1P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY

FEATURES

GENERAL FEATURES• SinglePowerSupplyOperation -4.5to5.5voltforread,erase,andprogramoperations• 262,144x8/131,072x16switchable• BootSectorArchitecture -T=TopBootSector -B=BottomBootSector• SectorStructure -16K-Bytex1,8K-Bytex2,32K-Bytex1,and64K-Bytex3• Sectorprotection -Hardwaremethodtodisableanycombinationofsectorsfromprogramoreraseoperations -Temporarysectorunprotectedallowscodechangesinpreviouslylockedsectors• Latch-upprotectedto100mAfrom-1VtoVcc+1V• CompatiblewithJEDECstandard -PinoutandsoftwarecompatibletosinglepowersupplyFlash

PERFORMANCE• HighPerformance -Accesstime:70/90ns -Byte/Wordprogramtime:9us/11us(typical) -Erasetime:0.7s/sector,4s/chip(typical)• LowPowerConsumption -Lowactivereadcurrent:40mA(maximum)at5MHz -Lowstandbycurrent:1uA(typical)• Minimum100,000erase/programcycle• 20yearsdataretention

SOFTWARE FEATURES• EraseSuspend/EraseResume -Suspendssectoreraseoperation to readdata fromorprogramdata toanothersectorwhich isnotbeingerased

• StatusReply -Data#Polling&Togglebitsprovidedetectionofprogramanderaseoperationcompletion

HARDWARE FEATURES• Ready/Busy#(RY/BY#)Output -Providesahardwaremethodofdetectingprogramanderaseoperationcompletion• HardwareReset(RESET#)Input -Providesahardwaremethodtoresettheinternalstatemachinetoreadmode

PACKAGE • 44-PinSOP• 48-PinTSOP• All devices are RoHS Compliant

2P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

ContentsFEATURES .................................................................................................................................................................. 1

GENERALFEATURES...............................................................................................................................1SOFTWAREFEATURES............................................................................................................................1HARDWAREFEATURES...........................................................................................................................1PACKAGE..................................................................................................................................................1

PIN CONFIGURATIONS .............................................................................................................................................. 544SOP(500mil)...........................................................................................................................................548TSOP(TYPEI)(12mmx20mm)............................................................................................................5

PIN DESCRIPTION ...................................................................................................................................................... 6LOGICSYMBOL.........................................................................................................................................6

BLOCK DIAGRAM ....................................................................................................................................................... 7Table 1. SECTOR STRUCTURE ................................................................................................................................. 8

MX29F200CTTopBootSectorAddressesTables......................................................................................8MX29F200CBBottomBootSectorAddressesTables................................................................................8Table2.BUSOPERATION.........................................................................................................................9REQUIREMENTSFORREADINGARRAYDATA....................................................................................10WRITECOMMANDS/COMMANDSEQUENCES.....................................................................................10RESET#OPERATION..............................................................................................................................10SECTORPROTECTOPERATION...........................................................................................................11CHIPUNPROTECTOPERATION...........................................................................................................11TEMPORARYSECTORUNPROTECTOPERATION..............................................................................11AUTOMATICSELECTOPERATION........................................................................................................11VERIFYSECTORPROTECTSTATUSOPERATION...............................................................................12DATAPROTECTION.................................................................................................................................12WRITEPULSE"GLITCH"PROTECTION................................................................................................12LOGICALINHIBIT.....................................................................................................................................12POWER-UPSEQUENCE.........................................................................................................................12POWER-UPWRITEINHIBIT....................................................................................................................12POWERSUPPLYDECOUPLING.............................................................................................................12TABLE3.MX29F200CT/BCOMMANDDEFINITIONS............................................................................13RESET.....................................................................................................................................................14AUTOMATICSELECTCOMMANDSEQUENCE.....................................................................................14AUTOMATICPROGRAMMING................................................................................................................15CHIPERASE...........................................................................................................................................16SECTORERASE......................................................................................................................................16SECTORERASESUSPEND....................................................................................................................17SECTORERASERESUME......................................................................................................................17

ABSOLUTE MAXIMUM STRESS RATINGS ............................................................................................................. 18OPERATING TEMPERATURE AND VOLTAGE ........................................................................................................ 18DC CHARACTERISTICS ........................................................................................................................................ 19SWITCHING TEST CIRCUITS ................................................................................................................................... 20

3P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

SWITCHING TEST WAVEFORMS ........................................................................................................................... 20AC CHARACTERISTICS ......................................................................................................................................... 21

Figure1.COMMANDWRITEOPERATION.............................................................................................22READ/RESET OPERATION ...................................................................................................................................... 23

Figure2.READTIMINGWAVEFORMS...................................................................................................23ACCHARACTERISTICS..........................................................................................................................24Figure3.RESET#TIMINGWAVEFORM.................................................................................................24

ERASE/PROGRAM OPERATION ............................................................................................................................. 25Figure4.AUTOMATICCHIPERASETIMINGWAVEFORM....................................................................25Figure5.AUTOMATICCHIPERASEALGORITHMFLOWCHART..........................................................26Figure6.AUTOMATICSECTORERASETIMINGWAVEFORM..............................................................27Figure7.AUTOMATICSECTORERASEALGORITHMFLOWCHART..................................................28Figure8.ERASESUSPEND/RESUMEFLOWCHART............................................................................29Figure9.AUTOMATICPROGRAMTIMINGWAVEFORMS.....................................................................30Figure10.CE#CONTROLLEDWRITETIMINGWAVEFORM................................................................31Figure11.AUTOMATICPROGRAMMINGALGORITHMFLOWCHART..................................................32

SECTOR PROTECT/CHIP UNPROTECT ................................................................................................................. 33Figure12.SECTORPROTECT/CHIPUNPROTECTWAVEFORM(RESET#Control)...........................33Figure13-1.IN-SYSTEMSECTORPROTECTWITHRESET#=Vhv.......................................................34Figure13-2.CHIPUNPROTECTALGORITHMSWITHRESET#=Vhv....................................................35Table5.TEMPORARYSECTORUNPROTECT.......................................................................................36Figure14.TEMPORARYSECTORUNPROTECTWAVEFORMS...........................................................36Figure15.TEMPORARYSECTORUNPROTECTFLOWCHART...........................................................37Figure16.SILICONIDREADTIMINGWAVEFORM................................................................................38

WRITE OPERATION STATUS ................................................................................................................................... 39Figure17.DATA#POLLINGTIMINGWAVEFORMS(DURINGAUTOMATICALGORITHMS)................39Figure18.DATA#POLLINGALGORITHM...............................................................................................40Figure19.TOGGLEBITTIMINGWAVEFORMS(DURINGAUTOMATICALGORITHMS).....................41Figure20.TOGGLEBITALGORITHM...................................................................................................42

