MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 358

Microcrystalline and NanocrystallineSemiconductors

Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.

EDITORS:

Robert W. Collins

The Pennsylvania State UniversityUniversity Park, Pennsylvania, U.S.A.

Chuang Chuang Tsai

Xerox PARC

Palo Alto, California, U.S.A.

Masataka Hirose

Hiroshima UniversityHiroshima, Japan

Frederick Koch

Technische Universitat Munchen

Garching, Germany

Louis Brus

AT&T Bell Laboratories

Murray Hill, New Jersey, U.S.A.

iMjRlslMATERIALS RESEARCH SOCIETY

Pittsburgh, Pennsylvania

Contents

PREFACE xix

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xxv

PART I: THEORY OF MOLECULAR CLUSTERS,NANOCRYSTALS, AND POROUS SILICON

FIRST-PRINCIPLES CALCULATION OF THE OPTICAL PROPERTIES

OF NANOCRYSTALLINE SILICON 3

Masahiko Hirao

THEORY OF THE PHYSICAL PROPERTIES OF Si NANOCRYSTALS 13M. Lannoo, C. Delerue, G. Allan, and E. Martin

CALCULATION OF THE ELECTRONIC STRUCTURE OF SILICON

NANOCRYSTALS 25

Nicola A. Hill and K. Birgitta Whaley

ELECTRONIC PROPERTIES OF POROUS SILICON 31

M.R. Beltran, J. Taguena-Martinez, M. Cruz, and C. Wang

EFFECT OF GEOMETRICAL IRREGULARITIES ON THE BAND

GAP OF POROUS SILICON 37

B. Sapoval and S. Russ

EFFECTIVE DIELECTRIC FUNCTION OF POROUS SILICON:

THE TRANSVERSE COMPONENT 43J.E. Lugo, J.A. del Rfo, J. Taguena-Martfnez, and

J.A. Ochoa-Tapia

OPTICAL CHARACTERIZATION OF AN ARRAY OF QUANTUM WIRES 49

G. Gumbs

ELECTRONIC AND STRUCTURAL PROPERTIES OF SL,:A NOVEL SOLID OF SILICON FULLERENES 55

Susumu Saito and Atsushi Oshiyama

ELECTRONIC PROPERTIES OF SILICON - M BINARY CLUSTERS

(M = C & Na) 61A. Nakajima, K. Nakao, M. Gomei, R. Kishi, S. Iwata,and K. Kaya

A MONTE CARLO SIMULATION OF THE STILLINGER-WEBER

MODEL FOR Si-Ge ALLOYS 67Mohamed Laradji, D.P. Landau, and B. Dunweg

A TIGHT-BINDING MODEL FOR MOLECULAR DYNAMICS OF

CARBON-HYDROGEN SYSTEMS 73

G. Kopidakis, C.Z. Wang, CM. Soukoulis, and K.M. Ho

PART II: SYNTHESIS AND PROPERTIES

OF GROUP IV MOLECULAR AND SOLID STATE

CLUSTERS AND NANOCRYSTALS

LUMINESCENCE PROPERTIES OF SILICON CLUSTERS: CHAIN,LADDER AND CUBIC STRUCTURES 81

Yoshihiko Kanemitsu

Invited Paper

v

SS,__Ge_Y ALLOY NANOCLUSTER MATERIALS

CHEMICAL VAPOR DEPOSITION OF SLFL/Ge-HgMIXTURES IN ZEOLITE Y 87

Omer Dag, Alex Kuperman, and Geoffrey A. Ozin

FABRICATION OF PHOTOLUMINESCENT AMORPHOUS PILLAR

SILICON STRUCTURES 93

S. Lazarouk, S. Katsuba, N. Kazuchits, G. de Cesare,S. La Monica, G. Maiello, E. Proverbio, and A. Ferrari

CONTROL OF THE CRYSTALLITE SIZE AND DIELECTRIC TISSUE

IN nc-Si/Si02 PLASMA CVD FILMS: ORIGIN OF THE GREEN/

BLUE AND THE EFFICIENCY OF THE RED PHOTOLUMINESCENCE 99

S. Vepfek, Th. Wirschem, M. RuckschlojS, H. Tamura,and J. Oswald

A NEW METHOD FOR PREPARING Ge NANO-CRYSTALLITESEMBEDDED IN SiN MATRICES Ill

Kunji Chen, Xuexuan Qu, Xinfan Huang, Zhifeng Li,and Duan Feng

RARE-EARTH DOPED SILICON-RICH SILICA: EVIDENCE FOR

ENERGY TRANSFER BETWEEN SILICON MICROCLUSTERS AND

RARE-EARTH IONS 117

A.J. Kenyon, P.F. Trwoga, M. Federighi, and C.W. Pitt

GENERATION AND STRUCTURAL ANALYSIS OF SILICON

NANOPARTICLES 123

Ping Li and Klaus Sattler

LUMINESCENCE FROM SiO, NANOCLUSTERS 127

Paul Wickboldt, Hyeonsik M. Cheong, Dawen Pang,Joseph H. Chen, and William Paul

BLUE LIGHT EMISSION FROM GERMANIUM ULTRAFINE PARTICLES

BY THE GAS EVAPORATION TECHNIQUE 133

Shinji Nozaki, S. Sato, A. Denda, H. Ono, andH. Morisaki

Ge NANOCRYSTALS GROWN ON Si(lll) BY MOLECULAR BEAM

EPITAXY WITH AND WITHOUT CaF2 BUFFER LAYERS 139Peter W. Deelman, Thomas Thundat, and Leo J. Schowalter

