MICROWAVE RF PRODUCTS - mw- · PDF fileOur teams have worked with other development teams and shared efforts in a large variety of EW programs, such as RWRs, ECMs, ESMs, Elint, MWS

MICROWAVERF

PRODUCTS

CATALOG

Operations and MW Business Line

MICROWAVERF

PRODUCTSCATALOG


© 2015 All materials in this issue are subject to copyrights owned by Elbit Systems-EW and SIGINT-Elisra and other individuals or entities.All Other Rights Reserved. The Elbit logo is a trademark of Elbit Systems. Other companies and brands, products and service names are trademarks or registered trademarks of their perspective holders. This document is preliminary and specifications may be subject to change without further notice.

48 Mivtza Kadesh St., Bene Beraq 5121701 IsraelTel. +972-3-6175655 Fax. +972-3-6175299

Website: www.mw-elisra.comE-mail: [email protected]

Catalog Reference No. 45140537

For custom electrical and mechanical specifications,Please contact EW and Sigint- ELISRA

Sales: [email protected] (or) +972-3-6175655

Table of ContentsElisra-MW Business Line 5General 5

Subsystems & SuperComponenets 6

In House MMIC Development Suit 6

Micro-Electronics 6

Transmitters 6

Activities 7

Modern Facilities and Experienced Staff 7

COMPONENTS PRODUCTS 10RF Switches 11

Transfer Switches 12

Hight Power Switches 12

Frequency Translators 13

Frequency Discriminator 13

Mixers 14

COMB 15

Limiter 15

Active Multiplier 16

Digitally Controlled Attenuators 17

LOG IF Amplifier 18

Linear IF Amplifier 19

Limiter IF Amplifier 19

DLVAs 20

Detector Video Amplifiers 21

Threshold Detector Amplifires 21

Low Noise Amplifiers 22

Power Amplifires 23

Pulse Power Amplifiers 23

MMIC 24

ASSEMBLIES PRODUCTION MIC’s 26Dual Channel Unit (DCU) 27

Up Converter 27

Super Heterodyne Receiver (SHR) 28

Dual Channel Front End Receiver 28

Dual Input Front-End Receiver 29

RF Receiver 29

Switched Filter 30

Up/Down Converter 30

3

S-Band Transponder 31

Polarity Switch 31

Dual Band LO Distributor 32

Dual Output Front End Receiver 32

DIFM Receiver 33

Built in Test (BIT) Unit 33

Dual Output AGC Unit 34

Amplifier & Detector 34

T/R Module 35

FTO 35

Input Amplifiers 36

Data Link Front End 36

Data Link Transmitter 37

X-Band RF Front End 37

Extended Range DLVA Assy 38

Frond End Receiver 38

Test Oscillator 39

Frequency Synthesizer 39

SOLID STATE TRANSMITTERS 42High Power Systems 1MHz-6GHz, up to 2000Watts 43

Solid State Power Amplifier 30MHz-500MHz 44

4 MICROWAVE RF PRODUCTS • CATALOG NO. 45140537

Elisra-MW Business LineAssemblies and Subsystems in Various

RF & Microwave TechnologiesGeneralElisra-MW Business Line is a recognized leader in sophisticated electronic systems, subsystems and supercomponents (Integrated Multi-function Assemblies) for the defense and commercial markets. Elisra-MW Business Line has over 45 years of proven experience in supplying best-of-class and state-of-the-art supercomponents and subassemblies for a wide variety of RF and microwave applications covering the frequency range of DC to 50 GHz. Elisra-MW Business Line has gained vast experience in all relevant technologies required to design, develop and produce passive and active microwave products as follows:

Elisra-MW Business Line’s highly skilled teams of engineers and technicians, renowned for their technological expertise, has been the cornerstone of our leadership status in both military and commercial markets. Elisra-MW Business Line is an excellence center in global scale for microwave and miniaturization technologies.

Modern production facilities operating under a stringent framework of quality assurance standards have established Elisra-MW Business Line as a world class and preferred supplier of products with unsurpassed reliability.

The Elisra-MW Business Line has cooperated with major EW system suppliers throughout the world. Our teams have worked with other development teams and shared efforts in a large variety of EW programs, such as RWRs, ECMs, ESMs, Elint, MWS COM-JAM, SIGINT and others. The mutual efforts of our engineers together with the EW system engineers generate definition of microwave subsystems which enable the system to achieve optimization in performance and costs which has been implemented in technologies within Elisra-MW Business Line’s Microwave control and expertise such as Supercomponents and MCMs, discrete components sub-assemblies and more.

Main Technologies Vs Products

Technologies Products

Multi-Layer RF Circuits RecieversHigh Reliability MIC & MMIC Transmitters

MCM TranspondersConnectoriesed Integration Power Amplifiers

Si, GaAs, GaN, V/LDMOS Components Synthesizers & RF Sources

Thin-Film & Thick-Film Datalink TransmittersOpto-Electronics Packaging Repeaters

RF & Digital Integration Low & High Power PIN Diode SwitchesDLVA's

Digital & Analog MCM

5

Subsystems & SuperComponenetsElisra-MW Business Line can provide excellent cost-effective solutions to these challenges.Such intimate effort of our and your engineering teams can generate subsystems such as super-heterodyne receivers (SHR), IFM receivers, low-power RF ECM Systems, video transmitters, Front End Receivers (FER), etc.Implementation of such subsystems can result in a line replaceable unit (LRU), stand alone units/boxes or shop replaceable units (SRU) or subassemblies.

