© Semiconductor Components Industries, LLC, 2018

March, 2021 − Rev. 41 Publication Order Number:

NTMFD001N03P9/D

MOSFET – Power, Dual,N-Channel, Power Clip,Trench, Asymmetric30�V

NTMFD001N03P9

Features• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Typical Applications• DC−DC Converters

• System Voltage Rails

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PIN1

Bottom

PQFN8POWER CLIPCASE 483AR

See detailed ordering and shipping information on page 10 ofthis data sheet.

ORDERING INFORMATION

ELECTRICAL CONNECTION

$Y = ON Semiconductor Logo&Z = Assembly Plant Code&3 = Numeric Date Code&K = Lot Code39HN = Specific Device Code

$Y&Z&3&K39HN

MARKING DIAGRAM

FET V(BR)DSS RDS(ON) MAX ID MAX

30 VQ1 57 A

30 VQ2 165 A

5.0 m� @ 10 V

6.5 m� @ 4.5 V

1.0 m� @ 10 V

1.2 m� @ 4.5 V

9

10

HSG

GR

V+

V+

NTMFD001N03P9

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Table 1. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Q1 Q2 Unit

Drain−to−Source Voltage VDSS 30 30 V

Gate−to−Source Voltage VGS ±20 +16 V −12 V V

Continuous Drain Current R�JC (Note 3) Steady State TC = 25°C ID 57 165 A

TC = 85°C 41 119

Power Dissipation R�JC (Note 3) TC = 25°C PD 25 41 W

Continuous Drain Current R�JA (Note 1, 3) Steady State TA = 25°C ID 16 38 A

TA = 85°C 12 27

Power Dissipation R�JA (Note 1, 3) TA = 25°C PD 2.1 2.3 W

Continuous Drain Current R�JA (Note 2, 3) Steady State TA = 25°C ID 11 25 A

TA = 85°C 8 18

Power Dissipation R�JA (Note 2, 3) TA = 25°C PD 0.96 1.04 W

Pulsed Drain Current TA = 25°C, tp = 10 �s IDM 300 500 A

Single Pulse Drain−to−Source Avalanche EnergyQ1: IL = 5.3 Apk, L = 3 mH (Note 4)Q2: IL = 8.35 Apk, L = 3 mH (Note 4)

EAS 42 104 mJ

Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C

Lead Temperature Soldering Reflow for Soldering Purposes(1/8″ from case for 10 s)

TL 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.

Table 2. THERMAL RESISTANCE RATINGS

Parameter Symbol Q1 Max Q2 Max Units

Junction−to−Case – Steady State (Note 1, 3) R�JC 5.0 3.0 °C/W

Junction−to−Ambient – Steady State (Note 1, 3) R�JA 60 55

Junction−to−Ambient – Steady State (Note 2, 3) R�JA 130 120

1. Surface−mounted on FR4 board using 1 in2 pad size, 2 oz Cu pad.2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.3. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular

conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. R�CA is determinedby the user’s board design.

4. Q1 100% UIS tested at L = 0.1 mH, IAS = 20 A.Q2 100% UIS tested at L = 0.1 mH, IAS = 47 A.

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Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter Symbol Test Condition FET Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 �A Q1 30 V