FORMATION OF SUBMICRON SINGLE CRYSTAL PARTICLES ANDDOTS BY LASER ABLATION 145

Hong Wu, R.D. Vispute, and J. Narayan

POSSIBLE MECHANISMS FOR PHOTOLUMINESCENCE IN

SPARK-PROCESSED Si 151R.E. Hummel, M.H. Ludwig, and S.-S. Chang

VISIBLE PHOTOLUMINESCENCE FROM SILICON NANOCONSTRICTIONS

FORMED BY HEAVY HYDROGEN IMPLANTATION AND ANNEALING

TREATMENTS 157

L. Pavesi, D. Bisero, F. Corni, S. Frabboni, R. Tonini,and G. Ottaviani

CONTROL OF AND MECHANISMS FOR ROOM TEMPERATURE VISIBLELIGHT EMISSION FROM SILICON NANOSTRUCTURES IN SiO, FORMEDBY Si+ ION IMPLANTATION 163

T. Komoda, J.P. Kelly, A. Nejim, K.P. Homewood,P.L.F. Hemment, and B.J. Sealy

*Invited Paper

vi

COMPOUND SEMICONDUCTOR NANOCRYSTALS FORMED BY

SEQUENTIAL ION IMPLANTATION 169C.W. White, J.D. Budai, J.G. Zhu, S.P. Withrow, R.A. Zuhr,Y. Chen, D.M. Hembree, Jr., R.H. Magruder, and D.O. Henderson

SEMICONDUCTOR NANOCRYSTALS FORMED IN Si02 BY ION

IMPLANTATION 175Jane G. Zhu, C.W. White, J.D. Budai, S.P. Withrow,and Y. Chen

CORRELATION OF SIZE AND PHOTOLUMINESCENCE FOR Ge

NANOCRYSTALS IN SiO, MATRICES 181

CM. Yang, K.V. Shcheglov, M.L. Brongersma, A. Polman,and H.A. Atwater

CORRELATION BETWEEN QUANTUM NANOCRYSTAL PARTICLESIZE AND PHOTOLUMINESCENCE USING RAMAN SCATTERING 187

E.W. Forsythe, E.A. Whittaker, F.H. Pollak, B.S. Sywe, G.S. Tompa,B.A. Khan, J. Khurgin, H.W.H. Lee, F. Adar, and H. Schaffer

INFLUENCE OF THE DISPERSION OF THE SIZE OF THE SiNANOCRYSTALS ON THEIR EMISSION SPECTRA 193

J.B. Khurgin, E.W. Forsythe, S.I. Kim, B.S. Sywe,B.A. Khan, and G.S. Tompa

LATTICE. RELAXATION EFFECTS IN Si AND GaAs NANOCRYSTALS 199X.S. Zhao, Y.R. Ge, J. Schroeder, and P.D. Persans

NONLINEAR OPTICAL PROPERTIES OF SILICON NANOCRYSTALLITES:EFFECTS OF PASSIVATION 205

A.A. Seraphin, F.J. Aranda, E. Werwa, D.V.G.L.N. Rao,and K.D. Kolenbrander

PART III: SYNTHESIS AND PROPERTIES OFII-VI, AND METAL SULFIDE, HALIDE, AND

OXIDE NANOCRYSTALS

*NANOCRYSTALS OF II-VI SEMICONDUCTOR MATERIALS 213Horst Weller, Tobias Vossmeyer, Alexander Eychmuller,Alf Mews, Lynne Katsikas, and Gunter Reck

SYNTHESIS, STRUCTURAL CHARACTERIZATION, AND OPTICAL

SPECTROSCOPY OF CLOSE PACKED CdSe NANOCRYSTALLITES 219C.R. Kagan, C.B. Murray, and M.G. Bawendi