SuperComponenets (Integrated Multi-function Assemblies)A complete miniaturized subsystem, consisting of quality microwave components densely packaged into one enclosure.Supercomponents represent an answer to the ever-present challenge of integrating high microwave performance into small packages.As a recognized leader in the development and manufacture of supercomponents, Elisra-MW Business Line has leveraged its knowledge-base of diverse technologies and microwave components into providing the best possible subassemblies on the market today.

These miniaturized subsystems consist of numerous microwave components which are assembled into a small package. The package includes such diverse components as amplifiers, switches, oscillators, filters and MMIC devices.Every component is carefully designed and adapted to meet full performance custom-specifications, while taking into account the particularly compact supercomponent enclosure requirements.

Since compact integration eliminates many connector interfaces, overall electrical performance is often enhanced. Our supercomponents frequently demonstrate improved VSWR and enhanced gain and phase characteristics.

In House MMIC Development Suit � Passive and Active 0.15um PHEMT GaAs MMICs D.C-50GHz

� Passive components printed on Hard substrates �Multi Function Integrated Circuits �Multi - Layer Technology � In House On-Wafer (Probe Station) Testing �Multi Layer Buried Components

Micro-ElectronicsElisra-MW Business Line’s Microelectronics group has been a leader in the innovative utilization of hybrid technologies for over 45 years. Our hybrid products are key elements in EW systems produced by some of the major manufacturers of the world. With core competencies in hybrid technologies we have been able to offer advanced products with superior and reliable performance, such as:

� Detector Log Video Amplifiers (DLVAs) � Logarithmic IF Amplifiers � Frequency Discriminators

Expertise in thin/thick film and MCM technologies, backed by modern facilities and know-how, has made Elisra-MW Business Line a distinguished contender in the hybrid product arena.

TransmittersElisra-MW Business Line’s RF Transmitter Activity, a section within the company’s Microwave Business Line, is a technological leader in the design and development of a wide range of compact reliable RF transmitters and amplifiers for communications and ECM applications. Our RF Transmitter section capabilities are proven in the microprocessor control and computer interfaces used in its transmitters and amplifiers. Our development Main Features enable sophisticated real-time control of amplitude, frequency, modulation type and in-depth BIT. Just as well, our products offer high speed solid-state switching and frequency hopping technologies. Our standard product range is enhanced by flexible production facilities, enabling us to handle customized orders rapidly and cost effectively. The facility at Elisra-MW Business Line is equipped to deal with most methods of environmental testing. Tests are performed during R&D qualification (MIL-STD-810). Environmental stress screening (utilizing MILSTD- 2164) is applied on 100% of our amplifiers. Our growing list of satisfied clients list includes notable companies from Europe, Asia and IsraelOptimal Operating Efficiency and Linearity (Class AB)

� Solid State Architecture: GaAs, GaN, MOSFET, LDMOS, Bipolar

� Digital full Status Monitoring � System Structures include: Amplifiers, OPU, Antennas and Installation Support.

� Remote Operation: RS232 / RS422 / RS485/ USB / Dry Contact


Activities

Microwave Multi-function Assemblies �Multi-Function Assemblies (MIC’s) � Frequency Synthesizers � RF & Microwave- Receivers � mmw Sub-Assemblies � Pin Diode Control Devices

High Power Systems SS HPA � Hp Switches � Pulsed AMPS � TWT Replacement �Microwave Links � Transmitters

Microelectronics & Electroptics � Receiving Products �MCM’s � Custom Hybrids � Laser Receivers

Modern Facilities and Experienced

Staff � CAD Tools � Clean Room � Automatic Bonder � Automatic Test Setup � Laser Welder � Hermetically Sealing � Environmental Lab � Thermal Vacuum Chamber � Quality Assurance

7

PRODUCT

PRODUCT

COMPONENTSCOMPONETSPRODUCTS

COMPONENTS PRODUCTS

RF Switches 11Transfer Switches 12Hight Power Switches 12Frequency Translators 13Frequency Discriminator 13Mixers 14COMB 15Limiter 15Active Multiplier 16Digitally Controlled Attenuators 17LOG IF Amplifier 18Linear IF Amplifier 19Limiter IF Amplifier 19DLVAs 20Detector Video Amplifiers 21Threshold Detector Amplifires 21Low Noise Amplifiers 22Power Amplifires 23Pulse Power Amplifiers 23MMIC 24


For custom electrical and mechanical specifications, please contact EW and Sigint- ELISRA Sales: [email protected] (or) +972-3-6175655

RF Switches(Series of SPST to SP16T Switches)

Main Features � Narrow, wide and Ultra-wide band: 0.5-18GHz � Solid State � Low Insertion Loss: 1.2dB to 2.8dB (Depend on the type of the switch)

� High Isolation: 60dB typ. � VSWR: 1:8:1 typ. � Integral TTL driver � Bias VCC: (+5V/ -12V) (Unless it will be define differently)