RECOMMENDED OPERATING CONDITIONS ......................................................................................................... 43ERASE AND PROGRAMMING PERFORMANCE .................................................................................................... 44DATA RETENTION .................................................................................................................................................... 44LATCH-UP CHARACTERISTICS .............................................................................................................................. 44TSOP AND SOP PIN CAPACITANCE ....................................................................................................................... 44ORDERING INFORMATION ...................................................................................................................................... 45PART NAME DESCRIPTION ..................................................................................................................................... 46PACKAGE INFORMATION ........................................................................................................................................ 47REVISION HISTORY ................................................................................................................................................. 49

4P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

PIN CONFIGURATIONS

44 SOP(500mil)

48 TSOP(TYPE I) (12mm x 20mm)

2345678910111213141516171819202122

44434241403938373635343332313029282726252423

NCRY/BY#

NCA7A6A5A4A3A2A1A0

CE#GNDOE#

Q0Q8Q1Q9Q2

Q10Q3

Q11

RESET#WE#A8A9A10A11A12A13A14A15A16BYTE#GNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCC

MX2

9F20

0C T

/B

A15A14A13A12A11A10

A9A8NCNC

WE#RESET#

NCNC

RY/BY#NCNCA7A6A5A4A3A2A1

123456789101112131415161718192021222324

A16BYTE#GNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCCQ11Q3Q10Q2Q9Q1Q8Q0OE#GNDCE#A0

484746454443424140393837363534333231302928272625

MX29F200C T/B(NORMAL TYPE)

A15A14A13A12A11A10A9A8NCNCWE#RESET#NCNCRY/BY#NCNCA7A6A5A4A3A2A1

123456789

101112131415161718192021222324

A16BYTE#

GNDQ15/A-1

Q7Q14

Q6Q13

Q5Q12

Q4VCCQ11Q3

Q10Q2Q9Q1Q8Q0

OE#GNDCE#

A0

484746454443424140393837363534333231302928272625

MX29F200C T/B(REVERSE TYPE)

5P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

LOGIC SYMBOL

16 or 8Q0-Q15

(A-1)

RY/BY#

A0-A16

CE#

OE#

WE#

RESET#

BYTE#

17

PIN DESCRIPTIONSYMBOL PIN NAMEA0-A16 AddressInputQ0-Q14 DataInput/OutputQ15/A-1 Q15(Wordmode)/LSBaddr.(Bytemode)CE# ChipEnableInputOE# OutputEnableInput

RESET# HardwareResetPin,ActivelowWE# WriteEnableInput

RY/BY# Read/BusyOutputBYTE# Word/ByteSelectionInputVCC PowerSupplyPin(+5V)GND GroundPinNC PinNotConnectedInternally

6P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

BLOCK DIAGRAM

CONTROLINPUTLOGIC

PROGRAM/ERASE

HIGH VOLTAGE

WRITE

STATE

MACHINE

(WSM)

STATE

REGISTERFLASHARRAY

X-DEC

OD

ER

ADDRESS

LATCH

AND

BUFFER Y-PASS GATE

Y-DEC

OD

ER

ARRAYSOURCE

HVCOMMANDDATA

DECODER

COMMAND

DATA LATCH

I/O BUFFER

PGMDATA

HV

PROGRAMDATA LATCH

SENSEAMPLIFIER

Q0-Q15/A-1

A0-AM

AM: MSB address

CE#OE#WE#

RESET#BYTE#

7P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

MX29F200CT Top Boot Sector Addresses Tables

MX29F200CB Bottom Boot Sector Addresses Tables

Table 1. SECTOR STRUCTURE

A16 A15 A14 A13 A12 Sector Size (Kbytes/Kwords)

Address Range (in hexadecimal)(x8)Address Range (x16) Address Range

SA0 0 0 0 0 X 16/8 00000h-03FFFh 00000h-01FFFhSA1 0 0 0 1 0 8/4 04000h-05FFFh 02000h-02FFFhSA2 0 0 0 1 1 8/4 06000h-07FFFh 03000h-03FFFhSA3 0 0 1 X X 32/16 08000h-0FFFFh 04000h-07FFFhSA4 0 1 X X X 64/32 10000h-1FFFFh 08000h-0FFFFhSA5 1 0 X X X 64/32 20000h-2FFFFh 10000h-17FFFhSA6 1 1 X X X 64/32 30000h-3FFFFh 18000h-1FFFFh

A16 A15 A14 A13 A12 Sector Size (Kbytes/Kwords)

Address Range (in hexadecimal)(x8) Address Range (x16) Address Range

SA0 0 0 X X X 64/32 00000h-0FFFFh 00000h-07FFFhSA1 0 1 X X X 64/32 10000h-1FFFFh 08000h-0FFFFhSA2 1 0 X X X 64/32 20000h-2FFFFh 10000h-17FFFhSA3 1 1 0 X X 32/16 30000h-37FFFh 18000h-1BFFFhSA4 1 1 1 0 0 8/4 38000h-39FFFh 1C000h-1CFFFhSA5 1 1 1 0 1 8/4 3A000h-3BFFFh 1D000h-1DFFFhSA6 1 1 1 1 X 16/8 3C000h-3FFFFh 1E000h-1FFFFh

8P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Table 2. BUS OPERATION

Notes:1.Vhvistheveryhighvoltage,11.5Vto12.5V.2.Xmeansinputhigh(Vih)orinputlow(Vil).3.SAmeanssectoraddress:A12~A16.4.Code=00H/XX00Hmeansunprotected. Code=01H/XX01Hmeansprotected.

PinsMode

CE# OE# WE#RES-ET#

A0 A1 A6 A9 Q0 ~ Q15

ReadSiliconIDManufactureCode

L L H H L L X VhvC2H(Bytemode)00C2H(Wordmode)

ReadSiliconIDDeviceCode

L L H H H L X Vhv51H/57H(Bytemode)2251H/2257H(Wordmode)

Read L L H H A0 A1 A6 A9 DOUT

Standby H X X H X X X X HIGHZOutputDisable L H H H X X X X HIGHZWrite L H L H A0 A1 A6 A9 DIN

SectorProtect L H L Vhv L H L X DIN

ChipUnprotect L H L Vhv L H H X DIN

VerifySectorProtect/Unprotect L L H H L H L Vhv Code(4)Reset X X X L X X X X HIGHZ

9P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

REQUIREMENTS FOR READING ARRAY DATA

Readarrayactionistoreadthedatastoredinthearrayout.Whilethememorydeviceisinpowereduporhasbeenreset,itwillautomaticallyenterthestatusofreadarray.Ifthemicroprocessorwantstoreadthedatastoredinarray,ithastodriveCE#(deviceenablecontrolpin)andOE#(Outputcontrolpin)asVil,andinputtheaddressofthedatatobereadintoaddresspinatthesametime.Afteraperiodofreadcycle(TceorTaa),thedatabeingreadoutwillbedisplayedonoutputpinformicroprocessortoaccess.IfCE#orOE#isVih,theoutputwillbeintri-state,andtherewillbenodatadisplayedonoutputpinatall.

