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November 6th 2008
Optoelectronic Group
Current Opto-Electronic Group members:
Dr. Jiangang Ma, Dr. Gang Bi, Dr. Fanghai Zhao (partial) ,
Mr. Donghui Li, Mr. Shaibal Mukherjee, Mr. Guangzhe Yu, Mr. Binbin Weng
Current Sponsor: NSF EPSCoR, DoD DEPSCoR, DoD ARO, DoD MDA, OCAST & Industry
Zhisheng Shi, Gerald Tuma Presidential Professor
Electrical and Computer Engineering, University of OklahomaPhone: 405-325-4292, Fax: 405-325-7066, [email protected]
http://coecs.ou.edu/ece/shi/
Impact Of NSF EPSCoR And State Match To Research In My Group
•Collaborations among the center members, e.g. my group with Drs. Johnson’s and Dr. Mao’s group
• Research Interaction among faculty members and studentse.g. with Drs. Santos, Murphy , McCann, and Yang,
• Share of the Center equipment
•Support of a research associate (Dr. Frank Zhao)
Optoelectronic Group
Research Activities: (I) IV-VI semiconductor Micro-structures
Optoelectronic Group
Research Activities: (I) IV-VI semiconductor Micro-structures
EDXA of micro-cuboids<1
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Research Activities: (II) IV-VI semiconductor Nano-Structures (In Collaboration with Dr. Mao’s Group)
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>
Optoelectronic Group
Research Activities: (III) Development Of Mid-IR Diode Lasers
<111
>
Optoelectronic Group
Si2307 I-V (150x150, 20)
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
-0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5
Voltage (V)
Cur
rent
(A)
Research Activities: (IV) Development Of Mid- and Long-Wave Detector Array on Si
Custom MBE housed at the University of Oklahoma Opto-Electronics Group Laboratories
Growth of high quality Pb-salt material on Silicon
Fabrication of in-situ PbSnSe p-n junctions
Etched (p-type)
Unetched(n-type)
Etched (p-type)
Unetched(n-type)
novel p-n junction growth techniques
First successful demonstration of PbSe p-n junction !!!!
IV-VI Semiconductor Detectors: The Untapped Potential
“Optimized” Pb1-xSnxSe p-n junctions @ 77K
PbSe; λc = 7.3 µm
Pb0.94Sn0.06Se; λc = 11.4 µm
Pb0.91Sn0.09Se; λc = 15.9 µm
1. F. Zhao, S. Mukherjee, J. Ma, D. Li, S. L. Elizondo and Z. Shi, “Influence of oxygen passivation on optical properties of PbSe thin films”, Appl. Phys. Lett., 92, 211110 (2008).
2. S. Mukherjee, D. Li, D. Ray, F. Zhao, S. L. Elizondo, J. Ma and Z. Shi, “Fabrication of an electrically pumped lead-chalcogenide laser on a [110]-oriented PbSnSe substrate” IEEE Photonics Technology Letters, 20, 629 (2008)
3. S. Elizondo, F. Zhao, J. Kar, J. Ma, J. Smart, D. Li, S. Mukherjee and Z. Shi, “Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT", Journal of Electronic Materials, vol. 37, no. 9, pp. 1411-1414, 2008
4. X. J. Wang, C. Fulk, F. Zhao, D. Li, S. Mukherjee, Y. Chang, R. Sporken, R. Klie, Z. Shi, C. H. Grein, and S. Sivananthan, “Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy,” Journal of Electronic Materials, vol. 37, no. 9, pp. 1200-1204, 2008
5. S. Mukherjee, S. Jain, F. Zhao, J. P. Kar, D. Li, and Z. Shi, “Strain oriented microstructural change during the fabrication of free-standing PbSe micro-rods,” Journal of Materials Science: Materials in Electronics, vol. 19, pp. 237-240, 2008
6. S. Mukherjee, S. Jain, F. Zhao, J. P. Kar, D. Li and Z. Shi, “Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe-PbSrSe MQW structure”, J. Microelectronic Engineering, 85, 665 (2008)
7. S. Elizondo and Z. Shi, “One-dimensional analysis of N-on-p Pb1-xSnxSe compositionally graded heterojunction photodetectors”, J. Appl.Phys., 101, 114510 (2007)
8. S. Jain, S. Mukherjee, Z. P. Guan, D. Ray, F. Zhao, D. Li, and Z. Shi, "Fabrication of free-standing PbSe micro-rods", Physica E, 39, 120 (2007)
9. L. A. Elizondo, Y. Li, A. Sow, R. Kamana, H. Z. Wu, S. Mukherjee, F. Zhao, Z. Shi, and P. J. McCann “Optically Pumped Mid-Infrared Light Emitter on Silicon,” J. Appl. Phys. 101, 104504 (2007).