� Power Handling Capability: 100mW to 1W � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � Reflective Switching Speed: 25 ns typ. � Non- Reflective Switching Speed: 35 ns typ. � Hermetically sealed

Options � Low Video Leakage � Switches Without Drivers � Another Frequency Band � Lower Insertion Loss Can Be Provided

11COMPONENTS PRODUCTS


Transfer Switches

Main Features � Narrow, wide and Ultra-wide band: 0.5-18GHz � Low Insertion Loss: 1.5dB typ. � High Isolation: 50dB typ. � VSWR: 1:5:1 typ. � Integral TTL driver � Bias VCC: (+5V/ -12V) (Unless it will be define differently)

� Power Handling Capability: 200mW � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � Hermetically sealed

Options � Other Frequency Bands are Available

� Higher Isolation is Available

CASE 1

CASE 2

Hight Power Switches

Main Features � Power Handling 100 Watt CW � 6-8 GHz Frequency Range Coverage � Patented Transition Technology � SPDT Configuration � Low Loss 1.0 dB typ. � High Isolation 24dB typ. � Compact and Lightweight � VSWR � Highly Reliable MIC Technology � Integral TTL Driver � Switching Speed � Special Heat Dissipation Methodology

Options � RF Connectors are SMA Female � Includes Built-in Driver � Switches Can Be "Tailored" to Customer's Requests



Frequency Translators(Phase shifter)

Main Features � High Performance �MIC Quadrature Hybrid Design � 6 Bit TTL Digital Drive � Low Insertion Loss � Power Handling Capability: 0.1W (CW) � Operating Temperature: -55°C to+105°C � Range Temperature Coefficient: 0.025 dB/°C � Switching Time: 30 ns max � Power Supply Req. at 50 mA: 5V at 200 mA � Frequency Translation: 0 to 100 kHz � RF Connectors: SMA female

Options � Other Frequency Ranges

Frequency Discriminator

Main Features � Change of center frequency & Bandwidth � Internal limiter amplifier � Change of center frequency accuracy � DC Power supply: (+12V/ -12V) � VSWR: 2:1 typ. � Video load: 100ohm � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � Very good Rise time / fall time � SMA connectors or Drop in Pins. � Hermetically sealed

Options � Change of Slope �Matching between units � External offset adjustment � Limited IF output of +10dBm



Mixers

Main Features � Narrow, wide and Ultra: wide band 0.5-18GHz � Local Drive level: Low, Med., High & Super high � Low Insertion Loss: 8dB typ. � Isolation L to I: 25 to 30dB typ. � Isolation L to R: 25 to 30dB typ. � VSWR: 2.5:1 typ. � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � Hermetically sealed

Mixer Drive Level Characterestics

Local Drive Level

Drive Level Suffix

Local Drive Level Range (dBm)

Typical 1 dB Compression Point (dBm)

Typical Input Intercept Point per

min LO Drive (dBm)

Low Drive L +10 to +13 +4 +14

Med. Drive M +13 to +15 +8 +17

High Drive H +17 to +19 +11 +20

Super High Drive S +20 to

+23 +16 +25

High Frequency Mixers

FLO HARMONICS

FRF HARMONICS

1 2 3 4 5

1 0 25 18 40 352 40 40 50 55 553 65 >70 65 >70 654 >70 >70 >70 >70 >70

Low Frequency Mixers

FLO HARMONICS

FRF HARMONICS

1 2 3 4 5

1 - 25 10 30 302 40 45 50 55 553 63 70 69 >70 644 >70 >70 >70 >70 >705 >70 >70 >70 >70 >70

Intermodulation Suppression



COMB

Main Features � Change of center frequency & Bandwidth. � Input VSWR: 2:1 typ. � Excellent spurious rejection � Power Handling 10mW typ. � Very good phase noise (offset) � Bias VCC (+5V) unless it will be define differently. � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � Hermetically sealed

Options � Other modules of Combs are available upon request.

CASE 1

CASE 2

CASE 3

Limiter

Main Features � Frequency range: 20MHz to 18 GHz � Insertion loss: 2.0 dB typ. � DC Block: Built-In DC Block � VSWR: 2 : 1 � Typical LIM Threshold: +6.0 dBm � Leakage Power @ +20dBm: 12dBm typ. � Leakage Power @ +30dBm [1Watt]: 14dBm typ. � Operating Temp.: -45ºC to +85ºC � Storage Temp.: -65ºC to +125ºC � Temp. Cycling: -65ºC to +125ºC � Shock: 50 G,11mSec � Vibration: 20 G, 100 to 2KHz

Options � Other modules of limiters are available upon request.

