12
To learn more about onsemi™, please visit our website at www.onsemi.com ON Semiconductor Is Now onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi ” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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Page 1: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

To learn more about onsemi™, please visit our website at www.onsemi.com

ON Semiconductor

Is Now

onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

Page 2: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

PNP RF TransistorThis device is designed for general RF amplifier and mixerapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range. Sourced from Process 75.

MMBTH81MPSH81

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 20 V

VCBO Collector-Base Voltage 20 V

VEBO Emitter-Base Voltage 3.0 V

IC Collector Current - Continuous 50 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max UnitsMPSH81 *MMBTH81

PD Total Device DissipationDerate above 25°C

3502.8

2251.8

mWmW/°C

RθJC Thermal Resistance, Junction to Case 125 °C/W

RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W

CE B

TO-92

C

B

E

SOT-23Mark: 3D

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

MP

SH

81 / MM

BT

H81

© 1997 Semiconductor Components Industries, LLC.October-2017, Rev. 2

Publication Order Number:MPSH81/D

Page 3: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

Electrical Characteristics TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

ON CHARACTERISTICS

V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 20 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 20 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V

ICBO Collector Cutoff Current VCB = 10 V, IE = 0 100 nA

IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA

hFE DC Current Gain IC = 5.0 mA, VCE = 10 V 60

VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0 mA, IB = 0.5 mA 0.5 V

VBE(on) Base-Emitter On Voltage IC = 5.0 mA, VCE = 10 V 0.9 V

SMALL SIGNAL CHARACTERISTICSfT Current Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V,

f = 100 MHz600 MHz

Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.85 pF

Cce Collector Emitter Capcitance VCB = 10 V, IB = 0, f = 1.0 MHz 0.65 pF

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Typical Characteristics

Symbol Parameter Test Conditions Min Max Units

PNP RF Transistor(continued)

MP

SH

81 / MM

BT

H81

PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)

Spice Model

DC Current Gain vsCollector Current

0.1 1 10 1000

20

40

60

80

100

120

140

160

180

200

I - COLLECTOR CURRENT (mA)

h

- D

C C

UR

RE

NT

GA

IN

C

FE

V = 1.0VCE

----

T = 125°CA

T = 25°CA

T = 55°CA -

Collector Saturation Voltagevs Collector Current

0.1 1 10 1000.01

0.02

0.05

0.1

0.2

0.5

1

I - COLLECTOR CURRENT (mA)

V

- C

OL

LE

CT

OR

SA

T. V

OLT

AG

E (V

)

C

----

-

-

-

-

-

-

T = 55°CA -

T = 25°CA T = 125°CA

I = 10 IC B

-

CE

(SA

T)

www.onsemi.com2

Page 4: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

MP

SH

81 / MM

BT

H81

Typical Characteristics (continued)

PNP RF Transistor(continued)

Input / Output Capacitancevs Reverse Bias Voltage

-10-8-6-4-201

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

REVERSE BIAS VOLTAGE (V)

CA

PA

CIT

AN

CE

(pF

)

C ibo

f = 1.0 MHz

C obo

Contours of Constant GainBandwidth Product (f )

0.1 1 10 100

-14

-12

-10

-8

-6

-4

-2

0

I - COLLECTOR CURRENT (mA)

V

- C

OL

LE

CTO

R V

OLT

AG

E (

V)

CE

C

----

T

200 MHz 500 MHz 900 MHz

200 MHz 500 MHz

1200 MHz

1500 MHz

Power Dissipation vsAmbient Temperature

0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

AT

ION

(m

W)

D

SOT-23

TO-92

°

Base-Emitter ON Voltagevs Collector Current

0.1 1 10 1000

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)V

- B

AS

E-E

MIT

TE

R O

N V

OLT

AG

E (

V)

BE

(ON

)

C

V = 10VCE

----

AT = 25°CA

T = 100°CA

Base-Emitter SaturationVoltage vs Collector Current

0.1 1 10 100

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-0.4

I - COLLECTOR CURRENT (mA)V

-

BA

SE

-EM

ITT

ER

SA

T. V

OLT

AG

E (

V)

BE

(SAT

)

C

----

T = 55°CA -

T = 25°CA

T = 125°CA

I = 10 IC B

Collector Reverse Currentvs Ambient Temperature

25 50 75 100 125 1500.01

0.1

1

10

100

T - AMBIENT TEMPERATURE ( C)I

- C

OL

LE

CTO

R R

EV

ER

SE

CU

RR

EN

T (

nA)

CE

S

A

V = -6.0VCE

V = -3.0VCE

°

www.onsemi.com3

Page 5: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

TO-92 Tape and Reel Data

TO-92 PackagingConfiguration: Figure 1.0

AMMO PACK OPTIONSee Fig 3.0 for 2 Ammo

Pack Options

2000 units perEO70 box for

std option

FSCINT Label

530mm x 130mm x 83mmIntermediate box

10,000 units maximumper intermediate box

for std option

FSCINT Label

114mm x 102mm x 51mmImmediate Box

Anti-static Bubble Sheets

(TO-92) BULK PACKING INFORMATION

EOLCODE DESCRIPTION LEADCLIP

DIMENSION QUANTITY

J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX

J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX

NO EOLCODE

TO-92 STANDARDSTRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX

BULK OPTIONSee Bulk PackingInformation table

375mm x 267mm x 375mmIntermediate Box

FSCINTLabel

CustomizedLabel

333mm x 231mm x 183mmIntermediate Box

FSCINTLabel

CustomizedLabel

TO-92 TNR/AMMO PACKING INFROMATION

Packing Style Quantity EOL code

Reel A 2,000 D26Z

E 2,000 D27Z

Ammo M 2,000 D74Z

P 2,000 D75Z

Unit weight = 0.22 gmReel weight with components = 1.04 kgAmmo weight with components = 1.02 kgMax quantity per intermediate box = 10,000 units

F63TNRLabel

5 Ammo boxes per Intermediate Box

CustomizedLabel

327mm x 158mm x 135mmImmediate Box

NSID: PN2222N

D/C1: D9842 SPEC REV: B2

SPEC:

QTY: 10000

QA REV:

ON SEMICONDUCTOR CORPORATION LOT:

CBVK741B019HTB:B

(FSCINT)

F63TNRLabel

CustomizedLabel

5 Reels perIntermediate Box

TAPE and REEL OPTIONSee Fig 2.0 for various

Reeling Styles

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV:

SPEC:

QTY: 2000

D/C2: QTY2: CPN:N/F: F (F63TNR)3

F63TNR Label sample

FSCINT Label sample

C

5 EO70 boxes per intermediate Box

ustomizedLabel

94 (NON PROELECTRON

SERIES), 96

L34Z TO-92 STANDARDSTRAIGHT FOR: PKG 94 NO LEADCLIP 2.0 K / BOX

(PROELECTRON SERIES

BCXXX, BFXXX, BSRXXX),97, 98

www.onsemi.com4

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Line
Page 6: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

TO-92 Tape and Reel Data, continued

TO-92 Reeling StyleConfiguration: Figure 2.0

Style “A”, D26Z, D70Z (s/h)

Machine Option “A” (H)

Style “E”, D27Z, D71Z (s/h)

Machine Option “E” (J)

FIRST WIRE OFF IS EMITTERADHESIVE TAPE IS ON THE TOP SIDEFLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLED75Z (P)

FIRST WIRE OFF IS COLLECTORADHESIVE TAPE IS ON THE TOP SIDEFLAT OF TRANSISTOR IS ON TOP

ORDER STYLED74Z (M)

TO-92 Radial Ammo PackagingConfiguration: Figure 3.0

FIRST WIRE OFF IS EMITTER (ON PKG. 92)ADHESIVE TAPE IS ON BOTTOM SIDEFLAT OF TRANSISTOR IS ON BOTTOM

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)ADHESIVE TAPE IS ON BOTTOM SIDEFLAT OF TRANSISTOR IS ON TOP

www.onsemi.com5

Page 7: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

ITEM DESCRIPTION

Base of Package to Lead Bend

Component Height

Lead Clinch Height

Component Base Height

Component Alignment ( side/side )

Component Alignment ( front/back )

Component Pitch

Feed Hole Pitch

Hole Center to First Lead

Hole Center to Component Center

Lead Spread

Lead Thickness

Cut Lead Length

Taped Lead Length

Taped Lead Thickness

Carrier Tape Thickness

Carrier Tape Width

Hold - down Tape Width

Hold - down Tape position

Feed Hole Position

Sprocket Hole Diameter

Lead Spring Out

SYMBOL

b

Ha

HO

H1

Pd

Hd

P

PO

P1

P2

F1/F2

d

L

L1

t

t1

W

WO

W1

W2

DO

S

DIMENSION

0.098 (max)

0.928 (+/- 0.025)

0.630 (+/- 0.020)

0.748 (+/- 0.020)

0.040 (max)

0.031 (max)

0.500 (+/- 0.020)

0.500 (+/- 0.008)

0.150 (+0.009, -0.010)

0.247 (+/- 0.007)

0.104 (+/- 0 .010)

0.018 (+0.002, -0.003)

0.429 (max)

0.209 (+0.051, -0.052)

0.032 (+/- 0.006)

0.021 (+/- 0.006)

0.708 (+0.020, -0.019)

0.236 (+/- 0.012)

0.035 (max)

0.360 (+/- 0.025)

0.157 (+0.008, -0.007)

0.004 (max)

Note : All dimensions are in inches.

ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM

Reel Diameter D1 13.975 14.025

Arbor Hole Diameter (Standard) D2 1.160 1.200

(Small Hole) D2 0.650 0.700

Core Diameter D3 3.100 3.300

Hub Recess Inner Diameter D4 2.700 3.100

Hub Recess Depth W1 0.370 0.570

Flange to Flange Inner Width W2 1.630 1.690

Hub to Hub Center Width W3 2.090

Note: All dimensions are inches

TO-92 Tape and Reel TapingDimension Configuration: Figure 4.0

Ha

H1 HO

PO

P2

P1 F1

DO

P Pd

b

d

L1

LS

WOW2

W

t

t1

Hd

W1

TO-92 ReelConfiguration: Figure 5.0

User Direction of Feed

SEN SITIVE D EVICES

ELECTROSTATIC

D1

D3

Customized Label

W2

W1

W3

F63TNR Label

D4

D2

TO-92 Tape and Reel Data, continued

www.onsemi.com6

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Rectangle
Page 8: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

TO-92 (FS PKG Code 92, 94, 96)

TO-92 Package Dimensions

1:1Scale 1:1 on letter size paper

Dimensions shown below are in:inches [millimeters]

Part Weight per unit (gram): 0.1977

www.onsemi.com7

Page 9: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

SOT-23 PackagingConfiguration: Figure 1.0

ComponentsLeader Tape500mm minimum or

125 empty pockets

Trailer Tape300mm minimum or

75 empty pockets

SOT-23 Tape Leader and TrailerConfiguration: Figure 2.0

Cover Tape

Carrier Tape

Note/Comments

Packaging Option

SOT-23 Packaging Information

Standard(no flow code) D87Z

Packaging type

Reel Size

TNR

7" Dia

TNR

13"

Qty per Reel/Tube/Bag 3,000 10,000

Box Dimension (mm) 187x107x183 343x343x64

Max qty per Box 24,000 30,000

Weight per unit (gm) 0.0082 0.0082

Weight per Reel (kg) 0.1175 0.4006

Human readableLabel

Human Readable Label

Human Readable Label sample

343mm x 342mm x 64mmIntermediate box for L87Z Option

187mm x 107mm x 183mmIntermediate Box for Standard Option

SOT-23 Unit Orientation

3P 3P 3P 3P

Human ReadableLabel

Customized Label

EmbossedCarrier Tape

Antistatic Cover Tape

Packaging Description:

SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (anti-static coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table.

These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a ON Semiconductor logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped.

SOT-23 Tape and Reel Data

www.onsemi.com8

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Page 10: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

Dimensions are in millimeter

Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SOT-23(8mm)

3.15+/-0.10

2.77+/-0.10

8.0+/-0.3

1.55+/-0.05

1.125+/-0.125

1.75+/-0.10

6.25min

3.50+/-0.05

4.0+/-0.1

4.0+/-0.1

1.30+/-0.10

0.228+/-0.013

5.2+/-0.3

0.06+/-0.02

Dimensions are in inches and millimeters

Tape SizeReel

Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

8mm 7" Dia 7.00177.8

0.0591.5

512 +0.020/-0.00813 +0.5/-0.2

0.79520.2

2.16555

0.331 +0.059/-0.0008.4 +1.5/0

0.56714.4

0.311 – 0.4297.9 – 10.9

8mm 13" Dia 13.00330

0.0591.5

512 +0.020/-0.00813 +0.5/-0.2

0.79520.2

4.00100

0.331 +0.059/-0.0008.4 +1.5/0

0.56714.4

0.311 – 0.4297.9 – 10.9

See detail AA

Dim Amax

13" Diameter Option

7" Diameter Option

Dim AMax

See detail AA

W3

W2 max Measured at Hub

W1 Measured at Hub

Dim N

Dim Dmin

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

0.5mmmaximum

0.5mmmaximum

Sketch C (Top View)Component lateral movement

Typicalcomponentcavitycenter line

20 deg maximum

Typicalcomponentcenter line

B0

A0

Sketch B (Top View)Component Rotation

Sketch A (Side or Front Sectional View)Component Rotation

User Direction of Feed

SOT-23 Embossed Carrier TapeConfiguration: Figure 3.0

SOT-23 Reel Configuration: Figure 4.0

P1 A0

D1

F W

E1

E2

Tc

Wc

K0

T

B0

D0P0 P2

SOT-23 Tape and Reel Data, continued

www.onsemi.com9

Page 11: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

SOT-23 (FS PKG Code 49)

SOT-23 Package Dimensions

1:1Scale 1:1 on letter size paper

Dimensions shown below are in:inches [millimeters]

Part Weight per unit (gram): 0.0082

www.onsemi.com10

Page 12: MPSH81 / MMBTH81 PNP RF Transistor · PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800−282−9855 Toll FreeUSA/Canada

Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910

Japan Customer Focus CenterPhone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:Literature Distribution Center for ON Semiconductor19521 E. 32nd Pkwy, Aurora, Colorado 80011 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: [email protected]

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Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your localSales Representative

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