Afterthememorydevicecompletesembeddedoperation(automaticEraseorProgram),itwillautomaticallyre-turntothestatusofreadarray,andthedevicecanreadthedatainanyaddressinthearray.Intheprocessoferasing, if thedevicereceives theErasesuspendcommand,eraseoperationwillbestoppedafteraperiodoftimenomorethanTreadyandthedevicewillreturntothestatusofreadarray.Atthistime,thedevicecanreadthedatastoredinanyaddressexceptthesectorbeingerasedinthearray.Inthestatusoferasesuspend,ifuserwantstoreadthedatainthesectorsbeingerased,thedevicewilloutputstatusdataontotheoutput.Similarly,ifprogramcommandisissuedaftererasesuspend,afterprogramoperationiscompleted,systemcanstillreadar-raydatainanyaddressexceptthesectorstobeerased.Thedeviceneedsto issueresetcommandtoenablereadarrayoperationagaininordertoarbitrarilyreadthedatainthearrayinthefollowingtwosituations:

1.Inprogramoreraseoperation,theprogrammingorerasingfailurecausesQ5togohigh.

2.Thedeviceisinautoselectmode.

In the twosituationsabove, if resetcommand isnot issued, thedevice isnot in readarraymodeandsystemmustissueresetcommandbeforereadingarraydata.

WRITE COMMANDS/COMMAND SEQUENCES

Towriteacommandtothedevice,systemmustdriveWE#andCE#toVil,andOE#toVih.Inacommandcycle,alladdressare latchedat the later fallingedgeofCE#andWE#,andalldataare latchedat theearlier risingedgeofCE#andWE#.

"Figure 1. COMMAND WRITE OPERATION" illustratestheACtimingwaveformofawritecommand,and"TA-BLE 3. MX29F200C T/B COMMAND DEFINITIONS"definesallthevalidcommandsetsofthedevice.Systemisnotallowedtowriteinvalidcommandsnotdefinedinthisdatasheet.Writinganinvalidcommandwillbringthedevicetoanundefinedstate.

RESET# OPERATION

DrivingRESET#pinlowforaperiodmorethanTrpwillresetthedevicebacktoreadmode.Ifthedeviceisinprogramoreraseoperation,theresetoperationwill takeatmostaperiodofTreadyforthedevicetoreturntoreadarraymode.Beforethedevicereturnstoreadarraymode,theRY/BY#pinremainslow(busystatus).

WhenRESET#pinisheldatGND±0.3V,thedeviceconsumesstandbycurrent(Isb).However,devicedrawslarg-ercurrentifRESET#pinisheldatVilbutnotwithinGND±0.3V.

ItisrecommendedthatthesystemtotieitsresetsignaltoRESET#pinofflashmemory,sothattheflashmemo-rywillberesetduringsystemresetandallowssystemtoreadbootcodefromflashmemory.

10P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

SECTOR PROTECT OPERATION

Whenasectorisprotected,programoreraseoperationwillbedisabledonthesesectors.MX29F200CT/Bpro-videsonemethodforsectorprotection.

Oncethesectorisprotected,thesectorremainsprotecteduntilnextchipunprotect,oristemporarilyunprotectedbyassertingRESET#pinatVhv.Refertotemporarysectorunprotectoperationforfurtherdetails.

ThismethodisbyapplyingVhvonRESET#pin.Referto"Figure 12. SECTOR PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control)"fortimingdiagramand"Figure 13-1. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv"and"Figure 13-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv"forthealgorithmforthismethod.

CHIP UNPROTECT OPERATION

MX29F200CT/Bprovidesonemethod for chipunprotect.Thechipunprotectoperationunprotectsall sectorswithinthedevice.Itisrecommendedtoprotectallsectorsbeforeactivatingchipunprotectmode.Allsectorareunprotectedwhenshippedfromthefactory.

ThismethodisbyapplyingVhvonRESET#pin.Referto"Figure 12. SECTOR PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control)"fortimingdiagramand"Figure 13-1. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv"and"Figure 13-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv"foralgorithmoftheoperation.

TEMPORARY SECTOR UNPROTECT OPERATION

SystemcanapplyRESET#pinatVhvtoplacethedeviceintemporaryunprotectmode.Inthismode,previouslyprotectedsectorscanbeprogrammedorerasedjustasitisunprotected.Thedevicesreturnstonormalopera-tiononceVhvisremovedfromRESET#pinandpreviouslyprotectedsectorsareagainprotected.

AUTOMATIC SELECT OPERATION

When thedevice is inReadarraymodeorerase-suspendedreadarraymode,usercan issuereadsilicon IDcommandtoenterreadsiliconIDmode.AfterenteringreadsiliconIDmode,usercanqueryseveralsiliconIDscontinuouslyanddoesnotneed to issuereadsilicon IDmodeagain.WhenA0 isLow,devicewilloutputMa-cronixManufactureIDC2.WhenA0ishigh,devicewilloutputDeviceID.InreadsiliconIDmode,issuingresetcommandwillresetdevicebacktoreadarraymodeorerase-suspendedreadarraymode.

AnotherwaytoenterreadsiliconIDistoapplyhighvoltageonA9pinwithCE#,OE#andA1atVil.WhilethehighvoltageofA9pin isdischarged,devicewillautomatically leavereadsiliconIDmodeandgobacktoreadarraymodeorerase-suspendedreadarraymode.WhenA0isLow,devicewilloutputMacronixManufactureIDC2.WhenA0ishigh,devicewilloutputDeviceID.

11P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

VERIFY SECTOR PROTECT STATUS OPERATION

MX29F200CT/BprovideshardwaresectorprotectionagainstProgramandEraseoperation forprotectedsec-tors.ThesectorprotectstatuscanbereadthroughSectorProtectVerifycommand.ThismethodrequiresVhvonA9pin,VihonWE#andA1pins,VilonCE#,OE#,A6andA0pins,andsectoraddressonA12toA16pins.Ifthereadoutdatais01H,thedesignatedsectorisprotected.Oppositely,ifthereadoutdatais00H,thedesignatedsectorisstillnotbeingprotected.

DATA PROTECTION

Toavoidaccidentalerasureorprogrammingofthedevice,thedeviceisautomaticallyresettoreadarraymodeduringpowerup.Besides,onlyaftersuccessfulcompletionofthespecifiedcommandsetswillthedevicebeginitseraseorprogramoperation.

Otherfeaturestoprotectthedatafromaccidentalalternationaredescribedasfollowed.

WRITE PULSE "GLITCH" PROTECTION

CE#,WE#,OE#pulsesshorter than5nsaretreatedasglitchesandwillnotberegardedasaneffectivewritecycle.

LOGICAL INHIBIT

AvalidwritecyclerequiresbothCE#andWE#atVilwithOE#atVih.WritecycleisignoredwheneitherCE#atVih,WE#aVih,orOE#atVil.

POWER-UP SEQUENCE

Uponpowerup,MX29F200CT/Bisplacedinreadarraymode.Furthermore,programoreraseoperationwillbe-ginonlyaftersuccessfulcompletionofspecifiedcommandsequences.

POWER-UP WRITE INHIBIT

WhenWE#,CE#isheldatVilandOE#isheldatVihduringpowerup,thedeviceignoresthefirstcommandontherisingedgeofWE#.

POWER SUPPLY DECOUPLING

A0.1uFcapacitorshouldbeconnectedbetweentheVccandGNDtoreducethenoiseeffect.

12P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

TABLE 3. MX29F200C T/B COMMAND DEFINITIONS

Notes:1.DeviceID:2251H/51HforTopBootSectordevice. 2257H/57HforBottomBootSectordevice.2.For sector protect verify result,XX00H/00Hmeans sector is not protected,XX01H/01Hmeans sector has

beenprotected.3.SectorProtectcommandisvalidduringVhvatRESET#pin,VihatA1pinandVilatA0,A6pins.ThelastBus

cycisforprotectverify.4. Itisnotallowedtoadoptanyothercodewhichisnotintheabovecommanddefinitiontable.

Command ReadMode ResetModeAutomaticSelect

ManufacturerID DeviceID SectorProtectVerifyWord Byte Word Byte Word Byte

1stBusCycle

Addr Addr XXX 555 AAA 555 AAA 555 AAAData Data F0 AA AA AA AA AA AA

2ndBusCycle

Addr 2AA 555 2AA 555 2AA 555Data 55 55 55 55 55 55

3rdBusCycle

Addr 555 AAA 555 AAA 555 AAAData 90 90 90 90 90 90

4thBusCycle

Addr X00 X00 X01 X02 (Sector)X02 (Sector)X04

Data 00C2 C2 ID ID XX00/XX01 00/01

5thBusCycle

AddrData

6thBusCycle

AddrData

Command Program ChipErase SectorErase EraseSuspend

EraseResume

SectorProtect

Word Byte Word Byte Word Byte Word Byte1stBusCycle

Addr 555 AAA 555 AAA 555 AAA Sector Sector XXX XXXData AA AA AA AA AA AA B0 30 60 60

2ndBusCycle

Addr 2AA 555 2AA 555 2AA 555 sector sectorData 55 55 55 55 55 55 60 60

3rdBusCycle

Addr 555 AAA 555 AAA 555 AAA sector sectorData A0 A0 80 80 80 80 40 40

4thBusCycle

Addr Addr Addr 555 AAA 555 AAA sector sectorData Data Data AA AA AA AA 00/01 00/01

5thBusCycle

Addr 2AA 555 2AA 555Data 55 55 55 55

6thBusCycle

Addr 555 AAA Sector SectorData 10 10 30 30

13P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

RESET

Inthefollowingsituations,executingresetcommandwillresetdevicebacktoreadarraymode:• Amongerasecommandsequence(beforethefullcommandsetiscompleted)• Sectorerasetime-outperiod• Erasefail(whileQ5ishigh)• Amongprogramcommandsequence(beforethefullcommandset iscompleted,erase-suspendedprogramincluded)

• Programfail(whileQ5ishigh,anderase-suspendedprogramfailisincluded)• ReadsiliconIDmode• Sectorprotectverify

Whiledeviceisatthestatusofprogramfailorerasefail(Q5ishigh),usermustissueresetcommandtoresetdevicebacktoreadarraymode.WhilethedeviceisinreadsiliconIDmodeorsectorprotectverifymode,usermustissueresetcommandtoresetdevicebacktoreadarraymode.

Whenthedeviceisintheprogressofprogramming(notprogramfail)orerasing(noterasefail),devicewillig-noreresetcommand.

AUTOMATIC SELECT COMMAND SEQUENCE

AutomaticSelectmodeisusedtoaccessthemanufacturerID,deviceIDandtoverifywhetherornotasectorisprotected.Theautomaticselectmodehasfourcommandcycles.Thefirsttwoareunlockcycles,andfollowedbyaspecificcommand.Thefourthcycleisanormalreadcycle,andusercanreadatanyaddressanynumberoftimeswithoutenteringanothercommandsequence.TheresetcommandisnecessarytoexittheAutomaticSe-lectmodeandbacktoreadarray.Thefollowingtableshowstheidentificationcodewithcorrespondingaddress.

Thereisanalternativemethodtothatshownin"Table 2. BUS OPERATION",whichisintendedforEPROMpro-grammersandrequiresVhvonaddressbitA9.

Address Data (Hex) Representation

ManufacturerIDWord X00 00C2Byte X00 C2

DeviceID Word X01 2251/2257 Top/BottomBootSectorByte X02 51/57 Top/BottomBootSector

SectorProtectVerify Word (Sectoraddress)X02 00/01 Unprotected/protectedByte (Sectoraddress)X04 00/01 Unprotected/protected

14P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

AUTOMATIC PROGRAMMING

TheMX29F200CT/BcanprovidetheuserprogramfunctionbytheformofByte-ModeorWord-Mode.Aslongastheusersentertherightcycledefinedinthe"TABLE 3. MX29F200C T/B COMMAND DEFINITIONS"(including2unlockcyclesandA0H),anydatauserinputswillautomaticallybeprogrammedintothearray.

Once theprogram function is executed, the internalwrite state controllerwill automatically execute thealgo-rithmsand timingsnecessary forprogramandverification,which includesgeneratingsuitableprogrampulse,verifyingwhetherthethresholdvoltageoftheprogrammedcellishighenoughandrepeatingtheprogrampulseifanyofthecellsdoesnotpassverification.Meanwhile,theinternalcontrolwillprohibittheprogrammingtocellsthatpassverificationwhiletheothercellsfailinverificationinordertoavoidover-programming.

Programmingwillonlychangethebitstatusfrom"1"to"0".Thatistosay,itisimpossibletoconvertthebitstatusfrom"0"to"1"byprogramming.Meanwhile,theinternalwriteverificationonlydetectstheerrorsofthe"1"thatisnotsuccessfullyprogrammedto"0".

Anycommandwrittentothedeviceduringprogrammingwillbeignoredexcepthardwarereset,whichwilltermi-natetheprogramoperationafteraperiodoftimenomorethanTready.Whentheembeddedprogramalgorithmiscompleteortheprogramoperationisterminatedbyhardwarereset,thedevicewillreturntothereadingarraydatamode.

Withtheinternalwritestatecontroller,thedevicerequirestheusertowritetheprogramcommandanddataonly.ThetypicalchipprogramtimeatroomtemperatureoftheMX29F200CT/Bis1.5seconds.(Word-Mode)

Whentheembeddedprogramoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:

*1:Thestatus"inprogress"meansbothprogrammodeanderase-suspendedprogrammode.*2:RY/BY#isanopendrainoutputpinandshouldbeweaklyconnectedtoVDDthroughapull-upresistor.*3:Whenanattemptismadetoprogramaprotectedsector,Q7willoutputitscomplementdataorQ6continuestotoggleforabout1usandthedevicereturnstoreadarraystatewithoutprogramingthedataintheprotectedsector.

Status Q7 Q6 Q5 RY/BY#*2Inprogress*1 Q7# Toggling 0 0Finished Q7 Stoptoggling 0 1

Exceedtimelimit Q7# Toggling 1 0

15P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

SECTOR ERASE

SectorEraseistoeraseallthedatainasectorwith"1"and"0"asall"1".Itrequiressixcommandcyclestois-sue.Thefirsttwocyclesare"unlockcycles",thethirdoneisaconfigurationcycle,thefourthandfiftharealso"unlockcycles"andthesixthcycleisthesectorerasecommand.Afterthesectorerasecommandsequenceisissued, there isa time-outperiodof50uscounted internally.During the time-outperiod,additional sectorad-dressandsectorerasecommandcanbewrittenmultiply.Onceuserentersanothersectorerasecommand,thetime-outperiodof50usisrecounted.Ifuserentersanycommandotherthansectoreraseorerasesuspenddur-ingtime-outperiod,theerasecommandwouldbeabortedandthedeviceisresettoreadarraycondition.Thenumberofsectorscouldbefromonesectortoallsectors.Aftertime-outperiodpassingby,additionalerasecom-mandisnotacceptedanderaseembeddedoperationbegins.

Duringsectorerasing,allcommandswillnotbeacceptedexcepthardwareresetanderasesuspendandusercancheckthestatusaschiperase.

Whentheembeddederaseoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:

CHIP ERASE

ChipEraseistoeraseallthedatawith"1"and"0"asall"1".Itneeds6cyclestowritetheactionin,andthefirsttwocyclesare"unlock"cycles,thethirdoneisaconfigurationcycle,thefourthandfiftharealso"unlock"cycles,andthesixthcycleisthechiperaseoperation.

Duringchiperasing,allthecommandswillnotbeacceptedexcepthardwarerestsortheworkingvoltageistoolowthatchiperasewillbeinterrupted.AfterChipErase,thechipwillreturntothestateofReadArray.

Whentheembeddedchiperaseoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:

*1:ThestatusQ3isthetime-outperiodindicator.WhenQ3=0,thedeviceisintime-outperiodandisacceptibletoanothersectoraddresstobeerased.WhenQ3=1,thedeviceisineraseoperationandonlyerasesuspendisvalid.*2:RY/BY#isopendrainoutputpinandshouldbeweaklyconnectedtoVDDthroughapull-upresistor.*3:Whenanattemptismadetoeraseaprotectedsector,Q7willoutputitscomplementdataorQ6continuestotogglefor100usandthedevicereturnedtoreadarraystatuswithouterasingthedataintheprotectedsector.

Status Q7 Q6 Q5 Q2 RY/BY#Inprogress 0 Toggling 0 Toggling 0Finished 1 Stoptoggling 0 1 1

Exceedtimelimit 0 Toggling 1 Toggling 0

Status Q7 Q6 Q5 Q3 Q2 RY/BY#*2Time-outperiod 0 Toggling 0 0 Toggling 0Inprogress 0 Togging 0 1 Toggling 0Finished 1 Stoptoggling 0 1 1 1Exceedtimelimit 0 Toggling 1 1 Toggling 0

16P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

When thedevicehassuspendederasing,user canexecute thecommandsetsexcept sectoreraseandchiperase,suchasreadsiliconID,sectorprotectverify,program,anderaseresume.

SECTOR ERASE RESUME

Sectoreraseresumecommandisvalidonlywhenthedeviceisinerasesuspendstate.Aftereraseresume,usercan issueanothererasesuspendcommand,but thereshouldbea400us intervalbetweeneraseresumeandthenexterasesuspend.Ifuserissueinfinitesuspend-resumeloop,orsuspend-resumeexceeds1024times,thetimeforerasingwillincrease.

SECTOR ERASE SUSPEND

Duringsectorerasure,sectorerasesuspendistheonlyvalidcommand.Ifuserissueerasesuspendcommandinthetime-outperiodofsectorerasure,devicetime-outperiodwillbeover immediatelyandthedevicewillgobacktoerase-suspendedreadarraymode.Ifuserissueerasesuspendcommandduringthesectoreraseisbe-ingoperated,devicewillsuspendtheongoingeraseoperation,andaftertheTready1(≤20us)suspendfinishesandthedevicewillentererase-suspendedreadarraymode.Usercanjudgeifthedevicehasfinishederasesus-pendthroughQ6,Q7,andRY/BY#.

Afterdevicehasenterederase-suspendedreadarraymode,usercanreadothersectorsnotaterasesuspendbythespeedofTaa;whilereadingthesectorinerase-suspendmode,devicewilloutputitsstatus.UsercanuseQ6andQ2tojudgethesectoriserasingortheeraseissuspended.

Status Q7 Q6 Q5 Q3 Q2 RY/BY#Erasesuspendreadinerasesuspendedsector 1 Notoggle 0 N/A Toggle 1Erasesuspendreadinnon-erasesuspendedsector Data Data Data Data Data 1Erasesuspendprograminnon-erasesuspendedsector Q7# Toggle 0 N/A N/A 0

17P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

ABSOLUTE MAXIMUM STRESS RATINGS

OPERATING TEMPERATURE AND VOLTAGE

Commercial (C) Grade SurroundingTemperature(TA) 0°Cto+70°CIndustrial (I) Grade SurroundingTemperature(TA) -40°Cto+85°CVCC Supply Voltages VCCrange +4.5Vto5.5V

SurroundingTemperaturewithBias -65°Cto+125°CStorageTemperature -65°Cto+150°C

VoltageRange

VCC -0.5Vto+7.0V

RESET#,A9 -0.5Vto+13.5VTheotherpins. -0.5VtoVCC+0.7V

OutputShortCircuitCurrent(lessthanonesecond) 200mA

Note:1.Mininumvoltagemayundershootto-2Vduringtransitionandforlessthan20nsduringtransitions.2.MaximumvoltagemayovershoottoVCC+2Vduringtransitionandforlessthan20nsduringtransitions.

