Drive with the IXYS XPT-IGBTIXYS USED ITS EXPERTISE TO DESIGN THE OPTIMAL IGBT FOR MOTOR DRIVES APPLICATIONS

May 2009

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Overview:

IXYS introduces the XPT IGBT, IXYS’ latest generation of short-circuit rated high voltage IGBTs with fast switching and low conduction losses. This IGBT family was developed in IXYS’ internal fabs using advanced processing and design technologies. These XPT IGBTs are designed for parallel operation, thereby enabling high power module design and scaling up the power capability with the use of multi-discrete devices. These devices are optimized for use in a variety of power control applications including motor drive, UPS, power supplies, inverters and solar power inverters. The benefits of merging the IXYS cell design with XPT (Xtreme light Punch Through) wafer technology result in competitive static and dynamic behavior as well as the rugged and reliable operation during power turn-off testing. The XPT IGBT has a low Vce(sat) (typical 1.8V at 25 degrees C). Combining the XPT IGBT with the recently introduced IXYS SONIC diode delivers fast and soft switching behavior and gives excellent EMI performance regardless of the level of the switched current.

The introduced 1200V XPT IGBTs are rated at 10A, 15A, 25A, 35A, 50A and 75A. These IGBTs will be available in standard module and discrete packages as well as being available to be packaged in customer specific designs. The XPT IGBT/Sonic combination range is available in Converter Brake Inverter module (CBI) and six-pack topologies in 3 different package sizes. A diode bridge input rectifier with break chopper supplements the 3-phase inverter six-pack stage in the CBI configura-tion. The IXA37IF1200HJ is an example of a discrete co-pack containing the XPT IGBT and the Sonic diode integrated in the ISOPLUS247™ package.

With the introduction of the XPT IGBT, IXYS expands its IGBT product range to meet market demands for highly rugged, low loss devices that can be easily paralleled. This new IGBT technology, when combined with our integrated packaging technology, provides superior performance in a high percentage of power switching applications where efficiency and reliability are essential.

• Easy paralleling due to the positives temperature coefficient of the on-state voltage• Rugged XPT design (Xtreme light Punch Through) results in: – Short Circuit rated for 10 µsec. – Very low gate charge – Low EMI – Square RBSOA @ 3 x Ic• Thin wafer technology combined with the XPT design results in a competitive low Vce(sat)

• AC motor drives• Solar inverter• Medical equipment• Uninterruptible power supply• Air-conditioning systems• Welding equipment

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SUMMARY TABLE – XPT-IGBT

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X P T - I G B T – N E W P R O D U C T B R I E F

Part Number Voltage Current Configuration Package V A (80°C ) A (90°C)

IXA20I1200PB 1200 20 TO 220

IXA55I1200HJ 1200 55 ISOPLUS 247™

IXA12IF1200PB 1200 12 TO 220

IXA12IF1200PC 1200 12 TO 263

IXA12IF1200HB 1200 12

IXA20IF1200HB 1200 20 TO 247

IXA33IF1200HB 1200 33

IXA45IF1200HB 1200 45

IXA12IF1200TC 1200 12 TO 268

IXA17IF1200HJ 1200 17

IXA27IF1200HJ 1200 27 ISOPLUS 247™

IXA37IF1200HJ 1200 37

IXA60IF1200NA 1200 60 SOT 227

MIXA10W1200TMH 1200 10

MIXA20W1200TMH 1200 20 MiniPack2

MIXA40W1200TMH 1200 40

MIXA10W1200TML 1200 10

MIXA20W1200TML 1200 20 E1-Pack

MIXA40W1200TML 1200 40

MIXA40W1200TED 1200 40 E2-Pack

MIXA60W1200TED 1200 60

MIXA80W1200TED 1200 80

MIXA10WB1200TMH 1200 10 MiniPack2

MIXA20WB1200TMH 1200 20

MIXA20WB1200TML 1200 20 E1-Pack

MIXA10WB1200TED 1200 10

MIXA20WB1200TED 1200 20 E2-Pack

MIXA30WB1200TED 1200 30

MIXA40WB1200TED 1200 40

MIXA60WB1200TEH 1200 60 E3-Pack

MIXA80WB1200TEH 1200 80

Positive temperature coefficient Short circuit rated

New Generation of Silicon Schottky rectifiers VERY LOW VF RECTIFIERS RANGING FROM 8 TO 200 VOLTS FOR OR’ING AND SMPS APPLICATIONS

May 2009

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Overview:IXYS Corporation – a leader in power semiconductors for Power Conversion and Motion Control applications - offers a new generation of Schottky rectifiers. A wide range of breakdown voltage - from 8V to 200V -, application-optimized designs and an improved thermal behavior are the advantages of these new Schottky Barrier Diodes.