X-RAY ABSORPTION SPECTROSCOPY AND OPTICAL ABSORPTIONSTUDIES OF THE GROWTH OF CdS NANOCRYSTALS IN GLASS 225

P.D. Persans, L.B. Lurio, J. Pant, R.J. Olsson, H. Yukselici,and T.M. Hayes

RAMAN, ABSORPTION, AND PHOTOLUMINESCENCE STUDIESOF A CdS Se,_x SEMICONDUCTOR DOPED COLOR GLASS 229

S.H. Morgan, Z. Pan, R. Mu, and B.H. Long

RESONANT RAMAN SCATTERING IN CdSxSe._x NANOCRYSTALS:ELECTRON-PHONON COUPLING 235

M. Silvestri, L.W. Hwang, P. Persans, and J. Schroeder

TRAP STATES IN Cd(S,Se) NANOCRYSTALS PROBED BY

PHOTOMODULATION SPECTROSCOPY 241Kevin L. Stokes and Peter D. Persans

*Invited Paper

vii

TRANSPARENT SOL-GEL MATRICES DOPED WITH

QUANTUM SIZED PbS PARTICLES 247

T. Gacoin, J.P. Boilot, M. Gandais, C. Ricolleau, and

M. Chamarro

SYNTHESIS OF PbS SEMICONDUCTOR MICROCRYSTALLITES

IN SITU IN REVERSE MICELLES 253

O. de Sanctis, K. Kadono, H. Tanaka, and T. Sakaguchi

MORPHOLOGY-DEPENDENT SPECTROELECTROCHEMICALBEHAVIOR

OF PbS NANOPARTICULATE FILMS GROWN UNDER SURFACTANT

MONOLAYERS 259

Yongchi Tian, Changjun Wu, Nicholas Kotov, and

Janos H. Fendler

OPTICAL PROPERTIES OF LEAD SULFIDE NANOCLUSTERS: EFFECTS

OF SIZE, STOICHIOMETRY AND SURFACE ALLOYING 265

D.E. Bliss, J.P. Wilcoxon, P.P. Newcomer, and G.A. Samara

QUANTUM CONFINEMENT IN COATED SEMICONDUCTOR

NANO-PARTICLES 271

H.S. Zhou, H. Sasahara, I. Honma, H. Komiyama,H. Sasabe, and J.W. Haus

OPTICAL FEATURES OF NANOSIZE IRON AND MOLYBDENUM

SULFIDE CLUSTERS 277

J.P. Wilcoxon, G. Samara, and P. Newcomer

SOME NATURAL THREE- AND LOWER-DIMENSIONAL

SEMICONDUCTOR SYSTEMS WITH METAL-HALIDE UNITS 283

George C. Papavassiliou, LB. Koutselas, A. Terzis,and C.P. Raptopoulou

"LUMINESCENCE AND RESONANCE RAMAN SPECTROSCOPY OF

INDIRECT EXCITONS IN AgBr NANOCRYSTALS 289S. Pawlik, H. Stolz, and W. von der Osten

QUANTUM CONFINEMENT EFFECTS ON 100-400 A DIAMETER

SILVER BROMIDE MICROCRYSTALS 301

Michal liana Freedhoff, George McLendon, and Alfred Marchetti

CONTROLLED RECRYSTALLIZATION OF HEMATITE FROM

TWO HIGHLY DIFFERENT PHASES OF FERRIC TRIHYDROXIDE 307

Georges Denes, P. Kabro, and M.C. Madamba

PART IV: SYNTHESIS, SURFACE EFFECTS,AND PROCESS/PROPERTY CORRELATIONS

FOR POROUS SILICON

EXTENDED QUANTUM MODEL FOR POROUS SILICON

FORMATION 315

H. Munder, St. Frohnhoff, M.G. Berger, M. Marso,M. Thonissen, R. Arens-Fischer, and H. Liith

NON-DESTRUCTIVE CHARACTERIZATION OF POROUS SILICON

USING X-RAY REFLECTIVITY 321

E. Chason, T.R. Guilinger, M.J. Kelly, T.J. Headley,and A.J. Howard

*Invited Paper

viii

FORMATION AND PROPERTIES OF POROUS Si SUPERLATTICES 327M.G. Berger, R. Arens-Fischer, St. Frohnhoff, C. Dieker,K. Winz, H. Miinder, H. Liith, M. Arntzen, and W. Theiss

PREPARATION, PROPERTIES AND APPLICATIONS OF FREE-STANDINGPOROUS SILICON FILMS 333

J. von Behren, L. Tsybeskov, and P.M. Fauchet

THE FORMATION OF POROUS SILICON LAYERS FORMED IN A

NON-AQUEOUS ELECTROLYTE 339Melissa M. Rieger and Paul A. Kohl

COMBINED OPTICAL, SURFACE AND NUCLEAR MICROSCOPICASSESSMENT OF POROUS SILICON FORMED IN HF-ACETONITRILE 345

Z.C. Feng, Z. Chen, K.R. Padmanabhan, K. Li, A.T.S. Wee,J. Lin, K.L. Tan, K.T. Yue, A. Bhat, and A. Rohatgi

THE EFFECT OF STARTING SILICON CRYSTAL STRUCTURE ON

PHOTOLUMINESCENCE INTENSITY OF POROUS SILICON 351W.B. Dubbelday, S.D. Russell, and K.L. Kavanagh

PECULIARITY OF POROUS SILICON FORMED IN THE

TRANSITION REGIME 357S. Lazarouk, V. Chumash, E. Fazio, S. La Monica,G. Maiello, and E. Proverbio

COMPARISON OF POROUS SILICON ETCHED GENTLY AND

UNDER ILLUMINATION 363Adam A. Filios and Raphael Tsu

EFFECT OF RAPID THERMAL OXIDATION ON BLUE AND RED

LUMINESCENCE BANDS OF POROUS SILICON 369S. Sen, A.J. Kontkiewicz, A.M. Kontkiewicz, G. Nowak,J. Siejka, P. Sakthivel, K. Ahmed, P. Mukherjee,S. Witanachchi, A.M. Hoff, and J. Lagowski