VGS = 0 V, ID = 1 mA Q2 30

Drain−to−Source Breakdown VoltageTemperature Coefficient

V(BR)DSS /TJ

ID = 250 �A, ref to 25°C Q1 15 mV/°C

ID = 50 mA, ref to 25°C Q2 16

Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25°C

Q1 1 �A

Q2 500

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V Q1 100 nA

VDS = 0 V, VGS = 16 V Q2 100

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 �A Q1 1.0 3.0 V

VGS = VDS, ID = 1 mA Q2 1.0 3.0

Threshold Temperature Coefficient VGS(TH)/ TJ

ID = 250 �A, ref to 25°C Q1 −5 mV/°C

ID = 50 mA, ref to 25°C Q2 −3

Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 17 A Q1 4.5 5.0 m�

VGS = 4.5 V, ID = 14 A 5.4 6.5

VGS = 10 V, ID = 40 A Q2 0.75 1.0

VGS = 4.5 V, ID = 37 A 0.9 1.2

Forward Transconductance gFS VDS = 5 V, ID = 14 A Q1 93 S

VDS = 5 V, ID = 37 A Q2 248

Gate Resistance RGTA = 25°C

Q1 1 �

Q2 1

CHARGES & CAPACITANCES

Input Capacitance CISS

VGS = 0 V, VDS = 15 V,f = 1 MHz

Q1 1224 pF

Q2 6575

Output Capacitance COSS Q1 397 pF

Q2 2086

Reverse Capacitance CRSS Q1 42 pF

Q2 138

Total Gate Charge QG(TOT)

Q1: VGS = 4.5 V, VDS = 15 V, ID = 14 A

Q2: VGS = 4.5 V, VDS = 15 V, ID = 37 A

Q1 7.9 nC

Q2 43

Gate−to−Drain Charge QGD Q1 2.0 nC

Q2 9.5

Gate−to−Source Charge QGS Q1 3.1 nC

Q2 15.8

Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V, ID = 14 A Q1 17 nC

VGS = 10 V, VDS = 15 V, ID = 37 A Q2 93

5. Pulse Test: pulse width ≤ 300 �s, duty cycle ≤ 2%6. Switching characteristics are independent of operating junction temperatures

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Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter UnitMaxTypMinFETTest ConditionSymbol

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn−On Delay Time td(ON)

VGS = 4.5 VQ1: ID = 14 A, VDD = 15 V,

RG = 6 �Q2: ID = 37 A, VDD = 15 V,

RG = 6 �

Q1 36 ns

Q2 12.6

Rise Time tr(ON) Q1 30.7 ns

Q2 21.5

Turn−Off Delay Time td(OFF) Q1 64.7 ns

Q2 17.5

Fall Time tf Q1 23.5 ns

Q2 7.3

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)

Turn−On Delay Time td(ON)

VGS = 10 VQ1: ID = 17 A, VDD = 15 V,

RG = 6 �Q2: ID = 40 A, VDD = 15 V,

RG = 6 �

Q1 8.0 ns

Q2 8.6

Rise Time tr(ON) Q1 2.0 ns

Q2 18.2

Turn−Off Delay Time td(OFF) Q1 23.5 ns

Q2 4.5

Fall Time tf Q1 2.0 ns

Q2 4.5

SOURCE−TO−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,IS = 14 A

TJ = 25°C Q1 0.79 1.2 V

TJ = 125°C 0.66

VGS = 0 V,IS = 37 A

TJ = 25°C Q2 0.77 1.2

TJ = 125°C 0.63

Reverse Recovery Time tRR

VGS = 0 VQ1: IS = 14 A, dI/dt = 100 A/�sQ2: IS = 37 A, dI/dt = 240 A/�s

Q1 23 ns

Q2 4.6

Reverse Recovery Charge QRR Q1 8.0 nC

Q2 68.3

5. Pulse Test: pulse width ≤ 300 �s, duty cycle ≤ 2%6. Switching characteristics are independent of operating junction temperatures

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TYPICAL CHARACTERISTICS − Q1

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

0.500.250

20

60

2.01.51.00.500

20

60

Figure 3. On−Resistance vs. Gate−to−SourceVoltage

Figure 4. On−Resistance vs. Drain Current andGate Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

98760

2

6030152.0

Figure 5. On−Resistance Variation withTemperature

Figure 6. Drain−to−Source Leakage Currentvs. Voltage

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125 15075500−25−500

1.6

30252010

I D, D

RA

IN C

UR

RE

NT

(A

)

I D, D

RA

IN C

UR

RE

NT

(A

)

RD

S(o

n), D

RA

IN−

TO−

SO

UR

CE

RE

SIS

TAN

CE

(m�

)

RD

S(o

n), D

RA

IN−

TO−

SO

UR

CE

RE

SIS

TAN

CE

(m�

)