18P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

DC CHARACTERISTICS

Symbol Description Min. Typ. Max. RemarkIilk InputLeak ± 1.0uAIolk OutputLeak 10uAIcr1 ReadCurrent(10MHz) 50mA CE#=Vil,OE#=VihIcr2 ReadCurrent(5MHz) 40mA CE#=Vil,OE#=Vih

Isb1 StandbyCurrent(TTL) 1mAVCC=VCCmax,CE#=Vihotherpindisable

Isb2 Standbycurrent(CMOS) 1uA 5uAVCC=VCCmax,CE#=VCC+0.3V,otherpindisable

Icw WriteCurrent 15mA 30mA CE#=Vil,OE#=Vih,WE#=Vil

Vil InputLowVoltage -0.3V 0.8VVih InputHighVoltage 0.7xVCC VCC+0.3V

Vhv VeryHighVoltage for hardwareProtect/Unprotect/AutoSelect/TemporaryUnprotect 11.5V 12V 12.5V

Vol OutputLowVoltage 0.45V Iol=2.1mA,VCC=VCCmin

Voh1 OuputHighVoltage(TTL) 2.4V Ioh1=-2mAVoh2 OuputHighVoltage(CMOS) Vcc-0.4V Ioh2=-100uA

19P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

SWITCHING TEST CIRCUITS

TestConditionOutputLoad:1TTLgateOutputLoadCapacitance,CL:100PFfor90ns,30PFfor70nsRise/FallTimes:10nsInputPulselevels:0.45/0.7xVCCInput/Outputreferencelevelsformeasuringtiming:0.8V,2.0V

SWITCHING TEST WAVEFORMS

R1=6.2KohmR2=2.7Kohm

TESTED DEVICE

DIODES=IN3064OR EQUIVALENT

CLR1

Vcc

0.1uFR2

Vcc

2.0V 2.0V

0.8V0.8VTEST POINTS

0.7xVCC

0.45VOUTPUTINPUT

20P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

AC CHARACTERISTICS

Symbol Description Speed Option -70/90 UnitMin. Typ. Max.Taa Validdataoutputafteraddress 70/90 nsTce ValiddataoutputafterCE#low 70/90 nsToe ValiddataoutputafterOE#low 30/35 nsTdf DataoutputfloatingafterOE#highorCE#high 20 ns

Toh Output hold time from theearliest risingedgeofAddrss,CE#,OE# 0 ns

Trc Readperiodtime 70/90 nsTwc Writeperiodtime 70/90 nsTcwc Commandwriteperiodtime 70/90 nsTas Addresssetuptime 0 nsTah Addressholdtime 45 nsTds Datasetuptime 30/45 nsTdh Dataholdtime 0 nsTcs CE#Setuptime 0 nsTch CE#holdtime 0 nsToes OE#setuptime 0 nsTcep CE#pulsewidth 35/45 nsTceph CE#pulsewidthhigh 20 nsTwp WE#pulsewidth 35 nsTwph WE#pulsewithhigh 30 nsTghwl Readrecovertimebeforewrite 0 nsTbusy Program/EraseactivetimebyRY/BY# 90 nsTavt Programoperation Byte 9 300 usTavt Programoperation Word 11 360 usTaetc ChipEraseOperation 4 32 secTaetb SectorEraseOperation 0.7 8 secTbal SectorAddressholdtime 50 us

21P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 1. COMMAND WRITE OPERATION

Addresses

CE#

OE#

WE#

DIN

Tds

Tah

Data

Tdh

Tcs Tch

Tcwc

Toes Twp Twph

Tas

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

VA

VA: Valid Address

22P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

READ/RESET OPERATION

Figure 2. READ TIMING WAVEFORMS

Addresses

CE#

OE#

Taa

WE#

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Voh

Vol

Trc

HIGH Z HIGH ZDATA Valid

Toe Tdf

Tce

Outputs

Toh

ADD Valid

23P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 3. RESET# TIMING WAVEFORM

AC CHARACTERISTICS

Trh

Trb1

Trp2

Trp1

Tready2

Tready1

RY/BY#

CE#, OE#

RESET#

Reset Timing NOT during Automatic Algorithms

Reset Timing during Automatic Algorithms

RY/BY#

CE#, OE#

Trb2

WE#

RESET#

Item Description Setup Speed UnitTrp1 RESET#PulseWidth(DuringAutomaticAlgorithms) MIN 10 usTrp2 RESET#PulseWidth(NOTDuringAutomaticAlgorithms) MIN 500 nsTrh RESET#HighTimeBeforeRead MIN 0 nsTrb1 RY/BY#RecoveryTime(toCE#,OE#golow) MIN 0 nsTrb2 RY/BY#RecoveryTime(toWE#golow) MIN 50 ns

Tready1RESET#PINLow (DuringAutomaticAlgorithms) toReadorWrite

MAX 20 us

Tready2RESET#PINLow(NOTDuringAutomaticAlgorithms)toReadorWrite

MAX 500 ns

24P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

ERASE/PROGRAM OPERATION

Figure 4. AUTOMATIC CHIP ERASE TIMING WAVEFORM

Twc

Address

OE#

CE#

55h

2AAh SA

10h

InProgress Complete

VA VA

Tas Tah

SA: 555h for chip erase

Tch

Tghwl

Tds Tdh

Taetc

Read StatusLast 2 Erase Command Cycle

Tbusy Trb

TcsWE#

Data

RY/BY#

25P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data AAH Address 555H

Write Data 80H Address 555H

YES

NOData=FFh ?

Write Data 10H Address 555H

Write Data 55H Address 2AAH

Data# Polling Algorithm or Toggle Bit Algorithm

Auto Chip Erase Completed

26P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 6. AUTOMATIC SECTOR ERASE TIMING WAVEFORM

Twc

Address

OE#

CE#

55h

2AAh SectorAddress 1

SectorAddress 0

30h

InProgress Complete

VA VA

30h

SectorAddress n

Tas

Tah

Tbal

Tch

Tds Tdh

Taetb

Read Status

Last 2 Erase Command Cycle

TbusyTrb

TcsWE#

Data

RY/BY#

30h

Tghwl

27P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data AAH Address 555H

Write Data 80H Address 555H

Write Data 30H Sector Address

Write Data 55H Address 2AAH

Data# Polling Algorithm orToggle Bit Algorithm

Auto Sector Erase Completed

NOLast Sectorto Erase

YES

YES

NOData=FFh

28P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 8. ERASE SUSPEND/RESUME FLOWCHART

START

Write Data B0H

Toggle Bit checking Q6 not toggled

ERASE SUSPEND

YES

NO

Write Data 30H

Continue Erase

Reading or Programming End

Read Array orProgram

AnotherErase Suspend ?