Er-IMPLANTED POROUS SILICON: A NOVEL MATERIAL FOR

Si-BASED INFRARED LEDs 375

Fereydoon Namavar, F. Lu, C.H. Perry, A. Cremins,N.M. Kalkhoran, J.T. Daly, and R.A. Soref

POST-ANODIZATION IMPLANTATION AND CVD TECHNIQUESFOR PASSIVATION OF POROUS SILICON 381

S.P. Duttagupta, L. Tsybeskov, P.M. Fauchet,E. Ettedgui, and Y. Gao

CHEMICAL MODIFICATION OF THE POROUS SILICON SURFACE 387Eric J. Lee, James S. Ha, and Michael J. Sailor

INVESTIGATION OF CHEMICAL ADSORBATE EFFECTS ON BLUEAND RED EMITTING POROUS SILICON SAMPLES 393

Julie M. Rehm, George L. McLendon, Leonid Tsybeskov,and Philippe M. Fauchet

FTIR STUDIES OF CH3OH ON POROUS SILICON 399John A. Glass, Jr., Edward A. Wovchko, and John T. Yates, Jr.

ix

PART V: STRUCTURAL, OPTICAL, ANDTHERMAL PROPERTIES OF POROUS SILICON

*SIZE, SHAPE, AND CRYSTALLINITY OF LUMINESCENT STRUCTURESIN OXIDIZED Si NANOCLUSTERS AND H-PASSIVATED POROUS Si 407

S. Schuppler, S.L. Friedman, M.A. Marcus, D.L. Adler,Y.-H. Xie, F.M. Ross, T.D. Harris, W.L. Brown, YJ. Chabal,P.J. Szajowski, E.E. Chaban, L.E. Brus, and P.H. Citrin

RECIPROCAL SPACE ANALYSIS OF THE MICROSTRUCTURE OFLUMINESCENT AND NONLUMINESCENT POROUS SILICON FILMS 417

S.R. Lee, J.C. Barbour, J.W. Medernach, J.O. Stevenson,and J.S. Custer

DIMENSIONS OF LUMINESCENT POROUS SILICON BY THERMAL

EFFUSION OF HYDROGEN 423A. Nikolov, V. Petrova-Koch, G. Polisski, and F. Koch

CONTRIBUTION OF THE NANOCRYSTALLITES AND THEIR INTERFACES

TO THE OPTICAL RESPONSE OF POROUS SILICON LAYERS 429U. Rossow, U. Frotscher, W. Richter, H. Muender,M. Thoennissen, and M. Berger

PROBING OPTICAL TRANSITIONS IN POROUS SILICON BY

REFLECTANCE SPECTROSCOPY IN THE NEAR INFRARED, VISIBLEAND UV 435

W. Thei/3, R. Arens-Fischer, M. Arntzen, M.G. Berger,S. Frohnhoff, S. Hilbrich, and M. Wernke

COMPARISON OF THE BAND GAP OF POROUS SILICON AS MEASURED

BY PHOTOELECTRON SPECTROSCOPY AND PHOTOLUMINESCENCE 441

T. van Buuren, S. Eisebitt, S. Patitsas, S. Ritchie,T. Tiedje, J.F. Young, and Yuan Gao

PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OFPOROUS SILICON 447

A. Kux and M. Ben Chorin

*ELECTRON SPIN RESONANCE INVESTIGATIONS ON POROUS SILICON 453

B.K. Meyer, D.M. Hofmann, P. Christmann, W. Stadler,A. Nikolov, A. Scharmann, and A. Hofstaetter

*THE SPECTROSCOPY OF POROUS SILICON 465

P.D.J. Calcott, K.J. Nash, L.T. Canham, and M.J. Kane

LOCALIZED NATURE OF PHOTOLUMINESCENCE FROM ANODICALLYOXIDIZED POROUS SILICON 477

T. Ito, K. Furuta, T. Yoneda, O. Arakaki, A. Hatta, and A. Hiraki

THE VISIBLE AND THE INFRARED LUMINESCENCE BANDS AS

A TOOL FOR CHARACTERIZATION OF THE POROUS SILICON

BANDSTRUCTURE 483V. Petrova-Koch, T. Muschik, G. Polisski, and D. Kovalev

ORIGIN OF THE INFRARED BAND FROM POROUS SILICON 489

G. Mauckner, J. Hamann, W. Rebitzer, T. Baier,K. Thonke, and R. Sauer

LIGHT CONTROLLED PHOTOLUMINESCENCE RELAXATION INPOROUS SILICON 495

R. Czaputa, R. Fritzl, and A. Popitsch

*Invited Paper

x

QUENCHING AND RECOVERY OF THE PHOTOLUMINESCENCEIN POROUS Si AFTER PULSE IR IRRADIATION 501

J. Diener, S. Ganichev, M. Ben-Chorin, D. Kovalev,V. Petrova-Koch, and F. Koch

*PHOTOLUMINESCENCE QUENCHING OF POROUS SILICON 507Diana L. Fisher, Aurilee Gamboa, Jessica Harper,Jeffrey M. Lauerhaas, and Michael J. Sailor

