Upload
others
View
2
Download
0
Embed Size (px)
Citation preview
MOSFETMetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6600VCoolMOS™P6PowerTransistorIPx60R099P6
DataSheetRev.2.1Final
PowerManagement&Multimarket
2
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
TO-247tab
TO-220 TO-220FP
DrainPin 2, Tab
GatePin 1
SourcePin 3
1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighterandcooler.
Features•IncreasedMOSFETdv/dtruggedness•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Veryhighcommutationruggedness•Easytouse/drive•Pb-freeplating,Halogenfreemoldcompound•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V
RDS(on),max 99 mΩ
Qg.typ 70 nC
ID,pulse 109 A
Eoss@400V 8.8 µJ
Body diode di/dt 300 A/µs
Type/OrderingCode Package Marking RelatedLinksIPW60R099P6 PG-TO 247
IPP60R099P6 PG-TO 220
IPA60R099P6 PG-TO 220 FullPAK
6R099P6 see Appendix A
3
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
2MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
37.924.0 A TC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 109 A TC=25°C
Avalanche energy, single pulse EAS - - 796 mJ ID=6.6A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 1.21 mJ ID=6.6A; VDD=50V; see table 10
Avalanche current, repetitive IAR - - 6.6 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation (Non FullPAK) TO-220, TO-247 Ptot - - 278 W TC=25°C
Power dissipation (FullPAK) TO-220FP Ptot - - 34 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque (Non FullPAK) TO-220, TO-247 - - - 60 Ncm M3 and M3.5 screws
Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws
Continuous diode forward current IS - - 32.9 A TC=25°C
Diode pulse current2) IS,pulse - - 109 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°Csee table 8
Maximum diode commutation speed dif/dt - - 300 A/µs VDS=0...400V,ISD<=IS,Tj=25°Csee table 8
Insulation withstand voltage forTO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min
1) Limited by Tj max. Maximum duty cycle D=0.752) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG
5
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
3Thermalcharacteristics
Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.45 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
Table4Thermalcharacteristics(FullPAK)TO-220FPValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 3.65 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
6
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table5StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=1.21mA
Zero gate voltage drain current IDSS --
-10
5- µA VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.0890.232
0.099- Ω VGS=10V,ID=14.5A,Tj=25°C
VGS=10V,ID=14.5A,Tj=150°C
Gate resistance RG - 1 - Ω f=1MHz,opendrain
Table6DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 3330 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 140 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energyrelated1) Co(er) - 110 - pF VGS=0V,VDS=0...400V
Effective output capacitance, timerelated2) Co(tr) - 495 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 20 - ns VDD=400V,VGS=13V,ID=18.1A,RG=1.7Ω;seetable9
Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=18.1A,RG=1.7Ω;seetable9
Turn-off delay time td(off) - 50 - ns VDD=400V,VGS=13V,ID=18.1A,RG=1.7Ω;seetable9
Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=18.1A,RG=1.7Ω;seetable9
Table7GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 20 - nC VDD=400V,ID=18.1A,VGS=0to10V
Gate to drain charge Qgd - 24 - nC VDD=400V,ID=18.1A,VGS=0to10V
Gate charge total Qg - 70 - nC VDD=400V,ID=18.1A,VGS=0to10V
Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=18.1A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
7
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
Table8ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=18.1A,Tj=25°C
Reverse recovery time trr - 470 - ns VR=400V,IF=18.1A,diF/dt=100A/µs;see table 8
Reverse recovery charge Qrr - 9 - µC VR=400V,IF=18.1A,diF/dt=100A/µs;see table 8
Peak reverse recovery current Irrm - 37 - A VR=400V,IF=18.1A,diF/dt=100A/µs;see table 8
8
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
50
100
150
200
250
300
Ptot=f(TC)
Diagram2:Powerdissipation(FullPAK)
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
5
10
15
20
25
30
35
40
Ptot=f(TC)
Diagram3:Max.transientthermalimpedance(NonFullPAK)
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-110-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
Diagram4:Max.transientthermalimpedance(FullPAK)
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-1 100 10110-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
9
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
Diagram5:Safeoperatingarea(NonFullPAK)
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram6:Safeoperatingarea(FullPAK)
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram7:Safeoperatingarea(NonFullPAK)
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
1021 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram8:Safeoperatingarea(FullPAK)
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
1021 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
10
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
Diagram9:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
10
20
30
40
50
60
70
80
90
100
110
120
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram10:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
20
25
30
35
40
45
50
55
60
65
7020 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram11:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 800.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
20 V
5.5 V 6 V 6.5 V 7 V10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram12:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-50 -25 0 25 50 75 100 125 1500.05
0.10
0.15
0.20
0.25
0.30
98%typ
RDS(on)=f(Tj);ID=14.5A;VGS=10V
11
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
Diagram13:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 12 140
20
40
60
80
100
120
25 °C
150 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram14:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 40 50 60 70 800
1
2
3
4
5
6
7
8
9
10
120 V 480 V
VGS=f(Qgate);ID=18.1Apulsed;parameter:VDD
Diagram15:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.010-1
100
101
102
25 °C125 °C
IF=f(VSD);parameter:Tj
Diagram16:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
100
200
300
400
500
600
700
800
EAS=f(Tj);ID=6.6A;VDD=50V
12
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
Diagram17:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-75 -50 -25 0 25 50 75 100 125 150 175520
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=1mA
Diagram18:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 500100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 5000
1
2
3
4
5
6
7
8
9
10
Eoss=f(VDS)
13
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
6TestCircuits
Table9DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trrtF tS
QF QS
dIF / dt
dIrr / dt
VDS(peak)
Qrr = QF +QS
trr =tF +tS
VDS
IF
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table10SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table11UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
14
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
7PackageOutlines
Figure1OutlinePG-TO247,dimensionsinmm/inches
15
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
Figure2OutlinePG-TO220,dimensionsinmm/inches
16
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
A2
H
b
D
c
b2
E
e1
e
L
Q
øP
L1
N
D1
A
DIM
A1
DOCUMENT NO.
Z8B00003319
2.5
REVISION
04
05-05-2014
ISSUE DATE
EUROPEAN PROJECTION
1.130
0.177
MIN
0.095
0.026
0.016
0.617
0.037
0.092
0.394
0.503
0.116
0.124
0.111
0.353
2.862.42
2.54 (BSC)
5.08
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
2.95
12.78
8.97
3
29.75
0.90
0.63
1.51
16.15
3.50
3.38
3.45
13.75
10.65
9.83
MILLIMETERS
MIN
4.50
2.34
MAX
4.90
2.85
0.113
0.100 (BSC)
0.200
3
1.171
0.059
0.636
0.025
0.035
0.419
0.136
0.133
0.138
0.541
0.387
0
INCHES
0.193
MAX
0.112
SCALE
5mm
0
2.5
b1 0.0370.95 1.38 0.054
b4 0.0260.65 1.51 0.059
b3 0.0260.65 1.38 0.054
Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches
17
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
8AppendixA
Table12RelatedLinks
• IFXCoolMOSTMP6Webpage:www.infineon.com
• IFXCoolMOSTMP6applicationnote:www.infineon.com
• IFXCoolMOSTMP6simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Rev.2.1,2015-05-18Final Data Sheet
RevisionHistoryIPW60R099P6, IPP60R099P6, IPA60R099P6
Revision:2015-05-18,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-03-07 Release of final version
2.1 2015-05-18 Rdson max change from 105 to 99mOhm
WeListentoYourCommentsAnyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]
PublishedbyInfineonTechnologiesAG81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.
LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).
WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.