IRF520NPbFHEXFET® Power MOSFET

PD - 94818

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.

The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout theindustry.

S

D

G

Parameter Max. UnitsID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.7ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 AIDM Pulsed Drain Current 38PD @TC = 25°C Power Dissipation 48 W

Linear Derating Factor 0.32 W/°CVGS Gate-to-Source Voltage ± 20 VEAS Single Pulse Avalanche Energy 91 mJIAR Avalanche Current 5.7 AEAR Repetitive Avalanche Energy 4.8 mJdv/dt Peak Diode Recovery dv/dt 5.0 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. UnitsRθJC Junction-to-Case ––– 3.1RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WRθJA Junction-to-Ambient ––– 62

Thermal Resistance

VDSS = 100V

RDS(on) = 0.20Ω

ID = 9.7A

TO-220AB

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Description

11/5/03

Lead-Free

IRF520NPbF

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode)––– –––

showing theISM Pulsed Source Current integral reverse

(Body Diode) ––– –––

p-n junction diode.VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V trr Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7AQrr Reverse RecoveryCharge ––– 390 580 nC di/dt = 100A/µs

Source-Drain Ratings and Characteristics

S

D

G

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mARDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 5.7A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µAgfs Forward Transconductance 2.7 ––– ––– S VDS = 50V, ID = 5.7A

––– ––– 25µA

VDS = 100V, VGS = 0V––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20VGate-to-Source Reverse Leakage ––– ––– -100

nAVGS = -20V

Qg Total Gate Charge ––– ––– 25 ID = 5.7AQgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80VQgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 4.5 ––– VDD = 50Vtr Rise Time ––– 23 ––– ID = 5.7Atd(off) Turn-Off Delay Time ––– 32 ––– RG = 22Ωtf Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10

Between lead,––– –––

6mm (0.25in.)from packageand center of die contact

Ciss Input Capacitance ––– 330 ––– VGS = 0VCoss Output Capacitance ––– 92 ––– pF VDS = 25VCrss Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5

nH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance ––– –––S

D

G

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

Notes:

VDD = 25V, starting TJ = 25°C, L = 4.7mH RG = 25Ω, IAS = 5.7A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

9.7

38

A

IRF520NPbF

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output Characteristics

1

10

100

0.1 1 10 100

I ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

D

V , Drain-to-Source Voltage (V)DS

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

20µs PULSE WIDTH T = 25°CC A

4.5V

1

10

100

0.1 1 10 100

4.5V

I ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

D

V , Drain-to-Source Voltage (V)DS

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

20µs PULSE WIDTH T = 175°CC

A

1

10

100

4 5 6 7 8 9 10

T = 25°CJ

GSV , Gate-to-Source Voltage (V)

DI ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

V = 50V 20µs PULSE WIDTH

DS

T = 175°CJ

A 0.0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

JT , Junction Temperature (°C)

R

,

Dra

in-t

o-S

ourc

e O

n R

esis

tanc

eD

S(o

n)(N

orm

aliz

ed)

V = 10V GSA

I = 9.5AD

IRF520NPbF

Fig 7. Typical Source-Drain DiodeForward Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

0

100

200

300

400

500

600

1 10 100

C, C

apac

itanc

e (p

F)

DSV , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHzC = C + C , C SHORTEDC = CC = C + C

GSiss gs gd dsrss gdoss ds gdC iss

C oss

C rss

0

4

8

12

16

20

0 5 10 15 20 25

Q , Total Gate Charge (nC)G

V

, G

ate-

to-S

ourc

e V

olta

ge (

V)

GS

V = 80V V = 50V V = 20V

DS

DS

DS

A

FOR TEST CIRCUIT SEE FIGURE 13

I = 5.7AD

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4

T = 25°CJ

V = 0V GS

V , Source-to-Drain Voltage (V)

I

, Rev

erse

Dra

in C

urre

nt (

A)

SD

SD

A

T = 175°CJ

0.1

1

10

100

1 10 100 1000

V , Drain-to-Source Voltage (V)DS

I ,

Dra

in C

urre

nt (

A)

OPERATION IN THIS AREA LIMITED BY R

D

DS(on)

10µs

100µs

1ms

10ms

A

T = 25°C T = 175°C Single Pulse

CJ

IRF520NPbF

Fig 9. Maximum Drain Current Vs.Case Temperature

Fig 10a. Switching Time Test Circuit

VDS

90%

10%VGS

td(on) tr td(off) tf

VDS

Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %

Fig 10b. Switching Time Waveforms

RD

VGS

RG

D.U.T.

10V

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

+-VDD

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:1. Duty factor D = t / t2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

The

rmal

Res

pons

e(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

25 50 75 100 125 150 1750.0

2.0

4.0

6.0

8.0

10.0

T , Case Temperature ( C)

I ,

Dra

in C

urre

nt (

A)

°C

D

IRF520NPbF

Fig 12a. Unclamped Inductive Test Circuit

VDSL

D.U.T.

VDD

IAS

tp 0.01Ω

RG +

-

tp

VDS

IAS

VDD

V(BR)DSS

10 V

Fig 12b. Unclamped Inductive Waveforms

D.U.T.VDS

IDIG

3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

Fig 13b. Gate Charge Test Circuit

QG

QGS QGD

VG

Charge

10 V

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

0

40

80

120

160

200

25 50 75 100 125 150 175

J

E

,

Sin

gle

Pul

se A

vala

nche

Ene

rgy

(mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 25V

ITOP 2.3A 4.0ABOTTOM 5.7A

DD

D

IRF520NPbF

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple ≤ 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

Fig 14. For N-Channel HEXFETS

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

RG

VDD

• dv/dt controlled by RG• Driver same type as D.U.T.• ISD controlled by Duty Factor "D"• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer

*

IRF520NPbF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/03

Data and specifications subject to change without notice.

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

- B -

1.32 (.052)1.22 (.048)

3X 0.55 (.022)0.46 (.018)

2.92 (.115)2.64 (.104)

4.69 (.185)4.20 (.165)

3X0.93 (.037)0.69 (.027)

4.06 (.160)3.55 (.140)

1.15 (.045) MIN

6.47 (.255)6.10 (.240)

3.78 (.149)3.54 (.139)

- A -

10.54 (.415)10.29 (.405)2.87 (.113)

2.62 (.103)

15.24 (.600)14.84 (.584)

14.09 (.555)13.47 (.530)

3X1.40 (.055)1.15 (.045)

2.54 (.100)

2X

0.36 (.014) M B A M

4

1 2 3

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

HEXFET

1- GATE2- DRAIN3- SOURCE4- DRAIN

LEAD ASSIGNMENTS

IGBTs, CoPACK

1- GATE2- COLLECTOR3- EMITTER4- COLLECTOR

TO-220AB Package OutlineDimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

EXAMPLE:

IN THE ASSEMBLY LINE "C"

THIS IS AN IRF1010

LOT CODE 1789ASSEMBLED ON WW 19, 1997 PART NUMBER

ASSEMBLYLOT CODE

DATE CODEYEAR 7 = 1997

LINE CWEEK 19

LOGORECTIFIER

INTERNATIONAL

Note: "P" in assembly lineposition indicates "Lead-Free"

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/