7
The RF Line . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. High Common Emitter Power Gain Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.0 dB Min Efficiency = 55% Min Load Mismatch Capability at Rated Voltage and RF Drive Silicon Nitride Passivated Low Intermodulation Distortion, d 3 = –30 dB Typ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 16 Vdc Collector–Base Voltage V CBO 36 Vdc Emitter–Base Voltage V EBO 4.0 Vdc Collector Current — Continuous I C 8.0 Adc Total Device Dissipation @ T C = 25°C (1) Derate above 25°C P D 100 0.57 Watts W/°C Storage Temperature Range T stg – 65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) R θJC 1.75 °C/W ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 20 mAdc, I B = 0) V (BR)CEO 16 Vdc Collector–Emitter Breakdown Voltage (I C = 20 mAdc, V BE = 0) V (BR)CES 36 Vdc Emitter–Base Breakdown Voltage (I E = 5.0 mAdc, I C = 0) V (BR)EBO 4.0 Vdc Collector Cutoff Current (V CB = 15 Vdc, I E = 0) I CBO 10 mAdc ON CHARACTERISTICS DC Current Gain (I C = 4.0 Adc, V CE = 5.0 Vdc) h FE 10 70 150 DYNAMIC CHARACTERISTICS Output Capacitance (V CB = 12.5 Vdc, I E = 0, f = 1.0 MHz) C ob 90 125 pF NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA 40 W, 145 – 175 MHz RF POWER TRANSISTORS NPN SILICON CASE 145A–09, STYLE 1 Motorola, Inc. 1994

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Page 1: MRF240

1MRF240MOTOROLA RF DEVICE DATA

The RF Line� ������

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. . . designed for 13.6 volt VHF large–signal class C and class AB linear poweramplifier applications in commercial and industrial equipment.

• High Common Emitter Power Gain

• Specified 13.6 V, 160 MHz Performance:Output Power = 40 WattsPower Gain = 9.0 dB MinEfficiency = 55% Min

• Load Mismatch Capability at Rated Voltage and RF Drive

• Silicon Nitride Passivated

• Low Intermodulation Distortion, d3 = –30 dB Typ

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO 16 Vdc

Collector–Base Voltage VCBO 36 Vdc

Emitter–Base Voltage VEBO 4.0 Vdc

Collector Current — Continuous IC 8.0 Adc

Total Device Dissipation @ TC = 25°C (1)Derate above 25°C

PD 1000.57

WattsW/°C

Storage Temperature Range Tstg –65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (2) RθJC 1.75 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICSCollector–Emitter Breakdown Voltage

(IC = 20 mAdc, IB = 0)V(BR)CEO 16 — — Vdc

Collector–Emitter Breakdown Voltage(IC = 20 mAdc, VBE = 0)

V(BR)CES 36 — — Vdc

Emitter–Base Breakdown Voltage(IE = 5.0 mAdc, IC = 0)

V(BR)EBO 4.0 — — Vdc

Collector Cutoff Current(VCB = 15 Vdc, IE = 0)

ICBO — — 10 mAdc

ON CHARACTERISTICSDC Current Gain

(IC = 4.0 Adc, VCE = 5.0 Vdc)hFE 10 70 150 —

DYNAMIC CHARACTERISTICSOutput Capacitance

(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)Cob — 90 125 pF

NOTES: (continued)1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Order this documentby MRF240/D

�����SEMICONDUCTOR TECHNICAL DATA

������

40 W, 145–175 MHzRF POWER

TRANSISTORSNPN SILICON

CASE 145A–09, STYLE 1

Motorola, Inc. 1994

Page 2: MRF240

MRF2402

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)

Characteristic UnitMaxTypMinSymbol

FUNCTIONAL TESTSCommon–Emitter Amplifier Power Gain

(VCC = 13.6 Vdc, Pout = 40 W, f = 160 MHz)GPE 9.0 10 — dB

Collector Efficiency(VCC = 13.6 Vdc, Pout = 40 W, f = 160 MHz)

η 55 — — %

TYPICAL SSB PERFORMANCEIntermodulation Distortion (3)

(VCC = 13.6 Vdc, Pout = 35 W (PEP), f1 = 146 MHz,f2 = 146.002 MHz, ICQ = 50 mAdc)

IMD (d3) — –30 — dB

NOTE:3. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

Figure 1. 160 MHz Test Circuit Schematic

RFINPUT

RFOUTPUT

+13.6 VC8

C6C5

C4C3C2

L1

C11C10

RFC2

C9

RFC1

C1

L4

+

L2 L3

BEAD

DUT

L5 C7

RFC3

+

C1 — 200 pF, 350 Vdc, UNELCOC2 — 100 pF, 350 Vdc, UNELCOC3 — 40 pF, 350 Vdc, UNELCOC4, C5 — 80 pF, 350 Vdc, UNELCOC6 — 1.0–20 pF, ARCO TrimmerC7 — 100 pF 350 Vdc, UNELCOC8 — 0.1 µF ERIE Disc CeramicC9 — 1.0 µF TANTALUM

