METDA Corporation Shijiazhuang, Hebei Province, China

METDA Corporation

Shijiazhuang, Hebei Province , China

General Briefing

Headquarter Headquarter Research Center Research Center

34.3 h34.3 h㎡㎡

General Briefing

New Development Zone New Development Zone Industrial Production Base Industrial Production Base

66.6 h66.6 h㎡㎡

METDA Overview

• METDA is the International Marketing/Sales company of HSRI. The Holding Company-Hebei Semiconductor Research Institute (HSRI) of Micro Electronic Technology Development Application Corporation (METDA Corp.) was founded in 1956 with achievements of China’s first Transistor, first Silicon IC, first GaAs IC and first Semiconductor Laser.

• METDA has been serving our customers in wireless, fiber optics, aerospace, avionics, medical and satellite communication industries with high-performance, cost competitive and high reliable products.

• METDA is structured by 9 Specialized Divisions, 7 Research Departments, 5 Pilot Production Lines, 2 Research and Development Centers, 8 High-Tech Self-invested Corporations and Joint Ventures including several star companies like Bowei and Puxing.

• Overseas sales of METDA in 2013 is USD 26 million

Application Areas

RadarSatellite CommunicationsAerospace Communication stationOptical CommunicationsPublic Security

Product Offering

• GaAs and GaN MMIC & devices

• Silicon devices

• RF& Microwave Hybrid Integrated Circuits

• Microwave& Millimeter wave components, modules and subsystems

• Optoelectronic devices and modules

• MEMS devices and modules

• Packaging Solutions

GaAs Devices and MMIC

• The GaAs and GaN Division has won more than 100 National Technology Awards

• Main categories include GaAs/GaN MMIC Power Amplifier Chip, GaAs Power FET, GaAs MMIC Low Noise Amplifier Chip and GaAs Low Noise FET. Also includes T/R module solutions.

• Products are widely served in wireless communication and radar markets. Customized products can be offered

GaAs Products Range

GaAs MMIC

• Power Amplifiers

• Digital Phase Shifters

• Digital Attenuators

• Switches

• Limiters

• Digital True time Delay

• Power divider/ combination

• Multi-Functinal Chip

• Low Noise Amplifiers

FET

• Low Noise FETs

• Power FETs

• Internally Matched FETs

(1)LNAf： 1-40GHz

(2) Power Amplifierf： 1-40GHzPout： 20-42dBm

(3)Digital Phase Shifterf： 1-40GHzRMS： 2.5°Bits： 1、 4、 5、 6、 8

(4) Digital Attenuatorf： 1-40GHz

(5) Switchf： DC-40GHzPIN and FET

(6) Limiterf： 2-6G、 6-18G； C、

XLimiting Level： 15dBmMax Power： 43dBm(CW)