LOCALIZED STATES AND POROUS SILICON LUMINESCENCE 519

V.M. Dubin, F. Ozanam, and J.-N. Chazalviel

CARRIER DYNAMICS IN POROUS SILICON: FROM THE

FEMTOSECOND TO THE SECOND 525

Philippe M. Fauchet

EXCITATION TIME DEPENDENCE OF LUMINESCENCE DECAYIN THERMALLY OXIDIZED POROUS Si 537

K. Shiba, S. Miyazaki, and M. Hirose

SIMULTANEOUS DETECTION OF RADIATIVE AND NON-RADIATIVERECOMBINATION IN POROUS SILICON 543

Vytautas Grivickas and Jan Linnros

EXPERIMENTS AND MONTE CARLO SIMULATIONS ON THE

RECOMBINATION DYNAMICS IN POROUS SILICON 549L. Pavesi and H. Eduardo Roman

TEMPERATURE DEPENDENCE OF STRESSES AND H DESORPTIONIN POROUS SILICON 555

Y. Diawara, J.F. Currie, A. Yelon, V. Petrova-Koch,and A. Nikolov

THE THERMAL CONDUCTIVITY OF POROUS SILICON 561W. Lang, A. Drost, P. Steiner, and H. Sandmaier

PART VI: ELECTRONIC AND ELECTROCHEMICAL

PROPERTIES AND APPLICATIONS OF

NANOCRYSTALS AND POROUS SILICON

MODELLING THE MULTIPLICITY OF CONDUCTANCE STRUCTURESIN CLUSTERS OF SILICON QUANTUM DOTS 569

D.W. Boeringer and R. Tsu

ELECTRICAL TRANSPORT IN MESOPOROUS SILICON LAYERS 575M. Ben-Chorin, S. Grebner, F. Wang, R. Schwarz,A. Nikolov, and F. Koch

INVESTIGATION OF ELECTRONIC PROPERTIES OF

POROUS SILICON BY THE PULSED SURFACE

PHOTOVOLTAGE TECHNIQUE 581Th. Dittrich and H. Flietner

PHOTOVOLTAIC CHARACTERIZATION OF TRAPPING

IN POROUS SILICON 587D.W. Boeringer and R. Tsu

INVESTIGATION OF EFFICIENCY IMPROVEMENT ONSILICON SOLAR CELLS DUE TO POROUS LAYERS 593

Gregory Sun, Yuxin Li, Yicheng Lu, Babar Khan,and Gary S. Tompa

*Invited Paper

xi

GAS SENSOR USING AN ALUMINIUM-POROUS SILICON JUNCTIONAPPLICATION TO THE DETECTION OF NON-ZERO MOLECULAR

DIPOLE MOMENT 599

D. Stievenard and D. Deresmes

POROUS SILICON USED AS AN INITIATOR IN

POLYMERIZATION REACTIONS 605

Julie L. Heinrich, Alice Lee, and Michael J. Sailor

SPECTRAL RESPONSE OF PHOTOELECTROCHEMICAL CELLS

BASED ON NANOCRYSTALLINE SEMICONDUCTOR FILMS 611

M.C. Rossi, R. Vincenzoni, and F. Galluzzi

PART VII: ELECTROLUMINESCENT APPLICATIONS

OF NANOCRYSTALS AND POROUS SILICON

*ON THE ORIGIN OF THE ELECTRICALLY-INDUCED SPECTRALSHIFT OF POROUS SILICON PHOTO- AND ELECTRO- LUMINESCENCE 619

A. Bsiesy, M.A. Hory, F. Gaspard, R. Herino, M. Ligeon,F. Muller, R. Romestain, and J.C. Vial

POROUS SILICON AS AN ULTRAVIOLET LIGHT SOURCE 629

F. Kozlowski, B. Huber, P. Steiner, H. Sandmaier,and W. Lang

BLUE AND GREEN ELECTROLUMINESCENCE FROM

POROUS MATERIALS 635

H. Mimura, T. Matsumoto, and Y. Kanemitsu

NEAR-INFRARED EMISSION FROM A POROUS SILICON DEVICE 641

J. Penczek, A. Knoesen, H.W.H. Lee, and R.L. Smith

MICRON-SIZE AND SUBMICRON-SIZE LIGHT-EMITTING POROUS

SILICON STRUCTURES 647S.P. Duttagupta, P.M. Fauchet, C. Peng, S.K. Kurinec,K. Hirschman, and T.N. Blanton

LIGHT EMISSION VERSUS EXCITATION FROM POROUS

STRUCTURES IN ION-IMPLANTED SILICON 653E. Vazsonyi, I. Barsony, T. Lohner, M. Fried,J. Erostyak, M. Racz, and F. Paszti

VISIBLE ELECTROLUMINESCENCE FROM Al-POROUS SILICON

REVERSE BIAS DIODES FORMED ON THE BASE OF DEGENERATEN-TYPE SILICON 659

S. Lazarouk, V. Bondarenko, P. Pershukevich,S. La Monica, G. Maiello, and A. Ferrari

DEPOSITING METALS INTO POROUS SILICON-THE

IMPACT ON LUMINESCENCE 665

P. Steiner, F. Kozlowski, and W. Lang

THE INFLUENCE OF LOCAL AMBIENT ATMOSPHERE ON THE

ELECTROLUMINESCENT STABILITY OF POROUS SILICON DIODES 671

Libing Zhang, Jeffery L. Coffer, Bruce E. Gnade,DaXue Xu, and Russell F. Pinizzotto