16.00

16.52

5.1

IN

4.752.58

6.4

OU

T

0.39



Active Multiplier

Main Features � Input frequency range: 103.5 to 110 MHz � Input power range: +5 to +9dBm � Output frequency range: 8.38 to 8.88 GHz � Output Power: -25dBc minimum � Harmonics: 8±2 dBm minimum � Subharmonics and Spurious: -50dBc minimum � Isolation between outputs -40 dB minimum � Switching speed: 30 nSec maximum � Video leakage: -50dBc minimum (For PRF -180μSec and pulse width 330 nSec, pulse rise and fall time -20nSec, measured with spectrum Analyzer)

� Control: 1 TTL lines � Control logic "0" logic : Out 1 "1" logic : Out 2

� DC power +15V/425mA max -15V/20 mA max

� Additional spurious due to modulation on the DC line: -50dBc (when 1KHz pulses with amplitude 1OOmV will be applied to the +15Vdc pin)

� Connectors RF: SMA-F DC: RFI solder pins Control: Solder pins

Options � Other modules of active multipliers are available upon request.

6.5

40.0

60.00

50.00

IN

20.030.0

OUT2

CON -15V10.00

5.0OUT1

12.5

48.50

42.0

24.20

2.5

(x3)SMA/F

20.00

MOUNTING SURFACE

+15V GND

111.0

95.00

6 MOUNTING THREADSNC 4-40



Power Divider/Combiners

Main Features � Narrow, wide and Ultra-wide band 0.5-18GHz � High performance � Low Insertion Loss: 1.0dB typ. � High Isolation: 18dB typ. � VSWR: 1:5:1 typ. � Phase Balance: ±0.8° typ. � Amplitude Balance: ±0.2dB typ. � Power Handling Capability: 100mW to 1W � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � Hermetically sealed

Options � Other frequency bands are available � Lower Insertion Loss is available

CASE 1

CASE 2

CASE 3

Digitally Controlled Attenuators

Main Features � High performance �MIC Quadrature Hybrid Design � Dynamic Range: 60dB � Temperature Compensated � Non Reflective � VVA upon request � Power Handling 100mW (CW) �Minimum Attenuation Range 60dB � Accuracy of Attenuation ±1dB � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � Hermetically sealed

Options � Other Models of Digitally Controlled � Attenuators are Available Upon Request

CASE 1

CASE 2

H2H2

J9

H5H4



LOG IF Amplifier

Main Features � Extended frequencies Bandwidth between 30MHz up to 630MHz

� Dynamic range: 80dB � Log Linearity: ±0.6dB � DC Power supply: (+12V / -12V) � VSWR: 2:1 typ. � Video load: 100ohm � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � Excellent Rise time / fall time � SMA connectors or Drop in Pins � Hermetically sealed

Options � Change of center frequency & Bandwidth � Change of Slope �Matching between units � External offset adjustment � Limited IF output of +10dBm

CASE 1

CASE 2

CASE 3



Linear IF Amplifier

Main Features � Frequency Bandwidth: 10MHz or 20MHz � RF Gain to Video: 80dB � IF Output: +10dBm � Gain control: 50dB � DC Power supply: (+12V/ -12V) � VSWR: 1.5:1 typ. � Video load: 100ohm � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � SMA connectors or Drop in Pins � Hermetically sealed

Options � Change of center frequency & Bandwidth

Limiter IF Amplifier

Main Features � Frequency Bandwidth: 10MHz or 20MHz � Phase variation: ±3º � IF Output: +10dBm � Dynamic range: 65dB � DC Power supply: (+12V/ -12V) � VSWR: 1.5:1 typ. � Video load: 100ohm � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: 65°C to +125°C � SMA connectors or Drop in Pins � Hermetically sealed

Options � Change of center frequency & Bandwidth

microwave Division

42

Elisra Microwave Division Tel: 972-3-6175655 Fax: 972-3-6175299 E-mail: [email protected]

Receiving IF Products - Package Outline

B1, B10

B2, B11A3

A1, A2

Note:1 Offset potentiometer (optional)2 For A2 package, without IF OUT connector

Note:1 Offset potentiometer (optional)2 For A2 package, without IF OUT connector



DLVAs

Main Features � Typicals of DLVAs:

- DC Coupled - CW IMMUNE - AC Coupled - SDLVA - Successive

� Excellent Accuracy & Stability � Low power consumption � Dynamic range: 50dB � Fast Rise time and fall times � DC Power supply: (+12V/ -12V) � Video load: 100ohm � Operating Temperature Range: -55°C to +105°C � Storage Temperature Range: -65°C to +125°C � SMA connectors or Drop in Pins � Subminiature Hermetic package

Options � Change of Slope. � Other wide-band frequency ranges from 0.5 to 40 GHz or narrower bands with optimized performance characteristics.

CASE 1 CASE 2



Detector Video Amplifiers

Main Features � Operating Frequency: 8.9 – 10 GHz � Operating Voltage: ±15V ±1v � Current drain(max): 40mA � Video Output Voltage for (-20dBm RF power input): 200±35mV

� RF connectors(RF In): SMA female � VSWR (maximum): 2:1 � Operating Temperature Range: -62 to + 85 deg C � Load impedance :50 Ohm � DcVoltages,Vout,Gnd: Via solder pins � TTL response for pulse length (0. to 65 uSec): <20nSec

� RF Input Power: -20 to 0dBm

Application � EW Systems

Technology � Thin & Thick Film � PIN Diode Switches � Drop in Hybrid Amplifiers � Hermetically Sealed (Laser)

