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MTT 2002 Seattle June 5th S. K. Leong. LDMOS and Vdmos 30 - 512 Mhz BroadBand Amps. 30 - 512 Mhz Broadband Amps. A. 30 - 512 Multi-octave Military Amplifiers covering tactical ground, air, civil and those of allies. B. Polyfet Technical Bulletins Different Output Power and Gain - PowerPoint PPT Presentation
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MTT 2002Seattle June 5th
S. K. Leong
LDMOS and Vdmos
30 - 512 Mhz BroadBand Amps
30 - 512 Mhz Broadband AmpsA. 30 - 512 Multi-octave Military Amplifiers covering tactical ground, air, civil and those of allies.
B. Polyfet Technical Bulletins •Different Output Power and Gain•28V and 12.5V voltage supplies
C. 4:1 Broadband matching•Variable transformation ratio to match transistor Zin• Small physical size.
D. Computer Simulation results
Polyfet Technical Bulletins
Design Considerations• Load line required by device changes with frequency
• Load Pull techniques not practical for high power and low frequencies.
• Computer simulation using Spice model is preferred.
• 4:1 Most practical transformer for broadband
• Use effective inductance of coaxial transmission line as the inductive component in the PI matching network. Keep overall physical dimension small. (A lumped 4:1 replacing a 4:1 plus a low pass network)
Zin and Zout of Transistor
4:1 Transformer with Balun
4:1 TransformerFrequency ZIN[1] ZIN[1]
(GHz) Coax Transformer Coax Transformer (Real) (Imag)
0.03 11.10 4.920.08 12.94 1.910.13 13.07 0.940.18 12.99 0.450.23 12.87 0.170.28 12.73 0.020.33 12.60 -0.050.38 12.49 -0.060.43 12.41 -0.040.48 12.37 0.000.53 12.36 0.050.58 12.37 0.080.6 12.38 0.09
4:1 Transformer
0 1.0
1.0
-1.0
10.0
5.0
2.0
3.0
4.0
0.2
0.4
0.6
0.8
S11 4:1 TransformerSwp Max
0.6GHz
Swp Min
0.03GHz
0.2612 GHzr 0.255597x 0.00151298
S[1,1]Coax Transformer
4:1 with embedded lump matching
1 2
3 4
COAXI4
F=A=K=L=Z=
ID=
1 GHz0 2.3 3000 mil21 CX1
12
34
COAXI4
F=A=K=L=Z=
ID=
1 GHz0 2.3 3000 mil21 CX2
IND
L=ID=
500 nHL1
IND
L=ID=
500 nHL2
IND
L=ID=
500 nHL3
IND
L=ID=
500 nHL4
CAP
C=ID=
24 pFC1
CAP
C=ID=
3 pFC2
IND
L=ID=
2 nHL5
1
2
3
BALUN2
L=Mu=
F=A=
Er=Len=Zo=ID=
100 nH125 1 GHz0 dB2 2500 mil50 OhmBU1
CAP
C=ID=
1.1 pFC3
LOAD
Z=ID=
50 OhmZ1
PORT_PS1
PStep=PStop=PStart=
Z=P=
0 dB-30 dBm-30 dBm50 Ohm1
4:1 with embedded lump matchingFrequency ZIN[1] ZIN[1](GHz) Coax Transformer Coax Transformer
(Real) (Imag)0.03 11.91 4.130.08 12.17 -1.020.13 10.06 -2.170.18 8.35 -1.770.23 7.29 -0.790.28 6.75 0.340.33 6.64 1.420.38 6.83 2.330.43 7.21 2.950.48 7.62 3.220.53 7.86 3.200.58 7.80 3.050.6 7.69 2.99
• At low freq., matched to load line rather than impedance
4:1 with embedded lump matching
0 1.0
1.0
-1.0
10.0
5.0
2.0
3.0
4.0
0.2
0.4
0.6
0.8
S11 4:1 Matched to Transistor ZinSwp Max
0.6GHz
Swp Min
0.03GHz
0.261222869 GHzr 0.137995x -0.00171285
S[1,1]Coax Transformer
Picture of TB-160
Link to Application Note TB160