C10, C11 — 680 pF ALLEN BRADLEY FeedthruRFC1 — 0.15 µH Molded ChokeRFC2 — 10 Turns, #18 AWG on 470 Ohm,RFC2 — 1.0 Watt ResistorBead — FERROXCUBE BeadRFC3 — FERROXCUBE Choke, VK200–4BL1 — 3.3 x 0.2 cm AIRLINE InductorL2 — 1.0 x 0.2 cm AIRLINE Inductor

L3 — 1.2 x 0.6 cm Brass PadL4 — 1.2 x 0.6 cm Brass Pad andL4 — 2.0 x 0.2 cm AIRLINE Inductor

Board — G10, εr = 5, t = 62 milsBoard — 2 sided, 2 oz. Clad

Connectors: Type N

Page 3: MRF240

3MRF240MOTOROLA RF DEVICE DATA

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

Figure 6. Output Power versus Supply Voltage

12

G, P

OW

ER G

AIN

(dB)

P out

, OU

TPU

T PO

WER

(WAT

TS)

PE11

10

9

8

7140 150 160 170 180 190

f, FREQUENCY (MHz)

60

50

40

30

208 10 12 14 16 18

VCC, SUPPLY VOLTAGE (VOLTS)

9 11 13 15 17

VCC = 13.6 V

160 MHz

4 W

Pout = 40 W

VCC = 13.6 V

12.5 W

Pin = 5 W

75 MHz

Pin = 5 W

P out

, OU

TPU

T PO

WER

(WAT

TS)

60

50

40

30

208 10 12 14 16 18

VCC, SUPPLY VOLTAGE (VOLTS)

9 11 13 15 17

P out

, OU

TPU

T PO

WER

(WAT

TS)

50

40

30

20

101 2 3 4 5 6

Pin, INPUT POWER (WATTS)

P out

, OU

TPU

T PO

WER

(WAT

TS)

60

50

40

30

208 10 12 14 16 18

VCC, SUPPLY VOLTAGE (VOLTS)

9 11 13 15 17

Pin = 5 W

f = 145 MHz

3 W

4 W

3 W

f = 145 MHz f = 160 MHz

f = 175 MHz

4 W

3 W

Page 4: MRF240

MRF2404

MOTOROLA RF DEVICE DATA

Figure 7. Series Equivalent Input/Output Impedances

ZOL*

Zin

f = 145 MHz175

160

175160

ZOL* = Conjugate of the optimum loadZOL* = impedance into which the deviceZOL* = operates at a given output power,ZOL* = voltage and frequency.

Pout = 40 W, VCC = 13.6 Vdc

fMHz

ZinOhms

ZOL*Ohms

145160175

1.0 + j0.50.98 + j0.60.98 + j0.7

2.8 + j0.32.7 + j0.42.6 + j0.5

5.0

4.0

2.0

1.0

0

–J4.0

+J1.0

–J3.0

–J2.0

–J1.0

+J2.0

+J3.0

+J4.0

3.0f = 145 MHz

Page 5: MRF240

5MRF240MOTOROLA RF DEVICE DATA

PACKAGE DIMENSIONS

CASE 145A–09ISSUE M

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.

STYLE 1:PIN 1. EMITTER

2. BASE 3. EMITTER 4. COLLECTOR

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 0.370 0.385 9.40 9.78B 0.320 0.330 8.13 8.38C 0.670 0.790 17.02 20.07D 0.215 0.235 5.46 5.97E 0.070 ––– 1.78 –––J 0.003 0.007 0.08 0.18K 0.490 ––– 12.45 –––L 0.055 0.070 1.40 1.78M 45 NOM 45 NOMP ––– 0.050 ––– 1.27R 0.299 0.307 7.59 7.80S 0.158 0.178 4.01 4.52T 0.083 0.100 2.11 2.54U 0.098 0.132 2.49 3.35

� �

SEATINGPLANE

S

J

U

KD

L

A

R

M

3

1

42B

E P

T

8–32UNC–2A

WRENCH FLAT

C

Page 6: MRF240

MRF2406

MOTOROLA RF DEVICE DATA

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in differentapplications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola doesnot convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure ofthe Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any suchunintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmlessagainst all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:USA / EUROPE: Motorola Literature Distribution; JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: [email protected] – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MRF240/D

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Page 7: MRF240

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