GaAs Microwave& mm wave MMIC

GaAs MMIC

1.2-1.6GHz

Gain： 24dB

Noise Figure： 1.0dB

P-1 ： 4dBm

I/O VSWR： 2.0/2.0

+5V @ 20mA

2.2×1.8×0.1mm

5.0-6.0GHz

Gain： 21dB


P-1 ： -1dBm

I/O VSWR： 1.8/1.5

+5V @ 8mA

2.7×1.5×0.1mm 3.2×1.25×0.1mm

40-46GHz

Gain： 20dB


P-1 ： 0dBm

I/O VSWR： 2.0/1.6

+5V @ 6mA

Ultra Low Comsuption Low Noise Amplifier

GaAs MMIC

5-6GHz16W/24dB/38%

6-18GHz5W/17dB/18%

8-12GHz14W/20dB/40%

16-18GHz14W/16dB/25%

GaAs Power Amplifier MMIC

40-45.5GHz1W/14dB/18%

34-36GHz5W/15dB/20%

bandPout L band S Band C Band X Band Ku Band K Band Ka Band

6～18GHz

16W NC1185C-506

14W NC11139C-812 NC1176C-1618

12W NC1173C-2734NC1168C-812

NC1155C-8510NC1175C-1518

10W NC1148C-1314

8W NC1137C-5258 NC1145C-812 NC1147C-1517

6W NC11140C-1216 NC11118C-2224

5W NC1157C-2844 NC11108C-506 NC1159C-1215 NC11191C-3436 NC11120C-618

4W NC11151C-7785 NC1152C-1617 NC11112C-2022 NC11119C-2631 NC1186C-618

3W NC11132C-2127

NC11148C-1215 NC1199C-3436NC1128C-618NC1160C-618

2WNC1117C-2242

NC11131C-2127

NC1126C-812 NC11115C-1518 NC11107C-3436

1W NC1171C-1216 NC1172C-2426 NC1187C-506 NC1108C-8511 NC1189C-1318 NC11111C-1927NC1188C-3436NC1141C-3436

NC1133C-618

0.5W NC1170C-1216NC1114C-2945NC1121C-203

NC11149C-506 NC1144C-812 NC11148C-1215NC1123C-2440

NC11145C-3337

0.2W NC11129C-1319 NC1137C-2227 NC11114C-4854 NC11138C-812NC11143C-1317NC1140C-1418

NC1198C-3238 NC11141C-618

0.1W NC1104C-5258NC1102C-812NC1129C-812

NC1177C-1214 NC11147C-1230 NC1122C-1918 NC11142C-520

GaAs Power Amplifier MMIC series

1.6-1.7GHz25W/14dB/45%

2.2-2.3GHz25W/13dB/50%

5-6GHz80W/8dB/35%

7.7-8.5GHz60W/7dB/35%

8.8-10GHz35W/7.5dB/40%

14-14.5GHz18W/5dB/23%

GaAs Internally Matched Power Transistor

GaAs Internally Matched Transistors

T/R Chipset Series：

5.2-5.8GHz GaAs MMIC 2-6GHz GaAs MMIC 8.5-10.5GHz GaAs MMIC 8-12GHz GaAs MMIC 6-18GHz GaAs MMIC 15-18GHz GaAs MMIC …34-36GHz GaAs MMIC 16 categories from L to Ka Band

Every T/R Chipset contains：

Limiter

LNA

Switch

Digital Attenuator

Digital Phase Shifter

Driving Amplifier

Power Amplifier

Driver

GaAs T/R Chipset

GaN Products Range

•Capability of simulation for Epitaxial Material strucutre, device str

ucture, circuit design of GaN power devices/MMIC within 100 GHz.

•High accurate GaN device model is built matched to the processing

platform which forms the model store for GaN Active, Passive device.

•Already shifted from 3 inches to 4 inches at 2nd Quarter of 2014.

2.7-3.5GHz50W/25dB/45%

2-18GHz3W/7dB/15%

6-18GHz10W/16dB/20%

8.0-12 GHz50W/23dB/40%

16-18GHz30W/20dB/35%

34-36GHz13W/14dB/20%

GaN Power MMIC Product Series

90-96GHz0.5W/8dB/10%

0.9-2GHz100W/11dB/45%

1.14-1.24GHz65W/15dB/60%

2.7-3.5 GHz150W/12dB/45%

5-6GHz100W/8dB/40%

9-10GHz130W/7dB/36%

1.8-2.3GHz30W/13dB/60%

4.4-5GHz120W/10dB/45%

6.4-7.2GHz120W/12dB/55%

GaN Power Transistor Series Products

LNA

3mm MMIC Product

SPST Switch Balance Mixer

RF/LO frequency：86-100GHz

IF frequency：DC-4GHz

InP Processing

SPDT Switch

90-96GHz

Insertion Loss

1.8dB

VSWR 2.0:1

Isolation 30dB

Speed 5ns

90-96GHz

I/O VSWR2.0/2.5

Gain 18dB

P-1 ： 2dBm

Noise Figure 4.5dB

90-96GHz

Insertion Loss

2.5dB

VSWR 2.0:1

Isolation 25dB

Speed 5ns

Silicon devices

• The Silicon Research and Development facility of HSRI provides different ranges of Silicon Transistors and Hybrid Integrated Circuit.

