Metal Materials for Semiconductor Processing – CVD/ALD/PVD ...€¦ · 5/10/2018 · Market Assessment/Analysis There is risk in the material supply-chain and changes in price

Metal Materials for Semiconductor Processing – CVD/ALD/PVD/ECD/ELP

CMC 2018April 26, 2018

By Jonas Sundqvist, Ph.D., Sr. [email protected]

+1-480-382-8336

AgendaIntroduction

IP Dielectric and High K

ALD

Plating

PVD

Emerging Devices

Material Issues

Summary

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Introduction Materials are changing emerging and developing.

Mg, Ru, Co, Cu, Ta, Ti, Al and WProcess are evolving in the PVD, CVD, ALD, and ELD equipment. Legacy is important in terms of Wafers, above 180nm Nodes, IoT, MEMS, and Automobiles and double digit growths are evident.

The chemistry have become more complex and specific to the OEM and Process requirements.



Dielectric & High-k Materials IP



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High-k Material IP (Applications)

Al2O3 TiO2 HfO2 ZrO2 REO STO, BST etc. Ta2O5 Total

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Dielectric & High-k Process IP (Applications)

CVD PECVD ALD SOD PVD Total Dielectric Deposition

Al2O3

TiO2

HfO2ZrO2REO

STO, BST, PZT

Ta2O5

ALD

PECVDCVD

SODPVD

Ta2O5, SrTiOx, BaSrTiOx and PZT 15 to 20 years agoToday most IP concernsing the metaloxides of : Al, Hf, Ti, Zr and RE(SiO2 based dielectrics not Include)

ALD and PECVD are domianting filed IP in deposition of dielectrics and high-k dielectrics



Platting Materials



Courtesy: LAMRC

Copper Platting Overview



Techcet made a Conservative Projections of Apple I-Phone Impact

Copper Platting Market Grow rates by volume are as follows:

Copper plating and additive materials for Damascene: ~11% per year, 5-yr. CAGR Copper plating and additive materials for WLP: 19% per year 5-yr. CAGRE-less nickel: 19% per year 5-yr. CAGR

Suppliers of Damascene and WLP copper plating materials overlap. The few suppliers that cater to both applications include: Dow Chemical and McDermid.

Shares of suppliers are expected to change more dramatically in the coming 5 years given growth in competency and size of companies in China, Taiwan and Korea.



Sputtering Target market share 2000 2017

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Honeywell 20% Grikin, 2%

KFMI, 5%

JX Nippon, 55%

Praxair, 8%

Tosoh, 10%

Projections on Market Share have changed and with China impact are changing again

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Market Assessment/Analysis There is risk in the material supply-chain and changes in price expected during the forecast period.

o Copper availability could run short starting 2020. Effect on Targets is expected to be minimal.

o Market penetration by Chinese target suppliers and possible new entrants will force price pressures on targets. Impact is already being seen in Al and will continue with Ti, and Cu.

o This is a critical focus for targets materials proceeding forward. Several Suppliers have increased market share at the expense of established suppliers.

o Mine closure have been evident in line with attempts to manage supply/demand prices and the profitable price factors of specific mines

Multi-Element Targets due to MRAM, Ovonic Memory penetration due to storage class memory and automobile markets have increased, importance of companies like Materion. Overall Cobalt usage in the ALD, CVD, and ELD area in parallel with PVD for MRAM has increased and requires further market evaluation. Legacy targets are increasing at a 11%CAGR due to 200mmwafers and the IoT, MEMS, and Automobile market

Geopolitical concerns, economics and uncertain supplies are raising the anxiety level about availability across multiple supply chains. Cobalt, Tantalum and Tungsten are being monitored. Prices have demonstrated a upward trend, especially for cobalt.

