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Marcus Rosales 1

Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

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Page 1: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

Marcus Rosales

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Page 2: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

RAM and CPU are separate units.

RAM is Volatile High energy

consumption

Charge leakage

Heat production

http://blogs.arm.com/smart-connected-devices/110-no-need-to-

whine-about-transistor-leakage/

http://home.fnal.gov/~carrigan/pillars/web_Moores_law.htm

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Page 3: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

Magnetic random access memory (MRAM)

http://www.intechopen.com/books/electronic-properties-of-carbon-nanotubes/carbon-nanotube-based-magnetic-tunnel-junctions-mtjs-for-spintronics-application

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Page 4: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

Giant magnetoresistance (GMR)

Magnetic tunnel junction (MTJ)

Similar: Parallel: Low Resistance Anti-parallel: High

Resistance

http://en.wikipedia.org/wiki/Tunnel_magnetoresistance 4

http://www.intechopen.com/books/electronic-properties-of-carbon-nanotubes/carbon-nanotube-based-magnetic-tunnel-junctions-mtjs-for-spintronics-application

Page 5: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

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Conservation of spin during tunneling.

Conductance product of the DOS of two FM electrodes

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Parallel Anti-Parallel

Weigang Wang

Page 6: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

Photolithography

Photo=Light

Lithos=Stone

Graphy=Writing

http://www.dileepnanotech.com/articles/Lithography.html

http://www.prweb.com/releases/2007/02/prweb505378.html

http://www.superstock.com/stock-photos-images/1566-584361 6

Page 7: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

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IrMn

Ta

Ru

Ta

RuCoFeB

Ta

Ru

CoFe

CoFe

CoFeB

MgO

OxygenPlasma

Ar + ion beamSiO2

Deposition

PlanarizationTop Electrode Deposition

R = 200nmWeigang Wang

Page 9: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

http://ixbtlabs.com/articles2/intel-65nm/

http://wallpoper.com/wallpaper/electronics-micro-366490

MTJ and spin-tronics MRAM

▪ Nonvolatile

▪ Energy Efficient

Numerous applications outside of information storage.

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Page 10: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

NSF REU members REU administration and support team Rebekah Cross, Nikita Kirnosov, Amber Hawkins,

Dr. Pitucco, and Dr. Manne Weigang Wang Graduate students: Ty Newhouse-Illige Hamid Almasi

Undergraduate students: Christian Dane Gentry

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Page 11: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

http://bent-almaghreb.blogspot.com/

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Page 12: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

Resistance of material depends on electron’s mean free path.

Ferromagnetism occurs when a certain material contains atoms whose magnetic dipoles line up. There is a Magnetization associated with

these dipoles:𝑀 = 𝜇𝑛

𝑉

An electron can have one of two possible magnetic dipoles depending on its orientation.

In general, when we have an electron with a spin aligned with the majority of spins in a ferromagnet, this electron will travel further without being scattered.https://www1.hgst.com/hdd/technolo/gmr/gmr.htm

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Page 13: Marcus Rosales - University of Arizonaphysreu/Powerpoints/2013/MarcusRosal… · Resistance of material depends on electron’s mean free path. Ferromagnetism occurs when a certain

Bio-sensor

An analytical device, used for the detection of a substance or chemical constituent that is of interest in an analytical procedure, for a biological component.

Spin Battery Quantum Computing

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