STABILIZATION OF ELECTROLUMINESCENCE AND PHOTOLUMINESCENCEOF POROUS N-SILICON BY CHEMICAL OXIDATION IN Yli02 677

F. Kozlowski, W. Wagenseil, P. Steiner, and W. Lang

*Invited Paper

xii

PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN PARTIALLY

OXIDIZED POROUS SILICON 683

L. Tsybeskov, S.P. Duttagupta, and P.M. Fauchet

CARRIER TRANSPORT IN POROUS SILICON LIGHT-EMITTING

DIODES 689

C. Peng, P.M. Fauchet, K.D. Hirschman, and S.K. Kurinec

OPTOELECTRONIC EFFECTS IN POROUS SILICON RELATED TO

THE VISIBLE LUMINESCENCE MECHANISM 695

N. Koshida, H. Koyama, T. Ozaki, M. Araki, T. Oguro,and H. Mizuno

UV-VISIBLE-IR ELECTROLUMINESCENCE FROM Si AND Ge

NANOCRYSTALS IN A WIDER BANDGAP MATRIX 701

G.S. Tompa, D.C. Morton, B.S. Sywe, Y. Lu, E.W. Forsythe,J.A. Ott, D. Smith, J. Khurgin, and B.A. Khan

SIZE DEPENDENT ELECTROLUMINESCENCE FROM CdSe

NANOCRYSTALLITES (QUANTUM DOTS) 707

B.O. Dabbousi, O. Onitsuka, M.F. Rubner, and M.G. Bawendi

ELECTROLUMINESCENCE OF Yb-DOPED InP 713

A.K. Alshawa, H.J. Lozykowski, and I. Brown

PART VIII: NANOCRYSTALLINE AND

MICROCRYSTALLINE FILMS AND THEIR APPLICATIONS

PREPARATION OF NANOCRYSTALLINE SILICON BY PULSED

PLASMA PROCESSING 721

S. Oda and M. Otobe

MICROCRYSTALLINE SILICON THIN FILM GROWTH AND

SIMULTANEOUS ETCHING OF AMORPHOUS MATERIAL 733

M. Heintze, R. Zedlitz, and W. Westlake

GRAIN GROWTH IN DISPERSIONS OF ^ic-Si IN a-Si:H 739

M. Taguchi and S. Wagner

LARGE GRAIN SIZE AND HIGH DEPOSITION RATE FOR

MICROCRYSTALLINE SILICON PREPARED BY VHF-GD 745

P. Hapke, F. Finger, M. Luysberg, R. Carius, and

H. Wagner

STRUCTURAL AND ELECTRICAL PROPERTIES OF UNDOPED

MICROCRYSTALLINE SILICON GROWN BY 70 MHz AND

13.56 MHz PECVD 751

R. Fluckiger, J. Meier, G. Crovini, F. Demichelis,F. Giorgis, C.F. Pirri, E. Tresso, J. Pohl, V. Rigato,S. Zandolin, and F. Caccavale

SPIN RESONANCE STUDIES ON FREE ELECTRONS AND DEFECTSIN MICROCRYSTALLINE SILICON 757

C. Malten, F. Finger, P. Hapke, T. Kulessa, C. Walker,R. Carius, R. Fluckiger, and H. Wagner

PREPARATION AND OPTICAL PROPERTIES OF ULTRATHIN

SILICON FILMS 763R.W. Collins, Hien V. Nguyen, Ilsin An, Yiwei Lu,and M. Wakagi

*Invited Paper

xiii

LUMINESCENT HYDROGENATED NANOCRYSTALLINESILICON FILMS 769

Y. Wang, F. Yun, X.B. Liao, G.Q. Pan, G.L. Kong,and B. Yang

THIN FILMS OF SEMICONDUCTING SnSi ALLOYS GROWNBY PULSED LASER DEPOSITION 775

Randolph E. Treece, J.S. Horwitz, D.B. Chrisey,J. Tang, and R.S. Williams

DEPOSITION OF MICROCRYSTALLINE Si,Ge Otc-Si.Ge) ALLOYSBY REACTIVE MAGNETRON SPUTTERING 781

S.M. Cho, D. Wolfe, S.S. He, K. Christensen,D.M. Maher, and G. Lucovsky

THE STRUCTURE AND COMPOSITION OF DOPED SILICONOXYCARBIDE MICROCRYSTALLINE LAYERS PRODUCED BY

SPATIAL SEPARATION TECHNIQUES 787

R. Martins, M. Vieira, I. Ferreira, and E. Fortunato

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIESOF <p> jiC-SiC:H THIN FILMS DEPOSITED BY THE VHF-GD 793

Roger Flvickiger, J. Meier, A. Shah, J. Pohl,M. Tzolov, and R. Carius

MICROCRYSTALLINE /3-SiC GROWTH ON Si BY ECR-CVD AT 500°C 799Kuan-Lun Cheng, Chih-Chien Liu, Huang-Chung Cheng,Chiapyng Lee, and Tri-Rung Yew

