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MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45 pm tbook: Silicon VLSI Technology, J.D. Plummer, M.D. Deal and P.B. Griffi Prentice Hall, ISBN: 0-13-085037-3, 2000 Course Description: Electrical behaviors of materials; conductors, semiconductors and insulators; electronic structure of materials; preparation of semiconductor materials; crystal growth and doping; intrinsic and extrinsic semiconductors; semiconductor devices; superconductivity and superconducting materials; photoelectron effects with semiconductors; photovoltaic materials and solar cells; imperfections in semiconductors; characterization of electronic materials.

MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

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Page 1: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

MSE 630, Semiconductor MaterialsTh 7:00-9:45 pm, JD-1551

Dr. R. D. ConnerOffice, JD 3511, phone 818 677-4730

Office hrs: T, Th: 10-10:45 AM, 6:00-6:45 pm

Textbook: Silicon VLSI Technology, J.D. Plummer, M.D. Deal and P.B. Griffin, Prentice Hall, ISBN: 0-13-085037-3, 2000

Course Description: Electrical behaviors of materials; conductors, semiconductors and insulators; electronic structure of materials; preparation of semiconductor materials; crystal growth and doping; intrinsic and extrinsic semiconductors; semiconductor devices; superconductivity and superconducting materials; photoelectron effects with semiconductors; photovoltaic materials and solar cells; imperfections in semiconductors; characterization of electronic materials.

Page 2: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Date Lecture Seminar topics Aug. 26 Materials basics Electronic devicesSept. 2 Electrical conduction in materials How semiconductors workSept. 9 Quantum Mechanics Silicon device fabricationSept. 16 Phonons Superconductivity/1st paper

dueSept. 23 Magnetism Magnetic storage Sept. 30 Silicon wafer growth Defects in Si semiconductorsOct. 7 Clean rooms & manufacturing III-IV semiconductorsOct. 14 Midterm exam LithographyOct. 21 Thermal oxidation Solar CellsOct. 28 Diffusion Ionic computing/2nd paper

dueNov. 4 Ion implantation Amorphous semiconductorsNov. 11 Veterans dayNov. 18 Thin film techniques Biological computers/MEMSNov. 25 ThanksgivingNov. 30 Etching Student Presentations Dec. 2 Student PresentationsDec. 9 Final Exam 8 PM 

Course Outline

Page 3: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Grading:

Assignments 10%

Presentation/Term papers 60%

Mid-term exam 10%

Final Exam 20%

Term Paper & PresentationEach student will write two short research papers and make one presentation on a relevant topic of their choice. Length of term paper: 4 pages. Format for the report is Title page with, Summary (or abstract), Introduction, Body (subtitles), Conclusion, and References. References MUST come from peer-review literature. NO internet references are acceptable. Sorry, but Wikipedia is OK for background, but does not count as a reference!

Page 4: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 5: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 6: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 7: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 8: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 9: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 10: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 11: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 12: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 13: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 14: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 15: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Ionic Bond – electron transfer and electrostatic attraction

Non directional

Page 16: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Covalent Bond: electron sharing for stable outer shellsHighly directional

Page 17: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Metallic bond: electron sharing between charged ion coresNon directional

Page 18: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

The bond type influences the mechanical properties

Both ionic and metallic bonds form close packed structures. Ions, though, have to maintain charge neutrality, so any deformation in ionic solids must be large enough to move the atoms back into registry. Metals do not have this restriction. Hence, ionic solids are brittle, while metals are ductile.

Page 19: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Other, weaker bonds

Hydrogen bond: hydrogen acts as infinitesimal cation attracting two anions

van der Waals bond: weak attraction between molecular dipoles

Page 20: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 21: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

The crystal lattice

A point lattice is made up of regular, repeating points in space. An atom or group of atoms are tied to each lattice point

Page 22: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45
Page 23: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

14 different point lattices, called Bravais lattices, make up the crystal system. The lengths of the sides, a, b, and c, and the angles between them can vary for a particular unit cell.

Page 24: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Three simple lattices that describe metals are Face Centered Cubic (FCC) Body Centered Cubic (BCC) and Hexagonal Close Packed (HCP)

Page 25: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Whether a close packed crystal is FCC or HCP depends upon the stacking sequence of close packed planes

Page 26: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Diamond, BeO and GaAs are examples of FCC structures with two atoms per lattice point

Page 27: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Polymers are made up of repeating units “mers”, that make up a long chain. The chain may be cross-linked, or held together with van der Waals or

hydrogen bonds

Page 28: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Structures may be crystalline, having repeating structure, or amorphous, having local structure but no long-range structure

Page 29: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Directions in a crystal lattice – Miller Indices

Vectors described by multiples of lattice constants: ua+vb+wc

e.g., the vector in the illustration crosses the edges of the unit cell at u=1, v=1, c=1/2

Arrange these in brackets, and clear the fractions:

[1 1 ½] = [2 2 1]

Page 30: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Negative directions have a bar over the number

e.g., _

11

Families of crystallographically equivalent directions, e.g., [100], [010], [001] are written as <uvw>, or, in this example, <100>

Page 31: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Directions in HCP crystals

'

)''(

)''2(3

)''2(3

][]'''[

nww

vut

uvn

v

vun

u

uvtwwvu

a1, a2 and a3 axes are 120o apart, z axis is perpendicular to the a1,a2,a3 basal plane

Directions in this crystal system are derived by converting the [u′v′w′] directions to [uvtw] using the following convention:

n is a factor that reduces [uvtw] to smallest integers. For example, if

u′=1, v′=-1, w′=0, then

[uvtw]= ]0011[_

Page 32: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Crystallographic Planes

To find crystallographic planes are represented by (hkl). Identify where the plane intersects the a, b and c axes; in this case, a=1/2, b=1, c=∞

Write the reciprocals 1/a, 1/b, 1/c:

11

12

11

l

k

h

Clear fractions, and put into parentheses:

(hkl)=(210)

Page 33: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

If the plane interesects the origin, simply translate the origin to an equivalent location.

