 811110

Connectors & TerminalBlocks


Current Sensors

www.collmer.comCollmer Components IncTel: 001 972 248 2888

www.hvca.comHV Component AssociatesTel: +49 (0) 89/891 374 80


p37-38 Website Locator :p41-42 Website Locator 22/1/09 11:35 Page 37

http://www.irf.com

http://www.collmer.com

http://www.irf.com

http://www.power.ti.com

http://www.protocol-power.com

http://www.mark5.com

http://www.microsemi.com

http://www.neutronltd.co.uk

http://www.curamik.co.uk

http://www.irf.com



http://www.icecomponents.com

http://www.powersemiconductors.co.uk


http://www.murata-europe.com

http://www.irf.com


http://www.irf.com




http://www.hvca.com

http://www.irf.com

http://www.auxel.com

http://www.hvca.com

http://www.powersemiconductors.co.uk


Power Modules

Power Protection Products

Power Substrates

Resistors & Potentiometers

Simulation Software

Thyristors

Smartpower Devices

Transformers/Inducers

Voltage References

Power ICs

Suppressors

Switches & Relays

Switched Mode PowerSupplies

Thermal Management &Heatsinks








www.icecomponents.comIce Components IncTel: 001 703 257 7740










www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399


www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399


www.dau-at.comDau GmbH & Co KGTel: +43 3143 23510

www.denka.co.jpDenka Chemicals GmbHTel: +49 (0)211 13099 50

www.lairdtech.comLaird Technologies LtdTel: 00 44 1342 315044

www.universal-science.comUniversal Science LtdTel: +44 (0)1908 222211



www.isabellenhuette.deIsabellenhütte Heusler GmbH KGTel: +49/(27 71) 9 34 2 82

38 WEBSITE LOCATOR


ADVERTISERS INDEX

ADVERTISER PAGE

CKE 19

CT CONCEPTS 8

CWIEME 35

DANFOSS 12

DRIVES AND CONTROLS IBC

DFA MEDIA LTD 29

ELECTREX 23

FUJI ELECTRIC OBC

INDIUM CORPORATION 9 & 11

INTERNATIONAL RECTIFIER IFC

IXYS 12 & 19

MICROSEMI POWER 19

MITSUBISHI 4

NATIONAL SEMICONDUCTOR 7

PCIM 2008 20

RAZTEC 25

RENCO CORPORATION 15

Linear Converters

Mosfets

Optoelectronic Devices



Packaging & Packaging Materials






p37-38 Website Locator :p41-42 Website Locator 22/1/09 11:35 Page 38

http://www.irf.com


http://www.irf.com






http://www.isabellenhuette.de


http://www.icecomponents.com

http://www.irf.com

http://www.irf.com

http://www.irf.com

http://www.irf.com

http://www.hvca.com

http://www.irf.com




http://www.irf.com









http://www.dau-at.com

http://www.denka.co.jp

http://www.lairdtech.com

http://www.universal-science.com



Exhibition & ConferenceApril 22-24 2008 – NEC, Birmingham

www.drives08.comOpening hours:

Tuesday and Wednesday: 09.30-16.30Thursday: 09.30-15.30

www.drives08.comONE PLACE – ONE WEEKTHE WHOLE OF MANUFACTURING WILL BE THERECo-located events:

Primary partners

In association with

AVOID THE QUEUES BY REGISTERING IN ADVANCE AT

DFA Media Ltd . Cape House . 60a Priory Road . Tonbridge TN9 2BL . tel: 01732 370340 . fax: 01732 360034 . [email protected]

FREETECHNICAL SEMINARS:

- ENERGY MANAGEMENT

- MACHINE SAFETY

- PROFIBUS/NET

- SAFETYBUS/NET

Drives wp.qxd:Layout 1 7/2/08 12:48 Page 1

http://www.drives08.com

http://www.drives08.com


40_PEE_0208:40_PEE_0308 22/1/09 11:29 Page 1

Documents

New Intelligent Power Module Series