More Imaging - European Space Agencyemits.sso.esa.int/emits/owa/loadfiles.showfile?p_file... · 2011-10-28 · Solutions to enhance blue response Get rid of the dead zone through

More Imaging Luc De Mey - CEO - CMOSIS SA

Annual Review / June 28, 2011

© copyright 2011– CMOSIS SA Annual Review / June 28, 2011

More Imaging

• CMOSIS: Vision & Mission

• CMOSIS’s Business Concept

• On-Going R&D: More Imaging


CMOSIS’s Vision

Image capture is a key technology with ever growing number of

applications.

Specific imaging applications require specific and optimized Image Sensors.


CMOSIS’s Mission

Be a leading supplier of Image Sensors optimized for Industrial,

Professional and Scientific Applications.


CMOSIS’s Business Model

Development, Qualification, Production and Supply of CMOS Image Sensors

‣ Standard of-the-shelf Sensors

‣ Custom(ised) Sensors


CMOSIS Markets


CMOSIS’s Company Details

•  Creation November 16, 2007

•  Capital 5.300.000 €

•  Investors

– Management and Personnel

– Financial Investors: Capital-E, Vinnof, ING Belgium, ING Activator Fund

•  Personnel 35


CMOSIS Company Details

Facilities Antwerp


CMOSIS Company Details

Facilities Antwerp

Area: 1100 m2

‣  class 100 cleanroom ‣  8” and 12“ wafer tester


CMOSIS class 100 Clean Room


CMOSIS: 25 years of CMOS Image Sensor History


CMOSIS’s Team Publications

> 100 man-years of relevant experience


Patent/Patent Applications

•  New CMOS pixel architectures (8-T)

•  New on-chip ADC’s

•  BSI technology

•  CMOS TDI

•  Wafer scale imagers

•  CMOS binning techniques

•  Total: 12 patent families


CMOSIS’s Patents - IP

•  12 CMOSIS patents filed in 2009-2010

•  1st patent granted, protecting our column AD converter structure


CMOSIS Standard Products

Standard Products



•  CMOSIS Machine Vision: CMV

•  CMOSIS Low Noise: CLN


CMV2000

CMV12000 CMV4000

CMOSIS Standard Products CMV

•  Applications

–  Machine Vision - Factory Automation

–  Broadcast

–  Motion Analysis

–  High End Surveillance

–  Matrix Code Reading

–  Intelligent Traffic Systems - ITS



TypePixel pitch

µmOptical format FPS Bits Status

300

2000

4000

12000

7,4 1/3” 600 12 Samples August ’11

5,5 2/3”340

75

10

12Production

5,5 1”180

45

10

12Production

5,5∅ 28 mm

APS-like

180

300

350

12

10

8

Samples May ’11



•  Common features –  Global pipelined shutter (8-T) –  Low FPN

–  Digital serial LVDS interface

–  Low dark noise

–  High electronic shutter efficiency

–  Column ADCs

–  Integrated sequencer/controller

–  0.18 µm CMOS Image sensor technology



CMOSIS New CMV12000


New CMOSIS CMV12000

•  Global pipelined 8T pixel shutter with CDS –  Global shutter required in machine vision market –  High sensitivity achieved through CDS and high conversion gain

–  High shutter efficiency because of pixel architecture

•  High speed column ramp ADC architecture

•  High resolution with high frame rate –  12 Mpixels

–  Fully pipelined readout scheme •  Designed for > 300 fps @ 10 bit resolution → I/O speed > 36 GbpsCurrently

ongoing tests show even:

> 400 fps (full frame) @ 10 bit resolution → I/O speed > 50 Gbps

> 1000 fps (HD 2M) @ 10 bit resolution → I/O speed > 25 Gbps

What makes this sensor unique?