• Microwave Power Transistors include Continuous-wave Transistors, Linear Power Transistors, Power Pulsed Transistors and LDMOS Power Transistors.

• The facility has also built an advanced 4″1um production line for customization offering.

• Products are widely served in Solid State Array Radars, Microwave Communications and Telemetry areas; low noise chips and low power LDMOS chips are widely served in TV receiving systems while optic-diodes are used in security systems of airports and stations.

RF& Microwave Hybrid Integrated Circuits

• The Mini-Packaged Microwave/RF circuit centre of HSRI has developed into the largest Microwave/RF circuit supplier in China.

• Main categories include Crystal Oscillator, Surface mount RF/Microwave cost-effective components and High Reliable RF/Microwave components. Customized sub-system& integrated assemblies can be offered.

• Products are widely served in communication system, such as PHS, GSM, GSM-edge, CDMA and WCDMA&WLNA system. Moreover, those high reliable components are well equipped in aerospace& avionics industries with frequency range up to 40 GHz.

Filters

Oscillators

RF/Microwave Amplifiers

VCO and Integrated PLS

RF/Microwave Mini Integrated Circuit


Frequency ranges from P band to X band, power ranges from 10W to 1500W, carrier and metal package can be selected.

Typical P band Parameter Typical X band Parameter Frequency： 100~400MHz Frequency： 8.5~10.5GHz

Insertion Loss： 0.3dB Insertion Loss： 0.7dB Isolation： 50dB Isolation： 30dB Peak Power： 1500W Peak Power： 20W(10%Duty Cycle， Pulse width 0.1ms) (40% Duty Cycle， Pulse width

6ms)

New Update: TR Power Switches


Typical FBAR Structure

FBAR： Film Bulk Acoustic Resonator

Performance Dielectric Filter SAW Filter FBAR Filter

Frequency 1MHz-10GHz 10MHz-3GHz 500MHz-10GHz

Insertion Loss 1-2dB 2.5-4dB 1-1.5dB

Rejection <40dB <45dB <50dB

Temp Figure -10～ +10ppm -35～ -95ppm -25～ -30ppm

Quality Q 300-700 200-400 >1000

Power Capacity >>1W <1W >1W

Anti-Static Good Normal Good

Dimension Large Small Minimum

Intergration No No Yes

Dielectric Filter SAW Filter FBAR Filter

FBAR Chip Filter：


1st Generation Silicon Filter VS. Traditional Cavity Filter

Vertical Hole MEMS Filter (2-50GHz)

With vertical hole of silicon cavity structure, we achieved the 2nd generation MEMS Filter by decreasing the dimension to 1/3, and increasing the rejection from 60dB to 80dB.


1st Generation Silicon Filter VS. 2nd Generation Silicon Filter

Microwave& Millimeter-wave components, modules and subsystems• The Microwave& Millimeter-wave Division has been providing high

reliable Microwave and Millimeter-wave modules and subsystems to the market since 1960s.

• The division offers Microwave and Millimeter-wave T/R Modules, Power Modules and subsystem, single/multi channel T/R subsystem, Control Circuits and Frequency Source subsystem.

• Products are widely served in Radar and Satellite market.

