Microelectronics Lab ELCT605 - GUCeee.guc.edu.eg/Courses/Electronics/ELCT604 Electronic Circuits/Ana… · Microelectronics Lab ELCT605 Analog Lab Session #1 ELCT 605 Spring 2013

Microelectronics Lab

ELCT605

Analog Lab Session #1

1ELCT 605 Spring 2013 Analog Lab Session #1 Dr. Eman Azab

2

Outlines

1. Creating a schematic on Cadence

2. Calculating NMOS basic circuit DC operating point

3. Sketch NMOS I-V Characteristics

4. Parametric Analysis

5. Homework: PMOS DC Analysis

DC Analysis of MOSFET on Cadence

ELCT 605 Spring 2013 Analog Lab Session #1 Dr. Eman Azab


Creating a schematic on Cadence

• The software runs under Linux, do the following in order:1. Open a new Terminal from main menu or right click on desktop then

choose open terminal

2. Write the following command: virtuoso

3. From the menu tool bar select: file → New → Library; to create your

own library

4. In the library name write any name; this will be your library that you

will save your schematics in it

5. Select Attach to an existing Technology Library and then choose

tsmcN90rf



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• To create your schematic file; go to the menu toolbar and

select: File → New → Cellview, choose type schematic and

write your schematic file name then click ok



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• The window below is opened; this is the schematic editor

where you will draw the circuit you want to simulate



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• From the menu toolbar of the schematic editor select add

instance to start choosing your circuit elements (MOS, R, V

etc.)





• Example: For the NMOS circuit shown; obtain the dc

operating point for the MOS at Vin=0V, 0.5V and 2V

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• First step is to draw the circuit as shown below; then click on

save and check icon from the toolbar, DONE



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• After the circuit is saved the next step is to set the simulator,

choose from the schematic editor toolbar: Launch → ADE

L; the following window will appear


Calculating NMOS DC operating point

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• From the toolbar of ADE L window; choose Analysis →

Choose; then check on “dc” and “save DC operating

point”, click OK then Run

• After you receive successful simulation message from the

main window, go to ADE L main window then choose:

Results Print DC Operating Points; then the schematic

will appear and you can click on the MOS to see its DC

operating point

• Repeat for different ‘Vin’ values


Calculating NMOS DC operating point

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• From the toolbar of ADE L window:• Click on Analysis → Choose; then check on “dc” and in the

“sweep variable” check on “component parameter”

• Click on “select component” and the schematic will appear

choose the DC source you want to vary (for instance the gate

voltage)

• Write in the parameter name dc

• Put your preferences in the start and end values, step values

• Click ok

• Go to ADE L main menu to select the output you want to see

(for instance the drain current); choose outputs → to be

plotted → select on schematic

• Choose your desired I/V to plot

• Repeat to sketch IDS-VGS and IDS-VDS


Sketch NMOS I-V Characteristics

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• Sketch IDS-VGS for different channel widths, IDS-VDS for

different VGS using parametric analysis

1. Setup the analysis for DC sweep of VGS as the previous task

2. Go to your schematic and set the MOS width to „W‟ then click

save

3. Open ADE L; from the toolbar select: Variables → Edit; then

define the variable „W‟ with value „2µ‟; then click add

4. Go to ADE L window, from the toolbar select: Parametric

Analysis; then write in „Variable‟ your variable „W‟ and set its

value to be swept from 1µm to 2µm with step 0.2µm

5. Run

6. Repeat for VGS as your new variable from 0V to 1.2V with step

0.2V


Parametric Analysis


Parametric Analysis


Parametric Analysis


Parametric Analysis

Documents

Microelectronics Lab ELCT605 - GUCeee.guc.edu.eg/Courses/Electronics/ELCT604 Electronic Circuits/Ana… · Microelectronics Lab ELCT605 Analog Lab Session #1 ELCT 605 Spring 2013