RD

S(o

n), N

OR

MA

LIZ

ED

DR

AIN−

TO−

SO

UR

CE

RE

SIS

TAN

CE

I DS

S, L

EA

KA

GE

CU

RR

EN

T (

nA)

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°CID = 17 A

VGS = 10 V

25 100

TJ = 85°C

2.00

10

5

2.5 3.5

VGS = 4.5 V to 10 V

14

3.0

TJ = 25°C

1E+06

0.8

40 40

4

16

1.00 1.50

10

50

30

10

50

30

405

4.0

5.5

7.0

8.0

3 5

6

8

12

0.2

0.4

0.6

1.0

1.2

1.4

10

TJ = 150°CTJ = 125°C

1E+02

1E+01

1E−01

1E−02

1E−03

2.5

3.5

5.0

6.0

7.5 TJ = 25°C

0

3.5 V

4

15

1E+03

1E+05

VGS = 4.5 V

VGS = 10 VID = 17 A

VDS = 10 V

10 20 25 35 45 50 55

3.00.75 1.25 1.75

3.0 V

2.5 V

4.5

6.5

1E+04

1E+00

NTMFD001N03P9

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TYPICAL CHARACTERISTICS − Q1

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. TotalCharge

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

10

8400

2

4

6

5

7

Figure 9. Resistive Switching Time Variationvs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (�) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)

110

100

0.90.8 1.00.60.4 0.50.30.1

Figure 11. Maximum Rated Forward BiasedSafe Operating Area

Figure 12. Maximum Drain Current vs. Time inAvalanche

VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (S)

1010.10.1

10

100

1000

C, C

AP

AC

ITA

NC

E (

pF)

VG

S, G

AT

E−T

O−

SO

UR

CE

VO

LTA

GE

(V

)

t, S

WIT

CH

ING

TIM

E (

ns)

−IS, S

OU

RC

E C

UR

RE

NT

(A

)

I D, D

RA

IN C

UR

RE

NT

(A)

I PE

AK, D

RA

IN C

UR

RE

NT

(A

)

VGS = 0 VTJ = 25°Cf = 1 MHz

CISS

COSS

CRSS

VDS = 15 VTJ = 25°CID = 14 A

QGS QGD

VGS = 4.5 VVDS = 15 VID = 14 A

td(off)

td(on)

tf

tr

TJ = 25°C TJ = −55°C

TJ(initial) = 125°C

TJ(initial) = 25°C

0.01 100

RDS(on) LimitThermal LimitPackage Limit

10 �s

1 ms10 ms

Single PulseR�JC = 5.0°C/WTC = 25°C

10K

100

30150 20

VGS = 0 V

0.1

100

1

1

1001

2 6

1K

9

10

1

10

TJ = 150°C

10

1

10

10 18

8

1

3

5 10 20 25

0.7

100.001

TJ(initial) = 100°C100 �s

12 14 16

QGTOT

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TYPICAL CHARACTERISTICS − Q1

Figure 13. Thermal Response

t, PULSE TIME (s)

100.10.00010.000001

0.1

R�JC

(t),

EF

FE

CT

IVE

TR

AN

SIE

NT

TH

ER

MA

L R

ES

ISTA

NC

E (

°C/W

)

10

10.010.00001 0.001

1

Single Pulse

Duty Cycle = 0.5

0.2

0.10.05

0.020.01

0.01

0.001

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TYPICAL CHARACTERISTICS − Q2

Figure 14. On−Region Characteristics Figure 15. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

0.40.20

20

60

100

2.01.51.00.500

20

60

100

Figure 16. On−Resistance vs. Gate−to−SourceVoltage

Figure 17. On−Resistance vs. Drain Currentand Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

98760

0.5

10030 500

Figure 18. On−Resistance Variation withTemperature

Figure 19. Drain−to−Source Leakage Currentvs. Voltage

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

12510075250−25−500

1.6

302520

I D, D

RA

IN C

UR

RE

NT

(A

)

I D, D

RA

IN C

UR

RE

NT

(A

)

