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MRAM Roadmap Proposal v.1.0 MRAM Roadmap Proposal v.1.0
2001. 4. 232001. 4. 23
We propose two categories of FAST MRAM and HIGH DENSITY MRAM.
· The 1st FAST MRAM introduction of 256Mb should be pulled in 2003, while the 256Mb DRAM is near the end of life by its cost model. (chip size </= 60mm2) · The 1st HIGH DENSITY MRAM introduction of 512Mb may be in 2003.
▶ Density
· FAST MRAM : 4x density, 2-year cycle to 2007, then may follow DRAM density after 2007. · HIGH DENSITY MRAM : Going on 4x density, 2-year cycle (or, 8x density 3-year cycle) with multiple stacking layers ▶ Feature size (half pitch)
· FAST MRAM : 2-year cycle to 2008, 3-year cycle after 2008, Following DRAM after 2008 · HIGH DENSITY MRAM : 2-year cycle through 2014
We propose two categories of FAST MRAM and HIGH DENSITY MRAM.
· The 1st FAST MRAM introduction of 256Mb should be pulled in 2003, while the 256Mb DRAM is near the end of life by its cost model. (chip size </= 60mm2) · The 1st HIGH DENSITY MRAM introduction of 512Mb may be in 2003.
▶ Density
· FAST MRAM : 4x density, 2-year cycle to 2007, then may follow DRAM density after 2007. · HIGH DENSITY MRAM : Going on 4x density, 2-year cycle (or, 8x density 3-year cycle) with multiple stacking layers ▶ Feature size (half pitch)
· FAST MRAM : 2-year cycle to 2008, 3-year cycle after 2008, Following DRAM after 2008 · HIGH DENSITY MRAM : 2-year cycle through 2014
MRAM Roadmap Proposal v.1.0MRAM Roadmap Proposal v.1.0
MRAM Roadmap
MRAM Roadmap
64G
16G
1G
4G
256M
2000
Den
sit
y(G
en
era
tion
at
Pro
du
cti
on
)
Year of Production
8G
512M
2G
32G
2002 2004 20142012201020082006
High Density MRAM
Fast MRAM
DRAM
128G
128M
64M
Fast MRAM High Density MRAM DRAM
1999
IBM-Infineonpress release
MRAM Roadmap
MRAM Roadmap
Fast MRAM High Density MRAM DRAM
500
250
70
130
30
2000
Featu
re S
ize (
nm
)
Year of Production
180
50
100
350
2002 2004 2014201220102008200615
Tech
nolo
gy N
od
e -
DR
AM
Half
Pit
ch
(n
m)
500
250
70
130
30
180
50
100
350
15
Fast MRAM 2-Year Node Cycle
Saturated to DRAM3-Year Node Cycle
DRAM3-Year Node Cycle
IBM-Infineonpress release
High Density MRAM2-Year Node Cycle
Year of Production
10
0.1
Cell A
rea (
um
2)
1
2000 2002 2004 20142012201020082006
0.01
MRAM Roadmap
MRAM Roadmap
Fast MRAM High Density MRAM DRAM
Fast MRAM
DRAM
High density MRAM4F2
4F2
6F2
4F2
8F2
8F2
6F2
4F2
MRAM & DRAM Generations
Year of Production Technology
1/2 Pitch(nm)
1/2 Pitch(nm)
Cell Area Factor
Cell Area(um2)
Cell Area(um2)
1/2 Pitch(nm)
Cell Area Factor
Cell Area Factor
Cell Area(um2)
Fast MRAM
High Density MRAM
DRAM
Density(Generation at Production)
Density
Density
2001
-
130
-
0.14
-
-
8
-
-
512M
-
-
2002
180
115
8
0.10
0.25
250
8
4
0.26
-
128M
256M
2003
150
100
8
0.08
0.19
220
8
4
0.18
1G
256M
512M
2004
130
90
8
0.065
0.13
180
8
4
0.14
-
512M
1G
2005
110
80
8
0.038
0.09
150
6
4
0.10
2G
1G
2G
2008
60
60
6
0.022
0.032
90
6
4
0.022
6G
6G
16G
2011
40
40
4
0.0064
0.012
55*
4
4
0.0064
16G
16G
128G
2014
30
30
4
0.0036
0.004
32*
4
4
0.0036
48G
48G
2048G**
2006
90
70
8
0.029
0.068
130
6
4
0.065
-
2G
4G
2000
-
150
-
0.18
-
-
8
-
-
-
-
-
1999
-
180
-
0.26
-
-
8
-
-
256M
-
-
2007
75
65
6
0.025
0.048
110
6
4
0.034
4G
4G
8G
2009
50
50
6
0.015
0.026
80
6
4
0.015
8G
8G
32G
*65nm in 2010*45nm in 2012
**1024 G in 2013