Threshold Detector Amplifires

Main Features � Frequency Range: 6-18/18-40 GHz � Sensitivity: -20dBm � Dynamic Range: -20 to 0dBm � Coupling: DC Coupled � Raw Video Output: Linear � Synthetic Video Output: TTL � Pulse Width: 100nSec to CW � Pulse Rise Time: 20nSec Max. � Raw Video Output Impedance: 1K ohm � Synthetic Video Output Impedance: 1K ohm � Input Impedance: 50 ohm � Power Handling: 17dBm Max. � Threshold Setting: -20 to 0dBm � Power Supply: +15V ; 30mA -15V ; 30mA � Environmental Spec.: MIL-E-16400 � Operating Temperature: -20 to +55°C





Low Noise Amplifiers

Main Features � Narrow, Wide, and Ultra-Wide Band 0.5 - 18 GHz � Low Noise: 2 dB Ultra-Wide, 0.9dB Narrow Band

� Output Power up to 37dBm Sat (5W) � Gain: between 7 to 70 dB � Custom Defined Amplifiers & Modules � SMA connectors or Drop in Pins � Subminiature Hermetic package

Options � Slope Amplifier between 2-18GHz � Temperature Compensation � Input Power Limiting � Gain Match � Phase Match � Any type of Screening

CASE 1

CASE 2



Power Amplifires

Main Features � High power, High efficiency � Reliability MIC Technology � Internally built in protections: Over voltage, Reverse Polarity, Supply Sequencing and Load Mismatch

� Gain: Between 7 to 70 dB � Custom Defined Amplifiers & Modules � Connectorized or Drop in Pins � Hermetic package

Options � Gain temperature compensation � Extended operating temperature � Dual matched outputs (Gain, Power and Phase) � TTL controlled DC shut down

Pulse Power Amplifiers

Main Features � High power output: up to 200Watt � Integrated power supply: 16 to 32 Volt � Fast switching speed: 200 nSec typ � Built in test circuit � Variable duty cycle: up to 10% � External synchronization � Load VSWR protected � Connectorized � Hermetic package

CASE 1

CASE 2


ASSEMBLIES


MMICMonolithic Microwave Integrated Circuit

Key Technologies � 0.15μm PHEMT GaAs MMICs Products � Customized Millimeter Wave MMICs � High frequency up to 50GHz �Multi-Function Chips

Capabilities � Passive and Active 0.15μm PHEMT GaAs �MMICs DC-50GHz � Passive components printed on Hard � substrates �Multi Function Integrated Circuits �Multi - Layer Technology � In House On-Wafer (Probe Station) Testing �Multi Layer Buried Components

Advantages � In House MMIC development suit (simulators, � analysis etc.) � Customized design � In House RF integration and testing � capabilities � Experienced teams of engineers, technicians, � assembles etc.

GaAs Products examples � Amplifiers � Switches �Mixers �Multipliers � DCAs � Attenuators � Equalizers � Phase Shifters �Multi Function Integrated Circuits - RF Core.

For more information -

See Catalog Number 45140538


ASSEMBLIES

PRODUCTIONMIC’s

ASSEMBLIES PRODUCTION

MIC’s

ASSEMBLIES PRODUCTION MIC’s

Dual Channel Unit (DCU) 27Up Converter 27Super Heterodyne Receiver (SHR) 28Dual Channel Front End Receiver 28Dual Input Front-End Receiver 29RF Receiver 29Switched Filter 30Up/Down Converter 30S-Band Transponder 31Polarity Switch 31Dual Band LO Distributor 32Dual Output Front End Receiver 32DIFM Receiver 33Built in Test (BIT) Unit 33Dual Output AGC Unit 34Amplifier & Detector 34T/R Module 35FTO 35Input Amplifiers 36Data Link Front End 36Data Link Transmitter 37X-Band RF Front End 37Extended Range DLVA Assy 38Frond End Receiver 38Test Oscillator 39Frequency Synthesizer 39



Dual Channel Unit (DCU)Super Heterodyne Receiver

Main Features � Frequency Coverage: VHF to S Band � 2 Phase and amplitude matched channels � Instantaneous Band Width: up to 500 MHz � High sensitivity (Front end depended) �Wide dynamic range � All Local oscillators are internal and synthesized with external reference CK

� Fast setting time: 100 nSec � Small size: 3U cut out (16x10x2 cm)

Applications � EW Receiver

Technologies � SMT

Up Converter

Main Features � Frequency: 0.1-18 GHz � Contains DCAs to Set the Gain �Modulation of Signal (Phase, Amplitude, � and Pulse Modulation) � Very Fast Settling Time: 100nSec � Suppression of Unwanted Signals to � prevent them from Reaching the � Transmitter � Low Overall Noise Floor � Small Size: 3U Cut-Out: 16x10x2 cm

Applications � EW Systems

Technologies � RF Multilayer including Micro Strip, MMIC & SMT

27ASSEMBLIES PRODUCTION MIC’s


Super Heterodyne Receiver (SHR)

Main Features � RF Input Frequency Range: 0.5 - 18 GHz � Triple Down-Conversion � Dynamic Range @ Input: -70 to 0 dBm � Noise Figure: 17 dB Typ � Phase Tracking (Pairs): ±4° � Switching Speed: 250 nSec � Spurious: 45 dBc � IF Output Frequency Range - Wide Band 1: 2-6 GHz Wide Band 2: 50 - 630 MHz (AUX)