POROUS SILICON: A POSSIBLE BUFFER LAYER FOR DIAMONDGROWTH ON SILICON SUBSTRATES 805

Zhaohui Liu, B.Q. Zong, and Zhangda Lin

CHARACTERIZATION OF FLAME GROWN DIAMOND FILMS BY

LUMINESCENCE AND EPR 811

L. Pereira, E. Pereira, C. Tavares, M. Neto, A. Cremades,J. Piqueras, J. Jimenez, and P. Martin

MICROCRYSTALLINE CUBIC BORON NITRIDE/AMORPHOUS

HYDROGENATED BORON NITRIDE MIXED PHASE THIN FILMS 817

Shu-Han Lin and Bernard J. Feldman

PART IX: MULTILAYERED AND

MICROSTRUCTURED FILMS

*VISIBLE LIGHT EMISSION IN SILICON-INTERFACE

ADSORBED GAS SUPERLATTICES 825

Raphael Tsu, Jonder Morais, and Amanda Bowhill

OBSERVATION OF QUANTUM SIZE DEPENDENT BLUE SHIFT

IN THE LUMINESCENCE OF RECRYSTALLIZED Si/SiN

SUPERLATTICES 833D.A. Griitzmacher, E.F. Steigmeier, H. Auderset, R. Morf,B. Delley, and R. Wessicken

TRANSMISSION ELECTRON MICROSCOPY OBSERVATION OF

CONSTRAINED CRYSTALLIZATION IN a-Si:H/a-SiNX:HMULTILAYER FILM 839

Xinfan Huang, Weihua Shi, Kunji Chen, Shidong Yu,and Duan Feng

*Invited Paper

xiv

ELECTRICAL CHARACTERISTICS OF ULTRA-THIN MULTI-LAYERS

OF POLY-Si AND SILICON DIOXIDE 845Kevin K. Chan, Young H. Lee, and Carol L. Stanis

LUMINESCENCE PROPERTIES OF SILICON OXYNITRIDE FILMS 851

T. Fischer, T. Muschik, R. Schwarz, D. Kovalev, and F. Koch

X-RAY DIFFRACTION STUDY OF CLUSTERS IN a-tC FILMS 857L.J. Martinez-Miranda, T.A. Friedmann, J.P. Sullivan,M.P. Siegal, T.W. Mercer, N.J. DiNardo, and F. Fang

SURFACE STRUCTURE OF TETRAHEDRAL-COORDINATED AMORPHOUSDIAMOND-LIKE CARBON FILMS GROWN BY PULSED LASER DEPOSITION 863

T.W. Mercer, N.J. DiNardo, L.J. Martinez-Miranda, F. Fang,T.A. Friedmann, J.P. Sullivan, and M.P. Siegal

PART X: PREPARATION, CHARACTERIZATION, AND

APPLICATIONS OF POLYCRYSTALLINE FILMS

CONTROL OF GRAIN SIZE AND TEXTURE OF POLY-Si WITH ATOMICHYDROGEN UNDER IN SITU ELLIPSOMETRIC OBSERVATION 871

K. Nakamura, T. Akasaka, D. He, and I. Shimizu

EARLY STAGE OF POLYCRYSTALLINE GROWTH OF Ge AND SiGe BYREACTIVE THERMAL CVD FROM GeF4 AND Si2H6 877

Jun-Ichi Hanna, Takayuki Ohuchi, and Masaji Yamamoto

THIN FILM POLYCRYSTALLINE Si BY CS SOLUTION GROWTH

TECHNIQUE 883

Richard L. Wallace, Wayne A. Anderson, and K.M. Jones

THE CRYSTALLINE QUALITY OF EPITAXIAL Si LAYERS SOLUTION

GROWN ON POLYCRYSTALLINE Si SUBSTRATES 889

M. Albrecht, B. Steiner, Th. Bergmann, A. Voigt, W. Dorsch,H.P. Strunk, and G. Wagner

HIGH-QUALITY POLYCRYSTALLINE SILICON THIN FILM PREPAREDBY A SOLID PHASE CRYSTALLIZATION METHOD 895

T. Baba, T. Matsuyama, T. Sawada, T. Takahama,K. Wakisaka, and S. Tsuda

GRAIN BOUNDARY LOCATION-CONTROLLED POLY-Si FILMS FORTFT DEVICES OBTAINED VIA NOVEL EXCIMER LASER PROCESS 903

H.J. Kim and James S. Im

LASER DOPING AND CRYSTALLIZATION OF AMORPHOUSSILICON THIN FILMS 909

J.B. Boyce, G.B. Anderson, P.G. Carey, D.K. Fork, R.I. Johnson,P. Mei, S.E. Ready, and P.M. Smith

