METROLOGY FOR PROCESS CONTROL IN ... - LETI Innovation …...LETI-UnitySC collaboration LETY INNOVATION Days / ADVANCED METROLOGY & CHARACTERIZATION PLATFORM. 2019-07-02 31 4 YEARS

BY

METROLOGY FOR PROCESS CONTROL IN HETEROGENEOUS PACKAGING

[email protected]

Friday, June 28th, 2019➢ Prototyping Pilot Line Workshop

➢ ADVANCED METROLOGY & CHARACTERIZATION PLATFORM

2019-07-02 LETY INNOVATION Days / ADVANCED METROLOGY & CHARACTERIZATION PLATFORM 2

UnitySC Overview

Technology Trend

UnitySC Process Control

LETI-UnitySC collaboration

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Unitysc Overview

Technology Trend



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1983 2004 2016 2017 2018 2019

• FOGALE

nanotech

creation

• Semiconductor

Business Unit creation

• Nanotech Solution, subsidiary of Fogale,

acquires Altatech from Soitec, a company

specialized into wafer inspection technology

• Altatech becomes Unity Semiconductor SAS,

designed to carry the semiconductor business

of Fogale group

• The company is now able to deliver full process

control tools and software for advanced

semiconductor manufacturers

• Acquisition by Unity

Semiconductor SAS of

the commercial branch

of Austin (USA)

• Disposal of the activity

Deposition, lastly carried

by Unity Semiconductor

SAS to the benefit of

Kobus

• Kamel Ait Mahiout

joins as new CEO

• Acquisition of HSEB, a

company dedicated to

optical inspection, review

and metrology for

semiconductor applications

• Opening of Unity

SC’s 3rd

commercial

branch in Taïwan

• Skyverse-Unity

SC JV for China

• Opening of

UnitySC's Asian

HQ office in

Singapore


Mobile Wireless

wearables IoT

Advance Packaging MEMS SiP Sensors

Automotive

Power Devices, SiC, GaN, Sensors

HPC-Memory-Photonics

3D Memory, TSV, Photonics


2019 Revenue Growth

2019 Gross Margin

EmployeesWorldwide

Patents Grantedand Pending

R&D Team

Installed Units

Demo Centers in Europe


LIGHTiX LIGHTSee LIGHtSpeed NST

Inspection Inspection Inspection Metrology

Key capability Front, Back, Edge Advanced Materials

Wafer thinning

Non Visible defects

(slip line, crystallographic

dislocation, delamination)

Unpatterned wafer

Competitor for SP1/SP2

Opaque & transparent

Laser groove metrology,

wafer thinning, TSV, RST,

MOLD thickness, dry film

thickness, CMP control,

Overlay

Application Front End

Advanced packaging

Power Front End Front End to Advanced

Packaging

Key differentiator Speed at sub-µm sensitivity Unique capabilities with

non visible defects

Efficiency

Cost of ownership

Unique on transparent

material

Versatility

Best in class GR&R


Unitysc Overview

Technology Trend



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UnitySC Overview

Technology Trend




Metrology platform for Advanced Packaging

It combine FLEXIBILITY with STABILITY/THROUGHPUT

INDUSTRIAL DESIGN

Manufacturing fully outsourced

Single and multiple transparent layers thickness

TTV, Bow, Warp (Up to 5mm warped wafers)

PR opening, Top/Bottom CD, Trench Depth

Bump diameter/height, Cu nail reveal, Coplanarity

RDL metrology

Surface profiling, Topography, Dishing and erosion

Roughness

Mold compound metrology

In and out of the plane 3D Overlay

Nanotopography at die level

Defect imaging at embedded and bonding interface

by NIR Microscope

132019-07-02 LETY INNOVATION Days / ADVANCED METROLOGY & CHARACTERIZATION PLATFORM

Unity Confidential2019-07-02 14

Fabrication of different devices will add topography at different wavelength (transistors, mems, die and wafer)

Edge Roll off High resolution

nanotopography

LETY INNOVATION Days / ADVANCED METROLOGY & CHARACTERIZATION PLATFORM

Application Cases

2019-07-02 15LETY INNOVATION Days / ADVANCED METROLOGY & CHARACTERIZATION PLATFORM

Hybrid bonding: BSI

–Goal: Yield>90%

–Alignment Defect detection before annealing/thinning is mandatory

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Wafer to Wafer hybrid bonding using Cu & SiO2

Thinning

NST/TMAP Series


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Hybrid Bonding Application

Pre deposition

Post deposition

a b

Nanotopography

Centre die Edge die

Edge Roll Off


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GR&R test over 5 days

0 50 100 µm

µm

0

20

40

60

80

100

120

nm

0

1

2

3

4

5

6

7

8

Surface analysed

0 100 200 µm

µm

0

50

100

150

200

nm

0

1

2

3

4

5

6

7

8

9

Surface measured



Non corrected data

Correction of offset

Correction of offset et rotation Residual

Hybrid bonding overlay

Enhanced IR image by dual

side filtered illumination



Line Pitch 0.72 µm


Application Cases

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PROCESS

CONTROL

D2W

TSV RST

Cu NAILS


Wafer1 Wafer2 Wafer7 Wafer15 Mean

Depth Max 76.89µm 77.45µm 77.08µm 77.82µm 77.31µm

Depth Min 71.65µm 72.25µm 71.75µm 72.14µm 71.95µm

Range 5.23µm 5.20µm 5.31µm 5.68µm 5.34µm

R² = 0,9997

72

73

74

75

76

70 75 80

Dep

th (

µm

)

XSEM …

→ Strong radial non uniformity

Courtesy of ST Micro Electronics

In-line process control with

one of best

accuracy/precision in

industry

T-Map T-Map


10 times repeat 1 location

REPEAT

(nm) Dense Isolated

MEAN -16.1 -14.3

3-SIGMA 0.35 0.75

DENSE TARGET ISOLATED TARGET

nm

0

5

10

15

20

25

30

nm

0

5

10

15

20

White Light Full Field

Interferometry

NST NST


Nail reveal by Full-

Field Interferometry

4,5

5

5,5

6

-150 -50 50 150

RST before TSV reveal across 300mm wafer diameter

RST

carrier

RST

T-Map

NST


3D Full Field InterferometricNST

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Profile: Step height + line width

calculation

3D Full Field Interferometric

NST

NST


Dicing, Wafer Thinning


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Grinding/thinning process control: simultaneous measurement of remaining si thickness (RST) after grinding on backside of device, device thickness & glue/carrier thickness

Added value:

– accurate site location on TAG/GATE pad target thanks to pattern recognition through Si material by NIR

microscopy

– Fully automatic solution no matter customer process flow (glass carrier, taiko, dicing frame)

glass

adhesive

metal patternsilicon

Top sensor

Bottom sensorPattern recognition by NIR

microscopy through the Si from

top camera


Width & depth

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5 dies / wafer

at 22 WPH


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Trench etching process control: simultaneous measurement of depth, width & pitch of trenches in Si wafer

Added value:

–True value at device location with primary technology without need of modelling

–Sub-micron resolution

–Fully automatic solution for trenches wider than 0.6 µm

4,0

4,5

5,0

5,5

6,0

6,5

Site 1 Site 2 Site 3 Site 4 Site 5 Site 6 Site 7 Site 8 Site 9 Site 10

D E P T H

W21 W22


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UnitySC Overview

Technology Trend




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4 YEARS outstanding collaboration

EU funded collaborative projects (3D STACK, …)

Most recent Conference Papers

ASMC 2019IMAPS DCP 2018


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4 YEARS outstanding collaboration

13th International Conference on Nitride Semiconductors (2019)


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Documents

METROLOGY FOR PROCESS CONTROL IN ... - LETI Innovation …...LETI-UnitySC collaboration LETY INNOVATION Days / ADVANCED METROLOGY & CHARACTERIZATION PLATFORM. 2019-07-02 31 4 YEARS