TB-160 Topview
TB-160 Sim. Schematic
CAP
C=ID=
1.1 pFC4
DCVS
V=ID=
2. 72 VVg
CAP
C=ID=
750 pFC2
1
2
3
CIRC
ISOL=LOSS=
R=ID=
100 dB0.001 dB50 OhmU3
DCVS
V=ID=
28 VVdd
I_METERID=Idrain
V_METERID=Drain Voltage
CAP
C=ID=
470 pFC1
CAP
C=ID=
470 pFC5
RES
R=ID=
9 OhmR2
RES
R=ID=
9 OhmR3
1 2
3 4
COAXI 4
F=A=K=L=Z=
ID=
1 GHz0 2 2500 mil17 CX4
12
34
COAXI 4
F=A=K=L=Z=
ID=
1 GHz0 2 2500 mil17 CX5
IND
L=ID=
1.012 nHL1
IND
L=ID=
1.012 nHL4
IND
L=ID=
1.5 nHL5
IND
L=ID=
1.5 nHL6
1
2
3
BALUN2
L=Mu=
F=A=Er=
Len=Zo=ID=
20 nH200 1 GHz0 dB2.1 2500 mil50 OhmBU1
1 2
3 4
COAXI 4
F=A=K=L=Z=
ID=
1 GHz0 2 3000 mil21 CX2
12
34
COAXI 4
F=A=K=L=Z=
ID=
1 GHz0 2 3000 mil21 CX6
CAP
C=ID=
1000 pFC3
CAP
C=ID=
1000 pFC6
CAP
C=ID=
3 pFC7
1
2
3
BALUN2
L=Mu=
F=A=Er=
Len=Zo=ID=
20 nH125 1 GHz0 dB1 2500 mil50 OhmBU2
IND
L=ID=
1000 nHL2 IND
L=ID=
1000 nHL7
IND
L=ID=
1000 nHL8
CAP
C=ID=
1000 pFC8
IND
L=ID=
1000 nHL3
RES
R=ID=
15 OhmR1
IND
L=ID=
15 nHL9
CAP
C=ID=
1e4 pFC9
CAP
C=ID=
1e4 pFC 10
IND
L=ID=
15 nHL10
RES
R=ID=
15 OhmR4
CAP
C=ID=
1e4 pFC 11
IND
L=ID=
15 nHL11 RES
R=ID=
100 OhmR5
CAP
C=ID=
1e4 pFC 12
IND
L=ID=
15 nHL12
RES
R=ID=
100 OhmR6
CAP
C=ID=
24.4 pFC 13
PRL
L=R=ID=
1000 nH22 OhmR L2
IND
L=ID=
1000 nHL13
IND
L=ID=
1000 nHL14
IND
L=ID=
1000 nHL15
IND
L=ID=
1000 nHL16
IND
L=ID=
500 nHL17
IND
L=ID=
500 nHL18
1 2
3
SUBCKT
N ET=ID=
"LX401MOD" S1
1 2
3
SUBCKT
N ET=ID=
"LX401MOD" S2
PORT1
P wr=Z=P=
38 dBm50 Ohm1
PORT
Z=P=
50 Ohm2
PORT
Z=P=
50 Ohm3
TB-160 30-512 Mhz Broad Band Amplifier
Link to AWR simulation file
MWO Simulation with layout
MWO Simulation. Pin =30dbm
Actual Measurement Pin=30dbmTB-160A LR401 Freq vs Gain/Efficiency; Vds=28Vdc Idq=1A
-15
-10
-5
0
5
10
15
0 50 100 150 200 250 300 350 400 450 500 550 600
Freq in MHz
-15
-10
-5
0
5
10
15
Return Loss
Gain
Pin fixed at 1W; 30 dBm
MWO Simulation. High Pin
Actual Measurement Pin=38dbmTB-160A LR401 Freq vs Gain/Efficiency; Vds=28Vdc Idq=1A
-15
-10
-5
0
5
10
15
0 50 100 150 200 250 300 350 400 450 500 550 600
Freq in MHz
10
20
30
40
50
60
70
80
90
100
Efficiency
Gain
Pin fixed at 6.3W; 38 dBm
Simulated Pin Pout at 250 Mhz
Measured Pin Pout at 250 MhzTB-160A Pin vs Pout Freq=250MHz Vds=28Vdc Idq=1A
30
35
40
45
50
55
20.00 22.00 24.00 26.00 28.00 30.00 32.00 34.00 36.00 38.00
Pin in dBm
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
Efficiency @60W= 40%
Pout
Gain
S11
TB160 ADS Small Signal Simulated
TB-160 ADS Pwr Simulated
Simulators
This circuit has been successfully simulated using•AWR Microwave Office 2002 Ver 5.5•Agilent ADS
Results are comparable between simulators
Conclusion
• Achieved multi octave broad banding with both Ldmos and Vdmos at high RF Output Levels
• Good correlation between Actual Measurements to Simulation using Polyfet Spice Models
•Small physical size matching network made possible by using inherent inductance of coaxial transmission lines along with shunt capacitance.
•Transistor impedance changes with frequency.