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MTJ (REF: AMAT)



a),b) ,c) –details and cross section MTJ –AMAT

• Microcontroller (MCU) is comprised of SRAM and flash as the) • To achieve this requires using up to 10 additional mask

layers• further complication are when the logic part migrates to

a high-k metal gate (HKMG) scheme at the <28nm nodes, due to thermal budget

• Integrating spin-torque-transfer MRAM (STT MRAM) in the back-end of line (BEOL) requires only three additional masks

• STT MRAM: fast speed, non-volatility, low power and integration at low temperatures

• In addition to MCUs, STT MRAM is also being developed for replacing SRAM as last-level cache memory for <10nm nodes, due to higher densities.

Growth in MgO and CoFeB Sputtering targets evident in pilot production.

X-Point MemoryMaterial Rich Environment(Process Projection)

lower of the two cross-point):1. PVD of TiN + buffer + OTS-trilayer +

Memory-trilayer + buffer + TiN,2. CoWP electroless cap of low-k,3. ALD/CVD of dielectric fill,upper level:

1. PVD of TiN + buffer + OTS-trilayer + Memory-trilayer + buffer,

2. ALD/CVD of buffer + barrier + low-k-fill,3. ALD/CVD of low-k fill (no etch-back, no

CoWP-cap)4. PVD of barrier + TiN.


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Future




Twenty years of Cu BEOL and its future Aspects Published in the 2017 IEDM Papers by Edelstein of IBM. For internal distribution of CMC only.

14


Cobalt Market



Lithium Ion Batteries ,

62%Super Alloys, 16%

Hard Metals, 6%

CeramicsPigments, 6%

Other ,10%

2020 Demand 120KTonnes/Y

Lithium Ion Batteries ,

51%

Super Alloys, 20%

Hard Metals, 8%

CeramicsPigments, 8%

Other 13%

2016 DEMAND 94KTonnes/Y

By 2020 by Acquisition China may control 95% of Cobalt

Ref: Cobalt Institute, Infomines, Global Energy, Economist

Cobalt Integration



GF and Intel show Cobalt integration at M2-M4 and M0-M1 at IEDM 2017

ALD, CVD, PVD and ELD evident on different devices

IP for Cobalt Chemical Compunds



11%

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IP Applications for Cobalt chemical compunds 2011 to 2018

Increased filing activity for Cobalt chemical compounds starting 2012Applications focusing on Li-batteries & Electronic applications (Plating chemicals, Precursors)

2012


Cobalt Cobalt in electroplating appears to be entering at the M0-M1 levels and as ALD/CVD in M2-M4 levels. Targets in terms of MRAM and CoFeB are evident and in Pilot Foundry production at GF. Analysis of Cobalt needs to consider all of process sectors.

On the demand side, strong demand for cobalt in lithium ion batteries is continuing and growth is seen in applications such as high performance alloys, tool materials, and catalysts.

Prices for Cobalt cathodes have increased by 60% in 2017 but appear to be stabilized but volatile. 3C and NEV are the driving force of cobalt consumption .

On a conflict material base both Intel and Apple have restrictions on use from the DRC. DRC accounts for 60% of the cobalt supply at this time.

Heavy investment by Chinese's Firms evident in the DRC. China is heavily dependent on the DRC for this mineral.

Pricing for cobalt as risen form $15 to $35 per ton and appears to be still increasingThe Cobalt news sources are active and are followed on a weekly basis. Predictions in 2018 are for it to moderate and reduce to $28 per ton and some news sources predict 2019 prices to fall to $17 per ton.

Ruthenium is still be evaluation due to its good electro migration properties and is under evaluation for 5nm Node Excellent results evident on Ru nanowires in research papers.

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Summary

Material Market is evolving in terms of metals used in PVD, CVD, ALD and ELD as required by emerging devices and the new segmentation of devices and applicatons.

Hidden in the details of the volumes of wafer starts is the growth in the legacy markets. Al and Ti

Heterogenous integration from both a package level and embedded device level is changing the process flows and material complexity.



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Metal Materials for Semiconductor Processing – CVD/ALD/PVD ...€¦ · 5/10/2018 · Market Assessment/Analysis There is risk in the material supply-chain and changes in price