� Variable Bandwidth - BW1: 500 MHz BW2: 140 MHz BW3: 40 MHz BW4: 4 MHz

� Phase Matching (Pairs): ±15º

� Low Power Consumption 5W

Applications � EW Receiver

Technologies �MIC

� Hermetically Sealed (Laser)

Dual Channel Front End Receiver

Main Features � Frequency Range: 0.5-18, 1-18, 2-18 GHz � High Output 1 dB Compression: +18 dBm � Low Noise Figure: 10 dB � Integrated Test Generator � B.I.T Capabilities: TTL Compatible � Low Power Consumption: 10 Watts


Technology �Microstrip MIC �MMIC Switches � Comb Generator � SMD � Hermetically Laser Sealing



Dual Input Front-End Receiver

Main Features �Wide Band Coverage: 18 to 40 GHz � Down-Converted: 2 to 16.5 GHz � High-Input Dynamic Range � High Power Protection � Internal MMW Bit Generators � Supports Two Receiving Antennas � Extermely Compact Housing


Technologies �MMIC & SMT


RF Receiver

Main Features � Frequency Range: 2-18 GHz � The frequency range is divided to five sub bands Q1- Q5 (band edge cross-over frequency)

� RF to IF Output � RF to Video Output

� High Dynamic Range RF to IF Converter

� VSWR in/out: 2:1 max.

� Recovery time: 100 nSec max.

� Power Handling Capability: +24 dBm max

� Third Order Intercept Point: +18 dBm min

� Isolation of the SPDT switch: 45 dB min

� Integrated unit


Technology � Hermetically Sealed (Laser)

� Suspended Quintuplexer

� PIN Diode Switches

�Microstrip

�MMIC



Switched Filter

Main Features � Frequency Range: 6-18 GHz

� 6 Channel Preselector

� High Speed Switching

� High Rejection Filters � Out of Band Rejection: 55 dBc min. � Gain: 3 –12 dB � VSWR In/Out: 2:1 max. � 1 dB Compression Point (Output): +13 dBm min. � Noise Figure: 14 dB max. � 3rd Order Intercept Point (Output): +20 dBm min � Switching Speed: 45 nsec min. � SP4T Isolation: 70 dB min.


Technology �Microstrip

�MMIC Amplifier

� PIN Diode Switches

� Comb Filters


Up/Down Converter


� IF Output: 3 GHz

� High Dynamic Range Down Converter

� High Speed Switches


Technology � Drop in Components

�MMIC Switches




S-Band Transponder

Main Features � S-Band Full Duplex � High Selectivity �Wide Dynamic Range, AGC (Up Converter & Down Converter)

� Built-In Test (BIT) � Off-the-Shelf Components (Special Design: Filters, Power Amplifiers.)

Applications � EW Systems, Missiles


Polarity Switch

Main Features � 1-18GHz SPDT with Limiters � Power Handling:

CW: +30dBm (1W) Pulse: 100W (1uSec pulse width @ 2% DC)

� Isolation: 30dB Min. � VSWR: 1.8:1 � Power supply: +12VDC/65mA � Temperature range: -540C to +850C


Technology �Microstrip MIC � SMT � Hermetically Laser Sealing



Dual Band LO Distributor

Main Features � Frequency Range:DUAL BANDS

� X: 8÷9 GHz

� UHF: 870 MHz

� Splitting & Amplifying

� Detects Input/Output Power Level: TTL Compatible

� Excellent In/Out VSWR: 1.3:1

� Excellent Output Stability: Less than ±1 dBm

� High Channel Isolation: 60 dB min

� Low Output Spurious Level

� Over All Power Consumption: 12W

Application � EW Systems � Transponders � Rx/Tx Assemblies

Technology � Couplanar Wave Guide

�MIC For X-Band

� SMD, MMIC For UHF Channel

Dual Output Front End Receiver


� Low Noise Figure: 10 dB

� High Output 1 dB Compression: +18 dBm

� High Path Isolation: 60 dB

� Low Power Consumption: 9W

� Low Spurious Level

� Internal Noise Source For BIT

Application � EW-Front End Receivers

Technology �Microstrip, Strip Line

�MIC, MMIC

� Comb Generator

� SMD

� Hermetically Laser Sealing



DIFM Receiver

Main Features � Digital Instantaneous Frequency Measurement � Frequency range: 0.5-18GHz � Output: 12 Bit TTL � Internal or external triggering � Frequency resolution: 1.1MHz � Pulse width range: 50nSec to CW � SNR: 3dB � Noise level: -50dBm � No need for calibration

Application � EW-Front End Receivers

Technology � SMT �MIC � Hermetically Laser Sealing

Built in Test (BIT) Unit

Main Features � Output Frequency: 5/8/12/15 GHz � Frequency Accuracy: ±5 MHz � Harmonics: Better than -25 dBc � Spurious: Better than -60 dBc � Type of Output: CW / Pulse � Attenuation Control (DCA): Low: No Attenuation High: 30 dB Attenuation

� Pulse Command (BMP): Differential TTL � Rise Time: 25nSecMax.