The Schottky-technology has been developed to achieve a rectifier perfectly suited for the different needs of many applications. Application-optimized designs allow the engineers to use the most suitable diode for their circuits. Now the product range of IXYS expands with a second generation of Schottky diodes improved in avalanche ruggedness and thermal behavior. This allows higher integrated and compact designs, space-saving constructions and a higher system efficiency.

The Schottky range offers 11 voltages classes from 8 up to 200V. Three design variants give engineers the choice to optimize every low voltage application from O-Ring to Switch Mode Power Supplies (SMPS). Design 'D' - suited for breakdown voltages (Vrrm) below 15V - offers an extremely low forward voltage drop (VF) which is the best in its class. Beginning with a Vrrm of 15V the 'B'-Types dominate the applications. A very low VF combined with an improved reverse current allows small conduction losses. Between a Vrrm of 45 and 80V the customer can select between a 'B'- and an 'A'-Type. The 'A'-version shows extremely low leakage currents and is optimal for high temperature applications e.g. in automotive designs. With the increase of system voltages the 'A'-types with their high performance are the one and only solution to realize high stability and reliability.

The Schottky products are available in several standard packages – surface mount and leaded – also including our industry recognized ISOPLUS™ packages.We are continuing to expand our product offering to higher voltages and currents and improved performance. With over 20 years experience, you can count on IXYS to meet your demands for best-in-class performance, quality and reliability.

• Ratings from 8 up to 200 Volt• Very low forward voltage• TVJM of 150 to 175°C• Surface Mount Packages

• Telecom Switched Mode rectifiers• Server Power Supplies• 48V High Power DC-DC Converters• Off-line AC to DC switching Power Supplies• PC Power supplies• UPS systems• OR’ing Applications• Automotive

