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Navitas is the pioneer of GaN System-on- Chip solutions. Its GaNFast™ technology is in volume production, initially for markets such as fast chargers and travel adaptors, which are markets driving GaN transistor adoption. The NV6115 and NV6252 are 650V GaN-on-silicon High Electron Mobility Transistors (HEMTs) packaged in quad flat no-leads (QFN) packages. They are currently used in Aukey, RaVPower and Mu One chargers. The GaNFast technology allows switching frequencies up to 10MHz, reducing energy losses. Moreover, the high frequency enables the use of smaller, lighter passive components. Navitas has integrated the driver part into the GaN component to obtain a monolithic solution. The NV6115 is a one die component and the NV6252 is two dies assembled in an asymmetrical Half- Bridge to enable Active Clamp Flyback operation. System Plus Consulting has analyzed the technical design and cost of the NV6115 and NV6252 components in detail. Supported by a full teardown of the components, this report reveals the innovative assets that enable Navitas to integrate them in fast chargers. This report provides insights into the HEMT structure, the epitaxy, technical choices, design, processes, and supply chain positions. It also estimates the manufacturing cost of all the HEMTs and the packages and analyses the products’ selling prices. Finally, the report provides a functional comparison of the two components and compares them with similar devices from Transphorm and GaN Systems. COMPLETE TEARDOWN WITH Detailed optical and SEM photos Precise measurements Materials EDX analysis Manufacturing process flow Supply chain evaluation Manufacturing cost analysis Estimated sales price Comparison of 650V GaN HEMTs from Navitas, Transphorm and GaN Systems The first GaN monolithic devices from Navitas for fast charging. REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORT Title: Navitas 650V GaNFast Power IC Family Pages: 112 Date: May 2019 Format: PDF & Excel file Price: EUR 3,990 Navitas 650V GaNFast Power IC Family IC – LED – RF – MEMS – IMAGING – PACKAGING – SYSTEM POWER - DISPLAY

Navitas 650V GaNFast Power IC Family - System Plus …...650V GaN-on-silicon High Electron Mobility Transistors (HEMTs) packaged in quad flat no-leads (QFN) packages. They are currently

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Navitas is the pioneer of GaN System-on-

Chip solutions. Its GaNFast™ technology is

in volume production, initially for markets

such as fast chargers and travel adaptors,

which are markets driving GaN transistor

adoption. The NV6115 and NV6252 are

650V GaN-on-silicon High Electron

Mobility Transistors (HEMTs) packaged in

quad flat no-leads (QFN) packages. They

are currently used in Aukey, RaVPower

and Mu One chargers. The GaNFast

technology allows switching frequencies

up to 10MHz, reducing energy losses.

Moreover, the high frequency enables the

use of smaller, lighter passive

components.

Navitas has integrated the driver part into

the GaN component to obtain a

monolithic solution. The NV6115 is a one

die component and the NV6252 is two

dies assembled in an asymmetrical Half-

Bridge to enable Active Clamp Flyback

operation.

System Plus Consulting has analyzed the

technical design and cost of the NV6115

and NV6252 components in detail.

Supported by a full teardown of the

components, this report reveals the

innovative assets that enable Navitas to

integrate them in fast chargers .

This report provides insights into the

HEMT structure, the epitaxy, technical

choices, design, processes, and supply

chain positions. It also estimates the

manufacturing cost of all the HEMTs and

the packages and analyses the products’

selling prices.

Finally, the report provides a functional

comparison of the two components and

compares them with similar devices from

Transphorm and GaN Systems.

COMPLETE TEARDOWN WITH

• Detailed optical and SEM photos

• Precise measurements

• Materials EDX analysis

• Manufacturing process flow

• Supply chain evaluation

• Manufacturing cost analysis

• Estimated sales price

• Comparison of 650V GaN HEMTs from Navitas, Transphorm and GaNSystems

The first GaN monolithic devices from Navitas for fast charging.

REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORT

Title: Navitas 650V GaNFast Power IC Family

Pages: 112

Date: May 2019

Format: PDF & Excel file

Price: EUR 3,990

Navitas 650V GaNFast Power IC Family

IC – LED – RF – MEMS – IMAGING – PACKAGING – SYSTEM – POWER - DISPLAY

TABLE OF CONTENTS

Overview/Introduction

• Executive Summary

• Reverse Costing Methodology

Company Profile

• Navitas

• Products

Physical Analysis

• Package Analysis

o NV6115

Package opening

Package cross-section

o NV6252

• Die Delayering

o NV6115

Die view and dimensions

Die process

o NV6252

Die 1

Die 2

• Die Cross-Sections

o Power HEMT area

o Driver HEMT area

• Die Process Characteristic

AUTHORS

Manufacturing Process

• HEMT Die Front-End Process

• HEMT Die Fabrication Unit

• Final Test and Packaging Fabrication unit

Cost Analysis

• Summary of the Cost Analysis

• Yield Explanations and Hypotheses

• HEMT Wafer Cost

• NV6115 Component

o Die cost, packaging cost, final test cost

o Component cost

• NV6252 Component

o Larger die cost, small die cost

o Packaging cost, final test cost

o Component cost

Price Analysis

• NV6115 Component Price

• NV6252 Component Price

Comparison

• Comparison between Navitas, Transphormand GaN Systems

NAVITAS 650V GANFAST POWER IC FAMILY

RELATED REPORTS

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GaNSystems GS61004B GaNHEMTDiscover how GaN Systems has designed its high-current, low-voltage PCB embedded GaN-on-Si transistor.June 2018 - EUR 3,490*

Véronique Le Troadec has joinedSystem Plus Consulting as a laboratoryengineer.She holds a Master degree in Micro-electronics from the University ofNantes.

Sylvain Hallereau is in charge ofcosting analyses for IC, power andMEMS. He has more than 10 years ofexperience in power device manu-facturing cost analysis and hasstudied a wide range of technologies.

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WHAT IS A REVERSE COSTING®?

Reverse Costing® is the process of disassembling a device (or asystem) in order to identify its technology and calculate itsmanufacturing cost, using in-house models and tools.

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