Technology � SMT �MIC � Hermetically Laser Sealing



Dual Output AGC Unit

Main Features � Frequency Range: 2-6 GHZ � Gain @ “0” Att.: 40 dB � Attenuation Range: 0-31 dB � Switching Speed: 250 nSec


Technology � Thin Film � Hybrid Balanced Amplifiers � PIN Diode Switches � Hermetically Sealed (Laser)

Amplifier & Detector

Main Features � Frequency Range: 12-18.5 GHz � Input Power: -32dBm min, to -10dBm max � Output Power: +13dBm min, to +16dBm max � N.F.: 7.0 dB max � Flatness: ±1 dB max � VSWR: 1.7:1 max � DC Supply: +12V / 420mA � RF Leakage: 90dBc � Spurious: 70dBc � Recovery Time: 10 ns max � Detection for CW and Pulse Signals � Output Voltage @ +13dBm Output Power: 500mV min

� Output Voltage @ +10dBm: 400mV max � Rise / Fall Time: 15ns � Detector Load: 100 ohm


Technology �Microstrip MIC




T/R ModuleMain Features

� 2-6 / 6-18 GHz � 5 bits 3600 Digital-controlled phase shifter � 5 bits, 31 dB Digital controlled attenuator � High Power MMIC amplifiers (4 Watts typ.) � Low noise MMIC amplifiers � High power protector switch / limiter � T/R switches and Circulator � Designated digital control Circuit

Application � EW Systems � Radar

Technologies � MMIC & SMT � GaN Power Amplifier

FTO

Main Features � Frequency Range: X-band � Tx Power: up to 1 Watt � Rx NF: < 1.4 dB � Amplitude Control: Tx and Rx � Phase Control: Common � Switching Speed: 25 nSec

Application � Airborne � Radar

Technology �Microstrip MIC




Input AmplifiersMain Features

� Frequency 2-18 GHz � Contain BIAS TEE drivers which enable external power feed of Amplifier

� To set the Noise Figure of the RF chain it is connected to.

� Contain Test source for calibration.


Technologies � Micro strip � MIC & MMIC


Data Link Front End

Main Features � TX Up Conversion � RX Down Conversion � High Performance: RX NF 3 dB RX Group Delay 2 nSec


Technologies � Micro strip � MIC & MMIC




Data Link Transmitter

Main Features � No. of Channels: Two (I&Q channels) � Type of Modulation: BPSK � Phase imbalance: ±2o

� IF Frequency: Designer can select � Transmit Frequency: X Band (10.3 to 10.5 GHz) � Output power abd Flatness: 25W � Carrier Rejection: 26 dBm min. � Power Supply: 28 ±4V � Size: 260mm X 90mm X 89mm (H) �Weight: <2.8 Kg

Applications � EW Systems, Missiles


� MIC & MMIC


X-Band RF Front End

Main Features � Frequency range: 10.3-10.5GHz � Frequency selection: Through three wire serial link (Data, Clock, Strobe), 160 Bit serial

� Noise Figure: Better than 3.5dB, better than 4.5dB @+71°C

� RF threshold input level: -110dB (typ.) � Input signal range: -110 to-40dBm � No of freq spots of operation: 20(min) � Final IF output Freq.: 19.8 MHz ± 2.0KHz � IF bandwidth: ±10 MHz � Input signal dynamic range: 70 dB(min) �Max input power (survival): +30dBm CW � Power input: 28 ± 4 Volt � RRSI: 0 to 5Volt range



� MIC & MMIC




Extended Range DLVA Assy

Main Features � Frequency Range: 1-18 GHz � TSS (20 MHz Video BW): -67 dBm � Logging Range: -67 to 0 dBm �Max. RF Input Power: 5W CW �Max. Peak (1μs width: 1 kHz PRF): 500W peak � SP2T RF Switch Isolation: 60 dB min. � RF Output: 0 dBm min. at -40dBm input 2nd harmonic level 7 dBc min.

� Pulse Width: 50 nsec to 150μsec � DC Power Protected for Reverse Polarity: Over Voltage up to ±18V Short Circuit Protection and EMI/EMC -15 VDC; 1.3A max. (1A Typ) -15 VDC; 300 max.

� Log Slop: 70mV typ � Log Linearity: (-64 to 0 dBm) ±2 dB � Log Accuracy: ±3 dB � DC Offset: ±100 mV �Matching Between Units: ±3 dB � Frequency Flatness: ±0s1.5 dB



Frond End Receiver

Main Features � Frequency Range: S Band � It is an outdoor unit and it located nearby the antenna

� The FE module has two main routes Tx and Rx � At RX rote Low NF (2dB typ.) � At TX rote High power transmitted (up to 500W CW)

� IP3 30dBm � High out of band rejection � Tx/Rx ISO 28dB � Built In Test � RSSI ability � Self-cooling � Quarter Wave Lightning Protector built in � Protection against open/short � The FE uses an external DC Power Supply � The FE communicates with a central controller via RS-485 interface bus and discrete control inputs

� The FE support software updates from the main connector

Application � EW-Front End Receiver. � Broadband

Technology �Microsrrip �MIC, MMIC � SMT � Hermetically Laser Sealing



Test Oscillator

Main Features � Frequency Coverage: 0.5-20 GHz � Step size: 10 MHz � Harmonic: 35 dBc � Setting Time: 150 uSec