RD

S(o

n), O

N−

RE

SIS

TAN

CE

(m�

)

RD

S(o

n), D

RA

IN−

TO−

SO

UR

CE

RE

SIS

TAN

CE

(m�

)

RD

S(o

n), N

OR

MA

LIZ

ED

DR

AIN−

TO−

SO

UR

CE

ON−

RE

SIS

TAN

CE

I DS

S, L

EA

KA

GE

CU

RR

EN

T (

nA)

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°CID = 37 A

VGS = 10 V

50 150

TJ = 85°C

1.0

3.0

5 10

2.5 3.0

VGS = 2.8 V to 10 V

4.5

0.25

TJ = 25°C

1E−01

0.8

40 40

1.0

5.0

0.6 0.8

10

50

70

30

10

50

70

30

70

0.75

1.50

2.00

2 5

2.0

2.5

4.0

0.2

0.4

0.6

1.0

1.2

1.4

10

TJ = 150°C

TJ = 125°C

1E−04

1E−05

1E−06

0.50

1.00

1.25

1.75 TJ = 25°C

0

2.5 V

4

15

1E−03

1E−02

VGS = 4.5 V

80

90

ID = 40 AVGS = 10 V

TJ = 125°CVDS = 10 V

80

90

10 20 40 60 80 903

1.5

3.5

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TYPICAL CHARACTERISTICS − Q2

Figure 20. Capacitance Variation Figure 21. Gate−to−Source Voltage vs. TotalCharge

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

100

503000

2

4

6

Figure 22. Resistive Switching Time Variationvs. Gate Resistance

Figure 23. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (�) VSD, BODY DIODE FORWARD VOLTAGE (V)

1011E−09

1E−07

1.00.8 1.20.60.40.200.001

Figure 24. Maximum Rated Forward BiasedSafe Operating Area

Figure 25. Maximum Drain Current vs. Time inAvalanche

VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s)

1010.10.1

10

100

1000

C, C

AP

AC

ITA

NC

E (

pF)

VG

S, G

AT

E−T

O−

SO

UR

CE

VO

LTA

GE

(V

)

t, S

WIT

CH

ING

TIM

E (

s)

I S, R

EV

ER

SE

DR

AIN

CU

RR

EN

T (

A)

I D, D

RA

IN C

UR

RE

NT

(A)

I PE

AK, D

RA

IN C

UR

RE

NT

(A

)

VGS = 0 VTJ = 25°Cf = 1 MHz

CISS

COSS

CRSS VDS = 15 VTJ = 25°CID = 37 A

QGS QGD

VGS = 4.5 VTJ = 25°CID = 37 A

td(off)td(on)

tf

trTJ = 25°C

TJ = −55°C

TJ(initial) = 125°C

TJ(initial) = 25°C

0.001 1000

RDS(on) LimitThermal LimitPackage Limit

10 �s

1 ms

10 ms

100K

100

30100 100

VGS = 0 V

1

1K

0.1

1E−08

1

1001

10 40

10K

10

10

10

1

100

TJ = 125°C

10

1070 80

8

5 15 20 25 20 60 90

QGTOT

0.01

1000.10.01

TJ(initial) = 100°C

100 �s

Single PulseR�JC = 3.0°C/WTC = 25°C

100 ms/DC

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TYPICAL CHARACTERISTICS − Q2

Figure 26. Transient Thermal Impedance

100.10.0001

0.1

10

10.010.000001 0.001

1

Single Pulse

Duty Cycle = 0.5

0.20.10.050.020.01

0.01

0.0001

t, PULSE TIME (s)

R�JC

(t),

EF

FE

CT

IVE

TR

AN

SIE

NT

TH

ER

MA

L R

ES

ISTA

NC

E (

°C/W

)

0.00001

0.001

ORDERING INFORMATION

Device Package Shipping

NTMFD001N03P9 DFN8(Pb−Free)

3000 / Tape & Reel

PQFN8 5x6, 1.27PCASE 483AR

ISSUE ADATE 21 MAY 2021

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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