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Nanotechnology to produce Light Emitting Diodes (LED) and Solar
Cells
Nanotechnology to produce Light Emitting Diodes (LED) and Solar
Cells
Prof. Dr. M. Heuken, AIXTRON AG,
Fon: +49 (241) 8909-154, Fax: +49 (241) 8909-149, Email: [email protected]
RWTH Aachen, University of Technology , Templergraben 55,D-52074 Aachen, Germany
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ContentContent
�Motivation and Company Profile
�Some Nanotechnology � Light Emitting Diodes (LED),� High Efficient Solar Cells� OLED and Displays
�Conclusion
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High Brightness LED Market ForecastHigh Brightness LED Market Forecast
0
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
2008 2009 2010 2011 2012
Mar
ket S
ize
(US
D m
illio
n)
Signs / Displays Mobile Appliances
Signals Automotive
Illumination Electronic equip. / Other
17%
42%
1%
15%
9%
16%
33%
24%1%
13%
16%
13%
HB LED summary forecast by application 2008
2012
Source: Strategies Unlimited 2009; AIXTRON Estimates 2 009
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Compound Semiconductor, July,2003, (Nichia)
White LED with Phosphor ConverterWhite LED with Phosphor Converter
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(Processed, not diced)
MQW Based Blue and Green LEDMQW Based Blue and Green LED
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Illustration of the structure and key growth conditions for thegrowth of the demonstration LED structureIllustration of the structure and key growth conditions for thegrowth of the demonstration LED structure
� Temperatures were 530ºC, 1040ºC and 925ºC for the GaN nucleation layer, high temperature GaN layers and p-GaN respectively.
� The MQWs were grown using QW temperatures of ~740ºC for blue (470nm) and ~690ºC for green (535nm). In both cases the barriers were grown 120ºC above the QW temperature.
� The process was transferred from 2” to 3” by only adjusting temperatures to compensate for the increased wafer thickness and different thermal contact due to the increased wafer bow. No structural changes were introduced to achieve the uniformity presented.
Growth pressure
Sapphire ~560µm
(0.3deg off-cut from 0001)
4µm Undoped GaN
2µm GaN:Si(5x1018)
3x InGaN QWs (2.5nm) + GaN:Si(5x1017) QBs (12nm)
~25nm GaN Nucleation layer900mbar
400mbar
200mBar 140nm GaN:Mg 2x InGaN QWs (2.5nm)+ undoped GaN QBs (12nm)
10nm GaN:Mgheavily doped
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Gas Phase DepositionGas Phase Deposition
Material Engineering on an Atomic Scale
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Crius in the IC systemCrius in the IC system
� The Integrated Concept (IC) design offers a common platform for AIXTRON CRIUS® Close-Coupled-Showerhead and Planetary Reactor®systems. It is optimized for low CoOand features digital control and component standardization.
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Mean on-wafer σσσσ = 2.9nmWafer-to-wafer σσσσ = 1.4nm
No edge exclusion
12x3” CP Wavelength Uniformity Green LED12x3” CP Wavelength Uniformity Green LED
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13%
6%
64%
17%
Based on VLSI RESEARCH Inc. 2008
14%4%
20%
62%
Global MOCVD Market SharesGlobal MOCVD Market Shares
Veeco
Others
Nippon Sanso
AIXTRON
2007Total: $289m
2005Total: $156m
2006Total: $202m
10%2%
70%
18%
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Looking Forward: Future Energy SupplyLooking Forward: Future Energy SupplyPossible Scenario for Europe in 2050
solar power plants
Key-Technology: Highly efficient III-V concentrator cells…Key-Technology: Highly efficient III-V concentrator cells…
solar cells on every roof
Prim
ary
ener
gy u
se E
J/a
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Pow
er d
ensi
ty [W
/m²µ
m]
Multiple cell arrangement allowsbetter usage of full solar spectrum
Why III-V Concentrator Cells?Why III-V Concentrator Cells?
Theoretical limits of • Tandem cells 45.3%• Triple cells 51.2%• Quadruple cells 54.9%
nmnmBest values for •mono-Si: 24,7%•multi-Si: 20,3%•a-Si/µm-Si: 11,7%•CIGS: 18,4%•CdTe: 16,5%
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Why III-V Concentrator Cells?Why III-V Concentrator Cells?
Source:Takashi TomitaCorporate Executive DirectorSHARP CORPORATION
III-V Concentrator Cell Systems ideal for areas wit h high direct sun irradiation:
� Mediterranean Area � North Africa � South Australia � California
� Gulf Region
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- thin- light- flexible- bendable- full color- power efficient- high resolution- wide viewing angle
OLEDs create new display possibilitiesOLEDs create new display possibilities
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OLED end device technologies
� Samsung 31 inch� Samsung 31 inch
Sony 11 inch TV
Sony 11 inch TV
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Glass
ITO (transparent anode)
Hole transportation layer
Emitting layer
Electron transportation layerLiF
Aluminium (cathode)
Light
h+
e-
Amorphous solid – organic glass• frozen liquid / irregular packing• localized states (on one molecule)• weak interaction between molecules
N
NN
Ir
NN
N
NN
CH3
CH3
CH3
TPD
TAZ
Motivation and BasicsWhat is an OLED?Motivation and BasicsWhat is an OLED?
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400 x 400 mm²
Gen2
150 x 150 mm²
Gen1
Scaling to larger Mother GlassScaling to larger Mother Glass
* AIXTRON proprietary
100 x 100 mm²
R&D
Gen3.5650 x 730 mm²
Gen4920 x 730 mm²
Close Couple Showerhead (CCS) Technology*
Two dimensional scaling of process chamber
Process compatibility between Generations
No increase in source Temperature
Gen51300 x 1100 mm²
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ConclusionsConclusions
� Nanotechnology is part of many opto-electronicsystems
� AIXTRON builds systems for electronic and optoelectronic devices using Nanotechnology
� Nanotechnology in LED and solar represent a „green“ technology
� Future economic success based on R&D effort and new ideas
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6 inch LED wafer6 inch LED wafer
Thank You forYour Attention!Thank You for
Your Attention!
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