Applications � Naval � EW Systems

Technologies � SMT �MIC � Hermetically Laser Sealing

Frequency Synthesizer

Main Features � Frequency Coverage: 2-18 GHz � Low Spurious: <-70 dBc � Harmonics: -50 dBc max � Noise Floor: -140 dBc � Phase-noise: -105 dBc/Hz@1 KHz � Ultra Wideband Frequency Coverage � Setting time: <200 nSec � Resolution 1 Hz � Phase and Frequency Coherent � FM Modulations Built-in � Front Panel Control: Option

Applications � EW � Radar

Technologies � SMT �MIC � Hermetically Laser Sealing


SOLID


SOLID

STATETRANSMITTERS

SOLIDSTATE

TRANSMITTERS

SOLID STATE TRANSMITTERS

High Power Systems 1MHz-6GHz, up to 2000Watts 43Solid State Power Amplifier 30MHz-500MHz 44



High Power Systems 1MHz-6GHz,

up to 2000Watts

Main Features � Optimal Operating Efficiency and Linearity (Class AB)

� Solid State Architecture: GaAs, GaN, MOSFET, LDMOS

� Digital full Status Monitoring � System Structures include: Amplifiers, OPU, Antennas and Installation Support.

� Remote Operation: RS232 / RS422 / RS485/ USB � Quality Control System based on AS9100 Together with the following standards: MIL-M-38510, MIL-STD-810, MIL-E-5400, MIL-E-16400, MIL-STD-2164, MIL-STD-461/462, IPC 610A, IPC 620

� Full rated power at VSWR 3:1 with constant current consumption @ ambient temperature of 55°C

� LPF and Dummy Load switch included internally � High speed T/R switch (optional ) � High reliability, fully qualified to meet the most extreme environmental conditions

� Fully protected against high VSWR (open/short), high input power, thermal overload, over/under voltage and reverse polarity, graceful degradation

� AC Supply: 100:240 VAC

Model Number

Frequency Range (MHz)

Rated Power (Watt) Min.

Technology Main Feature Power Consumption max.

Weight in kg

Size

4500A10000 1.5-30 1000W LDMOS 28V/110A 50 19''X7U

4D01A00000 1.5-30 1000W LDMOS Fast T/R SW. Included 28V/110A 50 19''X7U

4910A10000 1-30 1500W LDMOS 48V/100A 55 19''X7U4600A10000 20-100 500W LDMOS 28V/80A 52 19''X5U4D02A00000 20-100 1000W LDMOS 28V/168A 51 19''X7U4600A20000 100-500 250W LDMOS 28V/75A 51 19''X5U4D03A00000 100-500 500W LDMOS 28V/120A 62 19''X7U4930A10000 100-500 800W LDMOS 48V/70A 55 19''X7U4500A20000 30-520 500W GaN 28V/78A 55 19''X7U4500A40000 30-520 1000W GaN 28V/150A 71 19''X7U4920A10000 30-520 1500W LDMOS 48V/160A 71 19''X7U4600A30000 500-1000 200W LDMOS 28V/65A 42 19''X5U4174A00000 500-1000 500W LDMOS 28V/154A 48 19''X5U4930A20000 500-1000 800W LDMOS 48V/80A 58 19''X7U4920A20000 500-1000 1500W LDMOS 48V/140A 60 19''X7U4620A60000 500-1500 250W GaN 28V/45A 40 19''X7U4620A40000 1000-2500 500W GaN 28V/100A 45 19''X7U

4600A40000 1000-3000 100W GaN Fast T/R SW. Included 28V/32A 42 19''X5U

4940A10000 1000-3000 300W GaN Bank Filters Included 48V/90A 55 19''X7U

4800A20000 500-3000 2x100W LDMOS&GaN Fast Bank Filters Included 28V/110A 50 19''X7U

4900A40000 3000-6000 100W GaN 28V/35A 45 19"X3U4620A20000 100-500 500W LDMOS 28V/110A 51 19''X5U

43SOLID STATE TRANSMITTERS


Solid State Power Amplifier

30MHz-500MHz

Main Features � Innovative GaN Transistor Module Technology � Broad Band Frequency Range of 30-500MHz � Full RF Power of 1KW for up to VSWR of 2:1 � Extractable Amplifier Modules for Ease of Configuration / Maintenance

� Space Saving 19”x7U Drawer � New Cooling Combination of Heat Pipes / Air Conduction



Elbit Systems Ltd. - EW and SIGINT-Elisra Operations and MW Business Line48 Mivtza Kadesh St., Bene Beraq 5121701 IsraelTel. 972-3-6175655 Fax. 972-3-6175299Website: www.mw-elisra.comE-mail: [email protected]

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For custom electrical and mechanical specifications,Please contact EW and Sigint- ELISRA

Sales: [email protected] (or) +972-3-6175655

Documents

MICROWAVE RF PRODUCTS - mw- · PDF fileOur teams have worked with other development teams and shared efforts in a large variety of EW programs, such as RWRs, ECMs, ESMs, Elint, MWS