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1

IPA083N10N5

Rev.2.1,2016-10-03Final Data Sheet

TO-220-FP

DrainPin 2

GatePin 1

SourcePin 3

MOSFETOptiMOSª5Power-Transistor,100V

Features•Idealforhighfrequencyswitchingandsync.rec.•ExcellentgatechargexRDS(on)product(FOM)•Verylowon-resistanceRDS(on)•N-channel,normallevel•100%avalanchetested•Pb-freeplating;RoHScompliant•QualifiedaccordingtoJEDEC1)fortargetapplications•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 100 V

RDS(on),max 8.3 mΩ

ID 44 A

Qoss 40 nC

QG(0V..10V) 30 nC

Type/OrderingCode Package Marking RelatedLinksIPA083N10N5 PG-TO220-FP 083N10N5 -

1) J-STD20 and JESD22

2

OptiMOSª5Power-Transistor,100VIPA083N10N5


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

3



1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID --

--

4432 A TC=25°C

TC=100°C

Pulsed drain current1) ID,pulse - - 176 A TC=25°C

Avalanche energy, single pulse EAS - - 83 mJ ID=44A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot - - 36 W TC=25°C

Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;DIN IEC 68-1: 55/175/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - 3.1 4.1 K/W -

3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=49µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=100V,VGS=0V,Tj=25°C

VDS=100V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

7.28.8

8.311.0 mΩ VGS=10V,ID=44A

VGS=6V,ID=22A

Gate resistance2) RG - 1.2 1.8 Ω -

Transconductance gfs 38 76 - S |VDS|>2|ID|RDS(on)max,ID=44A

1) see Diagram 32) Defined by design. Not subject to production test.

4



Table5Dynamiccharacteristics1)Values


Input capacitance Ciss - 2100 2730 pF VGS=0V,VDS=50V,f=1MHz

Output capacitance Coss - 337 438 pF VGS=0V,VDS=50V,f=1MHz

Reverse transfer capacitance Crss - 16 28 pF VGS=0V,VDS=50V,f=1MHz

Turn-on delay time td(on) - 15 - ns VDD=50V,VGS=10V,ID=44A,RG,ext=1.6Ω

Rise time tr - 5 - ns VDD=50V,VGS=10V,ID=44A,RG,ext=1.6Ω

Turn-off delay time td(off) - 24 - ns VDD=50V,VGS=10V,ID=44A,RG,ext=1.6Ω

Fall time tf - 5 - ns VDD=50V,VGS=10V,ID=44A,RG,ext=1.6Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 10 - nC VDD=50V,ID=44A,VGS=0to10V

Gate to drain charge1) Qgd - 6 10 nC VDD=50V,ID=44A,VGS=0to10V

Switching charge Qsw - 10 - nC VDD=50V,ID=44A,VGS=0to10V

Gate charge total1) Qg - 30 37 nC VDD=50V,ID=44A,VGS=0to10V

Gate plateau voltage Vplateau - 4.8 - V VDD=50V,ID=44A,VGS=0to10V

Output charge1) Qoss - 40 53 nC VDD=50V,VGS=0V

Table7ReversediodeValues


Diode continous forward current IS - - 30 A TC=25°C

Diode pulse current IS,pulse - - 176 A TC=25°C

Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=44A,Tj=25°C

Reverse recovery time1) trr - 55 110 ns VR=50V,IF=IS,diF/dt=100A/µs

Reverse recovery charge1) Qrr - 95 190 nC VR=50V,IF=IS,diF/dt=100A/µs

1) Defined by design. Not subject to production test.2) See ″Gate charge waveforms″ for parameter definition

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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 50 100 150 2000

10

20

30

40

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 50 100 150 2000

10

20

30

40

50

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 102 10310-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 10010-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

6



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 1 2 3 4 50

20

40

60

80

100

120

140

160

180

8 V10 V6 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 20 40 60 80 100 120 140 160 1800

5

10

15

20

4.5 V

5 V

6 V

8 V10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 80

20

40

60

80

100

120

140

160

180

175 °C 25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 60 80 1000

20

40

60

80

100

120

gfs=f(ID);Tj=25°C

7



Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800

2

4

6

8

10

12

14

16

18

max

typ

RDS(on)=f(Tj);ID=44A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

490 µA

49 µA

VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60 80101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

25 °C175 °C25 °C, max175 °C, max

IF=f(VSD);parameter:Tj

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Diagram13:Avalanchecharacteristics

tAV[µs]

IAS [A]

100 101 102 103100

101

102

25 °C

100 °C

150 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 300

2

4

6

8

10

80 V

50 V

20 V

VGS=f(Qgate);ID=44Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18090

95

100

105

110

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

9



5PackageOutlines

Figure1OutlinePG-TO220-FP,dimensionsinmm/inches

10



RevisionHistoryIPA083N10N5

Revision:2016-10-03,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2014-12-18 Release of final version

2.1 2016-10-03 Update Avalanche Energy

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