CMV12000 Sensor features

Feature

Resolution 4096 x 3072

Pixel size 5.5 µm x 5.5 µm

Max. frame rate 180 fps (12 bit) 300 fps (10 bit) 350 fps (8 bit)

Pixel control Row windowing (up to 32 separate ROIs), sub-sampling, 2x2 binning

Image flipping X and Y mirroring

Output 64 LVDS outputs @ 600 Mbps

Multiplexing To 32, 16, 8, 4 and 2 or 1 output(s)

Sensor output 8 bit, 10 bit, 12 bit

Package Ceramic µPGA package (237 pins)

Power consumption < 2.5 W (full frame, 300 fps, 10 bit)

Technology 0.18 µm CIS 1P4M

Noise < 10/13 e-

Dynamic range > 62/60 dB


CMV12000 Sample image


CMV Standard Products

•  CMV2000/4000 à Industry standard à CMOSIS inside


CMOSIS CMV2000 Movie

CMV2000, 300fps


CLN1000 Standard Product - Low Noise

TypePixel pitch

µmOptical format FPS Bits Status

1000 10 1” 20 Analog Samples Available


CLN1000 Standard Products CLN - Low Noise

Common features

–  4T, dual transfer gate rolling shutter pixel

–  Low dark noise: 3,3 e-

–  High full well: 99.000 e-

–  High linear dynamic range: 89 dB

–  0.18 µm CMOS Image sensor technology


CLN1000 - Low Noise

•  Applications

–  Surveillance

–  Microscopy

–  Diagnostics

–  Astronomy

–  X-ray

–  Fluorescence

–  Luminescence

–  ...


Standard Products

Custom Design


Analysis and Architectural Study

Device Test & Characterization

Detailed Design & Layout

Prototyping

Device Qualification & Production

CMOSIS Custom Design


CMOSIS Full Custom CIS Projects

Active projects:

‣ 3 Space customers, 5 active projects: ESA, CNES,

‣  >12 Industrial customers


CMOSIS Customised Standard Products

•  Custom packages

•  Chip-Scale Packaging

•  Custom cover glass: NIR filter, ARC, band-pass filters,

•  Integrated Thermo Electric Cooler (TEC)

•  Custom color filters

•  Back Side Illumination

•  ....


CMOSIS Custom Package

Integrated Thermo Electric Cooler


CMOSIS Custom Package

Chip-Scale Packaging


CMOSIS R&D

More Imaging


CMOSIS Technology differentiators…

Low noise global shutter pixels

Fast column AD converters

Backside illumination technology

High frame rates High dynamic range

pixels

Thin back-end process


CMOSIS Core Technologies

•  Global shutter pixels with low read noise, high shutter efficiency, and low FPN

•  High speed on chip 10/12/14 bit column ADC’s

•  Backside Thinning and Illumination

•  CMOS Time Delay and Integration (TDI)

•  Radiation hardened CIS

•  Large area (wafer scale) imagers with high yields (stitching!)

•  CIS system-on-a-chip

•  Very high frame rate imagers


CMOSIS Long Term R&D Plan

•  Move to more advanced CMOS technologies: 0.110 µm or below

–  Smaller pixels

–  More complex pixels

–  Better electro-optical performance

•  On chip image processing electronics > smart imagers

•  Improved image sensor performances:

–  Lower read noise: ≤1e-

–  Increase full well: higher SNR

–  High performance ADC: resolution, speed

–  ≥ 1 GBit/s LVDS type interfaces



Smaller Technologies


Global shutter pixel – smaller pixels

8 transistors, 2 source followers, 2 capacitors

Need for smaller optical formats & complex pixels ⇒ smaller technologies


The importance of a thin back-end

6 µm pixel

…even for a large pixel


CMOSIS moves to smaller technologies…

•  First tape-out’s in 110/90 nm/300mm

•  Moving to 90/65 nm/300mm


Excellent quantum efficiency


Excellent angular response > 95% at 20° angel


CMOSIS smaller architectures – 300mm


CMOSIS smaller architectures – 300mm



Back Side Illumination


Backside Illumination – Address Many Challenges

Sensitivity

Dynamic Range

Frame Rate

Resolution

Functionality

Angular Response

Higher QE

Higher sensitivity

More readout lines

No metal blocking

More complex pixels

Smaller pixels

Picture by Dr. Avi Strum, TowerJazz


High End Image Sensor Challenges

Sensitivity Dynamic Range Frame Rate

Resolution Functionality Angular Response Picture by Dr. Avi Strum, TowerJazz


Backside illumination: applications

•  Scientific and industrial vision markets –  Performance : low noise, high QE

–  Large pixels: MTF / cross-talk less problematic

–  Monochrome

–  Increased UV sensitivity: for inspection, analysis applications, EUV for science/space.

–  Global shutter, without degradation of noise and PLS in BSI

–  Performance: low dark current, good read noise

Our developments focuses on this area


FSI & BSI CMV4000 4 Mpixel – 180 fps


FSI & BSI CMV2000 2.2 Mpixel 340 fps


•  Development on CMOSIS CMV2000 / CMV4000te (EUV),

•  Excellent PLS: 1/20,000 – best in world for BSI global shutter sensor

•  Not (only) for visible light QE improvement –  Extension of sensitivity to UV, EUV, electron detection

CMOSIS Back Side Illumination

Frontside CMV2000 with µlens Backside CMV2000


Backside illumination: quantum efficiency

+ improvement of yield (hot clusters)


Cause of low sensitivity in blue & UV

Dead-zone below 450nm caused by pre-doped profile out-diffusing during CMOS processing.


Solutions to enhance blue response

Get rid of the dead zone through either:

1.  Backside implant + (laser) anneal with Excico Laser

2.  Further etching of the silicon

3.  Deposition of a layer with fixed negative charge (Sapphire Al2O3)

4.  A combination of 2 & 3


QE – further etch improves QE again

57

Some improvement in blue but not good enough yet


CMOSIS BSI Flow

Start material: SOI wafer specific doping profile!

Wafer processing: !0.18 µm CMOS!

Wafer bonding!(adhesive or ox-ox)!

Backside implant!

Laser anneal!

Pad opening!

Packaging (assembly)!

Wafer test! AR coating (+CFA, …)!

Final test!

Thinning - stop on BOX!

Silicon etch!

Al2O deposition!

BOX etch!

CMOSIS Proprietary Flow



> High Dynamic Range


More dynamic range with 2 transfer gates

Pixel with 2 floating diffusions –  First transfer to smallest FD

High gain for dark signals

–  Second transfer of remaining photocharges to larger FD

low gain for bright signals

–  2 outputs per pixel

–  Simplification: select which FD to use based upon required gain.

TX1

TX2

FD2

PPD

FD1

Cfd1 << Cfd2

TX2 TX1 PPD_P

PPD_N FD2 FD1

P-‐epi

illumination

Out

image1

image2


CLN1000 - 70 dB + 70 dB = 90 dB


CLN1000 CHARACTERIZATION TABLE


CLN1000 SENSOR FUNCTIONALITY

LOW GAIN CHANNEL HIGH GAIN CHANNEL


High Dynamic Range & BSI

•  BSI version:

!  Fully functional

!  SOI start material: 3um epi

!  Customized post-processing

!  Buried oxide (BOX) remove

!  Excellent QE in UV

•  Future development

!  Digital out (on-chip column-level ADC)

!  Timing on-chip

!  Full product


QE – 10 µm pixel, 3 µm thickness BSI

UV sensitivity


CMOSIS Manufacturing Flow – Fabs:

- 180nm

- 110/90nm - 90/65nm

- 180nm

- 180nm

- 180nm

More Imaging Luc De Mey - CEO - CMOSIS SA

Annual Review / June 28, 2011

Thanks' for your attention!

Documents

More Imaging - European Space Agencyemits.sso.esa.int/emits/owa/loadfiles.showfile?p_file... · 2011-10-28 · Solutions to enhance blue response Get rid of the dead zone through