30mm×30mm×8mm， 15gGain： >30dB

Psat： >39dBm

Power Fluctuation： <±0.3dB

P.A.E： >25%

C band Chip T/R module

20×20×6mmFrequency： 8.6GHz-9.6GHz；Power Output： 2 W；Rx Gain： 23dB；Rx Noise Figure： 4dB；

Microwave& Millimeter-wave components, modules and subsystems

X band Chip T/R module

6-18 GHz wideband Minimized T/R module

Frequency： 6GHz~18GHz Tx Power Output： 4WRx Gain： 23dBRx Noise Figure： 5dB

80mm×50mm×7.4mm

34-36GHz 8 Channels T/R Module

40mm×35mm×4.3mmTx Power Output： 26dBm

Rx Gain： 16dB

Rx Noise Figure： 4.2dB


功分

移相 SP3T 负载0.5*0.4

驱放功放

数控衰减 LNA 限幅

环形器天线

发射/接收

移相 SP3T 负载0.5*0.4

驱放功放

数控衰减 LNA 限幅

环形器天线

AMP

AMP

波控电路（串并转换和逻辑控制）

电源

Frequency： 8～ 12GHz；Psat：≥ 10W (CW) ；Tx Efficiency：≥ 20%；Max Input Power：≥ 10W；

80×30×8mm3


X band Minimized Chip T/R module

Millimeter Wave T/R module solution

6 chips： 0.4W/ Gain 30dB(33~37GHz) 5 bits PHS ATTEN

5 chips： 0.4W(33~37GHz) 5 bits PHS ATTEN

3 chips： 0.2W/ Gain 30dB(33~37GHz) 5 bits PHS ATTEN

2 chips： 24dBm/ Gain 15dB(19~23GHz) 6 Bits PHS

2 chips： 24dBm(19~23GHz)


Optoelectronic devices and modules• The research and development center of Optoelectronic division engages in

the opto-semiconductor technologies and the commercialization of solid state lighting solutions, across both visible and non-visible spectrums.

• Core products include High Power Semiconductor Laser Arrays, Pulse Laser Arrays, High Power LED and AlGaAs/GaAs Quantum Well Infrared Photodetector ( QWIP ).

• Products have been widely served in fiber optics, navigation, telemetry, avionics, guidance, identification and lighting industries.

MEMS devices and modules

• The MEMS division is one of the earliest and largest MEMS Industrial Research Centers in China.

• Products include Micro Inertial Devices, Microsensors, RF MEMS Devices and Opto-MEMS Devices

• Products are applicable in satellite, aircraft, attitude control of carborne and radar antenna, navigation and guidance markets.

MSG Series Gyroscope

MSA Series Accelerometer

MPA Series Accelerometer

MVS Series Vibration Sensor

MFS Series Air Flow Sensor

SiMF Series MEMS Filter

MOA Series Optical Attenuator

MGM Series Gas Meter

……

MEMS Accelerometer

MEMS Filter

MEMS Gyroscope

Air Flow Sensor


MEMS Accelerators

MEMS Accelerator High g Accelerator Sensor


MEMS Opto Variable Attenuator ChipMEMS Opto Switch Chip

1×50 MEMS Wave length Selected Switch (WSS) Chip

MEMS Optical Switch and Optical Attenuator


Packaging Solutions

• The Packaging Division has been providing components and custom integrated packaging solutions for more than 40 years. It is awarded as ‘National Industrial Experimental Base of High-Density Packaging for Large Scale Integrated Circuit’.

• The division has developed Microwave devices packages, High-Density packages, Micro packages, Optoelectronic devices packages and MEMS packages. A Multilayer Ceramic Package Development & Production Line has been built, and equipped with fully automatic Multilayer Ceramic Package production facility and advanced electronic packaging design system.

Integrated Circuit Package

MCM Plate

HIC Package

Microwave Low Noise Pacakge

Microwave MMIC Package

Optical Package

MEMS Package

AlN Products

Microwave Power Devices Pacakge

CBGA、 CPGA、 CQFP、 CSOP、 DIP...

LTCC, HTCC

LED Package

LTCC Package

Microwave Package

Packaging Solutions

Packaging Solutions

Microwave and Optical-electronic Packages

Packaging Solutions Main Manufacture Process of Optoelectronic Package

METDA Global Partners

Thank you

[email protected]

Documents

METDA Corporation Shijiazhuang, Hebei Province, China