Families of equivalent planes are denoted by braces:

e.g., the (100), (010), (001), etc. planes are denoted {100}

Page 34: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Planes in HCP crystals are numbered in the same way

e.g., the plane on the left intersects a1=1, a2=0, a3=-1, and z=1, thus the plane is )1110(

_

Page 35: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

3

• tend to be densely packed.

• have several reasons for dense packing:-Typically, only one element is present, so all atomic radii are the same.-Metallic bonding is not directional.-Nearest neighbor distances tend to be small in order to lower bond energy.

• have the simplest crystal structures.

METALLIC CRYSTALS

Page 36: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

11

Example: Copper

n AVcNA

# atoms/unit cell Atomic weight (g/mol)

Volume/unit cell

(cm3/unit cell)Avogadro's number (6.023 x 1023 atoms/mol)

Data from Table inside front cover of Callister (see next slide):• crystal structure = FCC: 4 atoms/unit cell• atomic weight = 63.55 g/mol (1 amu = 1 g/mol)• atomic radius R = 0.128 nm (1 nm = 10 cm)-7

Vc = a3 ; For FCC, a = 4R/ 2 ; Vc = 4.75 x 10-23cm3

Compare to actual: Cu = 8.94 g/cm3Result: theoretical Cu = 8.89 g/cm3

THEORETICAL DENSITY,

Page 37: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

15

• Charge Neutrality: --Net charge in the structure should be zero.

--General form: AmXp

m, p determined by charge neutrality• Stable structures: --maximize the # of nearest oppositely charged neighbors.

- -

- -+

unstable

- -

- -+

stable

- -

- -+

stable

CaF2: Ca2+cation

F-

F-

anions+

IONIC BONDING & STRUCTURE

Page 38: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

16

• Coordination # increases with Issue: How many anions can you arrange around a cation?

rcationranion

rcationranion

Coord #

< .155 .155-.225 .225-.414 .414-.732 .732-1.0

ZnS (zincblende)

NaCl (sodium chloride)

CsCl (cesium chloride)

2 3 4 6 8

COORDINATION # AND IONIC RADII

Page 39: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

X-ray diffraction and crystal structure

• X-rays have a wave length, Å.• This is on the size scale of the structures

we wish to study X-rays interfere constructively when the interplanar spacing is related to an integer number of wavelengths in accordance with Bragg’s law:

sin2dn

Page 40: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Because of the numbering system, atomic planes are perpendicular to their corresponding vector,

e.g., (111) is perpendicular to [111]

The interplanar spacing for a cubic crystal is:

222 lkh

adhkl

Because the intensity of the diffracted beam varies depending upon the diffraction angle, knowing the angle and using Bragg’s law we can obtain the crystal structure and lattice parameter

Page 41: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

The Reciprocal Lattice and Waves in Crystals

We use the reciprocal lattice to calculate wave behavior in crystals because sound, optical and electrical properties pass through the crystal as waves

Because crystals are periodic, properties throughout the crystal will be the same as those surrounding any lattice point, contained in a volume known as a “Brillion Zone”

Page 42: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

First brillion zone in a 2-D lattice

Page 43: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Brillion Zones

BCC Brillion Zone FCC Brillion Zone

Brillion Zones are the same as Wigner-Seitz cells in reciprocal space

Page 44: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Why do we need reciprocal space?

Because waves or vibrations can be made up of a series of waves of other frequencies, i.e., expressed as a Fourier Series:

)sin()cos()(

)exp()(

rGirGnrn

or

riGnrn

g

G

We want G∙r to equal 2

at boundaries. Therefore ijji ab

ora

b

2

2

Page 45: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

The Reciprocal Lattice

To analyze the atomic structure and resulting properties of crystals, we introduce the concept of the “reciprocal lattice”

A reciprocal lattice vector is defined as

G = 1b1 + 2b2 + 3b3

Where 1, 2, 3 are integers and b1, b2 and b3 are primitive vectors in the reciprocal lattice

Page 46: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Wave reflection in reciprocal space

The reciprocal lattice vector, G = k

Page 47: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

Calculating the reciprocal lattice

We construct the axis vectors b1, b2 and b3 of the reciprocal lattice using the following formulas: )(

2

)(2

)(2

321

213

321

132

321

321

aaa

aab

aaa

aab

aaa

aab

Page 48: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45

zyxaa

zyxaa

zyxaa

ˆˆˆ2

1

ˆˆˆ2

1

ˆˆˆ2

1

3

2

1

BCC primitive lattice vectors: FCC primitive lattice vectors:

xzaa

zyaa

yxaa

ˆˆ2

1

ˆˆ2

1

ˆˆ2

1

3

2

1

Page 49: MSE 630, Semiconductor Materials Th 7:00-9:45 pm, JD-1551 Dr. R. D. Conner Office, JD 3511, phone 818 677-4730 Office hrs: T, Th: 10-10:45 AM, 6:00-6:45