10. A. Majumdar, Z. P. Guan, F. Zhao, D. Li, D. Ray, S. Jain, S. Mukherjee, and Z. Shi, “Fabrication of freestanding semiconductormultiquantum-well microtubes”, Appl. Phys. Lett., 88, 171111(2006).
11. X. H. Zhang, R. E. Doezema, N. Goel, S. J. Chung, and M. B. Santos, N. Dai, F. Zhao and Z. Shi, “Photoluminescence study of InSb/AlxIn1−xSb quantum wells”, Appl. Phys. Lett., 89, 021907 (2006).
12. D.Ray, S.Bondili, S.Jain, D.Li, F.Zhao, A.Majumdar, Z.Guan, and Z.Shi “Development of a Novel Mounting Method for the Fabrication of Pb-Salt Laser Grown on [110] Oriented BaF2 Substrate” IEEE Photonics Technology Letter, 18, 373 (2006).
Publications (2006-2008) Supported Partially By EPSCoR
Optoelectronic Group
IV-VI DBR Vertical Cavity with MQW Active Region
IV-VI Light Emitters on Silicon
High IV-VI semiconductor crystalline quality in spite of 12% lattice parameter mismatch and 700% thermal expansion with Si.
Unlike GaAs-on-Si, IV-VI-on-Si structures do not exhibit degradation from repetitive thermal cycling.
IV-VI Intevac GEN II Modular MBE
Puls
ed P
L In
tens
ity (A
rb. U
nits
)
0
500
1000
1500
150 K200 K
250 K
300 KPulsed Mode PL (λp = 1.064 µm)
Cavity Mode(λ = 1.064 µm)
Wavenumber (cm-1)
1800 2000 2200 2400 2600 2800
Ref
lect
ance
%
0
20
40
60
80
100
Cavity Mode(λp = 1.064 µm)
Energy (meV)
220 240 260 280 300 320 340 360
CW
PL
Inte
nsity
(Arb
. Uni
ts)
0.0
1.0
2.0
3.0
CW Mode PL (λp = 0.911 µm)
300 K
250 K
200 K
150 K
100 K
x 2
(c)
(b)
(a)
CW and Pulsed Mode PL
Heat Sink Temperature (K)
150 175 200 225 250 275 300 325
Ener
gy (m
eV)
230
240
250
260
270
280
290
300
310
Pulsed PLCW PL
Interband AbsorptionPbSe Lz = 20.6 nm, #H017Data from APL 78, 2199 (2001)
300 K is Optimal Temperature for Maximum Light Extraction300 K is Optimal Temperature for Maximum Light Extraction
Pulsed PL PPeak = 3.3 KWPulsed PL PPeak = 3.3 KW
Reflectance300 K
Reflectance300 K
CW PLP = 460 mWCW PLP = 460 mW
W356THeatsink = 200 K
Photon Energy (meV)
225 250 275 300 325 350
Puls
ed P
L In
tens
ity (A
rb. U
nits
)
0
100
200
300
400
CO2
PPeak = 16.7 kW
PPeak = 3.3 kW
Cavity Mode
(1-1)N
(1-1)O
(2-2)N
Excellent agreement between calculated sub-
band energies and peaks in pulsed PL spectra.
Theoretical and Experimental Results
Se, SnSe, PbSe, PbTe, CaF2, BaF2,Bi2Se3, and Ag Sources
In Situ RHEED
MBE Growth of IV-VI Nanostructures on Silicon
Completely in-situ process for MBE growth of IV-VI nanostructures on Si.