NO

YES

YES

NO

ERASE RESUME

29P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORMS

Address

OE#

CE#

A0h

555h PA

PD Status DOUT

VA VA

Tas Tah

Tch

Tds Tdh

Tavt

Last 2 Read Status CycleLast 2 Program Command Cycle

TbusyTrb

TcsWE#

Data

RY/BY#

Tghwl

30P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 10. CE# CONTROLLED WRITE TIMING WAVEFORM

Address

OE#

CE#

A0h

555h PA

PD Status DOUT

VA VA

Tas Tah

Tcp

Tds Tdh

Tavt or Taetb

TbusyTrb

Tcph

WE#

Data

RY/BY#

Tghwl

31P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 11. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Program Data/Address

Write Data A0H Address 555H

YES

Read Again Data:Program Data?

YES

Auto Program Completed

Data# Polling Algorithm orToggle Bit Algorithm

next address

Last Word to beProgramed

No

No

32P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

SECTOR PROTECT/CHIP UNPROTECT

Figure 12. SECTOR PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control)

150us: Sector Protect15ms: Chip Unprotect1us

Vhv

Vih

Data

SA, A6A1, A0

CE#

WE#

OE#

VA VA VA

Status

VA: valid address

40h60h60h

Verification

RESET#

33P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 13-1. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv

START

Retry count=0

RESET#=Vhv

Wait 1us

Write Sector Addresswith [A6,A1,A0]:[0,1,0]

data: 60h

Write Sector Addresswith [A6,A1,A0]:[0,1,0]

data: 40h

Read at Sector Addresswith [A6,A1,A0]:[0,1,0]

Wait 150us

Reset PLSCNT=1

Temporary Unprotect Mode

RESET#=Vih

Write RESET CMD

Sector Protect Done

Device fail

Temporary Unprotect Mode

Retry Count +1

First CMD=60h?

Data=01h?Retry Count=25?

Yes

YesYes

Yes

No

No

No

No

Protect anothersector?

34P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 13-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv

Write [A6,A1,A0]:[1,1,0]data: 60h

Write [A6,A1,A0]:[1,1,0]data: 40h

Read [A6,A1,A0]:[1,1,0]

Wait 15ms

Temporary Unprotect

Write reset CMD

Chip Unprotect Done

Retry Count +1

Device fail

All sectorsprotected?

Data=00h?Retry Count=1000?

YesYes

No

No

Yes

Protect All Sectors

START

Retry count=0

RESET#=Vhv

Wait 1us

Temporary Unprotect

First CMD=60h?

Yes

No

No

35P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 14. TEMPORARY SECTOR UNPROTECT WAVEFORMS

Table 5. TEMPORARY SECTOR UNPROTECT

RESET#

CE#

WE#

RY/BY#

Trpvhh

12VVhv

0 or 5V 0 or 5V

Tvhhwl

Trpvhh

Program or Erase Command Sequence

Parameter Alt Description Condition Speed UnitTrpvhh Tvidr RESET#RiseTimetoVhvandVhvFallTimetoRESET# MIN 500 nsTvhhwl Trsp RESET#VhvtoWE#Low MIN 4 us

36P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 15. TEMPORARY SECTOR UNPROTECT FLOWCHART

Notes:1.TemporaryunprotectallprotectedsectorsVhv=11.5~12.5V.2.Theprotectedconditionsoftheprotectedsectorsarethesametotemporarysectorunprotectmode.

Start

Apply RESET# pin Vhv Volt

Enter Program or Erase Mode

(1) Remove Vhv Volt from RESET#(2) RESET# = Vih

Completed Temporary SectorUnprotected Mode

Mode Operation Completed

37P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 16. SILICON ID READ TIMING WAVEFORM

Taa

Tce

Taa

Toe

Toh Toh

Tdf

DATA OUT

C2H 51H (TOP boot)57H (Bottom boot)

Vhv

Vih

VilA9

ADD

CE#

A1

OE#

WE#

A0

DATA OUTDATAQ0-Q7

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

38P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

WRITE OPERATION STATUS

Figure 17. DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)

Tdf

Tce

Tch

Toe

Toh

CE#

OE#

WE#

Q7

Q0-Q6

RY/BY#

Tbusy

Status Data Status Data

ComplementComplement True Valid Data

Taa

Address VAVA

High Z

High ZValid DataTrue

39P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 18. DATA# POLLING ALGORITHM

Read Q7~Q0 at valid address(Note 1)

Read Q7~Q0 at valid address

Start

Q7 = Data# ?

Q5 = 1 ?

Q7 = Data# ?(Note 2)

FAIL Pass

No

No

No

Yes

Yes

Yes

Notes:1. Forprogramming,validaddressmeansprogramaddress. Forerasing,validaddressmeanserasesectorsaddress.2. Q7shouldberecheckedevenQ5="1"becauseQ7maychangesimultaneouslywithQ5.

40P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 19. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)

Tdf

Tce

Tch

Toe

Taa

Toh

Address

CE#

OE#

WE#

Q6/Q2

RY/BY#

Tbusy

Valid Status

(first read)

Valid Status

(second read) (stops toggling)

Valid Data

VA VAVA

Notes:

1. VA : Valid Address

2. CE# must be toggled when toggle bit toggling.

VA

Valid Data

41P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

Figure 20. TOGGLE BIT ALGORITHM

Notes:1.Readtogglebittwicetodeterminewhetherornotitistoggling.2.RechecktogglebitbecauseitmaystoptogglingasQ5changesto"1".

Read Q7-Q0 Twice

Q5 = 1?

Read Q7~Q0 Twice

Program/Erase failWrite Reset CMD Program/Erase Complete

Q6 Toggle ?

Q6 Toggle ?

NO

(Note1)

(Note1, 2)

YES

NO

NO

YES

YES

Start

42P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

RECOMMENDED OPERATING CONDITIONS

At Device Power-Up

ACtimingillustratedin"Figure A. AC Timing at Device Power-Up"isrecommendedforthesupplyvoltagesandthecontrolsignalsatdevicepower-up.Ifthetiminginthefigureisignored,thedevicemaynotoperatecorrectly.