Nd-YAG LASER INDUCED CRYSTALLIZATION ON a-Si:H THIN FILMS 915

J. Carvalho, I. Ferreira, B. Fernandes, J. Fidalgo, and R. Martins

EFFECT OF DEPOSITION TEMPERATURE ON THE PHOTORESPONSE OFCRYSTALLIZED HYDROGENATED AMORPHOUS SILICON FILMS 921

Nagarajan Sridhar, D.D.L. Chung, W.A. Anderson, and J. Coleman

CARRIER TRANSPORT IN POLYCRYSTALLINE AND AMORPHOUS SILICONTHIN FILM TRANSISTORS 927

T. Sameshima, M. Sekiya, M. Hara, N. Sano, and A. Kohno

XV

STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF UNDOPED

POLY-Si OXIDES 933

T. Sakamoto, H. Tokioka, S. Takanabe, T. Kubota,Y. Niwano, Y. Goto, H. Namizaki, O. Wada, and H. Kurokawa

EFFECT OF THE HETERO-INTERFACE ON THE PHOTORESPONSE

OF a-Si/c-Si SOLAR CELLS 939

B. Jagannathan, J. Yi, R. Wallace, and W.A. Anderson

DIFFUSION BEHAVIOR OF B-, As- AND Sb-DOPANTS IN

THIN EPITAXIAL LAYERS 945

W.H. Krautschneider, F. Lau, H. Gossner, and

H. Schaefer

IMPROVED SiCr RESISTOR PERFORMANCE BY MEANS OF RAPID

THERMAL PROCESSING 951Pirouz Maghsoudnia

PART XI: SINGLE CRYSTAL DOTS, WIRES,HETEROSTRUCTURES, AND SUPERLATTICES:

THEORY AND EXPERIMENT

SCALABLE FABRICATION AND OPTICAL CHARACTERIZATIONOF nm Si STRUCTURES 957

Saleem H. Zaidi, An-Shyang Chu, and S.R.J. Brueck

FORMATION OF HIGHLY-UNIFORM AND DENSELY-PACKED ARRAYS

OF GaAs DOTS BY SELECTIVE EPITAXY 969Charles S. Tsai, Robert B. Lee, and Kerry J. Vahala

DETERMINATION OF THE STRAIN STATUS OF GaAs/AlAs

QUANTUM WIRES AND QUANTUM DOTS 975

A.A. Darhuber, G. Bauer, P.D. Wang, Y.P. Song,CM. Sotomayor Torres, and M.C. Holland

PHOTOLUMINESCENCE OF A SINGLE-CRYSTAL SILICON

QUANTUM WELL 981

Peter N. Saeta and Alan C. Gallagher

CARRIER CONFINEMENT EFFECTS IN EPITAXIAL SILICONQUANTUM WELLS PREPARED BY MOCVD 987

H. Paul Maruska, R. Sudharsanan, Eric Bretschneider, Albert Davydov,J.E. Yu, Balu Pathangey, K.S. Jones, and Timothy J. Anderson

CHARACTERIZATION OF HIGH Ge CONTENT SiGe HETEROSTRUCTURES

AND GRADED ALLOY LAYERS USING SPECTROSCOPIC ELLIPSOMETRY 993

A.R. Heyd, S.A. Alterovitz, and E.T. Croke

LUMINESCENCE PROPERTIES OF PERIODIC DISORDERED

THIN LAYER GaAs/AlAs SUPERLATTICES 999

Ruth Y.A. Zhang, J. Strozier, C. Horton, and A. Ignatiev

BAND OFFSETS OF InAsJ> JInP STRAINED LAYER QUANTUMWELLS GROWN BY LP-MOVPE USING TBAs 1005

M. Beaudoin, R.A. Masut, L. Isnard, P. Desjardins, A. Bensaada,G. L'Esperance, and R. Leonelli

ELECTRONIC STATES IN Cd, ZnTe/CdTe STRAINED LAYER COUPLED

DOUBLE QUANTUM WELLS AND THEIR PHOTOLUMINESCENCE 1011

Tiesheng Li, H.J. Lozykowski, and J. Reno

*Invited Paper

xvi

PHOTOLUMINESCENCE STUDIES OF [(CdSeUZnSeVL-ZnSeTeMULTIPLE QUANTUM WELLS UNDER HIGH PRESSURE 1017

Z.P. Wang, Z.X. Liu, H.X. Han, J.Q. Zhang, G.H. Li,Z.L. Peng, and S.X. Yuan

EPITAXIAL GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE

AND SILICON 1023

K. Dovidenko, S. Oktyabrsky, J. Narayan, and

M. Razeghi

CHARACTERIZATION OF THE THIN OXIDE-NITRIDE-OXIDE (ONO)STRUCTURE USING SPECTROSCOPIC ELLIPSOMETRY 1029

Leo M. Asinovsky and Steve Zierer

USE OF QUANTUM-WELL SUPERLATTICES TO INCREASE THE

THERMOELECTRIC FIGURE OF MERIT: TRANSPORT AND

OPTICAL STUDIES 1035

L.D. Hicks, X.X. Bi, and M.S. Dresselhaus

MAGNETIC PROPERTIES OF HEISENBERG ANTIFERROMAGNETICEuTe/PbTe SUPERLATTICES 1041

J.J. Chen, G. Dresselhaus, M.S. Dresselhaus, G. Springholz,and G. Bauer

EFFECTS OF LANDAU LEVEL COUPLING ON THE MAGNETIC BANDSTRUCTURE FOR ELECTRONS IN A TWO-DIMENSIONAL HEXAGONAL

LATTICE 1047

O. Kuhn, V. Fessatidis, H.L. Cui, and N.J.M. Horing

AUTHOR INDEX 1053

SUBJECT INDEX 1059

xvii