CW PL emission observed for a single-layer structure.
Applications include mid-IR optoelectronic devices and thermoelectric cooling and power generation devices.
Si(110) Substrate
CaF2
PbTe
Single Layer structure
500 nm
]101[
1 µm
Template Formation
1 µm
]101[
CaF2 growth on Si(110) immediately adopts a ridge and groove
surface morphology
Self-Organized Template
1 µm]101[
200 nm
CaF2
]101[ 200 nm
]101[
PbSe Dots/Dot-Chains
CaF2
PbSe Dot-Chains200 nm 200 nm
Some preferential alignment of PbSe dot-chains
Quasi-One-Dimensional Nanostructures
First known MBE growth of quasi-one-dimensional PbSe nanostructures on technologically relevant silicon.
Publications and Conference Presentations
Refereed PublicationsL. A. Elizondo, Y. Li, A. Sow, R. Kamana, H. Z. Wu, S. Mukherjee, F. Zhao, Z. Shi, and P. J. McCann “Optically Pumped Mid-Infrared Light Emitter on Silicon,” J. Appl. Phys. 101, 104504 (2007).
T. Laubach, L. A. Elizondo, P. J. McCann, and S. Galani, “Quantum dotting the “i” of inquiry: An authentic approach to teaching nanotechnology” (submitted to The Physics Teacher 2008).
L. A. Elizondo, P. J. McCann, F. Zhao, and Z. Shi, “Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon,”IEEE LEOS 19th Annual Lasers and Electro Optics Society Meeting (IEEE Cat. No. 06CH37736C), Montreal, Canada October 29-November 2, 2006.
Oral PresentationsL. A. Elizondo, P. J. McCann, F. Zhao, Z. Shi, J. C. Keay, and M. B. Johnson, ” Growth and Characterization of PbSe Dot-Chains on Silicon”, TMS Electronic Materials Conference, Santa Barbara, CA, June 25-27, 2008.
L. A. Elizondo, P. J. McCann, F. Zhao, and Z. Shi, “Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon,”IEEE LEOS 19th Annual Lasers and Electro Optics Society Meeting, Montreal, Canada October 29-November 2, 2006.
Poster PresentationsL. A. Elizondo, P. J. McCann, S. L. Elizondo, F. Zhao, S. Mukherjee, Z. Shi, J. C. Keay, and M. B. Johnson, ”Quantum Effects in IV-VI Semiconductor Nanostructures”, University of Oklahoma Research and Performance Day, Norman, OK, March 29, 2008.
L. A. Elizondo, P. J. McCann, F. Zhao, Z. Shi, J. C. Keay, and M. B. Johnson, ”MBE Growth of IV-VI Nanowires on a Self-organized Template”, Spring Materials Research Society Meeting, San Francisco, CA, March 24 – 28, 2008.
L. A. Elizondo, P. J. McCann, S. L. Elizondo, F. Zhao, S. Mukherjee, Z. Shi, J. C. Keay, and M. B. Johnson, ”Quantum Effects in IV-VI Semiconductor Nanostructures”, Oklahoma EPSCoR, NanoFocus & NSF EPSCoR – Annual State Conference, Oklahoma City, OK, March 6 – 7, 2008.
L. A. Elizondo, P. J. McCann, S. L. Elizondo, F. Zhao, and Z. Shi, “Optical Properties of Low-Dimensional IV-VI Semiconductor Materials,” Oklahoma EPSCoR, Stillwater, OK May 17, 2007.
L. A. Elizondo, P. J. McCann, S. L. Elizondo, F. Zhao, and Z. Shi, “Optical and Theoretical Investigations of IV-VI Semiconductor Nanostructures Epitaxially Grown on Silicon,” Research and Creative Endeavors, Norman, OK April 6, 2007.
L. A. Elizondo, P. J. McCann, F. Zhao, and Z. Shi, “Optical Study of Subband Filling and Excited State Lifetimes in IV-VI Quantum Well Materials on Silicon,” Oklahoma EPSCoR, Norman, OK May 18, 2006.