MOCVD Horizon for Cost & Efficiency · MOCVD Horizon for Cost & Efficiency Subject: Presentation from the 2013 DOE Solid-State Lighting Manufacturing R&D Workshop. Created Date:

MOCVD Horizon for Cost & Efficiency

Jay Montgomery

DOE SSL Manufacturing R&D Workshop Boston, MA June 5-6, 2013

Copyright ©2013 Veeco Instruments Inc. 2

Current MOCVD Challenges

• Process ‒ Capacity is not enough ‒ Improved equipment performance is required

• Integration

‒ Testing at the device level is most relevant and critical

• Inflection Points ‒ Significant interest in GaN-on-Silicon ‒ Standardization of PSS ‒ Emerging competition


Technology and Cost Curve: Still A Way to Go • CoO will continue to drive the demand curve for earlier adoption

• The market appears to be focused on 4” production and can benefit greatly from high-capacity, automated equipment with significant floor-space efficiency

• GaN-Si LED manufacturing: ‒ Emerging quickly to leverage significant silicon knowledge and capital

‒ Can benefit from a high-yield reactor requiring alternate hardware

less than

of World’s Lighting is LED

5%


DOE Funding Complements Industry Investments to Keep Pace with SSL Roadmap Even In Downturns

• 3.0x increase in CapEx Efficiency • >2.5x lower Cost of Ownership

1.0

0.77

0.64

0.44 0.39

2010

0.33

Next Gen C1 Next Gen C2 Roadmap

2013 R&D >$50M


4” and 6” Wafer Production Will Dominate Market Pe

rcen

tage

of P

rodu

ctio

n Sy

stem

by

Waf

er S

ize

(%)

85%76% 72%

65%56%

48%34%

27% 21%

15%21%

22%27%

32%36%

42%

41%40%

2%6% 9% 11% 14%

19%25%

29%

1% 2%5% 7% 10%

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

2009 2010 2011 2012 2013 2014 2015 2016 2017

8" Wafer6" Wafer4" Wafer2" Wafer

Notes: Yole and Veeco estimates.

Wafer size production

CAGR 2014-17

2” -13%

4” 19%

6” 48%

8” 90%

• 4” and 6” will dominate LED production from 2014 • PSS adoption has slowed transition to larger wafers


Leveraging MOCVD Performance

• Improvements & advances in epitaxial growth cascade through the manufacturing & R&D supply chains

Brightness

Structure Vertical vs. Horizontal

Materials

Substrates

Color

Wafer-Level Binning

Blend Binning

Electrical

Driver Integration

Process Control

Wafer-Level Binning

CoO

Capital

Epi-Specific Metrology

Silicon-Based 200mm Reuse


MOCVD Enables Aggressive Chip Cost Reduction Description 4” Sapphire

Production Next-Gen GaN:Si

Relative Brightness (lm/mm2) 100% 92%

Chip Yield (lm/mm2, Vf) 75% 85%

Wafer Mean Wavelength Yield (5 nm bin) 85% 95%

WiW Wavelength Yield (5 nm bin) 85% 90%

Relative Chip Cost ($/lm) 100% 76%

Continued DOE funding can accelerate disruptive Next-Gen MOCVD GaN-on-Si technologies for

>20% cost reduction of medium power SSL chips to stay ahead of current and emerging Chinese

competition


A Model of DOE-Funded Success

Fund Key Manufacturing

Enablers Leverage EPI CoO

GaN:Si Capital Reuse

Encourage Collaboration Close cooperation

within SSL food chain Materials – OEM Analytical – Fab

Rapid Prototype Pilot

Production Reduce barriers to

testing new process equipment

Focused strategy to accelerate low-cost commercialization


2007 2008 2009 2010 2011 2012

Mar

ket S

hare

MOCVD Success Supported by DOE • Created high-tech U.S. manufacturing jobs • Increased U.S. competitiveness • Accelerated the LED roadmap

K465 24%

29%

44%

62%

51%

MaxBright MHP (2012) • ↑ 20% WiW Uniformity • ↓ Cost of Ownership

MaxBright (2011) • ↑ 5x Productivity • ↑ Footprint Efficiency

K465i (2010) • Improved Flow Uniformity • Improved Serviceability

…. Long-term

Next Generation Platform • ↑ Yield • ↓ CoO • In-situ Control • Automation

Documents

MOCVD Horizon for Cost & Efficiency · MOCVD Horizon for Cost & Efficiency Subject: Presentation from the 2013 DOE Solid-State Lighting Manufacturing R&D Workshop. Created Date: