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University of Dayton Office of Technology Partnerships 937.229.3469 Method For Preferential Growth Of Semiconducting Verticall Y Aligned Single Walled Carbon Nanotubes Case #: UD-500 US Patent Serial #: 12/511,517 Inventor: Liming Dai, et. al. Overview : Carbon nanotubes can be conceptually viewed as a grapheme sheet rulled up into a nanoscale tube form to produce the single-walled carbon nanotubes (SWNTs). There may be additional graphene tubes around the core of a SWNT to form multiwallcd carbon nanotubes (MWNTs). Depending on their diameter and helicity of the arrangement of carbon atoms in the nanotube

Method For Preferential Growth Of Semiconducting Verticall

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University of Dayton Office of Technology Partnerships

937.229.3469

Method For Preferential Growth Of Semiconducting Verticall Y Aligned Single Walled Carbon Nanotubes Case #: UD-500

US Patent Serial #: 12/511,517

Inventor: Liming Dai, et. al.

Overview: Carbon nanotubes can be conceptually viewed as a grapheme sheet rulled up into a nanoscale

tube form to produce the single-walled carbon nanotubes (SWNTs). There may be additional

graphene tubes around the core of a SWNT to form multiwallcd carbon nanotubes (MWNTs).

Depending on their diameter and helicity of the arrangement of carbon atoms in the nanotube