Figure A. AC Timing at Device Power-Up

Vcc

ADDRESS

CE#

WE#

OE#

DATA

Tvr

TaaTr or Tf Tr or Tf

TceTf

Vcc(min)

GND

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Voh High ZVol

ValidOuput

ValidAddress

Tr

ToeTfTr

Symbol Parameter Min. Max. UnitTvr VccRiseTime 20 500000 us/VTr InputSignalRiseTime 20 us/VTf InputSignalFallTime 20 us/V

43P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

LATCH-UP CHARACTERISTICS

ERASE AND PROGRAMMING PERFORMANCE

TSOP AND SOP PIN CAPACITANCE

Note: 1.Typicalconditionmeans25°C,5V. 2.Maximumconditionmeans90°C,4.5V,100Kcycles.

Parameter Symbol Parameter Description Test Set TYP MAX UNITCIN2 ControlPinCapacitance VIN=0 12 pFCOUT OutputCapacitance VOUT=0 12 pFCIN InputCapacitance VIN=0 8 pF

MIN. MAX.InputVoltagedifferencewithGNDonallpinsexceptI/Opins -1.0V 13.5VInputVoltagedifferencewithGNDonallI/Opins -1.0V VCC+1.0VVccCurrent -100mA +100mAIncludesallpinsexceptVCC.Testconditions:VCC=5V,onepinpertesting

PARAMETER LIMITS UNITSMIN. TYP. MAX.ByteProgrammingTime 9 300 usWordProgrammingTime 11 360 usSectorEraseTime 0.7 8 secChipEraseTime 4 32 sec

ChipProgrammingTimeByteMode 2.3 6.8 secWordMode 1.5 4.5 sec

Erase/ProgramCycles 100,000 Cycles

DATA RETENTIONPARAMETER Condition Min. Max. UNITDataretention 55˚C 20 years

44P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

ORDERING INFORMATION

PART NO.ACCESS TIME (ns)

OPERATING Current MAX. (mA)

STANDBY Current MAX. (mA)

PACKAGE Remark

MX29F200CTMI-70 70 40 5 44PinSOPMX29F200CTMI-90 90 40 5 44PinSOP

MX29F200CTTI-70 70 40 548PinTSOP(NormalType)

MX29F200CTTI-90 90 40 548PinTSOP(NormalType)

MX29F200CBMI-70 70 40 5 44PinSOPMX29F200CBMI-90 90 40 5 44PinSOP

MX29F200CBTI-70 70 40 548PinTSOP(NormalType)

MX29F200CBTI-90 90 40 548PinTSOP(NormalType)

MX29F200CTMI-70G 70 40 5 44PinSOP MX29F200CTMI-90G 90 40 5 44PinSOP

MX29F200CTTI-70G 70 40 548PinTSOP(NormalType)

MX29F200CTTI-90G 90 40 548PinTSOP(NormalType)

MX29F200CBMI-70G 70 40 5 44PinSOP MX29F200CBMI-90G 90 40 5 44PinSOP

MX29F200CBTI-70G 70 40 548PinTSOP(NormalType)

MX29F200CBTI-90G 90 40 548PinTSOP(NormalType)

45P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

PART NAME DESCRIPTION

MX 29 F 70C T T I GOPTION:G: RoHS Compliant packageblank: normal

SPEED:70:70ns90: 90ns

TEMPERATURE RANGE:I: Industrial (-40°C to 85°C)

PACKAGE:M:SOPT: TSOP

BOOT BLOCK TYPE:T: Top BootB: Bottom Boot

REVISION:C

DENSITY & MODE:200: 2M, x8/x16 Boot Sector

TYPE:F: 5V

DEVICE:29: Flash

200

46P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

PACKAGE INFORMATION

47P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

48P/N:PM1250 REV. 2.0, DEC. 04, 2012

MX29F200C T/B

REVISION HISTORY

Revision No. Description Page Date1.0 1.Removed"Preliminary"title P1 DEC/14/2005 2.Removedcommercialgrade All 3.Addedaccesstime:55ns All1.1 1.Removedaccesstime:55ns P1,18,19,22 JUN/20/2006 P23,40,41 2.Removedsectorprotect/chipunprotectwithout12V P1,7,14,32~35 3.Addedin-systemsectorprotect/chipunprotect P34~36 4.Addeddata#polling,togglebitalgorithm P27,28 5.AddedRY/BY#timingwaveform P25,29,311.2 1.DataSheetFormatchanged All AUG/15/20061.3 1.Datamodification All AUG/17/20061.4 1.Addedstatement P47 NOV/06/20061.5 1.Addednote4into"TABLE 3. MX29F200C T/B COMMAND DEFINITIONS"P10 JAN/22/20081.6 1.Modified"Figure 10. CE# CONTROLLED WRITE TIMING WAVEFORM" P28 FEB/21/20081.7 1.Modified"Figure 10. CE# CONTROLLED WRITE TIMING WAVEFORM" P28 MAR/09/2009 (Changed"Twhwh1orTwhwh2"into"TavtorTaetb") 2.ModifiedFigure12.DATA#POLLINGTIMINGWAVEFORM P361.8 1.AddednoteofAbsoluteMaximumStressRatings P15 MAY/25/2009 2.AddedTrc,Twp,Twph&Tghwl P18,22,24,27 P28 3.AddedIcw P161.9 1.Addeddataretentiontable P41 JUN/30/2009 2.Modifiedthesectorerasetimemaxfrom15sto8s P18,412.0 1.ModifieddescriptionforRoHScompliance P1,44,45 DEC/04/2012 2.ModifiedOutputLoadCapatitance P19

MX29F200C T/B

49

MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.

Except forcustomizedproductswhichhasbeenexpressly identified in theapplicableagreement,Macronix'sproducts aredesigned, developed, and/ormanufactured for ordinary business, industrial, personal, and/orhouseholdapplicationsonly,andnotforuseinanyapplicationswhichmay,directlyorindirectly,causedeath,personalinjury,orseverepropertydamages.IntheeventMacronixproductsareusedincontradictedtotheirtargetusageabove,thebuyershalltakeanyandallactionstoensuresaidMacronix'sproductqualifiedforitsactualuseinaccordancewiththeapplicablelawsandregulations;andMacronixaswellasit’ssuppliersand/ordistributorsshallbereleasedfromanyandallliabilityarisentherefrom.

Copyright©Macronix InternationalCo., Ltd. 2005~2012.All rights reserved, including the trademarksandtradenamethereof,suchasMacronix,MXIC,MXICLogo,MXLogo,IntegratedSolutionsProvider,NBit,Nbit,NBiit,MacronixNBit,eLiteFlash,HybridNVM,HybridFlash,XtraROM,Phines,KHLogo,BE-SONOS,KSMC,Kingtech,MXSMIO,MacronixvEE,MacronixMAP,RichAudio,RichBook,RichTV,andFitCAM.Thenamesandbrandsofthirdpartyreferredthereto(ifany)areforidentificationpurposesonly.

Forthecontactandorderinformation,pleasevisitMacronix’sWebsiteat:http://www.macronix.com