MEMS FOR HIGH POWER APPLICATIONS

Bruce C Kim and Rahim Kasim

Plan-view of the MEMS switch (The dimensions are approximately 300 x 1000 µm2)

Isometric-view of the MEMS switch.

Fig. Top diagram depicts the switch in the open position; the gap between the gold contact and conduction path is approximately 1 µm. Bottom diagram depicts the switch in the closed position

Fabrication (Metallization of 2X2 array)

Fabrication

Anchors

contact

Fabrication

1000 μm

100 μm

100 μm

Gap = 1.5 μm Anchor = 4.2 μm

110 μm

20 μm

Fabrication Gap = 1.5 μm Anchor = 4.2 μm

Fabrication Anchors

Nickel Bridge

Contact

conduction

Testing

Fig. Testing of the MEMS switch

DCwith compliance

current

MEMSswtich

AMMETER

Testing

Fig. Testing of the MEMS switch

MEMSswticharray

AMMETER

permanentmagnet

programmablevoltage source

PROBE STATION

Testing – (I-V Closed)

I-V on

0

5

10

15

20

25

0 5 10 15 20 25

voltage (V)

curre

nt (m

A)

20mA compliance

10mA compliance

Testing- (I-V open) I-V (OFF)

-1.50E-10

-1.00E-10

-5.00E-11

0.00E+00

5.00E-11

1.00E-10

1.50E-10

2.00E-10

0 2 4 6 8 10 12

Voltage (V)

Cur

rent

(A

)

Conclusion

Extensive testing of 4X4 array underway (ratings and number of cycles).

Packaged array on PCB and testing.

Integration with diodes.