ApplicationsFeatures

Part name VRRM IFAV @ TVJ VF (125°c) Circuit Package

V A °C V DSB20I15PA 15 20 130 0,39 Single Diode TO-220ACDSB40C15PB 15 2x 20 130 0,39 Common Cathode TO-220ABDSB30C30PB 30 2x 15 130 0,44 Common Cathode TO-220ABDSB60C30HB 30 2x 30 125 0,47 Common Cathode TO-247ADDSB60C30PB 30 2x 30 130 0,49 Common Cathode TO-220ABDSB10I45PM 45 10 115 0,52 Single Diode TO-220ACFPDSA20C45PB 45 2x 10 155 0,61 Common Cathode TO-220ABDSB15IM45IB 45 15 125 0,55 Single Diode TO-262DSA15IM45IB 45 15 155 0,63 Single Diode TO-262DSA15I45PA 45 15 155 0,63 Single Diode TO-220ACDSB30C45HB 45 2x 15 125 0,54 Common Cathode TO-247ADDSB30C45PB 45 2x 15 125 0,55 Common Cathode TO-220ABDSA30C45HB 45 2x 15 155 0,62 Common Cathode TO-247ADDSA30C45PB 45 2x 15 155 0,63 Common Cathode TO-220ABDSA60C45HB 45 2x 15 150 0,66 Common Cathode TO-247ADDSB60C45HB 45 2x 30 125 0,58 Common Cathode TO-247ADDSB60C45PB 45 2x 30 125 0,60 Common Cathode TO-220ABDSA60C45PB 45 2x 30 150 0,67 Common Cathode TO-220ABDSB80C45HB 45 2x 40 120 0,59 Common Cathode TO-247ADDSA80C45HB 45 2x 40 150 0,69 Common Cathode TO-247ADDSA20C60PN 60 2x 10 140 0,70 Common Cathode TO-220ABFPDSB20C60PN 60 2x 10 115 0,62 Common Cathode TO-220ABFPDSB30C60PB 60 2x 15 125 0,64 Common Cathode TO-220ABDSA30C60PB 60 2x 15 150 0,72 Common Cathode TO-220ABDSB60C60HB 60 2x 30 125 0,67 Common Cathode TO-247ADDSB60C60PB 60 2x 30 125 0,69 Common Cathode TO-220ABDSA60C60HB 60 2x 30 150 0,75 Common Cathode TO-247ADDSA60C60PB 60 2x 30 150 0,77 Common Cathode TO-220ABDSA10I100PM 100 10 135 0,71 Single Diode TO-220ACFPDSA20C100PN 100 2x 10 135 0,71 Common Cathode TO-220ABFPDSA20C100PB 100 2x 10 155 0,71 Common Cathode TO-220ABDSA30C100QB 100 2x 15 150 0,72 Common Cathode TO-3PDSA30C100HB 100 2x 15 150 0,72 Common Cathode TO-247ADDSA30C100PN 100 2x 15 120 0,73 Common Cathode TO-220ABFPDSA30C100PB 100 2x 15 150 0,73 Common Cathode TO-220ABDSA30I100PA 100 30 150 0,78 Single Diode TO-220ACDSA50C100QB 100 2x 25 155 0,72 Common Cathode TO-3PDSA50C100HB 100 2x 25 155 0,72 Common Cathode TO-247ADDSA60C100PB 100 2x 30 150 0,78 Common Cathode TO-220ABDSA70C100HB 100 2x 35 140 0,80 Common Cathode TO-247ADDSA80C100PB 100 2x 40 150 0,80 Common Cathode TO-220ABDSA10C150PB 150 2x 10 140 0,73 Common Cathode TO-220ABDSA20C150PN 150 2x 10 135 0,73 Common Cathode TO-220ABFPDSA20C150PB 150 2x 10 155 0,73 Common Cathode TO-220ABDSA30C150HB 150 2x 15 150 0,74 Common Cathode TO-247ADDSA30C150PB 150 2x 15 150 0,75 Common Cathode TO-220ABDSA30I150PA 150 30 150 0,80 Single Diode TO-220ACDSA50C150HB 150 2x 25 155 0,74 Common Cathode TO-247ADDSA60C150PB 150 2x 30 150 0,80 Common Cathode TO-220ABDSA70C150HB 150 2x 35 150 0,77 Common Cathode TO-247ADDSA120C150QB 150 2x 60 150 0,80 Common Cathode TO-3PDSA30C200PB 200 2x 15 150 0,78 Common Cathode TO-220ABDSA70C200HB 200 2x 35 150 0,86 Common Cathode TO-247ADDSA90C200HB 200 2x 45 145 0,86 Common Cathode TO-247AD

SUMMARY TABLE - Schottky Generation 2

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Part name VRRM IFAV @ TVJ VF (125°c) Circuit Package

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New CoolMOS™

portfolio expanded in ISOPLUS™ packages

May 2009

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Overview: CoolMOS™ – Coolest & fastestThe revolutionary CoolMOS™ power MOSFET family enables a significant reduction of conducting and switching losses in Switched Mode Power Supplies (SMPS). Latest generation of high voltage power MOSFETs will make AC/DC power supplies even more efficient, more compact, lighter and cooler. This target is achieved by offering the lowest on-state resistance per package outline, the fastest switching speed and the lowest gate drive requirements of high voltage MOSFETs commercially available.

IXYS ISOPLUS™ packaging – Highest reliability & flexibilityThe new CoolMOS™ is available in standard packages like TO220 or TO247 and Full Plastic TO220. Now IXYS offers also DCB isolated packages like ISOPLUS220™. ISOPLUS™ versions have the same footprint as the unisolated standard packages but offer highest reliability and excellent thermal performance. In ISOPLUS™ packages the dies are soldered on a DCB thereby utilizing the high performance of modules. This construction has a thermal expansion coefficient which is very close to that of the silicon and better matched than the Cu based standard packages. Therefore in ISOPLUS™ packages the die sees reduced mechanical stress under thermal or power cycling resulting in world class reliability.In most applications power devices must be electrically isolated. ISOPLUS™ packages offer isolation without the need of using isolating foils. Therefore ISOPLUS™ gives a very low thermal impedance from die to heat sink.ISOPLUS™ provides the most advantageous platform for multi chip packaging. Configurations such as buck or boost converters or half bridge topologies are easy to implement. Features include excellent switching behaviour due to low inductive current paths as dies are located within one package.FMD 15-06KC5 or FMD 47-06KC5 are examples of where ISOPLUS™ technology can be used to increase power density by integrating PFC Mosfet and PFC diode into one package.

The latest product is MKE15R600DCFC using a SiC Boost Diode.

Another benefit is the small coupling capacity between die and heat sink. This helps to reduce EMI emissions.The combination of a very efficient CoolMOS™ and the outstanding ISOPLUS™ packaging technology gives the designer an extremely powerful and reliable solution.

ApplicationsFeatures Benefits

• Worldwide best RDS(ON) per package outline• Ultra low gate charge• Extreme dV/dt rated• High peak current capability• RoHS compliant

• More compact• Lighter• Highest reliability• Lowest conduction and switching losses• Low gate drive power

• Switched Mode Power Supplies (SMPS)• Adapter• PFC Boost Stage• Half Forward Converter• AC switch

* CoolMOS™ is a trademark of Infineon Technologies AG.

SUMMARY TABLE - CoolMOS™*

C o o l M O S ™ – C O O L E S T & F A S T E S T – N E W P R O D U C T B R I E F

Package Outlines (Package dimensions see data sheet.)

Type VDS ID25 ID90 RDS(ON) max QG(on) Circuit Package Max Tc = 25ºC Tc = 90ºC Tvj = 25ºC typ VDS A A mΩ nC Non isolated IXKP 10N60C5 600 10 7 0,385 17 single switch TO220 IXKP 13N60C5 600 13 9 0,300 22 single switch TO220IXKP 20N60C5 600 20 13 0,200 32 single switch TO220IXKH 20N60C5 600 20 13 0,200 32 single switch TO247 IXKP 24N60C5 600 24 16 0,165 40 single switch TO220 IXKH 24N60C5 600 24 16 0,165 40 single switch TO247 IXKH 30N60C5 600 30 21 0,125 53 single switch TO247IXKH 35N60C5 600 35 25 0,100 60 single switch TO247IXKT 70N60C5 600 66 46 0,045 150 single switch (SMD) TO268 IXKH 70N60C5 600 70 48 0,045 150 single switch TO247 Full plastic IXKP 10N60C5M 600 5,4 3,7 0,385 17 single switch FP TO220IXKP 13N60C5M 600 6,5 4,5 0,300 22 single switch FP TO220IXKP 20N60C5M 600 7,6 5,3 0,200 32 single switch FP TO220IXKP 24N60C5M 600 8,5 6,0 0,165 40 single switch FP TO220DCB isolated IXKC 15N60C5 600 15 11 0,165 40 single switch ISOPLUS220TM

IXKC 19N60C5 600 19 15 0,125 53 single switch ISOPLUS220TM

IXKC 23N60C5 600 23 16 0,100 60 single switch ISOPLUS220TM

IXKR 70N60C5 600 47 32 0,045 150 single switch ISOPLUS247TM

LKK 47-06C5 600 2 x 47 2 x 32 2 x 0,045 2 x 150 dual switch ISOPLUS264TM

(push-pull / AC-switch)

FMD 15-06KC5 600 15 11 0,165 40 Boost with 2 x 300V Diode ISOPLUSi4™MKE 15R600DCFC 600 15 11 0,165 40 Boost with SiC Diode ISOPLUSi4™FMD 47-06KC5 600 47 32 0,045 150 Boost with 2 x 300V Diode ISOPLUSi4™FDM 15-06KC5 600 15 11 0,165 40 Buck with 2 x 300V Diode ISOPLUSi4™FDM 47-06KC5 600 47 32 0,045 150 Buck with 2 x 300V Diode ISOPLUSi4™

FP TO220 (Full Plastic) TO220

ISOPLUS220TM ISOPLUSi4TM

* CoolMOS™ is a trademark of Infineon Technologies AG.

TO247

ISOPLUS247TM ISOPLUS264TM

TO268

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